CN105960670B

CN105960670B - Image element circuit and extraction circuit parameter and the method that compensation in pixel is provided

Info

Publication number: CN105960670B
Application number: CN201480074742.7A
Authority: CN
Inventors: 戈尔拉玛瑞扎·恰吉
Original assignee: Ignis Innovation Inc
Current assignee: Ignis Innovation Inc
Priority date: 2013-12-05
Filing date: 2014-12-05
Publication date: 2017-11-10
Anticipated expiration: 2034-12-05
Also published as: CN107967897A; DE112014005546T5; WO2015083136A1; CN105960670A; DE112014005546T8; CN107967897B

Abstract

System reads desired circuit parameter from following image element circuit, and the image element circuit including light-emitting device, providing the drive device to the light-emitting device, programming input and storage device for storing programming signal for will program driving current.One embodiment of the extraction system ends drive device and predetermined voltage is supplied into the light-emitting device from external source, make light-emitting device electric discharge until the light-emitting device ends, and then read while the light-emitting device is ended the voltage on the light-emitting device.The voltage on each light-emitting device in multiple image element circuits can be read via identical outer lines in the different time.The compensation scheme based on electric charge in pixel is also discussed, it can extract embodiment with external parameter and be used together.

Description

Image element circuit and extraction circuit parameter and the method that compensation in pixel is provided

Technical field

The present invention relates generally to active matrix organic light-emitting device (AMOLED) display, and it is this kind of more particularly to extracting The parameter of image element circuit and light-emitting device in display.

Background technology

Include relative to conventional LCD device, the advantages of active matrix organic light-emitting device (" AMOLED ") display compared with Low power consumption, manufacture flexible and faster refresh rate.Compared with conventional LCD device, do not have in displayer There is backlight, and thus each pixel is made up of the OLED of the different colours independently to light.OLED is based on by by program voltage control The electric current of the driving transistor supply of system lights.The size of the power and caused light in the pixel that are consumed in each pixel has Relation.

The performance impact of output quality transistor driven and OLED in itself in pixel based on OLED, wherein driving is brilliant Body pipe is generally made up of the material for including but is not limited to non-crystalline silicon, polysilicon or metal oxide.Specifically, driving transistor Threshold voltage and mobility tend to pixel ageing and changed.In order to keep picture quality, it is necessary to programmed by adjusting Voltage compensates come the change to these parameters.For that purpose it is necessary to extract this kind of parameter from drive circuit.It is simple for extracting The greater room increased on the display base plate needed for drive circuit of the component of this kind of parameter in drive circuit, and Therefore light is reduced from the aperture that OLED launches or region.

When being biased in saturation state, the I-V characteristic of thin film drive transistor is depended on as manufacturing crystal The mobility and threshold voltage of the function of the material of pipe.Therefore, the different film transistor devices on display pannel are applied It may be showed non-homogeneous due to aging and mobility and the processing differences of threshold voltage (process variation) Sexual behaviour.Therefore, there may be different drain currents for constant voltage, each device.Extreme example is probably one Individual device may be with Low threshold and low mobility compared with the second device with high threshold voltage and high mobility.

Therefore, using considerably less electronic building brick with keep it is expected aperture in the case of, to driving TFT and OLED it is non- Uniformity parameters (that is, threshold voltage V_thAnd mobility [mu]) extraction become challenging.It is desirable that, using as few as possible Component extract this kind of parameter in the drive circuit for OLED pixel so that pixel aperture maximizes.It is also expected to It is that compensation (in-pixel compensation) in parameter extraction and pixel is combined together so that life performance optimizes. In pixel compensation refer to not externally from image element circuit extract any information in the case of to the aging inside image element circuit or The compensation that Time Dependent parameter is carried out.

The content of the invention

Embodiment disclosed by the invention reads from image element circuit or extracts desired circuit parameter, and the image element circuit includes Light-emitting device, for programmable driving current to be provided to the drive device, programming input and use of the light-emitting device In the storage device of storage programming signal.The extracting method includes：End the drive device, will be predetermined from external source Voltage supply makes the light-emitting device discharge until light-emitting device cut-off, and then in the hair to the light-emitting device Electro-optical device reads the voltage on the light-emitting device when being ended.In one embodiment, in the different time via identical Outer lines read the voltage of each light-emitting device in multiple image element circuits.It can influence in the following way to institute It is expected the reading of parameter：The image element circuit is connected to charge-pump amplifier；Make the charge-pump amplifier and the pixel Circuit is isolated to provide voltage output that is proportional to charge level or being integrated to the electric current from the image element circuit；Read Take the voltage output of the charge-pump amplifier；And determined at least from the voltage output of the charge-pump amplifier One image element circuit parameter.

Another embodiment extracts circuit parameter from image element circuit in the following way：The drive device is turned on so that The voltage of the light-emitting device rises above the level of its conducting voltage；End the drive device so that the hair Voltage on electro-optical device is discharged until the light-emitting device ends by the light-emitting device；And then in described device quilt The voltage on the light-emitting device is read during cut-off.

Another embodiment extracts circuit parameter from image element circuit in the following way：The image element circuit is programmed； Turn on the drive device；And read by (i) when predetermined voltage is applied to the drive device flow through it is described The electric current of drive device or (ii) read the voltage in the drive device when making predetermined electric current flow through the drive device To extract the parameter of the drive device.

Another embodiment extracts circuit parameter from image element circuit in the following way：The drive device is turned on, and Change the voltage between the grid of the driving transistor and source electrode or drain electrode so that the driving transistor is between the very first time When period operates in linear zone and is operated during the second time interval in saturation region, the driving transistor is measured Electric current and voltage；And the electric current and voltage measured according to the driving transistor operated in described two areas Relation extract the parameter of the light-emitting device.

Many other embodiments have shown and described herein.

In view of the detailed description for the various embodiments and/or each side that refer to the attached drawing is carried out, of the invention is above-mentioned and another Outer each side and each embodiment will be apparent to those skilled in the art.Next the brief theory of accompanying drawing is provided It is bright.

Brief description of the drawings

After following detailed description and refer to the attached drawing is read, foregoing and other advantages of the invention will become it is aobvious and It is clear to.

Fig. 1 is the block diagram of the displayer with compensation control；

Fig. 2 is the circuit diagram for the data extraction circuit of the double transistor pixels in the displayer in Fig. 1；

Fig. 3 A are the data extraction electricity for the threshold voltage for being used to the extract n-type driving transistor and mobility delivered in Fig. 2 The signal timing diagram of the signal on road；

Fig. 3 B are the data for being used to extract OLED characteristic voltage delivered in the case of n-type driving transistor in Fig. 2 Extract the signal timing diagram of the signal of circuit；

Fig. 3 C are the numbers for being used to extract the threshold voltage of n-type driving transistor in a manner of directly reading delivered in Fig. 2 According to the signal timing diagram of the signal of extraction circuit；

Fig. 4 A are the data extraction electricity for the threshold voltage for being used to the extract p-type driving transistor and mobility delivered in Fig. 2 The signal timing diagram of the signal on road；

Fig. 4 B are the data for being used to extract OLED characteristic voltage delivered in the case of p-type driving transistor in Fig. 2 Extract the signal timing diagram of the signal of circuit；

Fig. 4 C are the numbers for being used to extract the threshold voltage of p-type driving transistor in a manner of directly reading delivered in Fig. 2 According to the signal timing diagram of the signal of extraction circuit；

Fig. 4 D be deliver in Fig. 2 be used for OLED conducting voltages are directly read by using n-type or p-type driving transistor Data extraction circuit signal signal timing diagram；

Fig. 5 is the data of the extracting parameter of three transistor driver circuits of the pixel for the displayer in Fig. 1 Extract the circuit diagram of circuit；

Fig. 6 A are to deliver in Fig. 5 to be used to extract the threshold voltage of driving transistor and the data extraction circuit of mobility The signal timing diagram of signal；

Fig. 6 B are the signal sequences for being used to extract the signal of the data extraction circuit of OLED characteristic voltage delivered in Fig. 5 Figure；

Fig. 6 C are that the data for the threshold voltage for extracting driving transistor in a manner of directly reading delivered in Fig. 5 carry The signal timing diagram of the signal of sense circuit；

The data extraction circuit for being used to extract OLED characteristic voltage in a manner of directly reading that Fig. 6 D are delivered in Fig. 5 The signal timing diagram of signal；

Fig. 7 is the extraction week for reading the driving transistor of the image element circuit in displayer and OLED characteristic The flow chart of phase；

Fig. 8 is the flow chart of different parameter extraction cycle and final application；And

Fig. 9 is the block diagram and flow chart of the component of data extraction system.

Figure 10 is the threshold voltage and mobility to the driving transistor in the revision for extracting the circuit in Fig. 5 Data extraction circuit signal signal timing diagram；

Figure 11 deliver to for extract the circuit in Fig. 5 revision in OLED characteristic voltage data extraction circuit Signal signal timing diagram；

Figure 12 is the data extraction for reading pixel charge from the drive circuit of the pixel in Fig. 1 displayer The circuit diagram of circuit；

Figure 13 is delivered to for reading Figure 12 of pixel status data extraction circuit by externally initializing node Signal signal timing diagram；

Figure 14 is for reading the flow chart of the pixel status of Figure 12 circuit by externally initializing node；

Figure 15 is delivered to for reading Figure 12 of pixel status data extraction circuit by internally initializing node Signal signal timing diagram；

Figure 16 is for reading the flow chart of the pixel status in Figure 12 circuit by internally initializing node；

Figure 17 is that the use for reading pixel charge from two different pixels in the displayer in Fig. 1 is public The circuit diagram of a pair of circuits monitoring the circuit as Figure 12 of line；

Figure 18 is the signal of the data extraction circuit sent when sharing monitoring line to Figure 17 for reading pixel charge Signal timing diagram；And

Figure 19 is the pixel status for reading a pair of circuits as Figure 17 circuit using common monitoring line Flow chart.

Figure 20 A are the schematic circuit diagrams for improving image element circuit.

Figure 20 B be a diagram that the timing diagram of the operation of the image element circuit of Figure 20 A compensation of the use based on electric charge.

Figure 21 be a diagram that the operation for being used to obtain the readout of the parameter of driving transistor of Figure 20 A image element circuit Timing diagram.

Figure 22 be a diagram that the sequential for being used to obtain the operation of the readout of OLED parameter of Figure 20 A image element circuit Figure.

Figure 23 be a diagram that the improvement operation of the readout for being used to obtain OLED parameter of Figure 20 A image element circuit Timing diagram.

Figure 24 is for the circuit from the image element circuit extraction parasitic capacitance using external compensation.

Figure 25 illustrates the image element circuit available for current measurement.

Figure 26 is using the exemplary pixel circuits and its correlation timing figure that realization is compensated in the pixel based on electric charge.

Figure 27 shows image element circuits identical from the image element circuit shown in Figure 26 but using different temporal orders.

Figure 28 is that EM signals are divided into two signals to be used in the another of the internal node of the image element circuit of compensation reset The example of image element circuit.

Figure 29 is can to read OLED current or the image element circuit of voltage and another example of timing diagram via monitoring line.

Figure 30 is change to driving transistor or aging compensates based on electric charge compensation pixel circuit and at that time Another example of sequence figure.

Figure 31 is the image element circuit and correlation timing figure for having the discharge cycle for making storage discharge at least in part Another example.

Figure 32 is similar with Figure 31, in addition to driving transistor T1 is programmed to the effect as switch.

Figure 33 is to read OLED via monitoring line (it can also serve as the reference line and/or data wire for programming information) The image element circuit and its correlation timing figure of voltage or electric current.

Figure 34 be a diagram that another image element circuit and the correlation timing figure for the another method for realizing EM functions.

Figure 35 is conventional image element circuit.

Figure 36 is the image element circuit that one or more switches can be shared between the row and/or row of pel array.

Figure 37 shows image element circuit similar but using different programming operations from Figure 36 image element circuit.

Figure 38 illustrates another image element circuit for sharing one or more switches.

Figure 39 A and 39B illustrate image element circuit and correlation timing figure with discharge cycle.

Figure 40 A and 40B illustrate another image element circuit and correlation timing figure with the reset cycle.

Figure 41 A and 41B are illustrated with another image element circuit and the correlation timing figure resetted with readout interval.

Figure 42 A and 42B are illustrated with another image element circuit and the correlation timing figure resetted with readout interval.

Figure 43 A and 43B illustrate with programming cycle after readout interval another image element circuit and correlation timing figure.

Figure 44 A and 44B are illustrated with after the programming cycle being programmed using cut-off current to image element circuit Another image element circuit and correlation timing figure of readout interval.

