CN105957933A - LED epitaxial structure matched with AZO thin film current expansion layer and growth method therefor - Google Patents
LED epitaxial structure matched with AZO thin film current expansion layer and growth method therefor Download PDFInfo
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- CN105957933A CN105957933A CN201610580625.9A CN201610580625A CN105957933A CN 105957933 A CN105957933 A CN 105957933A CN 201610580625 A CN201610580625 A CN 201610580625A CN 105957933 A CN105957933 A CN 105957933A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
The invention provides a growth method for an LED epitaxial structure matched with an AZO thin film current expansion layer. The growth method comprises the steps of processing a sapphire substrate, enabling a low-temperature GaN core-forming layer to be grown, enabling a high-temperature GaN buffer layer to be grown, enabling a U type GaN layer to be grown, enabling an N type GaN layer to be grown, enabling a multi-period quantum-well light emitting layer to be grown, enabling a P type AlGaN layer to be grown, enabling a P type GaN layer to be grown, enabling an AlGaN: Mg contact layer to be grown, and performing annealing treatment. The final contact layer of the LED epitaxial structure is designed with the AlGaN: Mg structure, so that the LED epitaxial structure can be matched with the ZnO: Al(AZO) transparent conductive thin film, the contact resistance is lowered, and the operating voltage of the LED chip is lowered. The invention also disclose an LED epitaxial structure matched with the AZO thin film current expansion layer; and the LED epitaxial structure is simple and concise in the overall structure, and can be matched with the ZnO: Al(AZO) transparent conductive thin film, so that the contact resistance is lowered, and the operating voltage of the LED chip is lowered.
Description
Technical field
The present invention relates to LED field, be specifically related to outside a kind of LED mating AZO thin film current extending
Prolong structure and growing method thereof.
Background technology
Along with the development of the industries such as quasiconductor, computer, solar energy, a kind of new functional material is transparent
Conductive oxide film (transparent conducting oxide is called for short TCO thin film) Emergence and Development therewith
Get up.This kind of thin film has the photoelectric characteristics such as forbidden band width, visible range light transmission height and resistivity are low,
In semiconductor photoelectric device field, solaode, plane show, the aspect such as specific function window coating tool
Have broad application prospects.Wherein technology of preparing is the most ripe, most widely used surely belongs to In2O3Base (In2O3: Sn,
It is called for short ITO) thin film.But, due to In in ito thin film2O3Expensive, thus cause production cost the highest；
And, In material is poisonous, harmful in preparation and application process, it addition, the atomic weight of Sn and In
Relatively big, film forming procedure easily infiltrates into substrate interior, poisons backing material, especially at liquid crystal display device
Middle contamination phenomenon is serious.And Zn source low price in ZnO: Al (be called for short AZO) transparent conductive film, come
Source is abundant, nontoxic, and stability is better than ito thin film in hydrogen plasma, and have can be with ITO simultaneously
The photoelectric characteristic that thin film is comparable.So, AZO thin film replaces ito thin film and has certain superior in development
Property.
Apply in the market in LED chip be used as current extending be ITO (In2O3: Sn) transparent
Conductive film, so corresponding LED epitaxial structure is mainly designed for mating ITO material, typically uses GaN material
Material.And if do extension layer in chip top application AZO transparent conductive film, in order to reduce contact resistance,
Extension contact layer is badly in need of changing.
Summary of the invention
The present invention provides a kind of simple in construction, coupling AZO applied widely, easy to loading and unloading, with low cost
The growing method of the LED epitaxial structure of thin film current extending, concrete scheme is as follows:
A kind of LED epitaxial structure growing method mating AZO thin film current extending, includes processing successively
Sapphire Substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, grow U-shaped GaN layer,
Growth N-type GaN layer, growth multicycle mqw light emitting layer, growing P-type AlGaN layer, growing P-type
GaN layer, growth AlGaN:Mg contact layer and annealing；
Growth AlGaN:Mg contact layer particularly as follows:
After the growth of p-type GaN layer terminates, growth thickness is the AlGaN:Mg contact layer of 5-20nm, wherein:
MO source used is TMAl, TMGa, Cp2Mg；Growth temperature is 850 DEG C-1050 DEG C, and growth pressure is
100-500Torr, V/III mol ratio is that the molar content of 1000-5000, Al component accounts for 1%-20%, Mg and mixes
Miscellaneous concentration is 1E19-1E21atom/cm3。
In above technical scheme preferably, growth high temperature GaN cushion particularly as follows:
After the growth of low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out in-situ annealing process, annealing
Temperature is increased to 1000 DEG C-1100 DEG C, and annealing time is 5-10min；After annealing, temperature is regulated extremely
900 DEG C-1050 DEG C, continuing to be passed through TMGa, epitaxial growth thickness is the high temperature GaN cushion of 0.2-1um,
Growth pressure is 400-650Torr, and V/III mol ratio is 500-3000.
In above technical scheme preferably, grow U-shaped GaN layer particularly as follows:
After high temperature GaN buffer growth terminates, it is passed through NH3And TMGa, growth thickness is that 1-3um is non-to be mixed
Miscellaneous U-shaped GaN layer, wherein: growth temperature is 1050 DEG C-1200 DEG C, growth pressure is 100-500Torr,
V/III mol ratio is 300-3000.
In above technical scheme preferably, growth N-type GaN layer is particularly as follows: the growth of U-shaped GaN layer terminates
After, it is passed through NH3, TMGa and SiH4, growth thickness is the N-type GaN layer of 2-4um, and growth temperature is
1050-1200 DEG C, growth pressure is 100-600Torr, and V/III mol ratio is that the doping of 300-3000, Si is dense
Degree is 8E18-2E19atom/cm3。
In above technical scheme preferably, growth multicycle mqw light emitting layer is particularly as follows: N-type GaN layer is raw
After length terminates, growing multicycle mqw light emitting layer, MO source used is TEGa, TMIn and SiH4；
Multicycle mqw light emitting layer is built structure by the InyGa1-yN/GaN trap in 5-15 cycle and is formed, wherein:
SQW InyGa1-yThe thickness of N shell is 2-5nm, y=0.1-0.3；Growth temperature is 700-800 DEG C, growth pressure
Power is 100-500Torr, and V/III mol ratio is 300-5000；The thickness of GaN barrier layer is 8-15nm, growth
Temperature is 800-950 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, Si component
Molar content account for 0.5%-3%.
In above technical scheme preferably, growth P-type GaN layer is particularly as follows: the growth of p-type AlGaN layer terminates
After, growth thickness is the p-type GaN layer of 100-800nm, and MO source used is TMGa and Cp2Mg；
Growth temperature is 850-1000 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000,
Mg doping content is 1E17-1E18atom/cm3。
Invention additionally discloses the LED epitaxy junction of a kind of said method gained coupling AZO thin film current extending
Structure, including the Sapphire Substrate stacked gradually from the bottom up, low temperature GaN nucleating layer, high temperature GaN cushion,
U-shaped GaN layer, N-type GaN layer, multicycle mqw light emitting layer, p-type AlGaN layer, p-type GaN
Layer and AlGaN:Mg contact layer；
The growth thickness of described AlGaN:Mg contact layer is that the molar content of 5-20nm, Al component accounts for
1%-20%, Mg doping content is 1E19-1E21atom/cm3。
In above technical scheme preferably, the multicycle, mqw light emitting layer was by 5-15 cycle
InyGa1-yN/GaN trap builds structure composition, the In in a cycleyGa1-yN/GaN trap is built structure and is included a thickness
SQW In for 2-5nmyGa1-yN shell and thickness are the GaN barrier layer of 8-15nm, wherein
Y=0.1-0.3.
In above technical scheme preferably, the thickness of low temperature GaN nucleating layer is 20-40nm；High temperature GaN delays
The thickness rushing layer is 0.2-1um；The thickness of U-shaped GaN layer is 1-3um；The thickness of N-type GaN layer is
2-4um；The thickness of p-type AlGaN layer is 50-200nm；The thickness of p-type GaN layer is 100-800nm.
The technical scheme that the present invention provides has the advantages that
1, growth step of the present invention is simplified, it is simple to large-scale production.
2, the LED epitaxial structure of the coupling AZO thin film current extending that the present invention provides, by outside LED
Prolong last contact layer and be designed as AlGaN:Mg structure, thin to mate ZnO: Al (AZO) electrically conducting transparent
Film reduces contact resistance, thus reduces the running voltage of LED chip；
3, the LED epitaxial structure of the coupling AZO thin film current extending that the present invention provides, with GaN phase
Ratio, by regulation Al component, the barrier height that can make AlGaN with AZO thin-film material is poor lower, simultaneously
Semiconductor depletion region can be allowed to narrow at AlGaN contact layer heavy doping Mg, make carrier have more chance tunnelling,
To mate ZnO: Al (AZO) transparent conductive film current extending reduction contact resistance, thus reduce LED
The running voltage of chip, has saved the energy, reduces use cost.
In addition to objects, features and advantages described above, the present invention also has other purpose, feature
And advantage.Below with reference to accompanying drawings, the present invention is further detailed explanation.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
The accompanying drawing used is needed to be briefly described, it should be apparent that, drawings discussed below is only the present invention's
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained, wherein according to these accompanying drawings:
The structure of the LED epitaxial structure of the coupling AZO thin film current extending that Fig. 1 provides for the present invention is shown
It is intended to；
Fig. 2 is the voltage-contrast figure of the sample 1 of LED epitaxial structure, sample 2 and sample 3；
Fig. 3 is the luminance contrast figure of the sample 1 of LED epitaxial structure, sample 2 and sample 3；
In figure: 1, AlGaN:Mg contact layer, 2, p-type GaN layer, 3, p-type AlGaN layer, 4, many
Cycle mqw light emitting layer, 5, N-type GaN layer, 6, U-shaped GaN layer, 7, high temperature GaN cushion,
8, low temperature GaN nucleating layer, 9, Sapphire Substrate.
Detailed description of the invention
Below in conjunction with the accompanying drawing of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole enforcement
Example.
Referring to Fig. 1, the present invention uses VEECO long high brightness GaN-based LED extension in MOCVD next life
Sheet, specifically:
Use high-purity H2, high-purity N2, high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3
As N source, metal organic source trimethyl gallium (TMGa), metal organic source triethyl-gallium (TEGa),
Trimethyl indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminum source, and N type dopant is silane
(SiH4), P-type dopant is two cyclopentadienyl magnesium (Cp2Mg), substrate is sapphire, and reaction pressure is at 100torr
Between 1000torr.Concrete growth pattern is as follows:
S1, by Sapphire Substrate 9 at H2Annealing in atmosphere, clean substrate surface, temperature is
1050-1150℃；
Drop to 500-620 DEG C at a temperature of S2, general, be passed through NH3And TMGa, the low temperature that growth 20-40nm is thick
GaN nucleating layer 8, growth pressure is 400-650Torr, and V/III mol ratio is 500-3000；
After the growth of S3, low temperature GaN nucleating layer 8 terminates, stop being passed through TMGa, carry out in-situ annealing process,
Annealing temperature is increased to 1000-1100 DEG C, and annealing time is 5-10min；After annealing, temperature is regulated extremely
900-1050 DEG C, continuing to be passed through TMGa, epitaxial growth thickness is the high temperature GaN cushion 7 between 0.2-1um,
Growth pressure is 400-650Torr, and V/III mol ratio is 500-3000；
After the growth of S4, high temperature GaN cushion 7 terminates, it is passed through NH3And TMGa, growth thickness is 1-3um
The U-shaped GaN layer 6 of undoped, growth course temperature is 1050-1200 DEG C, and growth pressure is 100-500Torr,
V/III mol ratio is 300-3000；
After the growth of S5, U-shaped GaN layer 6 terminates, it is passed through NH3, TMGa and SiH4, first growth one layer is mixed
The N-type GaN layer 5 that miscellaneous concentration is stable, thickness is 2-4um, and growth temperature is 1050-1200 DEG C, growth pressure
Power is 100-600Torr, V/III mol ratio be 300-3000, Si doping content be 8E18-2E19atom/cm3；
After the growth of S6, N-type GaN layer 5 terminates, grow multicycle mqw light emitting layer 4, MO source used
For TEGa, TMIn and SiH4；Multicycle mqw light emitting layer 4 is by the In in 5-15 cycleyGa1-yN/GaN
Trap builds structure composition, wherein SQW InyGa1-yThe thickness of N (y=0.1-0.3) layer is 2-5nm, and growth temperature is
700-800 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 300-5000；Wherein barrier layer GaN
Thickness be 8-15nm, growth temperature is 800-950 DEG C, and growth pressure is 100-500Torr, V/III mole
Ratio is 300-5000, and barrier layer GaN carries out low concentration Si doping, and Si component is 0.5%-3%；
After the growth of S7, multicycle mqw light emitting layer 4 terminates, growth thickness is p-type AlGaN of 50-200nm
Layer 3, MO source used is TMAl, TMGa and Cp2Mg；Growth temperature is 900-1100 DEG C, during growth
Between be 3-10min, pressure is at 20-200Torr, and V/III mol ratio is 1000-20000, p-type AlGaN layer
The molar constituent that molar constituent is 10%-30%, Mg of Al be 0.05%-0.3%；
After the growth of S8, p-type AlGaN layer 3 terminates, growth P-type GaN layer 2, MO source used is TMGa
And Cp2Mg；Growth thickness is 100-800nm, and growth temperature is 850-1000 DEG C, and growth pressure is
100-500Torr, V/III mol ratio be 300-5000, Mg doping content be 1E17-1E18atom/cm3；
After the growth of S9, p-type GaN layer 2 terminates, growth thickness is the AlGaN:Mg contact layer 1 of 5-20nm,
MO source (the organic source of high pure metal) used is TMAl, TMGa, Cp2Mg；Growth temperature is 850-1050 DEG C,
Growth pressure is 100-500Torr, and V/III mol ratio is that 1000-5000, Al component is mixed at 1-20%, Mg
Miscellaneous concentration is 1E19-1E21atom/cm3；
After S10, epitaxial growth terminate, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas atmosphere
Carry out making annealing treatment 5-10min, be then down to room temperature, terminate growth；Epitaxial structure through over cleaning, deposition,
The Subsequent semiconductor processing technique such as photoetching and etching makes single small-size chips.
The core of the present invention is the 9th step (S9) growth, after high temperature p-type GaN layer has grown, raw
Long one layer of AlGaN:Mg contact layer replaces original GaN:Mg contact layer, because AlGaN compares GaN,
Can be by adjusting Al component so that it is poor lower with the barrier height of AZO thin-film material, simultaneously further through
Heavy doping Mg in AlGaN, allows semiconductor depletion region narrow, thus electronics has more chance tunnelling, with coupling
ZnO: Al (AZO) transparent conductive film current extending, reduces contact resistance, thus reduces LED
The running voltage of chip.
Growing method according to traditional LED prepares sample 1, and the contact layer of growth is Mg:GaN structure,
Parameter is shown in Table 1；Sample 2 prepared according to the methods of the invention and sample 3, the contact layer of growth is AlGaN:Mg
Structure, parameter refers to table 1, sample 2: the TMAl being passed through is that the molar content of 15sccm, Al component is
6%；Sample 3: the TMAl being passed through be the molar content of 30sccm, Al component be 12%.Sample 1, sample
Product 2 and other outer layer growth condition of sample 3 are just the same.
Table 1 traditional mode of production mode and the comparison sheet of growth pattern of the present invention
It is saturating that sample 1, sample 2 and sample 3 plate ZnO: Al (AZO) under identical front process conditions
Bright conductive film does current extending, sample grinding and cutting is become the most at identical conditions
The chip granule of 762 μ m 762 μm (30mil × 30mil), then sample 1, sample 2 and sample 3 are identical
150 crystal grain are each selected in position, under identical packaging technology, are packaged into white light LEDs.Then use
Integrating sphere is test sample 1, sample 2 and the photoelectric properties of sample 3 under the conditions of driving electric current 350mA.
Refer to Fig. 2, show that sample 2 relatively sample 1 driving voltage is reduced to from 3.4-3.5 from Fig. 2 data
3.25-3.3v, sample 3 relatively sample 1 driving voltage is reduced to 3.2-3.25v from 3.4-3.5, refers to Fig. 3,
Drawing sample 1 and sample 2 from Fig. 3 data, the brightness of sample 3 is more or less the same, all near 530mw.
The growing method that this patent provides can reduce AZO thin film and do the driving voltage of current extending.
The foregoing is only embodiments of the invention, not thereby limit the scope of patent protection of the present invention, all
It is the equivalent structure utilizing description of the invention and accompanying drawing content to be made or equivalence flow process conversion, directly or indirectly
It is used in other relevant technical field, is the most in like manner included in the scope of patent protection of the present invention.
Claims (9)
1. mating a growing method for the LED epitaxial structure of AZO thin film current extending, its feature exists
In, include successively processing Sapphire Substrate (9), growing low temperature GaN nucleating layer (8), growth high temperature GaN
Cushion (7), grow U-shaped GaN layer (6), growth N-type GaN layer (5), growth the multicycle amount
Sub-trap luminescent layer (4), growing P-type AlGaN layer (3), growth P-type GaN layer (2), growth AlGaN:Mg
Contact layer (1) and annealing；
Growth AlGaN:Mg contact layer (1) particularly as follows:
After p-type GaN layer (2) growth terminates, growth thickness is the AlGaN:Mg contact layer (1) of 5-20nm,
Wherein: MO source used is TMAl, TMGa, Cp2Mg；Growth temperature is 850 DEG C-1050 DEG C, growth
Pressure is 100-500Torr, and V/III mol ratio is that the molar content of 1000-5000, Al component accounts for 1%-20%,
Mg doping content is 1E19-1E21atom/cm3。
The life of the LED epitaxial structure of coupling AZO thin film current extending the most according to claim 1
Long method, it is characterised in that growth high temperature GaN cushion (7) particularly as follows:
After low temperature GaN nucleating layer (8) growth terminates, stop being passed through TMGa, carry out in-situ annealing process,
Annealing temperature is increased to 1000 DEG C-1100 DEG C, and annealing time is 5-10min；After annealing, temperature is regulated
To 900 DEG C-1050 DEG C, continuing to be passed through TMGa, epitaxial growth thickness is the high temperature GaN buffering of 0.2-1um
Layer (7), growth pressure is 400-650Torr, and V/III mol ratio is 500-3000.
The life of the LED epitaxial structure of coupling AZO thin film current extending the most according to claim 1
Long method, it is characterised in that grow U-shaped GaN layer (6) particularly as follows:
After high temperature GaN cushion (7) growth terminates, it is passed through NH3And TMGa, growth thickness is 1-3um
The U-shaped GaN layer (6) of undoped, wherein: growth temperature is 1050 DEG C-1200 DEG C, growth pressure is
100-500Torr, V/III mol ratio is 300-3000.
The life of the LED epitaxial structure of coupling AZO thin film current extending the most according to claim 1
Long method, it is characterised in that growth N-type GaN layer (5) particularly as follows:
After U-shaped GaN layer (6) growth terminates, it is passed through NH3, TMGa and SiH4, growth thickness is 2-4um
N-type GaN layer (5), growth temperature is 1050-1200 DEG C, and growth pressure is 100-600Torr, V/III
Mol ratio be the doping content of 300-3000, Si be 8E18-2E19atom/cm3。
The life of the LED epitaxial structure of coupling AZO thin film current extending the most according to claim 1
Long method, it is characterised in that growth multicycle mqw light emitting layer (4) particularly as follows:
After N-type GaN layer (5) growth terminates, growth multicycle mqw light emitting layer (4), MO used
Source is TEGa, TMIn and SiH4；
Multicycle mqw light emitting layer (4) is built structure by the InyGa1-yN/GaN trap in 5-15 cycle and is formed,
Wherein: SQW InyGa1-yThe thickness of N shell is 2-5nm, y=0.1-0.3；Growth temperature is 700-800 DEG C,
Growth pressure is 100-500Torr, and V/III mol ratio is 300-5000；The thickness of GaN barrier layer is 8-15nm,
Growth temperature is 800-950 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, Si
The molar content of component accounts for 0.5%-3%.
The life of the LED epitaxial structure of coupling AZO thin film current extending the most according to claim 1
Long method, it is characterised in that growth P-type GaN layer (2) particularly as follows:
After p-type AlGaN layer (3) growth terminates, growth thickness is the p-type GaN layer (2) of 100-800nm,
MO source used is TMGa and Cp2Mg；Growth temperature is 850-1000 DEG C, and growth pressure is 100-500Torr,
V/III mol ratio be 300-5000, Mg doping content be 1E17-1E18atom/cm3。
7. the LED of one kind such as claim 1-6 any one method gained coupling AZO thin film current extending
Epitaxial structure, it is characterised in that include Sapphire Substrate (9), the low temperature GaN stacked gradually from the bottom up
Nucleating layer (8), high temperature GaN cushion (7), U-shaped GaN layer (6), N-type GaN layer (5),
Multicycle mqw light emitting layer (4), p-type AlGaN layer (3), p-type GaN layer (2) and AlGaN:Mg
Contact layer (1)；
The molar content that growth thickness is 5-20nm, Al component of described AlGaN:Mg contact layer (1) accounts for
1%-20%, Mg doping content is 1E19-1E21atom/cm3。
The LED epitaxial structure of coupling AZO thin film current extending the most according to claim 7, its
Being characterised by, multicycle mqw light emitting layer (4) is by the In in 5-15 cycleyGa1-yN/GaN trap builds structure
Composition, the In in a cycleyGa1-yN/GaN trap is built structure and is included that a thickness is the SQW of 2-5nm
InyGa1-yN shell and thickness are the GaN barrier layer of 8-15nm, wherein y=0.1-0.3.
The LED epitaxial structure of coupling AZO thin film current extending the most according to claim 7, its
Being characterised by, the thickness of low temperature GaN nucleating layer (8) is 20-40nm；High temperature GaN cushion (7)
Thickness is 0.2-1um；The thickness of U-shaped GaN layer (6) is 1-3um；The thickness of N-type GaN layer (5)
For 2-4um；The thickness of p-type AlGaN layer (3) is 50-200nm；The thickness of p-type GaN layer (2) is
100-800nm。
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Cited By (3)
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| CN107195736A (en) * | 2017-05-27 | 2017-09-22 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN107768489A (en) * | 2017-10-16 | 2018-03-06 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
| CN107785464A (en) * | 2017-10-16 | 2018-03-09 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
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