CN105990398B - Organic light emitting diode display and its manufacturing method - Google Patents
Organic light emitting diode display and its manufacturing method Download PDFInfo
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- CN105990398B CN105990398B CN201510083815.5A CN201510083815A CN105990398B CN 105990398 B CN105990398 B CN 105990398B CN 201510083815 A CN201510083815 A CN 201510083815A CN 105990398 B CN105990398 B CN 105990398B
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Abstract
The present invention discloses a kind of organic light emitting diode display and its manufacturing method, organic light emitting diode display includes: substrate, polysilicon layer, gate insulating layer, the first metal layer, the first semiconductor layer, second metal layer, the second semiconductor layer, organic planarization layer, wherein, the second metal layer of part is by with polysilicon layer connecting positioned at first area and through the first electrical connection hole of the second semiconductor layer and the first semiconductor layer and introducing initialization voltage Vint.Compared to the prior art, the present invention can overcome the problems, such as that there are mutual interference effects due to carrying out bracing wire using anode material for initial voltage Vint cabling in the prior art, and can increase opening area.
Description
Technical field
The present invention relates to a kind of display and its manufacturing methods, more particularly to a kind of Organic Light Emitting Diode (Organic
Light-Emitting Diode, OLED) display and its manufacturing method.
Background technique
OLED, i.e. Organic Light Emitting Diode, OLED have self luminous characteristic, the very thin coating of organic material of use and
Glass substrate, when an electric current passes through it, organic material will shine, and the visible angle of OLED display is big, and can show
It writes and saves electric energy, therefore OLED display but has many liquid crystal displays (Liquid Crystal Display, LCD) no
Analogous advantage.The panel (panel) of existing OLED display need to design circuit compensation driving thin film transistor
The threshold voltage of (Thin Film Transistor, TFT), picture is bright caused by avoiding OLED image quality from drifting about because of threshold voltage
Degree is uneven, but because of the demand of number of pixels expressed by the high per inch of oled panel (Pixel Per Inch, PPI), therefore is having
In the elemental area of limit, while meeting the needs of circuit trace and OLED light-emitting area, faces and need to stand for existing OLED design
The problem solved.
In existing OLED pixel circuit, for example apply low temperature polycrystalline silicon (LTPS, Low Temperature Poly-
Silicon top light emitting (Top Emission) OLED), since initial voltage (Vint) cabling is drawn using anode material
Line, face to face when Lingao PPI demand, Vint cabling can with the anode below former OLED material in limited pixel space mutual shadow
Position and size are rung, OLED luminous area effect is limited to Vint cabling to its luminous service life, and the two is mutually led
It makes, influence each other.
Vint voltage carries out bracing wire using anode material, and elemental area reduces when for the requirement of high PPI or OLED is sent out
Smooth surface increase in demand, as shown in Figure 1, the distance between Vint cabling 1 (anode material) and anode 2 (anode material) can further,
But because of each band different potentials therefore certain distance need to be kept again, often sacrifices OLED aperture opening ratio, influence brightness and reduces the OLED longevity
Life.
Summary of the invention
The purpose of the present invention is to provide a kind of organic light emitting diode display and its manufacturing methods, existing for solving
Initial voltage Vint cabling carries out bracing wire using anode material in technology and there are mutual interference effects, sacrifices OLED opening
Rate, the problems such as influencing brightness and reduce the OLED service life.
The present invention provides a kind of organic light emitting diode display, the polycrystalline including a substrate, in the substrate
Silicon layer and a gate insulating layer, the first metal layer on the gate insulating layer and one first insulating layer, be set to it is described
A second metal layer and a second insulating layer on first insulating layer, the organic planarization layer in the second insulating layer,
Wherein, the second metal layer of part passes through through the first electrical connection hole of the second insulating layer and first insulating layer
It is connect with the polysilicon layer.
A kind of organic light emitting diode display of the present invention further improvement lies in that, the organic light-emitting diode display
Device a further include: anode layer and a pixel defining layer in the organic planarization layer, the pixel defining layer, which has, to be exposed
The opening of the anode layer, the anode layer are electrically connected hole by the third through the organic planarization layer and are located at the secondth area
Polysilicon layer described in domain, the first electrical connection Kong Eryu being connected with third electrical connection hole is connect；And it is located at described
The opening of pixel defining layer is interior and is covered in the pixel electrode of the anode layer.
A kind of organic light emitting diode display of the present invention further improvement lies in that, the organic light-emitting diode display
Device a further include: anode layer and a pixel defining layer in the organic planarization layer, the pixel defining layer, which has, to be exposed
The opening of the anode layer, the anode layer by the third through the organic planarization layer are electrically connected hole and through described the
Two insulating layers and first insulating layer are simultaneously electrically connected polysilicon described in the first electrical connection Kong Eryu that hole is connected with the third
Layer connection；And in the opening of the pixel defining layer and it is covered in the pixel electrode of the anode layer.
A kind of organic light emitting diode display of the present invention further improvement lies in that: first insulating layer is SiNx
Layer, the second insulating layer are SiNx layer.
Organic light emitting diode display provided by the invention carries out initialization voltage Vint drawing using second metal layer
Line it is possible to prevente effectively from influencing each other with anode layer, and can increase opening area, improve brightness and service life.
The present invention separately provides a kind of manufacturing method of organic light emitting diode display, comprising: a substrate is provided, described
A polysilicon layer and a gate insulating layer are formed in substrate；A first metal layer and one first are formed on the gate insulating layer
Insulating layer；A second metal layer and a second insulating layer are formed on the first insulating layer；Production is through second insulation
The second metal layer in the first electrical connection hole of layer and first insulating layer, part passes through the first electrical connection hole and institute
State polysilicon layer connection；And an organic planarization layer is formed on the second insulating layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that, the organic light emission
The manufacturing method of diode display further include: production runs through the third electrical connection hole of the organic planarization layer and described organic
On flatness layer formed be electrically connected with the third hole be connected an anode layer, the anode layer by the third electrical connection hole with
And polysilicon layer described in the first electrical connection Kong Eryu being connected with third electrical connection hole is connect；In the organic planarization layer and
A pixel defining layer is formed on the anode layer, the pixel defining layer, which corresponds to the anode layer and formed, exposes the anode layer
Opening；And the pixel electrode for being covered in the anode layer is formed in the opening.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that, run through institute in production
The first electrical connection hole of second insulating layer and first insulating layer is stated, the second metal layer of part passes through first electricity
In the step of connecting hole is connect with the polysilicon layer, comprising: production runs through the second insulating layer and first insulating layer
The first electrical connection hole: define the graphical photoresist to form the first electrical connection hole on the second insulating layer, it is fixed
First electrical connection hole of justice is located at the top of the polysilicon layer；Using the figure photoresist as the second insulation described in mask etching
To form the first electrical connection hole, institute is run through in first electrical connection hole for layer, first insulating layer and the gate insulating layer
It states second insulating layer, first insulating layer and the gate insulating layer and manifests the corresponding polysilicon layer；Production
Second through the second insulating layer is electrically connected hole: is defined on the second insulating layer to form the second electrical connection hole
Graphical photoresist, the second electrical connection hole of definition is located at the top of the second metal layer；It is with the figure photoresist
For mask etching second insulating layer to form the second electrical connection hole, the second electrical connection hole is through the second insulating layer and appears
The second metal layer of part out；And in the bottom in first electrical connection hole and peripheral wall, second electrical connection hole
Third metal layer is formed on bottom and peripheral wall and the second insulating layer, so that the partial second metal layer passes through institute
Third metal layer is stated to connect with the polysilicon layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that, run through institute in production
It states the third electrical connection hole of organic planarization layer and is formed in the organic planarization layer and be electrically connected hole is connected one with the third
In the step of anode layer, comprising: define the graphical photoetching to form third electrical connection hole in the organic planarization layer
Glue；Third electrical connection hole, the third electrical connection are formed as organic planarization layer described in mask etching using the figure photoresist
Hole is through the organic planarization layer and manifests the third metal layer；And bottom and peripheral wall in third electrical connection hole
With the 4th metal layer of formation in the organic planarization layer, wherein be formed by the 4th metal layer in the organic planarization layer
As anode layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that: first insulation
Layer is SiNx layer, and the second insulating layer is SiNx layer.
The manufacturing method of organic light emitting diode display provided by the invention carries out initialization electricity using second metal layer
Vint bracing wire is pressed, it is possible to prevente effectively from influencing each other with anode layer, and opening area can be increased, improves brightness and service life.
The present invention provides a kind of organic light emitting diode display again, including a substrate, more than one in the substrate
Crystal silicon layer and a gate insulating layer, the first metal layer on the gate insulating layer and one first insulating layer are set to institute
State the second metal layer and a second insulating layer, the organic planarization in the second insulating layer on the first insulating layer
Layer, wherein the second metal layer of part passes through through the second electrical connection hole of first insulating layer and the polysilicon
Layer connection.
A kind of organic light emitting diode display of the present invention further improvement lies in that, the organic light-emitting diode display
Device a further include: anode layer and a pixel defining layer in the organic planarization layer, the pixel defining layer, which has, to be exposed
The opening of the anode layer, the anode layer pass through the first electrical connection through the second insulating layer and first insulating layer
Hole is connected with polysilicon layer described in the third electrical connection Kong Eryu through the organic planarization layer；And it is located at the pixel definition
The opening of layer is interior and is covered in the pixel electrode of the anode layer.
A kind of organic light emitting diode display of the present invention further improvement lies in that: first insulating layer is SiNx
Layer, the second insulating layer are SiNx layer.
Organic light emitting diode display provided by the invention carries out initialization voltage Vint drawing using second metal layer
Line it is possible to prevente effectively from influencing each other with anode layer, and can increase opening area, improve brightness and service life.
The present invention provides a kind of manufacturing method of organic light emitting diode display again, comprising: a substrate is provided, described
A polysilicon layer and a gate insulating layer are formed in substrate；A first metal layer and one first are formed on the gate insulating layer
Insulating layer；Production is electrically connected hole through the second of first insulating layer and forms one second metal on the first insulating layer
Layer, wherein the second metal layer of part is connect by second electrical connection hole with the polysilicon layer；Described first
Second insulating layer is formed in insulating layer and the second metal layer；And an organic planarization is formed on the second insulating layer
Layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that, further includes: production
The first electrical connection hole and formation 1 the on the second insulating layer through the second insulating layer and first insulating layer
Three metal layers, the third metal layer are connected to the polysilicon layer by first electrical connection hole；Production has through described
The third of machine flatness layer, which is electrically connected hole and is formed in the organic planarization layer, is electrically connected the connected anode in hole with the third
Layer, the third electrical connection hole are electrically connected hole with described first and are connected, and the anode layer is electrically connected hole and institute by the third
State the connection of polysilicon layer described in the first electrical connection Kong Eryu；It is fixed that a pixel is formed in the organic planarization layer and the anode layer
Adopted layer, the pixel defining layer correspond to the anode layer and form the opening for exposing the anode layer；And shape in the opening
At the pixel electrode for being covered in the anode layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that, production is through described
Second electrical connection hole of the first insulating layer simultaneously forms a second metal layer on the first insulating layer, comprising: described first
The graphical photoresist to form the second electrical connection hole is defined on insulating layer, the second electrical connection hole of definition is located at described more
The top of crystal silicon layer；It is the first insulating layer described in mask etching and the gate insulating layer to form using the figure photoresist
Two electrical connection holes, the second electrical connection hole is through first insulating layer and the gate insulating layer and manifests corresponding institute
State polysilicon layer；A metal layer is formed on the bottom in second electrical connection hole and peripheral wall；And in first insulating layer
One second metal layer of upper formation, wherein the second metal layer is connected to by the metal layer at second electrical connection hole
The polysilicon layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that:
Production is through the first electrical connection hole of the second insulating layer and first insulating layer and in second insulation
A third metal layer is formed on layer, comprising: defines the figure to form the first electrical connection hole on the second insulating layer
Change photoresist；Using the figure photoresist as second insulating layer described in mask etching, first insulating layer and the grid
Insulating layer to form the first electrical connection hole, the first electrical connection hole through the second insulating layer, first insulating layer, with
And the gate insulating layer and manifest the corresponding polysilicon layer；And bottom and peripheral wall in first electrical connection hole
With a third metal layer is formed in the second insulating layer；
Wherein, production through the organic planarization layer third electrical connection hole and in the organic planarization layer formed with
In the step of anode layer that third electrical connection hole is connected, comprising: define in the organic planarization layer to be formed
The graphical photoresist in third electrical connection hole；It is organic planarization layer described in mask etching to form third using the figure photoresist
It is electrically connected hole, the third electrical connection hole is through the organic planarization layer and manifests the third metal layer；And described
Third, which is electrically connected on the bottom and peripheral wall and the organic planarization layer in hole, forms one the 4th metal layer, wherein is located at described organic
The 4th metal layer is formed by flatness layer as anode layer.
A kind of manufacturing method of organic light emitting diode display of the present invention further improvement lies in that: first insulation
Layer is SiNx layer, and the second insulating layer is SiNx layer.
The manufacturing method of organic light emitting diode display provided by the invention carries out initialization electricity using second metal layer
Vint bracing wire is pressed, it is possible to prevente effectively from influencing each other with anode layer, and opening area can be increased, improves brightness and service life.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing organic light emitting diode display.
Fig. 2 is the structural schematic diagram of organic light emitting diode display first embodiment of the present invention.
Fig. 3 is the structural schematic diagram of organic light emitting diode display second embodiment of the present invention.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to attached drawing.It should be noted that only the invention is illustrated in a schematic way for diagram provided in the present embodiment
Basic conception, only shown in schema then with related component in the present invention rather than component count, shape when according to actual implementation
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component cloth
Office's kenel may also be increasingly complex.
Present pre-ferred embodiments are provided with reference to the accompanying drawing, in order to explain the technical scheme of the invention in detail.
Referring to Fig. 2, it is the structural schematic diagram of organic light emitting diode display of the present invention in the first embodiment.
As shown in Fig. 2, organic light emitting diode display of the present invention includes:
One substrate 11, in the present embodiment, substrate 11 are the dielectric base formed by glass, quartz, ceramics or plastics,
Preferably, substrate 11 is glass substrate.
One polysilicon layer is set in substrate 11.In the present embodiment, the polysilicon layer is divided into positioned at first area
Polysilicon layer 121 and polysilicon layer 123 positioned at second area.
One gate insulating layer 13 in substrate 11 and covers the polysilicon layer.In the present embodiment, gate insulating layer
13 be preferably silicon nitride layer or silicon oxide layer.
One the first metal layer 14 is set on gate insulating layer 13.In the present embodiment, the first metal layer 14 of part is pair
It is located at the top of polysilicon layer 123 with answering.
One first insulating layer 15 on gate insulating layer 13 and covers the first metal layer 14.In the present embodiment, first
Insulating layer 15 is SiNx layer.
One second metal layer 16 is set on the first insulating layer 15.In the present embodiment, the second metal layer of part is neighbouring
In first area.In addition, the material of second metal layer 16 is identical as the material of the first metal layer 14.
One second insulating layer 17 on the first insulating layer 15 and covers second metal layer 16.In the present embodiment, second
Insulating layer 17 is SiNx layer.
Particularly, in the present embodiment, wherein the second metal layer 16 adjacent to first area is by being located at first area
And one second for running through one first electrical connection hole of second insulating layer 17 and the first insulating layer 15 and being connect with the first electrical connection hole
Electrical connection Kong Eryu polysilicon layer 121 connects and introduces initialization voltage Vint.Specifically: in the polysilicon for being located at first area
The surface of layer 121 opens up one first connecting hole A, the first connecting hole A through second insulating layer 17 and the first insulating layer 15 and shows
Expose corresponding polysilicon layer 121；One second electrical connection hole is opened up in the surface for the second metal layer 16 for being located at first area
B, the second electrical connection hole B is through second insulating layer 17 and manifests corresponding second metal layer 16；Again the first connecting hole A's
Third metal layer 18 is formed in bottom and peripheral wall, the bottom of the second electrical connection hole B and peripheral wall and second insulating layer 17, wherein the
Three metal layers 18 are connected to second metal layer 16 and polysilicon layer 121.
Furthermore it is in the present embodiment, similar with first connecting hole A of production above-mentioned, it, can be in polysilicon for second area
The both ends of layer 123 make the second connecting hole C, third connecting hole D, in the second connecting hole C, the bottom of third connecting hole D and peripheral wall
With third metal layer 19,20 is respectively formed in second insulating layer 17, and third metal layer 19,20 is connected to polysilicon layer 123.
One organic planarization layer 21 in second insulating layer 17 and covers third metal layer 18,19,20.
One anode layer 22 is set in organic planarization layer 21.In the present embodiment, anode layer 22 is by running through organic planarization layer
21 third is electrically connected hole E and is electrically connected the first electrical connection hole that hole E is connected positioned at second area, with third (to be connected with third
It is corresponding to meet hole D) and connect with polysilicon layer 123.Specifically: third electrical connection hole E, third electricity are opened up in organic planarization layer 21
Connecting hole E through organic planarization layer 21 to expose third metal layer 20, then in the bottom of third electrical connection hole E and peripheral wall and organic
The 4th metal layer 22 is formed on flatness layer 21, wherein the 4th metal layer 22 is formed by the organic planarization layer
As anode layer.
One pixel defining layer 23 in organic planarization layer 21 and covers anode layer 22, and pixel defining layer 23, which has, to be exposed
The opening F of anode layer.In the present embodiment, pixel defining layer 23 is acrylic based material or organic resin material.
Pixel electrode 24 in the opening F of pixel defining layer 23 and is covered in anode layer 22.
Organic light emitting diode display provided in first embodiment is carried out using the second metal layer of first area
Initialization voltage Vint bracing wire, in this way, initial voltage Vint line will not just conflict with the metal wire of the anode layer of second area, it can
Effectively to avoid influencing each other both in the prior art and have short-circuit short due to product PPI increases or luminous zone area increases
Risk, can increase opening area compared with the prior art, improve brightness and service life.
Manufacturing method for organic light emitting diode display in the first embodiment shown in Fig. 2 may include following
Step:
S101 provides a substrate 11, forms a polysilicon layer in substrate 11.In the present embodiment, it is formed in substrate 11 more
Crystal silicon layer specifically includes: using depositing operation, in 11 deposit polycrystalline silicon layer of substrate, applies photoresist and make litho pattern, shape
At the polysilicon layer 121 for being located at first area and positioned at the polysilicon layer 123 of second area.
S103 forms a gate insulating layer 13 on substrate 11 and polysilicon layer.In the present embodiment, gate insulating layer
13 be preferably silicon nitride layer or silicon oxide layer.
S105 forms a first metal layer 14 on gate insulating layer 13.In this embodiment, the first metal layer packet is formed
It includes: coating one layer of metal in the top of gate insulating layer 13, apply photoresist and make litho pattern, etch this layer of metal, shape
At the first metal layer 14.
S107 forms one first insulating layer 15 on gate insulating layer 13 and the first metal layer 14.In the present embodiment,
First insulating layer 15 is SiNx layer.
S109 forms a second metal layer 16 on the first insulating layer 15.In this embodiment, second metal layer 16 is formed to wrap
It includes: coating one layer of metal on the first insulating layer 15, coating photoresist simultaneously makes litho pattern, etches this layer of metal, forms the
Two metal layers 16.In the present embodiment, the second metal layer of part is adjacent to first area.In addition, second metal layer 16
Material is identical as the material of the first metal layer 14.
S111 forms a second insulating layer 17 on the first insulating layer 15 and second metal layer 16.In the present embodiment,
Second insulating layer 17 is SiNx layer.
S113, production are electrically connected hole and through second insulating layer through the first of second insulating layer 17 and the first insulating layer 15
17 the second electrical connection hole.In the present embodiment, first electrical connection of the production through second insulating layer 17 and the first insulating layer 15
Hole, comprising: the graphical photoresist to form the first electrical connection hole, the first electricity of definition are defined in second insulating layer 17
Connecting hole (the first connecting hole A, the second connecting hole C, third connecting hole D) is located at the top of the polysilicon layer；With the figure
Photoresist be mask etching second insulating layer 17, the first insulating layer 15 and gate insulating layer 13 with formed the first connecting hole A,
Second connecting hole C, third connecting hole D, the first connecting hole A, the second connecting hole C, third connecting hole D through second insulating layer 17,
First insulating layer 15 and gate insulating layer 13 simultaneously manifest corresponding polysilicon layer 121,123.Production runs through second insulating layer
17 the second electrical connection hole B, comprising: the graphical light to form the second electrical connection hole B is defined in second insulating layer 17
Photoresist, the second electrical connection hole B of definition are located at the top of second metal layer 16；Using the figure photoresist as mask etching second
For insulating layer 17 to form the second electrical connection hole B, the second electrical connection hole B is through second insulating layer 17 and manifests corresponding second gold medal
Belong to layer 16.
S115, in the bottom of the first connecting hole A and peripheral wall, the bottom of the second electrical connection hole B and peripheral wall and the second insulation
A third metal layer 18 is formed on layer 17, forms a third on the bottom of the second connecting hole C and peripheral wall and second insulating layer 17
Metal layer 19 forms a third metal layer 20 on the bottom of third connecting hole D and peripheral wall and second insulating layer 17.Specifically,
In the bottom of the first electrical connection hole (the first connecting hole A, the second connecting hole C, third connecting hole D) and peripheral wall, the second electrical connection hole B
Bottom and peripheral wall and second insulating layer 17 on coat one layer of metal, coating photoresist simultaneously make litho pattern, etch the layer
Metal forms third metal layer 18,19,20.In this way, second metal layer 16 by be located at first area the first connecting hole A with
The connection of polysilicon layer 121 simultaneously introduces initialization voltage Vint by third metal layer 18.
S117 forms an organic planarization layer 21 in second insulating layer 17 and covers third metal layer 18,19,20.
S119, production are electrically connected hole E through the third of organic planarization layer 21.In the present embodiment, production is through organic flat
The third of smooth layer 21 is electrically connected hole E, comprising: the figure to form third electrical connection hole E is defined in organic planarization layer 21
Change photoresist；Third electrical connection hole E, third electrical connection are formed as mask etching organic planarization layer 21 using the figure photoresist
Hole E runs through organic planarization layer 21 and manifests the third metal layer 20 positioned at second area.
S121 forms an anode layer 22 in organic planarization layer 21.In this embodiment, anode layer 22 is formed to specifically include:
The 4th metal layer connecting with third metal layer 20 is formed on the bottom of third electrical connection hole E and peripheral wall and organic planarization layer 21
22, wherein the 4th metal layer 22 is formed by organic planarization layer 21 i.e. as anode layer.In this way, anode layer 22 is just logical
It crosses third electrical connection hole E and third connecting hole D and is connected to polysilicon layer 123.
S123 forms a pixel defining layer 23 in the top of organic planarization layer 21, the top of anode 27.
S125 forms the opening F for exposing anode layer 22 in pixel defining layer 23.In the present embodiment, be open F, that is, conduct
Luminous zone.
S127 forms pixel electrode 24 in the opening F.In the present embodiment, pixel electrode 24 is organic light emission two
Pole pipe.
Referring to Fig. 3, it is the structural schematic diagram of organic light emitting diode display of the present invention in a second embodiment.
As shown in figure 3, organic light emitting diode display of the present invention includes:
One substrate 31, in the present embodiment, substrate 31 are the dielectric base formed by glass, quartz, ceramics or plastics,
Preferably, substrate 31 is glass substrate.
One polysilicon layer is set in substrate 31.In the present embodiment, the polysilicon layer is divided into positioned at first area
Polysilicon layer 321 and polysilicon layer 323 positioned at second area.
One gate insulating layer 33 in substrate 31 and covers the polysilicon layer.In the present embodiment, gate insulating layer
33 be preferably silicon nitride layer or silicon oxide layer.
One the first metal layer 34 is set on gate insulating layer 33.In the present embodiment, the first metal layer 34 of part is pair
It is located at the top of polysilicon layer with answering.
One first insulating layer 35 on gate insulating layer 33 and covers the first metal layer 34.In the present embodiment, first
Insulating layer 35 is SiNx layer.
One second metal layer 36 is set on the first insulating layer 35.In the present embodiment, in addition, the material of second metal layer 36
Expect identical as the material of the first metal layer 34.
Particularly, the second metal layer 36 of part is adjacent to first area and by being located at first area and through first
Second electrical connection hole a of insulating layer 35 connect with polysilicon layer 321 and introduces initialization voltage Vint.Specifically: being located at the
The surface of the polysilicon layer 321 in one region opens up the second electrical connection hole a, and the second electrical connection hole a runs through the first insulating layer 35,
Second metal layer 36 is formed on the bottom of second electrical connection hole a and peripheral wall and the first insulating layer 35, wherein second metal layer 36 connects
It is connected to polysilicon layer 321.
One second insulating layer 37 on the first insulating layer 35 and covers second metal layer 36.In the present embodiment, second
Insulating layer 37 is SiNx layer.
One organic planarization layer 40 is set to second insulating layer 37.
One anode layer 41 is set in organic planarization layer 40, and in the present embodiment, anode layer 41 is by being located at second area, passing through
Wear the first electrical connection hole of second insulating layer 37 and the first insulating layer 35 and be electrically connected hole through the third of organic planarization layer 40 and
It is connect with polysilicon layer.Specifically: opening up second on second insulating layer 37, the first insulating layer 35 and gate insulating layer 33
Connecting hole c, the second connecting hole c manifest corresponding polysilicon layer 323, exhausted in the bottom of the second connecting hole c and peripheral wall and second
Third metal layer 39 is formed in edge layer 37；Third electrical connection hole d is opened up, in organic planarization layer 40 to expose third metal layer
39, the 4th metal layer 41 is formed on the bottom of third electrical connection hole d and peripheral wall and organic planarization layer 40, wherein is located at described
The 4th metal layer 41 is formed by organic planarization layer can be used as anode layer.
One pixel defining layer 42 is set in organic planarization layer 40 and covers anode layer 41, and pixel defining layer 42, which has, exposes sun
The opening e of pole layer.In the present embodiment, pixel defining layer 42 is acrylic based material or organic resin material.
Pixel electrode 43 in the opening e of pixel defining layer 42 and is covered in anode layer 41.
Organic light emitting diode display provided in second embodiment needs to increase by one compared to the first embodiment
Road light shield manufacture second is electrically connected hole a, and using a part of second metal layer 36, initial voltage Vint is imported polysilicon layer
321, in this way, initial voltage Vint line will not just conflict with the metal wire of the anode layer of second area, it is possible to prevente effectively from existing
It influences each other both in technology and has the risk of short-circuit short because product PPI increases or luminous zone area increases, it is relatively existing
Technology can increase opening area, improve brightness and service life.
Manufacturing method for organic light emitting diode display in a second embodiment shown in Fig. 3 may include following
Step:
S201 provides a substrate 31, forms a polysilicon layer in substrate 31.In the present embodiment, it is formed in substrate 31 more
Crystal silicon layer specifically includes: using depositing operation, in 31 deposit polycrystalline silicon layer of substrate, applies photoresist and make litho pattern, shape
At the polysilicon layer 321 for being located at first area and positioned at the polysilicon layer 323 of second area.
S203 forms a gate insulating layer 33 on substrate 31 and polysilicon layer.In the present embodiment, gate insulating layer
33 be preferably silicon nitride layer or silicon oxide layer.