Figure 45 A and 45B illustrate another image element circuit and correlation timing figure with discharge cycle.

Figure 46 A and 46B illustrate another image element circuit and correlation timing figure with the reset cycle.

Figure 47 A and 47B are illustrated with another image element circuit and the correlation timing figure resetted with readout interval.

Figure 48 A and 48B are illustrated with another image element circuit and the correlation timing figure resetted with readout interval.

Figure 49 A and 49B illustrate another image element circuit and correlation timing with the readout interval after programming cycle Figure.

Although the present invention easily carries out various modifications and alternative form, it is illustrated by way of example in the accompanying drawings Specific embodiment and will it describe in detail in this manual.It is to be appreciated, however, that the present invention be not intended to be limited to it is disclosed Special shape.On the contrary, present invention covering is fallen into as defined by the appended claims in the spirit and scope of the present invention All modifications, equivalent and alternative solution.

Embodiment

Fig. 1 is the electronic display system 100 for having active matrix area or pel array 102, in the pel array 102 In, n × m pixelated array 104 is arranged with the construction of row and column.In order to facilitate example, two rows and two row are illustrate only. The outside of the active matrix area of pel array 102 is outer peripheral areas 106, wherein being disposed with for driving and controlling pel array 102 peripheral circuit.Peripheral circuit includes address or gate driver circuit 108, data or source driver circuit 110, control Device 112 processed and optional supply voltage (for example, Vdd) driver 114.The control gate driver 108 of controller 112, source drive Device 110 and supply voltage driver 114.Gate drivers 108 are under the control of controller 112 to address wire or selection line SEL [i] and SEL [i+1] etc. are operated, pixel that the address wire or selection line correspond in pel array 102 or Every a line in image element circuit 104.In following pixels shares construction, grid or address driver circuits 108 can also can Selectively to global selection line GSEL [j] and selectively right/GSEL [j] is operated, global selection line GSEL [j] or/ GSEL [j] operates to multiple rows (every two row of such as pixel 104) in the pixel 104 in pel array 102.Source electrode drives Dynamic device circuit 110 operates under the control of controller 112 to voltage data line Vdata [k] and Vdata [k+1] etc., and one Each row that bar voltage data line corresponds in the pixel 104 in pel array 102.Voltage data line gives each pixel 104 Transport the voltage-programming information for the brightness for representing each light-emitting device in pixel 104.Such as electric capacity in each pixel 104 The memory elements such as device store the voltage-programming information until luminous or drive cycle turns on light-emitting device.Optional supply voltage Driver 114 controls supply voltage (EL_Vdd) line under the control of controller 112, and a power voltage line corresponds to pixel Each row or column in pixel 104 in array 102.

Display system 100 also include from DOL Data Output Line VD [k] and VD [k+1] etc. read output data electric current supply with Reading circuit 120, each row that a data output line corresponds in the pixel 104 in pel array 102.

Represented as it is known, each pixel or image element circuit 104 in display system 100 need to use in pixel 104 The information (form of curtage or electric charge) of the brightness of light-emitting device is programmed.Frame defines programs week including (i) Phase or stage and (ii) driving or the period in light period or stage, use in programming cycle or during the stage expression brightness Program voltage each pixel in display system 100 is programmed, and in driving or light period or during the stage Each light-emitting device in each pixel is switched on so as to be sent out with the brightness to match with the program voltage being stored in memory element Light.Therefore, frame is one in many still images for the complete moving image that composition is shown in display system 100.Extremely It is few the two schemes for being used for programming and drive pixel to be present：Line by line or frame by frame.In programming line by line, compiled in next line pixel Before journey and driving, one-row pixels are programmed and then driven.In programming frame by frame, the institute first in display system 100 There is capable pixel to be all programmed, and drive the pixel of all rows immediately.Any scheme can be in every frame beginning or knot Of short duration vertical blanking time is used at beam, pixel is both unprogrammed in the vertical blanking time or is not driven.

Component positioned at the outside of pel array 102 can be disposed in the same thing for being disposed with pel array 102 thereon Manage in the outer peripheral areas 106 around the pel array 102 on substrate.These components include gate drivers 108, source electrode driver 110th, optional supply voltage driver 114 and electric current supply and reading circuit 120.Alternately, one in outer peripheral areas 106 A little components can be disposed in from the identical substrate of pel array 102 and other components are disposed on different substrates, or All component in person's outer peripheral areas can be disposed on the substrate different from the substrate for being disposed with pel array 102 thereon. Gate drivers 108, source electrode driver 110 and supply voltage driver 114 form display driving circuit together.Some constructions In display driving circuit may include gate drivers 108 and source electrode driver 110 but not include supply voltage control 114.

When being biased in saturation state, metal-oxide semiconductor (MOS) (MOS) transistor (is concerned with thin in the case of this Film transistor) single order I-V characteristic be modeled as：

Here, I_DIt is drain current and V_GSThe voltage difference being consequently exerted between the gate terminal of transistor and source terminal. The film transistor device in display system 100 is applied due to aging and mobility (μ) and threshold voltage (V_th) processing it is poor It is different and show heterogeneity behavior.Therefore, the constant voltage difference V for being applied between grid and source electrode_GS, picture element matrix Each transistor on 102 may have different drain currents based on uncertain mobility and threshold voltage：

I_D(i,j)=f (μ_i,j,V_{th i,j})

Here, i and j be pixel in n × m array of the pixel of Fig. 1 grade of pel array 102 coordinate (row and Row).

Fig. 2 shows the data extraction system 200 including pair transistor (2T) drive circuit 202 and reading circuit 204. In the display system with 2T image element circuits 104, supply voltage control 114 is selectable.Reading circuit 204 is that electric current supplies Data should be collected with the part of reading circuit 120 and from a row pixel 104 as shown in Figure 1.Reading circuit 204 includes electric charge Pump circuit 206 and box switch circuits 208.Voltage source 210 is provided supply voltage to drive circuit by box switch circuits 208 202.Charge pump circuit 206 and box switch circuits 208 be used in array 102 top side or bottom side (such as in Fig. 1 In voltage driving 114 and electric current supply and reading circuit 120).This be by with it is straight on the identical substrate of pel array 102 Connect manufacture or realized by microchip being bonded on substrate or being used as the flex of hybrid solution.

Drive circuit 202 includes driving transistor 220, organic luminescent device 222, drain electrode storage 224, source electrode Storage 226 and selection transistor 228.Supply lines 212 provides to the column driver circuit of the grade of drive circuit 202 one Supply voltage and supervised path (being directed to reading circuit 204).Selection line input 230 is connected to the grid of selection transistor 228 Pole.Programming data input 232 is connected to the grid of driving transistor 220 by selection transistor 228.Driving transistor 220 Drain electrode be connected to power voltage line 212 and the source electrode of driving transistor 220 is connected to OLED 222.Selection transistor 228 is controlled Connection of the programming input 232 processed to the grid of driving transistor 220.Source electrode storage 226 is connected to driving transistor Between 220 grid and source electrode.Drain electrode storage 224 is connected between grid and the drain electrode of driving transistor 220.OLED 222 have the parasitic capacitance for being modeled as capacitor 240.Power voltage line 212, which equally has, is modeled as posting for capacitor 242 Raw electric capacity.Driving transistor 220 in this example is the thin film transistor (TFT) made of non-crystalline silicon.It is of course also possible to using such as The other materials such as polysilicon or metal oxide.Node 244 is that the source electrode of driving transistor 220 is connected with OLED 222 anode Circuit node together.In this example, driving transistor 220 is n-type transistor.As explained belowly, p can be used Type driving transistor replaces n-type driving transistor 220 to realize system 200.

Reading circuit 204 includes charge pump circuit 206 and box switch circuits 208.Charge pump circuit 206 is included with positive and negative The amplifier 250 of input.The negative input end of amplifier 250 is connected to the (C of capacitor 252_int), capacitor 252C_intTo putting It is in parallel with switch 254 in the feedback loop of the output end 256 of big device 250.254 (S4) of switch were used in the pre-charging stage phase Between to capacitor 252C_intDischarged.The positive input terminal of amplifier 250 is connected to common-mode voltage input 258 (VCM).Amplification The output 256 of device 250 represents driving transistor 220 as will be described below and OLED 222 various extracting parameters.

Box switch circuits 208 include being used to control the multiple switch to and from the electric current of pixel driver circuit 202 260 (S1), 262 (S2) and 264 (S3).260 (S1) of switch are used to the discharge path of ground connection during reseting stage.Open Close 262 (S2) and power supply connection is provided during the normal operating of pixel 104 and during the integration phase of reading.Switch 264 (S3) it is used to charge pump circuit 206 with power line voltage 212 (VD) is isolated.

As shown in Fig. 2 for each pixel 104 double transistor pixels drive circuit 202 it is overall read design come From on the fact that：The electric charge being stored in the parasitic capacitance represented by the capacitor 240 for crossing over the both ends of OLED 222, which has, to be driven The threshold voltage and the useful information of mobility and OLED 222 conducting voltage of dynamic transistor 220.The extraction of this kind of parameter Available for various applications.For example, such parameter can be used to modify to the programming data of pixel 104, with compensation pixel Change and holding picture quality.Such parameter can also be used to preaging pel array 102.These parameters can also be used to comment Estimate the process yields (process yield) of manufacture pel array 102.These or other parameters can pass through tool as described herein Have monitoring line etc. be connected to the line of image element circuit for extracting or reading such parameter any image element circuit and by Extraction.

It is assumed that (the C of capacitor 240_OLED) be initially discharged, then (the C of capacitor 240_OLED) need some times to make to charge to The voltage level that driving transistor 220 is ended.This voltage level is the function of the threshold voltage of driving transistor 220.Apply extremely (the V of programming data input 232_Data) voltage must be sufficiently low so that OLED 222 burning voltage (setteld voltage)(V_OLED) it is less than the on state threshold voltages of of OLED 222 itself.In the case, V_Data–V_OLEDIt is driving transistor 220 threshold voltage (V_th) linear function.In order to extract the migration of the grade film transistor device of driving transistor 220 Rate, to consider this kind of device as the momentary stabilization of threshold voltage and the function of mobility (transient settling). It is assumed that the threshold voltage deviation between the grade TFT devices of driving transistor 220 is compensated, then start after integrating with constant The voltage for being spaced the node 244 of sampling is only the function of the mobility for the grade TFT devices of driving transistor 220 paid close attention to.

Fig. 3 A to 3C are to be used to extract it is assumed that in the case that driving transistor 220 is n-type transistor applying in Fig. 2 Threshold voltage and mobility and OLED 222 conducting voltage etc. the ginseng of driving transistor 220 in drive circuit 200 The signal timing diagram of the control signal of several components.This kind of control signal can be applied the source drive into Fig. 1 by controller 112 Device 110, gate drivers 108 and electric current supply and reading circuit 120.Fig. 3 A are to show that application drives crystal to extraction is used for The timing diagram of the signal of the threshold voltage of pipe 220 and the extraction circuit 200 of mobility.The selection that Fig. 3 A include being used in Fig. 2 is defeated Enter the signal 302 at end 230, the signal 304 to switch 260For switching 262 signal 306For opening Close 264 signal 308For switching 254 signal 310For the programming data input 232 in Fig. 2 Program voltage signal 312, node 244 in Fig. 2 voltage 314 and output end 256 for the amplifier 250 in Fig. 2 Output voltage signal 316.

Fig. 3 A show the four-stage of readout, i.e. reseting stage 320, integration phase 322, pre-charging stage 324 With the reading stage 326.The process is by the way that high selection signal 302 is activated to selection input 230 to start.Selection signal 302 Height will be retained as in whole readout as shown in Figure 3A.

During reseting stage 320, in order to provide the discharge path of ground connection, by the input signal 304 of switch 260It is arranged to high.In this stage, to the signal 306 of switch 262 To the signal 308 of switch 264 To the signal 310 of switch 254It is retained as low.Sufficiently high voltage level (V_{RST_TFT}) to be applied to programming data defeated Enter (the V of end 232_Data) maximized with flowing through the electric current of driving transistor 220.Therefore, the voltage quilt at the node 244 in Fig. 2 Ground is discharged to, thinks that next cycle prepares.

During integration phase 322, to the signal 306 of switch 262Height is remained, this is provided from voltage source 210 Pass through the charge path of switch 262.In this stage, to the signal 304 of switch 260To the signal 308 of switch 264With the signal 310 to switch 254It is retained as low.(the V of program voltage input 232_Data) it is set to voltage Level (V_{INT_TFT}) so that once (the C of capacitor 240_OLED) be fully charged, the voltage at node 244 is less than OLED's 222 Conducting voltage.Such case will make any minimum interference from OLED 222 during the reading of driving transistor 220. Before the time of integration closes to an end, in order that (the C of capacitor 240_OLED) on electric charge isolate with the remainder of circuit, will deliver to (the V of program voltage input 232_Data) signal 312 be reduced to V_OFF。

When time of integration long enough, (the C of capacitor 240 is stored in_OLED) on electric charge by be driving transistor 220 threshold value The function of voltage.For the time of integration of shortening, the voltage at node 244 will undergo incomplete stabilization and be stored in capacitor 240(C_OLED) on electric charge by be driving transistor 220 threshold voltage and mobility both function.Therefore, it is feasible It is that two single readings are obtained to extract the two parameters by using short integration phase and long integration phase.

During pre-charging stage 324, by the signal 304 of switch 260With the signal 306 to switch 262It is set as low.Once to the input signal 310 of switch 254It is set high to, amplifier 250 is just set to Unity feedback constructs.In order to guard amplifier 250 output stage from the short circuit current from supply voltage 210 influence, when to The signal 306 of switch 262When being set to low, to the signal 308 of switch 264Uprise.When switch 264 is closed When closing, the parasitic capacitance 242 of power line is precharged to common-mode voltage VCM.Common-mode voltage VCM must be less than OLED 222 The voltage level of conducting voltage.Before pre-charging stage closes to an end, the signal 310 of switch 254 will be delivered toIt is set as It is low, so that charge-pump amplifier 250 is prepared for read cycle.

During the stage of reading 326, the signal 304 of switch 260 will be delivered toDeliver to the signal 306 of switch 262With the signal 310 for delivering to switch 254It is set as low.By the signal 308 for switch 264Remain Height, to provide from drive circuit 202 to the charge transfer path of charge-pump amplifier 250.By sufficiently high voltage 312 (V_{RD_TFT}) apply to (the V of program voltage input 232_Data), so that the channel resistance of driving transistor 220 minimizes.If product Divide cycle long enough, then accumulation is in (the C of capacitor 252_int) on electric charge be not the time of integration function.Therefore, in this case The output voltage of charge-pump amplifier 250 be equal to：

For the time of integration of shortening, accumulate in (the C of capacitor 252_int) on electric charge be given by the following formula：

Therefore, output voltage 256 of the charge-pump amplifier 250 at the end of read cycle is equal to：

Therefore, can be by reading the centre in stage 326 and the read-out amplifier 250 at the end of read cycle 326 Output voltage 256 extract the threshold voltage of driving transistor 220 and mobility.

Fig. 3 B are the timing diagrams of the reading process of the threshold value conducting voltage parameter for the OLED 222 in Fig. 2.OLED 222 reading process equally includes four-stage：Reseting stage 340, integration phase 342, pre-charging stage 344 and reading stage 346.As the reading process of the driving transistor 220 in Fig. 3 A, OLED reading process is by using high selection signal 302 activation select inputs 230 and started.Deliver to the signal 304 of switch 260Deliver to the signal 306 of switch 262Deliver to the signal 308 of switch 264With the signal 310 for delivering to switch 254Sequential and Fig. 3 A in The reading process of driving transistor 220 is identical.For programming signal 332, the letter for node 244 programmed to input 232 Numbers 334 and different from the signal in Fig. 3 A for the output signal 336 of the output of amplifier 250.

During reseting stage 340, by the sufficiently high (V of voltage level 332_{RST_OLED}) apply to programming data input 232(V_Data), to flow through the maximization of the electric current of driving transistor 220.Therefore, the voltage at the node 244 in Fig. 2 is by opening Close 260 and be discharged to ground, think that next cycle prepares.

During integration phase 342, the signal 306 of switch 262 is delivered toHeight is remained, this is provided from voltage source 210 pass through the charge path of switch 262.(the V of program voltage input 232_Data) it is set to (the V of voltage level 332_{INT_OLED}), Once so that (the C of capacitor 240_OLED) be fully charged, the voltage at node 244 is greater than OLED 222 conducting voltage. In the case, at the end of integration phase 342, driving transistor 220 drives constant current to pass through OLED 222 always.

During pre-charging stage 344, cut driving transistor 220 by the signal 332 for delivering to programming input 232 Only.(the C of capacitor 240_OLED) be allowed to discharge, it reaches OLED 222 conducting voltage at the end of pre-charging stage 344.

During the stage of reading 346, by the sufficiently high (V of voltage 332_{RD_OLED}) apply to program voltage input 232 (V_Data), so that the channel resistance of driving transistor 220 minimizes.If pre-charging stage long enough, capacitor 252 (C_int) both ends burning voltage by be not precharge time function.Therefore, the charge-pump amplifier at the end of the reading stage 250 output voltage 256 is given by the following formula：

By to switch 264 signal 308Height is remained, to provide from drive circuit 202 to charge-pump amplifier 250 charge transfer path.Therefore, output voltage signal 336 can be used for the conducting voltage for determining OLED 220.

Fig. 3 C are the timing diagrams directly read for the driving transistor 220 using the extraction circuit 200 in Fig. 2.Directly Connecing reading process has reseting stage 350, pre-charging stage 352 and integration/reading stage 354.The readout passes through activation Selection input 230 in Fig. 2 and start.In whole readout as shown in Figure 3 C, the choosing of selection input 230 is delivered to Select signal 302 and be retained as height.For switching 260 signal 364With the signal 366 for switch 262Herein It is invalid (inactive) in readout.

During reseting stage 350, in order to provide the discharge path of virtual ground, by the signal 368 for switch 264With the signal 370 for switch 254It is set as height.By the sufficiently high (V of voltage 372_{RST_TFT}) apply to programming (the V of input 232_Data), to flow through the maximization of the electric current of driving transistor 220.Therefore, node 244 is discharged to common mode electricity Press 374 (VCM_RST), think that next cycle prepares.

During pre-charging stage 352, by by (the V of blanking voltage 372_OFF) apply to the programming input 232 in Fig. 2 End driving transistor 220.In order to enter line precharge to line capacitance, by being total to for the positive input terminal for delivering to amplifier 250 Mode voltage input 258 is improved to VCM_RD.At the end of pre-charging stage 352, make the signal 370 for delivering to switch 254Cut Only, so that charge-pump amplifier 250 is to prepare in next cycle.

When integration/reading stage 354 starts, by (the V of program voltage input 232_Data) improve to making driving transistor The V of 220 conductings_{INT_TFT}372.(the C of capacitor 240_OLED) start stored charge, until V_DataSubtract voltage at node 244 etc. In the threshold voltage of driving transistor 220.At the same time, proportional electric charge is accumulated in the (C of capacitor 252_INT) in.Therefore, At the end of read cycle 354, the output voltage 376 of the output end 256 of amplifier 250 is the threshold value electricity provided by equation below The function of pressure：

As represented by above-mentioned formula, in the case where directly reading, output voltage has positive polarity.Therefore, crystal is driven The threshold voltage of pipe 220 can be determined by the output voltage of amplifier 250.

As described above, the driving transistor 220 in Fig. 2 can be p-type transistor.Fig. 4 A to 4C are in driving transistor 220 apply when being p-type transistor into Fig. 2 be used for extract voltage threshold and migration from driving transistor 220 and OLED 222 The signal timing diagram of the signal of the component of rate.In the example that driving transistor 220 is p-type transistor, driving transistor 220 Source electrode is connected to supply lines 212 (VD) and the drain electrode of driving transistor 220 is connected to OLED 222.Fig. 4 A are to show driving Transistor 220 applies when being p-type transistor to for extracting threshold voltage and the extraction circuit of mobility from driving transistor 220 The timing diagram of 200 signal.Fig. 4 A show for the selection input 230 in Fig. 2, switch 260, switch 262, switch 264, Switch 254, programming data input 232, the voltage signal 402 to 416 of the voltage at node 244 and output voltage 256.With The following three stage carries out data extraction：Reseting stage 420, integration/pre-charging stage 422 and reading stage 424.

As shown in Figure 4 A, selection signal 402 is that low level is effective and the quilt in the whole reading stage 420,422 and 424 Remain low.In whole readout, the signal 404 of switch 260 is delivered toWith the signal 406 for delivering to switch 262It is retained as low (invalid).In reseting stage, common mode voltage level VCM is resetted in order to which node 244 is charged to_rst, The signal 408 at 264 will be switchedWith the signal 410 at switch 254It is set as height.On charge pump input 258 Common-mode voltage input 258 (VCM_rst) should be sufficiently low, to keep OLED222 to end.By programming data input 232V_Data It is set as the sufficiently low (V of value 412_{RST_TFT}), to provide the maximum charging current by driving transistor 220.

During integration/pre-charging stage 422, by the common mode voltage reduction on common-mode voltage input 258 to VCM_intAnd By (the V of programming input 232_Data) increase to (V of level 412_{INT_TFT}) so that driving transistor 220 will be led in the opposite direction It is logical.If the distribution time long enough in this stage, the voltage at node 244 will be decreased until the grid of driving transistor 220 Reach the threshold voltage of driving transistor 220 to source voltage.Before this end cycle, in order that charge-pump amplifier 250 Prepared for the reading stage 424, deliver to the signal 410 of switch 254Step-down.

By by (the V of programming input 232_Data) signal 412 at place is decreased to V_{RD_TFT}So that driving transistor 220 turns on To start the reading stage 424.Now, (the C of capacitor 240 will be stored in_OLED) on electric charge transmit to (the C of capacitor 252_INT). At the end of the reading stage 424, in order that charge-pump amplifier 250 is isolated with drive circuit 202, the signal of switch 264 will be delivered to 408It is set as low.Now, the output voltage signal 416V from amplifier out 256_outIt is to be provided by equation below Driving transistor 220 threshold voltage function：

Fig. 4 B are it is assumed that the threshold value for the OLED 222 being used in the case that driving transistor 220 is p-type transistor in Fig. 2 The timing diagram of extraction in the pixel of voltage.The extraction process and the extraction circuit for n-type driving transistor delivered in Fig. 3 A The sequential of 200 signal is very similar.Fig. 4 B show for the selection input 230 in Fig. 2, switch 260, switch 262, open Close the voltage signal of 264, switch 254, programming data input 232, the voltage at node 244 and amplifier out 256 432 to 446.Extraction process includes reseting stage 450, integration phase 452, pre-charging stage 454 and read the stage 456.This reads It is to apply in each reading stage to drive circuit 202 extremely to go out the main distinction of the cycle compared with the readout interval in Fig. 4 A (the V of programming data input 232_Data) signal 442 voltage level.It is brilliant for the p-type thin film available for driving transistor 220 Body pipe, the selection signal 432 for delivering to selection input 230 is that low level is effective.In whole readout as shown in Figure 4 B In, select input 230 to be retained as low.

Readout in reseting stage 450 by making (the C of capacitor 240 first_OLED) reset and start.Switch will be delivered to 260 signal 434It is set as height, to provide the discharge path of ground connection.In order that driving transistor 220 turns on, will deliver to (the V of programming input 232_Data) signal 442 be reduced to V_{RST_OLED}。

In integration phase 452, the signal 434 of switch 260 will be delivered toWith the signal 436 to switch 262 Cut-off state and conducting state are respectively set as, to provide the charge path to OLED 222.(the C of capacitor 240_OLED) be allowed to Charged, the voltage 444 at node 244 exceeds OLED 222 threshold voltage so that OLED 222 is turned on.Integrating Before stage 452 terminates, (the V of programming input 232 is delivered to_Data) voltage signal 442 improve to V_OFFSo that driving transistor 220 cut-offs.

During pre-charging stage 454, (the C of capacitor 240_OLED) on stored charge be discharged into OLED 222, directly Voltage 444 at node 244 reaches OLED 222 threshold voltage.Moreover, in pre-charging stage 454, switch is being delivered to 264 signal 438With the signal 440 for delivering to switch 254While being set to conducting, switch 260 is delivered to Signal 434With the signal 436 for delivering to switch 262Cut-off.This is that amplifier 250 is provided supply lines 212 (VD) it is precharged to the common-mode voltage input 258 (VCM) being arranged at the positive input terminal of amplifier 250 and provides condition. At the end of pre-charging stage, make the signal 440 for delivering to switch 254Cut-off, so that charge-pump amplifier 250 is reading rank Section 456 is prepared.

The reading stage 456 is by delivering to (the V of programming input 232_Data) voltage 442 be reduced to V_{RD_OLED}When make drive Dynamic transistor 220 is turned on and started.Now, it is stored in (the C of capacitor 240_OLED) on electric charge be transferred to capacitor 252 (C_INT), the output voltage 446 at the output end 256 of amplifier 250 is configured to OLED 220 threshold voltage by the capacitor Function.

Fig. 4 C are for the driving crystal in the extraction system 200 in Fig. 2 when driving transistor 220 is p-type transistor The signal timing diagram of the direct extraction of the threshold voltage of pipe 220.Fig. 4 C are shown for the selection input 230 in Fig. 2, switch 260th, switch 262, switch 264, switch 254, programming data input 232, voltage and output voltage 256 at node 244 Voltage signal 462 to 476.The extraction process includes pre-charging stage 480 and integration phase 482.However, in figure 4 c when The special last reading stage 484 is illustrated in sequence figure, if to charge-pump amplifier 250 at the end of integration phase 482 Output is sampled, then can eliminate the reading stage 484.

The extraction process passes through simultaneously to the drain electrode storage 224 in Fig. 2, source electrode storage 226, electric capacity (the C of device 240_OLED) and capacitor 242 enter line precharge and start.Selection line input is delivered to therefore, activating as shown in Figure 4 C 230 signal 462, the signal 468 for delivering to switch 264 and the signal 470 for delivering to switch 254.In whole readout, deliver to The signal 464 of switch 260With the signal 466 for delivering to switch 262It is retained as low.Common-mode voltage input 258 (VCM) voltage level determines voltage on supply lines 212 and thus determines the voltage at node 244.Common-mode voltage (VCM) should When sufficiently low so that OLED 222 is not turned on.Deliver to (the V of programming input 232_Data) voltage 472 be set to it is sufficiently low Level (V_{RST_TFT}) so that transistor 220 turns on.

When integration phase 482 starts, in order that the convection current of charge-pump amplifier 250 is overdrived, the electric current of transistor 220 enters Row integration, the signal 470 of switch 254 will be delivered toCut-off.Threshold voltage and its grid as driving transistor 220 The function of pole-source voltage, the output voltage 256 of charge-pump amplifier 250 is by with constant speed rising.In integration phase Before 482 terminate, make the signal 468 for delivering to switch 264Cut-off, so that charge-pump amplifier 250 and drive circuit 202 isolation.Therefore, the output voltage 256 of amplifier 250 is given by the following formula：

Here, I_TFTIt is the conduct mobility and (V of driving transistor 220_CM-V_Data-|V_th|) function drain current.T_int It is the length of the time of integration.In optionally the stage 484 is read, the signal 468 of switch 264 is delivered toEnded, so that Charge-pump amplifier 250 is isolated with drive circuit 202.Any time in the stage 484 can read to brilliant as driving The output voltage 256 of the mobility of body pipe 220 and the function of threshold voltage is sampled.

Fig. 4 D are the timing diagrams directly read for the OLED 222 in Fig. 2.When electric using sufficiently high gate-to-source When pressure makes the conducting of driving transistor 220, driving transistor 220 is used as the simulation of the anode terminal for accessing OLED 222 Switch.In the case, the voltage at node 244 is substantially equal to the voltage on supply lines 212 (VD).Therefore, driving is passed through The driving current of transistor 220 by be only OLED 222 conducting voltage and supply lines 212 on the function of voltage that sets.Should Driving current can be provided by charge-pump amplifier 250.When being integrated in certain time period, the output electricity of integrating circuit 206 Pressure 256 is exactly how many measurement weathered to OLED 222.

Fig. 4 D are to show the extraction circuit 200 applied to being used to extract conducting voltage from OLED 222 via directly reading Signal timing diagram.Fig. 4 D show the three phases of readout, i.e. pre-charging stage 486, integration phase 487 and reading Stage 488.The signal 489n or 489p of the selection input 230 that Fig. 4 D include being used in Fig. 2, the signal 490 for delivering to switch 260For switching 262 signal 491For switching 264 signal 492For switching 254 letter Numbers 493For the node in the program voltage signal 494n or 494p, Fig. 2 of the programming data input 232 in Fig. 2 The output voltage signal 496 of 244 voltage 495 and output end 256 for the amplifier 250 in Fig. 2.

The process is started by activating the selection signal corresponding with the desired row of the pixel in array 102.Such as Fig. 4 D Shown, selection signal 489n is effective for n-type selection transistor high level, and effective for p-type selection transistor low level. In the case of n-type driving transistor, high selection signal 489n is applied to selection input 230.For driving transistor 220, in the case of p-type driving transistor, low signal 489p is applied to selection input 230.

During precharge cycle 486 and integration period 487, selection signal 489n or 489p will be kept effective.Herein In reading method,Input 490 HesIt is invalid to input 491.During precharge cycle, in order to provide signal path, it will open OFF signal 492With switching signal 493It is set as height, so that power line (C_P) parasitic capacitance 242 and node 244 at Common-mode voltage (the VCM that the non-inverting terminals that voltage is precharged to amplifier 250 are provided_OLED).By sufficiently high driving electricity Press signal 494n (V_{ON_nTFT}) or 494p (V_{ON_pTFT}) apply to (the V of data input pin 232_Data), so that driving transistor 220 is made Operated for analog switch.Therefore, supply voltage 212VD and node 244 are precharged to common-mode voltage (VCM_OLED), think next Cycle prepares.When integration phase 487 starts, in order that electric charge pump module 206 integrates to OLED 222 electric current, make Switch input 493Cut-off.As (that is, the VCM of voltage 495 set in OLED 222 conducting voltage and node 244_OLED) Function, the output voltage 496 of electric charge pump module 206 will rise with constant speed.Before the end of integration phase 487, make Switching signal 492Cut-off, so that electric charge pump module 206 is isolated with image element circuit 202.After at the moment, output voltage is permanent Determine until electric charge pump module 206 is reset for another reading.When being integrated in certain time period, the output of integrator Voltage is given by the following formula：

It is the measurement to OLED degree of agings.T in this formula_intIt is switching signal 493Trailing edge to opening OFF signal 492Trailing edge between time interval.

It can be carried using the similar extraction process of the bicrystal cast drive circuit such as drive circuit in Fig. 2 Take such as threshold voltage of three transistor-type drive circuits of the part as shown in Figure 5 as data extraction system 500 With heterogeneity and the ageing parameter such as mobility.Data extraction system 500 includes drive circuit 502 and reading circuit 504.As Electric current is supplied and a part for reading circuit 120, reading circuit 504 from a row pixel 104 as shown in Figure 1 collect data and Including charge pump circuit 506 and box switch circuits 508.Voltage source 510 provides supply voltage (VDD) to drive circuit 502.Electricity Lotus pump circuit 506 and box switch circuits 508 are used in top side or bottom side (the voltage drive such as in Fig. 1 of array 102 Move in 114 and electric current supply and reading circuit 120).This be by with the direct manufacture on the identical substrate of pel array 102 Or by the way that microchip is bonded on substrate or realized by being used as the flex of hybrid solution.

Drive circuit 502 includes driving transistor 520, organic luminescent device 522, drain electrode storage 524, source electrode and deposited Storing up electricity container 526 and selection transistor 528.Selection line input 530 is connected to the grid of selection transistor 528.Programming input End 532 is connected to the grid of driving transistor 520 by selection transistor 528.It is brilliant that selection line input 530 is also connected to output The grid of body pipe 534.Output transistor 534 is connected to the source electrode and voltage monitoring output line 536 of driving transistor 520.Driving The drain electrode of transistor 520 is connected to power voltage source 510 and the source electrode of driving transistor 520 is connected to OLED 522.Source electrode is deposited Storing up electricity container 526 is connected between the grid and source electrode of driving transistor 520.It is brilliant that drain electrode storage 524 is connected to driving Between the grid of body pipe 520 and drain electrode.OLED 522 has the parasitic capacitance for being modeled as capacitor 540.Monitor output voltage Line 536 equally has the parasitic capacitance for being modeled as capacitor 542.Driving transistor 520 in this example is by non-crystalline silicon system Into thin film transistor (TFT).Voltage node 544 is the point between the source terminal of driving transistor 520 and OLED 522.Originally showing In example, driving transistor 520 is n-type transistor.Can be to realize instead of driving transistor 520 using p-type driving transistor System 500.

Reading circuit 504 includes charge pump circuit 506 and box switch circuits 508.Charge pump circuit 506 is included in negative-feedback There is (the C of capacitor 552 in ring_int) amplifier 550.Between precharge phase, using 554 (S4) of switch come to capacitor 552 (C_int) discharged.Amplifier 550 has and capacitor 552 and switchs 554 negative input ends that are connected and defeated with common-mode voltage Enter the positive input terminal of end 558 (VCM) connection.Amplifier 550, which has, represents driving transistor 520 as will be described below and OLED The output end 556 of 522 various extracting parameters.

Box switch circuits 508 include being used for multiple switch 560,562 and for guiding electric current to and from drive circuit 502 564.Switch 560 is used to the discharge path of ground connection during reseting stage.Normal operating of the switch 562 in pixel 104 Period and the offer power supply connection during the integration phase of readout.Switch 564 is used to make charge pump circuit 506 and electricity Source line voltage source 510 isolates.

In three transistor driver circuits 502, it is read out normal through monitoring line 536.Can also with Fig. 3 A to 3C In the process similar mode of clock signal be read out by the voltage power line of power voltage source 510.For switching 560 Input signalThe input signal of switch 562The input signal of switch 564Switch 554 it is defeated Enter signalSelect input 530 and the (V of program voltage input 532_Data) accurate sequential be used to control read The performance of circuit 504.During each stage of readout, some voltage levels are applied to programming data input 532 (V_Data) and common-mode voltage input 558 (VCM).

Three transistor-type drive circuits 502 can by program voltage input 532 and monitoring output end 536 discriminatively It is programmed.Therefore, reseting stage and pre-charging stage can be merged together to form reset/pre-charging stage, the reset/pre- It is integration phase and reading stage after charging stage.

Fig. 6 A be the driving transistor 520 being related in Fig. 5 threshold voltage and mobility extraction signal timing diagram. The timing diagram includes selection input 530, switch 560, switch 562, switch 564, switch 554, the program voltage being used in Fig. 5 Input 532, driving transistor 520 grid at voltage, the voltage letter of the voltage at node 544 and output voltage 556 Numbers 602 to 618.Readout in Fig. 6 A has pre-charging stage 620, integration phase 622 and read the stage 624.The reading Process by simultaneously drain-capacitor 524, source capacitor 526 and capacitor parasitics 540 and 542 are entered line precharge and Start.Therefore, selection line voltage 602 is activated as shown in Figure 6A, delivers to the signal 608 of switch 564Switched with delivering to 554 signal 610In whole readout interval, the signal 604 of switch 560 is delivered to562 are switched with delivering to Signal 606Remain low.

The voltage level of common mode input 558 (VCM) determines the voltage on output monitoring line 536 and thus determination node Voltage at 544.Voltage to common mode input 558 (VCM) should be sufficiently low, so that OLED 522 is not turned on.It is being pre-charged In stage 620, (the V of program voltage input 532 is delivered to_Data) 612 sufficiently high (V of voltage signal_{RST_TFT}) so that driving transistor 520 conductings, and it is also sufficiently low so that OLED 522 is always maintained at ending.

When integration phase 622 starts, make the voltage 602 for delivering to selection input 530 invalid, so that electric charge can be deposited Store up (the C of capacitor 540_OLED) on.Voltage at node 544 will be begun to ramp up, and the grid voltage of driving transistor 520 will With the capacitance of source capacitor 526 relative to source capacitor 526 and the ratio [C of the capacitance of drain-capacitor 524_S1/ (C_S1+C_S2)] follow the voltage at node 544 to rise.Once the grid voltage of driving transistor 520 and the voltage at node 544 Difference be equal to driving transistor 520 threshold voltage, charging just will complete.Before the end of integration phase 622, make to deliver to switch 554 signal 610Cut-off, so that charge-pump amplifier 550 is to prepare in the reading stage 624.

On reading the stage 624, the signal 602 of selection input 530 is delivered in activation again.In programming input 532 (the V of voltage signal 612_{RD_TFT}) sufficiently low so that driving transistor 520 keeps cut-off.Now, it is stored in (the C of capacitor 540_OLED) On electric charge be transferred to the (C of capacitor 552_INT) and produce the output voltage proportional to the threshold voltage of driving transistor 520 618：

Before the end of stage 624 is read, the signal 608 of switch 564 is delivered toCut-off is so that charge pump circuit 506 Isolate with drive circuit 502.

Fig. 6 B are the timing diagrams for the input signal of the extraction of the conducting voltage of the OLED 522 in Fig. 5.Fig. 6 B include For the selection input 530 in Fig. 5, switch 560, switch 562, switch 564, switch 554, program voltage input 532, drive Move the voltage at the grid of transistor 520, the voltage at node 544, common-mode voltage input 558 and output voltage 556 Voltage signal 632 to 650.Readout in Fig. 6 B has pre-charging stage 652, integration phase 654 and read the stage 656. Similar to the reading for the driving transistor 220 in Fig. 6 A, readout with pre-charging stage 652 simultaneously to drain electrode The mode that capacitor 524, source capacitor 526 and capacitor parasitics 540 and 542 enter line precharge starts.Therefore, such as Fig. 6 B It is shown to activate the signal 638 delivered to the signal 632 of selection input 530, deliver to switch 564554 are switched with delivering to Signal 640In whole readout interval, signal 634With signal 636Remain low.Deliver to common mode electricity Press (the VCM of input voltage 648 of input 558_Pre) it should be high enough that OLED 522 is switched on.Deliver to programming input 532 (V_Data) (V of voltage 642_{Pre_OLED}) sufficiently low to keep driving transistor 520 to end.

When integration phase 654 starts, it is invalid to make to deliver to the voltage 632 of selection input 530, with enable electric charge by Store (the C of capacitor 540_OLED) on.Voltage at node 544 will be begun to decline, and the grid voltage of driving transistor 520 By with the capacitance of source capacitor 526 relative to source capacitor 526 and the ratio [C of the capacitance of drain-capacitor 524_S1/ (C_S1+C_S2)] follow the voltage at node 544 to decline.Once the voltage at node 544 reaches OLED 522 conducting voltage (V_OLED), electric discharge is just completed.Before the end of integration phase 654, make the signal 640 for delivering to switch 554Cut-off, so that Charge pump circuit 506 is to prepare in the reading stage 656.

On reading the stage 656, the signal 632 of selection input 530 is delivered in activation again.In programming input 532 (the V of voltage signal 642_{RD_OLED}) should be sufficiently low so that driving transistor 520 keeps cut-off.Then, it is stored in capacitor 540 (C_OLED) on electric charge be transferred to the (C of capacitor 552_INT), led so as to be produced at electric discharge output end 556 with OLED 522 The output voltage 650 for the ratio that is pressed into that is powered：

Reading the front signal 638 of the end of stage 656Cut-off, so that charge pump circuit 506 and drive circuit 502 Isolation.

Line for electric current is provided as illustrated, monitoring output transistor 534 is driving transistor 520 or OLED 522 Property integration directapath.Reading can be performed in precharge cycle and integration period.However, Fig. 6 C are shown for extra The last reading stage input signal timing diagram, if the output to charge pump circuit 506 at the end of integration phase is adopted Sample, then it can eliminate the reading stage.Fig. 6 C include selection input 530, switch 560, switch 562, the switch being used in Fig. 5 564th, the voltage signal 662 of switch 554, program voltage input 532, the voltage at node 544 and output voltage 556 to 674.Therefore, the readout in Fig. 6 C has pre-charging stage 676, integration phase 678 and optional reading stage 680.

The direct integral readout of n-type driving transistor 520 in Fig. 5 as shown in Figure 6 C passes through simultaneously to drain electrode Capacitor 524, source capacitor 526 and capacitor parasitics 540 and 542 enter line precharge and started.Therefore, as shown in Figure 6 C Ground activation delivers to the signal 660 of selection input 530, delivers to the signal 666 of switch 564With the letter for delivering to switch 554 Numbers 668In whole readout interval, the signal 662 of switch 560 is delivered toWith the signal 664 for delivering to switch 562Remain low.The voltage level of common-mode voltage input 558 (VCM) determine the voltage on monitoring output line 536 and because And determine the voltage at node 544.Voltage signal (the VCM of common-mode voltage input 558_TFT) it is sufficiently low so that OLED 522 not Conducting.Deliver to (the V of programming input 532_Data) (V of signal 670_{ON_TFT}) it is high enough that driving transistor 520 turns on.

When integration phase 678 starts, in order that charge-pump amplifier 550 can be to the electricity from driving transistor 520 Stream is integrated, and makes the signal 668 for delivering to switch 554Cut-off.Threshold voltage, mobility as driving transistor 520 With the function of grid-source voltage, the output voltage 674 of charge-pump amplifier 550 is declined with constant speed.In integration phase Before end, make the signal 666 for delivering to switch 564Cut-off, so that charge pump circuit 506 is isolated with drive circuit 502. Therefore, output voltage is given by the following formula：

Here, I_TFTIt is the conduct mobility and (V of driving transistor 520_Data-V_CM-V_th) function drain current.T_int It is the length of the time of integration.Any time in the stage 680 can read to the mobility and threshold as driving transistor 520 The output voltage 674 of the function of threshold voltage is sampled.

Fig. 6 D show the input signal directly read of conducting (threshold value) voltage for the OLED 522 in Fig. 5 when Sequence figure.Fig. 6 D include selection input 530, switch 560, switch 562, switch 564, switch 554, the programming electricity being used in Fig. 5 The voltage signal 682 to 696 of voltage and output voltage 556 at pressure input 532, node 544.Readout in Fig. 6 D With pre-charging stage 697, integration phase 698 and optional reading stage 699.

Readout in Fig. 6 D passes through simultaneously to drain-capacitor 524, source capacitor 526 and capacitor parasitics 540 and 542 enter line precharge and start.Deliver to the signal 682 of selection input 530 therefore, being activated to as shown in Figure 6 D, send To the signal 688 of switch 564With the signal 690 for delivering to switch 554In whole readout interval, signal 684With signal 686Remain low.The voltage level of common-mode voltage input 558 (VCM) determines monitoring output line Voltage on 536 and thus determine voltage at node 544.Voltage signal (the VCM of common-mode voltage input 558_OLED) enough Height is so that OLED 522 is turned on.(the V of programming input 532_Data) (V of signal 692_{OFF_TFT}) sufficiently low so that driving transistor 520 Keep cut-off.

When the stage of integration phase 698 starts, in order that charge-pump amplifier 550 can be to the electric current from OLED 522 Integrated, make the signal 690 for delivering to switch 554Cut-off.Threshold voltage and the both ends of OLED 522 as OLED 522 Voltage function, the output voltage 696 of charge-pump amplifier 550 will rise with constant speed.

Before the end of integration phase 698, make the signal 688 for delivering to switch 564Cut-off, so that charge pump circuit 506 isolate with drive circuit 502.Therefore, output voltage is given by the following formula：

Here, I_OLEDIt is as (V_CM-V_th) function OLED current, and T_intIt is the length of the time of integration.It can read Any time in during the stage 699 is taken to sample the output voltage of the function of the threshold voltage as OLED 522.

The technical staff of computer, software and network field will be understood that, can by using according to as noted herein and Illustrated teaching and one or more general-purpose computing systems, microprocessor, digital signal processor, the microcontroller programmed Device, application specific integrated circuit (ASIC), PLD (PLD), field programmable logic device (FPLD) and scene can compile Journey gate array (FPGA) etc. conveniently realizes the controller 112 in Fig. 1.

In addition, two or more computing systems or equipment can be substituted by any controller described herein.Therefore, also Such as redundancy can desirably be realized and replicate the principle and advantage of equal distribution processing to increase controller described herein Robustness and performance.Controller can also be in computer system or in times using any appropriate interface mechanism and the communication technology It is implemented in the system extended in meaning network environment, telecommunications of the communication technology for example including any appropriate format is (for example, sound Sound and modem etc.), public switched telephone network (PSTN), enfeoffment data network (PDN), internet, Intranet and it Combination etc..

Illustrated with reference to operation of the flow chart shown in Fig. 7 to example data extraction process.Flow in Fig. 7 Maximumlly the threshold voltage of simple drive circuit and move in the aperture that figure represents to be used to be determined to make pixel 104 in Fig. 1 The example machine readable of shifting rate.In this example and any other flowchart illustration herein, machine readable instructions Including the algorithm performed by (a) processor, (b) controller and/or (c) one or more of the other appropriate processing unit.It is described Algorithm, which can be embodied in, is stored in such as flash memory, CD-ROM, floppy disk, hard disk drive, digitized video (general) CD (DVD) or in the software in the entity medium such as other storage devices, but those of ordinary skill in the art will be readily understood that, Alternately, whole algorithms and/or some algorithm can be performed by equipment rather than processor, and/or with many weeks The mode known is implemented in firmware or specialized hardware (for example, it can be by application specific integrated circuit (ASIC), programmable logic device Part (PLD), field programmable logic device (FPLD), field programmable gate array (FPGA) and discrete logic etc. are realized).Example Such as, any or all component of abstraction sequence can be realized by software, hardware and/or firmware.Moreover, can manually realize by The some or all of machine readable instructions that flow chart (including Fig. 7) herein represents.In addition, though with reference to diagram herein Flow chart (including Fig. 7) exemplary algorithm is illustrated, but those of ordinary skill in the art will be readily understood that, can Alternatively, many other methods for performing example machine readable can be used.Such as, thus it is possible to vary the execution of module is suitable Sequence, and/or can change, eliminate or combine some modules.

By making corresponding selection and line program conducting select studied pixel or image element circuit 104 (700).Once Pixel 104 is have selected, reading is just performed with four-stage.Readout by first in reseting stage to OLED (C_oled) two The parasitic capacitance at end is discharged and started (702).Next, making driving transistor conducting sometime measure, this makes some electricity Lotus can be accumulated in OLED C_oledOn the electric capacity at both ends (704).In integration phase, end selection transistor, so that OLED C_oledCharge separation on the electric capacity at both ends and then by circuit parasitic capacitance (C_P) it is precharged to known voltage electricity Flat (706).Finally, in the reading stage, turn on driving transistor again, so that OLED C_oledElectricity on the electric capacity at both ends Lotus can be transferred to charge-pump amplifier output end (708).The output of amplifier is represented as mobility and threshold voltage Function amount.The readout is to select pixel by cancelling while other pixels are corrected to prevent interference and complete Into (710).

Fig. 8 is the difference for image element circuits such as three transistor circuits in the transistor circuit and Fig. 5 in Fig. 2 Extracting cycle and the flow chart of parameter application.One process is to be related to integration (800) in the pixel of electric charge transmission.By with concern The related charge accumulation of parameter is in the internal capacitance of pixel (802).Then, such as charge pump or integrator are transferred the charge to Deng outside reading circuit to establish proportion expression voltage (804).Another process is from pixel integration (off-pixel ) or direct integral (810) integration.By the outside reading circuit such as charge pump or integrator circuit come directly Device current is integrated (812).

During the two, caused voltage is post-processed, to obtain the threshold voltage of such as driving transistor Or the parameter (820) of the concern such as mobility or OLED conducting voltage.Then, the parameter of extraction can be used for various applications (822).Include changing programming data according to the parameter of extraction to compensate pixel change using the example of these parameters (824).Another example is to carry out preaging (826) to the panel of pixel.Another example is to assess the face of the pixel after manufacturing The process yields (828) of plate.

Fig. 9 is the block diagram and flow chart of the component of data extraction system, and the data extraction system includes image element circuit 900th, switch enclosure 902 and can be charge pump/integrator reading circuit 904.The constituent components (910) of image element circuit 900 The storage device such as the drive device such as light-emitting device, driving transistor, capacitor and such as such as including OLED The accesses such as selecting switch switch.The constituent components 912 of switch enclosure 902 include the one group of electronic cutting that can be controlled by external control signal Close.The constituent components 914 of reading circuit 904 include amplifier, capacitor and reset switch.

The parameter of concern can be stored as shown in frame 920.The parameter paid close attention in this example may include driving transistor The conducting voltage of threshold voltage, the mobility of driving transistor and OLED.The function frame 922 of switch enclosure 902 represents.It is described Function include manipulating electric current inside and outside image element circuit 900, provide positioned at image element circuit 900 and reading circuit 904 charge pump it Between discharge path and the charge pump of reading circuit 904 is isolated with image element circuit 900.The function frame of reading circuit 904 924 represent.One function is included as in step 800 in fig. 8 to 804, in the case of being integrated in pixel, in the future Transmitted from the electric charge of the internal capacitance of image element circuit 900 to the capacitor of reading circuit 904, it is proportional to the electric charge to produce Voltage.Another function is included as in step 810 in fig. 8 to 814, sometime interior to image element circuit 900 Driving transistor or OLED electric current integrated, to produce the voltage with the current in proportion.

Figure 10 is the threshold voltage of driving transistor 520 and carrying for mobility in the revision for the circuit for being related to Fig. 5 The timing diagram of the signal taken, in the revision, the grid of output transistor 534 be connected to single control signal wire RD and It is not SEL lines.Readout in Figure 10 has pre-charging stage 1001, integration phase 1002 and read the stage 1003.Pre- During charging stage 1001, by making SEL signals and RD signals are high to make at the grid of driving transistor 520 and source electrode V_AAnd V_BIt is reset to initial voltage.

During integration phase 1002, signal RD step-downs, grid voltage V_AIt is maintained at V_init, and source electrode (node 544) place Voltage V_BRecharged to the voltage of the function as TFT characteristics (it includes mobility and threshold voltage), for example, (V_init–V_T)。 If the long enough of integration phase 1002, voltage V_BTo only be threshold voltage (V_T) function.

During the stage of reading 1003, signal SEL is low, V_ADrop to (V_init+Vb–V_T) and V_BDrop to V_b.Reading In circuit 504, electric charge is from the total capacitance C at node 544_TIt is transferred to integrated capacitor (C_int)552.Can be by using electricity The analog-digital converter (Analog-to-Digital Convertor, ADC) of the output of lotus amplifier 550 exports to read Voltage V_out.Alternately, comparator can be used in adjustment V_initWhile by output voltage compared with reference voltage, Until the two voltages are changed into identical.The reference voltage can produce in the following way：Do not having in during a stage There is any pixel to be sampled in the case of being connected to circuit to circuit, and pixel charge is taken in another stage Sample.

Figure 11 is the input signal of the extraction of the conducting voltage of the OLED 522 in the revision for Fig. 5 circuit Timing diagram.

Figure 12 is for reading the circuit diagram of the image element circuit of pixel status by externally initializing node.Driving is brilliant Body pipe T1 has drain electrode be connected with supply voltage Vdd, with the OLED D1 source electrodes being connected and via switching transistor T2 and The grid of Vdata lines connection.Transistor T2 grid is connected to write line WR.Storage Cs is connected to node A, and (it is located at Between driving transistor T1 grid and transistor T2) and node B (it is located between driving transistor T1 source electrode and OLED) Between.Transistor T3 is read node B is connected into monitoring line and controlled by the signal on read line RD.

Figure 13 be a diagram that the timing diagram of the operation of Figure 12 circuit for externally initializing node.The P1 phases in the first stage Between, driving transistor T1 is programmed using blanking voltage V0, and via monitoring line OLED voltage externally set to Vrst.During second stage P2, reading signal RD ends transistor T3, and therefore OLED voltage is put by OLED D1 Electricity, until OLED ends (generating OLED conducting voltages threshold value).During phase III P3, via monitoring line cutting OLED Only voltage is transmitted to outside reading circuit (for example, using charge amplifier).

Figure 14 be a diagram that by externally initializing node the flow chart that is read out to pixel status.In the first step In rapid, internal node is resetted so that at least one pixel components conducting.It is steady that second step provides inner/outer node The fixed time to expectation state (for example, cut-off state).Third step reads the cut-off state value of internal node.

Figure 15 be a diagram that the timing diagram of the improved operation of Figure 12 (being still used to internally initialize node) circuit. During first stage P1, driving transistor T1 is programmed using conducting voltage V1.OLED voltage is risen to than its electric conduction Press the higher voltage of threshold value.During second stage P2, driving transistor T1 is programmed using blanking voltage V0, and therefore OLED voltage is discharged by OLED D1, until OLED ends (so as to generate OLED conducting voltages threshold value).In the phase III During P3, by OLED conducting voltages threshold packet transmission to outside reading circuit (for example, using charge amplifier).

Figure 16 be a diagram that by internally initializing node the flow chart that is read out to pixel status.First step Make the pixel conducting for being selected for measurement so that inner/outer node is stable to conducting state.Second step makes the picture of selection Element cut-off so that inner/outer node is stable to cut-off state.Third step reads the cut-off state value of internal node.

Figure 17 be a diagram that the circuit diagram of the image element circuit shown in two Figure 12, and the two circuits are via their own reading Transistor T3 is taken to be connected to common monitoring line, and Figure 18 be a diagram that the group for reading pixel charge using the monitoring line shared Close the timing diagram of the operation of circuit.In the first stage during P1, pixel is programmed using blanking voltage V0 and V03, and will OLED voltage is reset to VB0.During second stage P2, signal RD cut-offs are read, and when other signals are in cut-off state, The pixel to be measured is programmed using conducting voltage V1.Therefore, it is in the other pixels being connected with monitoring line and resets shape During state, the OLED voltage for being selected for the pixel of measurement is higher than its on state threshold voltage.During phase III P3, also by The pixel after being programmed using conducting voltage is programmed to keep it turned off using blanking voltage V02.In this stage, select The OLED voltage for the pixel selected is discharged to its on state threshold voltage.During fourth stage P4, retaking of a year or grade OLED voltage.

Figure 19 be a diagram that the flow chart of the reading with the pixel status for sharing monitoring line.First step makes all pixels End and make inner/outer node reset.Second step makes the pixel conducting for being selected for measurement so that inner/outer section Point is set to conducting state.Third step ends the pixel of selection, so that inner/outer node is stable to cut-off state. Four steps reads the cut-off state value of internal node.

Figure 20 A illustrate such image element circuit：Wherein, line Vdata (program voltage) is via switching transistor T2 connections To node A, and line Monitor/Vref (Vref is reference voltage) is connected to node B via transistor T3 is read.Node A connections To driving transistor T1 grid and be connected to storage Cs side.Figure 20 B are Figure 20 A benefit of the use based on electric charge The timing diagram of the operation for the circuit repaid.Node B be connected to driving transistor T1 source electrode, storage Cs opposite side and open Transistor T4 drain electrode is closed, the switching transistor T4 is connected between the source electrode of driving transistor and power voltage source Vdd.This Operation in the case of kind is as follows：

1. during programming cycle, the program voltage V for being supplied to node A from line Vdata via transistor T2 is used_PTo picture Element is programmed, and node B is connected to the reference voltage Vref supplied via transistor T3 from line Monitor/Vref.

2. during discharge cycle, reading signal RD ends transistor T3, and therefore the voltage at node B is adjusted to Partially compensate for driving transistor T1 change (for example, aging).

3. during the driving stage, write signal WR make transistor T2 end, and one section delay (it can be zero) it Afterwards, signal EM turns on transistor T4, and supply voltage Vdd is connected into driving transistor T1.Therefore, driving transistor T1 Electric current is by being stored in capacitor C_SIn voltage control and identical electric current flow to OLED.

In another construction, reference voltage Vref is provided to node A via switching transistor T2 from line Vdata, and saves Point B is supplied with the program voltage Vp supplied via transistor T3 is read from Monitor/Vdata lines.In this case operation It is as follows：

1. during programming cycle, node A is charged to the reference voltage supplied via transistor T2 from line Vdata Vref, and the program voltage Vp supplied via transistor T3 is read from line Monitor/Vref is supplied to node B.

2. during discharge cycle, reading signal RD ends transistor T3, and therefore the voltage at node B is adjusted to Partially compensate for driving transistor T1 change (or aging).

3. during the driving stage, write signal WR ends transistor T2, and one section of delay (it can be zero) it Afterwards, signal EM turns on transistor T4, and supply voltage Vdd is connected into driving transistor T1.Therefore, driving transistor T1 Electric current is by being stored in capacitor C_SIn voltage control and identical electric current flow to OLED.

Figure 21 is the behaviour for being used for producing the circuit of the reading of driving transistor T1 electric current and/or voltage for Figure 20 A The timing diagram of work.It can use or pixel is programmed without using during electric discharge.If there is during electric discharge, then it can be Make capacitor C_SThe short time partly discharged, or it can be with long enough so that capacitor C_SElectric discharge is until driving transistor T1 Cut-off.In the case of short discharge time, driving transistor can be read by applying fixed voltage during readout time T1 electric current, or can by via read transistor T3 from line Monitor/Vref apply fixed current come read by as Voltage caused by the driving transistor T1 of amplifier., can be with retaking of a year or grade due to electric discharge and in node B in the case of long discharge time Voltage caused by place.This voltage represents driving transistor T1 threshold voltage.

Figure 22 is the timing diagram for being used for producing the operation of the circuit of the reading of OLED voltage for Figure 20 A.In Figure 22 institutes In the case of description, image element circuit is programmed so that driving transistor T1 is used as and (has high break-over voltage) switch, and OLED curtage is measured by transistor T1 and T3.In another case, at by concept transfer A and node B Voltage measures multiple current/voltage points, and can be from the voltage of the formulas Extraction OLED between these electric currents and voltage.Example Such as, if driving transistor T1 is operated in linear zone, OLED voltage more influences driving transistor T1 electric current；Cause This, by having current point in the driving transistor T range of linearity and operated in saturation area, can by transistor T1 voltage- Current relationship extracts OLED voltage.

If two or more pixels share identical monitoring line, it is used for by the way that blanking voltage is applied to not selected OLED measurement pixel driving transistor T1 come make these pixels end.

Figure 23 be for Figure 20 A generation OLED voltage reading circuit improvement operation timing diagram, the improvement Operation is as follows：

1. during reseting stage, OLED is charged using conducting voltage.

2. during discharge regime, signal Vdata ends driving transistor T1, and therefore OLED voltage is passed through OLED It is discharged to blanking voltage.

3. during the reading stage, pass through driving transistor T1 and reading transistor T3 retakings of a year or grade OLED blanking voltage.

Figure 24 is illustrated for the circuit from the image element circuit extraction parasitic capacitance using external compensation.Show for OLED Show in most of external compensation systems of device, the internal node of pixel is different during measuring with drive cycle.Therefore, post The influence of raw electric capacity will not be extracted correctly.

It is the step of being used to compensate parasitic parameter below：

1. using under one group of voltage/current (outside voltage/current or the voltage/current of inside) measurement first state Pixel.

2. use different one group of voltage/current (outside voltage/current or the voltage/current of inside) second shapes of measurement Pixel under state.

3. based on the pixel model including parasitic parameter, the parasitic parameter of measurement extraction twice is (if the model needs in the past Measure more times, then the voltage/current repeat step 2 for different groups).

Another technology is experimentally to extract parasitic effects.For example, two groups of measurements can be subtracted, and pass through gain Difference is added into other measurements.The gain can be extracted experimentally.For example, the difference after bi-directional scaling can be increased The measurement group extremely made for the panel of specific gray scale.Experimentally the comparative example factor it can be adjusted, until panel On image it is up to specification.After this, this scale factor can be used as the preset parameter for all other panel.

An externally measured method for parasitic parameter is that electric current is read.In the case, it is extraction parasitic parameter, can be with Change the external voltage set by measuring circuit for two groups of measurements.Figure 24 is shown with the reading for being used to measure pixel current The pixel of line.The voltage of sense line is by measuring unit bias voltage (V_B) control.

Figure 25 illustrates the image element circuit available for current measurement.Use the program voltage V after calibration_calPixel is carried out Programming, and monitoring line is set as V_ref.Then, transistor T3 conductings are made to measure driving transistor by using control signal RD T1 electric current.During drive cycle, the voltage at node B is in V_oled, and the voltage at node A is from V_calIt is changed into V_cal+ (V_oled-V_ref)C_S/(C_P+C_S), here, V_calBe calibration after program voltage, C_PIt is total parasitic capacitance at node A, and V_refIt is Monitoring voltage during programming.The grid-source voltage V of driving transistor_GSDuring programming cycle and during drive cycle It is different, it is respectively (V_P-V_ref) and [(V_P-V_ref)C_S/(C_P+C_S)-V_oledC_P/(C_P+C_S)].Therefore, program and measure the phase Between electric current due to by influence compensation parasitic capacitance and it is different from driving current, especially if deposited in driving transistor T1 If significant mobility change.

In order to extract measurement during parasitic effects, during measurement monitoring line at can have with the programming cycle phase Between voltage (V_ref) different voltage V_B.Therefore, the grid-source voltage V during measurement_GSTo be [(V_P-V_ref)C_S/(C_P+ C_S)-V_BC_P/(C_P+C_S)].Two different V can be used_B(V_B1And V_B2) extract parasitic capacitance C_PValue.In a kind of situation Under, voltage V_PIdentical and electric current for two kinds of situations is by difference.Pixel current formula can be used and from the difference of two electric currents Extract parasitic capacitance C_P.In another case, a V can be adjusted_PTo obtain and the electric current identical electricity in other situations Stream.In this case, the difference will be (V_B1-V_B2)C_P/(C_P+C_S).Therefore, because known to all parameters, it is possible to carry Take C_P。

Figure 26 illustrates the pixel with electric charge readability.Here, internal capacitor is charged and then will Electric charge is transmitted to charge integrator, or electric current is integrated by electric charge reading circuit.In the feelings integrated to electric current Under condition, method described above can be used in extracting parasitic capacitance.

When it is expected to read the electric charge being integrated in capacitor internally, in addition to voltage is directly adjusted, can also make Parasitic capacitance is extracted with two different times of integration.For example, in the image element circuit shown in Figure 25, OLED electricity can be used Appearance is internally integrated to pixel current, and the pixel electricity then can be externally transmitted using charge-pump amplifier Stream.In order to extract parasitic parameter, voltage can be changed using method described above.However, due to the essence of charge integration, When being integrated in OLED electric capacity to electric current, two different times of integration can be used.

Increase with node B voltage, influence of the parasitic parameter to pixel current becomes big.Therefore, when there is longer integration Between measurement cause bigger voltage at node B, and thus more influenceed by parasitic parameter.Charge value and pixel can be used public Formula extracts parasitic parameter.Another method is to ensure the AVHRR NDVI electric charge with the time of integration by adjusting program voltage It is identical for two kinds of situations.Then, it is as discussed above, parasitic capacitance can be extracted using the difference between two voltages.

To being compensated in the pixel based on electric charge of intelligent pixel

In fig. 26, the signal of each pixel and bias voltage line can be shared or replaced by other signals and realize identical Function.Figure 26 image element circuit is only exemplary.Moreover, it can easily change the position of load (for example, light emitting diode) Put.Furthermore it is possible to each TFT is changed into by n-type TFT based on complementary circuit concept.As the image element circuit shown in Figure 26 Image element circuit uses in the following way to be compensated in the pixel based on electric charge：Electric charge is generated at the internal node of image element circuit (it is generally stored inside storage capacitance C_SIn) and make in the electric charge it is at least some can be removed or T1 can be used as and/or OLED function electric discharge, to allow to produce the parameter of the threshold voltage such as T1 inside image element circuit.

In fig. 26, during programming, offset voltage is produced at node D, bias voltage is applied to node B and C simultaneously And program voltage is applied to node C.

, can be using the charging method illustrated by timing diagram as shown in Figure 26 or as by this in order to form compensation circuit The illustrated ground of the earlier application of application claims priority applies bias current by monitoring line like that.

Switching transistor Tb2 addition eliminate it is undesirable luminous during programming/compensation cycle because it makes electric current It is diverted through Vb2.

This circuit also allows to read pixel or OLED current/voltage as is described elsewhere herein.

This pixel can also read TFT or OLED current, voltage or electric charge by Tm.

Read for TFT, predefined parameter (or the voltage calculated) can be used to be programmed pixel, then make Tm Conducting.Here, because Tm is turned on, so the voltage of monitoring line is smaller than OLED voltage.This will ensure that OLED ends.At this moment, Pixel current can be read.Another method：WR and RD conductings and EM cut-offs, and curtage is applied to monitoring line and returned Read current or voltage.Moreover, apply to monitoring line curtage can be include zero any value.

In order to read OLED (curtage), pixel can be programmed so that driving TFT be used as switch (for example, Vb1 can be adjusted, so that Td is changed into switch).It is then possible to read OLED current or voltage by monitoring line.

For being read to OLED current or the another of voltage, EM signals can end, thus without electric current by Td, and because This can read OLED current or voltage.

For being read to OLED current or the another of voltage, V can be changed into during programming cycle with node D_OLED's Mode selects Vb1.Then, can be with influence of the retaking of a year or grade OLED voltage to TFT after TFT programmings.

In figure 27, for example, EM signals are divided into two signals.This allows to reset node D using Tb, with based on such as Charge/discharge function pair voltage generation described by waveform in Figure 27 compensates.As can be seen that EM ' can be next line EM signals.

This pixel can also read TFT or OLED current, voltage or electric charge by Tm.

To read OLED current or voltage, pixel can be programmed so that driving TFT is used as switch (for example, can be with Vb1 is adjusted, so that Td is changed into switch).It is then possible to read OLED current or voltage by monitoring line.

For being read to OLED current or the another of voltage, EM ' signals can end, thus without electric current by Td, and Therefore OLED current or voltage can be read.

For being read to OLED current or the another of voltage, V can be changed into during programming cycle by node D_OLED Mode select Vb1.Then, can be with influence of the retaking of a year or grade OLED voltage to TFT after TFT programmings.

In Figure 28, for example, EM signals are divided into two signals.This allows to reset node D using Tb, with based on such as Charge/discharge function pair voltage generation described by waveform in Figure 28 compensates.Moreover, Tm and Tb2 are shared.

As can be seen that EM ' can be the EM signals of next line.

This image element circuit 104 also allows TFT or OLED current, voltage or electric charge are read or extracted by Tm.

Read for driving TFT curtages, predefined parameter (or the voltage calculated) can be used to enter pixel Row programming, then turns on Tm.In this example, because Tem is turned on, so the voltage of monitoring line is smaller than OLED voltage.This It will ensure that OLED ends.At this moment, pixel current can be read.Alternately, WR and RD conductings and EM ends, and by electric current or Voltage applies to monitoring line and retaking of a year or grade curtage.Moreover, the curtage for applying extremely monitoring line can include zero Any value.

To read OLED (current/voltage/electric charge), pixel can be programmed so that TFT provides zero current.Then, OLED current or voltage can be read by monitoring line.

For the circuit shown in Figure 29, during programming, while EM ends, answer node B by Tm and monitoring line Position and node C is charged to Vdata.During compensation cycle (cycle 4), node B is charged into work using driving TFT (Td) For the offset voltage of the function of Td characteristics.During the drive cycle (6), EM conductings, and therefore Td grid by being stored in C_SIn Program voltage and offset voltage limit.

This pixel can also read TFT or OLED current, voltage or electric charge by Tm.

Reading for driving TFT curtages, predefined parameter (or the voltage calculated) can be used to pixel It is programmed, then turns on Tm.Here, because Tem is turned on, so the voltage of monitoring line is smaller than OLED voltage.This will be true Protect OLED cut-offs.At this moment, pixel current can be read.Alternately, WR and RD conductings and EM ends, and by electric current or electricity Pressure applies to monitoring line and retaking of a year or grade curtage.In addition, the curtage for applying extremely monitoring line can include zero Any value.

To read OLED current or voltage, pixel can be programmed so that TFT provides zero current.Then, EM is turned on And OLED current or voltage can be read by monitoring line.

Programming and driving

In a construction of the compensation pixel circuit based on electric charge shown in Figure 30, the line being connected with T2 is data voltage And the line being connected with T3 is Monitor/Vref voltages.Operation in this example can carry out as follows：

During the period 1, pixel is programmed using program voltage (VP), and node B is connected to reference to electricity Pressure.

During second round, the cut-off of RD signals, and therefore partly adjust the voltage at node B with T1 is changed (or Aging) compensate.

During the phase III, the cut-off of WR signals, and after one section of delay (it can be zero), EM conductings.Therefore, T1 Electric current be stored in C_SIn voltage control and identical current direction OLED.

In another construction, the line being connected with T2 is reference voltage (Vref) and the line that is connected with T3 is Monitor/ Vdata lines.

During the period 1, node A is charged into reference voltage, and node B is connected to program voltage (VP).

TFT is driven to read

Reading for the curtage of the driving T1 shown in Figure 31, pixel is entered (using or without using the electric discharge period) Row programming.If there is the electric discharge period, then it can make capacitor C_SThe relatively short time partly discharged, or it can Make capacitor C to grow to_SElectric discharge is until driving T1 cut-offs., can be by phase readout time in the case of short discharge time Between apply fixed reference voltage to read driving T1 electric current, or can be by applying fixed electric current via T3 to read The voltage as caused by the driving T1 as amplifier.In the case of long discharge time, can with retaking of a year or grade by caused by electric discharge Voltage caused by node B.This voltage will represent T1 threshold voltage.

Moreover, in whole process, WR signals can be held on.

OLED is read

In the image element circuit shown in Figure 32, T1 is programmed to serve as and (there is high break-over voltage) switch. Furthermore, it is possible to by T3 and T1 come the curtage that measures or extract OLED.

In another example, several current/voltage points are measured by the voltage at concept transfer A and node B1, and Can be from the voltage of the formulas Extraction OLED between these electric currents and voltage.For example, if T1 were in its linear zone, OLED Voltage can more influence T1 electric current；Therefore, by having current point, Ke Yicong in T linear and operated in saturation area T1 voltage-current relation extraction OLED voltage.

If several pixels share identical monitoring line, not selected use will be made by the way that blanking voltage is applied to T1 In the pixel cut-off of OLED measurements.

In the image element circuit shown in Figure 33, the reading of OLED curtage can be carried out as follows：

During reseting stage, OLED is charged using conducting voltage.

T1 cut-offs are driven, and therefore OLED voltage is discharged to blanking voltage by OLED.

Pass through T1 retaking of a year or grade blanking voltages.

In foregoing image element circuit, can using RD or WR inverse signal as EM signals (so EM signals can correspond to/ RD or/WR).In this case, it is possible to invert signal and be passed to pixel, or can be produced using complementary type TFT Raw inverse function.If for example, PMOS switch is used for into RD TFT, nmos switch can be used for EM TFT.

Furthermore, it is possible to replaced using the reverse signal of next RD or WR signals (or previous RD signals) as current line EM signals.Similarly, RD and WR inverse function can be realized outside image element circuit and is passed to image element circuit, Huo Zheke To be combined using complementary type TFT.

Figure 34 illustrates the another method that luminous EM functions are realized in the image element circuit 104 based on electric charge.Here it is possible to Luminous EM signals are produced using control signal RD and WR reversion.Therefore, if either of which person turns on, pixel electricity Road will disconnect with power vd D.Similarly, RD and WR inverse function (/RD and/WR) can be realized outside image element circuit 104 simultaneously Image element circuit is passed to, or can be combined using complementary type TFT.Although NMOS TFT can be used for T4 and T5, push away Recommend (but not necessarily) PMOS is used for these TFT and NMOS is used for WR and RD (for example, S2 and S3).

Image element circuit 104 in Figure 34 includes the driving transistor T1 being connected with light-emitting device (OLED) and with driving crystalline substance Body pipe T1 connections and the storage device (C for storing programming information_S), so that OLED lights according to the programming information via T1.C_S Can (rather than must) be directly connected between T1 grid and the first terminal (source electrode or drain electrode, this depend on T1 be NMOS also It is PMOS).T1 Second terminal (the other of source electrode or drain electrode) can be connected to OLED.

Figure 34 image element circuit 104 includes first switch S2, and the first switch S2 is connected to T1, and (it can with First Line Transmission programming information Vdata or reference voltage Vref) between so that T1 is connected into First Line according to the first signal (for example, WR). Image element circuit 104 is connected between T1 and the second line with according to secondary signal (example including second switch S3, the second switch S3 Such as, RD) the second line (it at least has two functions) is connected to T1.Second line can be used as monitoring line, electric from pixel with monitoring The curtage that the one or more assemblies on road are read.Second line can be additionally used in reference voltage Vref or programming information Vdata is provided to the internal node B of image element circuit.

Figure 34 image element circuit 104 includes the 3rd switch (S4) and the 4th being connected in the line between T1 and power supply Vdd Switch (S5).3rd switch (S4) and the 4th switch (S5) and their own control signal have first switch S2 and second Switch S3 and the inverse function of their own control signal.This means S2 and S3 can be n-type transistor, and S4 and S5 are P-type transistor.Or S2 and S3 can be p-type transistor, and S4 and S5 are n-type transistors.Or S2 to S5 can be phase The transistor of same type (n-type or p-type), but S4 and S5 is controlled by the signal of the reversion of the signal as control S2 or S3.Example Such as, S4 can be controlled by/WR or/RD controls and S5 by/RD or/WR, and S2 is controlled by WR and S3 is controlled by RD.Or can be with Two switch S4 and S5 are replaced using the single switch of the control signal with its own.In other words, the inverse function is phase Opposite state.For example, when the first and second switch conductions or controlled by respective control signal and when turning on, then the third and fourth switch Cut-off is controlled and ended by respective control signal.

In this example, it is only necessary to minimum two control signals RD and WR (and can directly be exported from RD and WR respectively Their inverse signal), to realize in pixel compensation and outside by reading image element circuit curtage via the second line Compensation.When first switch S2 is closed, First Line can provide program voltage (Vdata) or reference voltage (Vref) to storage Device C_S。

For the skew of internally compensating parameter (similar T1 threshold voltage), the S2 that First Line passes through closure (WR is effective) Apply Vref, the node B of inside is charged into Vref.Make C_SIn storage electric charge electric discharge the period in discharge, until electric charge Represent at least T1 threshold voltage.Make WR invalid, now, C_S(it is T1 to the function for being changed into Vdata-Vdischarge at both ends With OLED function).

In order to from the component of image element circuit (for example, T1 or OLED, or both) read current or voltage, make RD effectively with S3 is closed, this allows to read curtage (monitoring function) from the second line.During programming cycle, when S3 is closed, the Two wires can also be used to provide Vdata to S3.In this way, it is possible to by using the second line drawing circuit parameter and by circuit Parameter is stored to being compensated come the change outside image element circuit to image element circuit or aging outside image element circuit.The circuit Parameter can be at least T1 or at least OLED or at least T1 and OLED curtage.

Pay attention to, can be from First Line or the second line (but not being simultaneously) supply reference voltage in Figure 34 image element circuit Vref.The electric charge associated with the Vref of supply is maintained at C_SIn.Likewise it is possible to (but it is not from First Line or the second line Program voltage Vdata is supplied simultaneously), and Vdata is at least initially kept at C_SIn.OLED is according in the Vdata at least stored A part and light.It can increase from program voltage or subtract internal or external compensation.This flexibility allows in pel array Multiple row between share one line or two lines.Control signal RD and WR can be also total between multiple rows of image element circuit With.

Figure 34 further relates to extract circuit parameter from image element circuit and difference for image element circuit or aging are provided in pixel and mended The method repaid.Methods described includes：By the way that reference voltage (Vref) is applied into image element circuit from First Line or the second line Storage device (C_S) with based on reference voltage (Vref) to storage device (C_S) charged, cause in image element circuit Drive device (T1) or light-emitting device (OLED) or the difference of both or aging compensated in self-compensating pixel.The side Method includes：Allow to join from First Line or the second line reading circuit by closing the switch in the image element circuit (S2 or S3) Number (for example, flowing through T1, OLED or T1 and OLED curtage), is carried using the circuit outside image element circuit from image element circuit Sense circuit parameter.Methods described includes：Next, the programming information compensated using the circuit parameter for having been based at least extracting (for example, derive from Vdata) drives image element circuit.When image element circuit and First Line and the second line are disconnected and even When two switches (S4 and S5) being connected in the line between drive device (T1) and power supply (VDD) are all closed, driving week is performed Phase.

The common switch between multiple row and/or multiple rows

Figure 35 shows the image element circuit of prior art.In operation, during programming, EM cut-offs and WR conductings.

Pixel is applied a current to by Iref and applies program voltage (VP) to Vdata.At node A and node B Produce the bias voltage (VB) of the function as Iref and T1 characteristics.C_SIn storage voltage be VP-VB.

During driving/light period：Luminous circulation EM conductings and write signal WR cut-offs.Node C is from program voltage VP It is changed into supply voltage VDD.Node A is booted (boot-strap) by capacitor CS and moved with identical value (VDD-VP) It is dynamic.Therefore, the voltage at node A will be VB+VDD-VP.During this cycle, the electric current proportional to the VP using VB compensation Driving transistor T1 and OLED will be flowed through.

Now the operation to the image element circuit shown in Figure 36 illustrates.Switch can be shared between each row and each row. Tc and Td can be shared by each row.Ta and Tb can be shared by row and column.

If only row occur to share, SEM and SWR can be identical with EM and WR.

If row also occurs to share, SEM and SWR are used as overall signal.

Pair with during the programming of identical SEM and the SWR row being connected, SEM cut-off and SWR turn on.In the drive of these rows During dynamic/luminous, SEM conductings and SWR cut-offs.

Shared condition in Figure 37 is identical with the image element circuit in Figure 36, but programming cycle is different.In programming cycle, SEM/EM ends and SWR/WR is turned on.When starting, node B and A are reset to Vref by RD conductings.Hereafter, RD ends, and uses T1 charges to node B and A.Charge volume is the function of T1 parameters.Therefore, at node A develop voltage be T1 function simultaneously Heterogeneity/aging to it during driving/light period is compensated.

The operation of image element circuit in Figure 36 and shared principle are identical with Figure 37.

Figure 38 shows the 3 transistor pixels circuits that the compensation based on electric charge can be used.Vdata includes program voltage, and Vref provides reference voltage via T3.Control signal RD and WR control T3 and T2 respectively for each image element circuit, and SEM and SWR control signals are global.SWR is shared between each row, and SEM can be shared between each row/each row.

Figure 39 A to Figure 49 B show the change (for example, aging and processing heterogeneity) for the parameter to image element circuit The various image element circuits and corresponding timing diagram compensated.It will be appreciated by one of skill in the art that how to connect shown in the drawings each Kind component.The mark used is consistent with the mark that text of the statement uses.T1 is typically to be used for according to being stored in capacitor C_S In electric charge match electric current driving OLED driving transistor.This electric charge can with or can not be to the threshold value as driving transistor T1 The skew of voltage is such to be influenceed to carry out self compensation.Other transistors are marked as T2, T3 and T4 etc..Control signal is labeled, Wherein RD=is read, and WR=writes and EM=lights.EM signals control whether to make OLED conductings be lighted.Vdd is power supply Voltage.Vdata be transmit corresponding to voltage form programming information signal wire, the programming information can with or can not be externally The change of one or more parameters of compensation pixel circuit.The line for being marked as Monitor be used for from image element circuit (for example, From both T1, OLED or T1 and OLED) read or extraction curtage signal wire.Extraction is used outside from image element circuit The change that comes to the parameter including the skew of T1 or OLED or the threshold voltage of both of the curtage it is (all Such as aging) compensate.In timing diagram, " programming " refers to that programming information is applied to Vdata (in the form of voltage or current) Line is simultaneously stored in C_SIn programming cycle." electric discharge " is to instigate to be stored in C_SIn electric discharge phase for discharging at least in part of electric charge Between.During discharging herein, C_SFinal voltage generally settled out at the value of threshold voltage for representing T1, and be used to pin Skew to T1 threshold voltage and internally self compensation is carried out to the program voltage of application.Finally, " drive scheme " refers to OLED is connected to supply voltage VDD and electric current is according to being stored in C_SIn residual charge flow to the luminous of OLED." programming/benefit Repay " refer to the mixing cycle that programming and internal or external compensation can occur.It is preferred that but not necessarily, first carry out internal Compensation, then carries out external compensation.However, each aspect of the present invention is not limited to any particular order --- external compensation can be prior to Internal compensation.RESET operation is to instigate image element circuit (for example, being stored in C_SIn electric charge) reset." reading " operation refers to lead to Cross and read or extract curtage from image element circuit (for example, both T1, OLED or T1 and OLED) using monitoring line.

It is described herein and show many different embodiments for being not only used for internal compensation and being used for external compensation again.Ying Qing Understand to Chu, any combinations of any image element circuit and any timing diagram can be used herein.It is described herein any Image element circuit can be worked with any other sequential shown in any other accompanying drawing and operation cycle, and any sequential and operation Cycle can be used or modified to be operated together with any image element circuit described herein.Because those skilled in the art can Any appropriate voltage level or sequential duration is selected to realize any specific embodiment, so all voltage levels, Formula and sequential duration are only exemplary and be not restricted.

Although the particular embodiment of the present invention and application are illustrated and have illustrated, but it is to be understood that the present invention is unlimited In accurate construction and composition described herein, and without departing from this hair such as limited in appended claims of the invention In the case of bright spirit and scope, various modifications, change and change of the invention are obvious from explanation above.

Claims

1. a kind of change or aging from image element circuit extraction circuit parameter and to the image element circuit provides what is compensated in pixel Method, the image element circuit include light-emitting device, for programmable drive current to be provided to the driving dress of the light-emitting device Put, programming input and the storage device for storing programming signal, methods described include：

By applying the storage device into image element circuit from First Line or the second line by reference voltage to refer to electricity based on described Pressure the storage device is charged, with to the drive device in the image element circuit or the light-emitting device or this two The change or aging of person carries out self compensation, thus causes to compensate in the pixel of the image element circuit；

By closing the first switch in the image element circuit using the circuit outside the image element circuit from the image element circuit The circuit parameter is extracted, to allow to outside the image element circuit from the First Line or from described in second line reading Circuit parameter；And

Then, the programming information after being compensated by using the circuit parameter at least based on extraction is described to drive Image element circuit, wherein, it is when the image element circuit is disconnected with the First Line and second line and in place being connected When second switch in line and the 3rd switch between the drive device and power supply are closed, the driving is performed so that institute Light-emitting device is stated to be lighted according to the programming information compensated.

2. a kind of image element circuit with light-emitting device, it includes：

Driving transistor, it is connected to the light-emitting device；

Storage device, it is connected to the driving transistor and stores programming information, so that the light-emitting device is according to via institute State the programming information of driving transistor and light；

First switch, it is connected between the driving transistor and First Line, with according to the first signal by the driving crystal Pipe is connected to the First Line；

Second switch, it is connected between the driving transistor and the second line, to be connected second line according to secondary signal The driving transistor is connected to, wherein, the First Line or second line close in the first switch and the second switch Reference voltage is supplied to the storage device, and wherein when closing, applies the ginseng from the First Line or second line Voltage is examined to carry out certainly with the change to the image element circuit or aging to charge to the storage device according to the reference voltage Compensation；And

3rd switch and the 4th switch, it is connected in the line between the driving transistor and power supply, and the described 3rd opens Close and the described 4th switch and their own control signal have the first switch and the second switch and they The inverted signal function of respective control signal, wherein, by using the second line drawing circuit parameter and the circuit is joined Number is stored to the image element circuit, and the change or aging for the image element circuit are outside the image element circuit to described Image element circuit compensates.

3. image element circuit as claimed in claim 2, wherein, when the second switch is closed, second line is used to Voltage or electric current are read from the image element circuit, or by reference voltage supplies to the image element circuit.

4. image element circuit as claimed in claim 2, wherein, when the second switch is closed, second line is used to Voltage or electric current are read from the image element circuit, or program voltage is supplied to the image element circuit.

5. image element circuit as claimed in claim 2, wherein, the storage device is capacitor and is directly connected between the drive Between the grid of dynamic transistor and the first terminal of the driving transistor.

6. image element circuit as claimed in claim 4, wherein, the Second terminal of the driving transistor is connected to the luminous dress Put.

7. image element circuit as claimed in claim 2, wherein, by the way that the light-emitting device and the driving transistor are connected The node being connected together charges to reference voltage and discharged via the driving transistor with the storage table in the storage device Show the electric charge of the threshold voltage of the driving transistor, the image element circuit internally compensates the threshold of the driving transistor The change of threshold voltage.

8. image element circuit as claimed in claim 7, wherein, the circuit parameter be at least described driving transistor electric current or Voltage, the either curtage of at least described light-emitting device or at least described driving transistor and the light-emitting device Curtage.

9. image element circuit as claimed in claim 2, wherein, the first switch and the second switch are disposed in the picture In plain circuit so that supply reference voltage from the First Line or from second line rather than simultaneously from the First Line and Second line supplies reference voltage, and the reference voltage is charged to the storage device so that it keeps and the reference The electric charge that voltage matches.

10. image element circuit as claimed in claim 2, wherein, the first switch and the second switch are disposed in described In image element circuit so that supply program voltage rather than simultaneously from the First Line from the First Line or from second line Program voltage is supplied with second line, the program voltage is stored in the storage device so that the program voltage In at least a portion be used to the described at least a portion for making the light-emitting device in the program voltage and light.

11. image element circuit as claimed in claim 2, wherein, the 3rd switch is by first signal control and described the Four switches are controlled by the secondary signal, or, the 3rd switch is by the inverse signal control of first signal and described the Four switches are controlled by the inverse signal of the secondary signal, or, the 3rd switch is controlled and described the by the secondary signal Four switches are controlled by first signal, or, the 3rd switch is by the inverse signal control of the secondary signal and described the Four switches are controlled by the inverse signal of first signal.

12. image element circuit as claimed in claim 2, wherein, the first switch and the second switch be n-type transistor and 3rd switch and the described 4th switch are p-type transistors, or, the first switch and the second switch are p-type crystalline substances It is n-type transistor that body pipe and the 3rd switch switch with the described 4th so that when the first switch and the second switch During conducting, the 3rd switch and the described 4th switch end, and when the first switch and the second switch end, 3rd switch and the 4th switch conduction.

13. image element circuit as claimed in claim 2, wherein, the first switch, the second switch, the 3rd switch With the described 4th switch only by first signal and secondary signal control without other signals.

14. image element circuit as claimed in claim 13, wherein, make to be stored in the storage device by the driving transistor In charge discharge so that the voltage at the storage device both ends is at least the function of the threshold voltage of the driving transistor.

15. image element circuit as claimed in claim 2, wherein, the inverted signal function is inverse state so that when described first When switch and second switch conducting or controlled signal are controlled and turned on, the 3rd switch and the described 4th switch end Or controlled and ended by the control signal.