CN106048728B - 一种生长高品质碳化硅晶须的方法 - Google Patents
一种生长高品质碳化硅晶须的方法 Download PDFInfo
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- CN106048728B CN106048728B CN201610482192.3A CN201610482192A CN106048728B CN 106048728 B CN106048728 B CN 106048728B CN 201610482192 A CN201610482192 A CN 201610482192A CN 106048728 B CN106048728 B CN 106048728B
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- Prior art keywords
- whisker
- silicon carbide
- graphite crucible
- stick
- collecting board
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610482192.3A CN106048728B (zh) | 2016-06-28 | 2016-06-28 | 一种生长高品质碳化硅晶须的方法 |
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CN201610482192.3A CN106048728B (zh) | 2016-06-28 | 2016-06-28 | 一种生长高品质碳化硅晶须的方法 |
Publications (2)
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CN106048728A CN106048728A (zh) | 2016-10-26 |
CN106048728B true CN106048728B (zh) | 2018-06-26 |
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CN201610482192.3A Active CN106048728B (zh) | 2016-06-28 | 2016-06-28 | 一种生长高品质碳化硅晶须的方法 |
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CN (1) | CN106048728B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116288717A (zh) * | 2017-08-12 | 2023-06-23 | 天水佳吉化工有限公司 | 一种纳-微米碳化硅晶须的生产方法 |
CN114481325A (zh) * | 2022-01-29 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | 一种碳化硅多晶的制造装置及方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6801382A (zh) * | 1968-01-31 | 1969-08-04 | ||
US4702901A (en) * | 1986-03-12 | 1987-10-27 | The United States Of America As Represented By The United States Department Of Energy | Process for growing silicon carbide whiskers by undercooling |
CN100415951C (zh) * | 2006-01-17 | 2008-09-03 | 浙江大学 | 一种适合SiC晶须生长的方法 |
CN101402455B (zh) * | 2008-09-22 | 2011-04-06 | 新疆天科合达蓝光半导体有限公司 | 升华法制备碳化硅纳米棒的方法 |
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2016
- 2016-06-28 CN CN201610482192.3A patent/CN106048728B/zh active Active
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Effective date of registration: 20190320 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250118 the middle part of Mei Li Lake, Huaiyin District, Ji'nan, Shandong Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
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CP03 | Change of name, title or address | ||
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 Shandong city of Ji'nan province high tech Zone Xinyu Road on the west side of century wealth center AB block 1106-6-01 Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |