CN105977317B - 一种铜铟镓硒太阳电池吸收层的制备方法 - Google Patents

一种铜铟镓硒太阳电池吸收层的制备方法 Download PDF

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CN105977317B
CN105977317B CN201610550956.8A CN201610550956A CN105977317B CN 105977317 B CN105977317 B CN 105977317B CN 201610550956 A CN201610550956 A CN 201610550956A CN 105977317 B CN105977317 B CN 105977317B
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黄勇亮
孟凡英
沈文忠
吴敏
刘正新
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Abstract

本发明公开了一种铜铟镓硒太阳电池吸收层的制备方法，包括：步骤一，在基底上制备一层In‑Se化合物层；步骤二，在所述In‑Se化合物层上制备Cu‑In‑Ga层，得到预制层为In‑Se/Cu‑In‑Ga的双层预制层；步骤三，将所述双层预制层进行硒化热处理，得到铜铟镓硒吸收层。本发明制备的铜铟镓硒太阳电池吸收层可以促进铜铟镓硒吸收层背表面处的晶粒生长，同时调节吸收层的带隙结构，从而提高铜铟镓硒太阳电池的开路电压、填充因子和转化效率。

Description

一种铜铟镓硒太阳电池吸收层的制备方法
技术领域
本发明涉及薄膜太阳电池制造技术领域，尤其涉及一种铜铟镓硒(CIGS)太阳电池吸收层的制备方法。
背景技术
太阳电池作为清洁环保的可再生能源，正越来越受到人们的重视。铜铟镓硒薄膜太阳电池是一种新型的太阳电池技术，相比常见的基于硅材料的太阳电池，具有使用材料少、成本低、抗辐射性能好等优点，而且还有可能在柔性基底上制备柔性的太阳电池，可减轻电池质量，进一步拓展太阳电池的安装使用范围。另外，铜铟镓硒太阳电池具有较高的转换效率，实验室最高效率可以达到22.6％，已经接近甚至超过晶体硅电池效率。
在CIGS太阳电池的生产中，CIGS吸收层的质量是决定电池效率的关键。CIGS吸收层薄膜主要有两种制备工艺，一种是以单质的铜(Cu)、铟(In)、镓(Ga)和硒(Se)为原料，在真空腔室内以共蒸发的方式在基底上沉积；另一种是先以单质或合金靶材为原料采用磁控溅射方式在基底上沉积铜铟镓预制层，再将预制层硒化为CIGS吸收层薄膜。真空蒸发的工艺容易获得较高的转换效率，但在大面积的制备中很难达到很好的均匀性，而溅射后硒化的工艺，更有利于大规模生产。目前日本的Solar Frontier公司，采用溅射后硒化的工艺已经实现了CIGS太阳电池的量产。
在溅射后硒化的工艺制备的CIGS吸收层中有一个很关键的问题就是，在硒化时由于硒与铟的反应比硒与镓的反应快得多，In会快速的迁移到吸收层表面，这就造成硒化时会在吸收层表面快速形成镓含量低的CIGS相，而大量的镓元素聚集到基底与CIGS吸收层的界面处。这会导致吸收层的表面带隙低，背面带隙高，而且由于镓元素在背面聚集，导致背面的结晶质量差，从而降低了电池的转换效率。为了优化CIGS吸收层中镓元素的分布，以及吸收层的结晶质量，高温退火和硫化工艺都被广泛使用。但是硒化工艺制备的CIGS吸收层始终存在背表面附近镓含量高，晶粒尺寸小的问题。
发明内容
有鉴于现有技术的不足，本发明所要解决的技术问题是改善吸收层的结晶性和镓元素的分布，从而提高CIGS太阳电池的转换效率。
为实现上述目的，本发明提供了一种新的制备CIGS吸收层的方法，具体地，本发明提供的技术方案如下：
一种铜铟镓硒太阳电池吸收层的制备方法，包括以下步骤：
步骤一，在基底上制备一层In-Se化合物层；
步骤二，在In-Se化合物层上制备Cu-In-Ga层，得到预制层为In-Se/Cu-In-Ga的双层预制层；
步骤三，将双层预制层进行硒化热处理，得到铜铟镓硒吸收层。
优选地，步骤一中In-Se化合物层可以采用溅射、蒸发、电沉积或硒化热处理铟薄膜等方法制备。
优选地，步骤一中In-Se化合物层厚度为50-200nm，且满足原子比In/Se＝1.1-2.0。
优选地，步骤二中Cu-In-Ga层利用磁控溅射方法制备，可以采用Cu-Ga、Cu-In、Cu-In-Ga合金靶和In靶为靶材，溅射气氛为氩气，气压为0.3-1.0Pa。
优选地，双层预制层总厚度为300-1000nm，整体的原子组分比例满足Cu/(In+Ga)＝0.70-0.99。
优选地，步骤三中双层预制层进行的硒化热处理包括在有硒源存在的气氛下的硒化反应，和惰性气体保护下的退火处理。
进一步地，硒源包括硒粉、硒蒸气、硒化氢或有机硒化物。
优选地，基底上溅射有一层钼薄膜作为背电极。
优选地，基底包括钠钙玻璃、低Fe玻璃、太阳能浮法玻璃、不锈钢箔、Al箔、Mo箔、Cu箔、聚酰亚胺(PI)或聚对苯二甲酸乙二醇酯树脂(PET)。
本发明提供的铜铟镓硒太阳电池吸收层的制备方法提出了In-Se/Cu-In-Ga双层预制层的技术方案，In-Se在钼表面形成之后，In不易在后续的硒化热处理中迁移到表面，故可以增加CIGS吸收层中背表面处的In含量，In含量的提高可以有效改善吸收层背部的晶粒尺寸。同时，In-Se相在550℃以上会出现液相，可以进一步促进晶粒生长和镓元素的扩散，从而改善CIGS吸收层的结晶性和镓元素的分布。因此，采用这种双层的预制层，可以提高CIGS太阳电池的开路电压、填充因子和转化效率。
以下将结合附图对本发明的方法及产生的技术效果作进一步说明，以充分地了解本发明的目的、特征和效果。
附图说明
图1是铜铟镓硒太阳电池的结构示意图
图2是本发明实施例1的制备铜铟镓硒吸收层的工艺流程图
具体实施方式
图1所示为CIGS太阳电池的一般结构，包括依次排列的基底1、钼薄膜2、CIGS吸收层3、过渡层4、窗口层5、减反射膜6和栅状电极7。
基底可以为钠钙玻璃，低Fe玻璃，太阳能浮法玻璃，不锈钢箔，Al箔，Mo箔，Cu箔，聚酰亚胺(PI)，聚对苯二甲酸乙二醇酯树脂(PET)及其他适合的衬底。为了后续的CIGS电池工艺，在基底材料上溅射有一层钼薄膜作为背电极材料。
下面通过具体实施例详细地说明本发明提出的CIGS太阳电池吸收层的制备方法。
实施例1
工艺流程如图2所示：
步骤一，在钼薄膜2覆盖的钠钙玻璃基底1上通过磁控溅射一层铟硒(In-Se)化合物层9，靶材中In/Se原子比为1.3，溅射气氛为氩气，气压为0.3-1.0Pa，In-Se层的厚度约为100nm。
步骤二，在In-Se层上，以Cu-Ga合金靶(Ga含量at.25％)和In靶为靶材，采用磁控溅射的方式溅射铜铟镓(Cu-In-Ga)层10，溅射气氛为氩气，气压为0.3-1.0Pa，厚度为0.6μm，得到双层预制层薄膜，整体的原子组分比例Cu/(In+Ga)＝0.91。
步骤三，将制备的双层预制层的薄膜转入硒化炉内，采用H2Se作为硒源，400℃硒化40min，580℃氮气气氛中退火30min，然后自然冷却，得到CIGS吸收层3，厚度约为1.5μm。
实施例2
步骤一，在钼薄膜2覆盖的钠钙玻璃基底1上通过磁控溅射一层In层，溅射气氛为氩气，气压为0.3-1.0Pa，In层的厚度约为60nm。
步骤二，将溅射有In层的基底转入硒化炉内，采用H2Se作为硒源，190℃硒化15min，然后自然冷却至室温，得到In-Se化合物层9。硒化后In-Se层厚度约100nm，In/Se原子比为1.36。
步骤三，将制备有In-Se层的基底转入到溅射设备内，在In-Se层上，以Cu-Ga合金靶(Ga含量at.25％)和In靶为靶材，采用磁控溅射的方式溅射铜铟镓层10，溅射气氛为氩气，气压为0.3-1.0Pa，厚度约为0.6μm，得到双层预制层薄膜。双层预制层整体的原子组分比例为Cu/(In+Ga)＝0.85。
步骤四，将制备的双层预制层的薄膜转入硒化炉内，采用H2Se作为硒源，400℃硒化30min，580℃氮气气氛中退火30min，然后自然冷却，得到CIGS吸收层3，厚度约为1.4μm。
在其他实施例中，In-Se化合物可以采用溅射、蒸发、电沉积及硒化铟薄膜等各种方法制备，只需要保证In-Se层中原子比In/Se＝1.1-2.0，In-Se层的厚度为50-200nm，而且不引入其他有害杂质即可。
预制层需要保证总厚度为300-1000nm，整体的原子组分比例为Cu/(In+Ga)＝0.70-0.99。
硒化热处理可以使用硒粉、硒蒸气、硒化氢、有机硒化物(如二乙基硒(C4H10Se)、二甲基硒(C2H6Se)、二甲基硒醚(C2H6Se))等作为硒源。硒化工艺过程(如硒化温度、时间，升温、降温时间等)需要随硒源、预制层厚度和组分的变化作出调整。
以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术无需创造性劳动就可以根据本发明的构思做出诸多修改和变化。因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (10)

1.一种铜铟镓硒太阳电池吸收层的制备方法，其特征在于，包括以下步骤：
步骤一，在基底上制备一层In-Se化合物层,且使得所述In-Se化合物层满足原子比In/Se＝1.1-2.0；
步骤二，在所述In-Se化合物层上制备Cu-In-Ga层，得到预制层为In-Se/Cu-In-Ga的双层预制层；
步骤三，将所述双层预制层进行硒化热处理，所述硒化热处理包括硒化和退火过程，退火过程的温度高于550℃，得到铜铟镓硒吸收层。
2.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中步骤一中所述In-Se化合物层采用溅射、蒸发、电沉积或硒化热处理铟薄膜方法制备。
3.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中步骤一中所述In-Se化合物层厚度为50-200nm。
4.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中步骤二中所述Cu-In-Ga层利用磁控溅射方法制备，采用Cu-Ga、Cu-In、Cu-In-Ga合金靶和In靶为靶材，溅射气氛为氩气，气压为0.3-1.0Pa。
5.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中所述双层预制层总厚度为300-1000nm，整体的原子组分比例满足Cu/(In+Ga)＝0.70-0.99。
6.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中步骤三中所述双层预制层进行硒化热处理包括在有硒源存在的气氛下的硒化反应，和惰性气体保护下的退火处理。
7.如权利要求6所述的铜铟镓硒太阳电池吸收层的制备方法，其中所述硒源包括硒粉、硒蒸气、硒化氢或有机硒化物。
8.如权利要求6所述的铜铟镓硒太阳电池吸收层的制备方法，其中所述退火处理为在580℃氮气气氛中退火30min，然后自然冷却。
9.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中所述基底上溅射有一层钼薄膜作为背电极。
10.如权利要求1所述的铜铟镓硒太阳电池吸收层的制备方法，其中所述基底包括钠钙玻璃、低Fe玻璃、太阳能浮法玻璃、不锈钢箔、Al箔、Mo箔、Cu箔、聚酰亚胺或聚对苯二甲酸乙二醇酯树脂。
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