CN106011759B - A kind of high c-axis orientation AlN films and the preparation method and application thereof - Google Patents
A kind of high c-axis orientation AlN films and the preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a kind of high c-axis orientation AlN films and the preparation method and application thereof.The preparation method of the high c-axis orientation AlN films includes the following steps：Graphene is spun on to the substrate that graphene covering is obtained on substrate；Using reactive sputtering, deposited to obtain the AlN films on the substrate of graphene covering；The working gas of the reactive sputtering is the mixed gas of nitrogen and argon gas；The target of the reactive sputtering is aluminium target.The method of the present invention makees the problem of buffer layer effectively alleviates the lattice mismatch and coefficient of thermal expansion mismatch between substrate layer and AlN layers using graphene so that the stress in AlN films prepared by the present invention is relatively low.The AlN piezoelectric membranes of preferred orientation of the present invention can be used for preparing the SAW device of high frequency, high-power, high electromechanical coupling factor, and product reliability is strong, high yield rate and at low cost.Preparation method of the present invention is easy to operate, of low cost, easy to implement, is conducive to large-scale promotion application.
Description
Technical field
The present invention relates to a kind of high c-axis orientation AlN films and the preparation method and application thereof, belong to information electronic materials technology
Field.
Background technology
AlN is a kind of widely used III-V race's composite semiconductor material with close-packed hexagonal wurtzite structure,
With excellent physical and chemical performance, if direct band gap is big, high-melting-point, high heat conductance, high-k, high temperature are steady
Qualitative, the high velocity of sound etc..In field of information communication, surface acoustic wave (SAW) utensil has small, light weight, signal processing energy
The features such as power is excellent, stability is good is widely used in mobile communication, television broadcasting and various military communications.With 4G nets
The frequency of use of the appearance and development of network and the higher communication network of frequency, SAW device is continuously improved, and AlN films
With highest acoustic surface wave speed in all inorganic non-piezoelectric materials, therefore it can become and effectively improve in SAW device
The piezoelectric material of frequency of heart.And compared with general AlN films, highly oriented AlN films have many excellent performances, for example,
The AlN being orientated along c-axis has extraordinary piezoelectricity and surface acoustic wave high-speed transfer, therefore preparing c-axis orientation AlN films will
It can very big promotion SAW device phase velocity and electromechanical coupling factor.Currently, AlN films are generally grown in foreign substrate.By
In AlN, there are larger lattice mismatches and thermal expansion mismatch degree with substrate, cause AlN film crystals of poor quality, exist higher
Dislocation density and larger stress, seriously affected the performance of SAW device.So according to problem above, high c is grown
The AlN films of axis orientation, low-dislocation-density and low stress are the premises for preparing SAW device.
Invention content
The object of the present invention is to provide a kind of high c-axis orientation AlN films and the preparation method and application thereof, the present invention utilize at
This cheap graphene is directly deposited on the substrate for cover graphene as buffer layer using direct current reaction magnetron sputtering
It is easy to operate to AlN films；The c-axis that preparation method of the present invention not only increases AlN films is orientated, and reduces AlN films
Dislocation density and stress.AlN films of the present invention can make electromechanical conversion efficiency in the piezoelectric membrane as SAW device
Increase, insertion loss reduces, therefore is suitble to prepare high frequency, high-power, high machine coefficient of coup SAW device.
The preparation method of high c-axis orientation AlN films provided by the invention, includes the following steps：Graphene is spun on lining
The substrate of graphene covering is obtained on bottom；Using reactive sputtering, deposited to obtain institute on the substrate of graphene covering
State AlN films；
The working gas of the reactive sputtering is the mixed gas of nitrogen and argon gas；
The target of the reactive sputtering is aluminium target.
In above-mentioned preparation method, the substrate can be sapphire, silicon carbide or silicon chip；
To on the substrate before graphene described in spin coating, the method further includes following steps：With acetone, ethyl alcohol and/
Or deionized water cleans the substrate, and ultrasonic cleaning can be used, then dried up with nitrogen.
In above-mentioned preparation method, the graphene is spun on the substrate using following steps：Graphene is received
Rice piece, which is scattered in N,N-dimethylformamide or N-Methyl pyrrolidone, obtains the dispersion liquid of graphene；By the dispersant liquid drop
On the substrate for being positioned over equal glue machine, make the equal glue machine rotation, drying.
The concentration of the dispersion liquid can be 0.05~1mg/mL, concretely 0.1mg/mL；
It controls the equal glue machine and 5~10s is rotated with the rotating speed of 1000~3000r/min, graphene uniform is made to be distributed in institute
State on substrate, be rapidly moved to the substrate on 100~180 DEG C of warm table later, dry it is for use after 5~10min, specifically can be with
The rotating speed of 2000r/min rotates 8s, is rapidly moved to substrate on 150 DEG C of warm table later, dries 10min.
In above-mentioned preparation method, the reactive sputtering is 10 in vacuum degree-6~10-4It is carried out under conditions of Pa, it is described true
Reciprocal of duty cycle concretely 5 × 10-5Pa；
In the working gas, the volume ratio of the nitrogen and the argon gas can be 0.5~1:1, concretely 1:1；
The purity of the argon gas is 99.999%, and the purity of the nitrogen is 99.999%.
The mode that is passed through of the working gas is first to be passed through the argon gas to be passed through the nitrogen again；
The flow for controlling the working gas can be 6mL/min~60mL/min, concretely 36mL/min.
In above-mentioned preparation method, the reactive sputtering can be direct current reaction magnetron sputtering, the magnetic control of the reactive sputtering
Sputtering source is flat target controlled sputtering source；
The power of the reactive sputtering can be 100W~200W, concretely 200W；
The temperature of the reactive sputtering can be 500 DEG C~600 DEG C, concretely 500 DEG C；
The time of the reactive sputtering can be 20min~60min, concretely 40min；
The distance between the target and the substrate of graphene covering can be 6cm~8cm, concretely 6cm；
The pressure of the working gas can be 0.2Pa~0.8Pa, concretely 0.4Pa.
It is the chip bench that the substrate for covering the graphene is placed in magnetron sputtering coater when carrying out the reactive sputtering
On；Further include following steps after the completion of the reactive sputtering：Wait for that chip bench temperature is less than 100 DEG C, to the magnetron sputtering plating
It is atmospheric pressure that high pure nitrogen to vacuum indoor pressure is filled in the vacuum chamber of machine, takes out the AlN films.
It is piezoelectric membrane the present invention also provides the AlN films prepared by the above method, thickness is 600~
800nm；There is the AlN films high (002) crystal face (i.e. c-axis) to be orientated.
AlN films provided by the invention can be used for preparing the surface acoustic wave device of high frequency, high-power, high electromechanical coupling factor
Part.
Through the invention it can be found that using graphene as buffer growth AlN films, the c of AlN films is not only increased
Axis is orientated, and reduces the dislocation density and stress of AlN films.
Compared with prior art, the invention has the advantages that：
The present invention successfully prepares AlN films, prepared AlN films tool on substrate using graphene as buffer layer
There are c-axis orientation, low dislocation density and the low residual stress of height.The AlN films that the present invention is prepared, scan it
(002) rocking curve halfwidth in face can be less than 0.90 °, and (102) face rocking curve halfwidth can be less than 1.3 °, have low spiral shell
Type and edge dislocation density, AlN crystal quality are significantly improved.The method of the present invention is made buffer layer using graphene and is effectively delayed
The problem of having solved the lattice mismatch and coefficient of thermal expansion mismatch between substrate layer and AlN layers so that AlN films prepared by the present invention
In stress it is relatively low.The AlN piezoelectric membranes of preferred orientation of the present invention can be used for preparing high frequency, high-power, high electromechanical coupling
Several SAW devices, product reliability is strong, high yield rate and at low cost.Preparation method of the present invention is easy to operate, of low cost, easily
In implementation, be conducive to large-scale promotion application.
Description of the drawings
Fig. 1 is the structural schematic diagram of AlN films prepared by the present invention.
Fig. 2 is the SEM photograph by graphene nanometer sheet spin coating on substrate in the embodiment of the present invention 1
Fig. 3 is the AFM figures of AlN films prepared by the embodiment of the present invention 1.
Fig. 4 is the XRD diagram of AlN films prepared by the embodiment of the present invention 1, the 2 θ-ω figures that wherein Fig. 4 (a) is AlN, Fig. 4
(b) it is the rocking curve figure of AlN (002) crystal face, Fig. 4 (c) is the rocking curve figure of AlN (102) crystal face.
Fig. 5 is the TEM figures of AlN films prepared by the embodiment of the present invention 1, wherein illustration is the selection diffraction pattern of AlN.
Fig. 6 is the Raman figures of AlN films prepared by the embodiment of the present invention 1.
Fig. 7 is the XRD diagram of AlN films prepared by the embodiment of the present invention 2, the 2 θ-ω figures that wherein Fig. 7 (a) is AlN, Fig. 7
(b) it is the rocking curve figure of AlN (002) crystal face, Fig. 7 (c) is the rocking curve figure of AlN (102) crystal face.
Fig. 8 is the AFM figures of AlN films prepared by the embodiment of the present invention 2.
Fig. 9 is the Raman figures of AlN films prepared by the embodiment of the present invention 2.
Specific implementation mode
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
The preparation and its performance test of embodiment 1, AlN films
(1) c surface sapphire substrates are respectively cleaned by ultrasonic 5min with acetone, alcohol and deionized water successively, then are blown with nitrogen
It is dry, the substrate after having cleaned is placed on equal Jiao Tai.
(2) compound concentration (is received for the dispersion liquid of 0.10mg/mL graphenes and N-Methyl pyrrolidone using graphene
Rice piece, is formed by being less than 50 atomic layer graphene nanometer sheets, and lateral dimension is 2~10 μm), by graphene and N- methyl pyrroles
The dispersion liquid of pyrrolidone drips on substrate dropwise, starts equal glue machine, so that it is rotated 8s with the rotating speed of 2000r/min, makes graphene
It is uniformly distributed on substrate, is rapidly moved to substrate on 150 DEG C of warm table later, it is for use after drying 10min.
In the step, graphene is spun on the SEM photograph on substrate as shown in Fig. 2, it can be seen from this figure that on substrate
It is dispersed with one layer of very thin graphene film.
(3) substrate in step (2) is fixed on iron wire on the chip bench of magnetron sputtering, substrate is together with chip bench
It is packed into vacuum chamber.For substrate apart from target 60mm, target is the Al targets (a diameter of 75mm, purity 99.999%) of high-purity.It opens
Dynamic mechanical pump and molecular pump are evacuated to 5 × 10-5Pa, working gas is high-purity argon gas (purity 99.999%) when sputtering AlN
With nitrogen (purity 99.999%) mixed gas, wherein argon flow amount is 18mL/min, nitrogen flow 18mL/min.Work
Air pressure is 0.4Pa, and radio-frequency power 200W, reaction temperature is 500 DEG C, and the rotational velocity of chip bench is 5r/min, sputtering time
For 40min.Before starting formal sputtering, target is blocked with baffle.Al target 5min are bombarded with 250W incident powers, remove target table
Face impurity and oxide layer.It is passed through high pure nitrogen, pre-sputtering 5min or so again, after power supply registration stabilization, opens target baffle, starts
Film is grown.After the completion of reactive sputtering, stop heating chip bench, when temperature is less than 100 DEG C, to magnetron sputtering coater
It is atmospheric pressure that air to vacuum indoor pressure is filled in vacuum chamber, begins to speak to take out prepared AlN films, average thickness is prepared
Degree is the AlN films of 800nm, and structural schematic diagram is as shown in Figure 1.
The AFM of AlN films manufactured in the present embodiment schemes as shown in figure 3, it can be seen from this figure that AlN film dense non-porous,
Grain size is more uniform, and crystal grain arrangement is close；The r.m.s. roughness RMS=2.12nm of AlN film surfaces, fullys meet
Make the requirement of SAW device.
The XRD spectrum of AlN films manufactured in the present embodiment is as shown in figure 4, it can be seen that in addition to substrate from Fig. 4 (a)
Outside diffraction maximum, only there is diffraction maximum in 36.02 ° and 76.38 °, shows in utilization graphene buffer layers in substrate growth AlN films
It is orientated with very high c-axis；Its (002) and (102) rocking curve halfwidth are respectively it can be seen from Fig. 4 (b) and Fig. 4 (c)
0.78 ° and 1.16 °, shows that the AlN film crystals quality grown is high, there is lower spiral shell type and edge dislocation density.
The TEM figures of AlN films manufactured in the present embodiment are as shown in Figure 5, wherein interior illustration is the selection diffraction spot of AlN
Figure.It can be seen from this figure that AlN film film thickness average out to 600nm, AlN film dense non-porous hole, and by the parallel column of height
Crystalline substance composition；Diffraction pattern is made of clear sharp keen diffraction spot, these diffraction patterns correspond to wurtzite structure, show that film is
Mono-crystalline structures, and be free of any other impurity phase.
The Raman of AlN films manufactured in the present embodiment schemes as shown in fig. 6, the Raman peaks that asterisk (*) marks in figure are AlN
The Raman peaks of film, wherein wave number is in 655cm-1The corresponding Raman peaks in left and right are the E of AlN films2(high) mould and wave number exist
886cm-1Corresponding Raman peaks are the A of AlN films when left and right1(LO) mould.With the E of body AlN2(high)(657.4cm-1) compare,
The E of AlN films prepared by this implementation2(high) wave number is 657.5cm-1, do not deviate significantly, show manufactured in the present embodiment
AlN stress in thin films is smaller.
Make the AlN films that buffer layer is grown on substrate using graphene it can be seen from above-mentioned test result, there is height
The advantages that degree c-axis is orientated, and crystal quality is high, and dislocation density is small, and stress is small, smooth surface, is fully achieved wanting for sound surface device
It asks, has a good application prospect.
The preparation and its performance test of embodiment 2, AlN films
(1) c surface sapphire substrates are respectively cleaned by ultrasonic 5min with acetone, alcohol and deionized water successively, then are blown with nitrogen
It is dry, the substrate after having cleaned is placed on equal Jiao Tai.
(2) compound concentration is that 0.10mg/mL graphenes adjoin the dispersion liquid of pyrrolidone with N- methyl and (received using graphene
Rice piece, is formed by being less than 50 atomic layer graphene nanometer sheets, and lateral dimension is 2~10 μm), by graphene and N- methyl pyrroles
The dispersion liquid of pyrrolidone drips on substrate dropwise, starts equal glue machine, so that it is rotated 8s with the rotating speed of 2000r/min, makes graphene
It is uniformly distributed on substrate, is rapidly moved to substrate on 150 DEG C of warm table later, it is for use after drying 10min.
(3) substrate in step (2) is fixed on iron wire on the chip bench of magnetron sputtering, substrate is together with chip bench
It is packed into vacuum chamber.For substrate apart from target 60mm, target is the Al targets (a diameter of 75mm, purity 99.999%) of high-purity.It opens
Dynamic mechanical pump and molecular pump are evacuated to 5 × 10-5Pa, working gas is that (purity is high-purity argon gas when sputtering aluminium nitride
99.999%) with nitrogen (purity 99.999%) mixed gas.Wherein argon flow amount is 18mL/min, and nitrogen flow is
18mL/min.Operating air pressure is 0.4Pa, and radio-frequency power 200W, reaction temperature is 500 DEG C, and the rotational velocity of chip bench is 5
Turn/min, sputtering time 40min.Before starting formal sputtering, target is blocked with baffle.Al targets are bombarded with 250W incident powers
5min removes target material surface impurity and oxide layer.It is passed through high pure nitrogen, pre-sputtering 5min or so again, after power supply registration stabilization,
Target baffle is opened, film growth is started.After the completion of reactive sputtering, stop heating chip bench, when temperature is less than 100 DEG C, to
It is atmospheric pressure that air to vacuum indoor pressure is filled in the vacuum chamber of magnetron sputtering coater, and beginning to speak, it is thin to take out prepared AlN
Film prepares the AlN films that average thickness is 600nm.
The XRD spectrum of AlN films manufactured in the present embodiment is as shown in fig. 7, it can be seen that in addition to substrate from Fig. 7 (a)
Outside diffraction maximum, only there is diffraction maximum in 36.04 ° and 76.40 °, shows that there is AlN films very high c-axis to be orientated；By Fig. 7 (b) and
It is respectively 0.83 ° and 1.26 ° that Fig. 7 (c), which can be seen that its (002) and (102) rocking curve halfwidth, shows the AlN grown
Film crystal quality is high, has lower spiral shell type and edge dislocation density.
The AFM of AlN films manufactured in the present embodiment schemes as shown in figure 8, it can be seen from this figure that AlN film surfaces are smooth
It is smooth, film dense non-porous；The r.m.s. roughness RMS=6.94nm of film surface, fullys meet making SAW device
Requirement.
The Raman of AlN films manufactured in the present embodiment schemes as shown in figure 9, the Raman peaks that asterisk (*) marks in figure are AlN
The Raman peaks of film.Wherein wave number is in 655cm-1The corresponding Raman peaks in left and right are the E of AlN films2(high) mould and wave number are
886cm-1Corresponding Raman peaks are the A of AlN films when left and right1(LO) mould.With the E of body AlN2(high)(657.4cm-1) compare,
The E of AlN films manufactured in the present embodiment2(high) wave number is 657.7cm-1, do not deviate significantly, show prepared by the present embodiment
AlN stress in thin films it is smaller.
Make the AlN films that buffer layer is grown on substrate using graphene it can be seen from above-mentioned test result, there is height
The advantages that degree c-axis is orientated, and crystal quality is high, and dislocation density is small, and stress is small, smooth surface, is fully achieved wanting for sound surface device
It asks, has a good application prospect.
Claims (3)
1. a kind of preparation method of high c-axis orientation AlN films, includes the following steps：Graphene is spun on substrate and obtains stone
The substrate of black alkene covering；Using reactive sputtering, deposited to obtain the AlN films on the substrate of graphene covering；
The working gas of the reactive sputtering is the mixed gas of nitrogen and argon gas；
The target of the reactive sputtering is aluminium target；
The reactive sputtering is 10 in vacuum degree-6~10-4 It is carried out under conditions of Pa；
In the working gas, the volume ratio of the nitrogen and the argon gas is 0.5 ~ 1:1；
The flow for controlling the working gas is the mL/min of 6 mL/min ~ 60；
The reactive sputtering is direct current reaction magnetron sputtering, and the controlled sputtering source of the reactive sputtering is plane target magnetic control sputtering
Source；
The power of the reactive sputtering is the W of 100 W ~ 200；
The temperature of the reactive sputtering is 500 °C ~ 600 °C；
The time of the reactive sputtering is the min of 20 min ~ 60；
The distance between the target and the substrate of graphene covering are the cm of 6 cm ~ 8；
The pressure of the working gas is the Pa of 0.2 Pa ~ 0.8；
The substrate is sapphire, silicon carbide or silicon chip；
To on the substrate before graphene described in spin coating, the method further includes following steps：With acetone, ethyl alcohol and/or go
Ionized water cleans the substrate；
The graphene is spun on the substrate using following steps：Graphene nanometer sheet is scattered in N, N- dimethyl methyls
The dispersion liquid of graphene is obtained in amide or N-Methyl pyrrolidone；By the dispersant liquid drop in the lining for being positioned over equal glue machine
On bottom, make the equal glue machine rotation, drying.
2. AlN films prepared by claim 1 the method；
The thickness of the AlN films is 600 ~ 800 nm.
3. application of the AlN films in preparing SAW device described in claim 2.
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| CN107381558B (en) * | 2017-08-20 | 2019-06-25 | 江苏百年门地家居科技有限公司 | A kind of preparation method and high-electroconductivity graphene film of high-electroconductivity graphene film |
| CN108613754B (en) * | 2018-04-23 | 2019-11-05 | 电子科技大学 | It is a kind of using c-axis orientation AlN film as the temp measuring method of sensor |
| JP7283273B2 (en) * | 2019-07-01 | 2023-05-30 | 株式会社レゾナック | MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/PLAYBACK APPARATUS |
| CN112760604B (en) * | 2019-11-01 | 2022-12-02 | 有研工程技术研究院有限公司 | Method for depositing high C-axis oriented aluminum nitride film on diamond substrate |
| CN110993752A (en) * | 2019-12-31 | 2020-04-10 | 湘能华磊光电股份有限公司 | LED epitaxial growth method taking graphene as buffer layer |
| CN114395751B (en) * | 2021-12-15 | 2023-12-29 | 有研工程技术研究院有限公司 | Preparation method of low-stress aluminum nitride film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769081A (en) * | 2011-05-03 | 2012-11-07 | 山东华光光电子有限公司 | Structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and preparation method of structure |
| CN103794469A (en) * | 2012-10-30 | 2014-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of gallium nitride film layer and substrate |
| CN103873010A (en) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104947071A (en) * | 2015-05-14 | 2015-09-30 | 天津理工大学 | Hierarchical GaN nano-array on graphene substrate as well as preparation method and application thereof |
-
2015
- 2015-11-18 CN CN201510801540.4A patent/CN106011759B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769081A (en) * | 2011-05-03 | 2012-11-07 | 山东华光光电子有限公司 | Structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and preparation method of structure |
| CN103794469A (en) * | 2012-10-30 | 2014-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of gallium nitride film layer and substrate |
| CN103873010A (en) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104947071A (en) * | 2015-05-14 | 2015-09-30 | 天津理工大学 | Hierarchical GaN nano-array on graphene substrate as well as preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 反应磁控溅射制备c轴择优取向氮化铝薄膜的研究进展;周剑 等;《真空》;20111130;第48卷(第6期);全文 * |
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