CN106051267A - Semiconductor device in-vehicle valve system and solenoid driver - Google Patents
Semiconductor device in-vehicle valve system and solenoid driver Download PDFInfo
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- CN106051267A CN106051267A CN201610217188.4A CN201610217188A CN106051267A CN 106051267 A CN106051267 A CN 106051267A CN 201610217188 A CN201610217188 A CN 201610217188A CN 106051267 A CN106051267 A CN 106051267A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/064—Circuit arrangements for actuating electromagnets
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0675—Electromagnet aspects, e.g. electric supply therefor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D41/00—Electrical control of supply of combustible mixture or its constituents
- F02D41/20—Output circuits, e.g. for controlling currents in command coils
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
- G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
- H01F7/1805—Circuit arrangements for holding the operation of electromagnets or for holding the armature in attracted position with reduced energising current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
- H01F7/1844—Monitoring or fail-safe circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
- H01H47/32—Energising current supplied by semiconductor device
- H01H47/325—Energising current supplied by semiconductor device by switching regulator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
- H01F7/1844—Monitoring or fail-safe circuits
- H01F2007/1866—Monitoring or fail-safe circuits with regulation loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
- H01F2007/1888—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings using pulse width modulation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45588—Indexing scheme relating to differential amplifiers the IC comprising offset compensating means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45616—Indexing scheme relating to differential amplifiers the IC comprising more than one switch, which are not cross coupled
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Combustion & Propulsion (AREA)
- Chemical & Material Sciences (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to a semiconductor device in-vehicle valve system and solenoid driver. An output driving circuit outputs an output current to a solenoid incorporated in a vehicle through an output terminal. A detection resistor connected between the output terminal and the output driving circuit. An amplification unit configured to output an analog detection signal generated by amplifying a voltage between both ends of the detection resistor. A current generation circuit configured to output a reference current. A reference resistor connected between the current generation circuit and a ground and configured to output a reference voltage according to the reference current. An A/D converter configured to convert the analog detection signal into a digital detection signal using the reference voltage as a reference. A control circuit configured to control the output current output from the output driving circuit according to the digital detection signal.
Description
Technical field
The present invention relates to semiconductor device, vehicle-mounted valve system and solenoid driver, and example
Such as relating to control the semiconductor device of electromagnetic valve being arranged on the vehicle of such as automobile, vehicle-mounted valve
Door system and solenoid driver.
Background technology
Generally, the opened/closed of electromagnetic valve is controlled by providing electric current for solenoid or cut off electric current
System.Accordingly, it would be desirable to accurately detection input extremely solenoidal electric current is suitably to control electromagnetic valve.Cause
This, the electric current introducing detection input extremely solenoidal electric current controls semiconductor device (Japanese Unexamined
Patent disclosure No.2011-97434).
Summary of the invention
Semiconductor device for automobile uses in the environment of temperature extensively changes.Because partly leading
Body device has temperature characterisitic, therefore, it is difficult to accurately detection output is to solenoidal electric current.Therefore,
There is output to solenoidal electric current and can not be corrected as the situation of desirable value.In this case,
The changeableness of gear shift in car is caused owing to temperature changes.Therefore shifting shock is caused to increase or move back
Change the situation of ride quality.
Other purposes and new feature will be made to become aobvious and easy from the explanation of the specification and drawings
See.
According to an embodiment, it is provided that a kind of semiconductor device, including, it is configured to lead to electric current
Cross lead-out terminal to export to the solenoidal output driving circuit being integrated in vehicle；It is connected to defeated
Go out the detection resistor between terminal and output driving circuit；It is configured to output and passes through amplification detection
Voltage between the two ends of resistor and the amplifying unit of analog detection signal that produces；It is configured to
The current occuring circuit of output reference current；It is connected between current occuring circuit and earth terminal also
It is configured to the reference resistor according to reference current output reference voltage；It is configured to utilize with reference to electricity
Press as with reference to the A/D converter that analog detection signal is converted into digital detection signal；And
It is configured to control the control exporting electric current from output driving circuit output according to digital detection signal
Circuit.
According to an embodiment, it is provided that a kind of vehicle-mounted valve system, including: include that solenoid is also
The electromagnetic valve being arranged on vehicle；And be configured to control solenoidal solenoid driver.Spiral shell
Spool driver includes: be configured to provide the semiconductor device of electric power for solenoid；And structure
For controlling the pico computer of semiconductor device.Semiconductor device includes: be configured to export electric current
By lead-out terminal output to solenoidal output driving circuit；It is connected to lead-out terminal and output
Detection resistor between drive circuit；It is configured to export the two ends by amplification detection resistor
Between voltage and the amplifying unit of analog detection signal that produces；It is configured to export reference current
Current occuring circuit；It is connected between current occuring circuit and earth terminal and is configured to according to ginseng
Examine the reference resistor of electric current output reference voltage；It is configured to utilize reference voltage as with reference to inciting somebody to action
Analog detection signal is converted into the A/D converter of digital detection signal；And be configured to according to number
Word detection signal controls the control circuit of the output electric current from output driving circuit output.
According to an embodiment, it is provided that a kind of solenoid driver, including: it is configured to as installing
The solenoid of the electromagnetic valve on vehicle provides the semiconductor device of electric current；And be configured to control
The pico computer of semiconductor device.Semiconductor device includes: be configured to output electric current by defeated
Go out terminal output to solenoidal output driving circuit；It is connected to lead-out terminal and output drives electricity
Detection resistor between road；It is configured between the output two ends by amplification detection resistor
Voltage and the amplifying unit of analog detection signal that produces；It is configured to export the electric current of reference current
There is circuit；It is connected between current occuring circuit and earth terminal and is configured to according to reference current
The reference resistor of output reference voltage；It is configured to utilize reference voltage to examine as with reference to by simulation
Survey signal and be converted into the A/D converter of digital detection signal；And be configured to according to Digital Detecting
Signal controls the control circuit of the output electric current from output driving circuit output.
According to embodiment, can be for be arranged on vehicle in the case of independent of temperature variations
Solenoid provides electric current.
Accompanying drawing explanation
In conjunction with the following description of some embodiment of accompanying drawing will make above and other aspect, advantage
And feature becomes apparent from, wherein:
Fig. 1 is the vehicle schematically illustrating the semiconductor device integrating with good grounds first embodiment
The schematic diagram of the example of power train；
Fig. 2 is the block diagram of the structure schematically illustrating the semiconductor device according to first embodiment；
Fig. 3 is the output driving circuit schematically illustrating the semiconductor device according to first embodiment
The circuit diagram of pith of structure；
Fig. 4 is that explanation is as HSD (high-pressure side driver) connection and LSD (low side driver)
During disconnection according in the output driving circuit of the semiconductor device of first embodiment flowing electric current
Circuit diagram；
Fig. 5 is that explanation is as HSD (high-pressure side driver) disconnection and LSD (low side driver)
During connection according in the output driving circuit of the semiconductor device of first embodiment flowing electric current
Circuit diagram；
Fig. 6 is the output electric current of the semiconductor device according to first embodiment to be described and controls letter
Number curve chart；
Fig. 7 is the temperature characterisitic of the amplifying unit that the semiconductor device according to first embodiment is described
Curve chart；
Fig. 8 is that the temperature of the A/D converter that the semiconductor device according to first embodiment is described is special
The curve chart of property；
Fig. 9 is the temperature of the digital detection signal that the semiconductor device according to first embodiment is described
The curve chart of the example of characteristic；
Figure 10 is the flat of the example of the layout schematically illustrating detection resistor and reference resistor
Face figure；
Figure 11 is the frame of the structure schematically illustrating the semiconductor device 200 according to the second embodiment
Figure；
Figure 12 is to illustrate that correction is according to the temperature characterisitic in the semiconductor device of the second embodiment
The flow chart of process；
Figure 13 is the temperature that the digital detection signal in the initial measurement according to the second embodiment is described
The schematic diagram of degree characteristic；
Figure 14 is the curve chart of the adjustment of the change that the temperature characterisitic in step S2 and S3 is described；
Figure 15 is to illustrate by the control circuit identification of the semiconductor device according to the second embodiment
The curve chart of the example of the difference between output current value and actual output current value；
Figure 16 is the block diagram of the structure schematically illustrating the semiconductor device according to the 3rd embodiment；
Figure 17 is the amplifying unit schematically illustrating the semiconductor device according to the 3rd embodiment
The circuit diagram of structure；
Figure 18 is the block diagram of the structure schematically illustrating the semiconductor device according to the 4th embodiment；
Figure 19 is that the output schematically illustrating the semiconductor device according to the 4th embodiment drives electricity
The circuit diagram of the pith of the structure on road；And
Figure 20 is the amplifying unit schematically illustrating the semiconductor device according to the 4th embodiment
The circuit diagram of structure.
Detailed description of the invention
Hereinafter, with reference to accompanying drawing, embodiments of the invention will be described.In the accompanying drawings, identical group
Become element to be represented by same reference numbers, and as required, will not be provided it and repeat.
First embodiment
Semiconductor device 100 according to first embodiment will be described.Here will first illustrate to use
The example of one aspect of semiconductor device 100.Semiconductor device 100 is configured to be arranged on
Circuit on silicon substrate and compound semiconductor substrate, and such as it is integrated into drive installation at car
The solenoid driver of the electromagnetic valve on.Solenoid driver is integrated into and is such as arranged on vehicle
On vehicle-mounted IC in.
Fig. 1 is the car schematically illustrating and incorporating the semiconductor device 100 according to first embodiment
The schematic diagram of example of power train.Vehicle transmission system 1000 includes driving wheel 1001 He
1002, wheel 1003 and 1004, axle 1011 to 1014, variator 1020, differential gear 1031
With 1032, electromotor 1040, clutch 1050, electromagnetic valve 1060 and solenoid driver
1070.Solenoid driver 1070 is configured to such as to be integrated into electronic control unit (ECU).
The various types of electromotors producing driving force are used as electromotor 1040.By electromotor
1040 driving forces produced are transmitted to variator 1020 by clutch 1050.Variator 1020
By differential gear 1031 and axle 1011, driving force is transmitted to driving wheel 1001 and by poor
Driving force is transmitted to driving wheel 1002 by speed gear 1031 and axle 1012.Wheel 1003 passes through axle
1013 interlockings.Wheel 1004 is interlocked by axle 1014.
ECU 1070 is for controlling electromotor 1040 and the device of electromagnetic valve 1060.ECU
1070 include the semiconductor device 100 as solenoid driver IC and control semiconductor device
The pico computer (MCU) 1071 of 100.Semiconductor device 100 is by controlling offer to electromagnetism
The electric current of valve 1060 and control the opened/closed of electromagnetic valve 1060.In this example, clutch
The position of device 1050 can be changed by opened/closed electromagnetic valve 1060.I.e. semiconductor device 100
Can control from electromotor 1040 to variator by controlling the opened/closed of electromagnetic valve 1060
The transmission of the driving force of 1020.
Will be described below semiconductor device 100.Fig. 2 is to schematically illustrate according to first embodiment
The block diagram of structure of semiconductor device 100.Semiconductor device 100 includes control circuit 1, defeated
Go out drive circuit 2, current occuring circuit 3 and current detection circuit 4.
Control circuit 1 is provided with from device side power supply VCC's (the also referred to as first power supply)
Electric power.Control circuit 1 is believed according to the Digital Detecting of the testing result as current detection circuit 4
Number IFB, utilizes control signal CON1 and CON2 to control output driving circuit 2, Yi Jili
Current occuring circuit 3 is controlled by control signal CON3.Specifically, control circuit 1 is configured to
According to digital detection signal IFB control from the output electric current Iout's of output driving circuit 2 output
Value and the value of the reference current Iref from current occuring circuit 3 output.
Fig. 3 is the weight of the structure of the output driving circuit 2 schematically illustrating semiconductor device 100
Want the circuit diagram of part.Output electric current Iout is passed through lead-out terminal OUT by output driving circuit 2
Export the solenoid 101 to the electromagnetic valve being arranged on vehicle.In this example, solenoid 101
It is connected between lead-out terminal OUT and dynamical system earth terminal.
Output driving circuit 2 includes high-pressure side driver (HSD) 21, low side driver (LSD)
22 and detection resistor Rs.In this example, high-pressure side driver (HSD) 21 and low
Side driver (LSD) 22 is by NMOS (N-channel metal-oxide semiconductor (MOS)) crystal for pressure
Pipe forms.The drain electrode of the nmos pass transistor constituting HSD 21 is connected to dynamical system power supply Vb
(also referred to as second source).The source electrode of the nmos pass transistor constituting HSD 21 is connected to structure
Become the drain electrode of the nmos pass transistor of LSD 22.Constitute the nmos pass transistor of LSD 22
Source electrode is connected to dynamical system earth terminal PG, dynamical system earth terminal PG and is connected to dynamical system
Ground connection.Control signal CON1 from control circuit 1 inputs to the NMOS constituting HSD 21
The grid of transistor.Control signal CON2 from control circuit 1 inputs to constituting LSD 22
The grid of nmos pass transistor.
HSD 21 and LSD 22 is by the PWM (pulse width modulation) controlled by control circuit 1
It is controlled as complementary ON/OFF (connect ON/ and disconnect OFF).Fig. 4 is to illustrate to connect as HSD 21
Logical and the semiconductor device 100 according to first embodiment time LSD 22 disconnects output drives electricity
The circuit diagram of the electric current of flowing in road 2.When HSD 21 connects and LSD disconnects, electric current exists
Flow on the direction of solenoid 101 defeated from dynamical system power supply Vb in the way of current value increase
Go out.Fig. 5 be illustrate when HSD 21 disconnects and LSD 22 connects according to first embodiment
The circuit diagram of the electric current of flowing in the output driving circuit 2 of semiconductor device 100.As HSD 21
When disconnection and LSD connect, electric current connects upwardly through dynamical system in the side flowing into solenoid 101
Ground end PG exports from dynamical system ground connection in the way of current value reduction.
Fig. 6 is output electric current and the control that the semiconductor device 100 according to first embodiment is described
The curve chart of signal.As described below, control circuit 1 is by monitoring detection resistor Rs two ends
Voltage and monitor the output electric current Iout of output driving circuit 2.Subsequently, control circuit 1 is according to prison
Depending on result, HSD 21 and LSD 22 is performed PWM control, therefore HSD 21 and LSD 22
Complementally turn on/off and export electric current Iout to be controlled as converging on desired value.
Current occuring circuit 3 is provided with the electric power from device side power supply VCC.Electric current occurs
Circuit 3 would correspond to be exported to electric current inspection by the reference current Iref of control circuit 1 controlling value
Slowdown monitoring circuit 4.In the present embodiment, reference current Iref is temperature independent steady state value.
Current detection circuit 4 detects the output electric current Iout of output driving circuit 2 and detection is tied
Fruit output is to control circuit 1.Current detection circuit 4 includes amplifying unit 41, A/D converter
42, detection resistor Rs and reference resistor Rref.One end of detection resistor Rs connects
The drain electrode extremely constituting the nmos pass transistor of HSD 21 and the NMOS constituting LSD 22 are brilliant
The source electrode of body pipe.The other end of detection resistor Rs is connected to the outfan of semiconductor device 100
OUT.The terminal SP of amplifying unit 41 is connected to detect the high pressure side of resistor Rs (i.e.
The end of HSD 21 and LSD 22 side).The terminal SM of amplifying unit 41 is connected to detection electricity
The low pressure side (i.e. the end of outfan side) of resistance device Rs.Therefore, amplifying unit 41 exports
The analog detection signal produced by the voltage between amplification detection resistor Rs two ends
VDET。
Reference resistor Rref be connected to current occuring circuit 3 and device side earth terminal GND it
Between.Reference current Iref from current occuring circuit 3 flows through reference resistor Rref, therefore
Reference voltage Vref occurs in the high pressure side of reference resistor Rref.A/D converter 42 is joined
Examine the reference voltage Vref as reference and analog detection signal VDET is performed A/D conversion.A/D
Conversion digital detection signal IFB exports to control circuit 1.
Will be described below the operation of semiconductor device 100.Fig. 7 is to illustrate according to first embodiment
The curve chart of temperature characterisitic of amplifying unit 41 of semiconductor device 100.As shown in Figure 7,
In case the temperature increases, the resistance of detection resistor Rs is relative to identical value (in Fig. 7
Ic) output electric current increases.Therefore, from the analog detection signal VDET of amplifying unit 41 output
Also increase.That is, amplifying unit 41 has positive temperature characterisitic.
Fig. 8 is the A/D converter 42 that the semiconductor device 100 according to first embodiment is described
The curve chart of temperature characterisitic.As shown in Figure 8, in case the temperature increases, with reference to electricity
The resistance (Ic in Fig. 7) of resistance device Rref increases, and therefore refers to voltage Vref and also increases.As
Upper described, A/D converter 42 performs A/D conversion with reference to the reference voltage Vref as reference.
Therefore, in this case, digital detection signal IFB is relative to identical value (Vc in Fig. 8)
Analog detection signal VDET reduce.That is, A/D converter 42 has negative temperature characteristic.
Fig. 9 is the digital detection signal IFB that the semiconductor device 100 according to first embodiment is described
The curve chart of example of temperature characterisitic.As it has been described above, because amplifying unit 41 and A/D is changed
Device 42 has reciprocal temperature characterisitic (its symbol is different from each other), therefore can offset its temperature
Degree characteristic.Therefore, the temperature characterisitic that occur can be mitigated or eliminated in digital detection signal IFB.
As it has been described above, according to this structure, the change of the output electric current in the case of temperature changes
Can be avoided by the temperature characterisitic of suppression digital detection signal IFB.Accordingly, it is capable to avoid such as
The vehicle of the degeneration of ride quality that shifting shock in vehicle increases or associates with variations in temperature can
The change of control property.
In this structure, it is desirable to detection resistor Rs and reference resistor Rref are mutually similar
The resistor of type is to be accurately mitigated or eliminated in digital detection signal IFB the variations in temperature occurred.
Consequently, because the absolute value of the rate of change (gradient) of the temperature characterisitic of amplifying unit 41 can be made
And the absolute value of the rate of change (gradient) of the temperature characterisitic of A/D converter 42 is close, because of
This can expect two characteristics accurately offsetting in wide temperature range.
In addition, it would be desired to detection resistor Rs and reference resistor Rref set as closely as possible
Put in semiconductor device 100, or be preferably disposed adjacent to each other.Consequently, because identical temperature
Degree change can apply to detecting resistor Rs and reference resistor Rref, therefore can expect accurately
Offset two characteristics in wide temperature range.Figure 10 be schematically illustrate detection resistor Rs with
And the plane graph of the example of the layout of reference resistor Rref.Each blockage in Figure 10 represents
Resistor element R.Detection resistor Rs and reference resistor Rref are all parallel by connecting
Multiple resistor R construct.Resistor R is for example formed as the polysilicon formed in Semiconductor substrate
Resistor.In this example, detection resistor Rs is configured to wide area and the resistor of low-resistance,
Thus cause the value of the output electric current Iout flowing through detection resistor Rs to be reduced to the least.Cause
This, constitute the quantity of resistor element R of detection resistor Rs more than constituting reference resistor
The quantity of the resistor element R of Rref.Therefore, as shown in Figure 10, can be such as by joining
Examine resistor Rref be set to by detection resistor Rs around, and homogenizing apply to detecting resistor
Rs and the variations in temperature of reference resistor Rref.Accordingly, it is capable to accurately offset in wide temperature range
Amplifying unit 41 and the temperature characterisitic of A/D converter 42.
Notice, the detection resistor Rs shown in Figure 10 and the cloth of reference resistor Rref
Office is exemplary only.Such as, the resistor element R constituting reference resistor Rref is divided into
Many groups and with many groups of the array format scattering device of resistor element R.
Second embodiment
Semiconductor device 200 according to the second embodiment will be described.Figure 11 is to schematically illustrate root
The block diagram of structure according to the semiconductor device 200 of the second embodiment.Semiconductor device 200 has
The structure that wherein current occuring circuit 3 of semiconductor device 100 substitutes with current occuring circuit 5.
Current occuring circuit 5 includes temperature characterisitic adjustment unit 51 and current value adjustment unit
52.Temperature characterisitic adjustment unit 51 is ginseng according to control signal CON3 from control circuit 1
Examine electric current Iref and temperature characterisitic is provided.Current value adjustment unit 52 passes through temperature in its temperature characterisitic
Characteristic adjustment unit 51 adjusts the value of reference current Iref after adjusting.Because semiconductor device 200
Other structures identical with semiconductor device 100, therefore will the description thereof will be omitted.
As described in the first embodiment, although amplifying unit 41 and the temperature of A/D converter 42
Characteristic cancels each other out, but in amplifying unit 41 and the change of the temperature characterisitic of A/D converter
When speed (gradient) is different from each other, temperature characterisitic can be retained in digital detection signal IFB.
Semiconductor device 200 can accurately offset amplifying unit 41 and the temperature characterisitic of A/D converter 42
And by providing temperature characterisitic to eliminate the temperature of digital detection signal IFB for reference current Iref
Characteristic.
Will be described below the operation of semiconductor device 200.Figure 12 is to illustrate to correct according to second in fact
Execute the flow chart of the process of temperature characterisitic in the semiconductor device 200 of example.Such as, partly leading
Before body device 200 is integrated into system, the correction of temperature characterisitic performs to set (such as initial
Pre-shipment tunes).
Step S1: initially set
First, in initial setting, when providing the preparation of temperature characterisitic for reference current Iref,
When exporting electric current Iout and being maintained at steady state value, temperature is measured in the environment of changing wherein
The temperature characterisitic of the digital detection signal IFB of A/D converter 42.In this case, electric current
Circuit 5 is occurred to control reference current Iref so that its value to remain constant (Iref0 in Figure 13).
Therefore, the temperature characterisitic retained in digital detection signal IFB can be obtained.Figure 13 is that basis is described
The schematic diagram of the temperature characterisitic of the digital detection signal IFB in the initial measurement of the second embodiment.
In this example, as shown in Figure 13, the temperature characterisitic of digital detection signal IFB has positive temperature
Degree characteristic.
Step S2: the adjustment of the change of temperature characterisitic
Subsequently, the temperature characterisitic adjustment unit 51 of current occuring circuit 5 corrects reference current Iref
Temperature characterisitic, therefore refer to electric current Iref and there is the temperature identical with digital detection signal IFB
Characteristic.Figure 14 is the curve chart of the adjustment of the change that the temperature characterisitic in step S2 and S3 is described.
Specifically, perform to adjust so that the variations in temperature (gradient) of reference current Iref and Digital Detecting
The variations in temperature (gradient) of signal IFB (Iref in Figure 14) is identical.
Step S3: the adjustment of the absolute value of temperature characterisitic
Subsequently, the current value adjustment unit 52 of current occuring circuit 5 corrects reference current Iref's
The absolute value of temperature characterisitic.Represent the line (or curve) of the temperature characterisitic of reference current Iref
Position shifts due to the correction of said temperature characteristic.Therefore, the temperature of reference current Iref is special
Property is by upper shifting or moves down and is corrected, to cause reference current Iref's under reference temperature
The absolute value of temperature characterisitic is predetermined value.
Therefore, the temperature characterisitic being retained in digital detection signal IFB can be eliminated, therefore can keep away
Exempt from the change of the value of the digital detection signal IFB caused due to temperature.
Notice, cause based on digital detection signal IFB when compensating digital detection signal IFB
Difference between the output current value and the actual output current value that are identified by control circuit 1.Figure
15 is to illustrate to be identified by the control circuit 1 of the semiconductor device 200 according to the second embodiment
The curve chart of the example of the difference between output current value Irec and actual output current value Iact.
As shown in Figure 15, control circuit 1 the output current value Irec identified and actual output current
Iact is inconsistent for value.Noticing, actual output current value Iact described here represents the most logical
Cross the output current value of the actual measurement of the measurement apparatus outside semiconductor device 200.
The output current value Irec that control circuit 1 identifies based on control circuit 1 and actual output electricity
Difference between flow valuve Iact and the change of output current value Irec that control circuit 1 identified is adjusted
Whole is consistent with the change of actual output current value Iact.Specifically, control circuit 1 is from outside
Measurement apparatus etc. receive the measurement result of actual output current value, and calculate real according to measurement result
The change of border output current value Iact.Subsequently, control circuit 1 calculates and identifies with control circuit 1
The coefficient that is multiplied of output current value Irec so that the output current value Irec that control circuit 1 identifies
Change consistent with the change of actual output current value Iact.Therefore, control circuit 1 identifies
The change of output current value Irec is multiplied by by output current value Irec control circuit 1 identified
Calculate coefficient (Gain tuning) and consistent with the change of actual output current value Iact.Hereafter,
Adjust the absolute value of the output current value Irec that control circuit 1 identifies so that control circuit 1 identifies
Output current value Irec consistent with actual output current value Iact (skew adjust).
According to said process, in semiconductor device 200, counteract what control circuit 1 identified
Difference between output current value Irec and actual output current value Iact.Therefore, quasiconductor dress
Put the 200 exportable electric currents with designated value.
3rd embodiment
Semiconductor device 300 according to the 3rd embodiment will be described.Figure 16 is to schematically illustrate root
The block diagram of structure according to the semiconductor device 300 of the 3rd embodiment.Semiconductor device 300 has
Wherein current occuring circuit 3 and current detection circuit 4 are respectively by current occuring circuit 6 and electric current
The structure that testing circuit 7 substitutes.
Current occuring circuit 6 is not only by reference current Iref but also by electric current Imeas (referred to as
One electric current) export to current detection circuit 7.Noticing, current occuring circuit 6 includes that temperature is special
Property adjustment unit 61 and current value adjustment unit 62.Temperature characterisitic adjustment unit 61 and electricity
Flow valuve adjustment unit 62 corresponds respectively to the temperature characterisitic adjustment unit 51 of current occuring circuit 5
And current value adjustment unit 52.In current occuring circuit 6, temperature characterisitic adjustment unit 61
It is configured to control the change of the temperature characterisitic of reference current Iref and electric current Imeas.Electric current adjusts
Unit 62 is configured to after the change of temperature characterisitic adjusts control reference current Iref and electric current
The absolute value of Imeas.
Figure 17 is the amplifying unit schematically illustrating the semiconductor device 300 according to the 3rd embodiment
The structure of 71.Current detection circuit 7 have the amplifying unit 41 of wherein current detection circuit 4 by
The structure that amplifying unit 71 substitutes.Amplifying unit 71 includes current mirror 72 to 74, operation amplifier
Device 75, nmos pass transistor NM and resistor R1 to R5.Hereinafter, resistor R5 is also
It is referred to as the second resistor.Resistor R1 is also referred to as the second resistor.Current mirror 74 also referred to as the
One current mirror.Current mirror 72 also referred to as the second current mirror.Current mirror 73 also referred to as the 3rd electric current
Mirror.
The outfan of operational amplifier 75 is connected to the grid of nmos pass transistor NM and (controls
Terminal).The drain electrode of nmos pass transistor NM is connected to current mirror 74.Current mirror 74 is connected to
Outfan TOUT and be connected to device side earth terminal GND by resistor R5.Current mirror 74
It is provided with the electric power from power supply VCC, doubles to flow through the electric current of nmos pass transistor NM
And by double current output to resistor R5.Therefore, the electricity of the end, high-pressure side of resistor R5
Press and export as analog detection signal VDET from outfan TOUT.
The non-inverting input (the also referred to as first input) of operational amplifier 75 is connected to resistor
R1.Resistor R2 is connected between resistor R1 and terminal SP.Operational amplifier 75 anti-
Phase input (the also referred to as second input) is connected to resistor R3 and nmos pass transistor NM
Source electrode.
Current mirror 72 is provided with from the electric power of power supply VCC and doubles from current occuring circuit
The electric current Imeas of 6 outputs.Current mirror 73 is provided with the electric power from power train side power supply Vb
And double this double current Imeas further.The electric current of request is passed through resistor by current mirror 73
R2 exports to terminal SP as electric current Ioff.
In amplifying unit 71, because electric current Ioff flows through resistor R2, therefore produce skew
Voltage Voff.Therefore, compensate for the input offset of operational amplifier 75.Because resistor R2
Have and be similar to detect resistor Rs and the positive temperature characterisitic of reference resistor Rref, the most partially
Move voltage Voff to change with temperature and increase.Therefore, from the analog detection of amplifying unit 71 output
The value of signal VDET changes when current detection circuit 7 does not export.Therefore, in this enforcement
In example, by the value of steady drift voltage Voff for electric current Ioff offer temperature characterisitic.
Specifically, temperature characterisitic adjustment unit 61 for electric current Imeas provide negative temperature characteristic and with
After current value adjustment unit 62 adjusts the absolute value of electric current Imeas, and therefore electric current Imeas possesses
Predetermined negative temperature characteristic.Therefore, the electric current Ioff produced by double current Imeas is also had
There is predetermined negative temperature characteristic.
That is, the value of Ioff reduces when the resistance of resistor R2 increases with temperature increase.Therefore,
According to this structure, it is ensured that provide the temperature characterisitic of the offset voltage Voff to operational amplifier 75
And value can remain constant.Therefore, it is to avoid when current detection circuit 7 does not export from amplification
The value change of the analog detection signal VDET of unit 71 output.
4th embodiment
Semiconductor device 400 according to the 4th embodiment will be described.Semiconductor device 400 is root
Alternative forms according to the semiconductor device 300 of the 3rd embodiment.Figure 18 is to schematically illustrate basis
The block diagram of the structure of the semiconductor device 400 of the 4th embodiment.Semiconductor device 400 has it
The structure that middle current detection circuit 7 is substituted by current detection circuit 8.Outfan OUT passes through spiral shell
Spool 101 is connected to power train power supply Vb.
Figure 19 is that the output schematically illustrating the semiconductor device 400 according to the 4th embodiment drives
The circuit diagram of the major part of the structure of circuit 2.In the present embodiment, because outfan OUT
Being connected to power train power supply Vb by solenoid 101, therefore output sense of current is relative to the
One to the 3rd embodiment is reverse.When HSD 21 disconnects and LSD 22 connects, output electric current from
External impetus system power supply Vb passes through outfan OUT and dynamical system earth terminal PG with electricity
The mode that flow valuve increases flows in dynamical system power supply.
Because the sense of current is reverse, such as, at the current detection circuit 7 using the 3rd embodiment
In the case of, the therefore polarity inversion of operational amplifier and normal amplifieroperation can not be performed.
Therefore, in the present embodiment, current detection circuit 8 is configured to no matter exporting electric current Iout
Direction how in the case of perform normal amplifieroperation.Figure 20 is to schematically illustrate according to
The circuit diagram of the structure of the amplifying unit 81 of the semiconductor device 400 of four embodiments.Current detecting
Circuit 8 has and wherein switch element 82 is added the current detection circuit 7 according to the 3rd embodiment
Structure.
Switch element 82 includes switching SW1 to SW4, and (these are also referred to as first to fourth
Switch) and between switch insertion terminal SP, SM and operational amplifier 75.Switch SW1 inserts
Enter between terminal SP and resistor R2, or terminal SP and operational amplifier 75 is noninverting
Between terminal.Switch SW2 inserts between terminal SP and resistor R4, or terminal SP and
Between the end of oppisite phase of operational amplifier 75.Switch SW3 insert terminal SM and resistor R4 it
Between, or between the end of oppisite phase of terminal SM and operational amplifier 75.Switch SW4 inserts terminal
Between SM and resistor R2, or between the non-oppisite phase end of terminal SM and operational amplifier 75.
Switch SW1 and SW3 is such as configured to complementally open relative to switch SW2 and SW4
Road/Guan Bi.In the present embodiment, as shown in Figure 20, switch SW2 and SW4 closes and opens
Close SW1 and SW3 open circuit.Therefore, the high pressure side of detection resistor Rs is connected to computing and puts
The non-oppisite phase end of big device 75 and the low pressure side of detection resistor Rs are connected to operational amplifier 75
End of oppisite phase.Therefore, normal amplifieroperation can be performed.
On the other hand, semiconductor device 100,200 and is stated when current detection circuit 8 application first
When 300, switch SW2 and SW4 open circuit and switch SW1 and SW3 Guan Bi.Therefore, detection
The high pressure side of resistor Rs is connected to end of oppisite phase and the detection resistor Rs of operational amplifier 75
Low pressure side be connected to the non-oppisite phase end of operational amplifier 75.Therefore can perform to amplify normally
Operation.
As it has been described above, according to this structure, be provided that semiconductor device, no matter it exports electric current Iout
Direction how can not produce the offset voltage of input offset of compensated operational amplifier, and not
How pipe variations in temperature can keep offset voltage constant.
Other embodiments
The invention is not restricted to above-described embodiment, and suitably can change in the case of without departing from its spirit
Become.Such as, in the case of the second embodiment, it is recognized that reference current Iref can possess
Temperature characterisitic in 3rd embodiment and the 4th embodiment.
In the case of the 4th embodiment, it is recognized that solenoid 101 is connected to first and
Between outfan OUT and dynamical system power supply Vb in two embodiments.
The structure of above-mentioned output driving circuit 2 is only example.It will thus be appreciated that can apply
Other structures of output electric current can be provided for solenoid 101.
The all or part nmos pass transistor used in above-described embodiment can be suitably brilliant by PMOS
Body pipe or other kinds of transistor are replaced.
Although having been based on the present invention of the present inventor's proposition that embodiment is described in detail, but
The invention is not restricted to above-described embodiment, and various changing can be carried out in the case of without departing from its spirit
Become.
Those skilled in the art can combine first to fourth embodiment as required.
Although illustrating the present invention according to some embodiment, but those skilled in the art will
Recognize and can implement with various modified examples in the spirit and scope of appended claims, and this
Bright it is not limited to examples detailed above.
And, the scope of claim is not limited by above-described embodiment.
Furthermore, it is noted that, applicant is intended to the equivalency range of all authority requirement key element,
Even if modifying after in course of litigation.
Claims (12)
1. a semiconductor device, including:
It is configured to export to be integrated in vehicle solenoidal by output electric current by lead-out terminal
Output driving circuit；
The detection resistor being connected between described lead-out terminal and described output driving circuit；
It is configured to output produced by the voltage between the two ends of the described detection resistor of amplification
The amplifying unit of analog detection signal；
It is configured to export the current occuring circuit of reference current；
It is connected between described current occuring circuit and earth terminal and is configured to according to described with reference to electricity
The reference resistor of stream output reference voltage；
It is configured to utilize described reference voltage as with reference to described analog detection signal is converted into number
The A/D converter of word detection signal；And
It is configured to the institute exported according to the control of described digital detection signal from described output driving circuit
State the control circuit of output electric current.
Semiconductor device the most according to claim 1, wherein said detection resistor is provided to
Adjacent to described reference resistor.
Semiconductor device the most according to claim 2, wherein
Described detection resistor and described reference resistor each by multiple resistor elements
Composition, and
The multiple described resistor element constituting described reference resistor is provided as by constituting described
Detection resistor multiple described resistor element around.
Semiconductor device the most according to claim 2, wherein said current occuring circuit is described
Reference current provides temperature characterisitic, and it changes and at described reference current and described output electric current
Keep the temperature characterisitic of described digital detection signal measured under constant state identical.
Semiconductor device the most according to claim 4, wherein said control circuit adjusts described number
The gain of word detection signal and skew, to cause the measured value of externally measured described output electric current
Consistent with the value of the described output electric current represented by described digital detection signal.
Semiconductor device the most according to claim 5, wherein
Described amplifying unit includes:
Operational amplifier；And
It is connected to the first resistance between one end of described detection resistor and the first input
Device, described first input is an input of described operational amplifier,
Described current occuring circuit is described the of described first resistor and described operational amplifier
Node between one input provides the first electric current,
The second input as another input of described operational amplifier is connected to described detection resistance
The other end of device, and
Described amplifying unit signal based on the output from described operational amplifier and export described
Analog detection signal.
Semiconductor device the most according to claim 5, wherein
Described amplifying unit includes:
Transistor, the control terminal of described transistor is connected to the institute of described operational amplifier
Stating output, one end of described transistor is connected to described second input of described operational amplifier；
Second resistor, one end of described second resistor is connected to described earth terminal；With
And
It is configured to electric current is exported the other end to described second resistor and described crystal
First current mirror of the other end of pipe, and
The voltage of one end of the described first current mirror side of described second resistor is output as
Described analog detection signal.
Semiconductor device the most according to claim 7, wherein
Described amplifying unit includes:
It is configured to be provided with from the electric power of the first power supply and doubles to send out from described electric current
Second current mirror of described first electric current of raw circuit；And
It is configured to be provided with the electricity from the second source being different from described first power supply
Power, is doubled the electric current doubled by described second current mirror, and exports supreme by the electric current doubled
State the 3rd electricity of node between described first input of the first resistor and described operational amplifier
Stream mirror,
Described output driving circuit and described operational amplifier are provided with from described second electricity
The electric power in source, and
Described current occuring circuit, described control circuit, described A/D converter and described
One current mirror is provided with the electric power from described first power supply.
Semiconductor device the most according to claim 8, wherein
Described amplifying unit includes:
The first terminal between one end and described first resistor of described detection resistor；
The other end of described detection resistor and described second input of described operational amplifier
Between the second terminal；
The first switch being inserted between described the first terminal and described first resistor；
It is connected between described the first terminal and described second input of described operational amplifier
Second switch；
It is connected between described second terminal and described second input of described operational amplifier
The 3rd switch；And
It is inserted in the 4th switch between described second terminal and described first resistor, with
And
Described first switch and described 3rd switch are opened relative to described second switch and the described 4th
Close complementally open circuit/Guan Bi.
Semiconductor device the most according to claim 9, wherein
When described solenoid is connected to the node between described outfan and described earth terminal, institute
State the first switch and described 3rd switch Guan Bi and described second switch and described 4th switch is opened
Road, and
When described solenoid is connected to the node between described outfan and described second source,
Described first switch and described 3rd switch open and described second switch and the described 4th switch and close
Close.
11. 1 kinds of vehicle-mounted valve systems, including:
Including solenoid the electromagnetic valve that is arranged on vehicle；And
It is configured to control described solenoidal solenoid driver, wherein
Described solenoid driver includes:
It is configured to provide the semiconductor device of electric power for described solenoid；And
It is configured to control the pico computer of described semiconductor device,
Described semiconductor device includes:
It is configured to be driven output electric current to described solenoidal output by lead-out terminal output
Galvanic electricity road；
The detection resistance being connected between described lead-out terminal and described output driving circuit
Device；
It is configured to output produced by the voltage between the two ends of the described detection resistor of amplification
The amplifying unit of raw analog detection signal；
It is configured to export the current occuring circuit of reference current；
It is connected between described current occuring circuit and earth terminal and is configured to according to described ginseng
Examine the reference resistor of electric current output reference voltage；
It is configured to utilize described reference voltage as with reference to being changed by described analog detection signal
Become the A/D converter of digital detection signal；And
It is configured to control to export from described output driving circuit according to described digital detection signal
The control circuit of described output electric current.
12. 1 kinds of solenoid drivers, including:
The solenoid being configured to the electromagnetic valve for being arranged on vehicle provides the quasiconductor dress of electric current
Put；And
It is configured to control the pico computer of described semiconductor device, wherein
Described semiconductor device includes:
It is configured to be driven output electric current to described solenoidal output by lead-out terminal output
Galvanic electricity road；
The detection resistance being connected between described lead-out terminal and described output driving circuit
Device；
It is configured to output produced by the voltage between the two ends of the described detection resistor of amplification
The amplifying unit of raw analog detection signal；
It is configured to export the current occuring circuit of reference current；
It is connected between described current occuring circuit and earth terminal and is configured to according to described ginseng
Examine the reference resistor of electric current output reference voltage；
It is configured to utilize described reference voltage as with reference to being changed by described analog detection signal
Become the A/D converter of digital detection signal；And
It is configured to control to export from described output driving circuit according to described digital detection signal
The control circuit of described output electric current.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-079727 | 2015-04-09 | ||
| JP2015079727A JP6614787B2 (en) | 2015-04-09 | 2015-04-09 | Semiconductor device |
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| CN106051267B CN106051267B (en) | 2019-06-28 |
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| CN201610217188.4A Active CN106051267B (en) | 2015-04-09 | 2016-04-08 | Semiconductor device, vehicle-mounted valve system and solenoid driver |
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| Country | Link |
|---|---|
| US (2) | US10176913B2 (en) |
| EP (1) | EP3079161B1 (en) |
| JP (1) | JP6614787B2 (en) |
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| JP6614787B2 (en) * | 2015-04-09 | 2019-12-04 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| JP6667300B2 (en) * | 2016-01-22 | 2020-03-18 | ルネサスエレクトロニクス株式会社 | Current detection circuit and semiconductor device having the same |
| JP6969884B2 (en) * | 2017-04-03 | 2021-11-24 | 新日本無線株式会社 | Current detection amplifier |
| JP6937705B2 (en) | 2018-01-30 | 2021-09-22 | ルネサスエレクトロニクス株式会社 | Semiconductor devices, current detection methods and load drive systems |
| JP7026531B2 (en) * | 2018-02-23 | 2022-02-28 | ルネサスエレクトロニクス株式会社 | Semiconductor devices, semiconductor systems, and control systems |
| JP2019149614A (en) | 2018-02-26 | 2019-09-05 | ルネサスエレクトロニクス株式会社 | Current detection circuit, semiconductor device, and semiconductor system |
| KR20200085071A (en) | 2019-01-04 | 2020-07-14 | 주식회사 엘지화학 | Apparatus and Method for measuring current of battery |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN106051267B (en) | 2019-06-28 |
| JP6614787B2 (en) | 2019-12-04 |
| US20190080830A1 (en) | 2019-03-14 |
| US10910136B2 (en) | 2021-02-02 |
| EP3079161A1 (en) | 2016-10-12 |
| US10176913B2 (en) | 2019-01-08 |
| US20160300653A1 (en) | 2016-10-13 |
| EP3079161B1 (en) | 2021-06-30 |
| JP2016201646A (en) | 2016-12-01 |
| KR102553106B1 (en) | 2023-07-07 |
| KR20160121409A (en) | 2016-10-19 |
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