CN105990129B - Semiconductor devices and forming method thereof - Google Patents
Semiconductor devices and forming method thereof Download PDFInfo
- Publication number
- CN105990129B CN105990129B CN201510053617.4A CN201510053617A CN105990129B CN 105990129 B CN105990129 B CN 105990129B CN 201510053617 A CN201510053617 A CN 201510053617A CN 105990129 B CN105990129 B CN 105990129B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- sacrificial layer
- opening
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
A kind of semiconductor devices and forming method thereof, wherein forming method includes: offer substrate；Barrier layer is formed on the substrate；Partial barrier is removed, forms the first opening for exposing substrate in barrier layer；Sacrificial layer material is filled in the first opening；Remaining barrier layer is removed, sacrificial layer is formed；The section substrate that sacrificial layer exposes is removed, forms the second opening in substrate；Metal layer is formed in the second open bottom and sacrificial layer upper surface；Remove the sacrificial layer.The present invention is before forming sacrificial layer, barrier layer is formed over the substrate, the first opening is formed in barrier layer, sacrificial layer material is filled in first opening, to form sacrificial layer, makes the sacrificial layer positioned at edge that there is enough thickness, it avoids the loss due to sacrificial layer described when forming the second opening and exposes the substrate, the film layer for reducing sacrificial layer edge after removing sacrificial layer is remaining, improves the yields of device manufacture, reduces the cost of device manufacture.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of semiconductor devices and forming method thereof.
Background technique
In fabrication of semiconductor device, need that various film layer figures are formed on the substrate using microfabrication technology
Shape.One of most common method for forming film layer figure is etching (Etch).In addition to etching, stripping technology (Lift-off
It Process is) another microfabrication technology for forming film layer figure, it is capable of forming from nanometer scale to centimetres
Various micro-structures.
Stripping technology is a kind of side for using expendable material (such as photoresist) in the surface of substrate formation target material structure
Method.It avoids the problem of dry method, substrate damage and ionic soil in wet etching, and simple process, is very suitable for gold
Belong to graphical.
Specifically, referring to figs. 1 to Fig. 3, showing a kind of schematic diagram of each step of stripping technology of the prior art.
As shown in Figure 1, provide substrate 10, be formed with separation layer 11 and bonding metal layer 12 on the substrate 10, it is described every
Absciss layer 11 covers 10 upper surface of substrate, separation layer 11 described in 12 covering part of bonding metal layer.In the substrate 10
Upper formation sacrificial layer 13, the sacrificial layer 13 cover the separation layer 11 and bond wire that surface does not need covering metal film
Layer 12.It is later mask with the sacrificial layer 13, substrate 10 is performed etching, forms opening 14 in substrate 10.
As shown in Fig. 2, forming metal layer 15, the metal layer 15 covers 13 surface of sacrificial layer and the opening 14
Bottom, the metal layer in 14 bottoms of the opening are in contact with the substrate 10.
As shown in figure 3, removing the sacrificial layer 13, expose the bonding metal layer 12 and the separation layer 11.Specifically,
Substrate is soaked in stripper, the stripper is the solution not reacted with metal layer, with the removal of sacrificial layer 13,
Metal layer 15 on the sacrificial layer 13 is also removed together, only retains the metal layer 15 of 14 bottoms of the opening.
However, being easy to appear on sacrificial layer 13 and the sacrificial layer using the semiconductor devices that the prior art is formed
The problem of metal layer 15 remains.
Summary of the invention
Problems solved by the invention is to provide a kind of semiconductor devices and forming method thereof, reduces sacrificial layer residual and sacrificial
The problem of metal layer on domestic animal layer remains.
To solve the above problems, the present invention provides a kind of method for forming semiconductor devices, include the following steps:
Substrate is provided；
Barrier layer is formed over the substrate；
Partial barrier is removed, forms the first opening for exposing substrate in the barrier layer；
Sacrificial layer material is filled in first opening；
Remaining barrier layer is removed, sacrificial layer is formed；
The section substrate that sacrificial layer exposes is removed, forms the second opening in the substrate；
Metal layer is formed in second open bottom and the sacrificial layer upper surface；
Remove the sacrificial layer.
Optionally, after the step of substrate is provided, over the substrate before the step of formation barrier layer, the formation side
Method further include: form separation layer over the substrate, the separation layer covers the substrate；Bonding is formed on the separation layer
Metal layer, the bonding metal layer part cover the separation layer；In the step of forming the first opening in the barrier layer, institute
It states the first opening and also exposes the bonding metal layer.
Optionally, the barrier material is silica.
Optionally, the step of forming barrier layer over the substrate includes: the technique using chemical vapor deposition described
Barrier layer is formed on substrate.
Optionally, the thickness on the barrier layer is greater than 3 μm.
Optionally, the step of removing partial barrier, forming the first opening for exposing the substrate in the barrier layer
Include: that partial barrier is removed using dry etching, forms the first opening for exposing the substrate inside the barrier layer.
Optionally, the material of the sacrificial layer is photoresist.
Optionally, after in first opening the step of filling sacrificial layer material, remaining barrier layer is removed, is formed and is sacrificed
Before the step of layer, the forming method further include: remove the sacrificial layer on the barrier layer.
Optionally, the step of sacrificial layer removed on the barrier layer includes: that carving technology is used back to remove the resistance
Sacrificial layer in barrier.
Optionally, the step of removing remaining barrier layer, forming sacrificial layer includes: to remove residue using hydrofluoric acid wet etching
Barrier layer.
Optionally, the step of removing section substrate, forming the second opening in the substrate includes: using anisotropic dry
Method etches to form second opening；
After the step of forming the described second opening, remaining sacrificial layer thickness is greater than 3 μm.
It optionally, include: to adopt the step of second open bottom and the sacrificial layer upper surface form metal layer
The metal layer is formed with the method that electron beam is grown.
Optionally, the metal layer material is titanium.
Optionally, the step of removal sacrificial layer includes: to remove the sacrificial layer using wet processing.
Optionally, the sacrificial layer is photoresist；In removing wet processing used by the sacrificial layer, etching solution
For the mixed solution of sulfuric acid and hydrogen peroxide.
Semiconductor devices is formed by by the forming method correspondingly, the present invention also provides one kind.
Compared with prior art, technical solution of the present invention has the advantage that
The present invention forms barrier layer before forming sacrificial layer over the substrate, and the first opening is formed in barrier layer,
Sacrificial layer material is filled in first opening, to form sacrificial layer.Since the sacrificial layer is formed in the first opening, because
The angle of this described sacrificial layer outer profile and the upper surface of substrate and after forming the first opening, remaining barrier layer side wall with it is described
The angle of upper surface of substrate is complementary, by controlling the angle shown on remaining barrier layer side wall and the substrate, controls described sacrificial
The angle of domestic animal layer outer profile and the upper surface of substrate, realizing makes the sacrificial layer positioned at edge have enough thickness, avoids
The substrate is exposed due to the loss of sacrificial layer when forming the second opening, avoid the metal layer that is subsequently formed with it is described
Substrate directly contacts, and is conducive to stripping technology and completely removes metal layer on sacrificial layer and sacrificial layer, reduces sacrificial layer side
The film layer of edge is remaining, improves the yields of device manufacture, reduces the cost of device manufacture.
Detailed description of the invention
Fig. 1 to Fig. 3 is a kind of schematic diagram of each step of stripping technology of the prior art；
Fig. 4 and Fig. 5 is sacrificial layer and the remaining schematic diagram of metal layer in the prior art；
Fig. 6 to Figure 12 is that the structure of each step in one embodiment of method for forming semiconductor devices provided by the present invention is shown
It is intended to.
Specific embodiment
It can be seen from background technology that be easy to appear the problem of sacrificial layer and metal layer remain, knot in existing stripping technology technology
The reason of the step of closing stripping technology, analysis residue problem:
As shown in figure 4, in the certain positions of chip (the mainly position of Waffer edge), due to 23 formation process of sacrificial layer
Limitation, the outline (Profile) of the sacrificial layer 23 of formation and the inclination alpha on 21 surface of separation layer are smaller, therefore are located at
23 thinner thickness of sacrificial layer at 21 edge of separation layer.And during being subsequently formed 20 inner opening 24 of substrate, it needs that portion is lost
The sacrificial layer 23 divided.When inclination alpha is too small (at typically less than 75 °), due to sacrificial layer 23 formed opening 24 during
Loss after opening 24 is formed, can expose the part separation layer 21 close to opening 24.Metal is formed on sacrificial layer 23 again later
When layer 25, the metal layer 25 is easy directly to contact with the separation layer 21 at close opening 24.With 23 phase of sacrificial layer
Than the adhesiveness of the metal layer 25 and the separation layer 21 is higher, therefore removes the mistake of the sacrificial layer 23 in stripping technology
Cheng Zhong, stripping technology can not completely remove the metal layer 25 positioned at 21 edge of separation layer, thus in 21 marginal position shape of separation layer
Film forming layer remnants 30 (as shown in Figure 5), to influence the performance of formed semiconductor.
To solve the technical problem, the present invention provides a kind of forming method of semiconductor devices, includes the following steps:
Substrate is provided；Barrier layer is formed over the substrate；Partial barrier is removed, is formed and is exposed in the barrier layer
First opening of substrate；Sacrificial layer material is filled in first opening；Remaining barrier layer is removed, sacrificial layer is formed；Removal
The section substrate that sacrificial layer exposes forms the second opening in the substrate；In second open bottom and the sacrifice
Layer upper surface forms metal layer；Remove the sacrificial layer.
Before forming sacrificial layer, barrier layer is formed over the substrate, the first opening is formed in barrier layer, described
Sacrificial layer material is filled in first opening, to form sacrificial layer.It is described since the sacrificial layer is formed in the first opening
After the first opening of angle and formation of sacrificial layer outer profile and the upper surface of substrate, on remaining barrier layer side wall and the substrate
The angle on surface is complementary, by controlling the angle shown on remaining barrier layer side wall and the substrate, controls outside the sacrificial layer
The angle of profile and the upper surface of substrate, realizing makes the sacrificial layer positioned at edge have enough thickness, avoids due to shape
Expose the substrate at the loss of sacrificial layer when the second opening, avoids the metal layer being subsequently formed and the substrate is straight
Contact is conducive to stripping technology and completely removes metal layer on sacrificial layer and sacrificial layer, reduces the film at sacrificial layer edge
Layer is remaining.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 6 to Figure 12 is that the structure of each step in one embodiment of method for forming semiconductor devices provided by the present invention is shown
It is intended to.
With reference to Fig. 6, substrate 101 is provided, forms barrier layer 110 in the semiconductor substrate 101.
The substrate 101 is the workbench of subsequent technique.The material of the substrate 101 be selected from monocrystalline silicon, polysilicon or
Person's amorphous silicon；The substrate 101 can also be selected from silicon, germanium, GaAs or silicon Germanium compound；The substrate 101 is also selected from
With epitaxial layer or epitaxial layer silicon-on；The substrate 101 can also be other semiconductor materials, and the present invention does not appoint this
What is limited.The material of substrate 101 described in the present embodiment is silicon.
It should be noted that the semiconductor devices is subsequently used for carrying out with another semiconductor devices in the present embodiment
Metal bonding.Therefore it provides after the step of substrate 101, before the step of forming barrier layer 110 on the substrate 101, institute
State forming method further include: separation layer 102 is formed on the substrate 101, the separation layer 102 covers the substrate 101；?
Bonding metal layer 103, separation layer 102 described in 103 covering part of bonding metal layer are formed on the separation layer 102.
The separation layer 102 prevents bonding gold for realizing being isolated between bonding metal layer 103 and the substrate 101
The atom for belonging to layer 103, which is diffused into the semiconductor substrate 101, pollutes substrate, and furthermore the separation layer 102 is also forming bonding
Etching stop layer is used as during metal layer.In the present embodiment, the material of the separation layer 102 is silica, can be passed through
To the substrate 101 carry out oxidation technology acquisition, or by chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or
The modes such as person's boiler tube are formed.
The bonding metal layer 103 is used as the metal intermediate layer in eutectic bonding technique, with another semiconductor devices table
The metal combination in face, combines wafer.In the present embodiment, subsequent wafer bonding is bonded using germanium aluminum metal, the other half is led
The metal of body device surface is aluminium.Therefore, in the present embodiment, 103 material of bonding metal layer is germanium metal.
It should be noted that 103 part of bonding metal layer covers the separation layer 102.Form the bond wire
The step of layer 103 includes: the formation bond wire material layer on the separation layer 102, etches the bond wire material layer shape
At the patterned bonding metal layer 103.It should be noted that during etching the bond wire material layer, institute
It states separation layer 102 and plays the role of etching stopping.
The barrier layer 110 surrounds the first opening with the substrate 101 for subsequent together.In the present embodiment, the resistance
110 material of barrier is silica.Specifically, the barrier layer 110 can be formed by the way of chemical vapor deposition.
It should be noted that the thickness on the barrier layer 110 is related to the depth for first opening being subsequently formed, into
And it is related to the thickness of sacrificial layer filling first opening and being formed, the depth of first opening is not less than subsequent needs
The thickness of the sacrificial layer formed.In the present embodiment, the barrier layer 110 with a thickness of be greater than 3 μm.
With reference to Fig. 7, partial barrier 110 is removed, forms the first opening 120 in the remaining barrier layer 110.
Specifically, removing partial barrier 110 using the technique of dry etching, remaining partial barrier 110 is described
The first opening 120 is surrounded on substrate.
It should be noted that the depth H of the first opening 120 is related to the thickness on the barrier layer 110: if described first
Opening 120 depth H it is too small, then first opening 120 side walls height it is too low, can make it is subsequent it is described first opening 120 in fill out
The thickness of the sacrificial layer filled is excessively thin, and excessively thin sacrificial layer is difficult to play protection substrate during forming the substrate inner opening
101, it is also difficult to which isolation is formed by metal layer and substrate 101 in stripping technology；If the depth H of the first opening 120 is excessive,
The Sidewall Height of so described first opening 120 is excessively high, then be easy to cause the waste of material or increase technology difficulty.This implementation
In example, the depth H of first opening 120 is greater than 3 μm, and the Sidewall Height of first opening 120 is greater than 3 μm.
It should also be noted that, the side wall of first opening 120 is made of remaining barrier layer 110, it is subsequent described
Filling forms sacrificial layer in first opening 120, the angle of the side wall of the sacrificial layer and 101 upper surface of substrate with it is described remaining
110 side wall of barrier layer is complementary with the angle of 101 upper surface of substrate, can by control the remaining barrier layer 110 with
The angle of 101 upper surface of substrate, controls subsequent formed sacrificial layer side wall and the angle of 101 upper surface of substrate is big
It is small.Therefore, the method in the present embodiment using dry etching forms first opening 120, the remaining barrier layer 110 with
The angle γ of 101 upper surface of substrate is not more than 90 °.
It needs further exist for illustrating, in the present embodiment, separation layer 102 and bonding metal layer is formed on substrate 101
103, the first opening 120 formed in barrier layer 110 exposes the bonding metal layer 103.In addition, being used to form described first
Opening 120 is dry-etched in stopping when exposing substrate 101.Therefore on the substrate 101, first opening
In 120, it is not bonded the separation layer 102 of the covering of metal layer 103 while being removed yet.
With reference to Fig. 8, sacrificial layer material 130a is filled in first opening 120.
The sacrificial layer material 130a is subsequently used for forming the sacrificial layer.In the present embodiment, the sacrificial layer material
130a is photoresist.Specifically, filling the sacrificial layer material in first opening 120 by the techniques such as coating and drying
Expect 130a.
It should be noted that described first opens since the sacrificial layer material 130a is filled in first opening 120
Mouth 120 is surrounded by remaining barrier layer 110 and substrate 101, therefore on the sacrificial layer material 130a side wall and the substrate 101
The angle β on surface is complementary with the angle γ of 101 upper surface of substrate with remaining 110 side wall of barrier layer, can pass through control
The size of 110 side wall of remaining barrier layer and the angle γ of 101 upper surface of substrate, controls the sacrificial layer material
The size of 130a and the 101 upper surface angle β of substrate.In the present embodiment, the angle γ is not more than 90 °, therefore the folder
Angle beta is not less than 90 °.
In conjunction with reference Fig. 9, remaining barrier layer 110 is removed, forms sacrificial layer 130.
It should be noted that being removed remaining after the step of filling sacrificial layer material 130a in first opening 120
Before the step of barrier layer 110, formation sacrificial layer 130, the forming method further include: remove sacrificial on remaining barrier layer 110
Domestic animal layer material.Specifically, removing the sacrificial of remaining 110 top of barrier layer using carving technology (Etch Back) is returned in the present embodiment
Domestic animal layer 130.But the concrete technology of the sacrificial layer 130 at remaining 110 top of barrier layer of removal is also an option that grinding (Grind)
Or the technique of chemical mechanical grinding (Chemical Mechanical Polishing, CMP), the present invention are without limitation.
After removing the sacrificial layer material on remaining barrier layer 110, the remaining barrier layer is removed using wet etching
110, form sacrificial layer 130.
Specifically, the material due to barrier layer 110 is silica, in the present embodiment, removed using hydrofluoric acid wet etching
Remaining barrier layer 110.
The effect of the sacrificial layer 130 is, in the part for not needing covering metal layer, institute to be isolated in subsequent stripping technology
Substrate 101 and metal layer while making to remove sacrificial layer 130, remove the metal layer on the sacrificial layer 130, realize metal layer
It is graphical.
It should be noted that the angle β that is formed of the side wall profile of the sacrificial layer 130 and 101 upper surface of substrate with
Remaining 110 side wall of barrier layer is complementary with the angle γ that 101 upper surface of substrate is formed, the residue that can be formed by control
110 side wall of barrier layer and the angle γ of the substrate 101 control 130 side wall profile of sacrificial layer and the substrate 101
Form the size of angle β: when the angle γ is not more than 105 °, the angle β would not be less than 75 °, it might even be possible to
By control angle γ less than 90 °, angle β is made to be greater than 90 °.Specifically, the size of the angle β is 90 ° in the present embodiment.
The sacrificial layer 130 is also used to subsequent etching substrate 101, protection lining during forming opening in substrate 101
Bottom other parts are not influenced by etching technics.
It should be noted that if the thickness of the sacrificial layer 130 is too small, it is difficult to form opening in etched substrate 101
Play the role of protecting substrate 101 in the process；If 130 thickness of sacrificial layer is excessive, be easy to cause material waste or
Person increases technology difficulty.In addition, during etched substrate 101 is formed and is open, the sacrificial layer 130 is needed in the present embodiment
Segment thickness is lost to realize the effect of protection, and after etched substrate 101 forms the opening, the sacrificial layer
130 thickness is needed at 3 μm or more.So the thickness of the sacrificial layer 130 needs to be greater than 3 μm.And sacrificial layer 130 is specific
Thickness and the etched substrate 101 form the concrete technology of opening and to form the depth being open related.In the present embodiment, root
According to formed opening the depth and formed opening technique, the sacrificial layer with a thickness of 8 μm.
With reference to Figure 10, section substrate 101 is removed, forms the second opening 200 in the substrate 101；
Specifically, second opening 200 is formed in the substrate 101 using anisotropic dry etching.It needs
Bright, during forming second opening 200, the sacrificial layer 130 plays protection 101 other parts of substrate
Effect.
By in this present embodiment, forming second opening 200 using the technique of the dry etching.Therefore the is being formed
During two openings 200, the sacrificial layer 130 needs to consume thickness to realize the effect for protecting the substrate 101.And in shape
After the step of second opening 200, the thickness of the sacrificial layer 130 is needed more than 3 μm.Therefore, in the present embodiment, institute
The thickness for stating sacrificial layer 130 is larger, needs more than 3 μm.But the present invention does not appoint the mode for forming second opening 200
What is limited, and is adopted when being formed by other methods the second opening 200, and the sacrificial layer 130 does not need consumption thickness to realize protection
When effect, the thickness of the sacrificial layer 130 can be smaller.
With reference to Figure 11, metal layer 140 is formed in the bottom of second opening 200 and 130 upper surface of the sacrificial layer.
The metal layer 140 is used for the adsorption gas molecule in subsequent technique processing procedure.Specifically, in the present embodiment, it is described
The material of metal layer 140 is titanium, bottom and the sacrificial layer by the way of electron beam growth in second opening 200
It is formed on 130.
It should be noted that using anisotropic electron beam growth pattern in second opening 200 in the present embodiment
The purpose that metal layer 140 is formed on bottom and the sacrificial layer 130 is, exposes the side wall of the sacrificial layer 130, makes described
The side wall of sacrificial layer 130 is not covered by the metal layer 140, thus it is subsequent can by remove sacrificial layer 130 stripping technology,
The metal layer 140 on the sacrificial layer 130 is removed, realizes the graphical of metal layer 140.
It should also be noted that, be only an example using the way that electron beam growth pattern forms the metal layer 140, this
In the other embodiments of invention, the metal layer 140, this hair can also be formed using other anisotropic coating growth techniques
It is bright not limit this.
After this, in conjunction with reference Figure 12, the sacrificial layer 130 is removed, exposes the substrate 101.
Specifically, removing the sacrificial layer 130 using wet etching, expose the substrate 101.
In the present embodiment, the sacrificial layer 130 is formed using photoresist, therefore the wet process for removing the sacrificial layer 130 is carved
Etching solution employed in erosion is sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) mixed solution.
It should be noted that being located on the sacrificial layer 130 while removing sacrificial layer 130 using wet etching
Film layer structure also remove, that is, the metal layer 140 being formed on the sacrificial layer 130 also while being removed.Due to described sacrificial
The angle β of domestic animal 130 side wall profile of layer and 101 upper surface of substrate larger (being not less than 90 °), therefore it is located at the substrate 101
The thickness of the sacrificial layer 130 at edge is thicker.Even if the sacrificial layer 130 is during the opening of formation second 200
Loss, also without the surface of the exposing substrate 101, therefore in the metal layer 140 of 130 upper surface of sacrificial layer formation and institute
The upper surface for stating substrate 101 does not contact.So while removing sacrificial layer 130, what 130 upper surface of sacrificial layer was formed
Metal layer is completely removed, and exposes the surface of the substrate 101.
In addition, the wet etching is the etching technics for the sacrificial layer 130, therefore it is located at second opening
Metal layer 140 in 200 is not readily susceptible to the influence of the wet etching, to realize the graphical place to metal layer 140
Reason.
Correspondingly, the present invention also provides a kind of semiconductor devices, the forming method institutes of semiconductor devices provided by the invention
It is formed.Semiconductor devices of the present invention is due to less film layer residual thus with good reliability.
To sum up, before forming sacrificial layer, barrier layer is formed over the substrate, and the first opening is formed in barrier layer,
Sacrificial layer material is filled in first opening, to form sacrificial layer.Due to the sacrificial layer formed with first opening in, because
The angle and first opening sidewalls of this described sacrificial layer outer profile and the upper surface of substrate and the upper surface of substrate
Angle is complementary, the angle by controlling first opening sidewalls and the upper surface of substrate control the sacrificial layer outer profile with
The angle of the upper surface of substrate avoids so that the sacrificial layer positioned at edge be made to have enough thickness due to forming second
The loss of sacrificial layer when opening and expose the substrate, avoid the metal layer being subsequently formed and directly connect with the substrate
Touching is conducive to stripping technology and completely removes metal layer on sacrificial layer and sacrificial layer, and the film layer for reducing sacrificial layer edge is residual
It is remaining.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of forming method of semiconductor devices characterized by comprising
Substrate is provided；
Barrier layer is formed over the substrate；
Partial barrier is removed, forms the first opening for exposing substrate in the barrier layer；
Sacrificial layer material is filled in first opening；
Remaining barrier layer is removed, sacrificial layer is formed；
The section substrate that sacrificial layer exposes is removed, forms the second opening in the substrate, using the sacrificial layer as mask, is used
Anisotropic dry etching forms second opening, and after the step of forming the described second opening, remaining sacrifice thickness
Degree is greater than 3 μm；
Metal layer is formed in second open bottom and the remaining sacrificial layer upper surface；
Remove the sacrificial layer.
2. forming method as described in claim 1, which is characterized in that after the step of substrate is provided, shape over the substrate
Before the step of barrier layer, the forming method further include:
Separation layer is formed over the substrate, and the separation layer covers the substrate；
Bonding metal layer is formed on the separation layer, the bonding metal layer part covers the separation layer；
In the step of forming the first opening in the barrier layer, first opening also exposes the bonding metal layer.
3. forming method as described in claim 1, which is characterized in that the barrier material is silica.
4. forming method as described in claim 1, which is characterized in that the step of formation barrier layer includes: over the substrate
Barrier layer is formed using the technique of chemical vapor deposition over the substrate.
5. forming method as described in claim 1, which is characterized in that the thickness on the barrier layer is greater than 3 μm.
6. forming method as described in claim 1, which is characterized in that removal partial barrier is formed in the barrier layer
The step of exposing the first opening of the substrate includes: to remove partial barrier using dry etching, inside the barrier layer
Form the first opening for exposing the substrate.
7. forming method as described in claim 1, which is characterized in that the material of the sacrificial layer is photoresist.
8. forming method as described in claim 1, which is characterized in that the step of filling sacrificial layer material in first opening
After rapid, before the step of removing remaining barrier layer, forming sacrificial layer, the forming method further include: remove on the barrier layer
Sacrificial layer.
9. forming method as claimed in claim 8, which is characterized in that the step of sacrificial layer on the removal barrier layer
It include: the sacrificial layer for using back carving technology to remove on the barrier layer.
10. forming method as described in claim 1, which is characterized in that the step of removing remaining barrier layer, forming sacrificial layer is wrapped
It includes: remaining barrier layer is removed using hydrofluoric acid wet etching.
11. forming method as described in claim 1, which is characterized in that in second open bottom and the sacrificial layer
The step of upper surface formation metal layer includes: to form the metal layer using the method for electron beam growth.
12. forming method as described in claim 1, which is characterized in that the metal layer material is titanium.
13. forming method as described in claim 1, which is characterized in that the step of removal sacrificial layer includes: use
Wet processing removes the sacrificial layer.
14. forming method as claimed in claim 13, which is characterized in that the sacrificial layer is photoresist；It is described sacrificial removing
In wet processing used by domestic animal layer, etching solution is the mixed solution of sulfuric acid and hydrogen peroxide.
15. a kind of forming method as described in any one of claim 1~14 is formed by semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510053617.4A CN105990129B (en) | 2015-02-02 | 2015-02-02 | Semiconductor devices and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510053617.4A CN105990129B (en) | 2015-02-02 | 2015-02-02 | Semiconductor devices and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105990129A CN105990129A (en) | 2016-10-05 |
| CN105990129B true CN105990129B (en) | 2019-07-02 |
Family
ID=57037297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510053617.4A Active CN105990129B (en) | 2015-02-02 | 2015-02-02 | Semiconductor devices and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105990129B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109573937B (en) * | 2017-09-29 | 2023-11-03 | 上海新微技术研发中心有限公司 | Semiconductor device and method of forming the same |
| CN108899272A (en) * | 2018-07-06 | 2018-11-27 | 德淮半导体有限公司 | Method for manufacturing semiconductor device |
| CN111430357B (en) * | 2020-04-10 | 2023-07-04 | 长江存储科技有限责任公司 | Forming method of three-dimensional memory |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1459840A (en) * | 2002-05-20 | 2003-12-03 | 台湾积体电路制造股份有限公司 | Manufacturing method of capacitor |
| CN1877453A (en) * | 2006-07-07 | 2006-12-13 | 中国科学院长春应用化学研究所 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
| CN101231948A (en) * | 2008-03-31 | 2008-07-30 | 天津工业大学 | Method for stripping electrode |
| US8349635B1 (en) * | 2008-05-20 | 2013-01-08 | Silicon Laboratories Inc. | Encapsulated MEMS device and method to form the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709241A (en) * | 2012-05-11 | 2012-10-03 | 北京京东方光电科技有限公司 | Thin film transistor array substrate and preparation method and display device |
-
2015
- 2015-02-02 CN CN201510053617.4A patent/CN105990129B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1459840A (en) * | 2002-05-20 | 2003-12-03 | 台湾积体电路制造股份有限公司 | Manufacturing method of capacitor |
| CN1877453A (en) * | 2006-07-07 | 2006-12-13 | 中国科学院长春应用化学研究所 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
| CN101231948A (en) * | 2008-03-31 | 2008-07-30 | 天津工业大学 | Method for stripping electrode |
| US8349635B1 (en) * | 2008-05-20 | 2013-01-08 | Silicon Laboratories Inc. | Encapsulated MEMS device and method to form the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105990129A (en) | 2016-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104053105B (en) | The forming method of semiconductor devices | |
| CN105374670B (en) | Semiconductor structure and its manufacturing method with coplanar umbilicate type grid layer | |
| CN106057671B (en) | The technique for manufacturing FinFET | |
| US7919006B2 (en) | Method of anti-stiction dimple formation under MEMS | |
| US8940586B2 (en) | Mechanism for MEMS bump side wall angle improvement | |
| CN105990129B (en) | Semiconductor devices and forming method thereof | |
| CN104347477B (en) | The forming method of semiconductor structure | |
| CN104253082B (en) | Semiconductor structure and forming method thereof | |
| CN109671619A (en) | A kind of method that wafer scale is hybrid bonded | |
| JP5345404B2 (en) | Integrated circuit manufacturing method | |
| CN105006447B (en) | The manufacture method of semiconductor devices | |
| CN104993804B (en) | A kind of processing method of MEMS resonant structure | |
| TWI321813B (en) | ||
| CN104465728B (en) | The grid structure and process of separate gate power device | |
| JP6582616B2 (en) | Manufacturing method of semiconductor chip | |
| CN110416151A (en) | Semiconductor devices and forming method thereof | |
| JP2000323563A (en) | Manufacture of semiconductor device | |
| US20180170748A1 (en) | Semiconductor devices with cavities and methods for fabricating semiconductor devices with cavities | |
| CN105712289B (en) | The forming method of semiconductor structure | |
| US9266724B2 (en) | Method for handling a thin substrate and for substrate capping | |
| CN105439081B (en) | The forming method of MEMS | |
| CN108069388B (en) | Method for forming inclined plane on surface of substrate | |
| CN109994420A (en) | A kind of manufacturing method of deep groove isolation structure | |
| CN104733509B (en) | A kind of selector and its manufacturing method | |
| KR101644266B1 (en) | Method of manufacturing cap substrate, method of manufacturing mems device using the same, and mems device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |