CN106033726B - 场效应晶体管的制作方法 - Google Patents
场效应晶体管的制作方法 Download PDFInfo
- Publication number
- CN106033726B CN106033726B CN201510104438.9A CN201510104438A CN106033726B CN 106033726 B CN106033726 B CN 106033726B CN 201510104438 A CN201510104438 A CN 201510104438A CN 106033726 B CN106033726 B CN 106033726B
- Authority
- CN
- China
- Prior art keywords
- polysilicon layer
- field effect
- effect transistor
- production method
- substrat structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 title claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229920005591 polysilicon Polymers 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000007943 implant Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510104438.9A CN106033726B (zh) | 2015-03-10 | 2015-03-10 | 场效应晶体管的制作方法 |
PCT/CN2016/072470 WO2016141784A1 (zh) | 2015-03-10 | 2016-01-28 | 场效应晶体管的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510104438.9A CN106033726B (zh) | 2015-03-10 | 2015-03-10 | 场效应晶体管的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106033726A CN106033726A (zh) | 2016-10-19 |
CN106033726B true CN106033726B (zh) | 2019-06-07 |
Family
ID=56879910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510104438.9A Active CN106033726B (zh) | 2015-03-10 | 2015-03-10 | 场效应晶体管的制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106033726B (zh) |
WO (1) | WO2016141784A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108878275A (zh) * | 2017-05-10 | 2018-11-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5888887A (en) * | 1997-12-15 | 1999-03-30 | Chartered Semiconductor Manufacturing, Ltd. | Trenchless buried contact process technology |
US6465315B1 (en) * | 2000-01-03 | 2002-10-15 | Advanced Micro Devices, Inc. | MOS transistor with local channel compensation implant |
CN101431103A (zh) * | 2007-11-07 | 2009-05-13 | 冲电气工业株式会社 | 半导体元件及其制造方法 |
CN102184871A (zh) * | 2011-05-31 | 2011-09-14 | 上海先进半导体制造股份有限公司 | 基于标准cmos工艺的高压横向双扩散nmos的制作方法 |
CN104051498A (zh) * | 2013-03-14 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 具有阶梯氧化物的金属氧化物半导体场效应晶体管 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054675B (zh) * | 2009-11-02 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 偏移侧墙及mos晶体管的形成方法 |
US8114725B1 (en) * | 2010-10-28 | 2012-02-14 | Richtek Technology Corporation | Method of manufacturing MOS device having lightly doped drain structure |
-
2015
- 2015-03-10 CN CN201510104438.9A patent/CN106033726B/zh active Active
-
2016
- 2016-01-28 WO PCT/CN2016/072470 patent/WO2016141784A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5888887A (en) * | 1997-12-15 | 1999-03-30 | Chartered Semiconductor Manufacturing, Ltd. | Trenchless buried contact process technology |
US6465315B1 (en) * | 2000-01-03 | 2002-10-15 | Advanced Micro Devices, Inc. | MOS transistor with local channel compensation implant |
CN101431103A (zh) * | 2007-11-07 | 2009-05-13 | 冲电气工业株式会社 | 半导体元件及其制造方法 |
CN102184871A (zh) * | 2011-05-31 | 2011-09-14 | 上海先进半导体制造股份有限公司 | 基于标准cmos工艺的高压横向双扩散nmos的制作方法 |
CN104051498A (zh) * | 2013-03-14 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 具有阶梯氧化物的金属氧化物半导体场效应晶体管 |
Also Published As
Publication number | Publication date |
---|---|
CN106033726A (zh) | 2016-10-19 |
WO2016141784A1 (zh) | 2016-09-15 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170519 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi CSMC Semiconductor Co., Ltd. Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170927 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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GR01 | Patent grant | ||
GR01 | Patent grant |