CN106024838B - Display element based on mixing TFT structure - Google Patents
Display element based on mixing TFT structure Download PDFInfo
- Publication number
- CN106024838B CN106024838B CN201610452481.9A CN201610452481A CN106024838B CN 106024838 B CN106024838 B CN 106024838B CN 201610452481 A CN201610452481 A CN 201610452481A CN 106024838 B CN106024838 B CN 106024838B
- Authority
- CN
- China
- Prior art keywords
- layer
- tft
- hole
- grid
- interlayer dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 52
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 270
- 239000011229 interlayer Substances 0.000 claims description 65
- 238000002161 passivation Methods 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 9
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of display element based on mixing TFT structure, pass through the Optimal Structure Designing to mixing TFT structure, capacitor plate is set to above or below metal oxide TFT, it oxidizes metal and forms capacitor between the grid and capacitor plate of object TFT, it realizes and reduces processing procedure road number, reduce production cost；It is fast by being utilized respectively silicon substrate TFT switch speed, and driving current it is big advantage and metal oxide TFT homogeneity it is good, and the advantage that leakage current is small, when the display element based on mixing TFT structure is applied to OLED display, it can be improved the switching speed of switch TFT, and promote the homogeneity of OLED display, when the display element based on mixing TFT structure is applied to LCD display device, the driving current of TFT in LCD gate driving circuit can be improved, and reduce the leakage current when driving of LCD display pixel, and in peripheral drive circuit TFT leakage current.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of display elements based on mixing TFT structure.
Background technique
With the development of display technology, liquid crystal display (Liquid Crystal Display, LCD) and organic light emission two
The flat display apparatus such as pole pipe display (Organic Light Emitting Diode, OLED) because have high image quality, power saving,
The advantages that fuselage is thin and has a wide range of application, and it is widely used in mobile phone, TV, personal digital assistant, digital camera, notes
The various consumer electrical products such as this computer, desktop computer, become the mainstream in display device.
The working principle of liquid crystal display panel is in thin-film transistor array base-plate (Thin Film Transistor
Array Substrate, TFT Array Substrate) with colored filter substrate (Color Filter, CF) between pour into
Liquid crystal molecule, and apply driving voltage to control the direction of rotation of liquid crystal molecule, by backlight module on two plate bases
The light refraction of (backlight module), which comes out, generates picture.
OLED display device belongs to emissive type and shows equipment, generally includes to be used separately as anode, the first picture with cathode
Plain electrode and public electrode and the organic luminous layer being located between the first pixel electrode and public electrode, luminescence mechanism are
Under certain voltage driving, organic luminous layer is injected from cathode and anode respectively and moved to electrons and holes, and in organic hair
It meets in photosphere, form exciton and excites light emitting molecule, the latter issues visible light by radiative relaxation.OLED is according to driving
Mode can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active array type OLED (Active
Matrix OLED, AMOLED) two major classes, i.e. directly addressing and film transistor matrix two classes of addressing.Wherein, AMOLED has
In the pixel that array is arranged, belong to active display type, luminous efficacy is high, is typically used as large scale display dress high-definition
It sets.
Thin film transistor (TFT) (Thin Film Transistor, TFT) is in AMOLED display device and LCD display device
Main driving element is directly related to the developing direction of high performance flat display device.Thin film transistor (TFT) used in display device needs
Consider various factors such as homogeneity, leakage current, effective drive length, area efficiency and hysteresis.According to active layer
The difference of material, thin film transistor (TFT) are divided into amorphous silicon film transistor (a-Si TFT), low temperature polycrystalline silicon (Low
Temperature Poly-silicon, LTPS) thin film transistor (TFT) and metal oxide (metal oxide) thin film transistor (TFT).
Wherein amorphous silicon film transistor and low-temperature polysilicon film transistor are silicon-based film transistor, have switching speed fast and drive
The big advantage of streaming current can be used for the driving of OLED display pixel and LCD gate driving；And metal oxide thin-film transistor has
The advantage that homogeneity is good and leakage current is low can be used for the driving of OLED display pixel and the driving of LCD display pixel and peripheral driver
Circuit.
Summary of the invention
The purpose of the present invention is to provide a kind of display elements based on mixing TFT structure, by mixing TFT structure
Optimal Structure Designing is realized and reduces processing procedure road number, and production cost is reduced.
Another object of the present invention is to provide a kind of display elements based on mixing TFT structure, and OLED can be improved and show
The switching speed of the switch TFT of device, and the homogeneity of OLED display is promoted, TFT in LCD gate driving circuit can be improved
Driving current, and reduce LCD display pixel driving when leakage current and peripheral drive circuit in TFT leakage current.
To achieve the above object, present invention firstly provides a kind of display elements based on mixing TFT structure, including substrate base
Plate, the barrier layer being covered on the underlay substrate, the silicon layer on the barrier layer and capacitor plate are covered in the resistance
Gate insulating layer on interlayer, silicon layer and capacitor plate, on the gate insulating layer corresponding to the first grid of silicon layer,
Correspond to the second grid of the capacitor plate on the gate insulating layer, be covered in the gate insulating layer, the first grid
The first interlayer dielectric layer on pole and second grid, the third for corresponding to first grid on first interlayer dielectric layer
Grid, the second interlayer dielectric layer being covered on the third grid and the first interlayer dielectric layer are set to second interlayer Jie
In electric layer corresponding to second grid metal oxide layer, be set to second interlayer dielectric layer on and respectively with the silicon layer two
Hold the first source electrode being connected and the first drain electrode, drain set on second source electrode at the metal oxide layer both ends and second,
It is covered on second interlayer dielectric layer, the first source electrode, the first drain electrode, the second source electrode, the second drain electrode and metal oxide layer
Passivation layer and the first pixel electrode on the passivation layer；
The gate insulating layer, the first interlayer dielectric layer and the second interlayer dielectric layer, which are equipped with, corresponds to the silicon layer two
The first through hole of the top at end and the second through-hole, first source electrode and the first drain electrode are logical by first through hole and second respectively
Hole is connected with the both ends of the silicon layer；
First interlayer dielectric layer and the second interlayer dielectric layer, which are equipped with, corresponds to the second grid close to the first grid
Third through-hole above the one end of pole, first drain electrode are connected by the third through-hole with the second grid；
The passivation layer is equipped with the fourth hole for corresponding to second drain electrode top, and first pixel electrode passes through
Fourth hole is connected with second drain electrode.
The material of the silicon layer and capacitor plate is same in amorphous silicon or low temperature polycrystalline silicon.
The material of the metal oxide layer is indium gallium zinc oxide.
The display element based on mixing TFT structure is TFT backplate；
Further include pixel defining layer, luminescent layer and the second pixel electrode, pixel defining layer be set to first pixel electrode,
And on passivation layer, the pixel defining layer is equipped with the fifth hole corresponded to above first pixel electrode, and luminescent layer is set
In in the fifth hole, the second pixel electrode is set in the luminescent layer and pixel defining layer.
The display element based on mixing TFT structure is TFT substrate, for being collectively formed with color membrane substrates and liquid crystal layer
One LCD display panel.
The present invention also provides a kind of display elements based on mixing TFT structure, including underlay substrate, are covered in the substrate
Barrier layer on substrate, the silicon layer on the barrier layer and metal oxide layer, be covered in the barrier layer, silicon layer and
Gate insulating layer on metal oxide layer, on the gate insulating layer corresponding to the first grid of silicon layer, be set to it is described
On gate insulating layer corresponding to the metal oxide layer second grid, be covered in the gate insulating layer, first grid and
The first interlayer dielectric layer on second grid, on first interlayer dielectric layer corresponding to the capacitor plate of second grid,
It is covered in the second interlayer dielectric layer on the capacitor plate and the first interlayer dielectric layer, is set to second interlayer dielectric layer
Upper and the first source electrode being connected respectively with the silicon layer both ends and the first drain electrode, be set on second interlayer dielectric layer and
The second source electrode being connected respectively with the metal oxide layer both ends and the second drain electrode are covered in second interlayer dielectric
Layer, the first source electrode, the first drain-source, the second source electrode and the passivation layer in the second drain electrode and the first picture on the passivation layer
Plain electrode；
The gate insulating layer, the first interlayer dielectric layer and the second interlayer dielectric layer, which are equipped with, corresponds to the silicon layer two
The first through hole and the second through-hole of top are held, first source electrode and the first drain electrode are logical by first through hole and second respectively
Hole is connected with the both ends of the silicon layer；
The gate insulating layer, the first interlayer dielectric layer and the second interlayer dielectric layer, which are equipped with, corresponds to the metal oxygen
Third through-hole and fourth hole above compound layer both ends, second source electrode and second drain electrode respectively by third through-hole,
And fourth hole is connected with the both ends of the metal oxide layer；
The passivation layer is equipped with the fifth hole for corresponding to the second drain electrode top, and first pixel electrode passes through the 5th
Through-hole is connected with second drain electrode.
The material of the silicon layer is amorphous silicon or low temperature polycrystalline silicon.
The material of the metal oxide layer is indium gallium zinc oxide.
The display element based on mixing TFT structure is TFT backplate；
It further include pixel defining layer, luminescent layer and the second pixel electrode, pixel defining layer is set to the first pixel electricity
On pole and passivation layer, the pixel defining layer is equipped with the 6th through-hole corresponded to above first pixel electrode, luminescent layer
In the 6th through-hole, the second pixel electrode is set in the luminescent layer and pixel defining layer.
The display element based on mixing TFT structure is TFT substrate, for being collectively formed with color membrane substrates and liquid crystal layer
One LCD display panel.
Beneficial effects of the present invention: a kind of display element based on mixing TFT structure provided by the invention, by mixing
Capacitor plate is set to above or below metal oxide TFT, oxidizes metal object TFT by the Optimal Structure Designing of TFT structure
Grid and capacitor plate between form capacitor, realize and reduce processing procedure road number, reduce production cost；By being utilized respectively silicon substrate TFT
The advantage that switching speed is fast and driving current is big and the advantage that metal oxide TFT homogeneity is good and leakage current is small, when described
When display element based on mixing TFT structure is applied to OLED display, the switching speed of switch TFT can be improved, and mention
The homogeneity for rising OLED display, when the display element based on mixing TFT structure is applied to LCD display device, energy
Leakage current and periphery when improving the driving current of TFT in LCD gate driving circuit, and reducing the driving of LCD display pixel drive
The leakage current of TFT in dynamic circuit.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the structural schematic diagram of the first embodiment of the display element of the invention based on mixing TFT structure；
Fig. 2 is the structural schematic diagram of the second embodiment of the display element of the invention based on mixing TFT structure；
Fig. 3 is the structural schematic diagram of the 3rd embodiment of the display element of the invention based on mixing TFT structure；
Fig. 4 is the structural schematic diagram of the fourth embodiment of the display element of the invention based on mixing TFT structure.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Fig. 1 or Fig. 2 is please referred to, the present invention provides a kind of display element based on mixing TFT structure, including underlay substrate
100, the barrier layer 110 on the underlay substrate 100, silicon layer 210 and capacitor plate on the barrier layer 110 are covered in
220, it is covered in that gate insulating layer 300 on the barrier layer 110, silicon layer 210 and capacitor plate 220, to be set to the grid exhausted
Corresponding to the first grid 410 of silicon layer 210, on the gate insulating layer 300 corresponding to the capacitor plate in edge layer 300
220 second grid 420, the first layer being covered on the gate insulating layer 300, first grid 410 and second grid 420
Between dielectric layer 500, on first interlayer dielectric layer 500 corresponding to first grid 410 third grid 430, be covered in
The second interlayer dielectric layer 600 on the third grid 430 and the first interlayer dielectric layer 500 is set to second interlayer dielectric
Layer 600 on correspond to second grid 420 metal oxide layer 700, be set to second interlayer dielectric layer 600 on and respectively with
The first source electrode 810 that 210 both ends of silicon layer are connected and the first drain electrode 820 are set to 700 both ends of metal oxide layer
The second source electrode 830 and the second drain electrode 840, be covered in second interlayer dielectric layer 600, the drain electrode of the first source electrode 810, first
820, the second source electrode 830, second drain electrode 840 and the passivation layer 900 on metal oxide layer 700 and be set to the passivation layer
The first pixel electrode 1000 on 900.
Wherein, the gate insulating layer 300, the first interlayer dielectric layer 500 and the second interlayer dielectric layer 600 be equipped with pair
The first through hole 310 of the top at 210 both ends of silicon layer and the second through-hole 320 described in Ying Yu, first source electrode 810 and the first leakage
Pole 820 is connected by first through hole 310 and the second through-hole 320 with the both ends of the silicon layer 210 respectively；First interlayer
Dielectric layer 500 and the second interlayer dielectric layer 600, which are equipped with, corresponds to the second grid 420 on 410 one end of first grid
The third through-hole 510 of side, first drain electrode 820 are connected by the third through-hole 510 with the second grid 420；It is described
Passivation layer 900 is equipped with the fourth hole 910 for corresponding to 840 top of the second drain electrode, and first pixel electrode 1000 is logical
Fourth hole 910 is crossed to be connected with second drain electrode 840.
Specifically, the silicon layer 210, first grid 410, third grid 430, the first source electrode 810 and the first drain electrode 820
The two grid silicon substrate TFT of a top-gated (top-gate) is constituted, under high voltages by the certifiable silicon substrate TFT of two grid setting
Stability.
Specifically, the metal oxide layer 700, second grid 420, the second source electrode 830 and the second drain electrode 840 are constituted
The metal oxide TFT of one bottom gate.
Specifically, form capacitor between the capacitor plate 220 and the second grid 420, so by capacitor with it is described
Metal oxide TFT is stacked.
It should be noted that making capacitor plate 220 be set to bottom gate gold by the Optimal Structure Designing to mixing TFT structure
The lower section for belonging to oxide TFT, makes to form capacitor between capacitor plate 220 and the second grid 420, and needs in traditional technology
The two-plate that capacitor is fabricated separately is compared, and processing procedure road number can be efficiently reduced, and reduces production cost.
Specifically, the material of the silicon layer 210 and capacitor plate 220 is same in amorphous silicon or low temperature polycrystalline silicon
Kind, using with along with optical cover process be made on the barrier layer 110, can further reduce road number processed, reduction is produced into
This.
Specifically, the material of the metal oxide layer 700 is indium gallium zinc oxide (indium gallium zinc
Oxide, IGZO).
Specifically, the underlay substrate 100 can be rigid substrates or flexible base board, so that described based on mixing TFT structure
Display element can be applied in rigid display device or flexible display apparatus.
Specifically, referring to Fig. 1, in the first embodiment of the present invention, the display element based on mixing TFT structure
For TFT backplate.
Further, the display element based on mixing TFT structure further includes pixel defining layer 1100, luminescent layer 1200
And second pixel electrode 1300, pixel defining layer 1100 is set on first pixel electrode 1000 and passivation layer 900, described
Pixel defining layer 1100 is equipped with the fifth hole 1110 for corresponding to 1000 top of the first pixel electrode, and luminescent layer 1200 is set
In in the fifth hole 1110, the second pixel electrode 1300 is set in the luminescent layer 1200 and pixel defining layer 1100.
It should be noted that being shown when the display element based on mixing TFT structure is applied to OLED as TFT backplate
When device, the capacitor formed between the capacitor plate 220 and the second grid 420 is as OLED display pixel driving circuit
In storage capacitance；The silicon substrate TFT utilizes silicon substrate TFT switch speed as the switch TFT in OLED display pixel driving circuit
Fast advantage is spent, the switching speed of effectively lifting switch TFT is capable of；The metal oxide TFT is as OLED display pixel
Driving TFT in driving circuit can effectively promote the equal of driving TFT using the good advantage of metal oxide TFT homogeneity
One property, and then the homogeneity of OLED display picture is promoted, to promote the quality of OLED display.
Specifically, referring to Fig. 2, in the second embodiment of the present invention, the display element based on mixing TFT structure
For TFT substrate, for a LCD display panel to be collectively formed with color membrane substrates and liquid crystal layer.
It should be noted that being shown when the display element based on mixing TFT structure is applied to LCD as TFT substrate
When device, the silicon substrate TFT is applied to the gate driving circuit on tft array substrate, utilizes big excellent of silicon substrate TFT driving current
Gesture can effectively promote the driving current of TFT in gate driving circuit；The metal oxide TFT is applied to tft array base
The driving of LCD display pixel and peripheral drive circuit on plate can be effective using the small advantage of metal oxide TFT leakage current
Ground reduces the leakage current of TFT in leakage current and peripheral drive circuit when LCD display pixel drives, to promote LCD display dress
The quality set.
Fig. 3 or Fig. 4 is please referred to, the present invention also provides a kind of display elements based on mixing TFT structure, including underlay substrate
100 ', the barrier layer 110 ' on the underlay substrate 100 ', the silicon layer 210 ' being set on the barrier layer 110 ' and gold are covered in
Belong to oxide skin(coating) 220 ', the gate insulating layer being covered on the barrier layer 110 ', silicon layer 210 ' and metal oxide layer 220 '
300 ', it is set on the gate insulating layer 300 ' and corresponds to the first grid 410 ' of silicon layer 210 ', is set to the gate insulating layer
Correspond to the second grid 420 ' of the metal oxide layer 220 ' on 300 ', be covered in the gate insulating layer 300 ', first
The first interlayer dielectric layer 500 ' on grid 410 ' and second grid 420 ' is set to first interlayer dielectric layer 500 ' on pair
Should in second grid 410 ' capacitor plate 430 ', be covered on the capacitor plate 430 ' and the first interlayer dielectric layer 500 '
The second interlayer dielectric layer 600 ', be set to second interlayer dielectric layer 600 ' on and be connected respectively with the 210 ' both ends of silicon layer
The first source electrode 710 ' connect and first drain electrode 720 ', be set to second interlayer dielectric layer 600 ' on and respectively with the metal
The second source electrode 730 ' that 220 ' both ends of oxide skin(coating) are connected and the second drain electrode 740 ' are covered in second interlayer dielectric layer
600 ', first source electrode 710 ', the first drain-source 720 ', the second source electrode 730 ' and second drain electrode 740 ' on passivation layer 800 ' and set
In the first pixel electrode 900 ' on the passivation layer 800 '.
Wherein, the gate insulating layer 300 ', the first interlayer dielectric layer 500 ' and the second interlayer dielectric layer 600 ' are equipped with
Corresponding to the first through hole 310 ' and the second through-hole 320 ' above the 210 ' both ends of silicon layer, first source electrode 710 ' and
One drain electrode 720 ' is connected by first through hole 310 ' and the second through-hole 320 ' with the both ends of the silicon layer 210 ' respectively；It is described
Gate insulating layer 300 ', the first interlayer dielectric layer 500 ' and the second interlayer dielectric layer 600 ', which are equipped with, corresponds to the metal oxygen
Third through-hole 330 ' and fourth hole 340 ' above 220 ' both ends of compound layer, second source electrode 730 ' and the second drain electrode
740 ' are connected by third through-hole 330 ' and fourth hole 340 ' with the both ends of the metal oxide layer 220 ' respectively；Institute
It states passivation layer 800 ' and is equipped with the fifth hole 810 ' corresponded to above the second drain electrode 740 ', first pixel electrode 900 ' is logical
Fifth hole 810 ' is crossed to be connected with second drain electrode 740 '.
Specifically, the silicon layer 210 ', first grid 410 ', the first source electrode 710 ' and the first drain electrode 720 ' constitute a top
The silicon substrate TFT of grid.
Specifically, the metal oxide layer 220 ', second grid 420 ', the second source electrode 730 ' and the second drain electrode 740 '
The mobility of metal oxide TFT can be improved by the setting of top gate structure by the metal oxide TFT for constituting a top-gated.
Specifically, capacitor is formed between the capacitor plate 430 ' and the second grid 420 ', and then by capacitor and institute
State metal oxide TFT stacking.
It should be noted that making capacitor plate 430 ' be set to top-gated gold by the Optimal Structure Designing to mixing TFT structure
The top for belonging to oxide TFT, makes to form capacitor between capacitor plate 430 ' and the second grid 420 ', and needs in traditional technology
The two-plate that capacitor is fabricated separately is compared, and processing procedure road number can be efficiently reduced, and reduces production cost.
Specifically, the material of the silicon layer 210 ' is amorphous silicon or low temperature polycrystalline silicon.
Specifically, the material of the metal oxide layer 220 ' is indium gallium zinc oxide.
Specifically, the underlay substrate 100 ' can be rigid substrates or flexible base board, so that described based on mixing TFT structure
Display element can be applied in rigid display device or flexible display apparatus.
Specifically, referring to Fig. 3, in the third embodiment of the present invention, the display element based on mixing TFT structure
For TFT backplate.
Further, the display element based on mixing TFT structure further includes pixel defining layer 1000 ', luminescent layer
1100 ' and second pixel electrode 1200 ', pixel defining layer 1000 ' be set to first pixel electrode 900 ' and passivation layer
On 800 ', the pixel defining layer 1000 ' is equipped with the 6th through-hole corresponded to above first pixel electrode 900 '
1010 ', luminescent layer 1100 ' is set in the 6th through-hole 1010 ', and the second pixel electrode 1200 ' is set to the luminescent layer 1100 '
And in pixel defining layer 1000 '.
It should be noted that being shown when the display element based on mixing TFT structure is applied to OLED as TFT backplate
When device, the capacitor formed between the capacitor plate 430 ' and the second grid 420 ' drives electricity as OLED display pixel
Storage capacitance in road；The silicon substrate TFT utilizes silicon substrate TFT switch as the switch TFT in OLED display pixel driving circuit
Fireballing advantage is capable of the switching speed of effectively lifting switch TFT；The metal oxide TFT shows picture as OLED
Driving TFT in plain driving circuit can effectively promote driving TFT's using the good advantage of metal oxide TFT homogeneity
Homogeneity, and then the homogeneity of OLED display picture is promoted, to promote the quality of OLED display.
Specifically, referring to Fig. 4, in the fourth embodiment of the present invention, the display element based on mixing TFT structure
For TFT substrate, for a LCD display panel to be collectively formed with color membrane substrates and liquid crystal layer.
It should be noted that being shown when the display element based on mixing TFT structure is applied to LCD as TFT substrate
When device, the silicon substrate TFT is applied to the gate driving circuit on tft array substrate, utilizes big excellent of silicon substrate TFT driving current
Gesture can effectively promote the driving current of TFT in gate driving circuit；The metal oxide TFT is applied to tft array base
The driving of LCD display pixel and peripheral drive circuit on plate can be effective using the small advantage of metal oxide TFT leakage current
Ground reduces the leakage current of TFT in leakage current and peripheral drive circuit when LCD display pixel drives, to promote LCD display dress
The quality set.
In conclusion the display element of the invention based on mixing TFT structure, excellent by the structure to mixing TFT structure
Change design, capacitor plate is set to above or below metal oxide TFT, the grid and capacitance pole of object TFT are oxidized metal
Capacitor is formed between plate, realizes and reduces processing procedure road number, reduces production cost；By being utilized respectively silicon substrate TFT switch speed fastly and driving
The big advantage of streaming current and the advantage that metal oxide TFT homogeneity is good and leakage current is small, when described based on mixing TFT structure
Display element be applied to OLED display when, can be improved the switching speed of switch TFT, and promote OLED display
Homogeneity can improve LCD gate driving electricity when the display element based on mixing TFT structure is applied to LCD display device
The driving current of TFT in road, and reduce the electric leakage of TFT in the leakage current and peripheral drive circuit when the driving of LCD display pixel
Stream.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (10)
1. a kind of display element based on mixing TFT structure, which is characterized in that including underlay substrate (100), be covered in the lining
Barrier layer (110) on substrate (100), covers the silicon layer (210) being set on the barrier layer (110) and capacitor plate (220)
It is placed on gate insulating layer (300) on the barrier layer (110), silicon layer (210) and capacitor plate (220), is set to the grid
Corresponding to the first grid (410) of silicon layer (210), on the gate insulating layer (300) corresponding to institute on insulating layer (300)
It states the second grid (420) of capacitor plate (220), be covered in the gate insulating layer (300), first grid (410) and second
The first interlayer dielectric layer (500) on grid (420) is set on first interlayer dielectric layer (500) and corresponds to first grid
(410) third grid (430), the second layer being covered on the third grid (430) and the first interlayer dielectric layer (500)
Between dielectric layer (600), be set to second interlayer dielectric layer (600) on correspond to second grid (420) metal oxide layer
(700), it is set to the first source electrode being connected on second interlayer dielectric layer (600) and with the silicon layer (210) both ends respectively
(810) and first drains (820), set on second source electrode (830) at the metal oxide layer (700) both ends and the second drain electrode
(840), second interlayer dielectric layer (600), the first source electrode (810), the first drain electrode (820), the second source electrode are covered in
(830), the second drain electrode (840) and passivation layer (900) on metal oxide layer (700) and the passivation layer (900) are set to
On the first pixel electrode (1000)；
The gate insulating layer (300), the first interlayer dielectric layer (500) and the second interlayer dielectric layer (600), which are equipped with, to be corresponded to
The first through hole (310) of the top at silicon layer (210) both ends and the second through-hole (320), first source electrode (810) and the
One drain electrode (820) is connected by first through hole (310) and the second through-hole (320) with the both ends of the silicon layer (210) respectively；
First interlayer dielectric layer (500) and the second interlayer dielectric layer (600), which are equipped with, corresponds to the second grid
(420) third through-hole (510) above first grid (410) one end, first drain electrode (820) are logical by the third
Hole (510) is connected with the second grid (420)；
The passivation layer (900) be equipped with correspond to it is described second drain electrode (840) above fourth hole (910), described first
Pixel electrode (1000) is connected by fourth hole (910) with second drain electrode (840).
2. the display element as described in claim 1 based on mixing TFT structure, which is characterized in that the silicon layer (210) and electricity
It is same in amorphous silicon or low temperature polycrystalline silicon for holding the material of pole plate (220).
3. the display element as described in claim 1 based on mixing TFT structure, which is characterized in that the metal oxide layer
(700) material is indium gallium zinc oxide.
4. the display element as described in claim 1 based on mixing TFT structure, which is characterized in that described based on mixing TFT knot
The display element of structure is TFT backplate；
It further include pixel defining layer (1100), luminescent layer (1200) and the second pixel electrode (1300), pixel defining layer (1100)
On first pixel electrode (1000) and passivation layer (900), the pixel defining layer (1100), which is equipped with, corresponds to institute
The fifth hole (1110) above the first pixel electrode (1000) is stated, luminescent layer (1200) is set to the fifth hole (1110)
Interior, the second pixel electrode (1300) is set in the luminescent layer (1200) and pixel defining layer (1100).
5. the display element as described in claim 1 based on mixing TFT structure, which is characterized in that described based on mixing TFT knot
The display element of structure is TFT substrate, for a LCD display panel to be collectively formed with color membrane substrates and liquid crystal layer.
6. a kind of display element based on mixing TFT structure, which is characterized in that including underlay substrate (100 '), be covered in it is described
Barrier layer (110 ') on underlay substrate (100 '), silicon layer (210 ') and metal oxide on the barrier layer (110 ')
Layer (220 '), the gate insulating layer being covered on the barrier layer (110 '), silicon layer (210 ') and metal oxide layer (220 ')
(300 ') first grid (410 ') for corresponding to silicon layer (210 ') on the gate insulating layer (300 '), are set to the grid
On pole insulating layer (300 ') corresponding to the second grid (420 ') of the metal oxide layer (220 '), to be covered in the grid exhausted
The first interlayer dielectric layer (500 ') on edge layer (300 '), first grid (410 ') and second grid (420 ') is set to described the
Correspond to the capacitor plate (430 ') of second grid (410 ') on one interlayer dielectric layer (500 '), be covered in the capacitor plate
The second interlayer dielectric layer (600 ') on (430 ') and the first interlayer dielectric layer (500 ') is set to second interlayer dielectric layer
The first source electrode (710 ') being connected on (600 ') and respectively with silicon layer (the 210 ') both ends and the first drain electrode (720 ') are set
In the second source being connected on second interlayer dielectric layer (600 ') and respectively with metal oxide layer (the 220 ') both ends
Pole (730 ') and the second drain electrode (740 ') are covered in second interlayer dielectric layer (600 '), the first source electrode (710 '), first
Drain-source (720 '), the second source electrode (730 ') and second drain electrode (740 ') on passivation layer (800 ') and be set to the passivation layer
The first pixel electrode (900 ') on (800 ')；
The gate insulating layer (300 '), the first interlayer dielectric layer (500 ') and the second interlayer dielectric layer (600 ') be equipped with pair
First through hole (310 ') and the second through-hole (320 ') above silicon layer (210 ') both ends described in Ying Yu, first source electrode
(710 ') and the first drain electrode (720 ') pass through first through hole (310 ') and the second through-hole (320 ') and the silicon layer respectively
The both ends of (210 ') are connected；
The gate insulating layer (300 '), the first interlayer dielectric layer (500 ') and the second interlayer dielectric layer (600 ') be equipped with pair
Third through-hole (330 ') and fourth hole (340 ') above metal oxide layer (220 ') both ends described in Ying Yu, described second
Source electrode (730 ') and the second drain electrode (740 ') pass through third through-hole (330 ') and fourth hole (340 ') and the metal respectively
The both ends of oxide skin(coating) (220 ') are connected；
The passivation layer (800 ') is equipped with the fifth hole (810 ') corresponded to above the second drain electrode (740 '), first picture
Plain electrode (900 ') is connected by fifth hole (810 ') with second drain electrode (740 ').
7. the display element as claimed in claim 6 based on mixing TFT structure, which is characterized in that the silicon layer (210 ')
Material is amorphous silicon or low temperature polycrystalline silicon.
8. the display element as claimed in claim 6 based on mixing TFT structure, which is characterized in that the metal oxide layer
The material of (220 ') is indium gallium zinc oxide.
9. the display element as claimed in claim 6 based on mixing TFT structure, which is characterized in that described based on mixing TFT knot
The display element of structure is TFT backplate；
It further include pixel defining layer (1000 '), luminescent layer (1100 ') and the second pixel electrode (1200 '), pixel defining layer
(1000 ') it is set on first pixel electrode (900 ') and passivation layer (800 '), is set on the pixel defining layer (1000 ')
There is the 6th through-hole (1010 ') corresponded to above first pixel electrode (900 '), luminescent layer (1100 ') is set to the described 6th
In through-hole (1010 '), the second pixel electrode (1200 ') is set in the luminescent layer (1100 ') and pixel defining layer (1000 ').
10. the display element as claimed in claim 6 based on mixing TFT structure, which is characterized in that described based on mixing TFT
The display element of structure is TFT substrate, for a LCD display panel to be collectively formed with color membrane substrates and liquid crystal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452481.9A CN106024838B (en) | 2016-06-21 | 2016-06-21 | Display element based on mixing TFT structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452481.9A CN106024838B (en) | 2016-06-21 | 2016-06-21 | Display element based on mixing TFT structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024838A CN106024838A (en) | 2016-10-12 |
| CN106024838B true CN106024838B (en) | 2019-04-30 |
Family
ID=57087000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610452481.9A Active CN106024838B (en) | 2016-06-21 | 2016-06-21 | Display element based on mixing TFT structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024838B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847828B (en) * | 2017-02-09 | 2021-01-26 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon array substrate and manufacturing method thereof |
| CN106935549B (en) * | 2017-03-20 | 2019-11-29 | 昆山工研院新型平板显示技术中心有限公司 | The production method and thin-film transistor array base-plate of thin-film transistor array base-plate |
| US10290665B2 (en) | 2017-04-10 | 2019-05-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Array substrates, display devices, and the manufacturing methods thereof |
| CN106910748A (en) * | 2017-04-10 | 2017-06-30 | 深圳市华星光电技术有限公司 | A kind of array base palte, display device and preparation method thereof |
| CN106952618B (en) * | 2017-05-26 | 2019-11-29 | 京东方科技集团股份有限公司 | Display device and pixel circuit and its control method |
| CN107293552A (en) * | 2017-06-05 | 2017-10-24 | 深圳市华星光电技术有限公司 | A kind of array base palte and display device |
| CN109216373B (en) * | 2017-07-07 | 2021-04-09 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
| CN107706224B (en) * | 2017-09-30 | 2020-09-04 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN109671720B (en) * | 2018-12-07 | 2021-02-02 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN109920800A (en) * | 2019-02-28 | 2019-06-21 | 武汉华星光电半导体显示技术有限公司 | A kind of display device and preparation method thereof |
| JP2023554153A (en) * | 2021-01-27 | 2023-12-26 | 華為技術有限公司 | Semiconductor device, manufacturing method thereof, and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407373A (en) * | 2001-08-08 | 2003-04-02 | 株式会社半导体能源研究所 | Display device |
| CN101872779A (en) * | 2009-04-21 | 2010-10-27 | 统宝光电股份有限公司 | Image display system and manufacturing method thereof |
| CN103077957A (en) * | 2013-02-22 | 2013-05-01 | 深圳市华星光电技术有限公司 | Active matrix type organic light emitting diode display device and manufacturing method thereof |
| CN104810382A (en) * | 2015-05-07 | 2015-07-29 | 深圳市华星光电技术有限公司 | AMOLED (active matrix/organic light emitting diode) backboard production method and AMOLED backboard structure |
| CN105552085A (en) * | 2015-12-25 | 2016-05-04 | 昆山国显光电有限公司 | Pixel driving circuit and preparation method thereof |
-
2016
- 2016-06-21 CN CN201610452481.9A patent/CN106024838B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407373A (en) * | 2001-08-08 | 2003-04-02 | 株式会社半导体能源研究所 | Display device |
| CN101872779A (en) * | 2009-04-21 | 2010-10-27 | 统宝光电股份有限公司 | Image display system and manufacturing method thereof |
| CN103077957A (en) * | 2013-02-22 | 2013-05-01 | 深圳市华星光电技术有限公司 | Active matrix type organic light emitting diode display device and manufacturing method thereof |
| CN104810382A (en) * | 2015-05-07 | 2015-07-29 | 深圳市华星光电技术有限公司 | AMOLED (active matrix/organic light emitting diode) backboard production method and AMOLED backboard structure |
| CN105552085A (en) * | 2015-12-25 | 2016-05-04 | 昆山国显光电有限公司 | Pixel driving circuit and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106024838A (en) | 2016-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106024838B (en) | Display element based on mixing TFT structure | |
| US10658403B2 (en) | TFT substrate and manufacturing method thereof | |
| CN105336745B (en) | Low temperature polycrystalline silicon TFT substrate | |
| US9768200B2 (en) | TFT backplate structure and manufacture method thereof | |
| US10331001B2 (en) | TFT substrate and manufacturing method thereof | |
| CN104157678B (en) | Dot structure and circuit with high aperture | |
| US10504731B2 (en) | TFT substrate and manufacturing method thereof | |
| WO2016165189A1 (en) | Tft layout structure | |
| US20160247836A1 (en) | Tft backplate structure and manufacture method thereof | |
| TW201532264A (en) | Dual displayer, control device of the dual displayer and method for manufacturing thereof | |
| KR101524726B1 (en) | Led display device | |
| CN110534577B (en) | Thin film transistor and preparation method thereof | |
| WO2016165183A1 (en) | Tft layout structure | |
| CN106652815B (en) | Display panel and display device | |
| CN113809099B (en) | Array substrate and display panel | |
| US20140204305A1 (en) | Tft structure, lcd device, and method for manufacturing tft | |
| CN106611764A (en) | Display equipment | |
| CN102592532A (en) | Organic EL display unit and electronic apparatus | |
| US10714514B2 (en) | Back-channel-etched TFT substrate | |
| CN106952928B (en) | A kind of production method and TFT backplate of TFT backplate | |
| US10109659B2 (en) | TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof | |
| US20190386149A1 (en) | Back-channel-etch type oxide semiconductor tft substrate and fabricating methods thereof | |
| US9614036B2 (en) | Manufacture method of TFT substrate and sturcture thereof | |
| US9899421B2 (en) | Manufacture method of TFT substrate and sturcture thereof | |
| US10749037B2 (en) | Low temperature poly-silicon TFT substrate and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |