CN105984830A - Manufacturing method of integrated circuit fused MEMS sensor - Google Patents
Manufacturing method of integrated circuit fused MEMS sensor Download PDFInfo
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- CN105984830A CN105984830A CN201510082377.0A CN201510082377A CN105984830A CN 105984830 A CN105984830 A CN 105984830A CN 201510082377 A CN201510082377 A CN 201510082377A CN 105984830 A CN105984830 A CN 105984830A
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Abstract
The invention discloses an integrated circuit fused MEMS sensor and a manufacturing method of the integrated circuit fused MEMS sensor. The integrated circuit fused MEMS sensor comprises an integrated circuit and an MEMS sensor. The top of the integrated circuit is fused at the bottom of the MEMS sensor through a key. At least one key fusing area of the integrated circuit is provided with a window metal block for being electrically connected with the MEMS sensor, and a metal perpendicular channel is formed from the MEMS sensor to the window metal block. The top of the metal perpendicular channel is connected with a metal interconnection window of the MEMS sensor. The metal interconnection window of the MEMS sensor and the key fusing area of the integrated circuit are fused together, the area of the device can be narrowed, and production cost is reduced.
Description
Technical field
The present invention relates to a kind of gyro sensor and manufacture method thereof, especially on to relate to one integrated
The warm MEMS sensor of circuit and manufacture method thereof.
Background technology
Traditional integrated circuit and MEMS sensor, it is desirable to cloth on piece of silicon substrate wherein
Line, thus realize electrically and signal linkage function, another sheet silicon substrate as vacuum cover plate, this
Technique also can realize the function of capacitance-type triaxial gyroscope, but because needs double layer of metal connects up, and
And the position connected outside metal substrate back the most on a silicon substrate, integrated circuit merges the key of sensor
Distinguish with district and metal interconnection, therefore the light shield number of plies used is many, and one single chip area is big.
Metal interconnection window is merged by this processing technique with key and region, it is possible to reducer
The area of part, the production for integrated sensor reduces cost.
Summary of the invention
The technical problem that the invention solves the problems that is to provide a kind of by metal interconnection window and key
The sensor construction of MEMS warm with the integrated circuit that district merges.
In order to solve above-mentioned technical problem, the invention provides a kind of warm MEMS of integrated circuit
The structure of sensor, including integrated circuit and MEMS sensor, described integrated circuit top
Key and bottom MEMS sensor, at least one key of described integrated circuit and region are provided with
Be for electrically connecting to the window metal derby of MEMS sensor, from described MEMS sensor to
Described window metal derby position is formed with metallic vertical passage, described metallic vertical channel side surface
Being coated with insulating protective layer, described metallic vertical channel roof connects the gold of MEMS sensor
Belong to interconnection window.
Further, described integrated circuit includes infrabasal plate, described infrabasal plate is formed with integrated
The metal derby of circuit, window metal derby and silica glass layer, described metal derby is higher than described window gold
Belonging to block, described silica glass layer is contour with described metal derby, and described silica glass layer is covered in described window
Mouth metal derby.
Further, described MEMS sensor includes upper substrate, and described upper substrate top becomes
Shape has sealer, upper substrate bottom to have the groove at the bottom of a depthkeeping, described groove also to become
Shape have movable structure layer, described movable structure layer be positioned at described groove and infrabasal plate top it
Between, including silicon epitaxy layer, there is in the middle part of described silicon epitaxy layer comb structure, described groove surface pair
Described comb structure, utilizes the projection being positioned at groove both sides, by bonded seal silicon oxide layer,
Formed with described comb structure and seal cavity, described silicon epitaxy layer also has metal interconnection window
Mouthful, described movable structure layer goes back key and in the silica glass layer of described integrated circuit.
Another technical problem that the invention solves the problems that be to provide a kind of by metal interconnection window with
The manufacture of the sensor construction of the warm MEMS of integrated circuit that Jian He district merges
Method.
In order to solve above-mentioned technical problem, the invention provides the manufacture method of aforementioned structure, bag
Include: (A) shapes integrated circuit；(B) at least one metal derby of selected described integrated circuit,
Shape the window metal derby being for electrically connecting to MEMS sensor；(C) in integrated circuit
Upper shaping silica glass layer key and region, window metal derby described at least one place's key and region overlay；
(D) MEMS sensor is shaped；(E) key and described integrated circuit top pass in MEMS
Bottom sensor；(F) shape golden to described window metal derby position from described MEMS sensor
Belong to vertical channel.
Further, described step (A) including: (a) is selected and cleans under a wafer is used as
Substrate；B () grows metal level by sputtering mode on infrabasal plate；C () passes through photoetching and etching
Mode makes integrated circuit metal block in metal level.
Further, described step (B) including: by the gold that photoetching is selected with etching forming
Belonging to block is window metal derby, and described metal derby is higher than described window metal derby.
Further, described step (C) including: (a) passes through depositional mode in described integrated electricity
Silica glass layer is shaped on road；(b) by the way of cmp, silica glass layer is polished to
Metal derby is contour；C silica glass layer is made the figure in order to key sum by photoetching and etching mode by ()
Shape.
Further, described step (D) including: (a) selectes a silicon substrate upper substrate, cleans
And remove surface impurity；(b) bottom upper substrate on grow silicon oxide layer；(c) by photoetching and
Etching mode forms cavity in described upper substrate and silicon oxide layer grooving；D () is bottom silicon oxide layer
Shape movable structure layer.
Further, described step (E) including: by the silica glass layer key of described integrated circuit
With region key and in the movable structure layer of described MEMS sensor.
Further, described step (F) including: (a) passes through photoetching and erosion from described upper substrate
Quarter, mode shaped a cylindrical cavity through to window metal derby；B () passes through depositional mode in described circle
Post cavity inner surface covers insulating protective layer；C () splash-proofing sputtering metal in described cylindrical cavity forms gold
Belong to vertical channel.
Further, described metallic vertical channel roof passes through surface chemical mechanical polishing to upper
Substrate top is concordant, in described upper substrate top by depositional mode growing surface protective layer, in
Sealer exposes metallic vertical passage by the way of photoetching and etching, cleans and goes remove impurity
Grow layer of metal after matter, by the way of photoetching and etching, make metal interconnection window.
The present invention is by the key of the metal interconnection window of MEMS sensor and integrated circuit and region
Merge, it is possible to reduce the area of device, reduce production cost.
Accompanying drawing explanation
Fig. 1 is the structural principle schematic diagram of the present invention.
Fig. 2 is the manufacture method flow chart of the present invention.
Fig. 3 is manufacture method step (A) flow chart of the present invention.
Fig. 4 is manufacture method step (C) flow chart of the present invention.
Fig. 5 is manufacture method step (D) flow chart of the present invention.
Fig. 6 is manufacture method step (F) flow chart of the present invention.
In figure: 1, infrabasal plate；2, silica glass layer；3, metal derby；4, window
Mouth metal derby；5, metallic vertical passage；6, insulating protective layer；7, upper substrate；
8, silicon oxide layer；9, cavity；10, sealer；11, metal interconnection
Window；12, movable structure layer；13, comb structure；14, groove.
Detailed description of the invention
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that this area
Technical staff the present invention be may be better understood and can be practiced, but illustrated embodiment is not made
For limitation of the invention.
As it is shown in figure 1, the structure of the warm MEMS sensor of a kind of integrated circuit of the present invention,
Including integrated circuit and MEMS sensor；Integrated circuit includes infrabasal plate 1, infrabasal plate 1
On be formed with the metal derby 3 of integrated circuit, window metal derby 4 and silica glass layer 2, metal derby
3 are higher than window metal derby 4, and silica glass layer 2 is contour with metal derby 3, and silica glass layer 2 covers
In window metal derby 4；MEMS sensor includes upper substrate 7, and described upper substrate 7 top becomes
Shape has sealer 10, upper substrate bottom to have the groove 14 at the bottom of a depthkeeping, described recessed
Groove 14 is also formed with movable structure layer 12, and described movable structure layer 12 is positioned at described groove 14
And between the top of infrabasal plate 1, including silicon epitaxy layer, in the middle part of described silicon epitaxy layer, there is comb
Structure 13, described groove 14, in the face of described comb structure 13, utilizes and is positioned at groove 14 both sides
Projection, by bonded seal silicon oxide layer 8, formed with described comb structure and seal cavity 9,
Also there is on described silicon epitaxy layer metal interconnection window 3, described movable structure layer 12 go back key and
Silica glass layer 2 in described integrated circuit.
The integrated circuit top key of the present invention and bottom MEMS sensor, integrated circuit
At least one key and region are provided with the window metal derby 4 being for electrically connecting to MEMS sensor,
It is formed with metallic vertical passage 5, metal to window metal derby 4 position from MEMS sensor
Vertical channel 5 top connects the metal interconnection window 11 of MEMS sensor.Preferably, gold
Belong to vertical channel 5 side surface and be coated with insulating protective layer 6.
Metal derby 3 combination of the present invention constitutes the integrated circuit on integrated circuit, metal derby 3 with
Sputtering, photoetching and etching forming are in the infrabasal plate 1 of integrated circuit, at least one place's metal derby 3 warp
Photoetching and etching are with shaping window metal derby 4 again, and silica glass layer 2 is shaped by depositional mode
In infrabasal plate 1, metal derby 3 and window metal derby 4, silica glass layer 2 is ground by chemical machinery
Mill mode polishes to contour with metal derby 3 and be covered in window metal derby 4 with certain thickness.
The upper and lower base plate of the present invention can be selected for the maturing material of this area, it is preferable that infrabasal plate is
Wafer infrabasal plate, upper substrate is silicon substrate upper substrate.
The present invention can realize the integrated circuit electrical signal detection as three axles of Detection electrode, and
Electrically conducting of integrated circuit and upper substrate sensor is realized, it is achieved annular seal space in key and region
Internal portion electrical structure and the connection of the electrical outer connecting structure of containment portion.Integrated circuit infrabasal plate 1
A part as Detection electrode, metal derby 3 and movable structure layer 12 nonbonding and be connected, window
Mouth metal derby 4 is connected to form conducting by the sensor of metallic vertical passage 5 with top layer, integrated
Circuit is linked together with movable structure layer 12 by silica glass layer 2, and movable structure layer 12 is again
It is connected with silicon substrate upper substrate 7 by silicon oxide layer 8, has in the outside of metallic vertical passage 5
Insulating protective layer 6 is to ensure the connectedness of metal passage and metal derby, and this insulating protective layer ensures
Metal in metallic vertical passage does not contacts with silicon substrate upper substrate and movable structure layer.
Fig. 2 show the manufacture method flow chart of the present invention, comprises the following steps:
S10, shapes integrated circuit；
S20, at least one metal derby 3 of selected integrated circuit, shaping is for electrically connecting to
The window metal derby 4 of MEMS sensor；Preferably, the present invention passes through photoetching and is etched into
The metal derby that shape is selected is window metal derby, and metal derby 3 is higher than window metal derby 4.
S30, shapes silica glass layer 2 key and region, at least one Chu Jianhe district on integrated circuit
Territory covers window metal derby 4；
S40, shapes MEMS sensor；
S50, key and integrated circuit top are bottom MEMS sensor；In more detail, will
The silica glass layer 2 of integrated circuit is as strong and region key with in the movable knot of MEMS sensor
Structure layer 12.
S60, from MEMS sensor to window metal derby 4 position form metal vertical channel 5.
Step S10, the preferred implementation shaping integrated circuit sees Fig. 3, including:
S101, selectes and cleans a wafer and be used as infrabasal plate 1；
S102, grows metal level by sputtering mode on infrabasal plate 1；
S103, makes integrated circuit metal block 3 by photoetching and etching mode in metal level.
The present invention selects IC wafers sheet as infrabasal plate 1, is first carried out it, goes
Except the impurity on surface, then grow metal level on the integrated, so by the method for sputtering
By the way of photoetching and etching, metal being made figure afterwards, the most all of metal derby 3 is high
Degree is the same, then by the way of photoetching, blocks some metal derbies, exposes some metal derbies,
Being etched, now the height of metal derby occurs as soon as gradient difference again.At collection by the way of deposition
Become silicon growth layer glassy layer 2 on circuit, then carry out the cleaning on surface, remove for next step
Impurity, by the way of cmp, silica glass layer 2 is polished to high metal derby 3
Xiang Qi, then by the way of photoetching and etching, silica glass layer 2 is made figure key later
With.
Step S30, shapes silica glass layer key and region on integrated circuit, at least one place's key and
The preferred implementation of region overlay window metal derby 4 sees Fig. 4, including:
S301, shapes silica glass layer 2 by depositional mode on integrated circuit；
S302, by the way of cmp, silica glass layer 2 is polished to metal derby 3
Contour；
S303, makes the figure in order to key sum by photoetching and etching mode by silica glass layer 2.
Step S40, the preferred implementation shaping MEMS sensor sees Fig. 5, including:
S401, a selected silicon substrate upper substrate 7, cleans and removes surface impurity；
S402, bottom upper substrate 7 on grow silicon oxide layer；
S403, forms chamber by photoetching and etching mode in upper substrate 7 and silicon oxide layer 8 grooving
Body 9；
S404, in silicon oxide layer 8 bottom movable structure layer 12.
First the silicon substrate upper substrate 7 selected is carried out, and removes the impurity on surface, growth
One layer of silicon oxide layer 8, then form groove in its surface grooving by the way of photoetching and etching
14, collectively form cavity 9 with infrabasal plate 1, by the whole movable structure layer 12 not having figure,
Couple together in silicon oxide layer 8 position with silicon substrate upper substrate 7, clean movable structure layer 12
Surface, goes the removal of impurity, then forms comb structure 13 by the way of photoetching and etching, is formed
Required movable structure figure.
Step S60, vertical to window metal derby 4 position form metal from MEMS sensor
The preferred implementation of passage 5 sees Fig. 6, including:
S601, shapes a cylindrical cavity through to window from upper substrate 7 by photoetching and etching mode
Mouth metal derby 4；
S602, covers insulating protective layer 6 by depositional mode in cylindrical cavity inner surface；
S603, in cylindrical cavity, splash-proofing sputtering metal forms metallic vertical passage 5.
After metallic vertical passage 5 shapes, more preferably in embodiment, the present invention is in upper substrate 7
Depositional mode growing surface protective layer 10 is passed through at top, in sealer by photoetching and erosion
The mode carved exposes metallic vertical passage 5, grows layer of metal after cleaning and going the removal of impurity, logical
The mode crossing photoetching and etching makes metal interconnection window 11.
Key and time, first by integrated circuit and movable structure layer 12 key with get up, silica glass layer
2 is key and position, and metal derby 3 is formed with movable structure layer 12 and is connected, and passes through lithographic definition
Formed certain on the mode of figure and etching substrate 7 on a silicon substrate and movable structure layer 12
The cylindrical cavity of the degree of depth, this cavity is through to window metal derby 4, at this by the way of deposition
One layer of insulating protective layer 6 of cylindrical cavity internal deposition, then splash-proofing sputtering metal forms metallic vertical passage
5, by surface chemical mechanical polishing technique, metal is ground off, then grow by the way of deposition
Layer of surface protective layer 10, makes graphical window on this surface by the way of photoetching and etching,
Metallic vertical passage 5 is exposed, cleans surface and go the removal of impurity, in superficial growth layer of metal,
Metal interconnection window 11, now metal interconnection window 11 is made by the way of photoetching and etching
Electric connection is defined with window metal derby 4.
Present invention is generally applicable to the warm, as being applied to of various integrated circuit and sensor
Integrated circuit warm MEMS gyroscope sensor, realizes the skill of metal interconnection in Jian He district
Art, integrated circuit as sensing infrabasal plate, and and unconventional integrated circuit merge sensor key
Distinguish with district and metal interconnection.This integrated circuit fusion sensor manufacturing techniques, compatible single shaft,
Twin shaft, three axle gyroscope and accelerometers, wherein integrated circuit self top-level metallic conduct
A part for capacitance detecting pole plate, it is achieved trunnion axis detects, movable structure layer comb structure realizes
Z axis detection and driving.
Embodiment described above is only the preferred embodiment lifted by absolutely proving the present invention,
Protection scope of the present invention is not limited to this.Those skilled in the art are on the basis of the present invention
The equivalent made substitutes or conversion, all within protection scope of the present invention.The protection of the present invention
Scope is as the criterion with claims.
Claims (11)
1. a structure for the warm MEMS sensor of integrated circuit, including integrated circuit and
MEMS sensor, it is characterised in that described integrated circuit top key and in MEMS sense
Bottom device, at least one key of described integrated circuit and region are provided with and are for electrically connecting to MEMS
The window metal derby of sensor, from described MEMS sensor to described window metal derby position
Being formed with metallic vertical passage, described metallic vertical channel side surface is coated with insulating protective layer,
Described metallic vertical channel roof connects the metal interconnection window of MEMS sensor.
The structure of the warm MEMS sensor of integrated circuit the most according to claim 1,
It is characterized in that, described integrated circuit includes infrabasal plate, and described infrabasal plate is formed with integrated electricity
The metal derby on road, window metal derby and silica glass layer, described metal derby is higher than described window metal
Block, described silica glass layer is contour with described metal derby, and described silica glass layer is covered in described window
Metal derby.
The structure of the warm MEMS sensor of integrated circuit the most according to claim 2,
It is characterized in that, described MEMS sensor includes upper substrate, and described upper substrate is top formed
Sealer, upper substrate bottom is had to have the groove at the bottom of a depthkeeping, described groove also to shape
Have movable structure layer, described movable structure layer between described groove and the top of infrabasal plate,
Including silicon epitaxy layer, having comb structure in the middle part of described silicon epitaxy layer, described groove surface is to described
Comb structure, utilizes the projection being positioned at groove both sides, by bonded seal silicon oxide layer, with institute
State comb structure and form sealing cavity, described silicon epitaxy layer also has metal interconnection window, institute
State movable structure layer and go back key and in the silica glass layer of described integrated circuit.
4. a manufacture method for structure according to any one of claims 1 to 3, its feature exists
In, including:
(A) integrated circuit is shaped；
(B) at least one metal derby of selected described integrated circuit, shaping is for electrically connecting to
The window metal derby of MEMS sensor；
(C) on integrated circuit, silica glass layer key and region, at least one place's key and region are shaped
Cover described window metal derby；
(D) MEMS sensor is shaped；
(E) key and described integrated circuit top are bottom MEMS sensor；
(F) vertical to described window metal derby position form metal from described MEMS sensor
Passage.
Manufacture method the most according to claim 4, it is characterised in that described step (A)
Including:
A () is selected and clean a wafer as infrabasal plate；
B () grows metal level by sputtering mode on infrabasal plate；
C () makes integrated circuit metal block by photoetching and etching mode in metal level.
Manufacture method the most according to claim 5, it is characterised in that described step (B)
Including:
The metal derby selected with etching forming by photoetching is window metal derby, and described metal derby is high
In described window metal derby.
Manufacture method the most according to claim 6, it is characterised in that described step (C)
Including:
A () shapes silica glass layer by depositional mode on described integrated circuit；
B silica glass layer is polished to contour with metal derby by the way of cmp by ()；
C silica glass layer is made the figure in order to key sum by photoetching and etching mode by ().
Manufacture method the most according to claim 7, it is characterised in that described step (D)
Including:
A () selectes a silicon substrate upper substrate, clean and remove surface impurity；
(b) bottom upper substrate on grow silicon oxide layer；
C () forms cavity by photoetching and etching mode in described upper substrate and silicon oxide layer grooving；
D () is in silicon oxide layer bottom movable structure layer.
Manufacture method the most according to claim 8, it is characterised in that described step (E)
Including:
By the silica glass layer key of described integrated circuit and region key with in described MEMS sensor
Movable structure layer.
Manufacture method the most according to claim 9, it is characterised in that described step (F)
Including:
A () shapes a cylindrical cavity through to window from described upper substrate by photoetching and etching mode
Mouth metal derby；
B () covers insulating protective layer by depositional mode in described cylindrical cavity inner surface；
C () splash-proofing sputtering metal in described cylindrical cavity forms metallic vertical passage.
11. manufacture methods according to claim 10, it is characterised in that described metal
Vertical channel top is the most concordant with upper substrate top, on described by surface chemical mechanical polishing
Depositional mode growing surface protective layer is passed through at substrate top, in sealer by photoetching and
The mode of etching exposes metallic vertical passage, grows layer of metal after cleaning and going the removal of impurity, logical
The mode crossing photoetching and etching makes metal interconnection window.
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| CN201510082377.0A CN105984830A (en) | 2015-02-15 | 2015-02-15 | Manufacturing method of integrated circuit fused MEMS sensor |
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| CN201510082377.0A CN105984830A (en) | 2015-02-15 | 2015-02-15 | Manufacturing method of integrated circuit fused MEMS sensor |
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| CN110905787A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | Method for manufacturing micro-electromechanical pump |
| CN110902644A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | Method for manufacturing micro-electromechanical pump |
| CN110905786A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | Method for manufacturing micro-electromechanical pump |
| CN110905785A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | Method for manufacturing micro-electromechanical pump |
| CN110905789A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | MEMS pump |
| CN113167662A (en) * | 2018-09-17 | 2021-07-23 | 哈钦森技术股份有限公司 | Integrated sensor and circuit |
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Application publication date: 20161005 |