S205 forms a first metal layer 34 on gate insulating layer 33.In this embodiment, the first metal layer packet is formed
It includes: coating one layer of metal in the top of gate insulating layer 33, apply photoresist and make litho pattern, etch this layer of metal, shape
At the first metal layer 34.
S207 forms one first insulating layer 35 on gate insulating layer 33 and the first metal layer 34.In the present embodiment,
First insulating layer 35 is SiNx layer.
S209 forms a second metal layer 36 on the first insulating layer 35.In this embodiment, second metal layer 36 is formed to wrap
It includes: defining the graphical photoresist to form the second electrical connection hole a on the first insulating layer 35 for being located at first area, it is fixed
Second electrical connection hole a of justice is located at the top of the polysilicon layer；Using the figure photoresist as the first insulating layer of mask etching
35 and gate insulating layer 33 with formed second electrical connection hole a, second electrical connection hole a run through the first insulating layer 35 and gate insulating layer
33 and manifest the corresponding polysilicon layer 321；On the first insulating layer 35 and on the bottom of the second electrical connection hole a and peripheral wall
One layer of metal is coated, photoresist is applied and makes litho pattern, etches this layer of metal, forms second metal layer 36, wherein be located at
The part second metal layer 36 of first area connect with polysilicon layer 321 by the second electrical connection hole a and introduces initialization voltage
Vint.In addition, the material of second metal layer 36 is identical as the material of the first metal layer 34.
S311 forms a second insulating layer 37 on the first insulating layer 35 and second metal layer 36.In the present embodiment,
Second insulating layer 37 is SiNx layer.
S313, in second area, production is through the first electrical connection hole of second insulating layer 37 and the first insulating layer 35.At this
In embodiment, production is through the first electrical connection hole of second insulating layer 37 and the first insulating layer 35, comprising: in second insulating layer 37
On define graphical photoresist to form the first electrical connection hole, the first electrical connection hole of definition is located at polysilicon layer 323
Top；Using the figure photoresist as mask etching second insulating layer 37, the first insulating layer 35 and gate insulating layer 33 with
Forming the first electrical connection hole, (the first connecting hole b, the second connecting hole c), the first connecting hole b, the second connecting hole c are through the second insulation
The 37, first insulating layer 35 of layer and gate insulating layer 33 simultaneously manifest corresponding polysilicon layer 323.
S315 forms a third metal layer 38 on the bottom of the first connecting hole b and peripheral wall and second insulating layer 37,
Third metal layer 39 is formed on the bottom of two connecting hole c and peripheral wall and second insulating layer 37.Specifically, in 37 He of second insulating layer
One layer of metal is coated on first connecting hole b, the bottom of the second connecting hole c and peripheral wall, apply photoresist and makes litho pattern, is carved
This layer of metal is lost, third metal layer 38,39 is formed.
S317 forms an organic planarization layer 40 in second insulating layer 37 and covers third metal layer 38,39.
S319, production are electrically connected hole d through the third of organic planarization layer 40.In the present embodiment, production is through organic flat
The third of smooth layer 40 is electrically connected hole d, comprising: the figure to form third electrical connection hole d is defined in organic planarization layer 40
Change photoresist；Third electrical connection hole d, third electrical connection are formed as mask etching organic planarization layer 40 using the figure photoresist
Hole d runs through organic planarization layer 40 and manifests the third metal layer 39 positioned at second area.
S321 forms an anode layer 41 in organic planarization layer 40.In this embodiment, anode layer 41 is formed to specifically include:
The 4th metal layer connecting with third metal layer 39 is formed on the bottom of third electrical connection hole d and peripheral wall and organic planarization layer 40
41, wherein the 4th metal layer 41 is formed by organic planarization layer 40 i.e. as anode layer.In this way, anode layer 41 is just logical
It crosses third electrical connection hole d and the second connecting hole c and is connected to polysilicon layer 323.
S323 forms a pixel defining layer 42 in the top of organic planarization layer 40, the top of anode 27.
S325 forms the opening e for exposing anode layer 41 in pixel defining layer 42.In the present embodiment, be open e, that is, conduct
Luminous zone.
S327 forms pixel electrode 43 in the opening e.In the present embodiment, pixel electrode 43 is organic light emission two
Pole pipe.
Particular embodiments described above, the technical issues of to solution of the invention, technical scheme and beneficial effects carry out
It is further described, it should be understood that the above is only a specific embodiment of the present invention, is not limited to
The present invention, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in this
Within the protection scope of invention.
Claims (14)
1. a kind of organic light emitting diode display, a polysilicon layer and a grid including a substrate, in the substrate
Insulating layer, the first metal layer on the gate insulating layer and one first insulating layer are set on first insulating layer
A second metal layer and a second insulating layer, the organic planarization layer in the second insulating layer, it is characterised in that: portion
Point the second metal layer by the first electrical connection hole through the second insulating layer and first insulating layer with it is described
Polysilicon layer connection；
The organic light emitting diode display is divided into first area and second area；
First electrical connection hole includes the first connecting hole, the second connecting hole and third connecting hole；
The second electrical connection hole, second electrical connection hole are formed with right above the second metal layer in the first area
Through the second insulating layer and manifest the corresponding second metal layer；
The bottom in first electrical connection hole and peripheral wall, the bottom in second electrical connection hole and peripheral wall and the second insulating layer
Upper formation third metal layer, the third metal layer on first connecting hole are connected to the second metal layer and described more
Crystal silicon layer, the third metal layer on second connecting hole are connected with the third metal layer on the third connecting hole
In the polysilicon layer；
The second metal layer is metal layer where initialization voltage line.
2. organic light emitting diode display as described in claim 1, which is characterized in that further include:
An anode layer and a pixel defining layer in the organic planarization layer, the pixel defining layer, which has, exposes the sun
Pole layer opening, the anode layer by through the organic planarization layer third be electrically connected hole and be located at second area, with
The third is electrically connected the connected third connecting hole in hole and connect with the polysilicon layer；And
In the opening of the pixel defining layer and it is covered in the pixel electrode of the anode layer.
3. organic light emitting diode display as described in claim 1, which is characterized in that first insulating layer is SiNx
Layer, the second insulating layer are SiNx layer.
4. a kind of manufacturing method of organic light emitting diode display characterized by comprising
One substrate is provided, forms a polysilicon layer and a gate insulating layer on the substrate；
A first metal layer and one first insulating layer are formed on the gate insulating layer；
A second metal layer and a second insulating layer are formed on the first insulating layer, and the second metal layer is initialization electricity
Metal layer where crimping；
Production is through the first electrical connection hole of the second insulating layer and first insulating layer, the second metal layer of part
It is connect by first electrical connection hole with the polysilicon layer, first electrical connection hole includes the first connecting hole, the second company
Connect hole and third connecting hole；And
An organic planarization layer is formed on the second insulating layer；
Third electrical connection hole of the production through the organic planarization layer and formation and the third electricity in the organic planarization layer
The connected anode layer of connecting hole, the anode layer is electrically connected hole and is electrically connected hole with the third by the third to be connected
Third connecting hole and connect with the polysilicon layer；
A pixel defining layer is formed in the organic planarization layer and the anode layer, the pixel defining layer corresponds to the anode
Layer forms the opening for exposing the anode layer；And
The pixel electrode for being covered in the anode layer is formed in the opening；
Wherein, in production through the first electrical connection hole of the second insulating layer and first insulating layer, described the of part
In the step of two metal layers are connect by first electrical connection hole with the polysilicon layer, comprising:
Production is through the first electrical connection hole of the second insulating layer and first insulating layer: fixed on the second insulating layer
Justice goes out the graphical photoresist to form the first electrical connection hole, and the first electrical connection hole of definition is located at the upper of the polysilicon layer
Side；Using the figure photoresist as second insulating layer described in mask etching, first insulating layer and the gate insulating layer
To form the first electrical connection hole, the first electrical connection hole is through the second insulating layer, first insulating layer and described
Gate insulating layer simultaneously manifests the corresponding polysilicon layer；
Production is through the second electrical connection hole of the second insulating layer: is defined on the second insulating layer to form second
It is electrically connected the graphical photoresist in hole, the second electrical connection hole of definition is located at the top of the second metal layer；With the figure
Photoresist is mask etching second insulating layer to form the second electrical connection hole, and the second electrical connection hole is through second insulation
Layer and the second metal layer for manifesting part；And
In the bottom in first electrical connection hole and peripheral wall, the bottom in second electrical connection hole and peripheral wall and described second
Third metal layer is formed on insulating layer, so that the partial second metal layer passes through the third metal layer and the polysilicon
Layer connection.
5. the manufacturing method of organic light emitting diode display as claimed in claim 4, which is characterized in that run through institute in production
It states the third electrical connection hole of organic planarization layer and is formed in the organic planarization layer and be electrically connected hole is connected one with the third
In the step of anode layer, comprising:
The graphical photoresist to form third electrical connection hole is defined in the organic planarization layer；
Third electrical connection hole, the third electrical connection are formed as organic planarization layer described in mask etching using the figure photoresist
Hole is through the organic planarization layer and manifests the third metal layer；And
The 4th metal layer is formed on the bottom in third electrical connection hole and peripheral wall and the organic planarization layer, wherein is located at
The 4th metal layer is formed by the organic planarization layer as anode layer.
6. the manufacturing method of organic light emitting diode display as claimed in claim 4, which is characterized in that first insulation
Layer is SiNx layer, and the second insulating layer is SiNx layer.
7. a kind of organic light emitting diode display, a polysilicon layer and a grid including a substrate, in the substrate
Insulating layer, the first metal layer on the gate insulating layer and one first insulating layer are set on first insulating layer
A second metal layer and a second insulating layer, the organic planarization layer in the second insulating layer, it is characterised in that: portion
The second metal layer divided is connect by the second electrical connection hole through first insulating layer with the polysilicon layer；
The first electrical connection hole, first electrical connection are offered on second insulating layer, the first insulating layer and gate insulating layer
Hole includes the first connecting hole and the second connecting hole；Shape on the bottom in first electrical connection hole and peripheral wall and the second insulating layer
At there is third metal layer, the third metal layer is connected to the polysilicon layer；Second electrical connection hole runs through described first
Insulating layer forms the second metal layer on the bottom in second electrical connection hole and peripheral wall and first insulating layer；
Second metal layer is metal layer where initialization voltage line.
8. organic light emitting diode display as claimed in claim 7, which is characterized in that further include:
An anode layer and a pixel defining layer in the organic planarization layer, the pixel defining layer, which has, exposes the sun
The opening of pole layer, the anode layer is by being electrically connected hole through the first of the second insulating layer and first insulating layer and passing through
Wear polysilicon layer connection described in the third electrical connection Kong Eryu of the organic planarization layer；And
In the opening of the pixel defining layer and it is covered in the pixel electrode of the anode layer.
9. organic light emitting diode display as claimed in claim 7, which is characterized in that first insulating layer is SiNx
Layer, the second insulating layer are SiNx layer.
10. a kind of manufacturing method of organic light emitting diode display characterized by comprising
One substrate is provided, forms a polysilicon layer and a gate insulating layer on the substrate；
A first metal layer and one first insulating layer are formed on the gate insulating layer；
Production is electrically connected hole through the second of first insulating layer and forms a second metal layer on the first insulating layer,
Wherein, the second metal layer of part is connect by second electrical connection hole with the polysilicon layer；
Second insulating layer is formed on first insulating layer and the second metal layer；And
An organic planarization layer is formed on the second insulating layer；
Production is through the first electrical connection hole and on the second insulating layer of the second insulating layer and first insulating layer
A third metal layer is formed, the third metal layer is connected to the polysilicon layer by first electrical connection hole；
Wherein, first electrical connection hole includes the first connecting hole and the second connecting hole, and second metal layer is initialization voltage line
Place metal layer.
11. the manufacturing method of organic light emitting diode display as claimed in claim 10, which is characterized in that further include:
Third electrical connection hole of the production through the organic planarization layer and formation and the third electricity in the organic planarization layer
The connected anode layer of connecting hole, the third electrical connection hole are electrically connected hole with described first and are connected, and the anode layer passes through institute
Third electrical connection hole is stated to connect with polysilicon layer described in the first electrical connection Kong Eryu；
A pixel defining layer is formed in the organic planarization layer and the anode layer, the pixel defining layer corresponds to the anode
Layer forms the opening for exposing the anode layer；And
The pixel electrode for being covered in the anode layer is formed in the opening.
12. the manufacturing method of organic light emitting diode display as claimed in claim 11, which is characterized in that production runs through institute
It states the second electrical connection hole of the first insulating layer and forms a second metal layer on the first insulating layer, comprising:
The graphical photoresist to form the second electrical connection hole is defined on the first insulating layer, and the second of definition is electrically connected
Connect the top that hole is located at the polysilicon layer；
It is the first insulating layer described in mask etching and the gate insulating layer to form the second electrical connection using the figure photoresist
Hole, the second electrical connection hole is through first insulating layer and the gate insulating layer and manifests the corresponding polysilicon
Layer；
A metal layer is formed on the bottom in second electrical connection hole and peripheral wall；And
A second metal layer is formed on the first insulating layer, wherein the second metal layer is electrically connected by described second
Metal layer at hole and be connected to the polysilicon layer.
13. the manufacturing method of organic light emitting diode display as claimed in claim 12, which is characterized in that
Production is through the first electrical connection hole and on the second insulating layer of the second insulating layer and first insulating layer
Form a third metal layer, comprising:
The graphical photoresist to form the first electrical connection hole is defined on the second insulating layer；
Using the figure photoresist as second insulating layer described in mask etching, first insulating layer and the gate insulator
For layer to form the first electrical connection hole, the second insulating layer, first insulating layer, Yi Jisuo are run through in first electrical connection hole
It states gate insulating layer and manifests the corresponding polysilicon layer；And
A third metal layer is formed on the bottom in first electrical connection hole and peripheral wall and the second insulating layer；
Wherein, production through the organic planarization layer third electrical connection hole and in the organic planarization layer formed with it is described
Third was electrically connected in the step of connected anode layer in hole, comprising:
The graphical photoresist to form third electrical connection hole is defined in the organic planarization layer；
Third electrical connection hole, the third electrical connection are formed as organic planarization layer described in mask etching using the figure photoresist
Hole is through the organic planarization layer and manifests the third metal layer；And
One the 4th metal layer is formed on the bottom in third electrical connection hole and peripheral wall and the organic planarization layer, wherein position
In being formed by the 4th metal layer in the organic planarization layer as anode layer.
14. the manufacturing method of organic light emitting diode display as claimed in claim 10, which is characterized in that described first absolutely
Edge layer is SiNx layer, and the second insulating layer is SiNx layer.
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| CN201510083815.5A CN105990398B (en) | 2015-02-16 | 2015-02-16 | Organic light emitting diode display and its manufacturing method |
| JP2015144201A JP6141915B2 (en) | 2015-02-16 | 2015-07-21 | Organic light emitting diode display and manufacturing method thereof |
| KR1020150115381A KR101799306B1 (en) | 2015-02-16 | 2015-08-17 | OLED display and its manufacturing method |
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| CN201510083815.5A CN105990398B (en) | 2015-02-16 | 2015-02-16 | Organic light emitting diode display and its manufacturing method |
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| US10497685B2 (en) | 2017-12-26 | 2019-12-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Micro LED display panel and manufacturing method thereof |
| CN108288455A (en) * | 2018-03-05 | 2018-07-17 | 昆山国显光电有限公司 | Organic light emitting display panel and display device |
| EP3801542B1 (en) | 2018-06-06 | 2022-08-10 | Poxel SA | Methods of treating subjects having diabetes with chronic kidney disease |
| MX2020013567A (en) | 2018-06-14 | 2021-05-27 | Poxel | Film-coated tablet comprising a triazine derivative for use in the treatment of diabetes. |
| CN112086576B (en) * | 2020-09-07 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method |
| CN112117234A (en) * | 2020-09-27 | 2020-12-22 | 福建华佳彩有限公司 | Blind hole screen backboard structure and manufacturing method |
| CN113380144B (en) * | 2021-06-07 | 2022-11-25 | 武汉天马微电子有限公司 | Display panel and display device |
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| CN105990398A (en) | 2016-10-05 |
| JP6141915B2 (en) | 2017-06-07 |
| KR101799306B1 (en) | 2017-12-20 |
| JP2016152230A (en) | 2016-08-22 |
| KR20160100787A (en) | 2016-08-24 |
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Address after: 1568 Jiugong Road, Jinshan Industrial Zone, Jinshan District, Shanghai, 201506 Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201508, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |