CN106054416A - Liquid crystal display thin film transistor structure - Google Patents
Liquid crystal display thin film transistor structure Download PDFInfo
- Publication number
- CN106054416A CN106054416A CN201610419122.3A CN201610419122A CN106054416A CN 106054416 A CN106054416 A CN 106054416A CN 201610419122 A CN201610419122 A CN 201610419122A CN 106054416 A CN106054416 A CN 106054416A
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- Prior art keywords
- transistor
- liquid crystal
- thin film
- film transistor
- grid
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
Abstract
The invention relates to a liquid crystal display thin film transistor structure. Compared with the prior art, the thin film transistor structure adds one or more redundant transistors which are connected to a working transistor in series, and a source and a drain of the redundant transistor are connected to pixel electrodes. Compared with the conventional liquid crystal display thin film transistor structure, the liquid crystal display thin film transistor structure adds the same redundant transistor which is connected to the working transistor in series, and then can block the working transistor having faults in the condition that a certain film transistor structure of an array panel of a liquid crystal display device occurs transistor defects which result in defect points (bright points or dark points), communicates with an alternate redundant transistor to restore a function of the transistor in the thin film transistor unit and then completely restore a color display function of the thin film transistor structure, and then can change the current situation that the bright points can be changed into dark points, but the dark points cannot be repaired completely in the prior art.
Description
Technical field
The present invention relates to a kind of thin film transistor structure for liquid crystal display device.
Background technology
The phosphor powder that traditional CRT monitor relies on cathode ray tube to launch on electronic impact screen shows image, but
The principle of liquid crystal display is the most entirely different, as shown in Figure 1.Generally, liquid crystal display (LCD) device has upper substrate and infrabasal plate,
There is certain intervals each other and face mutually.The multiple electrodes being formed on two substrates are facing each other.Liquid crystal be clipped in upper substrate and
Between infrabasal plate.Voltage is applied on liquid crystal by the electrode on substrate, then changes liquid crystal molecule according to the voltage acted on
Arrangement thus show image because that liquid crystal indicator does not launch light, it needs light source to show image.Cause
This, liquid crystal indicator has the backlight being positioned at liquid crystal panel below.Arrangement according to liquid crystal molecule controls to enter from backlight
The light quantity penetrated thus show image.Glass substrate, colored filter, electrode, liquid crystal layer and crystalline substance is accompanied between two pieces of polaroids
Body pipe thin film, liquid crystal molecule is the material with refractive index and dielectric constant anisotropy.Under the light that backlight sends passes through
Polaroid, becomes the polarized light with certain polarization direction.Institute's making alive between transistor controlled electrode, and this voltage acts on
Liquid crystal controls the polarization direction of polarized light, and polarized light forms monochromatic polarized light through after corresponding color film chromatograph, if polarization
Light can penetrate upper strata polaroid, then demonstrate corresponding color；Electric field intensity is different, and the deflection angle of liquid crystal molecule is the most not
With, the light intensity passed through is different, and the brightness of display is the most different.Shown by the combination of the different light intensity of three kinds of colors of RGB
Motley image.
In the manufacture process of liquid crystal display, needing higher cleanliness factor, short grained dust can cause bad sending out
Raw.Also various defect it is easily created additionally, due to process deviation.Particularly may when defect occurs in transistor part
Point defect can be formed.
The most conventional some restorative procedure is to drive line and pixel to break into short circuit grid 8 by laser bright spot, thus
Bright spot is become dim spot.Dim spot then cannot be carried out repairing, and will cause defective products when the amount of dim spot exceedes some.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of thin film transistor structure for liquid crystal display device, works as liquid crystal display
When thin-film transistor structure deposits point defect, it is possible to thoroughly repair bright spot, change and bright spot can only be become dim spot at present, and dim spot without
The phenomenon that method is thoroughly repaired.
In order to solve above-mentioned technical problem, this invention takes following technical scheme: a kind of liquid crystal display film crystal
Tubular construction, including working transistor, pixel electrode, holding wire, gate line, the source electrode of working transistor and holding wire are even
Connect, the drain electrode of working transistor and pixel electrode connect, the grid of working transistor is connected with gate line, increase by one or
The multiple idle transistors of person, working transistor and idle transistors series connection.The source electrode of idle transistors and drain electrode are simultaneously and pixel
Electrode connects.
Due to the thin film transistor structure for liquid crystal display device in compared to existing technology, the present invention is many one with work crystal
The identical idle transistors of pipe parallel series so that certain thin film transistor (TFT) knot in the arraying bread board of liquid crystal indicator
In the case of structure generation transistor illness causes defective point (bright spot or dim spot) to produce, the work that can be broken down by blocking-up
Make transistor, connect the means such as standby idle transistors, recover the function of transistor in this film crystal pipe unit, enter
And thoroughly recover the color displays function of this thin film transistor (TFT) cellular construction, thus change can only be by bright spot in prior art
Become dim spot, and the present situation that dim spot cannot thoroughly be repaired.
Accompanying drawing explanation
Fig. 1 embodiment of the present invention 1 structural representation.
Fig. 2 embodiment of the present invention 1 repairs point defect schematic diagram.
Fig. 3 embodiment of the present invention 2 structural representation.
Fig. 4 embodiment of the present invention 2 repairs point defect schematic diagram.
Fig. 5 embodiment of the present invention 3 structural representation.
Fig. 6 embodiment of the present invention 3 repairs point defect schematic diagram.
Wherein: 1, working transistor, 2, idle transistors, 3, holding wire, 4, grid 8 holding wire, 5, pixel electrode, 6, source
Pole, 7, drain electrode, 8, grid, 9, grid have a common boundary, 10, transistor channel portion, 11, laser cutting point, 12, laser hits point.
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1, as it is shown in figure 1, two transistor takes series model, the source electrode 6 of idle transistors 2 and drain electrode 7 are simultaneously
Being connected with pixel electrode 5, grid 8 and the gate line 4 of idle transistors 2 connect, under duty at ordinary times, because superfluous
The source electrode 6 of remaining transistor 2 and drain electrode 7 are connected on pixel electrode 5 formation short-circuit structure simultaneously, and its on-off action actual is work
Transistor 1.
As in figure 2 it is shown, when working transistor 1 be short-circuited or in the case of open circuit by following processing step at
Reason: the first step, is cut the grid 8 of working transistor 1 with gate line 4 by laser, and by the source of working transistor 1
Pole 6, drain electrode 7 form short circuit, working transistor by laser hits with the following metallic pattern separated with gate line 4
1 plays substantial wire effect.The metal part connecting two transistor is cut by laser by second step with pixel electrode 5 part
Disconnected, signal is directly transferred to the source electrode 6 of idle transistors 2 from holding wire 3, so that idle transistors 2 plays on-off action.
Embodiment 2, as it is shown on figure 3, two transistor takes series model, the source electrode 6 of idle transistors 2 and drain electrode 7 are simultaneously
Being connected with pixel electrode 5, grid 8 and the gate line 4 of idle transistors 2 disconnect, the grid 8 of idle transistors 2 and grid
Between holding wire 4, the grid that is provided above in gap has a common boundary 9, under duty at ordinary times because the source electrode of idle transistors 26 with
Drain electrode 7 is connected on pixel electrode 5 formation short-circuit structure simultaneously, and its on-off action actual is working transistor 1.Idle transistors
2 reduce its side effect brought when or else acting on as far as possible, are therefore completely cut off with gate line 4 by the grid 8 of idle transistors 2
Opening, the grid 8 of the second metal level is had a common boundary 9 and is existed with floating electrode state, can reduce due to Redundancy Design in this way
The impact of parasitic capacitance that brings of idle transistors 2.
As shown in Figure 4, when working transistor 1 is short-circuited or in the case of open circuit, then the first step, by laser by work
The grid 8 making transistor 1 cuts with gate line 4, and the source electrode 6 of working transistor 1, drain electrode 7 are passed through laser hits
Forming short circuit with the following metallic pattern separated with gate line 4, working transistor 1 plays substantial wire and makees
With.The metal part connecting two transistor is passed through laser cutting with pixel electrode 5 part by second step, and signal is directly from holding wire
3 source electrodes 6 being transferred to idle transistors 2, utilize laser hits to pass through the second metal level the grid 8 of idle transistors 2 simultaneously
I.e. grid is had a common boundary two of 9 and is turned on gate line 4.So that idle transistors 2 plays on-off action.
Embodiment 3, as it is shown in figure 5, two transistor takes traverse pattern of connecting, working transistor 1 and idle transistors 2 horizontal stroke
To series connection, source electrode 6 and the drain electrode 7 of idle transistors 2 are connected with pixel electrode 5 simultaneously, working transistor 1 and idle transistors 2
Laterally connecting, grid 8 and the gate line 4 of idle transistors 2 disconnect, the grid 8 of idle transistors 2 and gate line 4
Between the grid that is provided above in gap have a common boundary 9, under duty at ordinary times because the source electrode of idle transistors 26 and drain electrode 7 with
Time be connected on pixel electrode 5 formation short-circuit structure, its on-off action actual is working transistor 1.
As shown in Figure 6, will work as working transistor 1 simultaneously and be short-circuited or in the case of open circuit, then the first step, by swashing
The grid 8 of working transistor 1 is cut by light with gate line 4, and by the source electrode 6 of working transistor 1, drain electrode 7 by swashing
Light hits and forms short circuit with the following metallic pattern separated with gate line 4, and working transistor 1 plays substantial leading
Line effect.The metal part connecting two transistor is passed through laser cutting with pixel electrode 5 part by second step, and signal is directly from letter
Number line 3 is transferred to the source electrode 6 of idle transistors 2, simultaneously by the grid 8 of idle transistors 2, by laser hits the second metal level
I.e. grid has a common boundary the method at two of 9, turns on gate line 4.So that idle transistors 2 plays on-off action.
The present invention chooses 5 layers of mask technique for convenience of explanation and illustrates as embodiment, but is not limited to 5 layers.
Claims (4)
1. a thin film transistor structure for liquid crystal display device, including working transistor (1), pixel electrode (5), holding wire (3), grid
Pole holding wire (4), the source electrode (6) of working transistor (1) and holding wire (3) connection, the drain electrode (7) of working transistor (1) and picture
Element electrode (5) connects, the grid (8) of working transistor (1) is connected with gate line (4), it is characterised in that increase by one or
The multiple idle transistors of person (2), working transistor (1) and idle transistors (2) series connection.
2. thin film transistor structure for liquid crystal display device as claimed in claim 1, is characterized in that, the source electrode of idle transistors (2)
(6) being connected with pixel electrode (5) with drain electrode (7), the grid (8) of idle transistors (2) and gate line (4) connect simultaneously.
3. thin film transistor structure for liquid crystal display device as claimed in claim 2, is characterized in that, idle transistors 2) source electrode
(6) being connected with pixel electrode (5) with drain electrode (7), the grid (8) of idle transistors (2) and gate line (4) disconnect simultaneously,
Between grid (8) and the gate line (4) of idle transistors (2), the grid that is provided above in gap has a common boundary (9).
4. thin film transistor structure for liquid crystal display device as claimed in claim 1, is characterized in that, the source electrode of idle transistors (2)
(6) being connected with pixel electrode (5) with drain electrode (7), working transistor (1) and idle transistors (2) are laterally connected simultaneously, and redundancy is brilliant
The grid (8) of body pipe (2) and gate line (4) disconnect, between grid (8) and the gate line (4) of idle transistors (2)
The grid that is provided above in gap has a common boundary (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419122.3A CN106054416A (en) | 2016-06-15 | 2016-06-15 | Liquid crystal display thin film transistor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419122.3A CN106054416A (en) | 2016-06-15 | 2016-06-15 | Liquid crystal display thin film transistor structure |
Publications (1)
| Publication Number | Publication Date |
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| CN106054416A true CN106054416A (en) | 2016-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610419122.3A Withdrawn CN106054416A (en) | 2016-06-15 | 2016-06-15 | Liquid crystal display thin film transistor structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594553A (en) * | 2018-05-08 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of array substrate, its restorative procedure and display device |
| US11476301B2 (en) | 2020-01-14 | 2022-10-18 | Au Optronics Corporation | Display apparatus and manufacturing method thereof |
| US11670253B2 (en) | 2021-02-08 | 2023-06-06 | Boe Technology Group Co., Ltd. | Pixel driving circuit, array substrate and display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101382709A (en) * | 2007-09-04 | 2009-03-11 | 上海广电Nec液晶显示器有限公司 | Thin film transistor structure for liquid crystal display device |
| CN102566178A (en) * | 2011-12-26 | 2012-07-11 | 深圳市华星光电技术有限公司 | Thin film transistor liquid crystal display, baseplate and manufacturing method |
-
2016
- 2016-06-15 CN CN201610419122.3A patent/CN106054416A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101382709A (en) * | 2007-09-04 | 2009-03-11 | 上海广电Nec液晶显示器有限公司 | Thin film transistor structure for liquid crystal display device |
| CN102566178A (en) * | 2011-12-26 | 2012-07-11 | 深圳市华星光电技术有限公司 | Thin film transistor liquid crystal display, baseplate and manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594553A (en) * | 2018-05-08 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of array substrate, its restorative procedure and display device |
| CN108594553B (en) * | 2018-05-08 | 2022-09-09 | 京东方科技集团股份有限公司 | Array substrate, repairing method thereof and display device |
| US11476301B2 (en) | 2020-01-14 | 2022-10-18 | Au Optronics Corporation | Display apparatus and manufacturing method thereof |
| US11670253B2 (en) | 2021-02-08 | 2023-06-06 | Boe Technology Group Co., Ltd. | Pixel driving circuit, array substrate and display panel |
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Application publication date: 20161026 |
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