CN106053550A - Preparation method of gas-sensitive semiconductor device - Google Patents
Preparation method of gas-sensitive semiconductor device Download PDFInfo
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- CN106053550A CN106053550A CN201610391580.0A CN201610391580A CN106053550A CN 106053550 A CN106053550 A CN 106053550A CN 201610391580 A CN201610391580 A CN 201610391580A CN 106053550 A CN106053550 A CN 106053550A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
Abstract
The invention discloses a preparation method of a gas-sensitive semiconductor device. The preparation method comprises specific steps as follows: (1) a device is put into pure water through a ceramic tube for ultrasonic treatment, then put into an acetone solution for ultrasonic treatment, put into an isopropanol solution for ultrasonic treatment and put into a vacuum drying oven to be dried; (2) the ceramic tube is uniformly coated with blended gas-sensitive semi-conductor paste, a wire is attached to the ceramic tube to serve as an electrode lead, and the ceramic tube is left to stand naturally, put into the drying oven to be dried and then put into a sintering kiln to be sintered; (3) the sintered element is naturally cooled to the room temperature, an electric resistance wire penetrates through the ceramic tube and welded on the electrode lead, and the device is connected with a circuit after welding and works for a period of time. The preparation method has the benefits as follows: the preparation process is simple, parameters are easy to control, and the prepared gas-sensitive semiconductor device is good in stability and high in sensitivity and meets practical application requirements.
Description
Technical field
The present invention relates to semiconductor element preparing technical field, the preparation method of a kind of gas sensory device.
Background technology
Gas sensory element can play different effects according to the situation of own physical qualitative change after contact gas, logical
The aspects such as the monitoring being usually used in the detection of harmful gas, experimental gas.Gas sensory preparation method is varied, including gas phase
The chemical methodes such as physical method and collosol and gel such as precipitation, but the usual preparation process of these preparation methoies is more complicated, parameter control
System is difficulty, and most of method can not meet the requirement of batch production, or the pollution that caused of using method is relatively greatly and cost
Higher.
Summary of the invention
It is an object of the invention to, for solving the problems of the prior art, disclose the preparation side of a kind of gas sensory device
Method.
For achieving the above object, the invention discloses the preparation method of a kind of gas sensory device, it specifically prepares step
Suddenly it is:
(1) being inserted by device earthenware and carry out ultrasonic in pure water, ultrasonic time is set as 10-12 minute, after to insert acetone molten
In liquid ultrasonic 10-12 minute, then insert in aqueous isopropanol ultrasonic 12-15 minute, then insert drying 20-30 in vacuum drying oven
Minute, dry temperature and be set as 100-120 DEG C；
(2) the gas sensory slurry modulated is spread upon on earthenware uniformly, and adhere to 4-6 root wire and draw as electrode
Foot, after naturally placing 20-30 minute, inserts drying in oven 15-20 minute, dries temperature and is 200-220 DEG C, then inserts sintering
Sintering 2-3 hour in kiln, sintering temperature is set as 800-1000 DEG C；
(3) after the element sintered being naturally cooled to room temperature, resistance wire is interspersed in earthenware, and is welded on electrode pin
On, again device is accessed in circuit after welding, at operating at voltages 72-120 hour of 4-6 volt.
Wherein said gas sensory slurry includes oxide semiconductor, glass dust and organic adjuvants.
Advantages of the present invention and good effect be:
The inventive method preparation process is relatively simple, and state modulator is easy, but the gas sensory device stability prepared is good,
Highly sensitive, meet the demand of actual application.
Detailed description of the invention
Specific embodiment one:
A kind of preparation method of gas sensory device, its concrete preparation process is:
(1) being inserted by device earthenware and carry out ultrasonic in pure water, ultrasonic time is set as 10 minutes, after insert in acetone soln
Ultrasonic 10 minutes, then insert in aqueous isopropanol ultrasonic 12 minutes, then insert in vacuum drying oven and dry 20 minutes, dry temperature
It is set as 100 DEG C；
(2) being spread upon uniformly on earthenware by the gas sensory slurry modulated, wherein gas sensory slurry includes oxygen
Compound quasiconductor, glass dust and organic adjuvants, and adhere to 4 wires and make electrode pin, after naturally placing 20 minutes, insert baking oven
Interior drying 15 minutes, drying temperature is 200 DEG C, then inserts sintering 2 hours in sintering oven, and sintering temperature is set as 800 DEG C；
(3) after the element sintered being naturally cooled to room temperature, resistance wire is interspersed in earthenware, and is welded on electrode pin
On, again device is accessed in circuit after welding, at the operating at voltages 72 hours of 4 volts.
Specific embodiment two:
A kind of preparation method of gas sensory device, its concrete preparation process is:
(1) being inserted by device earthenware and carry out ultrasonic in pure water, ultrasonic time is set as 12 minutes, after insert in acetone soln
Ultrasonic 12 minutes, then insert in aqueous isopropanol ultrasonic 15 minutes, then insert in vacuum drying oven and dry 30 minutes, dry temperature
It is set as 120 DEG C；
(2) being spread upon uniformly on earthenware by the gas sensory slurry modulated, wherein gas sensory slurry includes oxygen
Compound quasiconductor, glass dust and organic adjuvants, and adhere to 6 wires and make electrode pin, after naturally placing 30 minutes, insert baking oven
Interior drying 20 minutes, drying temperature is 220 DEG C, then inserts sintering 3 hours in sintering oven, and sintering temperature is set as 1000 DEG C；
(3) after the element sintered being naturally cooled to room temperature, resistance wire is interspersed in earthenware, and is welded on electrode pin
On, again device is accessed in circuit after welding, at the operating at voltages 120 hours of 6 volts.
Specific embodiment three:
A kind of preparation method of gas sensory device, its concrete preparation process is:
(1) being inserted by device earthenware and carry out ultrasonic in pure water, ultrasonic time is set as 11 minutes, after insert in acetone soln
Ultrasonic 11 minutes, then insert in aqueous isopropanol ultrasonic 13 minutes, then insert in vacuum drying oven and dry 25 minutes, dry temperature
It is set as 110 DEG C；
(2) being spread upon uniformly on earthenware by the gas sensory slurry modulated, wherein gas sensory slurry includes oxygen
Compound quasiconductor, glass dust and organic adjuvants, and adhere to 5 wires and make electrode pin, after naturally placing 25 minutes, insert baking oven
Interior drying 18 minutes, drying temperature is 210 DEG C, then inserts sintering 2.5 hours in sintering oven, and sintering temperature is set as 900 DEG C；
(3) after the element sintered being naturally cooled to room temperature, resistance wire is interspersed in earthenware, and is welded on electrode pin
On, again device is accessed in circuit after welding, at the operating at voltages 96 hours of 5 volts.
The above, the only present invention preferably detailed description of the invention, but protection scope of the present invention is not limited thereto,
Any those familiar with the art in the technical scope that the invention discloses, according to technical scheme and
Inventive concept equivalent or change in addition, all should contain within protection scope of the present invention.
Claims (2)
1. the preparation method of a gas sensory device, it is characterised in that its concrete preparation process is:
(1) being inserted by device earthenware and carry out ultrasonic in pure water, ultrasonic time is set as 10-12 minute, after to insert acetone molten
In liquid ultrasonic 10-12 minute, then insert in aqueous isopropanol ultrasonic 12-15 minute, then insert drying 20-30 in vacuum drying oven
Minute, dry temperature and be set as 100-120 DEG C；
(2) the gas sensory slurry modulated is spread upon on earthenware uniformly, and adhere to 4-6 root wire and draw as electrode
Foot, after naturally placing 20-30 minute, inserts drying in oven 15-20 minute, dries temperature and is 200-220 DEG C, then inserts sintering
Sintering 2-3 hour in kiln, sintering temperature is set as 800-1000 DEG C；
(3) after the element sintered being naturally cooled to room temperature, resistance wire is interspersed in earthenware, and is welded on electrode pin
On, again device is accessed in circuit after welding, at operating at voltages 72-120 hour of 4-6 volt.
The preparation method of a kind of gas sensory device the most according to claim 1, it is characterised in that: described air-sensitive is partly led
Somaplasm material includes oxide semiconductor, glass dust and organic adjuvants.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610391580.0A CN106053550A (en) | 2016-06-06 | 2016-06-06 | Preparation method of gas-sensitive semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610391580.0A CN106053550A (en) | 2016-06-06 | 2016-06-06 | Preparation method of gas-sensitive semiconductor device |
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| CN106053550A true CN106053550A (en) | 2016-10-26 |
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| CN201610391580.0A Pending CN106053550A (en) | 2016-06-06 | 2016-06-06 | Preparation method of gas-sensitive semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110412086A (en) * | 2019-08-02 | 2019-11-05 | 东北大学 | One kind being based on perovskite structure ZnSnO3Isopropanol gas sensor of nanosphere and preparation method thereof |
| CN110579509A (en) * | 2019-09-27 | 2019-12-17 | 西南交通大学 | ppb level hydrogen sulfide gas sensor based on IGZO nanoparticles and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61155749A (en) * | 1984-12-27 | 1986-07-15 | Fuigaro Giken Kk | Lambda sensor |
| CN1334461A (en) * | 2001-09-03 | 2002-02-06 | 西安交通大学 | Process for preparing air/fuel ratio thick-film sensor with wide temp range and narrow resistance band |
| CN101281159A (en) * | 2008-05-16 | 2008-10-08 | 曲阜师范大学 | Nanometer zinc oxide multifunctional gas-sensitive sensor device and making method thereof |
| CN101581687A (en) * | 2009-06-24 | 2009-11-18 | 中南大学 | Cadmium sulfide coating carbon nano tube gas-sensitive material and manufacture method of gas-sensitive element |
| CN104316568A (en) * | 2014-10-15 | 2015-01-28 | 陕西易阳科技有限公司 | Method for preparing thick film type SnO2 gas sensitive element |
| CN105911105A (en) * | 2016-04-26 | 2016-08-31 | 武汉大学 | CO sensing material of SnO2 doped catalyst and preparation method and application of CO sensing material |
-
2016
- 2016-06-06 CN CN201610391580.0A patent/CN106053550A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61155749A (en) * | 1984-12-27 | 1986-07-15 | Fuigaro Giken Kk | Lambda sensor |
| CN1334461A (en) * | 2001-09-03 | 2002-02-06 | 西安交通大学 | Process for preparing air/fuel ratio thick-film sensor with wide temp range and narrow resistance band |
| CN101281159A (en) * | 2008-05-16 | 2008-10-08 | 曲阜师范大学 | Nanometer zinc oxide multifunctional gas-sensitive sensor device and making method thereof |
| CN101581687A (en) * | 2009-06-24 | 2009-11-18 | 中南大学 | Cadmium sulfide coating carbon nano tube gas-sensitive material and manufacture method of gas-sensitive element |
| CN104316568A (en) * | 2014-10-15 | 2015-01-28 | 陕西易阳科技有限公司 | Method for preparing thick film type SnO2 gas sensitive element |
| CN105911105A (en) * | 2016-04-26 | 2016-08-31 | 武汉大学 | CO sensing material of SnO2 doped catalyst and preparation method and application of CO sensing material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110412086A (en) * | 2019-08-02 | 2019-11-05 | 东北大学 | One kind being based on perovskite structure ZnSnO3Isopropanol gas sensor of nanosphere and preparation method thereof |
| CN110579509A (en) * | 2019-09-27 | 2019-12-17 | 西南交通大学 | ppb level hydrogen sulfide gas sensor based on IGZO nanoparticles and preparation method thereof |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161026 |
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| WD01 | Invention patent application deemed withdrawn after publication |