CN106018527B - GaN biosensor and production method with integrated form solid film Pt reference electrode - Google Patents
GaN biosensor and production method with integrated form solid film Pt reference electrode Download PDFInfo
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- CN106018527B CN106018527B CN201610326546.5A CN201610326546A CN106018527B CN 106018527 B CN106018527 B CN 106018527B CN 201610326546 A CN201610326546 A CN 201610326546A CN 106018527 B CN106018527 B CN 106018527B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
Abstract
The invention discloses a kind of GaN biosensors and production method with integrated form solid film Pt reference electrode, integrated form solid film Pt reference electrode proposed by the present invention based on GaN biosensor is compared with the current external Pt reference electrode of GaN biosensor, electrode position is fixed, it is made of microelectronic technique, reference electrode precision is higher, and it is made simultaneously with GaN device so that low manufacture cost, integrated level height, are easy to carry out miniaturization and the realization of portable GaN biosensor.
Description
Technical field
The invention belongs to semiconductor biosensor fields, and in particular to one kind has integrated form solid film Pt reference electricity
The GaN biosensor and production method of pole.
Background technique
As the third generation semiconductor material of silicon substitute, there is GaN anticorrosive chemistry, high temperature high power, high electronics to move
The features such as shifting rate, and energy and GaN base light emitting, deep ultraviolet detector, wireless sensing chip etc. are compatible, are very suitable for height
The sensor application of reliability.
The conventional structure of GaN HEMT device, on the hetero-junctions made of AlGaN/GaN epitaxial material, due to piezoelectricity pole
Change and spontaneous polarization effect, meeting form one layer electronegative two in barrier layer buffer layer junction, the position of closer buffer layer
Dimensional electron gas, due to the relationship of energy band, two-dimensional electron gas has certain confinement.Therefore, when source-drain electrode is there are when voltage difference,
Electronics will be mobile according to electric potential direction on the two-dimensional surface, forms electric current.Meanwhile certain negative voltage is applied by grid,
Electronics can be exhausted, the switch control of device is obtained.
It is increasingly becoming one in recent years as the Measurement for Biotechnique of sensing unit using GaN field effect transistor (HEMT)
A hot issue.The technology incudes the electric signal of biological substance generation using HEMT device bare gate, and then generates source-drain current
Variation sensed, have and detect portable, low in cost feature quick, simple, small in size, very meet biology and
The demand that medical domain quickly detects.Each research institution in the current world field GaN has all carried out biomedical context of detection
Joint study.Its bio-sensing carried out research covers many aspects, including the detection of gas detection, pH value, DNA fragmentation inspection
It surveys, by detecting the disease detection of the progress such as specific enzyme, protein, antigen in blood, urine, saliva and histocyte,
With boundless research field.
In AlGaN/GaN HEMT structure, the interface of AlGaN/GaN HEMT device will form the table of two-dimensional electron gas
Face channel, the two-dimensional electron gas in potential well are controlled by grid voltage, and the grid of AlGaN/GaN HEMT uses molecule film generation
It replaces, when device works, specificity knot occurs with the object to be measured antibody being fixed on molecule film for the target to be measured of introducing
It closes, molecule film surface charge is caused to change, so as to cause the change of two-dimensional electron gas in potential well, and two dimension is electric
The change of sub- gas concentration will lead to the variation of electric current between the source electrode (source) of transistor and drain electrode (drain), therefore can lead to
The variation of overcurrent introduces the concentration variation of target to be measured to detect.It is external by placing one in device grids buffer
Reference electrode, reference electrode current potential is fixed on the grid subthreshold region of device, while carrying out electricity by conductive buffer
Pressure conduction, makes gate voltage modulation in sub-threshold region, so that sensor be made to obtain maximum detection sensitivity.
In ideal current-voltage relation, when gate source voltage is less than or equal to threshold voltage, leakage current is zero.And in reality
In testing, work as VGS≤VTWhen leakage current be known as subthreshold current.As shown in formula 1, in sub-threshold status, leakage current IdWith grid
Source voltage VGSIt has exponent relation.And in linear zone, leakage current Id and gate source voltage VGSIt is in a linear relationship.Formula 1 and 2 is as follows.
Wherein μ refers to that carrier mobility refers to carrier capacitor, here CbarrterRefer to quantum capacitance, L and W are respectively referred to for grid length
And grid width, kBFor Boltzmann constant, T refers to that absolute temperature, q refer to charge.Ideally, every change 60mV of grid voltage or so will
Cause the change of subthreshold current an order of magnitude.Transducer sensitivity S is defined as
Therefore, to obtain peak response, device work should be made in sub-threshold status.
2011, Xuejin Wen, et al., which are reported, made AlGaN/GaN HEMT device using external Pt reference electrode
It works in sub-threshold status so that the sensitivity of measurement Streptavidin is improved.2011, Mastura Shafinaz
Zainal Abidin, et al. report the chemical sensor with AlGaN/GaN HEMT device measurement pH value, use Ag/
The external reference electrode of AgCl biases to realize reference electrode to grid, the external reference electrode of Ag/AgCl is fixed on polytetrafluoro
In ethylene beaker, and AlGaN/GaN HEMT device is placed in one.Document is using similar external reference electrode method.
In the application of GaN biochemical sensor, a method of make device work in sub-threshold status, is slow in device grids
An external reference electrode is placed in fliud flushing.The electrode material of the structure of common Ag/AgCl external electrode generally uses Ag/
The materials such as AgCl or Pt.There is more difficult fixation in common reference electrode, and electrode position is unstable easily moves, and be not easy to realize portable
The shortcomings that with the production and application of miniaturized sensors.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of GaN with integrated form solid film reference electrode
Biosensor and production method overcome the current external reference electrode of GaN biosensor and install and use complexity, be not easy to realize
The shortcomings that portable and miniaturized application.
In order to achieve the above object, the production side of the GaN biosensor with integrated form solid film Pt reference electrode
Method, comprising the following steps:
Step 1, on the clean substrate containing GaN buffer layer, AlGaN potential barrier and substrate, photoetching development goes out table top
Area of isolation forms the isolation of device using the method for etching or ion implanting；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, using the method for electron beam evaporation
Ohmic metal layer is obtained, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, and annealing forms alloy, obtains Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electricity of device source-drain electrode on ohmic metal layer and on substrate
Pole lead areas, vapor deposition Ni/Au interconnect metal, and remove, and obtains the interconnection metal and reference electrode of GaN device source-drain electrode
Lead metal；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, sputtering 300~1000nm thickness
Reference electrode Pt metal, and remove, form reference electrode metal；
Step 5, in AlGaN potential barrier, the Si of ohmic metal layer and interconnection metallic surface deposit 60-100nm thickness3N4
As passivation layer；
Step 6 carries out photoetching development on the passivation layer, and etches Si3N4, expose gate region, the reference electrode of GaN device
The source-drain electrode lead-out area and reference electrode lead-out area of induction region, device；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, and finally obtaining has collection
The GaN biosensor of accepted way of doing sth solid film reference electrode.
In the step 1, it is preferred that barrier layer can also use InAlN barrier layer or AlN barrier layer.
In the step 2, alloy is formed in 830 degree of rapid thermal annealings.
In the step 3, metal is interconnected using electron beam evaporation technique vapor deposition Ni/Au, and shelled with lift-off technique
From.
In the step 4, sputtering technology is used when depositing Pt.
In the step 5, deposit passivation layer uses PECVD method.
In the step 6, etching is using ICP etching method or RIE etching method or wet etching method.
GaN biosensor with integrated form solid film Pt reference electrode, including with GaN buffer layer, AlGaN gesture
The substrate of barrier layer and substrate, is provided with ohmic metal layer in AlGaN potential barrier, has interconnection gold on ohmic metal layer and on substrate
Belong to, sputtering has a reference electrode Pt metal on the interconnection metal on substrate, GaN buffer layer, AlGaN potential barrier, ohmic metal layer and
Interconnection metal surface is deposited with passivation layer, and gate region, the reference electrode induction region, source and drain electricity of GaN device are exposed on passivation layer
Pole lead-out area and reference electrode lead-out area have PDMS test sample slot on substrate and passivation layer.
Compared with prior art, the integrated form solid-state Pt film reference electricity proposed by the present invention based on GaN biosensor
Compared with the current external Pt reference electrode of GaN biosensor, electrode position is fixed, and is made of microelectronic technique, reference for pole
Electrodes Du Genggao, and making simultaneously with GaN device so that low manufacture cost, integrated level is high is easy to carry out miniaturization and just
Take the realization of formula GaN biosensor.
Detailed description of the invention
Fig. 1 is the schematic diagram of step 1 of the present invention；
Fig. 2 is the schematic diagram of step 2 of the present invention；
Fig. 3 is the schematic diagram of step 3 of the present invention；
Fig. 4 is the schematic diagram of step 4 of the present invention；
Fig. 5 is the schematic diagram of step 5 of the present invention；
Fig. 6 is the schematic diagram of step 6 of the present invention；
Fig. 7 is the schematic diagram of step 7 of the present invention；
Fig. 8 is device overall work schematic diagram of the invention.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples.
Referring to Fig. 1 to Fig. 8, the production method of the GaN biosensor with integrated form solid film Pt reference electrode, packet
Include following steps:
Step 1, on the clean substrate containing GaN buffer layer, AlGaN potential barrier and substrate, photoetching development goes out table top
Area of isolation forms the isolation of device using the method for etching or ion implanting；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, using the method for electron beam evaporation
Ohmic metal layer is obtained, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy in 830 degree of short annealings, obtains
Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electricity of device source-drain electrode on ohmic metal layer and on substrate
The lead areas of pole interconnects metal using electron beam evaporation technique vapor deposition Ni/Au, and is removed with lift-off technique, obtains GaN
The lead metal of the interconnection metal and reference electrode of device source-drain electrode；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, and sputtering technology deposition 300~
The reference electrode Pt metal of 1000nm thickness, and remove, form reference electrode metal；
Step 5 deposits 60- in AlGaN potential barrier, ohmic metal layer and interconnection metallic surface using PECVD method
The Si of 100nm thickness3N4As passivation layer；
Step 6 carries out photoetching development on the passivation layer, and using ICP etching method or RIE etching method or wet etching method
Etch Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area and ginseng of reference electrode induction region and device
Than electrode lead-out area；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, and finally obtaining has collection
The GaN biosensor of accepted way of doing sth solid film reference electrode.
Preferably, barrier layer can also use InAlN barrier layer or AlN barrier layer.
Referring to Fig. 8, the GaN biosensor with integrated form solid film Pt reference electrode, including buffered with GaN
The substrate of layer, AlGaN potential barrier and substrate, is provided with ohmic metal layer in AlGaN potential barrier, on ohmic metal layer and on substrate
With interconnection metal, sputtering has reference electrode Pt metal, GaN buffer layer, AlGaN potential barrier, Europe on the interconnection metal on substrate
Nurse metal layer and interconnection metal surface are deposited with passivation layer, and gate region, the reference electrode induction of GaN device are offered on passivation layer
Region, source-drain electrode lead-out area and reference electrode lead-out area have PDMS test sample slot on substrate and passivation layer.
Embodiment 1:
Step 1, on the clean substrate containing GaN buffer layer, AlGaN potential barrier and substrate, photoetching development goes out table top
Area of isolation forms the isolation of device using the method for etching or ion implanting；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, using the method for electron beam evaporation
Ohmic metal layer is obtained, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy in 830 degree of short annealings, obtains
Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electricity of device source-drain electrode on ohmic metal layer and on substrate
The lead areas of pole interconnects metal using electron beam evaporation technique vapor deposition Ni/Au, and is removed with lift-off technique, obtains GaN
The lead metal of the interconnection metal and reference electrode of device source-drain electrode；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, and it is thick that sputtering technology deposits 300nm
Reference electrode Pt metal, and remove, form reference electrode metal；
Step 5 deposits 60- in AlGaN potential barrier, ohmic metal layer and interconnection metallic surface using PECVD method
The Si of 100nm thickness3N4As passivation layer；
Step 6 carries out photoetching development on the passivation layer, and using ICP etching method or RIE etching method or wet etching method
Etch Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area and ginseng of reference electrode induction region and device
Than electrode lead-out area；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, and finally obtaining has collection
The GaN biosensor of accepted way of doing sth solid film reference electrode.
Embodiment 2:
Step 1, on the clean substrate containing GaN buffer layer, InAlN barrier layer and substrate, photoetching development goes out table top
Area of isolation forms the isolation of device using the method for etching or ion implanting；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, using the method for electron beam evaporation
Ohmic metal layer is obtained, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy in 830 degree of short annealings, obtains
Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electricity of device source-drain electrode on ohmic metal layer and on substrate
The lead areas of pole interconnects metal using electron beam evaporation technique vapor deposition Ni/Au, and is removed with lift-off technique, obtains GaN
The lead metal of the interconnection metal and reference electrode of device source-drain electrode；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, and sputtering technology deposits 1000nm
Thick reference electrode Pt metal, and remove, form reference electrode metal；
Step 5 deposits 60- in AlGaN potential barrier, ohmic metal layer and interconnection metallic surface using PECVD method
The Si of 100nm thickness3N4As passivation layer；
Step 6 carries out photoetching development on the passivation layer, and using ICP etching method or RIE etching method or wet etching method
Etch Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area and ginseng of reference electrode induction region and device
Than electrode lead-out area；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, and finally obtaining has collection
The GaN biosensor of accepted way of doing sth solid film reference electrode.
Embodiment 3:
Step 1, on the clean substrate containing GaN buffer layer, AlN barrier layer and substrate, photoetching development go out table top every
From region, the isolation of device is formed using the method for etching or ion implanting；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, using the method for electron beam evaporation
Ohmic metal layer is obtained, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy in 830 degree of short annealings, obtains
Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electricity of device source-drain electrode on ohmic metal layer and on substrate
The lead areas of pole interconnects metal using electron beam evaporation technique vapor deposition Ni/Au, and is removed with lift-off technique, obtains GaN
The lead metal of the interconnection metal and reference electrode of device source-drain electrode；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, and it is thick that sputtering technology deposits 650nm
Reference electrode Pt metal, and remove, form reference electrode metal；
Step 5 deposits 60- in AlGaN potential barrier, ohmic metal layer and interconnection metallic surface using PECVD method
The Si of 100nm thickness3N4As passivation layer；
Step 6 carries out photoetching development on the passivation layer, and using ICP etching method or RIE etching method or wet etching method
Etch Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area and ginseng of reference electrode induction region and device
Than electrode lead-out area；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, and finally obtaining has collection
The GaN biosensor of accepted way of doing sth solid film reference electrode.
Claims (6)
1. with integrated form solid film Pt reference electrode GaN biosensor production method, which is characterized in that including with
Lower step:
Step 1, on the clean substrate containing GaN buffer layer, AlGaN potential barrier and substrate, photoetching development goes out device isolation
Region forms the isolation of device using etching or ion injection method；
Step 2, photoetching development goes out ohmic contact regions on not doing the region being isolated, is obtained using the method for electron beam evaporation
Ohmic metal layer, ohmic metal layer use Ti/Al/Ni/Au four-layer structure, and annealing forms alloy, obtain Ohmic contact；
Step 3, photoetching development goes out the interconnection area and reference electrode of device source-drain electrode on ohmic metal layer and on substrate
Lead areas, vapor deposition Ni/Au interconnect metal, using lift-off technique and remove, and obtain the interconnection gold of GaN device source-drain electrode
Belong to the lead metal with reference electrode；
Step 4, photoetching development goes out reference electrode induction region on reference electrode lead, sputters the reference of 300~1000nm thickness
Electrode metal Pt, and remove, form reference electrode metal；
Step 5, in the Si of substrate surface deposit 60-100nm thickness3N4As passivation layer；
Step 6 carries out photoetching development on the passivation layer, is etched using ICP etching method or RIE etching method or wet etching method
Si3N4, gate region, reference electrode induction region, the interconnection metal lead-out area of device and the reference electrode for exposing GaN device draw
Region out；
Step 7 is carried out the encapsulation of device using PDMS, produces sensor test sample slot, finally obtain with integrated form
The GaN biosensor of solid film reference electrode.
2. the production side of the GaN biosensor according to claim 1 with integrated form solid film Pt reference electrode
Method, which is characterized in that in the step 1, barrier layer can also replace AlGaN gesture using InAlN barrier layer or AlN barrier layer
Barrier layer.
3. the production side of the GaN biosensor according to claim 1 with integrated form solid film Pt reference electrode
Method, which is characterized in that in the step 2, form alloy in 830 degree of rapid thermal annealings.
4. the production side of the GaN biosensor according to claim 1 with integrated form solid film Pt reference electrode
Method, which is characterized in that in the step 4, use sputtering technology when depositing Pt.
5. the production side of the GaN biosensor according to claim 1 with integrated form solid film Pt reference electrode
Method, which is characterized in that in the step 5, deposit passivation layer uses PECVD method.
6. the GaN bio-sensing with integrated form solid film Pt reference electrode of production method production described in claim 1
Device, which is characterized in that including the substrate with GaN buffer layer, AlGaN potential barrier and substrate, be provided with Europe in AlGaN potential barrier
Nurse metal layer has interconnection metal on ohmic metal layer and on substrate, sputtering has reference electrode golden on the interconnection metal on substrate
Belong to Pt, substrate surface is deposited with passivation layer, and gate region, the reference electrode induction region, source and drain electricity of GaN device are exposed on passivation layer
Pole lead-out area and reference electrode lead-out area have PDMS test sample slot on substrate and passivation layer.
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| CN113533481A (en) * | 2021-07-13 | 2021-10-22 | 西湖大学 | Metal oxide interface engineering-based field effect transistor, pH sensor and preparation method thereof |
| CN114624302B (en) * | 2022-03-28 | 2024-01-26 | 湘潭大学 | PH sensor with high sensitivity on-chip integrated pseudo-reference grid and preparation method thereof |
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| ES2358938B1 (en) * | 2009-11-05 | 2011-12-30 | Centro De Estudios E Investigaciones Tecnicas De Guipuzcoa (Ceitg) | PSEUDO-ELECTRODE OF REFERENCE OF SLIM FILM AND PROCEDURE FOR ITS MANUFACTURE. |
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