CN105951049B - A kind of metallic particles manufacture method with nanoscale gap - Google Patents
A kind of metallic particles manufacture method with nanoscale gap Download PDFInfo
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- CN105951049B CN105951049B CN201610323258.4A CN201610323258A CN105951049B CN 105951049 B CN105951049 B CN 105951049B CN 201610323258 A CN201610323258 A CN 201610323258A CN 105951049 B CN105951049 B CN 105951049B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
Abstract
The invention discloses a kind of metallic particles manufacture method with nanoscale gap, the manufacturing cycle metallic particles first in elastic substrate, by the stretching to elastic substrate, change the spacing between adjacent metal particles on substrate, realize 10nm and following nano level metal gap.The manufacturing method of the present invention can also realize the dynamic tuning to optical modes such as structure transmission, reflection or absworption peaks by the regulation and control of the relative position to metallic particles array, and have the advantages that low cost, high efficiency, can be mass-produced while precision is high.
Description
Technical field
The present invention relates to a kind of manufacture method of metallic particles, and in particular to a kind of metallic particles with nanoscale gap
Manufacture method.
Background technology
Surface plasmons can make incident field local in the tip of metal nanoparticle or very little
In gap, this effect can be widely applied to the enhancing of nonlinear effect, Surface enhanced Raman scattering, Fluorescence Increasing, highly sensitive
Spend sensor etc..When two metal Nano structure spacing are close, it may occur that strong near-field coupling, between two particles
Gap in, field strength is greatly strengthened, this usual intensification factor can be more preferably more notable than the enhancing effect of individual particle.Gold
Spacing between metal nano-particle is smaller, and the multiple of enhanced intensity is bigger, therefore develops and have between nanoscale (10nm and following)
The metallic particles manufacturing technology of gap is particularly significant.
At present, the common method for preparing 10nm and following gap mainly has shadow deposition techniques, sacrificial layer technology etc..With reference to
Beamwriter lithography and shadow deposition silver, Theiss prepare spacing be 1nm Argent grain to array (Theiss, J.et al.,
Plasmonic Nanoparticle Arrays with Nanometer Separation for High-Performance
SERS Substrates.Nano Letters,2010.10(8):p.2749-2754.).But in shadow deposition techniques, deposition
During the diverging of metallic atom and the blocking for preparing precision problem, be easy to causeing nanoscale gap of deposition mas, thus institute
The poor accuracy of preparation structure, preparation difficulty is larger, poor repeatability；The ultra-thin oxygen that Im prepares technique for atomic layer deposition (ALD)
Change aluminium lamination be used as sacrifice layer, prepare width for 5~20nm continuous nano gap structure (Im, H.et al.,
Vertically Oriented Sub-10-nm Plasmonic Nanogap Arrays.Nano Letters,2010.10
(6):p.2231-2236.).But this method preparation process is complicated, and cost is higher.
In addition, after the structure of the overwhelming majority is prepared out at present, its optical property has also been fixed.Although these are fixed
Optical property can deal with the passive functions such as conduction, sensing and enhancing in integrated photonics, but in tuning, modulation, switch
It is helpless in terms of etc. active functions.
The content of the invention
In view of the above problems, the purpose that the present invention is is to provide a kind of metallic particles with nanoscale gap and its manufacture
Method, by there is the stretching of the elastic substrate of metal nanoparticle array to preparation, changes the week of metallic particles array on substrate
Phase, it is possible to achieve 10nm and following metal nano gap；In addition, in this approach, pass through the phase to metallic particles array
Regulation and control to position, can also realize the dynamic tuning to optical modes such as structure transmission, reflection or absworption peaks.This method has
There are low cost, high efficiency, can be mass-produced while the advantages of precision is high.
The object of the invention to solve the technical problems is realized using following technical scheme.
A kind of metal array manufacture method with nanoscale gap, it comprises the following steps：
Step 1：Prepare the elastic substrate with nanoscale flatness；
Step 2：The metallic particles of periodic arrangement is formed on the elastic substrate surface；
Step 3：Outwards apply pulling force respectively in the both sides of elastic substrate, then substrate is received on the direction perpendicular to pulling force
Contracting, correspondingly, on the direction perpendicular to pulling force metallic particles spacing reduce, under certain tensile elongation, metallic particles battle array away from
It is decreased to 10nm and following.
In step 1, the elastic substrate method for obtaining nanoscale flatness is：
Using the flat surface of material after polishing, elastic substrate presoma is mixed and is coated on material after the polishing
Surface, after being handled by bubble removing, the elastic substrate presoma is cured；
Then elastic substrate is cut into the size of needs, and removed from the surface of material after the polishing.Then with it is described
The elastic substrate surface of material surface contact has nanoscale flatness after polishing.
Optionally, presoma is being mixed and is being coated on after the polishing before the surface of material, further included：In the throwing
After light the step of the adsorption releasing agent of material.
Preferably, the elastic substrate is dimethyl silicone polymer (PDMS), obtains the elastic substrate of nanoscale flatness
Method is：Using the flat surface of silicon chip after polishing, the presoma for preparing PDMS (including main body and curing agent) is mixed and stirred
Mix uniformly, be then coated with silicon chip surface, by the way that after being vacuumized in vacuum ware and removing bubble, PDMS presomas will be coated with
Silicon chip is positioned over oven for baking to curing；
Then, elastic substrate is cut into the size of needs, and is removed from silicon chip surface, is obtained with nanoscale flatness
PDMS substrates.Wherein, baking temperature is preferably 60-80 DEG C, baking time be preferably less than 2.5 it is small when, during long baking
Between or heating-up temperature can reduce the elasticity of PDMS, cause drawing effect to reduce.
In step 2, the metallic particles that elastic substrate surface forms periodic arrangement can be realized according to following steps：
21) processing is being modified to the elastic substrate surface, it is hydrophily to make its surface；
22) elastic substrate surface coating photoresist after modification, carries out baking processing, then utilizes laser interference exposure
And development, form hole array on photoresist surface；
23) in above-mentioned sample surfaces, metallic film is prepared using magnetron sputtering；
24) stripping photoresist and the metal layer of its upper part, form the metallic particles array in elastic substrate.
In step 21), since elastic substrate surface is usually hydrophobicity, it is therefore desirable to which modification is to prepare uniform thickness
Photoresist film.
Preferably, using plasma etching is modified processing, and etch period should be controlled in OK range, during etching
Between it is too short cause hydrophily bad, it is and in uneven thickness in photoresist prepared above；Etch period is long, is easy to cause elasticity
Substrate surface elasticity reduces, and reduces drawing effect.Preferably, using oxygen plasma etch, etching power is 300-600W, oxygen
Throughput is 40-90sccm, etch period 20-60s.
In step 22), it is preferred that photoresist thickness is 100-600nm.
Optionally, laser interference exposure can take double light beam laser interference exposure or multi-beam laser interference exposure, be formed
Hole array, it is different by the condition of laser interference exposure and change.
In step 23), after the magnetron sputtering prepares metallic film step, it can also include：Evaporation prepares metal
The step of film.
It is worth noting that, elastic substrate Surface hardened layer and reducing effect, preparation connect with elastic substrate surface in order to prevent
Tactile metallic film need to use magnetron sputtering, optionally thicken metal thickness using evaporation after magnetron sputtering.If
,, will when the metallic atom being evaporated directly reaches elastic substrate surface since melting point metal is higher when directly using method of evaporating
Cause elastic substrate Surface hardened layer, so that when being stretched to greater depth, elastic substrate most top layer is broken, so as to cannot have
Effect regulates and controls metal nanoparticle to nanoscale gap.
Metallic film material can be the noble metal such as golden, silver-colored, aluminium, copper.
Preferably, thickness of metal film 10-200nm.
In step 24), peeled off using ultrasound or metal Splitting method is peeled off.Before stripping, sample is in acetone or alcohol equal solvent
Middle immersion.
By above-mentioned technical proposal, the invention has the advantages that and beneficial effect：
1) compared with prior art, the application proposes to prepare the gold of nanoscale gap using the method to elastic substrate stretching
Belong to array, the micro-scale of Nano grade can be regulated and controled to be converted into the other macro-scale of grade using the program regulates and controls；
2) at the same time, by the regulation and control of the relative position to metallic particles array, can also realize to structure transmission, reflection
Or the dynamic tuning of the optical mode such as absworption peak.This method has the advantages that low cost, high efficiency, can be mass-produced；
3) in preparation scheme, using directly laser interference exposure is carried out on elastic substrate surface, preparation process, drop are simplified
Low manufacturing cost；Metallic film is prepared using magnetron sputtering, prevents elastic substrate Surface hardened layer.
Brief description of the drawings
Fig. 1 is to prepare gold thin film, PDMS top layers slight crack scanning electron microscope (SEM) photograph after stretching using method of evaporating.
Fig. 2 is one step 2 schematic diagram of the embodiment of the present application.
Fig. 3 is one step 3 schematic diagram of the embodiment of the present application.
Fig. 4 is one step 4 schematic diagram of the embodiment of the present application.
Fig. 5 is one step 5 schematic diagram of the embodiment of the present application.
Fig. 6 is one step 6 schematic diagram of the embodiment of the present application.
Fig. 7 show the top view of Fig. 6.
Fig. 8 show sample top view after stretching.
It is respectively the scanning electron microscope (SEM) photograph that draw ratio is 0%, 40%, 80% and 100% shown in Fig. 9 (a) -9 (d).
Fig. 9 (e) is the scanning electron microscope (SEM) photograph that adjacent discs gap is below 10nm.
Fig. 9 (f) is scanning electron microscope (SEM) photograph when adjacent discs contact.
Figure 10 is transmitted light spectrogram when draw ratio R is 0%, 20%, 40%, 60%, 80% and 100%.
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, with reference to the application specific embodiment and
Technical scheme is explicitly described in corresponding attached drawing.
Embodiment one
By taking double light beam laser interference exposure prepares tetragonal lattice array gold disk as an example, specific manufacturing process is described.According to
It is actually needed, the array of multi-beam laser interference exposure or other cycles and the arrangement of non-tetragonal lattice can be selected.
The embodiment of the present invention one comprises the following steps：
Step 1：Prepare the PDMS substrates with nanoscale flatness.
First, the silicon chip after polishing and releasing agent are positioned in same drying basin, vacuumize rear closed preservation 10min,
Make releasing agent Molecular Adsorption in silicon chip surface；Then, by prepare PDMS elastic substrates main body and curing agent according to 10:1 mass
It is more uniform than being mixed and stirred for, by it coated on the silicon chip surface after polishing；The silicon chip of main body and curing agent mixture will be coated
Be positioned in vacuum ware and vacuumize 30min to remove bubble, be positioned over afterwards 70 DEG C of oven for baking cure 1.5 it is small when；Finally
Elastic substrate is cut into 2.5cm × 2.5cm, and is removed from silicon chip surface.Fig. 1 show thin using method of evaporating preparation gold
, there is slight crack after stretching on PDMS most top layers in film.
Step 2：Oxygen plasma etch is carried out to PDMS substrate surfaces, etching power is 500W, and oxygen flow is
60sccm, etch period 30s, makes its surface be changed to hydrophily by hydrophobicity, the PDMS substrates 21 after being etched, such as Fig. 2
It is shown；
Step 3：21 surface spin coating photoresist 31 of PDMS substrates after etching, as shown in figure 3, spin coating speed is 2000
Rev/min, the time is 35 seconds；After spin coating is complete, sample is heated 1.5 minutes on 95 DEG C of hot plates；
Step 4：Two-beam interference exposure orthogonal twice is carried out to the sample of the good photoresist of spin coating, herein exposure cycle
For 600nm.After development, the photoresist hole array 41 of tetragonal lattice arrangement is obtained, as shown in Figure 4.Can be by adjusting spin coating light
The thickness of photoresist film prepares the photoresist hole array of different height；Change the size in hole by adjusting the exposed and developed time.
Step 5：In above-mentioned sample surfaces, the gold thin film that thickness is 20nm is prepared using magnetron sputtering, as shown in Figure 5.Cause
Surface forms gold thin film 51 on a photoresist for this, and 21 surface of PDMS substrates after etching forms gold thin film 52, and photoresist
Side wall is likely to form side wall gold thin film (being not drawn into figure)；
Step 6：The sample for having sputtered gold thin film is put into ethanol and soaks 10min, and then ultrasound peels off photoresist, gold
Film 51 and side wall gold thin film, gold thin film 52 remain in substrate, obtain structure as shown in Figure 6；Fig. 7 show Fig. 6's
Top view.A diameter of 460nm of the gold thin film 52 prepared in the present embodiment.
Step 7：Apply external force according to the direction of arrow shown in Fig. 8, stretch the both sides of PDMS substrates, then perpendicular to external force
Direction on substrate contracts, correspondingly, rosette array pitch reduce, can be by golden disk battle array by restrained stretching length
Column pitch is decreased to 10nm and following, and Fig. 8 show sample top view after stretching.
Level of stretch for convenience of description to elastic substrate, defines draw ratio：
Wherein, L0It is the original length of elastic substrate, L is the length after elastic substrate stretching.
Fig. 9 (a) -9 (f) show the Sample Scan electron microscope prepared according to the embodiment concrete scheme.
Fig. 9 (a), which is shown, to be prepared on PDMS substrates, golden disk cycle 600nm, and golden disk diameter is 460nm, golden disk
The tetragonal lattice array of thickness 20nm is when non-stretched, i.e., scanning electron microscope (SEM) photograph when draw ratio is 0%, wherein, engineer's scale length
For 500nm.
It is respectively the scanning electron microscope (SEM) photograph that draw ratio is 40%, 80% and 100% shown in Fig. 9 (b) -9 (d), wherein, engineer's scale
Length is 500nm.Be clear that increases with draw ratio, and golden array of discs is shortened in the direction spacing perpendicular to external force,
When draw ratio is 100%, the gap between adjacent discs can be reduced to 10nm.Further increase draw ratio, disk can be made
Gap is reduced to below 10nm or even contacts.
Fig. 9 (e) show the scanning electron microscope (SEM) photograph that adjacent discs gap is below 10nm, and Fig. 9 (f) show adjacent discs and connects
Scanning electron microscope (SEM) photograph when touching.
In addition, pass through restrained stretching length, it is possible to achieve the regulation and control to the relative position of metallic particles, so as to the structure
Optical mode carry out dynamic tuning.
This sentences sample prepared by embodiment 1 and is illustrated exemplified by the transmission spectrum under the conditions of different stretch ratio.
Figure 10 show transmitted spectrum when draw ratio is 0%, 20%, 40%, 60%, 80% and 100%.Shown in arrow
The transmission paddy at place produces for the local surface phasmon of the intergranular dipole vibration induction of disk.As can be seen that with stretching
The increase of ratio, i.e. with the reduction of disk spacing, notable red shift occurs for the transmission paddy that dipole concussion produces.Therefore by right
The tensile elongation control of elastic substrate, can regulate and control the local surface phasmon wavelength that induction produces.
The above described is only a preferred embodiment of the present invention, not make limitation in any form to the present invention, therefore
It is every without departing from technical solution of the present invention content, what the technical spirit according to the present invention made above example any simply repaiies
Change, equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (8)
1. a kind of metallic particles manufacture method with nanoscale gap, it is characterised in that comprise the following steps：
Step 1, prepares the elastic substrate with nanoscale flatness；
Step 2, the metallic particles of periodic arrangement is formed on the elastic substrate surface；
Step 3, outwards applies pulling force, the metallic particles spacing on the direction perpendicular to pulling force respectively in the both sides of elastic substrate
Reduce, under certain tensile elongation, adjacent metal particles spacing is decreased to below 10nm on the direction perpendicular to pulling force；
Wherein, step 2, the method that the metallic particles of periodic arrangement is formed on the elastic substrate surface are：
21) processing is modified using oxygen plasma etch to the elastic substrate surface, etching power is 300-600W, oxygen
Throughput is 40-90sccm, etch period 20-60s；
22) elastic substrate surface coating photoresist after modification, carries out baking processing, then utilizes laser interference exposure and aobvious
Shadow, hole array is formed on photoresist surface；
23) sample surfaces obtained in step 22), metallic film is prepared using magnetron sputtering；
24) stripping photoresist and the metal layer on photoresist top, form the metallic particles of the periodic arrangement on elastic substrate surface.
2. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 1, it is characterised in that：The elasticity lining
Bottom is dimethyl silicone polymer；Obtain nanoscale flatness elastic substrate method be：
11) using the flat surface of silicon chip after polishing, the presoma for preparing dimethyl silicone polymer is mixed and stirred for uniformly, so
Afterwards coated on silicon chip surface after polishing, by the way that after being vacuumized in vacuum ware and removing bubble, dimethyl silicone polymer will be coated with
The silicon chip of presoma is positioned over oven for baking to curing；The presoma includes main body and curing agent；
12) size of needs and then by elastic substrate is cut into, and is removed from silicon chip surface, obtains that there is nanoscale flatness
Dimethyl silicone polymer substrate.
3. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 2, it is characterised in that：In step 11),
Before presoma is mixed and is coated on the silicon chip surface, the step of the adsorption releasing agent of silicon chip after a polish is further included
Suddenly.
4. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 1, it is characterised in that：In step 22),
The laser interference exposure exposes for double light beam laser interference exposure or multi-beam laser interference, the hole array of formation, by laser
Interfere the condition of exposure different and change；The photoresist thickness is 100-600nm.
5. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 1, it is characterised in that：In step 23),
After metallic film is prepared using magnetron sputtering, the step of evaporation thickeies metallic film is further included.
6. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 5, it is characterised in that：The metal foil
Membrane material is gold, silver, aluminium or copper；The thickness of metal film is 10-200nm.
7. there is the metallic particles manufacture method of nanoscale gap as claimed in claim 1, it is characterised in that：In step 24),
Peeled off using ultrasound or metal Splitting method is peeled off；Before stripping, sample soaks in acetone or alcohol solvent.
A kind of 8. metallic particles with nanoscale gap, it is characterised in that：According to any one of claim 1 to 7
Metallic particles prepared by method.
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| CN104614947A (en) * | 2015-01-26 | 2015-05-13 | 天津大学 | Flexible, stretchable and deformable curved surface optical lithography template as well as optical lithography method and device |
| CN104746049A (en) * | 2015-04-07 | 2015-07-01 | 南京大学 | Method for preparing surface-enhanced Raman scattering base with metal nanometer gaps by utilizing ALD (atomic layer deposition) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108528078B (en) * | 2018-04-11 | 2021-03-30 | 中山大学 | Nanostructure transfer printing method and method for preparing multilayer nanostructure by using stacking method |
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