CN106014854A - Wind turbine blade auxiliary heating device used in electric power field - Google Patents
Wind turbine blade auxiliary heating device used in electric power field Download PDFInfo
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- CN106014854A CN106014854A CN201610589131.7A CN201610589131A CN106014854A CN 106014854 A CN106014854 A CN 106014854A CN 201610589131 A CN201610589131 A CN 201610589131A CN 106014854 A CN106014854 A CN 106014854A
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- blade
- hkust
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 27
- 238000010248 power generation Methods 0.000 claims description 25
- 239000010408 film Substances 0.000 description 170
- 229910052710 silicon Inorganic materials 0.000 description 98
- 239000010703 silicon Substances 0.000 description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 97
- 239000007789 gas Substances 0.000 description 83
- 239000003570 air Substances 0.000 description 71
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 70
- 239000013148 Cu-BTC MOF Substances 0.000 description 64
- 239000000758 substrate Substances 0.000 description 63
- 238000012360 testing method Methods 0.000 description 44
- 229920000767 polyaniline Polymers 0.000 description 43
- 238000001514 detection method Methods 0.000 description 40
- 239000001257 hydrogen Substances 0.000 description 39
- 229910052739 hydrogen Inorganic materials 0.000 description 39
- 239000000243 solution Substances 0.000 description 37
- 229910021529 ammonia Inorganic materials 0.000 description 35
- 238000002360 preparation method Methods 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 30
- 238000000034 method Methods 0.000 description 29
- 238000004528 spin coating Methods 0.000 description 26
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 24
- 230000035945 sensitivity Effects 0.000 description 23
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 22
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 22
- 238000001755 magnetron sputter deposition Methods 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 150000002431 hydrogen Chemical class 0.000 description 16
- 238000013112 stability test Methods 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 238000007664 blowing Methods 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 230000004044 response Effects 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 231100001261 hazardous Toxicity 0.000 description 14
- 239000012621 metal-organic framework Substances 0.000 description 14
- 239000002360 explosive Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 239000010413 mother solution Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000012047 saturated solution Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 8
- 239000002910 solid waste Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 231100000331 toxic Toxicity 0.000 description 7
- 230000002588 toxic effect Effects 0.000 description 7
- 206010070834 Sensitisation Diseases 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
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- 231100000614 poison Toxicity 0.000 description 6
- 230000007096 poisonous effect Effects 0.000 description 6
- 230000008313 sensitization Effects 0.000 description 6
- 239000012923 MOF film Substances 0.000 description 5
- 239000012491 analyte Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 238000001027 hydrothermal synthesis Methods 0.000 description 5
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 239000010813 municipal solid waste Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
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- 238000006555 catalytic reaction Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
- F03D—WIND MOTORS
- F03D1/00—Wind motors with rotation axis substantially parallel to the air flow entering the rotor
- F03D1/06—Rotors
- F03D1/065—Rotors characterised by their construction elements
- F03D1/0675—Rotors characterised by their construction elements of the blades
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F05—INDEXING SCHEMES RELATING TO ENGINES OR PUMPS IN VARIOUS SUBCLASSES OF CLASSES F01-F04
- F05B—INDEXING SCHEME RELATING TO WIND, SPRING, WEIGHT, INERTIA OR LIKE MOTORS, TO MACHINES OR ENGINES FOR LIQUIDS COVERED BY SUBCLASSES F03B, F03D AND F03G
- F05B2260/00—Function
- F05B2260/20—Heat transfer, e.g. cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
- Y02E10/72—Wind turbines with rotation axis in wind direction
Abstract
The invention discloses a wind turbine blade auxiliary heating device used in the electric power field. The device comprises a hot-air blower disposed on one end of a web; the hot-air blower is connected with a first heating tube, a second heating tube and a third heating tube; the three heating tubes are arranged to pass through a hot-air blower baffle disposed at the root of a blade, and are extended from the hot-air blower to the inner side of the blade; a blade cavity is formed at the edge of the blade; and an air detector is disposed in the blade cavity.
Description
Technical field
The present invention relates to power domain, be more particularly to a kind of wind power generation blade auxiliary for power domain and add
Thermal.
Background technology
During wind-power electricity generation, toxic, flammability, explosivity, radioactivity, corrosivity etc. may be contained
Harmful gas or such hazardous gas can be produced, to the testing requirement sensitivity of such hazardous gas, steady
Qualitative grade is higher.
The method of conventional detected gas is to gather gas at the scene, is stored in the sample devices of cleaning, then
Deliver to laboratory, use the composition in the detected gas such as various instrument, such as GC, GC/MS or LC/MS
And the problem such as quantitatively, but, above-mentioned detection method not only needs substantial amounts of sample collector to carry out spot sampling,
Consume substantial amounts of manpower and materials, and in sample transportation, be frequently present of contaminated problem, send
Gaseous sample to laboratory can not react the problem of necessary being at all, maybe can not monitor it to environmental functional
Hazardness.
Summary of the invention
It is an object of the invention to avoid weak point of the prior art and provide a kind of for power domain
Wind power generation blade assisted heating device.
The purpose of the present invention is achieved through the following technical solutions: a kind of wind power generation blade for power domain
Assisted heating device, it is characterised in that include the hot-air blower being positioned over web one end；Described hot-air blower connects
Have the first heat pipes, the second heat pipes and the 3rd heat pipes and described first heat pipes, described
Two heat pipes, described 3rd heat pipes are by being arranged at a hot-air blower baffle plate of root of blade；Described
First heat pipes, described second heat pipes, described 3rd heat pipes extend to leaf from described hot-air blower
In sheet；Described blade edge is that hollow state forms blade cavity, is placed with gas inspection in described blade cavity
Survey device.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the present invention
Embodiment, and for explaining the principle of the present invention together with description.
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment.
Fig. 4 is the preparation technology flow process of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Block diagram.
Wherein: 1-silicon chip, 2-silicon nitride layer, 3-Cr film layer, 4-PANI film, 5-Ni film, 6-HKUST-1
Film, 7-BSP film, 8-hot-air blower, 9-the first heat pipes, 10-sensitive blocks, 11-detector, 12-
Web, 13-the second heat pipes, 14-the 3rd heat pipes, 15-hot-air blower baffle plate, 16-blade cavity.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Following retouches
Stating when relating to accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.
Embodiment described in following exemplary embodiment does not represent all embodiment party consistent with the present invention
Formula.On the contrary, they only with describe in detail in appended claims, the present invention some in terms of mutually one
The example of the apparatus and method caused.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be mechanically connected or electrically connect, it is also possible to be two units
Connection within part, can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, for this area
Those of ordinary skill for, the concrete meaning of above-mentioned term can be understood as the case may be.
Along with economic fast development and industrial expansion, not only can produce in industry manufactures production process
Various waste gas, the most also can produce various gas, these gas at the various apparatuses made
The generation of body not only can affect the use of instrument itself, and can become the potential threat of environmental pollution.
Therefore, it is necessary to look for a kind of equipment that can monitor the gas that various apparatus in use produces,
Again can in time feedback monitoring to the gas sensor of gas data.
The method of conventional detected gas is to gather gas at the scene, is stored in the sample devices of cleaning, then
Deliver to laboratory, use the composition in the detected gas such as various instrument, such as GC, GC/MS or LC/MS
And the problem such as quantitatively, but, above-mentioned detection method not only needs substantial amounts of sample collector to carry out spot sampling,
Consume substantial amounts of manpower and materials, and in sample transportation, be frequently present of contaminated problem, send
To laboratory gaseous sample at all can not reactor tool exist problem, maybe can not monitor it to environmental functional
Hazardness.
In existing report, there is employing inorganic material film and made gas detection sensor to detect gas
Body, but the membrane material that above-mentioned gas sensor there is problems in that employing is short for service life, and at ring
The when that in border, humidity being bigger, the most malfunctioning, it is impossible to well to play its effect.Therefore, need badly and find one
Planting can be sensitive to hydrone on a large scale, can monitor and separate again the material of measured target gas station in time.
Metal-organic framework materials (MOFs) is the bonding side by coordinate bond by metal ion or metal cluster
Formula is combined formation with some organic ligands, due to metal ion or the difference of organic ligand, can represent
Go out various topological structures.MOFs self has that pore size is adjustable, specific surface area advantages of higher, and it is in gas-liquid
The aspects such as separation, catalysis, optical, electrical, gas sensing have potential using value.Wherein HKUST-1 is one
Planting typical metal-organic framework materials, it is very sensitive to hydrogen, when it contacts with hydrogen, and HKUST-1
Skeleton flexibility can change owing to sucking different guest molecules in duct, this change can cause again
The change of its unit cell, and the change of unit cell eventually results in the change of HKUST-1 membrane resistance, by measuring electricity
Resistance can be sensitive react hydrogen to be measured concentration change.
The present invention, based on resistor-type HKUST-1 membrane material, designs hydrogen gas sensor, uses Cr film as quick
The interdigital electrode layer of sense module, Ni film is as the catalyst of HKUST-1 film forming.
The invention will be further described with the following Examples.
Application scenarios 1
Fig. 1 is to assist according to a kind of wind power generation blade for power domain shown in an exemplary embodiment
Heater, it is characterised in that include the hot-air blower 8 being positioned over web 12 one end；Described hot-air blower 8 is even
It is connected to first heat pipes the 9, second heat pipes 13 and the 3rd heat pipes 14 and described first heat pipes
9, described second heat pipes 13, described 3rd heat pipes 14 are by being arranged at a heat of root of blade
Blower fan baffle plate 15；Described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 extend in blade from described hot-air blower 8；Described blade edge is that hollow state forms blade cavity 16,
In described blade cavity, 16 are placed with detector 11.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Preferably, described hot-air blower baffle plate 15 is provided with described first heat pipes 9, described second add
The aperture that heat pipe part 13, described 3rd heat pipes 14 match.
Preferably, the front end of described second heat pipes 13 is apart from rear end 80cm～85cm of described web 12.
Preferably, the front end of described second heat pipes 13 is apart from the rear end 83cm of described web 12.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 along longitudinal spaced set.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 edges are longitudinally apart from one another by 10cm.
Fig. 2 is the structural representation of the detector 11 used according to the present invention shown in an exemplary embodiment
Figure.As in figure 2 it is shown, described detector 11 includes sensitive blocks 10 and data read module 20, institute
State sensitive blocks 10 to be placed in the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, as
Shown in Fig. 3, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6
With BSP film 7；Described silicon chip substrate includes silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2
As insulating barrier, Cr film layer 3 is used as interdigital electrode layer；Described Ni film 5 uses magnetron sputtering method to prepare, thick
Degree is 10nm；The thickness of described HKUST-1 film 6 is about 2～60 μm；Described Cr film layer 3 is read with data
Delivery block 20 is conductively connected.
Fig. 4 is the preparation technology flow chart element of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Figure, as shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water surpass
Sound cleans, and ultrasonic time is 30min, then dries up by nitrogen gun；Cleaned silicon chip is put into PECVD
Equipment, deposits one layer of silicon nitride film, thickness about 200nm；By Wafer Cleaning, spin coating one layer photoetching glue,
Photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；It is then covered by interdigital
Electrode mask version, exposes 7s, and develop 65s；Putting in magnetic control sputtering device, magnetron sputtering C r film, as fork
Referring to electrode layer, thickness is 500nm, washes silicon chip surface photoresist subsequently；
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use
Flame heating, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, with
Form the microcavity of 2 tapers；Micro-cavity structure enhances the sensitivity of sensitive blocks, and then this detection equipment
Power of test is strengthened so that it is extremely strong to the absorbability of hydrogen；
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method
Saturated solution is spun to the surface of the silicon chip substrate processed through step 2, and the speed of spin coating is 3000rpm,
Spin coating 10s, is then dried overnight in the baking oven of 100 DEG C, obtains PANI film on silicon chip substrate surface；Adopt
Type gas sense module due to based on resistive type metal-organic framework materials, and metal-organic framework materials
Film forming, on polyaniline film, owing to polyaniline has strong electric conductivity, therefore, further enhancing gas
The sensitivity of sensing module, and then make this detection equipment that the sensitivity of gas significantly to be strengthened；
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3Pa, magnetron sputtering 10nm
Ni film 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g, in another small beaker, is completely dissolved to obtain nothing with 19.2mL ethanol
Color clear solution, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving,
By H3BTC solution pours Cu (NO into along walls of beaker3)2·3H2O solution stirs half an hour, obtains azury
HKUST-1 mother solution；The HKUST-1 mother solution prepared and silicon chip substrate are placed in the reactor of 50mL
In, utilize hydrothermal synthesis method to synthesize MOF film, reaction temperature is 135 DEG C, after reacting 2 days, will with tweezers
Silicon chip substrate is rinsed several times repeatedly with methanol after taking out, and dries 1 hour in 100 DEG C, in silicon chip substrate
To blue HKUST-1 film, the thickness of HKUST-1 film is about 2～60 μm；Owing to using Ni layer conduct
The catalyst of metal-organic framework materials film forming, the Ni film on PANI surface can with HKUST-1 film reaction, because of
This, on the one hand promote the film forming of HKUST-1, on the other hand improves PANI film and HKUST-1 film
Binding ability, makes to combine film layer and has higher stability, so that the gas sensing being thus prepared from
The sensing performance of module is more stable；
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) adds
Enter to mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, will
Photochromic compounds BSP (0.057mmol) joins in solution A, and dark place is stirred 1 hour；
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is
5000rpm, the rotation time is 5 seconds；Due in the preparation process of the gas sensitization module used at it,
Its surface adds the BSP photochromic molecule with fluorescence property, and this photochromic molecule, can be under electromagnetism excitation
Exist in inflammable and explosive hazardous environment and send fluorescence, make this detection equipment be capable of qualitative and quantitative inspection
Survey environment and include that hydrogen, at interior flammable explosive gas, can make the probability of the situation of causing danger reduce；
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, down, sensitive thin film part is towards ventilative little for wafer sections
Hole is placed, and metal wire connects interdigital electrode and data read module on silicon chip.Making due to this sensitive blocks
Process is the most simple and convenient and quick, can save substantial amounts of man power and material, have large-scale industrial production
Potentiality.
Experiment test:
(1) experiments Hydrogen: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, stream
Speed is 1000ml/min, and load resistance is 200 Ω；During blowing air, gas sensor signal value is O；Logical
Entering 1ppm hydrogen, gas sensor signal value changes to rapidly 1.0mV in 10s, and believes in 20s
Number value tends towards stability；Being passed through air after 1min, signal value returns to 0 value in 5s and tends to steady in 30s
Fixed；Through 2000 stability tests, its data variation rate is less than 10%；Test result shows that this solid gives up
Gurry detection equipment has good response performance to hydrogen.
(2) ammonia experiment: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
100ppm ammonia, gas sensor signal value changes to rapidly 5.0mV in 10s, and in 1min
Signal value tends towards stability；Being passed through air after 5min, signal value returns to 0 value and in 10s in 0.5min
Tend towards stability；Through 2000 stability tests, its data variation rate is less than 10%；Test result shows this
Solid waste analyte detection equipment has good response performance to ammonia.
(3) hydrogen sulfide experiment: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is
1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through 0.05
Ppm hydrogen sulfide gas, gas sensor signal value changes to rapidly 3.0mV in 10s, and in 30s
Signal value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 5s and tends to steady in 10s
Fixed；Through 2000 stability tests, its data variation rate is less than 10%；Test result shows that this solid gives up
Gurry detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks has the strongest
Sensitivity and select performance, make this detection equipment that sensitivity and the selectivity of toxic and harmful all to be carried
Height, reduces the risk of production.
Application scenarios 2:
Fig. 1 is to assist according to a kind of wind power generation blade for power domain shown in an exemplary embodiment
Heater, it is characterised in that include the hot-air blower 8 being positioned over web 12 one end；Described hot-air blower 8 is even
It is connected to first heat pipes the 9, second heat pipes 13 and the 3rd heat pipes 14 and described first heat pipes
9, described second heat pipes 13, described 3rd heat pipes 14 are by being arranged at a heat of root of blade
Blower fan baffle plate 15；Described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 extend in blade from described hot-air blower 8；Described blade edge is that hollow state forms blade cavity 16,
In described blade cavity, 16 are placed with detector 11.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Preferably, described hot-air blower baffle plate 15 is provided with described first heat pipes 9, described second add
The aperture that heat pipe part 13, described 3rd heat pipes 14 match.
Preferably, the front end of described second heat pipes 13 is apart from rear end 80cm～85cm of described web 12.
Preferably, the front end of described second heat pipes 13 is apart from the rear end 83cm of described web 12.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 along longitudinal spaced set.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 edges are longitudinally apart from one another by 10cm.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.
As in figure 2 it is shown, described detector 11 includes sensitive blocks 10 and data read module 20, described quick
Sense module 10 is placed in the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, as
Shown in Fig. 3, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6
With BSP film 7；Described silicon chip substrate includes silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2
As insulating barrier, Cr film layer 3 is used as interdigital electrode layer；Described Ni film 5 uses magnetron sputtering method to prepare, thick
Degree is 10nm；The thickness of described HKUST-1 film 6 is about 2～60 μm；Described Cr film layer 3 is read with data
Delivery block 20 is conductively connected.
Fig. 4 is the preparation technology flow chart element of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Figure, as shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water surpass
Sound cleans, and ultrasonic time is 30min, then dries up by nitrogen gun；Cleaned silicon chip is put into PECVD
Equipment, deposits one layer of silicon nitride film, thickness about 210nm；By Wafer Cleaning, spin coating one layer photoetching glue,
Photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；It is then covered by interdigital
Electrode mask version, exposes 7s, and develop 65s；Putting in magnetic control sputtering device, magnetron sputtering C r film, as fork
Referring to electrode layer, thickness is 510nm, washes silicon chip surface photoresist subsequently；
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use
Flame heating, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, with
Form the microcavity of 2 tapers；Micro-cavity structure enhances the sensitivity of sensitive blocks, and then this detection equipment
Power of test is strengthened so that it is extremely strong to the absorbability of hydrogen；
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method
Saturated solution is spun to the surface of the silicon chip substrate processed through step 2, and the speed of spin coating is 3000rpm,
Spin coating 10s, is then dried overnight in the baking oven of 100 DEG C, obtains PANI film on silicon chip substrate surface；
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3Pa, magnetron sputtering 10nm
Ni film 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g, in another small beaker, is completely dissolved to obtain nothing with 19.2mL ethanol
Color clear solution, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving,
By H3BTC solution pours Cu (NO into along walls of beaker3)2·3H2O solution stirs half an hour, obtains azury
HKUST-1 mother solution；The HKUST-1 mother solution prepared and silicon chip substrate are placed in the reactor of 50mL
In, utilize hydrothermal synthesis method to synthesize MOF film, reaction temperature is 135 DEG C, after reacting 2 days, will with tweezers
Silicon chip substrate is rinsed several times repeatedly with methanol after taking out, and dries 1 hour in 100 DEG C, in silicon chip substrate
To blue HKUST-1 film, the thickness of HKUST-1 film is about 2～60 μm；Owing to using Ni layer conduct
The catalyst of metal-organic framework materials film forming, the Ni film on PANI surface can with HKUST-1 film reaction, because of
This, on the one hand the rate of film build of HKUST-1 improves 10%, on the other hand PANI film and HKUST-1 film
Binding ability improve 5%, make to combine film layer and there is higher stability, so that be thus prepared from
The sensing performance of type gas sense module more stable；
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) adds
Enter to mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, will
Photochromic compounds BSP (0.057mmol) joins in solution A, and dark place is stirred 1 hour；
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is
5000rpm, the rotation time is 5 seconds；
Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence
The BSP photochromic molecule of energy, under electromagnetism excitation, can there is inflammable and explosive hazardous environment in this photochromic molecule
In send fluorescence, make this detection equipment be capable of qualitative and quantitative detection environment and include that hydrogen is interior
Flammable explosive gas, can make the probability of the situation of causing danger reduce 10%；
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, down, sensitive thin film part is towards ventilative little for wafer sections
Hole is placed, and metal wire connects interdigital electrode and data read module on silicon chip.Making due to this sensitive blocks
Process is the most simple and convenient and quick, can save substantial amounts of man power and material, have large-scale industrial production
Potentiality.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air and hydrogen, and flow velocity is 1000
Ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through 10ppm
Hydrogen, gas sensor signal value changes to rapidly 3.0mV in 8s, and signal value tends to steady in 30s
Fixed；Being passed through air after 1min, signal value returns to 0 value in 10s and tends towards stability in 1min；Pass through
2000 stability tests, its data variation rate is less than 10%.Test result shows this solid waste analyte detection
Equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
200ppm ammonia, gas sensor signal value changes to rapidly 10.0mV in 5s, and believes in 1min
Number value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 10s and becomes in 0.5min
In stable；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows that this is solid
Body garbage detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
0.1ppm ammonia, gas sensor signal value changes to rapidly 5.0mV, and signal in 30s in 7s
Value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 5s and tends to steady in 0.5min
Fixed；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows that this solid gives up
Gurry detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitivity of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks
5% can be enhanced and select performance to improve 8%, make this detection equipment to the sensitivity of toxic and harmful and
Selectivity is all improved, and reduces the risk of production.
Application scenarios 3:
Fig. 1 is to assist according to a kind of wind power generation blade for power domain shown in an exemplary embodiment
Heater, it is characterised in that include the hot-air blower 8 being positioned over web 12 one end；Described hot-air blower 8 is even
It is connected to first heat pipes the 9, second heat pipes 13 and the 3rd heat pipes 14 and described first heat pipes
9, described second heat pipes 13, described 3rd heat pipes 14 are by being arranged at a heat of root of blade
Blower fan baffle plate 15；Described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 extend in blade from described hot-air blower 8；Described blade edge is that hollow state forms blade cavity 16,
In described blade cavity, 16 are placed with detector 11.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Preferably, described hot-air blower baffle plate 15 is provided with described first heat pipes 9, described second add
The aperture that heat pipe part 13, described 3rd heat pipes 14 match.
Preferably, the front end of described second heat pipes 13 is apart from rear end 80cm～85cm of described web 12.
Preferably, the front end of described second heat pipes 13 is apart from the rear end 83cm of described web 12.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 along longitudinal spaced set.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 edges are longitudinally apart from one another by 10cm.
Fig. 2 is the structural representation of the detector 11 used according to the present invention shown in an exemplary embodiment
Figure.As in figure 2 it is shown, described detector 11 includes sensitive blocks 10 and data read module 20, institute
State sensitive blocks 10 to be placed in the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, as
Shown in Fig. 3, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6
With BSP film 7；Described silicon chip substrate includes silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2
As insulating barrier, Cr film layer 3 is used as interdigital electrode layer；Described Ni film 5 uses magnetron sputtering method to prepare, thick
Degree is 12nm；The thickness of described HKUST-1 film 6 is about 20m；Described Cr film layer 3 and digital independent
Module 20 is conductively connected.
Fig. 4 is the preparation technology flow chart element of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Figure, as shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water surpass
Sound cleans, and ultrasonic time is 30min, then dries up by nitrogen gun；Cleaned silicon chip is put into PECVD
Equipment, deposits one layer of silicon nitride film, thickness about 220nm；By Wafer Cleaning, spin coating one layer photoetching glue,
Photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；It is then covered by interdigital
Electrode mask version, exposes 7s, and develop 65s；Putting in magnetic control sputtering device, magnetron sputtering C r film, as fork
Referring to electrode layer, thickness is 550nm, washes silicon chip surface photoresist subsequently；
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use
Flame heating, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, with
Form the microcavity of 2 tapers；Micro-cavity structure enhances the sensitivity of sensitive blocks, and then this detection equipment
Power of test is strengthened so that it is extremely strong to the absorbability of hydrogen；
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method
Saturated solution is spun to the surface of the silicon chip substrate processed through step 2, and the speed of spin coating is 3000rpm,
Spin coating 10s, is then dried overnight in the baking oven of 100 DEG C, obtains PANI film on silicon chip substrate surface；
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3Pa, magnetron sputtering 10nm
Ni film 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g, in another small beaker, is completely dissolved to obtain nothing with 19.2mL ethanol
Color clear solution, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving,
By H3BTC solution pours Cu (NO into along walls of beaker3)2·3H2O solution stirs half an hour, obtains azury
HKUST-1 mother solution；The HKUST-1 mother solution prepared and silicon chip substrate are placed in the reactor of 50mL
In, utilize hydrothermal synthesis method to synthesize MOF film, reaction temperature is 135 DEG C, after reacting 2 days, will with tweezers
Silicon chip substrate is rinsed several times repeatedly with methanol after taking out, and dries 1 hour in 100 DEG C, in silicon chip substrate
To blue HKUST-1 film, the thickness of HKUST-1 film is about 2～60 μm；Owing to using Ni layer conduct
The catalyst of metal-organic framework materials film forming, the Ni film on PANI surface can with HKUST-1 film reaction, because of
This, on the one hand the rate of film build of HKUST-1 improves 20%, on the other hand PANI film and HKUST-1 film
Binding ability improve 10%, make to combine film layer and there is higher stability so that thus prepare and
The sensing performance of the type gas sense module become is more stable；
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) adds
Enter to mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, will
Photochromic compounds BSP (0.057mmol) joins in solution A, and dark place is stirred 1 hour；
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is
5000rpm, the rotation time is 5 seconds；Due in the preparation process of the gas sensitization module used at it,
Its surface adds the BSP photochromic molecule with fluorescence property, and this photochromic molecule, can be under electromagnetism excitation
Exist in inflammable and explosive hazardous environment and send fluorescence, make this detection equipment be capable of qualitative and quantitative inspection
Survey environment and include that hydrogen, at interior flammable explosive gas, can make the probability of the situation of causing danger reduce
15%；
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, down, sensitive thin film part is towards ventilative little for wafer sections
Hole is placed, and metal wire connects interdigital electrode and data read module on silicon chip.Making due to this sensitive blocks
Process is the most simple and convenient and quick, can save substantial amounts of man power and material, have large-scale industrial production
Potentiality.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, stream
Speed is 1000ml/min, and load resistance is 200 Ω；During blowing air, gas sensor signal value is O；Logical
Entering 50ppm hydrogen, gas sensor signal value changes to rapidly 10.0mV in 5s, and in 1min
Signal value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 40s and becomes in 1min
In stable；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows that this is solid
Body garbage detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
500ppm ammonia, gas sensor signal value changes to rapidly 15.0mV in 2s, and believes in 1min
Number value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 10s and becomes in 1.5min
In stable；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows that this is solid
Body garbage detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through 1
Ppm ammonia, gas sensor signal value changes to rapidly 20.0mV, and signal value in 1min in 3s
Tend towards stability；Being passed through air after 5min, signal value returns to 0 value in 10s and tends towards stability in 1min；
Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this solid waste
Detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitivity of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks
Performance enhancement 10% and select performance to improve 16%, makes this detection equipment sensitivity to toxic and harmful
Degree and selectivity are all improved, and reduce the risk of production.
Application scenarios 4
Fig. 1 is to assist according to a kind of wind power generation blade for power domain shown in an exemplary embodiment
Heater, it is characterised in that include the hot-air blower 8 being positioned over web 12 one end；Described hot-air blower 8 is even
It is connected to first heat pipes the 9, second heat pipes 13 and the 3rd heat pipes 14 and described first heat pipes
9, described second heat pipes 13, described 3rd heat pipes 14 are by being arranged at a heat of root of blade
Blower fan baffle plate 15；Described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 extend in blade from described hot-air blower 8；Described blade edge is that hollow state forms blade cavity 16,
In described blade cavity, 16 are placed with detector 11.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Preferably, described hot-air blower baffle plate 15 is provided with described first heat pipes 9, described second add
The aperture that heat pipe part 13, described 3rd heat pipes 14 match.
Preferably, the front end of described second heat pipes 13 is apart from rear end 80cm～85cm of described web 12.
Preferably, the front end of described second heat pipes 13 is apart from the rear end 83cm of described web 12.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 along longitudinal spaced set.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 edges are longitudinally apart from one another by 10cm.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.
As in figure 2 it is shown, described detector 11 includes sensitive blocks 10 and data read module 20, described quick
Sense module 10 is placed in the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, as
Shown in Fig. 3, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6
With BSP film 7；Described silicon chip substrate includes silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2
As insulating barrier, Cr film layer 3 is used as interdigital electrode layer；Described Ni film 5 uses magnetron sputtering method to prepare, thick
Degree is 20nm；The thickness of described HKUST-1 film 6 is about 40 μm；Described Cr film layer 3 and digital independent
Module 20 is conductively connected.
Fig. 4 is the preparation technology flow chart element of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Figure, as shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water surpass
Sound cleans, and ultrasonic time is 30min, then dries up by nitrogen gun；Cleaned silicon chip is put into PECVD
Equipment, deposits one layer of silicon nitride film, thickness about 300nm；By Wafer Cleaning, spin coating one layer photoetching glue,
Photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；It is then covered by interdigital
Electrode mask version, exposes 7s, and develop 65s；Putting in magnetic control sputtering device, magnetron sputtering C r film, as fork
Referring to electrode layer, thickness is 600nm, washes silicon chip surface photoresist subsequently；
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use
Flame heating, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, with
Form the microcavity of 2 tapers；Micro-cavity structure enhances the sensitivity of sensitive blocks, and then this detection equipment
Power of test is strengthened so that it is extremely strong to the absorbability of hydrogen；
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method
Saturated solution is spun to the surface of the silicon chip substrate processed through step 2, and the speed of spin coating is 3000rpm,
Spin coating 10s, is then dried overnight in the baking oven of 100 DEG C, obtains PANI film on silicon chip substrate surface；
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3Pa, magnetron sputtering 10nm
Ni film 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g, in another small beaker, is completely dissolved to obtain nothing with 19.2mL ethanol
Color clear solution, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving,
By H3BTC solution pours Cu (NO into along walls of beaker3)2·3H2O solution stirs half an hour, obtains azury
HKUST-1 mother solution；The HKUST-1 mother solution prepared and silicon chip substrate are placed in the reactor of 50mL
In, utilize hydrothermal synthesis method to synthesize MOF film, reaction temperature is 135 DEG C, after reacting 2 days, will with tweezers
Silicon chip substrate is rinsed several times repeatedly with methanol after taking out, and dries 1 hour in 100 DEG C, in silicon chip substrate
To blue HKUST-1 film, the thickness of HKUST-1 film is about 2～60 μm；Owing to using Ni layer conduct
The catalyst of metal-organic framework materials film forming, the Ni film on PANI surface can with HKUST-1 film reaction, because of
This, on the one hand the rate of film build of HKUST-1 improves 30%, on the other hand PANI film and HKUST-1 film
Binding ability improve 20%, make to combine film layer and there is higher stability so that thus prepare and
The sensing performance of the type gas sense module become is more stable；
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) adds
Enter to mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, will
Photochromic compounds BSP (0.057mmol) joins in solution A, and dark place is stirred 1 hour；
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is
5000rpm, the rotation time is 5 seconds；Due in the preparation process of the gas sensitization module used at it,
Its surface adds the BSP photochromic molecule with fluorescence property, and this photochromic molecule, can be under electromagnetism excitation
Exist in inflammable and explosive hazardous environment and send fluorescence, make this detection equipment be capable of qualitative and quantitative inspection
Survey environment and include that hydrogen, at interior flammable explosive gas, can make the probability of the situation of causing danger reduce
35%；
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, down, sensitive thin film part is towards ventilative little for wafer sections
Hole is placed, and metal wire connects interdigital electrode and data read module on silicon chip.Making due to this sensitive blocks
Process is the most simple and convenient and quick, can save substantial amounts of man power and material, have large-scale industrial production
Potentiality.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, stream
Speed is 1000ml/min, and load resistance is 200 Ω；During blowing air, gas sensor signal value is O；Logical
Entering 1 00ppm hydrogen, gas sensor signal value changes to rapidly 30.0mV in 3s, and in 20s
Signal value tends towards stability；Being passed through air after 5min, signal value returns to 0 value in 20s and tends in 2min
Stable；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this solid
Garbage detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
1000ppm ammonia, sensor signal value changes to rapidly 10.0mV, and signal value in 2min in 2s
Tend towards stability；Being passed through air after 5min, signal value returns to 0 value in 10s and tends towards stability in 2min；
Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this solid waste
Detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
10ppm ammonia, sensor signal value changes to rapidly 25.0mV, and signal value in 2min in 2s
Tend towards stability；Being passed through air after 5min, signal value returns to 0 value in 40s and tends towards stability in 2min；
Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this solid waste
Detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitivity of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks
Performance enhancement 20% and select performance to improve 30%, makes this detection equipment sensitivity to toxic and harmful
Degree and selectivity are all improved, and reduce the risk of production.
Application scenarios 5
Fig. 1 is to assist according to a kind of wind power generation blade for power domain shown in an exemplary embodiment
Heater, it is characterised in that include the hot-air blower 8 being positioned over web 12 one end；Described hot-air blower 8 is even
It is connected to first heat pipes the 9, second heat pipes 13 and the 3rd heat pipes 14 and described first heat pipes
9, described second heat pipes 13, described 3rd heat pipes 14 are by being arranged at a heat of root of blade
Blower fan baffle plate 15；Described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 extend in blade from described hot-air blower 8；Described blade edge is that hollow state forms blade cavity 16,
In described blade cavity, 16 are placed with detector 11.
A kind of wind power generation blade assisted heating device for power domain that embodiments of the invention provide,
In blade cavity, it is placed with detector, solves the problems referred to above.
Preferably, described hot-air blower baffle plate 15 is provided with described first heat pipes 9, described second add
The aperture that heat pipe part 13, described 3rd heat pipes 14 match.
Preferably, the front end of described second heat pipes 13 is apart from rear end 80cm～85cm of described web 12.
Preferably, the front end of described second heat pipes 13 is apart from the rear end 83cm of described web 12.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 along longitudinal spaced set.
Preferably, described first heat pipes 9, described second heat pipes 13, described 3rd heat pipes
14 edges are longitudinally apart from one another by 10cm.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.
As in figure 2 it is shown, described detector 11 includes sensitive blocks 10 and data read module 20, described quick
Sense module 10 is placed in the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, as
Shown in Fig. 3, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6
With BSP film 7；Described silicon chip substrate includes silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2
As insulating barrier, Cr film layer 3 is used as interdigital electrode layer；Described Ni film 5 uses magnetron sputtering method to prepare, thick
Degree is 30nm；The thickness of described HKUST-1 film 6 is about 60 μm；Described Cr film layer 3 and digital independent
Module 20 is conductively connected.
Fig. 4 is the preparation technology flow chart element of the sensitive blocks used according to the present invention shown in an exemplary embodiment
Figure, as shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water surpass
Sound cleans, and ultrasonic time is 30min, then dries up by nitrogen gun；Cleaned silicon chip is put into PECVD
Equipment, deposits one layer of silicon nitride film, thickness about 400nm；By Wafer Cleaning, spin coating one layer photoetching glue,
Photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；It is then covered by interdigital
Electrode mask version, exposes 7s, and develop 65s；Putting in magnetic control sputtering device, magnetron sputtering C r film, as fork
Referring to electrode layer, thickness is 700nm, washes silicon chip surface photoresist subsequently；
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use
Flame heating, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, with
Form the microcavity of 2 tapers；Micro-cavity structure enhances the sensitivity of sensitive blocks, and then this detection equipment
Power of test is strengthened so that it is extremely strong to the absorbability of hydrogen；
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method
Saturated solution is spun to the surface of the silicon chip substrate processed through step 2, and the speed of spin coating is 3000rpm,
Spin coating 10s, is then dried overnight in the baking oven of 100 DEG C, obtains PANI film on silicon chip substrate surface；
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3Pa, magnetron sputtering 30nm
Ni film 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g, in another small beaker, is completely dissolved to obtain nothing with 19.2mL ethanol
Color clear solution, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving,
By H3BTC solution pours Cu (NO into along walls of beaker3)2·3H2O solution stirs half an hour, obtains azury
HKUST-1 mother solution；The HKUST-1 mother solution prepared and silicon chip substrate are placed in the reactor of 50mL
In, utilize hydrothermal synthesis method to synthesize MOF film, reaction temperature is 135 DEG C, after reacting 2 days, will with tweezers
Silicon chip substrate is rinsed several times repeatedly with methanol after taking out, and dries 1 hour in 100 DEG C, in silicon chip substrate
To blue HKUST-1 film, the thickness of HKUST-1 film is about 2～60 μm；Owing to using Ni layer conduct
The catalyst of metal-organic framework materials film forming, the Ni film on PANI surface can with HKUST-1 film reaction, because of
This, on the one hand the rate of film build of HKUST-1 improves 30%, on the other hand PANI film and HKUST-1 film
Binding ability improve 20%, make to combine film layer and there is higher stability so that thus prepare and
The sensing performance of the type gas sense module become is more stable；
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) adds
Enter to mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, will
Photochromic compounds BSP (0.057mmol) joins in solution A, and dark place is stirred 1 hour；
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is
5000rpm, the rotation time is 5 seconds；Due in the preparation process of the gas sensitization module used at it,
Its surface adds the BSP photochromic molecule with fluorescence property, and this photochromic molecule, can be under electromagnetism excitation
Exist in inflammable and explosive hazardous environment and send fluorescence, make this detection equipment be capable of qualitative and quantitative inspection
Survey environment and include that hydrogen, at interior flammable explosive gas, can make the probability of the situation of causing danger reduce
50%；
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, down, sensitive thin film part is towards ventilative little for wafer sections
Hole is placed, and metal wire connects interdigital electrode and data read module on silicon chip.Making due to this sensitive blocks
Process is the most simple and convenient and quick, can save substantial amounts of man power and material, have large-scale industrial production
Potentiality.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, stream
Speed is 1000ml/min, and load resistance is 200 Ω；During blowing air, gas sensor signal value is O；Logical
Entering 500ppm hydrogen, gas sensor signal value changes to rapidly 50.0mV in 2s, and in 2min
Interior signal value tends towards stability；Being passed through air after 5min, signal value returns to 0 value and in 1min in 2min
Tend towards stability；Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this
Solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
2000ppm ammonia, gas is through 2000 stability tests, and sensor signal value changes to rapidly in 1s
15.0mV, and signal value tends towards stability in 2min；Being passed through air after 5min, signal value is in 20s
Return to 0 value and tend towards stability in 5min；Its data variation rate is less than 10%.Through 2000 stability
Test, its data variation rate is less than 10%.Test result shows that ammonia is had by this solid waste analyte detection equipment
There is good response performance.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, flow velocity
For 1000ml/min, load resistance is 200 Ω；During blowing air, gas sensor signal value is O；It is passed through
100ppm ammonia, sensor signal value changes to rapidly 30.0mV, and signal value in 3min in 1s
Tend towards stability；Being passed through air after 5min, signal value returns to 0 value in 2min and tends to steady in 5min
Fixed；Its data variation rate is less than 10%.Through 2000 stability tests, its data variation rate is less than 10%.
Test result shows that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitivity of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks
Performance enhancement 40%, selects performance to improve 50%, makes this detection equipment sensitivity to toxic and harmful
Degree and selectivity are all improved, and reduce the risk of production.
Connected applications scene 1 to application scenarios 5, the present invention compared with prior art, has the advantage that
1, a kind of wind power generation blade for power domain that embodiments of the invention are provided assists and adds hot charging
Putting, the type gas sense module that this equipment uses is due to based on resistive type metal-organic framework materials, and metal
Organic framework material film forming, on polyaniline film, owing to polyaniline has strong electric conductivity, therefore, enters one
Step enhances the sensitivity of type gas sense module, and then makes this detection equipment obtain the sensitivity of gas greatly
The reinforcement of amplitude.Additionally, due to use Ni layer as the catalyst of metal-organic framework materials film forming, PANI
The Ni film on surface can be with HKUST-1 film reaction, therefore, on the one hand promotes the film forming of HKUST-1, separately
On the one hand improve the binding ability of PANI film and HKUST-1 film, make to combine film layer and there is higher stablizing
Property, so that the sensing performance of the type gas sense module being thus prepared from is more stable.
2, a kind of wind power generation blade for power domain that embodiments of the invention are provided assists and adds hot charging
Put, owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence
The BSP photochromic molecule of energy, under electromagnetism excitation, can there is inflammable and explosive hazardous environment in this photochromic molecule
In send fluorescence, make this detection equipment be capable of qualitative and quantitative detection environment and include that hydrogen is interior
Flammable explosive gas, can make the probability of the situation of causing danger reduce.
3, a kind of wind power generation blade for power domain that embodiments of the invention are provided assists and adds hot charging
Putting, use polyaniline is as substrate liquid spin coating silicon chip substrate, owing to making silicon chip substrate make in preparation process
The structure of similar microcavity, and add the material including BSP, micro-cavity structure enhances sensitive blocks
Sensitivity, and then the power of test of this detection equipment strengthened so that it is extremely strong to the absorbability of hydrogen；
Additionally, also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks has the strongest sensitivity and choosing
Select performance, make this detection equipment that sensitivity and the selectivity of toxic and harmful to be all improved, reduce
The risk produced；Finally, due to the manufacturing process of this sensitive blocks is the most simple and convenient and quick, can save
Substantial amounts of man power and material, has the potentiality of large-scale industrial production, and therefore, embodiments herein is carried
A kind of wind power generation blade assisted heating device for power domain of confession has great promotional value.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than to this
The restriction of bright protection domain, although having made to explain to the present invention with reference to preferred embodiment, this area
It is to be appreciated by one skilled in the art that technical scheme can be modified or equivalent, and
Spirit and scope without departing from technical solution of the present invention.
Claims (6)
1. the wind power generation blade assisted heating device for power domain, it is characterised in that include putting
It is placed in the hot-air blower of web one end；Described hot-air blower connects the first heat pipes, the second heat pipes and the
Three heat pipes and described first heat pipes, described second heat pipes, described 3rd heat pipes pass through
It is arranged at a hot-air blower baffle plate of root of blade；Described first heat pipes, described second heat pipes,
Described 3rd heat pipes extends in blade from described hot-air blower；Described blade edge is that hollow state is formed
Blade cavity, is placed with detector in described blade cavity.
A kind of wind power generation blade assisted heating device for power domain the most according to claim 1,
It is characterized in that, described hot-air blower baffle plate is provided with described first heat pipes, described second add heat pipe
The aperture that part, described 3rd heat pipes match.
A kind of wind power generation blade assisted heating device for power domain the most according to claim 1,
It is characterized in that, the front end of described second heat pipes is apart from rear end 80cm～85cm of described web.
A kind of wind power generation blade assisted heating device for power domain the most according to claim 1,
It is characterized in that, the front end of described second heat pipes is apart from the rear end 83cm of described web.
A kind of wind power generation blade assisted heating device for power domain the most according to claim 1,
It is characterized in that, described first heat pipes, described second heat pipes, described 3rd heat pipes are along vertical
To spaced set.
A kind of wind power generation blade assisted heating device for power domain the most according to claim 1,
It is characterized in that, described first heat pipes, described second heat pipes, described 3rd heat pipes are along vertical
To apart from one another by 10cm.
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| CN106014854B (en) | 2018-11-16 |
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