CN106058013A - Chip level LED packaging technology - Google Patents
Chip level LED packaging technology Download PDFInfo
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- CN106058013A CN106058013A CN201610622039.6A CN201610622039A CN106058013A CN 106058013 A CN106058013 A CN 106058013A CN 201610622039 A CN201610622039 A CN 201610622039A CN 106058013 A CN106058013 A CN 106058013A
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- chip
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- packaging technology
- led packaging
- scale led
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 14
- 239000000741 silica gel Substances 0.000 claims abstract description 14
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 11
- 229920002799 BoPET Polymers 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000002096 quantum dot Substances 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000007731 hot pressing Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 239000011324 bead Substances 0.000 claims description 9
- 150000004645 aluminates Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000011265 semifinished product Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229950000845 politef Drugs 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 10
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000004944 Liquid Silicone Rubber Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 14
- 239000000047 product Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000009877 rendering Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses chip level LED packaging technology which comprises an addition-type liquid silicone rubber, flip chips and fluorescent powders. The chip level LED packaging technology mainly comprises a step of orderly weighing a fluorescent powder material and mixing uniformly, a step of uniformly mixing the mixed material and silica gel and carrying out defoaming to obtain fluorescent glue, a step of injecting the fluorescent glue into a mold and carrying out precuring to obtain a semi-solidified fluorescent film, a step of neatly arranging the flip chips at the surface of a PET film, a step of carrying out hot pressing curing on the arranged flip chips and the fluorescent film, carrying out cutting after cooling, and obtaining a chip level packaging LED lamp. The LED lamp prepared by using the technology has the advantages of simple process and high yield, and the manufacturing cost of an LED product is reduced greatly. At the same time, the light excitation and light uniformity are enhanced by using quantum dots.
Description
Technical field
Originally the present invention relates to LED encapsulation field, particularly relate to a kind of chip-scale LED packaging technology.
Background technology
In recent years, under the advocating and support with national governments relevant policies of whole world energy-saving and emission-reduction, LED illumination obtains quickly
Development.Have compared with conventional light source that life-span length, volume be little, energy-conservation, efficient, fast response time, antidetonation, the advantage such as pollution-free,
Be considered as " green illumination light source " that can enter general lighting field, LED large-scale application in general lighting be one must
Right trend.
Encapsulation is that LED produces the key link formed a connecting link, and in whole LED industry chain, the manufacturing cost of 50% is concentrated
In encapsulation.The function of encapsulation is the protection providing chip enough, prevents chip from exposing for a long time or mechanical damage
And lost efficacy, to improve the stability of chip；LED is encapsulated, in addition it is also necessary to there is good light extraction efficiency and good thermal diffusivity,
Good encapsulation can allow LED possess more preferable luminous efficiency and heat dissipation environment, and then promotes the life-span of LED.Through sending out for many years
Exhibition, China's LED encapsulation industry has tended to ripe, has defined complete LED and encapsulate industrial chain.Within 2014, global LED encapsulates market
Income reaches 14,600,000,000 dollars, it is contemplated that will increase to 176.4 hundred million dollars with the annual compound growth rate of 3.20% to the year two thousand twenty.
LED encapsulation experienced by LAMP (small-power), Piranha, and SMD encapsulates, high-power (Hi-power), COB integration packaging
Etc. several stages.Experienced by chip power growth, perfect, the encapsulating material (epoxy resin changes silica gel into) of sealed in unit among these
Improvement, the improvement of fluorescent material, the development of the factors such as expansion of application, create the whole industrial chain of current LED
Flourish.Along with commercial lighting and special lighting diversified demand, next packaging trend is high-density packages, and CSP (core
Chip size package) realize the representative form of high-density packages just.
According to the definition of J-STD-012 standard, CSP refers to a kind of advanced person encapsulating chi one-inch less than bare chip 1.2 times
Packing forms.Under equal area, the packaging density of chip-scale light source adds 16 times, and final encapsulation volume is than traditional contracting
Little by 80%, Design of Luminaires space is bigger.CSP have the advantage that 1 product without gold thread, thus reliability is higher；2 use electrically
Joint face contacts, and thermal resistance is low, is resistant to big electric current.Meanwhile, wafer-level package is by the welding package bottom weldering of direct for chip eutectic
Dish, simplifies production procedure, reduces production cost；3 are greatly reduced without support, thermal resistance, and same device volume can provide more
High-power.Therefore CSP encapsulation is gradually had an optimistic view of by industry.At present, 1.9 × 1.9mm and 1.5 that SSC is researched and developed ×
The CSP chip of 1.5mm has realized batch production.Samsung have developed second filial generation wafer-level package device, the second filial generation in 2015
The compactest only 1.2mm × 1.2mm of CSP product shape.Compared with first generation CSP, size reduction 30%, performance but improves simultaneously
10%.CSP LED product does well in backlight, flash lamp field, along with the progress of technology, following at high-power illumination neck
All there is good application in territory, especially in illumination and field of backlights.Following CSP light source cost will fall rapidly upon after will becoming
Continuous market development main force.
Currently, due to development cost and the immature problem of development technique, domestic CSP encapsulation is in the starting stage.Main
The technology path of stream is after disk cutting, carries out fluorescent powder coating, re-test, braid, this process and conventional point on chip
Glue packaging technology is even more like, thus it is uneven to yet suffer from phosphor powder layer structure, colour temperature, photochromic drift, yields after encapsulation
The problem such as low.
Summary of the invention
In view of drawbacks described above of the prior art or deficiency, the present invention provides that a kind of technique is simple, low cost, product are stable
The chip-scale LED packaging technology that property is excellent.
The present invention provides a kind of chip-scale LED packaging technology, comprises the following steps:
Step one: weigh phosphor raw material mix homogeneously successively；
Step 2: compound is mixed homogeneously with silica gel and deaeration, obtains fluorescent glue；
Step 3: fluorescent glue is injected mould, carries out precuring, obtains semi-solid preparation fluorescent film；
Step 4: by flip-chip proper alignment in PET film surface；
Step 5: by the flip-chip after arrangement and fluorescent film hot-press solidifying, obtain semi-finished product light source；
Step 6: cut after the cooling of semi-finished product light source, obtain wafer-level package LED lamp bead.
It is aluminate substrate fluorescent powder that described phosphor raw material is specially, and nitride substrate fluorescent material, fluoride matrix is glimmering
One or more in light powder；
Described phosphor raw material chromaticity coordinates X=0.362～0.656, phosphor raw material particle diameter is 10～15 μm；
Quantum dot is distributed in described silica gel, and described quantum dot is one or more in ZnS, CdZnSe or CdS；
Described fluorescent glue injecting glue mode is a plastic pin cylinder injection method；
Described fluorescent glue uses scraper plate to wipe redundance off；
Described scraper plate material is ganoid politef；
Described step the mode of blowing glue is along scraper of a certain fixed-direction；
Described chip is GaN flip-chip；
Described chip arrangement is rectangle or square uniformly arrangement；
Can arrangement chip number it be uniformly 2000～3500 on described PET film；
Described PET film one side has viscosity and thickness is 0.15 μm；
Described heat pressing process uses hydraulic press to carry out press mold solidification；
Described hot pressing condition is: pressure 0.5～1.5Mpa, the dwell time 10～30min.
The chip-scale LED packaging technology of the present invention, first prefabricated fluorescent film, is realized fluorescent film by heat pressing process with chip
Wafer-level package.Thus improve the yield of production efficiency and product, reduce producing equipment investment simultaneously, the most significantly drop
The manufacturing cost of low LED product.Use LED lamp bead prepared by this technique, a size of 1.0 × 1.0mm, colour temperature 3000～5000K,
Brightness 110～130lm, color rendering index > 80；The enhancing light that uses of quantum dot excites the uniformity with light.
Accompanying drawing explanation
Fig. 1 is fluorescent film schematic diagram；
Fig. 2 is arrangements of chips schematic diagram；
Fig. 3 is single lamp bead schematic diagram
1: fluorescence is thin, 2:PET thin film, 3: flip-chip.
Detailed description of the invention
Below in conjunction with embodiment, the application is described in further detail.It is understood that tool described herein
Body embodiment is used only for explaining related invention, rather than the restriction to this invention.
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can phases
Combination mutually.The application is described in detail below with reference to embodiment.
Embodiment 1
By aluminate substrate fluorescent powder, nitride substrate fluorescent material 8:1～6:1 in mass ratio mixing, chromaticity coordinates X after mixing
=0.382～0.405, particle diameter 13.6 μm；Phosphor raw material and silica gel are stirred and pours mould, described silica gel after deaeration into
In ZnS quantum dot is distributed, precuring becomes fluorescent film；Then chip is lined up 100 × 100mm at PET film2Square, keeps
Chip chamber gap 0.8～1.2mm；Finally that chip is hot-forming at hydraulic press with fluorescent film, hydraulic press pressure 0.5～
1.0Mpa, the dwell time 20～30min, after cooling, cutting obtains 2000～3500 CSP encapsulation lamp bead.After tested, lamp bead
A size of 1.0 × 1.0mm, colour temperature 5000～6000K, brightness 120～130lm, color rendering index 80～85.
Embodiment 2
First by aluminate substrate fluorescent powder, nitride substrate fluorescent material 6:1～5:1 in mass ratio mixing, color after mixing
Coordinate X=0.397～0.421, particle diameter 14.1 μm；Phosphor raw material and silica gel are stirred and pours mould, institute after deaeration into
Stating and CdZnSe quantum dot is distributed in silica gel, precuring becomes fluorescent film；Then chip is lined up 100 × 100mm at PET film2Just
Square, keep chip chamber gap 0.8～1.2mm；Finally that chip is hot-forming at hydraulic press with fluorescent film, hydraulic press pressure
1.0～1.5Mpa, the dwell time 10～20min, after cooling, cutting obtains 2000～3500 CSP encapsulation lamp bead.After tested, lamp
The size of pearl is 1.0 × 1.0mm, colour temperature 4000～5000K, brightness 1150～125lm, color rendering index 85～90.
Embodiment 3
First by aluminate substrate fluorescent powder, nitride substrate fluorescent material 5:1～3:1 in mass ratio mixing, color after mixing
Coordinate X=0.412～0.435, particle diameter 13.8 μm；Secondly phosphor raw material and silica gel are stirred and pours mould after deaeration into
Tool, is distributed CdS quantum dot in described silica gel, precuring becomes fluorescent film；Then chip is lined up 100 × 100mm at PET film2
Square, keeps chip chamber gap 0.8～1.2mm；Finally that chip is hot-forming at hydraulic press with fluorescent film, hydraulic press pressure
0.5～1.0Mpa, the dwell time 20～30min, after cooling, cutting obtains 2000～3500 CSP LED lamp bead.After tested, lamp
The size of pearl is 1.0 × 1.0mm, colour temperature 3000～4000K, brightness 110～120lm, color rendering index 90～93.
Embodiment 4
First by aluminate substrate fluorescent powder, nitride substrate fluorescent material 4:1～2:1 in mass ratio mixing, color after mixing
Coordinate X=0.382～0.442, particle diameter 13.3 μm；Secondly fluorescent material and silica gel are stirred and pours mould, institute after deaeration into
State and ZnS is distributed in silica gel, CdS quantum dot precuring becomes fluorescent film；Then chip is lined up 100 × 100mm at PET film2Just
Square, keep chip chamber gap 0.8～1.2mm；Finally that chip is hot-forming at hydraulic press with fluorescent film, hydraulic press pressure
0.5～1.0Mpa, the dwell time 15～25min, after cooling, cutting obtains 2000～3500 CSP encapsulation lamp bead.After tested, lamp
The size of pearl is 1.0 × 1.0mm, colour temperature 3500～4500K, brightness 110～130lm, color rendering index 90～95.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.People in the art
Member should be appreciated that invention scope involved in the application, however it is not limited to the technology of the particular combination of above-mentioned technical characteristic
Scheme, also should contain in the case of without departing from described inventive concept simultaneously, above-mentioned technical characteristic or its equivalent feature carry out
Combination in any and other technical scheme of being formed.Such as features described above has similar merit with (but not limited to) disclosed herein
The technical scheme that the technical characteristic of energy is replaced mutually and formed.
Claims (10)
1. a chip-scale LED packaging technology, it is characterised in that comprise the following steps:
Step one: weigh phosphor raw material mix homogeneously successively；
Step 2: compound is mixed homogeneously with silica gel and deaeration, obtains fluorescent glue；
Step 3: fluorescent glue is injected mould, carries out precuring, obtains semi-solid preparation fluorescent film；
Step 4: by flip-chip proper alignment in PET film surface；
Step 5: by the flip-chip after arrangement and fluorescent film hot-press solidifying, obtain semi-finished product light source；
Step 6: cut after the cooling of semi-finished product light source, obtain wafer-level package LED lamp bead.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that described step one fluorescent material is former
Material is specially as aluminate substrate fluorescent powder, nitride substrate fluorescent material, one or more in fluoride matrix fluorescent material.
3. a kind of chip-scale LED packaging technology according to claim 1, described in 2, it is characterised in that described step one fluorescent material
Raw material chromaticity coordinates X=0.362～0.656, phosphor raw material particle diameter is 10～15 μm.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that divide in described step 2 silica gel
Being furnished with quantum dot, described quantum dot is one or more in ZnS, CdZnSe or CdS.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that described step 3 fluorescent glue is noted
Glue mode is a plastic pin cylinder injection method.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that described step 3 also includes adopting
Wiping unnecessary fluorescent glue off with scraper plate, described scraper plate material is ganoid politef.
7. a kind of chip-scale LED packaging technology according to claim 1, described in 6, it is characterised in that frictioning in described step 3
Mode is along scraper of a certain fixed-direction.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that described step 4 chips is
GaN flip-chip, arrangement mode is rectangle or square, and chip number is 2000～3500.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that in described step 4, PET film is
Sticking thin film is had for thick 0.15 μm one side.
A kind of chip-scale LED packaging technology the most according to claim 1, it is characterised in that use liquid in described step 5
Press carries out hot pressing, and pressure is 0.5～1.5Mpa, the dwell time 10～30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610622039.6A CN106058013A (en) | 2016-07-29 | 2016-07-29 | Chip level LED packaging technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610622039.6A CN106058013A (en) | 2016-07-29 | 2016-07-29 | Chip level LED packaging technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106058013A true CN106058013A (en) | 2016-10-26 |
Family
ID=57197018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610622039.6A Pending CN106058013A (en) | 2016-07-29 | 2016-07-29 | Chip level LED packaging technology |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068814A (en) * | 2017-04-11 | 2017-08-18 | 安徽芯瑞达科技股份有限公司 | A kind of one side quantum dot CSP backlights and preparation method thereof |
| CN107546220A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | LED light source and preparation method thereof |
| CN110120444A (en) * | 2019-04-18 | 2019-08-13 | 苏州星烁纳米科技有限公司 | The preparation method and products thereof of quantum dot light emitting device |
| US10505086B2 (en) | 2017-09-29 | 2019-12-10 | Au Optronics Corporation | Light source device |
| CN111106227A (en) * | 2018-10-25 | 2020-05-05 | 江苏罗化新材料有限公司 | Simple thin film CSP packaging structure and method |
| CN113707792A (en) * | 2021-09-02 | 2021-11-26 | 鸿利智汇集团股份有限公司 | CSP manufacturing process |
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| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN103165797A (en) * | 2013-03-13 | 2013-06-19 | 上海大学 | Preformed phosphor thin film for white light-emitting diode (LED) thin film packaging and preparation method for thin film |
| CN104253194A (en) * | 2014-09-18 | 2014-12-31 | 易美芯光（北京）科技有限公司 | Structure and method for packaging of chip-size white LED (light emitting diode) |
| CN104810458A (en) * | 2015-05-04 | 2015-07-29 | 华东师范大学 | COB packaging process for integrating LED distance light and dipped light of automotive headlamp |
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Patent Citations (4)
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| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN103165797A (en) * | 2013-03-13 | 2013-06-19 | 上海大学 | Preformed phosphor thin film for white light-emitting diode (LED) thin film packaging and preparation method for thin film |
| CN104253194A (en) * | 2014-09-18 | 2014-12-31 | 易美芯光（北京）科技有限公司 | Structure and method for packaging of chip-size white LED (light emitting diode) |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546220A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | LED light source and preparation method thereof |
| CN107068814A (en) * | 2017-04-11 | 2017-08-18 | 安徽芯瑞达科技股份有限公司 | A kind of one side quantum dot CSP backlights and preparation method thereof |
| US10505086B2 (en) | 2017-09-29 | 2019-12-10 | Au Optronics Corporation | Light source device |
| CN111106227A (en) * | 2018-10-25 | 2020-05-05 | 江苏罗化新材料有限公司 | Simple thin film CSP packaging structure and method |
| CN110120444A (en) * | 2019-04-18 | 2019-08-13 | 苏州星烁纳米科技有限公司 | The preparation method and products thereof of quantum dot light emitting device |
| CN113707792A (en) * | 2021-09-02 | 2021-11-26 | 鸿利智汇集团股份有限公司 | CSP manufacturing process |
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Application publication date: 20161026 |