CN106011791A - Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device - Google Patents
Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device Download PDFInfo
- Publication number
- CN106011791A CN106011791A CN201610530974.XA CN201610530974A CN106011791A CN 106011791 A CN106011791 A CN 106011791A CN 201610530974 A CN201610530974 A CN 201610530974A CN 106011791 A CN106011791 A CN 106011791A
- Authority
- CN
- China
- Prior art keywords
- powder
- layer deposition
- atomic layer
- reaction
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The invention discloses an atomic layer deposition device capable of enabling a powder surface to be evenly coated. The method comprises the following steps: firstly, powder in a reaction cavity is heated, meanwhile, stirring and vacuum pumping are carried out, and cleaning gas is fed in; secondly, vacuum pumping is stopped, the cleaning gas is stopped from being led in, reaction gas is led into the powder, and the stirring reaction is carried out; and thirdly, the reaction gas is stopped from being led in, meanwhile, vacuum pumping is started, and the cleaning gas is led into the powder. The invention further provides the device special for the method. The reaction gas is led into the stirred powder, cleaning is carried out in time after the reaction, circular operation is carried out, uniform coating of the powder surface can be achieved, and maneuverability is good; and the problem that due to the fact that a rigidity contact point exists on the powder and the powder is agglomerated, the surface of the powder cannot be evenly coated is solved, meanwhile, through a large number of micro-nano gas holes distributed in rotating fluidization blades, the reaction gas and the cleaning gas are evenly injected into the whole powder, the reaction time is effectively shortened, and the coating efficiency is improved.
Description
Technical field
The present invention relates to technique for atomic layer deposition field, a kind of apparatus for atomic layer deposition at powder surface uniform coated and method thereof.
Background technology
The dusty material of micro-or nano size, is widely used in the such as field such as battery electrode material, catalyst, if last layer nano-level thin-membrane uniformly can be plated on its surface because showing the physical and chemical performance of many excellences, it will bring more positive effect.Presently mainly utilizing solid phase method, liquid phase method and vapor phase method at micro-nano powder surface coating, but these methods all cannot solve the problems such as uniform coated, thickness accurately control simultaneously.
Technique for atomic layer deposition be a kind of utilize reacting gas material surface replace saturated from absorption concurrent biochemical reaction generate target substance vapor phase chemical vapor deposition technology.Up to the present, Atomic layer deposition method is uniquely can be in big specific surface area material surface uniform coated and the technology accurately controlling thickness, but mostly these application are that material surface is completely exposed aerial situation.
For dusty material, even the Atomic layer deposition method of routine also is difficult at its surface uniform coated, reason mainly has 2 points: first, dusty material there will be contact with each other, the phenomenon such as reunion, the Atomic layer deposition method of existing improvement uses and utilizes air blast to blow afloat powder, make it fluidize, but the shortcoming of which is: under air blast effect, the stability that reacting gas reacts in powder surface adsorption ability and surface all will be greatly affected, the problem that can show membrane thickness unevenness.Second, conventional Atomic layer deposition method all enters source (i.e. input reacting gas and purge gas) outside powder, then free diffusing is utilized, pressurize is spread, reacting gas and purge gas are delivered to inside powder by the modes such as powder fluidising diffusion, but source mode is entered in outside can increase the biggest time cost, the value promotion that this time cost brings more than powder surface atom layer deposition plating, and, when amount of powder increases, the entering source mode the most all cannot completely reacting gas and purge gas be delivered to each region of powder of above-mentioned routine, so yield is the least.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, propose a kind of Atomic layer deposition method at powder surface uniform coated, efficient uniform, easy and simple to handle.
In order to realize foregoing invention purpose, the present invention provides techniques below scheme: a kind of Atomic layer deposition method at powder surface uniform coated, comprises the following steps:
, the powder of reacting by heating intracavity, simultaneously stirring and evacuation, send into purgative gas；
(2), stop evacuation and cut-off and be passed through purgative gas, inside powder, be passed through reaction gas, stirring reaction；
(3), stop being passed through reaction gas, open evacuation simultaneously, inside powder, be passed through purgative gas.
Further, circulation step is (2) with step (3).
Further, repeat step (2) time, be passed through another reaction gas.
The present invention also provides for being exclusively used in the device of said method, its technical scheme is: a kind of apparatus for atomic layer deposition at powder surface uniform coated, source device, reaction chamber, heater, air inlet pipeline and exhaust pipe is entered including motor, rotating porous, rotating porous enters source device and is made up of hollow axle and blade, hollow axle two ends are seal, sidewall is provided with pore, and blade spiral is fixed on hollow axle, and blade is provided with the micropore connected with hollow axle；Rotating porous enters source device and is erected in reaction chamber, and upper end is connected with motor shaft, and air inlet pipeline connects with hollow axle, and exhaust pipe connects with reaction chamber；On heater coating reaction cavity outer wall.
Further, blade is several, arranges for multi-layer helical.
Further, blade is one-piece auger shape, makes the powder in described reaction chamber exchange the most up and down.
Further, being provided with drainage screen in reaction chamber, exhaust pipe connects with drainage screen upper cavity.
Further, exhaust pipe is provided with powder catcher.
Further, blade material is porous metals, porous ceramics or porous membrane.
Compared with prior art, the invention have the advantages that employing is carried out after being passed through reaction gas, and reaction inside the powder of stirring in time, circulation is carried out, and may be implemented in powder surface uniform coated, and navigability is good.Can effectively solve because of there is rigid contact and powder agglomeration in powder and can not be in the problem of its surface uniform coated, a large amount of micro-nano pore by being distributed on rotary fluid blade injects reacting gas and purge gas to whole powder inner homogeneous simultaneously, it is effectively shortened the response time, improves plated film efficiency.
Accompanying drawing explanation
Fig. 1 is the present invention structural representation at the apparatus for atomic layer deposition of powder surface uniform coated；
Fig. 2 is the schematic appearance that rotating porous enters source device；
The most each reference is: 1 motor, 2 magnetic fluid seal, 3 reaction chambers, 5 rotating porous enter source device, 6 powder filter nets, 7 powder catchers, 8 shutoff valves, 9 vacuometers, 10 vacuum pumps, 11ALD three-way solenoid valve, 12 the first reactant material source bottle, 13 the second reactant material sources, 14 pressure transducers, 15 mass flow controllers, 16 air inlet pipelines, 17 shutoff valves, 19 heaters.
Detailed description of the invention
Describing the present invention below in conjunction with the accompanying drawings, the description of this part is only exemplary and explanatory, should not have any restriction effect to protection scope of the present invention.
As illustrated in fig. 1 and 2, a kind of apparatus for atomic layer deposition at powder surface uniform coated, enters source device 5, reaction chamber 3, heater 19, air inlet pipeline 16 and exhaust pipe, wherein including motor 1, rotating porous:
Described rotating porous enters source device 5 and is made up of rotary shaft and blade, and rotary shaft is the hollow-core construction that two ends seal, and rotating shaft surface arranges substantial amounts of micro-nano pore, and these pores connect with the inner space of rotary shaft, and rotary shaft top connects described air inlet pipeline 16；Blade screw is fixing on the rotary shaft, inside is hollow, and connects with the inner space of rotary shaft, and blade surface is distributed substantial amounts of micro-nano pore, these pores connect with blade interior space and then connect with interior of rotating shaft space, finally connect with described air inlet pipeline 16.
Described rotating porous enters source device 5 and is erected at described reaction chamber 3 inside, and upper end is connected with described motor 1 by magnetic fluid seal 2, and described motor 1 drives described rotating porous to enter source device 5 to set speed rotation.
Described reaction chamber 3 is internal equipped with powder, and powder sample is wrapped in described rotating porous and enters the micro-nano pore on source device 5 external surface peripheral, especially parcel rotary shaft and blade；Described rotating porous enters source device 5 when rotated by even fluidizing for the powder in described reaction chamber 3.
Described air inlet pipeline 16 is entered in source device 5 rotary shaft and on blade micro-nano pore be uniformly injected into inside powder for entering to input in source device 5 hollow rotary shaft reacting gas and purge gas, reacting gas and purge gas to described rotating porous by described rotating porous；Utilize described rotating porous to enter source device 5 the source mouth quantity of entering of reacting gas and purge gas to be counted in terms of trillion from single increasing to, these enter source mouth by powder coated and along with blade 4 moves in a specific way, and it is identical with the statistical probability entered source mouth and contact to make again different powder particle while even fluidizing powder.
Air inlet pipeline 16 is provided with pressure transducer 14, mass flow controller 15 and shutoff valve 17.
Described reaction chamber 3 is bled by described exhaust pipe, for taking reacting gas, byproduct of reaction and the purge gas of excess away, it is possible to make described reaction chamber 3 inside reach target vacuum.
Described reaction chamber 3 is arranged around heater 19, for heating powder sample so that reacting gas occurs ald reaction at a temperature of setting, thus at powder surface filming.
Exhaust pipe configures shutoff valve 8, closes this valve and described reaction chamber 3 inside can be made to be in overvoltage condition, be of value to reacting gas and purge gas leaks into inside powder.
Described rotating porous enters connection more blades in the rotary shaft of source device 5, the parameter of blade is disposed to ensure that the statistical probability that the powder pore micro-nano with on blade of zones of different contacts is identical, so that powder fluidising evenly, and reacting gas and purge gas are uniformly injected into inside powder.Easy to understand, blade quantity and surface texture are optimized and revised, can further improve coating effects.
The most micro-nano rank of air inlet on blade, it is to avoid result in blockage in powder access aperture, the material of blade can be porous metals, porous ceramics or other porous membrane.
The rotary shaft outer wall that blade enters source device 5 around described rotating porous helically combines arrangement, and the advantage of this structure is that the powder allowing the powder bottom described reaction chamber 3 constantly be sent in top, i.e. reaction chamber exchanges the most up and down.
Blade quantity is multi-disc, all can independently change for every, i.e. micro-nano pore on blade can be replaced.
Higher than the position of the powder upper surface loaded in described reaction chamber 3, described powder filter net 6 is set, it is to avoid entrance exhaust pipe of kicking up during powder fluidising.
Powder catcher 7 is set between described exhaust pipe and described reaction chamber 3, it is to avoid powder is drawn into vacuum pump.
Compared with existing powder coatings technique for atomic layer deposition, apparatus of the present invention have done powder fluidising mode and enter the improvement of source mode, it is possible to obtain following beneficial effect:
Energy fluidizing powder of the present invention, blows powder without air blast in fluid mapper process, and the speed of rotary fluid can adjust according to the amount of the particle diameter of powder, powder.
When powder sample amount increases, the equal proportion increase diameter dimension of described reaction chamber, described rotating porous can be only needed to enter radius of turn and the quantity of described rotary fluid blade of source device, the present invention is made both to have may be used for the surface atom layer depositing homogeneous plated film of (such as 1-10g) powder on a small quantity it can also be used to the surface atom layer depositing homogeneous plated film of a large amount of (such as 100g-100kg) powder.
The present invention also powder filter net and powder catcher in described reaction chamber upper design, the probability making powder enter exhaust pipe drops to the least value, it is ensured that exhaust pipe safety and extend service life of vacuum pump.
The rotating porous of the present invention enters source device, even fluidizing powder and the injector serving as reacting gas and purge gas.Because rotating porous enter source device all the time rotate and and powder contact, so utilizing it to replace single reacting gas and purge gas air inlet in conventional atom layer deposition techniques, in conjunction with Rotating with Uniform fluidisation design, with the highest efficiency, reacting gas and purge gas will be transported to the inside of powder, improve ald in the film thickness monitoring ability of powder surface coating and plated film efficiency.Another aspect, is injected into the reacting gas within powder and purge gas is constantly brought to upper surface, can improve the efficiency of cleaning step.3rd aspect, when the described rotating porous of follow-up cleaning enters source device, it is placed in cleaning solution, rotated by driven by motor, simultaneously enter the interior of rotating shaft of source device to described Stirring and be passed through the gas of elevated pressures, because gas can only enter the micro-nano pore discharge on the device of source by rotating porous, Rapid Cleaning can be realized, improve described rotating porous and enter the service efficiency of source device, reduce use cost.4th aspect, it is multi-disc that rotating porous enters the blade on the device of source, and every separate and replaceable, can be individually replaced after a certain blade breaks down.
In use, powder being positioned over reaction chamber 3 internal, after closing reaction chamber 3 hatch door, execution is following operates:
A () opens heater 19 reacting by heating chamber 3；
B () starts motor 1, rotating porous enters source device 5 and starts rotary fluid sample；
C () starts vacuum pump 10, open the shutoff valve 8 on exhaust pipe, and the mass flow controller 15 on air inlet pipeline 16 controls purge gas entrance rotating porous and enters source device 5；
D () closes shutoff valve 8, ALD three-way solenoid valve 11 on the first reactant material source bottle 12 pipeline is opened, repeatedly the first reactant material source steam of interval pulse enters air inlet pipeline 16, i.e. reacting gas I, enter in source device 5 along with carrier gas enters rotating porous, reacting gas I enters the micro-nano pore on source device 5 by rotating porous and enters inside powder, saturated from absorption on powder surface；
E () opens shutoff valve 8, purge gas enters rotating porous and enters source device 5 and then inject inside powder, cleans and removes the reacting gas I of excess in powder inside and reaction chamber 3；
F () closes shutoff valve 8, ALD three-way solenoid valve 11 on the second reactant material source bottle 13 pipeline is opened, repeatedly interval pulse the second reactant material source steam enters air inlet pipeline 16, i.e. reacting gas II, enter in micropore agitator 5 along with carrier gas and then inject inside powder, reacting generation target substance with adsorbing before at the reacting gas I on powder surface；
G () opens shutoff valve 8, purge gas enters rotating porous and enters source device 5 and then inject inside powder, cleans reacting gas II and the byproduct of reaction removing excess in powder inside and reaction chamber 3；
H () repeats (d)-(g) step repeatedly, finally give the powder surface coating of target thickness；
Test example
Below with at SiO2The upper Al uniformly preparing one layer of 5nm thickness of powder (powder diameter is 10um)2O3As a example by thin film, the devices and methods therefor of invention described in practical illustration.
Before reaction starts, first by a certain amount of SiO2Powder puts into reaction chamber, and powder upper surface is less than powder filter net position, loads onto powder filter net, closes reaction chamber hatch door；Atomic layer deposition method prepares Al2O3Need two kinds of reaction mass trimethyl aluminiums (TMA) and the pure water (H used2O) it is attached separately in source bottle 12 and in source bottle 13.
A () opens heater 19, begin to warm up reaction chamber 3, and reaction chamber temperature is heated to 100-400 DEG C, preferably 200-300 DEG C；
B () starts motor 1, rotating porous enters source device 5 and starts rotary fluid SiO2Powder sample, described motor 1 is preferably rotating speed continuously adjustabe, and degree of regulation is up to 0.1 rev/min, and when opening motor first, speed should be slowly increased from minimum speed, and before ald reaction starts, regulation rotating speed is between 20～600 revs/min；
C () starts vacuum pump 10, open the shutoff valve 8 on exhaust pipe, and air inlet pipeline 16 starts into purgative gas, and preferably purge gas is N2Or Ar；
D () closes the shutoff valve 8 on exhaust pipe, regulate and control reaction chamber 3 vacuum through vacuometer 9；Opening the ALD valve 11 on TMA source bottle 12 pipeline, single opening time is 1s, opens altogether 10 times, every minor tick 5s, and TMA vapor source enters in source device 5 along with air inlet pipeline 16 enters rotating porous and then enters SiO2Inside powder, at SiO2One layer of TMA monolayer of powder surface adsorption, after the last pulse of TMA, the time that the shutoff valve 8 on exhaust pipe continues to close is no less than 100s；
E () opens the shutoff valve 8 on exhaust pipe, take the TMA molecule of excess in reaction chamber 3 away, and the time is no less than 30s；
F () closes the shutoff valve 8 on exhaust pipe, open H2ALD valve 11 on bottle 13 pipeline of O source, single opening time is 1s, opens altogether 10 times, every minor tick 5s, H2O vapor source enters in source device 5 along with air inlet pipeline 16 enters rotating porous and then enters SiO2Inside powder, adsorb at SiO in (d) step2The TMA molecule generation ald reaction on surface, generates target substance Al2O3, H2After the last pulse in O source, the time that the shutoff valve 8 on exhaust pipe is closed is no less than 100s；
G () opens the shutoff valve 8 on exhaust pipe, take the H of excess in reaction chamber 3 away2O molecule and byproduct of reaction CH4Molecule, the time is no less than 30s；
H () repeats (d)-(g) step 50 time, finally give and be uniformly plated in SiO25nm thickness A l on microsphere2O3Thin film.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (9)
1., at an Atomic layer deposition method for powder surface uniform coated, comprise the following steps:
, the powder of reacting by heating intracavity, simultaneously stirring and evacuation, send into purgative gas；
(2), stop evacuation and cut-off and be passed through purgative gas, inside powder, be passed through reaction gas, stirring reaction；
(3), stop being passed through reaction gas, open evacuation simultaneously, inside powder, be passed through purgative gas.
2. as claimed in claim 1 at the Atomic layer deposition method of powder surface uniform coated, it is characterised in that: circulation step is (2) with step (3).
3. as claimed in claim 2 at the Atomic layer deposition method of powder surface uniform coated, it is characterised in that: repeat step (2) time, be passed through another reaction gas.
4. the apparatus for atomic layer deposition at powder surface uniform coated, it is characterized in that: include that motor, rotating porous enter source device, reaction chamber, heater, air inlet pipeline and exhaust pipe, rotating porous enters source device for be made up of hollow axle and blade, hollow axle two ends are seal, sidewall is provided with pore, blade spiral is fixed on hollow axle, and blade is provided with the micropore connected with hollow axle；Rotating porous enters source device and is erected in reaction chamber, and upper end is connected with motor shaft, and air inlet pipeline connects with hollow axle, and exhaust pipe connects with reaction chamber；On heater coating reaction cavity outer wall.
5. as claimed in claim 4 at the apparatus for atomic layer deposition of powder surface uniform coated, it is characterised in that: blade is several, arranges for multi-layer helical.
6. as claimed in claim 4 at the apparatus for atomic layer deposition of powder surface uniform coated, it is characterised in that: blade is one-piece auger shape, makes the powder in described reaction chamber exchange the most up and down.
7. as claimed in claim 4 at the apparatus for atomic layer deposition of powder surface uniform coated, it is characterised in that: being provided with drainage screen in reaction chamber, exhaust pipe connects with drainage screen upper cavity.
8. at the apparatus for atomic layer deposition of powder surface uniform coated as described in claim 4 or 7, it is characterised in that: exhaust pipe is provided with powder catcher.
9. as claimed in claim 4 at the apparatus for atomic layer deposition of powder surface uniform coated, it is characterised in that: blade material is porous metals, porous ceramics or porous membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610530974.XA CN106011791A (en) | 2016-07-07 | 2016-07-07 | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610530974.XA CN106011791A (en) | 2016-07-07 | 2016-07-07 | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106011791A true CN106011791A (en) | 2016-10-12 |
Family
ID=57107797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610530974.XA Pending CN106011791A (en) | 2016-07-07 | 2016-07-07 | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106011791A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502873A (en) * | 2017-09-30 | 2017-12-22 | 华中科技大学无锡研究院 | A kind of powder coats apparatus for atomic layer deposition |
| WO2018223413A1 (en) * | 2017-06-07 | 2018-12-13 | 华中科技大学 | Continuous cladding apparatus and method for nano-particles based on spatial atomic layer deposition |
| CN109305814A (en) * | 2018-12-21 | 2019-02-05 | 广州天极电子科技有限公司 | A kind of preparation method of ceramic capacitor |
| CN109536926A (en) * | 2019-01-24 | 2019-03-29 | 嘉兴科民电子设备技术有限公司 | A method of fixture and production deposition film for atomic layer deposition |
| CN109865484A (en) * | 2019-04-01 | 2019-06-11 | 深圳市奥普斯等离子体科技有限公司 | A kind of particle and powder body material plasma surface processor |
| CN109930111A (en) * | 2019-04-16 | 2019-06-25 | 太原开元智能装备有限公司 | Continuous powder coatings device |
| CN110055513A (en) * | 2019-06-10 | 2019-07-26 | 南开大学 | A kind of powder atomic layer deposition apparatus and its deposition method and application |
| CN110382440A (en) * | 2016-11-07 | 2019-10-25 | 科罗拉多大学董事会 | The performance of improved technology grade ceramics |
| CN110546120A (en) * | 2017-04-20 | 2019-12-06 | 劳力士有限公司 | Manufacture of ceramic components |
| CN111218669A (en) * | 2020-01-10 | 2020-06-02 | 四川大学 | Rotary drum type reactor for pulse chemical vapor deposition coating and application thereof |
| CN112176319A (en) * | 2020-09-01 | 2021-01-05 | 江苏微导纳米科技股份有限公司 | Powder coating device and powder coating method |
| CN112442682A (en) * | 2020-11-23 | 2021-03-05 | 江汉大学 | Production device and method for continuous powder coating |
| CN112695295A (en) * | 2020-11-16 | 2021-04-23 | 鑫天虹(厦门)科技有限公司 | Powder atomic layer deposition device with special cover plate design |
| CN113046728A (en) * | 2021-03-12 | 2021-06-29 | 南开大学 | Atomic layer deposition device and atomic layer deposition method suitable for powder sample |
| CN114134483A (en) * | 2021-09-23 | 2022-03-04 | 厦门韫茂科技有限公司 | Atomic layer deposition method and device for coating powder material |
| CN115142042A (en) * | 2022-07-19 | 2022-10-04 | 江苏微导纳米科技股份有限公司 | Powder processing apparatus and powder processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103585781A (en) * | 2013-12-03 | 2014-02-19 | 姜向前 | Vertical continuous-cooling crystallization machine |
| CN104073430A (en) * | 2014-06-22 | 2014-10-01 | 浙江长城减速机有限公司 | Aeration mixing device of high-viscosity fermentation system |
| CN105369221A (en) * | 2015-12-17 | 2016-03-02 | 华中科技大学 | Device and method for depositing atomic layer wrapping nanometer particle |
| CN105648422A (en) * | 2016-01-14 | 2016-06-08 | 北京大学深圳研究生院 | Gaseous phase atomic layer deposition device for electrode powder material coating and application |
| CN205741206U (en) * | 2016-07-07 | 2016-11-30 | 王禄荣 | Apparatus for atomic layer deposition at powder surface uniform coated |
-
2016
- 2016-07-07 CN CN201610530974.XA patent/CN106011791A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103585781A (en) * | 2013-12-03 | 2014-02-19 | 姜向前 | Vertical continuous-cooling crystallization machine |
| CN104073430A (en) * | 2014-06-22 | 2014-10-01 | 浙江长城减速机有限公司 | Aeration mixing device of high-viscosity fermentation system |
| CN105369221A (en) * | 2015-12-17 | 2016-03-02 | 华中科技大学 | Device and method for depositing atomic layer wrapping nanometer particle |
| CN105648422A (en) * | 2016-01-14 | 2016-06-08 | 北京大学深圳研究生院 | Gaseous phase atomic layer deposition device for electrode powder material coating and application |
| CN205741206U (en) * | 2016-07-07 | 2016-11-30 | 王禄荣 | Apparatus for atomic layer deposition at powder surface uniform coated |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11613502B2 (en) | 2016-11-07 | 2023-03-28 | The Regents Of The University Of Colorado | Core-shell ceramic particle colloidal gel and solid oxide fuel cell electrolyte |
| CN110382440A (en) * | 2016-11-07 | 2019-10-25 | 科罗拉多大学董事会 | The performance of improved technology grade ceramics |
| US11919817B2 (en) | 2017-04-20 | 2024-03-05 | Rolex Sa | Manufacture of a ceramic component |
| US11905220B2 (en) | 2017-04-20 | 2024-02-20 | Rolex Sa | Manufacture of a ceramic component |
| CN110546120A (en) * | 2017-04-20 | 2019-12-06 | 劳力士有限公司 | Manufacture of ceramic components |
| WO2018223413A1 (en) * | 2017-06-07 | 2018-12-13 | 华中科技大学 | Continuous cladding apparatus and method for nano-particles based on spatial atomic layer deposition |
| CN107502873B (en) * | 2017-09-30 | 2019-02-15 | 华中科技大学无锡研究院 | A kind of powder cladding apparatus for atomic layer deposition |
| CN107502873A (en) * | 2017-09-30 | 2017-12-22 | 华中科技大学无锡研究院 | A kind of powder coats apparatus for atomic layer deposition |
| CN109305814A (en) * | 2018-12-21 | 2019-02-05 | 广州天极电子科技有限公司 | A kind of preparation method of ceramic capacitor |
| CN109536926A (en) * | 2019-01-24 | 2019-03-29 | 嘉兴科民电子设备技术有限公司 | A method of fixture and production deposition film for atomic layer deposition |
| CN109536926B (en) * | 2019-01-24 | 2021-04-13 | 嘉兴科民电子设备技术有限公司 | Clamp for atomic layer deposition and method for producing deposited film |
| CN109865484A (en) * | 2019-04-01 | 2019-06-11 | 深圳市奥普斯等离子体科技有限公司 | A kind of particle and powder body material plasma surface processor |
| CN109930111A (en) * | 2019-04-16 | 2019-06-25 | 太原开元智能装备有限公司 | Continuous powder coatings device |
| CN110055513B (en) * | 2019-06-10 | 2021-01-15 | 南开大学 | Powder atomic layer deposition equipment and deposition method and application thereof |
| CN110055513A (en) * | 2019-06-10 | 2019-07-26 | 南开大学 | A kind of powder atomic layer deposition apparatus and its deposition method and application |
| CN111218669B (en) * | 2020-01-10 | 2021-08-17 | 四川大学 | Rotary drum type reactor for pulse chemical vapor deposition coating and application thereof |
| CN111218669A (en) * | 2020-01-10 | 2020-06-02 | 四川大学 | Rotary drum type reactor for pulse chemical vapor deposition coating and application thereof |
| CN112176319A (en) * | 2020-09-01 | 2021-01-05 | 江苏微导纳米科技股份有限公司 | Powder coating device and powder coating method |
| CN112695295A (en) * | 2020-11-16 | 2021-04-23 | 鑫天虹(厦门)科技有限公司 | Powder atomic layer deposition device with special cover plate design |
| CN112442682A (en) * | 2020-11-23 | 2021-03-05 | 江汉大学 | Production device and method for continuous powder coating |
| CN113046728A (en) * | 2021-03-12 | 2021-06-29 | 南开大学 | Atomic layer deposition device and atomic layer deposition method suitable for powder sample |
| CN114134483A (en) * | 2021-09-23 | 2022-03-04 | 厦门韫茂科技有限公司 | Atomic layer deposition method and device for coating powder material |
| CN115142042A (en) * | 2022-07-19 | 2022-10-04 | 江苏微导纳米科技股份有限公司 | Powder processing apparatus and powder processing method |
| CN115142042B (en) * | 2022-07-19 | 2023-05-05 | 江苏微导纳米科技股份有限公司 | Powder treatment device and powder treatment method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106011791A (en) | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device | |
| CN205741206U (en) | Apparatus for atomic layer deposition at powder surface uniform coated | |
| CN104046958A (en) | Device and method for surface modification of micro-nano particles | |
| CN108715998B (en) | A kind of apparatus for atomic layer deposition for high-volume micro-nano granules package | |
| CN105648422A (en) | Gaseous phase atomic layer deposition device for electrode powder material coating and application | |
| CN1296146C (en) | Method and equipment for coating slurry layer on cellular carrier of ceramics | |
| RU2715711C2 (en) | Multifunctional coating application system and coating application unit for application of washcoat catalytic coating and/or solution onto substrate and methods of application | |
| CN106531661B (en) | Substrate-treating apparatus | |
| CN204058588U (en) | A kind of device for micro-nano granules finishing | |
| CN106086819A (en) | Powder coatings device and method | |
| US20190161859A1 (en) | Apparatus for making large-scale atomic layer deposition on powdered materials with plowing action | |
| CN113897593A (en) | Solid precursor source storage sublimator | |
| CN209005699U (en) | A kind of methanol decomposition reactor | |
| CN205907357U (en) | Powder coating film device | |
| CN213835530U (en) | Solid-state source bottle | |
| CN111218669B (en) | Rotary drum type reactor for pulse chemical vapor deposition coating and application thereof | |
| CN113564565B (en) | Powder coating device and method | |
| CN210736777U (en) | Hanging cabin type biomass dry fermentation gas production device | |
| CN107906847A (en) | A kind of multifunctional composite vibrates boiling drier | |
| CN113457608A (en) | Production and processing equipment and process of polyurethane waterproof coating | |
| CN209204973U (en) | Coating organic waste gas treatment device | |
| CN218146936U (en) | Drum-type atomic layer deposition equipment | |
| CN209177319U (en) | A kind of water-reducing agent temporary storage tank | |
| CN208925222U (en) | A kind of apparatus for preparing animal feeding-stuffs | |
| CN208422219U (en) | A kind of two dimensional fluidized bed experimental provision |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161012 |
|
| RJ01 | Rejection of invention patent application after publication |