CN106033707A - Preparation method for polysilicon film - Google Patents
Preparation method for polysilicon film Download PDFInfo
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- CN106033707A CN106033707A CN201510106473.4A CN201510106473A CN106033707A CN 106033707 A CN106033707 A CN 106033707A CN 201510106473 A CN201510106473 A CN 201510106473A CN 106033707 A CN106033707 A CN 106033707A
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- film
- amorphous silicon
- preparation
- polysilicon film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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Abstract
The invention, which belongs to the technical field of the semiconductor, relates to a preparation method for a polysilicon film. The method comprises: a micro lens group is used for carrying out single exposure and development to localize a grain; and excimer laser is focused by the micro lens group and a focal point approaches a positioning position, thereby forming the grain. With the method, the carrier mobility of a polysilicon thin-film transistor can be improved during the polysilicon film preparation process and the overall performances of the polysilicon thin-film transistor can be enhanced. Moreover, the preparation method can be implemented easily and the realization cost is low.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to polysilicon film preparation method technical field, specifically
Refer to a kind of polysilicon film preparation method controlling grain size.
Background technology
Active matrix liquid crystal display device major part is using amorphous silicon film transistor as pixel switch at present.
Due to irregular alignment and too much uncombined key between silicon atom, cause with amorphous silicon film when the electricity as material
The electrical characteristics of sub-component cannot effectively promote all the time.
In order to make liquid crystal display reach higher image quality, use the TFT of LTPS LCD than a-Si's
TFT is less, and the brightness of light openings rate and screen can dramatically increase, and can be integrated by drive circuit
On substrate, owing to external connection number and substrate area can reduce, it is possible to extremely low one-tenth carried originally
Rise the durability of total system.
Determining that the most critical issue of thin film transistor (TFT) electrical characteristics quality is active layers, silicon fiml crystallinity is to carrier
Mobility has direct affects relation.In order to solve to stride across repeatedly crystal grain boundary when carrier moves
Puzzlement, many research units have developed many solution and constitute the method that carrier moves potential barrier.Polysilicon membrane is brilliant
Although body pipe has the carrier mobility that more amorphous silicon thin film transistor is high, but also exists in gate channels
Crystal grain boundary, this will cause carrier to be scattered when by gate channels and reduce its mobility, make assembly
Characteristic is deteriorated, and solves the size that the simplest method of this problem is just to increase at gate channels and subtract
Few carrier number of times by crystal boundary.Therefore, the most easily and accurately determine during prepared by polysilicon film
The size of crystal grain becomes the art problem demanding prompt solution.
Summary of the invention
It is an object of the invention to overcome above-mentioned shortcoming of the prior art, it is provided that it is thin that one can improve polysilicon
The carrier mobility of film transistor, promotes the overall performance of polycrystalline SiTFT, and implementation is simple,
Realize polysilicon film preparation method with low cost.
In order to realize above-mentioned purpose, the polysilicon film preparation method of the present invention comprises the following steps:
(1) on substrate, one layer of SiON with absorptance is depositedxThin film；
(2) at described SiONxOne layer of SiO is deposited on thin film2Cover layer is as amorphous silicon film；
(3) utilize lenticule group that described amorphous silicon film is carried out single exposure development, at described non-crystalline silicon
Die locations is determined on film；
(4) utilize excimer laser to pass through lenticule group to focus on, and make focus close to the crystalline substance of described amorphous silicon film
Grain position, makes the amorphous silicon film at irradiation melt and produce crystal grain, as location crystal seed.
In this polysilicon film preparation method, described lenticule group is fused silica microlens.
In this polysilicon film preparation method, described step (1) specially utilizes plasma enhanced chemical gas
Phase deposition process deposits one layer of SiONx thin film with absorptance on substrate.
Have employed the polysilicon film preparation method of the control grain size of this invention, it enters first with lenticule group
Row single exposure development location crystal grain, and then utilize excimer laser to pass through the focusing of lenticule group, and make focus
Close to position location, form crystal grain.Utilize the method can improve polysilicon in polysilicon film preparation process thin
The carrier mobility of film transistor, promotes the overall performance of polycrystalline SiTFT, and the polycrystalline of the present invention
Silicon fiml preparation method, its implementation is simple, it is achieved with low cost.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps of the polysilicon film preparation method of the present invention.
Fig. 2 be the present invention polysilicon film preparation method in utilize single exposure development location crystal grain schematic diagram.
Fig. 3 be the present invention polysilicon film preparation method in excimer laser through lenticule group irradiate formed crystalline substance
The schematic diagram of grain.
Detailed description of the invention
In order to be more clearly understood that the technology contents of the present invention, describe in detail especially exemplified by following example.
Refer to shown in Fig. 1, for the flow chart of steps of the polysilicon film preparation method of the present invention.
In one embodiment, this polysilicon film preparation method comprises the following steps:
(1) on substrate, one layer of SiONx thin film with absorptance is deposited；
(2) on described SiONx thin film, one layer of SiO2 cover layer is deposited as amorphous silicon film；
(3) as in figure 2 it is shown, utilize lenticule group that described amorphous silicon film is carried out single exposure development,
Determine on described amorphous silicon film that die locations, described lenticule group are fused silica microlens；
(4) as it is shown on figure 3, utilize excimer laser to pass through lenticule group and focus on, and make focus close to described
The die locations of amorphous silicon film, makes the amorphous silicon film at irradiation melt and produce crystal grain, as location crystal seed.
In a preferred embodiment, described step (1) specially utilizes PECVD
Deposition process is at lining
One layer of SiONx thin film with absorptance is deposited at the end.
In actual applications, the present invention is in existing polysilicon technology of preparing, adds and utilizes lenticule array
Assisted single-crystal location technology, and utilize single exposure development step to control array position, relend by lenticule number
Group focusing effect goes to reach crystal grain location.
Specifically, the mode first with plasma enhanced chemical vapor deposition (PECVD) deposits one layer
There is SiONx (silicon oxynitride) thin film of absorptance, redeposited one layer of SiO2 (silicon dioxide) conduct
Cover layer (Capping layer) and amorphous silicon film.
When quasi-molecule laser annealing (ELA) is radiated on amorphous silicon film through lenticule array, due to laser
Energy becomes a little via lens focus, so silicon fiml can start to melt and produce the nuclei of crystallization at by laser energy,
These nuclei of crystallization are i.e. location crystal seeds.
Laser irradiates silicon fiml through micro-array, can draw location crystal grain array.
Have employed the polysilicon film preparation method of this invention, it carries out single exposure development first with lenticule group
Location crystal grain, and then utilize excimer laser pass through lenticule group focus on, and make focus close to position location,
Form crystal grain, and effectively control the size of crystal grain.Utilize the method can improve in polysilicon film preparation process
The carrier mobility of polycrystalline SiTFT, promotes the overall performance of polycrystalline SiTFT, and this
Bright polysilicon film preparation method, its implementation is simple, it is achieved with low cost.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that still may be used
So that various modification can be adapted and conversion is without departing from the spirit and scope of the present invention.Therefore, specification and drawings should
It is considered as illustrative and not restrictive.
Claims (3)
1. a polysilicon film preparation method, it is characterised in that described method comprises the following steps:
(1) on substrate, one layer of SiONx thin film with absorptance is deposited；
(2) on described SiONx thin film, one layer of SiO2 cover layer is deposited as amorphous silicon film；
(3) utilize lenticule group that described amorphous silicon film is carried out single exposure development, at described non-crystalline silicon
Die locations is determined on film；
(4) utilize excimer laser to pass through lenticule group to focus on, and make focus close to the crystalline substance of described amorphous silicon film
Grain position, makes the amorphous silicon film at irradiation melt and produce crystal grain, as location crystal seed.
Polysilicon film preparation method the most according to claim 1, it is characterised in that described lenticule
Group is fused silica microlens.
Polysilicon film preparation method the most according to claim 1 and 2, it is characterised in that described step
Suddenly (1) specially utilizes plasma enhanced chemical vapor deposition method to deposit one layer on substrate to have absorption
The SiONx thin film of coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510106473.4A CN106033707A (en) | 2015-03-10 | 2015-03-10 | Preparation method for polysilicon film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510106473.4A CN106033707A (en) | 2015-03-10 | 2015-03-10 | Preparation method for polysilicon film |
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| CN106033707A true CN106033707A (en) | 2016-10-19 |
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| CN201510106473.4A Pending CN106033707A (en) | 2015-03-10 | 2015-03-10 | Preparation method for polysilicon film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328497A (en) * | 2016-10-28 | 2017-01-11 | 昆山国显光电有限公司 | Low-temperature polycrystalline silicon thin film and preparation method thereof and display device |
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| US5821135A (en) * | 1996-10-16 | 1998-10-13 | Xerox Corporation | Methods for and applications of making buried structures in semiconductor thin films |
| CN1517455A (en) * | 2003-01-15 | 2004-08-04 | 友达光电股份有限公司 | Method of laser recrystallization |
| JP2006093212A (en) * | 2004-09-21 | 2006-04-06 | Sumitomo Heavy Ind Ltd | Method of forming polycrystal layer, semiconductor device, and its manufacturing method |
| CN1822334A (en) * | 2005-02-17 | 2006-08-23 | 财团法人工业技术研究院 | Method for producing polycrystalline thin film transistor |
| CN1933104A (en) * | 2005-09-14 | 2007-03-21 | 财团法人工业技术研究院 | Method of semiconductor thin film crystallization and semiconductor device fabrication |
| CN101295679A (en) * | 2007-04-26 | 2008-10-29 | 中华映管股份有限公司 | Method for manufacturing thin-film transistor |
| CN102543997A (en) * | 2008-09-19 | 2012-07-04 | 友达光电股份有限公司 | Thin film transistor array substrate |
| CN103594355A (en) * | 2013-11-13 | 2014-02-19 | 深圳市华星光电技术有限公司 | Method for manufacturing polycrystalline silicon with growth directions controllable |
| CN103762176A (en) * | 2011-08-23 | 2014-04-30 | 广东中显科技有限公司 | Preparation method for polysilicon thin film with bridged crystal-grain structure |
| CN103972050A (en) * | 2014-05-14 | 2014-08-06 | 京东方科技集团股份有限公司 | Preparation method of polycrystalline silicon thin film, polycrystalline silicon thin film transistor and array substrate |
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2015
- 2015-03-10 CN CN201510106473.4A patent/CN106033707A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821135A (en) * | 1996-10-16 | 1998-10-13 | Xerox Corporation | Methods for and applications of making buried structures in semiconductor thin films |
| CN1517455A (en) * | 2003-01-15 | 2004-08-04 | 友达光电股份有限公司 | Method of laser recrystallization |
| JP2006093212A (en) * | 2004-09-21 | 2006-04-06 | Sumitomo Heavy Ind Ltd | Method of forming polycrystal layer, semiconductor device, and its manufacturing method |
| CN1822334A (en) * | 2005-02-17 | 2006-08-23 | 财团法人工业技术研究院 | Method for producing polycrystalline thin film transistor |
| CN1933104A (en) * | 2005-09-14 | 2007-03-21 | 财团法人工业技术研究院 | Method of semiconductor thin film crystallization and semiconductor device fabrication |
| CN101295679A (en) * | 2007-04-26 | 2008-10-29 | 中华映管股份有限公司 | Method for manufacturing thin-film transistor |
| CN102543997A (en) * | 2008-09-19 | 2012-07-04 | 友达光电股份有限公司 | Thin film transistor array substrate |
| CN103762176A (en) * | 2011-08-23 | 2014-04-30 | 广东中显科技有限公司 | Preparation method for polysilicon thin film with bridged crystal-grain structure |
| CN103594355A (en) * | 2013-11-13 | 2014-02-19 | 深圳市华星光电技术有限公司 | Method for manufacturing polycrystalline silicon with growth directions controllable |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328497A (en) * | 2016-10-28 | 2017-01-11 | 昆山国显光电有限公司 | Low-temperature polycrystalline silicon thin film and preparation method thereof and display device |
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Application publication date: 20161019 |