CN106054458A - Fluorescent film for backlight module and manufacturing method of fluorescent film - Google Patents
Fluorescent film for backlight module and manufacturing method of fluorescent film Download PDFInfo
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- CN106054458A CN106054458A CN201610683963.5A CN201610683963A CN106054458A CN 106054458 A CN106054458 A CN 106054458A CN 201610683963 A CN201610683963 A CN 201610683963A CN 106054458 A CN106054458 A CN 106054458A
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000002096 quantum dot Substances 0.000 claims abstract description 82
- 239000002245 particle Substances 0.000 claims abstract description 51
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 12
- 230000001070 adhesive effect Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 7
- 238000002288 cocrystallisation Methods 0.000 claims abstract description 4
- 239000012528 membrane Substances 0.000 claims description 71
- 238000002360 preparation method Methods 0.000 claims description 14
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 12
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000012266 salt solution Substances 0.000 claims description 7
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims description 3
- 235000019341 magnesium sulphate Nutrition 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920005990 polystyrene resin Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004337 magnesium citrate Substances 0.000 claims description 2
- 229960005336 magnesium citrate Drugs 0.000 claims description 2
- 235000002538 magnesium citrate Nutrition 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229920005749 polyurethane resin Polymers 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 229940021384 salt irrigating solution Drugs 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- PLSARIKBYIPYPF-UHFFFAOYSA-H trimagnesium dicitrate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PLSARIKBYIPYPF-UHFFFAOYSA-H 0.000 claims description 2
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 claims 1
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 claims 1
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 claims 1
- 235000017550 sodium carbonate Nutrition 0.000 claims 1
- 235000011083 sodium citrates Nutrition 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 7
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005303 weighing Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 5
- 239000012047 saturated solution Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention belongs to the technical field of backlight modules, and particularly relates to a fluorescent film for a backlight module and a manufacturing method of the fluorescent film. The manufacturing method includes the steps of (1), subjecting quantum dots and supersaturated saline solution to cocrystallization to form quantum-dot mixed crystal and grinding the quantum-dot mixed crystal completely; (2), adding adhesive into the quantum-dot mixed crystal while mixing uniformly and then adding in diffused particles while mixing uniformly to obtain a coating liquid for forming a quantum-dot layer; (3), coating a barrier film layer with the coating liquid for forming the quantum-dot layer to form a quantum-dot layer material; (4), laminating the other barrier film layer on the quantum-dot layer material to form a sandwich structure, and subjecting the sandwich structure to ultraviolet curing to obtain the fluorescent film. The fluorescent film manufactured by the method substitutes for a diffusion barrier of the conventional backlight module, improves color saturation and color gamut of the liquid crystal display greatly, and further can increase brightness and reduce power consumption.
Description
Technical field
The invention belongs to back light model setting technology field, be specifically related to a kind of fluorescence membrane for backlight module and preparation thereof
Method.
Background technology
Along with the development of Display Technique, the display quality of display device is required more and more higher by people.City at present
The colour gamut that LCD TV on face can show is at 68%～72%NTSC (National Television Standards
Committee) between, thus the color effect of high-quality it is not provided that.For improving the performance colour gamut of LCD TV, high colour gamut is carried on the back
The emphasis that light technology is being studied in just becoming industry.
Quantum dot film is a kind of blooming piece substituting diffusion barrier in LCD backlight module.Compare common white
Light LED, uses the backlight module of blue-ray LED collocation quantum dot film, can be obviously improved the color saturation of liquid crystal display, and
Brightness can be improved while promoting colour gamut, reduce power consumption.During preparing quantum dot film, conventional method is directly will amount
Son point mixes with adhesive, and growth over time, these adhesives there will be the impact on quantum dot light emitting efficiency cancellation, enters
And reduce high colour gamut and the stability of quantum dot film display screen.
Summary of the invention
Invention broadly provides a kind of fluorescence membrane for backlight module and preparation method thereof, prepared fluorescence is thin
Film instead of the diffusion barrier in existing backlight module, is significantly improving the color saturation of liquid crystal display and is promoting colour gamut
Simultaneously, moreover it is possible to improve brightness, power consumption is reduced.Its technical scheme is as follows: the preparation side of a kind of fluorescence membrane for backlight module
Method, comprises the following steps:
(I) quantum dot formed quantum dot mixed crystal with supersaturated salt solution cocrystallization and be fully ground；
(II) in quantum dot mixed crystal, add adhesive and mix homogeneously, be subsequently adding diffusion particle and fully mix,
Obtain quantum dot layer coating fluid；
(III) quantum dot layer coating solution is formed on one layer of Obstruct membrane dot layer material；
(IV) on dot layer material, compound another layer of Obstruct membrane forms sandwich structure, obtains fluorescence through ultra-violet curing
Thin film.
Preferably, described quantum dot is CdS, CdSe, CdTe, CdSeTe, CdSeS, InP, InAs, CdSe/ZnS, CdTe/
One or more in ZnS, CdSe/CdS and InP/ZnS semi-conducting material.
Preferably, described quantum dot accounts for the 10-20% of quantum dot mixed crystal quality, and described quantum dot accounts for dot layer material
0.1-1%, the particle diameter of described quantum dot mixed crystal is 10-40nm.
Preferably, in step (I), supersaturated salt solution is sodium chloride, potassium chloride, potassium bromide, sodium sulfate, magnesium sulfate, carbonic acid
One or more in the monovalence of sodium, sodium citrate and magnesium citrate or divalent salt solutions.
Preferably, described quantum dot includes that red light quantum point and green light quantum point, the particle diameter of described red light quantum point are 5-
9nm, the particle diameter of described green light quantum point is 1-4nm, and described red light quantum point accounts for the 10-50% of total quantum point mass.
Preferably, adhesive described in step (II) is acrylic resin, polyurethane resin, polystyrene resin, poly-first
One or more in base acrylic acid methyl ester. and epoxy resin, described adhesive accounts for the 85-96% of dot layer material quality.
Preferably, described in step (II), diffusion particle is polystyrene, polymethyl methacrylate, polymethylacrylic acid
One or more in butyl ester, silicone resin, titanium dioxide, brium carbonate and barium sulfate, described diffusion particle particle diameter is 3-35 μ
M, described diffusion particle accounts for the 2-12% of dot layer material quality.
Preferably, Obstruct membrane described in step (III) and step (IV) be have intercept steam, oxygen one or more layers
Thin film, the thickness of described Obstruct membrane is 30-100 μm, and fluorescence membrane thickness is 100-300 μm.
A kind of fluorescence membrane, described fluorescence membrane includes Obstruct membrane layer one, Obstruct membrane layer two and quantum dot layer, quantum dot layer
Being located between Obstruct membrane layer one and Obstruct membrane layer formation sandwich structure, quantum dot layer is by quantum dot mixed crystal, diffusion particle and glue
Glutinous agent is blended and forms.
Preferably, it is coated with red light quantum point and green light quantum point in quantum dot mixed crystal.
Use above-mentioned fluorescence membrane for backlight module and preparation method thereof, the invention have the advantages that
The present invention is by by quantum dot and saturated salt solution cocrystallization, being coated on quantum dot in crystal, it is to avoid quantum dot
With directly contacting of adhesive, prevent quantum dot cancellation, improve the stability of photoluminescence of quantum dot.Prepared fluorescence membrane replaces
Diffusion barrier in backlight module, while significantly improving the color saturation of liquid crystal display and promoting colour gamut, can improve
Brightness, minimizing power consumption, moreover it is possible to improve fluorescence membrane luminous efficiency and stability, brightness is substantially reduced with colour gamut decay, colour gamut
NTSC can reach 95-110%.
Accompanying drawing explanation
Fig. 1 is the structure chart of the fluorescence membrane for backlight module of the present invention.
Wherein: 1, Obstruct membrane layer one, 2, Obstruct membrane layer two, 3, quantum dot layer, 31, quantum dot mixed crystal, 311, red quantum
Point, 312, green light quantum point, 32, diffusion particle.
Detailed description of the invention
Embodiment 1
Weighing the HONGGUANG CdS quantum dot that 0.1g particle diameter is 5nm, 0.9g particle diameter is that the green glow CdTe quantum of 1nm joins
In saturated solution containing 4.0g sodium chloride, carry out being recrystallized to give quantum dot mixed crystal, be fully ground and obtain the mixed of particle diameter 10nm
Brilliant.Weighing 0.5g quantum dot mixed crystal, the polystyrene diffusion particle of 3.5g particle diameter 3 μm joins in 96.0g acrylic resin and fills
Divide mixing, then coat the Obstruct membrane layer upper surface of 30 μ m-thick, Obstruct membrane layer on quantum dot coating fluid upper surface is compound is purple
It is 100 μm fluorescence membranes that outer solidification obtains thickness.
As it is shown in figure 1, the structure chart of the fluorescence membrane prepared for said method.Described fluorescence membrane includes Obstruct membrane layer one
1, Obstruct membrane layer 22 and quantum dot layer 3, quantum dot layer 3 is located between Obstruct membrane layer 1 and Obstruct membrane layer 2 formation sandwich knot
Structure, quantum dot layer 3 is blended by quantum dot mixed crystal 31, diffusion particle 32 and adhesive and forms.It is coated with red in quantum dot mixed crystal 31
Light quanta point 311 and green light quantum point 312.
Embodiment 2
Weighing the red CdSe/ZnS quantum dot that 0.5g particle diameter is 9nm, 0.5g particle diameter is that the green glow InP quantum dot of 4nm adds
In the saturated solution containing 9.0g sodium citrate, carry out being recrystallized to give quantum dot mixed crystal, be fully ground and obtain particle diameter 40nm
Mixed crystal.Weighing 10.0g quantum dot mixed crystal, the titanium dioxide diffusion particle of 5.0g particle diameter 35 μm joins 85.0g polyurethane tree
Fat fully mixes, then coats the Obstruct membrane layer upper surface of 100 μ m-thick, intercept on quantum dot coating fluid upper surface is compound
Film layer, it is 300 μm fluorescence membranes that ultra-violet curing obtains thickness.
The structure of fluorescence membrane prepared by said method is as shown in Figure 1.
Embodiment 3
Weighing the HONGGUANG CdSe/ZnS quantum dot that 0.6g particle diameter is 7nm, 2.4g particle diameter is the green glow CdSe/ZnS quantum of 3nm
Point joins in the saturated solution containing 17.0 magnesium sulfate, carries out being recrystallized to give quantum dot mixed crystal, is fully ground and obtains particle diameter
The mixed crystal of 20nm.Weighing 2.0g quantum dot mixed crystal, the polymethyl methacrylate diffusion particle of 12.0g particle diameter 10 μm joins
86.0g polystyrene resin fully mixes, then coats the Obstruct membrane layer upper surface of 50 μ m-thick, on quantum dot coating fluid
Obstruct membrane layer in surface recombination, it is 200 μm fluorescence membranes that ultra-violet curing obtains thickness.
The structure of fluorescence membrane prepared by said method is as shown in Figure 1.
Embodiment 4
Weighing the HONGGUANG InP/ZnS quantum dot that 0.4g particle diameter is 8nm, 0.8g particle diameter is the green glow CdSe/CdS quantum of 2nm
Point joins in the saturated solution containing 6.8g potassium bromide, carries out being recrystallized to give quantum dot mixed crystal, is fully ground and obtains particle diameter
The mixed crystal of 30nm.Weighing 8.0g quantum dot mixed crystal, the silicone resin diffusion particle of 2.0g particle diameter 22 μm joins the poly-first of 90.0g
Base acrylic acid methyl ester. fully mixes, then coats the Obstruct membrane layer upper surface of 70 μ m-thick, at quantum dot coating fluid upper surface
Compound upper Obstruct membrane layer, it is 250 μm fluorescence membranes that ultra-violet curing obtains thickness.
The structure of fluorescence membrane prepared by said method is as shown in Figure 1.
Embodiment 5
Weighing the HONGGUANG CdSe quantum dot that 0.2g particle diameter is 6nm, 0.4g particle diameter is that the green glow InAs quantum dot of 3nm joins
In saturated solution containing 3.4g sodium carbonate, carry out being recrystallized to give quantum dot mixed crystal, be fully ground and obtain the mixed of particle diameter 25nm
Brilliant.Weighing 4g quantum dot mixed crystal, the barium sulfate diffusion particle of 4g particle diameter 28 μm joins in 92.0g epoxy resin and fully mixes,
Then the Obstruct membrane layer upper surface of 85 μ m-thick is coated, Obstruct membrane layer on quantum dot coating fluid upper surface is compound, ultra-violet curing
Obtaining thickness is 270 μm fluorescence membranes.
The structure of fluorescence membrane prepared by said method is as shown in Figure 1.
Comparative example 1
Weighing the HONGGUANG CdSe quantum dot that 0.2g particle diameter is 6nm, 0.4g particle diameter is the green glow InAs quantum dot of 3nm, 3.4g
The crystals of sodium carbonate of particle diameter 25nm, the barium sulfate diffusion particle of 4g particle diameter 28 μm joins in 92.0g epoxy resin and fully mixes,
Then the Obstruct membrane layer upper surface of 85 μ m-thick is coated, Obstruct membrane layer on quantum dot coating fluid upper surface is compound, ultra-violet curing
Obtaining thickness is 270 μm fluorescence membranes.
Performance test
The fluorescence membrane of Example 1-5 and comparative example 1 preparation uses following method to test its performance:
Bright spot is tested: takes the fluorescence membrane of 14 cun of sizes, is placed in 14 cun of backlight modules, at the specified electricity of 24V
Pressure is lighted, and measures its brightness and chromaticity coordinate with luminance meter (BM-7).
Weatherability is tested, condition: temperature 85 DEG C, humidity RH85%, time: 1000h.
Colour gamut test is with calculating: takes the diaphragm of 14 cun of sizes, is placed in 14 cun of display, replaces diffusion barrier, will
Display adjusts to the duty of regulation, and whole audience red, green, blue signal is input to display, with luminance meter (BM-7) point
The chromaticity coordinate of other test center's point, calculates NTSC value by set formula.After weather resistant experiment, brightness is front with experiment bright
The ratio percent of degree is brightness decay amount, and after weather resistance test, the ratio percent of colour gamut NTSC colour gamut NTSC front with experiment is
Colour gamut NTSC attenuation.
Test result is as shown in table 1 below.
Table 1 the performance test results
Comparative example test result indicate that with embodiment, and in weatherability is tested, quantum dot is coated in crystal, Ke Yiti
The stability of photoluminescence of high quantum dot, reduces fluorescence membrane brightness and the decay of colour gamut.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (10)
1. the preparation method for the fluorescence membrane of backlight module, it is characterised in that: comprise the following steps:
(I) quantum dot formed quantum dot mixed crystal with supersaturated salt solution cocrystallization and be fully ground；
(II) in quantum dot mixed crystal, add adhesive and mix homogeneously, be subsequently adding diffusion particle and fully mix, obtain
Quantum dot layer coating fluid；
(III) quantum dot layer coating solution is formed on one layer of Obstruct membrane dot layer material；
(IV) on dot layer material, compound another layer of Obstruct membrane forms sandwich structure, obtains fluorescence through ultra-violet curing thin
Film.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: described quantum
Point is CdS, CdSe, CdTe, CdSeTe, CdSeS, InP, InAs, CdSe/ZnS, CdTe/ZnS, CdSe/CdS and InP/ZnS half
One or more in conductor material.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: described quantum
Point accounts for the 10-20% of quantum dot mixed crystal quality, and described quantum dot accounts for the 0.1-1% of dot layer material, described quantum dot mixed crystal
Particle diameter be 10-40nm.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: step (I)
Middle supersaturated salt solution is sodium chloride, potassium chloride, potassium bromide, sodium sulfate, magnesium sulfate, sodium carbonate, sodium citrate and magnesium citrate
Monovalence or divalent salt solutions in one or more.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: described quantum
Point includes that red light quantum point and green light quantum point, the particle diameter of described red light quantum point are 5-9nm, the particle diameter of described green light quantum point
For 1-4nm, described red light quantum point accounts for the 10-50% of total quantum point mass.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: step (II)
Described in adhesive be in acrylic resin, polyurethane resin, polystyrene resin, polymethyl methacrylate and epoxy resin
One or more, described adhesive accounts for the 85-96% of dot layer material quality.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: step (II)
Described in diffusion particle be polystyrene, polymethyl methacrylate, polybutyl methacrylate, silicone resin, titanium dioxide
One or more in titanium, brium carbonate and barium sulfate, described diffusion particle particle diameter is 3-35 μm, and described diffusion particle accounts for quantum dot
The 2-12% of layer material quality.
The preparation method of the fluorescence membrane for backlight module the most according to claim 1, it is characterised in that: step (III)
Being to have obstruct steam, one or more layers thin film of oxygen with Obstruct membrane described in step (IV), the thickness of described Obstruct membrane is
30-100 μm, fluorescence membrane thickness is 100-300 μm.
9. the fluorescence membrane prepared by the method described in any one of claim 1-8, it is characterised in that: described fluorescence membrane
Including Obstruct membrane layer one (1), Obstruct membrane layer two (2) and quantum dot layer (3), quantum dot layer (3) is located at Obstruct membrane layer one (1) and resistance
Forming sandwich structure between membrane layer (2), quantum dot layer (3) is by quantum dot mixed crystal (31), diffusion particle (32) and adhesive
It is blended and forms.
Fluorescence membrane the most according to claim 9, it is characterised in that: quantum dot mixed crystal is coated with red quantum in (31)
Point (311) and green light quantum point (312).
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Application publication date: 20161026 |