CN106024732A - Device for temperature control and manufacturing method of device - Google Patents
Device for temperature control and manufacturing method of device Download PDFInfo
- Publication number
- CN106024732A CN106024732A CN201610389976.1A CN201610389976A CN106024732A CN 106024732 A CN106024732 A CN 106024732A CN 201610389976 A CN201610389976 A CN 201610389976A CN 106024732 A CN106024732 A CN 106024732A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- pipe clamp
- pedestal
- die array
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Abstract
The invention belongs to the field of single-photon detection and quantum security communication and particularly relates to a device for temperature control and a manufacturing method of the device. The device comprises a pipe clamp or a base, wherein the pipe clamp or the base and a ceramic substrate are integrally sintered and molded; and the integral structure formed by the ceramic substrate and the pipe clamp or the base is made of aluminum oxide ceramic. The ceramic substrate and the pipe clamp or the base are set to be the integral structure, so that the connection is reliable; the device has the advantages of high and low temperature cycle resistance, oxidation resistance, ageing resistance and long service lifetime and can adapt to large-scale mass production; and the consistency and the reliability of the performance of the device are improved.
Description
Technical field
The invention belongs to single photon detection and field of quantum secure communication, particularly to a kind of dress for temperature control
Put and preparation method thereof.
Background technology
In single photon detection and Quantum Secure Communication field, frequently with semiconductor heating refrigerator (TEC)
Control the temperature of avalanche diode or waveguide component, avalanche diode and waveguide component and be individually positioned in pipe clamp
With on pedestal, TEC first passes through ceramic substrate and conducts heat to pipe clamp or pedestal, the most again by pipe clamp or base
Seat conduct heat to avalanche diode or waveguide component, as it is shown in figure 1, in prior art pipe clamp 13 ' or
Pedestal and ceramic substrate 12 ' are split-type structural, and pipe clamp 13 ' or pedestal are made up of metal material, pipe clamp 13 '
Or the faying face M between pedestal and ceramic substrate 12 ' substantially has two kinds of connected modes:
(1) ceramic substrate 12 ' of TEC upper surface is that scolding tin welds with pipe clamp 13 ' or pedestal.This connection side
The defect of formula is: owing to device uses environmental requirement pipe clamp or pedestal to be in room temperature and-50 DEG C or the friendship of 60 DEG C
For in environment, and the moisture in air inside working environment, can not be removed, table on TEC after work a period of time
Ceramic substrate 12 ' the metalized portion in face can aoxidize with pipe clamp 13 ' or pedestal scolding tin weld, pipe clamp 13 '
Or pedestal will come off, product is caused to be continuing with.
(2) ceramic substrate 12 ' of TEC upper surface and pipe clamp 13 ' or pedestal are heat conductive silica gel bonding.This is even
The defect connecing mode is: the heat conductivity of heat conductive silica gel is too low, and pipe clamp 13 ' or pedestal reach preferable setting
The time of temperature is longer, and heat conductive silica gel is smeared cumbersome with curing process, and heat conductive silica gel exists problem of aging.
Summary of the invention
The technical problem to be solved be to provide a kind of good heat conduction effect, durability high for temperature control
Device, and the manufacture method of this device.
The present invention is by the techniques below means above-mentioned technical problem of solution: a kind of device for temperature control,
Including semiconductor heating refrigerator, the huyashi-chuuka (cold chinese-style noodles) of described semiconductor heating refrigerator is provided with die array, described crystalline substance
Grain array is made up of high-thermal conductive metal material, and described die array is arranged over ceramic substrate and for housing
The pipe clamp of avalanche diode, described pipe clamp is made of ceramic materials, and pipe clamp is fired with ceramic substrate integral type
Molding, does metalized bottom described ceramic substrate, with described bottom the ceramic substrate after metalized
Die array is welded and fixed；
Preferably, reinforcement, described reinforcement it are provided with between sidewall and the upper surface of ceramic substrate of described pipe clamp
Muscle forms by a firing with ceramic substrate and pipe clamp integral type；
Preferably, described ceramic substrate and pipe clamp are made up of aluminium oxide ceramics；
Preferably, the huyashi-chuuka (cold chinese-style noodles) of described semiconductor heating refrigerator is provided with multi-layered ceramic substrate, each layer ceramic substrate
Be parallel to each other interval setting, and is equipped with die array between adjacent two layers ceramic substrate, wherein outermost layer pottery
Ceramic chip forms by a firing with described pipe clamp integral type.
A kind of device for temperature control, including semiconductor heating refrigerator, described semiconductor heating refrigerator
Hot side is provided with die array, and described die array is made up of high-thermal conductive metal material, above described die array
Being provided with ceramic substrate and for housing the pedestal of waveguide component, described pedestal is made of ceramic materials, and base
Seat forms by a firing with ceramic substrate integral type, does metalized, metalized bottom described ceramic substrate
After ceramic substrate bottom be welded and fixed with described die array；
Preferably, reinforcement, described reinforcement it are provided with between sidewall and the upper surface of ceramic substrate of described pedestal
Muscle forms by a firing with ceramic substrate and pedestal integral type；
Preferably, described ceramic substrate and pedestal are made up of aluminium oxide ceramics；
Preferably, the hot side of described semiconductor heating refrigerator is provided with multi-layered ceramic substrate, each layer ceramic substrate
Be parallel to each other interval setting, and is equipped with die array between adjacent two layers ceramic substrate, wherein outermost layer pottery
Ceramic chip forms by a firing with described pedestal integral type.
A kind of manufacture method for manufacturing described device, comprises the steps:
Step 1: alumina powder is prepared as less than 1 micron powder body；
Step 2: mixed homogeneously with alumina powder jointed by organic binder bond, organic binder bond proportion is 5%-20%；
Step 3: alumina slurry is injected mould；
Step 4: mould being put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature controls
800℃；
Step 5: the demoulding after preliminary sintering, uses plane pressurization to ensure profile, then carries out high temperature static pressure sintering,
Described high temperature static pressure sintering temperature controls at 1200 DEG C-2000 DEG C；
Step 6: after having sintered, grinds smooth by injecting hole, ceramic substrate and pipe clamp or pedestal integral type knot
Structure completes；
Step 7: to carrying out metalized bottom ceramic substrate, make to adhere to securely bottom ceramic substrate one layer
Metallic film；
Step 8: utilize described metallic film to be welded and fixed with die array by ceramic substrate；
Preferably, any one in described aluminium oxide selection 93-99 aluminium oxide.
The method have technical effect that: ceramic substrate and pipe clamp or pedestal are arranged to integral type knot by the present invention
Structure, connects reliable, and high-low temperature resistant circulation, resistance to oxidation, ageing-resistant, service life is long；And can adapt to big
Scale volume production, improves the concordance of device performance, reliability.
Accompanying drawing explanation
Fig. 1 is attemperating unit structural representation of the prior art；
Fig. 2 is the perspective view of the present invention；
Fig. 3 is the pipe clamp perspective view of the present invention；
Fig. 4 is the tridimensional structural representation of the present invention.
Detailed description of the invention
Following embodiment is to further illustrate to explain as to the technology of the present invention content for present invention
Release, but the flesh and blood of the present invention is not limited in described in following embodiment, those of ordinary skill in the art
And can should know any simple change based on true spirit or replacement all should belong to institute of the present invention
The protection domain required.
In describing the invention, it should be noted that term " on ", D score, " interior ", " outward " etc. refer to
The orientation shown or position relationship, for based on orientation shown in the drawings or position relationship, are for only for ease of description originally
Invention and simplification describe rather than indicate or imply that the device of indication or element must have particular orientation structure
And operation, therefore it is not considered as limiting the invention.
Embodiment 1
As shown in Figure 2,3, a kind of device for temperature control, including semiconductor heating refrigerator 10, described half
Conductor heats the huyashi-chuuka (cold chinese-style noodles) of refrigerator 10 and is provided with die array 11, and described die array 11 is by high-thermal conductive metal material
Material is made, and described die array 11 is arranged over ceramic substrate 12 and for housing the pipe of avalanche diode
Folder 13, described pipe clamp 13 is halfpipe, and pipe clamp 13 is provided with at least one for housing snowslide two pole
The arcuate groove 131 of pipe, described pipe clamp 13 is made of ceramic materials, and pipe clamp 13 is with ceramic substrate 12 integrally
Formula forms by a firing, and does metalized bottom described ceramic substrate 12, the ceramic substrate 12 after metalized
Bottom is welded and fixed with described die array 11.Pipe clamp 13 and the pottery of semiconductor heating refrigerator 10 upper surface
Ceramic chip 12 is fabricated to integrative-structure, can increase considerably the service life of attemperating unit, and increasing product can
By property, cost-effective.
Preferably, between sidewall and the upper surface of ceramic substrate 12 of described pipe clamp 13, it is provided with reinforcement 15,
Described reinforcement 15 forms by a firing with ceramic substrate 12 and pipe clamp 13 integral type.Without the mechanism of reinforcement 15,
Use demand can also be met, but in view of the perfection of structure, introduce reinforcement 15, can be the most excellent
Change flatness and circularity, again increase product reliability.
Preferably, described ceramic substrate 12 and pipe clamp 13 are made up of aluminium oxide ceramics.At this one knot of design
During structure, first difficult point is the selection of material, will have good heat conduction and certain structural strength, tests 93-99
Aluminium oxide all can meet use requirement.
Preferably, the huyashi-chuuka (cold chinese-style noodles) of described semiconductor heating refrigerator 10 is provided with multi-layered ceramic substrate, each layer ceramic base
Sheet is parallel to each other to be spaced and arranges, and is equipped with die array between adjacent two layers ceramic substrate, wherein outermost layer
Ceramic substrate 12 forms by a firing with described pipe clamp 13 integral type.
Embodiment 2
As Fig. 2 combines shown in Fig. 4, a kind of device for temperature control, including semiconductor heating refrigerator 10,
The hot side of described semiconductor heating refrigerator 10 is provided with die array 11, and described die array 11 is by high heat conduction
Metal material is made, and described die array 11 is arranged over ceramic substrate 12 and for housing waveguide component
Pedestal 14, described pedestal 14 is bar groove-like structure, and described pedestal 14 is made of ceramic materials, and pedestal
14 form by a firing with ceramic substrate 12 integral type, do metalized, metal bottom described ceramic substrate 12
It is welded and fixed with described die array 11 bottom ceramic substrate 12 after change process.
Preferably, between sidewall and the upper surface of ceramic substrate 12 of described pedestal 14, it is provided with reinforcement 15,
Described reinforcement 15 forms by a firing with ceramic substrate 12 and pedestal 14 integral type.
Preferably, described ceramic substrate 12 and pedestal 14 are made up of aluminium oxide ceramics.
Preferably, the hot side of described semiconductor heating refrigerator 10 is provided with multi-layered ceramic substrate, each layer ceramic base
Sheet is parallel to each other to be spaced and arranges, and is equipped with die array between adjacent two layers ceramic substrate, wherein outermost layer
Ceramic substrate 12 forms by a firing with described pedestal 14 integral type.
Embodiment 3
Present invention also offers the manufacture method of the attemperating unit of a kind of above-described embodiment 1 and 2, including as follows
Step:
Step 1: alumina powder is prepared as less than 1 micron powder body；
Step 2: mixed homogeneously with alumina powder jointed by organic binder bond, organic binder bond proportion is 5%-20%.
Step 3: alumina slurry injects mould, the design of mould can be according to pipe clamp 13 or the shape of pedestal 14
Shape specifically considers, is as the criterion adapting to actually used demand；
Step 4: mould being put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature controls
800℃；
Step 5: the demoulding after preliminary sintering, uses plane pressurization to ensure profile, then carries out high temperature static pressure sintering,
Described high temperature static pressure sintering temperature controls at 1200 DEG C-2000 DEG C；
Step 6: after having sintered, grinds smooth by injecting hole, ceramic substrate 12 and pipe clamp 13 or pedestal
14 integral structures complete；
Step 7: to carrying out metalized bottom ceramic substrate 12, makes to glue securely bottom ceramic substrate 12
Attached layer of metal thin film；Ceramic metallization is to adhere to layer of metal thin film securely at ceramic surface, is allowed to real
Existing ceramic and intermetallic welding, existing molybdenum manganese method, gold-plated method, copper-plating method, tin plating method, nickel plating method etc. are many
Plant ceramic metalizing process；As a example by pottery nickel plating, key step boil wash, coating of metallizing, once golden
Genusization (sintering in high-temperature hydrogen atmosphere), nickel plating, welding；Metallized main purpose reach exactly metal with
Between pottery solderable.
Step 8: utilize described metallic film to be welded and fixed with die array by ceramic substrate；
Preferably, described aluminium oxide selects any one in 93-99 aluminium oxide, present invention preferably employs 95
Aluminium oxide, and preliminary static pressure sintering temperature is controlled at 800 DEG C, high temperature static pressure sintering temperature controls at 1500 DEG C.
The present invention is by the ceramic substrate 12 of semiconductor heating refrigerator (TEC) the superiors and pipe clamp 13 or pedestal
14 are made as pottery integral structure, can avoid due to the pottery of metal pipe clamp 13 ' or pedestal with TEC upper surface
Ceramic chip 12 ' connected mode be scolding tin welding or heat-conducting glue bonding cause come off, poor refrigerating efficiency, heat conduction
There is aging problem in glue itself；And pottery integrated pipe clamp is ceramic material, there is not the coefficient of expansion not
With coming off of causing；Pottery integrated pipe clamp bottom surface carries out metalized, welds with TEC crystal grain 11, by
Consistent, no with crystal particle welding mode with ceramic substrate 12 ' with crystal grain 11 welding manner in pottery integrated pipe clamp
Other undesirable elements can be introduced.Problem that this method efficiently solves pipe clamp 13 or pedestal comes off, and refrigeration or
Heat bad problem.
Claims (10)
1. for a device for temperature control, including semiconductor heating refrigerator, described semiconductor heating refrigerator
Huyashi-chuuka (cold chinese-style noodles) be provided with die array, described die array is made up of high-thermal conductive metal material, in described die array
Side is provided with ceramic substrate and for housing the pipe clamp of avalanche diode, it is characterised in that: described pipe clamp is by making pottery
Ceramic material is made, and described pipe clamp forms by a firing with ceramic substrate integral type, does metal bottom described ceramic substrate
Change processes, and is welded and fixed with described die array bottom the ceramic substrate after metalized.
Device for temperature control the most according to claim 1, it is characterised in that: the sidewall of described pipe clamp
And being provided with reinforcement between the upper surface of ceramic substrate, described reinforcement burns with ceramic substrate and pipe clamp integral type
Make type.
Device for temperature control the most according to claim 1 and 2, it is characterised in that: described ceramic base
Sheet and pipe clamp are made up of aluminium oxide ceramics.
Device for temperature control the most according to claim 1, it is characterised in that: described semiconductor heating
The huyashi-chuuka (cold chinese-style noodles) of refrigerator is provided with multi-layered ceramic substrate, and each layer ceramic substrate is parallel to each other to be spaced and arranges, and adjacent two
Being equipped with die array between layer ceramic substrate, wherein outermost layer ceramic substrate is fired with described pipe clamp integral type
Molding.
5. for a device for temperature control, including semiconductor heating refrigerator, described semiconductor heating refrigerator
Hot side be provided with die array, described die array is made up of high-thermal conductive metal material, in described die array
Side is provided with ceramic substrate and for housing the pedestal of waveguide component, it is characterised in that: described pedestal is by pottery
Material is made, and described pedestal forms by a firing with ceramic substrate integral type, metallizes bottom described ceramic substrate
Process, be welded and fixed with described die array bottom the ceramic substrate after metalized.
Device for temperature control the most according to claim 5, it is characterised in that: the sidewall of described pedestal
And being provided with reinforcement between the upper surface of ceramic substrate, described reinforcement burns with ceramic substrate and pedestal integral type
Make type.
7. according to the device for temperature control described in claim 5 or 6, it is characterised in that: described ceramic base
Sheet and pedestal are made up of aluminium oxide ceramics.
Device for temperature control the most according to claim 5, it is characterised in that: described semiconductor heating
The hot side of refrigerator is provided with multi-layered ceramic substrate, and each layer ceramic substrate is parallel to each other to be spaced and arranges, and adjacent two
Being equipped with die array between layer ceramic substrate, wherein outermost layer ceramic substrate is fired with described pedestal integral type
Molding.
9., for manufacturing a manufacture method for device as described in claim 1-8 any one, its feature exists
In comprising the steps:
Step 1: alumina powder is prepared as less than 1 micron powder body；
Step 2: mixed homogeneously with alumina powder jointed by organic binder bond, organic binder bond proportion is 5%-20%；
Step 3: alumina slurry is injected mould；
Step 4: mould being put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature controls
800℃；
Step 5: the demoulding after preliminary sintering, uses plane pressurization to ensure profile, then carries out high temperature static pressure sintering,
Described high temperature static pressure sintering temperature controls at 1200 DEG C-2000 DEG C；
Step 6: after having sintered, grinds smooth by injecting hole, ceramic substrate and pipe clamp or pedestal integral type knot
Structure completes；
Step 7: to carrying out metalized bottom ceramic substrate, make to adhere to securely bottom ceramic substrate one layer
Metallic film；
Step 8: utilize described metallic film to be welded and fixed with die array by ceramic substrate.
Manufacture method the most according to claim 9, it is characterised in that: described aluminium oxide selects 93-99
Any one in aluminium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610389976.1A CN106024732B (en) | 2016-05-31 | 2016-05-31 | A kind of production method of device for temperature control |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610389976.1A CN106024732B (en) | 2016-05-31 | 2016-05-31 | A kind of production method of device for temperature control |
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| CN106024732A true CN106024732A (en) | 2016-10-12 |
| CN106024732B CN106024732B (en) | 2018-05-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993066A (en) * | 2021-04-16 | 2021-06-18 | 国开启科量子技术(北京)有限公司 | Refrigeration system for photoelectric device and manufacturing method thereof |
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|---|---|
| CN106024732B (en) | 2018-05-15 |
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