CN105939554B - LED light modulating devices and LED drive power - Google Patents

LED light modulating devices and LED drive power Download PDF

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Publication number
CN105939554B
CN105939554B CN201610393667.1A CN201610393667A CN105939554B CN 105939554 B CN105939554 B CN 105939554B CN 201610393667 A CN201610393667 A CN 201610393667A CN 105939554 B CN105939554 B CN 105939554B
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circuit
signal
bus
led light
input
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CN105939554A (en
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叶美盼
蔡拥军
吴建兴
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Hangzhou Silan Microelectronics Co Ltd
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Hangzhou Silan Microelectronics Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/37Converter circuits
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Led Devices (AREA)

Abstract

A kind of LED light modulating devices and a kind of LED drive power are separated.The LED light modulating devices include:Bypass circuit and decoupling circuit, DC bus-bar voltage described in the bypass circuit produces first control signal, first control signal is used to control bypass impedance when conducting state and the conducting of the bypass circuit, when the bypass circuit turns on, the DC bus-bar voltage is grounded via the primary current path of the bypass circuit, the decoupling circuit is according to first control signal and the current detection signal, light modulation data-signal is parsed from DC bus-bar voltage, and the pulse-width signal is produced according to the light modulation data-signal.The LED light modulating devices utilize power carrier signal transmission light modulation data.Due to the module independently of main power circuit, the LED light modulating devices can be easily added in existing LED drive power.

Description

LED light modulating devices and LED drive power
Technical field
The present invention relates to light source control technology, more particularly, to light emitting diode (LED) light modulating device.
Background technology
When LED is used for lighting field, use LED light modulating devices regulation brightness with meet the individual demand of user or Need to dim according to environment to reduce energy consumption.LED light modulating devices are, for example, traditional controllable silicon dimmer.However, thyristor regulating There is the problem of maintaining Current compliance to differ in light device, and the product of every country, each brand easily goes out there is also difference The problem of existing light modulator compatibility.In addition, phenomena such as flicker is there is also in dimming process.
A kind of existing LED drive power 100 includes rectifier bridge 101, EMI filter circuit 102, circuit for power conversion 103, As shown in Figure 1.The driving power 100 obtains alternating current from external power source 110, and then rectified and filtering obtains DC voltage, The DC voltage is depressured to produce output current, so as to drive external loading 120, such as LED.
Further improved LED drive power 200 includes rectifier bridge 202, EMI filter circuit 203, circuit for power conversion 208 and LED light modulating devices, as shown in Figure 2.The LED light modulating devices include bypass circuit 204, zero cross detection circuit 205, number According to sample circuit 206, MCU module 207.The LED light modulating devices can transmit data by data resolution module, in the absence of compatibility The problem of property, controllable silicon dimmer can be substituted, be also advantageously integrated wireless communication module, the advantages that easily realizing intelligent dimming.
However, compared with existing LED drive power, the LED light modulating devices in LED drive power 200 cause in PCB cloth Office's upward wiring can be complicated many than originally, and component can also become more, and the space of cloth version also can be more much larger than original.
Accordingly, it is desired to provide LED light modulating devices and the LED drivings of a kind of PCB layouts of existing LED drive power of compatibility Power supply.
The content of the invention
In view of this, it is an object of the invention to provide one kind easily to be added in existing LED drive power The LED light modulating devices of dimming function, so as to avoid the redesign that PCB is laid out, to reduce use cost and be easy to promote.
According to an aspect of the present invention, there is provided a kind of LED light modulating devices, wherein, including:Bypass circuit, the bypass electricity Road has the first input end for being used to receive DC bus-bar voltage, the second input for receiving the second control signal, is used for First output end of the first control signal and the second output end for providing current detection signal, and decoupling electricity are provided Road, the decoupling circuit have the first input end for being used to receive DC bus-bar voltage, for receive the first control signal the Two inputs, the 3rd input for receiving current detection signal, the first output end for providing pulse-width signal, with And for providing the second output end of the second control signal, wherein, the bypass circuit produces according to the DC bus-bar voltage First control signal, first control signal are used for the conducting state for controlling the bypass circuit, in the bypass electricity When road turns on, the DC bus-bar voltage is grounded via the primary current path of the bypass circuit, the current detection signal table The electric current flowed through in the primary current path is levied, the decoupling circuit is believed according to first control signal and the current detecting Number, light modulation data-signal is parsed from DC bus-bar voltage, and the pulsewidth is produced according to the light modulation data-signal and adjusted Signal processed.
Preferably, the decoupling circuit works asynchronously with the bypass circuit.
Preferably, impedance of the bypass circuit in conducting changes according to first control signal.
Preferably, in addition to power supply circuit, the power supply circuit have the first input for receiving DC bus-bar voltage End, the second input for ground connection and the output end for providing stable supply voltage.
Preferably, the bypass circuit also includes:Pass gate control circuit, the pass gate control circuit have defeated Enter end and output end, the pass gate control circuit receives DC bus-bar voltage in input, by the DC bus-bar voltage Compared with the first reference voltage, to produce first control signal, and in output end offer first control signal; And the first metal-oxide-semiconductor, first resistor and second resistance between the first input end and ground of the bypass circuit are connected in series in, Wherein, the output end of the pass gate control circuit connects the control terminal of the first metal-oxide-semiconductor, so as to the first control signal control Make the ON time of the first metal-oxide-semiconductor, it is first defeated to be connected to the bypass circuit for the output end of the pass gate control circuit Go out end, so as to provide first control signal, the middle node of the first resistor and second resistance in first output end Point is connected to the second output end of the bypass circuit, so as to provide the current detection signal in second output end.
Preferably, the bypass circuit also includes:Second metal-oxide-semiconductor, it is connected in the first resistor and second resistance Between intermediate node and ground;And 3rd resistor, it is connected to the control of the second input and second metal-oxide-semiconductor of the bypass circuit Between end processed, wherein, second metal-oxide-semiconductor is under the control of second control signal, at least in first control signal High period between a period in it is in the conduction state, so as to be the LED light modulations dress in one period Put the dimmer powered of outside.
Preferably, the bypass circuit also includes:Bypass overpower-protection circuit, the bypass overpower-protection circuit tool There are input and output end, the bypass overpower-protection circuit receives DC bus-bar voltage in input, according to dc bus The height of voltage produces different earth impedance, and provides the earth impedance in output end, wherein, when the dc bus When voltage is higher than predetermined value, Low ESR over the ground is presented in the bypass overpower-protection circuit, so as to drag down second metal-oxide-semiconductor Terminal voltage is controlled, prevents the second metal-oxide-semiconductor from misleading, to protect the first metal-oxide-semiconductor.
Preferably, the decoupling circuit also includes:Hysteresis comparator module, the hysteresis comparator module are defeated with first Enter end, the second input and output end, the hysteresis comparator module receives the second reference voltage in first input end, second Input receives the DC bus-bar voltage or the superposed signal of the DC bus-bar voltage and DC bias signal, by described in DC bus-bar voltage is converted to analog signal and obtains the light modulation data-signal from the analog signal, and is provided in output end The light modulation data-signal;And data resolution module, the data resolution module have first input end and the first output end, The data resolution module receives the light modulation data-signal in the first input end, is obtained according to the light modulation data-signal Light modulation data provide the pulse-width signal to produce the pulse-width signal in first output end.
Preferably, the data resolution module parses when first control signal is effective, produces the pulsewidth modulation Signal.
Preferably, the hysteresis comparator module includes:High-pass filter, the high-pass filter prevent the direct current female The power frequency component of line voltage is by the way that the high-frequency signal for only allowing to modulate on the DC bus-bar voltage passes through;And first ratio Compared with device, the first comparator is used to compare the high-frequency signal with the second reference voltage, to produce the light modulation data Signal.
Preferably, the decoupling circuit also includes:Phase detecting module, the phase detecting module have the first input End, the second input and the 3rd input, and the first output end and the second output end, the phase detecting module is respectively in institute State first input end, second input and the 3rd input and receive the current detection signal, the power supply respectively Voltage and first control signal, synchronizing signal is produced according to first control signal, and in second output end The synchronizing signal is provided, wherein, the data resolution module also has the second input and the 3rd input, receives institute respectively Zero passage detection signal and the synchronizing signal are stated, and performs corresponding interrupt and controls.
Preferably, the phase detecting module obtains zero passage detection signal according to the current detection signal, and in institute State the first output end and the zero passage detection signal is provided.
Preferably, the DC bus-bar voltage is DC pulse moving voltage, during the bypass circuit turns on, using described The ascent stage of DC bus-bar voltage is the dimmer powered outside the LED light modulating devices, utilizes the DC bus-bar voltage Decline stage for the LED light modulating devices self transmission dim data, and the bypass circuit disconnect during, utilize institute The interstage for stating DC bus-bar voltage is the LED load transimission power outside the LED light modulating devices.
Preferably, at least some components of the bypass circuit, the decoupling circuit and the power supply circuit are integrated In a chip.
According to another aspect of the present invention, there is provided a kind of LED drive power, for the exchange for providing external ac power source Input voltage is converted into VD, with the LED load outside driving, wherein, the LED drive power includes:Main electricity Source circuit, the main power circuit are connected between external ac power source and LED load;And LED light modulation dresses described above Put, wherein, the LED light modulating devices are connected with the main power circuit to control the output current of main power circuit.
Preferably, the main power circuit includes:Rectifier bridge, for AC-input voltage to be converted into DC pulse electricity Pressure, as DC bus-bar voltage;Circuit for power conversion, for changing DC bus-bar voltage under the control of pulse-width signal Into VD;EMI filter circuit, it is connected between rectifier bridge and circuit for power conversion, for preventing power conversion electricity High-frequency noise caused by road disturbs, wherein, the LED light modulating devices be connected to the rectifier bridge and the EMI filter circuit it Between, and provide pulse-width control signal for the circuit for power conversion.
Preferably, in addition to diode, the diode are connected to the LED light modulating devices and the EMI filter circuit Between, and prevent high-frequency noise and low frequency to make an uproar together with EMI filter circuit along sense of current forward bias, the diode Sound is sent to LED light modulating devices from circuit for power conversion.
In LED drive power according to embodiments of the present invention, LED light modulating devices are in different periods, respectively outside Light modulator charging, for outside LED load and transmission light modulation data-signal.Due to light modulator need not set it is independent Power supply, thus the size of light modulator can be reduced.
Further, LED light modulating devices parse light modulation data according to power carrier signal, and are produced using light modulation data Pwm signal.Because light modulator and LED light modulating devices need not use the radio communication devices such as infrared, bluetooth, thus can reduce Light modulator and the LED light modulating devices costs of itself, and interference of the environmental condition to brightness adjustment control can be avoided.
Further, LED light modulating devices are independently of the module of main power circuit, thus can be easily in existing LED Intelligent dimming function is added in driving power.LED light modulating devices can be just placed on one piece of extra platelet using the present invention, Then it is inserted in existing LED drive power, connects three nodes, can be achieved with intelligent dimming.And each piece of plank member device Part is seldom, and PCB fabric swatch can become simple a lot, be advantageous to the popularization of the program.
Further, between LED light modulating devices and EMI filter circuit, set on supply lines along the sense of current just To the diode of biasing.
On the equidirectional of electric current, diode forward biasing, it is allowed to which DC bus-bar voltage passes through.In the phase negative side of electric current Upwards, the diode reverse biased, reverse electric signal transmission is prevented.Therefore, diode can hinder together with EMI filter circuit Only high-frequency noise and low-frequency noise are sent to external ac power source or LED light modulating devices from circuit for power conversion.Diode prevents High-frequency noise and low-frequency noise cause LED light modulating devices to malfunction caused by main switch switching in circuit for power conversion.
Brief description of the drawings
By the description to the embodiment of the present invention referring to the drawings, above-mentioned and other purposes of the invention, feature and Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the circuit block diagram of existing LED drive power.
Fig. 2 is the circuit block diagram of the existing LED drive power with light modulating device.
Fig. 3 is the circuit block diagram of LED drive power according to embodiments of the present invention.
Fig. 4 is the schematic circuit of the LED light modulating devices in Fig. 3.
Fig. 5 a and 5b are two kinds of implementations of the pass gate control circuit in Fig. 4.
Fig. 6 is bypass overpower-protection circuit implementation.
Fig. 7 a and 7b are the waveform that metal-oxide-semiconductor Q4 misleads when taking place without overpower protection and having an overpower protection respectively Figure.
Fig. 8 is hysteresis comparator Module implementations.
Fig. 9 is the decoupling oscillogram of hysteresis comparator module.
Figure 10 is phase detecting module implementation.
Figure 11 is the oscillogram of DC bus-bar voltage, bypass driving and zero passage detection.
Figure 12 is pin layout's schematic diagram when LED light modulating devices in Fig. 4 are integrated in a chip.
Embodiment
The present invention is more fully described hereinafter with reference to accompanying drawing.In various figures, identical element is using similar attached Icon is remembered to represent.For the sake of clarity, the various pieces in accompanying drawing are not necessarily to scale.Furthermore, it is possible to it is not shown some Known part.
It describe hereinafter many specific details of the present invention, such as the structure of device, material, size, processing work Skill and technology, to be more clearly understood that the present invention.But just as the skilled person will understand, it can not press The present invention is realized according to these specific details.
The present invention can be presented in a variety of manners, some of examples explained below.
Fig. 3 is the circuit block diagram of LED drive power according to embodiments of the present invention.The LED drive power 300 is via light modulation Device 130 receives AC-input voltage from the AC power 110 of outside, and the AC-input voltage is converted into direct current output Voltage, so as to drive external loading 120, such as LED.
LED drive power 300 includes rectifier bridge 301, EMI filter circuit 302, circuit for power conversion 303 and LED and adjusted Electro-optical device 309.Wherein, rectifier bridge 301, EMI filter circuit 302, circuit for power conversion 303 form main power circuit together.
Rectifier bridge 301 is, for example, full bridge rectifier, for AC-input voltage to be rectified into DC bus-bar voltage Vh.It is whole The first output end for flowing bridge 301 is hot end, and the second output end is cold end.Second output end is for example grounded.Power Change-over circuit 303 is, for example, the FLY-BACK type power inverters for including main switch, for being carried out to DC bus-bar voltage Vh Decompression, to obtain VD.As shown in figure 3, the first output end and power conversion electricity of supply lines connection rectifier bridge 301 The first input end on road 303, for providing DC bus-bar voltage Vh for subsequent conditioning circuit, ground wire connects the second of rectifier bridge 301 Second input of output end and circuit for power conversion 303.
LED light modulating devices 309 are connected between two output ends of rectifier bridge 301.In LED light modulating devices 309 and power Between change-over circuit 303, diode D and electromagnetic interference (EMI) filter circuit 302 are also associated with.In this embodiment, LED is adjusted Electro-optical device 309, diode D and EMI filter circuit 302 are connected in turn between rectifier bridge 301 and circuit for power conversion 303.
EMI filter circuit 302 is, for example, the low pass filter being made up of inductance and electric capacity, so as to allow DC bus-bar voltage Vh is provided to circuit for power conversion 303 from rectifier bridge 301, while is also prevented from High-frequency Interference noise and is passed from circuit for power conversion 303 Deliver to external ac power source 300 or LED light modulating devices 309.
LED light modulating devices 309 provide pulsewidth modulation (PWM) signal PWM1 for the circuit for power conversion, for for power Main switch in change-over circuit 303 provides control signal, so as to control output by changing pwm signal PWM1 dutycycle The size of electric current, to adjust the brightness of LED 120.
It is different from the existing LED drive power 200 shown in Fig. 2, in LED drive power 300 according to embodiments of the present invention, LED light modulating devices 309 charge in different periods, respectively outside light modulator 130, are outside LED load, Yi Jichuan Defeated light modulation data-signal.
Further, LED light modulating devices 309 parse light modulation data according to power carrier signal, and using light modulation data Produce pwm signal PWM1.
Further, LED light modulating devices 309 are independently of the module of main power circuit, thus can be easily existing Intelligent dimming function is added in LED drive power.
Further, between LED light modulating devices 309 and EMI filter circuit 302, set on supply lines along electric current The diode D of direction forward bias.
Fig. 4 is the schematic circuit of the LED light modulating devices in Fig. 3.LED light modulating devices 309 are whole including being respectively connecting to Flow power supply circuit 306, bypass circuit 307 and the decoupling circuit 308 of the output end of bridge 301.
Power supply circuit 306 is a stable voltage source, for producing such as 3.3V confession according to DC bus-bar voltage Vh Piezoelectric voltage, and it is supplied to decoupling circuit 308.Power supply circuit 306 can have two kinds of implementations, and one kind is high-voltage linear decompression Module, another kind are switch power modules.
It is (that is, golden that bypass circuit 307 includes pass gate control circuit 310, bypass overpower-protection circuit 311, metal-oxide-semiconductor Belong to oxide semiconductor field effect transistor) Q2, metal-oxide-semiconductor Q4, resistance R10, R11, R16.
Metal-oxide-semiconductor Q2, resistance R10 and R11 are connected in series between supply lines and ground.Metal-oxide-semiconductor Q4 is in parallel with resistance R11 even Connect.Obtained in resistance R10 and R11 intermediate node and characterize the current detection signal Vs for flowing through metal-oxide-semiconductor Q2.
Pass gate control circuit 310 is connected to metal-oxide-semiconductor Q2 grid, and produces the first control signal DR2, with control Metal-oxide-semiconductor Q2 conducting state.Decoupling circuit 308 produces the second control signal Vcharge, and is controlled via resistance R16 by second Signal Vcharge processed is provided to metal-oxide-semiconductor Q4 grid, to control metal-oxide-semiconductor Q4 conducting state.
Bypass overpower-protection circuit 311 is connected between metal-oxide-semiconductor Q4 grid and ground, is changed according to DC bus-bar voltage Vh Become the earth impedance of metal-oxide-semiconductor Q4 grid.
Furthermore, pass gate control circuit 310 produces the first control signal according to DC bus-bar voltage Vh height DR2, such as square-wave signal.Metal-oxide-semiconductor Q2 conductings when square wave is high, metal-oxide-semiconductor Q2 disconnects when square wave is low.
Furthermore, when metal-oxide-semiconductor Q2 grid voltage disconnects for high and metal-oxide-semiconductor Q4, light modulator 130, rectifier bridge 301st, metal-oxide-semiconductor Q2, resistance R10, resistance R11 are with regard to that can form path.Select resistance R10 and R11 impedance so that resistance R10's Impedance is smaller, and resistance R11 impedance is larger.Therefore, the electric current for flowing through metal-oxide-semiconductor Q2 determines by resistance R11, electric current now compared with It is small.When metal-oxide-semiconductor Q2 grid voltage turns on for high and metal-oxide-semiconductor Q4, light modulator 130, rectifier bridge 301, metal-oxide-semiconductor Q2, resistance R10, metal-oxide-semiconductor Q4 are with regard to that can form path.The electric current for flowing through metal-oxide-semiconductor Q2 is larger.The electric current provides charging for outside light modulator 130 Electric current.Size of current is determined by the impedance of light modulator 130.Now, DC bus-bar voltage Vh is substantially at the both ends of light modulator 130 Voltage drop, so as to power for light modulator 130.
Furthermore, bypass overpower-protection circuit 311 according to DC bus-bar voltage Vh height produce it is different over the ground Impedance.When DC bus-bar voltage Vh is sufficiently high, earth impedance will very little, resistance R16 and bypass overpower-protection circuit 311 divide Pressure, metal-oxide-semiconductor Q4 grid voltage can be very low, Q2 is undertaken high pressure and high current damage so as to prevent metal-oxide-semiconductor Q4 from misleading.
Decoupling circuit 308 includes hysteresis comparator module 312, the phase detecting module powered respectively by power supply circuit 306 313rd, data resolution module U2.In this example, data resolution module U2 is single-chip microcomputer.
Hysteresis comparator module 312 receives DC bus-bar voltage Vh, and the power line carrier by sine wave from supply lines Signal is converted into square-wave signal.
Phase detecting module 313 receives the first control signal DR2 and current detection signal Vs from bypass circuit 307, and Produce first phase signal INT0 and second phase signal INT1.
Data resolution module U2 receives square-wave signal, first phase signal INT0 and second phase signal INT1.Data solution Analyse module U2 and light modulator transmission data are parsed according to square-wave signal, so as to produce different pwm signals, adjust LED output currents Size.When parsing light modulator transmission data, data resolution module U2 is according to first phase signal INT0 and second phase signal INT1 confirms the phase of parsing data.
The demand dimmed according to LED, data resolution module U2 can provide multi-channel PWM signal, to control multi-way LED lamp Light modulation.In addition, data resolution module U2 also produces the second control signal Vcharge and is supplied to bypass module 307.
Fig. 5 a and 5b are two kinds of implementations of the pass gate control circuit 310 in Fig. 4, wherein, it is respectively adopted and compares Device and discrete device composition basic circuit.
As shown in Figure 5 a, in the first example, pass gate control circuit 310 includes comparator Uc1.Resistance R30 and R31 It is connected in series between supply lines and ground, so as to obtain the voltage division signal corresponding with DC bus-bar voltage Vh.Comparator Uc1's Inverting input receives voltage division signal, and in-phase input end receives reference voltage Vref, and output end produces the first control signal DR2. In this example, the first control signal DR2 is square wave.
As shown in Figure 5 b, in the second example, resistance R4, resistance R5, voltage-stabiliser tube Z3 and resistance R12 are sequentially connected in series Between supply lines and ground, to form potential-divider network, so as to obtain the voltage division signal corresponding with DC bus-bar voltage Vh.Resistance R6, resistance R9, resistance R21 and metal-oxide-semiconductor Q3 are sequentially connected in series between supply lines and ground.Metal-oxide-semiconductor Q3 grid is connected to surely Pressure pipe Z3 and resistance R12 intermediate node.The first control signal DR2 is provided in resistance R9 and resistance R21 intermediate node.
Resistance R7 and electric capacity C2 is sequentially connected in series between resistance R6 and R9 intermediate node and ground.Resistance R8 is connected to Between resistance R7 and electric capacity C2 intermediate node and resistance R9 and resistance R21 intermediate node.Further, voltage-stabiliser tube Z2 connections Between resistance R9 and resistance R21 intermediate node and ground.
Furthermore, can direct current is female by resistance R6, resistance R7, resistance R8, resistance R9, electric capacity C2, voltage-stabiliser tube Z2 Line voltage changes into DC voltage, is stored in electric capacity C2 both ends, and by voltage-stabiliser tube Z2 that metal-oxide-semiconductor grid voltage is stable in VZ2. By resistance R4, resistance R5, voltage-stabiliser tube Z3, resistance R12, DC bus-bar voltage Vh can be just divided into the consistent direct current arteries and veins of phase Dynamic voltage, the grid to metal-oxide-semiconductor Q3.If the voltage exceedes metal-oxide-semiconductor Q3 threshold voltages, metal-oxide-semiconductor Q3 conductings, metal-oxide-semiconductor Q2 grids Voltage is drawn sufficiently low by resistance R21.Now, the first control signal DR2 signal level is close to zero.Otherwise metal-oxide-semiconductor Q3 breaks Open, metal-oxide-semiconductor Q2 grid voltages are exactly VZ2.Now, the first control signal DR2 signal level is equal to VZ2.In this example, One control signal DR2 is square wave.
Fig. 6 is bypass overpower-protection circuit implementation.Circuit operation principle for convenience of description, also show in figure 6 Electronic device related to bypass overpower-protection circuit in bypass circuit is gone out.
With reference to the description referring to Fig. 4, metal-oxide-semiconductor Q2, resistance R10 and R11 are connected in series between supply lines and ground.Metal-oxide-semiconductor Q4 is connected in parallel with resistance R11.Obtained in resistance R10 and R11 intermediate node and characterize the current detection signal for flowing through metal-oxide-semiconductor Q2 Vs.Metal-oxide-semiconductor Q4 receives the second control signal Vcharge via resistance R16 from data resolution module U2.
Referring to Fig. 6, in overpower-protection circuit 311 is bypassed, resistance R13, R14 and R15, which are sequentially connected in series, to power Between line and ground, so as to obtain the voltage division signal corresponding with DC bus-bar voltage Vh.Triode Q5 is connected to metal-oxide-semiconductor Q4 grid Between pole and ground, and base stage is connected to resistance R14 and R15 intermediate node, to obtain voltage division signal as control signal.
Furthermore, when DC bus-bar voltage Vh is sufficiently high, by resistance R13, R14, R15 partial pressure, in triode Q5 Base stage and emitter stage form certain electric current, have larger pull-down current ability between triode Q5 collector and emitter, Second control signal Vcharge of metal-oxide-semiconductor Q4 grid is dragged down can by force, prevent metal-oxide-semiconductor Q4 from misleading.Work as dc bus When voltage Vh is very low, by resistance R13, R14, R15 partial pressure, it is not enough to puncture triode Q5 base stages and colelctor electrode, triode Q5 Just disconnect, high impedance is presented, the second control signal Vcharge of metal-oxide-semiconductor Q4 grid maintains the signal level of itself.In the reality Apply in example, triode Q4 can also be other switch property components such as metal-oxide-semiconductor.
Fig. 7 a and 7b are the waveform that metal-oxide-semiconductor Q4 misleads when taking place without overpower protection and having an overpower protection respectively Figure.
As described above, LED light modulating devices are respectively that light modulator 130 charges and changes electricity for power in the different periods The transimission power of road 303.In each half power frequency period, DC bus-bar voltage Vh caused by rectifier bridge is the DC pulse electricity of phase shortage Pressure.
In the phase shortage stage of DC pulse moving voltage, the impedance ratio of light modulator 130 is much larger as the LED of load impedance, Bear substantially all of voltage drop in the both ends of light modulator 130 outside rectifier bridge so that positioned at the straight of rectifier bridge output Flow busbar voltage Vh phase shortages.In the power transmission stage of DC pulse moving voltage, DC pulse moving voltage applies to the He of light modulator 130 Both LED.Light modulator impedance ratio LED impedances are much smaller.
Data resolution module U2 provides the second control signal Vcharge, to control the conducting of the metal-oxide-semiconductor Q4 in bypass circuit State.If the second control signal Vcharge duration is long, metal-oxide-semiconductor Q4 may be caused to mislead.
As shown in Figure 7a, if in the power transmission stage of DC pulse moving voltage, the second control signal Vcharge waveforms are not Normally, in the case of not having overpower protection, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q4 are simultaneously turned on.As a result, metal-oxide-semiconductor Q2 electric current is flowed through Very big, both end voltage is also very high, and metal-oxide-semiconductor Q2 overpowers can be burned out.
As shown in Figure 7b, if in the power transmission stage of DC pulse moving voltage, the second control signal Vcharge waveforms are not Normally, in the case of having overpower protection, the metal-oxide-semiconductor Q2 in metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q4 is individually turned on.In the second control letter During the abnormal generation of number Vcharge waveforms, DC bus-bar voltage Vh is also high level.Bypass in overpower-protection circuit 311 The DC bus-bar voltage Vh partial pressures that resistance R13, R14 and R15 will be received so that triode Q5 saturation conductions, by metal-oxide-semiconductor Q4's Second control signal Vcharge of grid is dragged down so that metal-oxide-semiconductor Q4 disconnects.In the state of metal-oxide-semiconductor Q2 conductings, in metal-oxide-semiconductor Q2 Electric current I1=(Vh-Vgs)/(R10+R11) flowed through.
It is above-mentioned have overpower protection in the case of, when LED both end voltages are certain value, the control of metal-oxide-semiconductor Q4 grids Voltage can be dragged down by overpower-protection circuit so that metal-oxide-semiconductor Q4 disconnects, and flows through Q2 electric current or normal I1 sizes.
Fig. 8 is hysteresis comparator Module implementations.In hysteresis comparator 312, electric capacity C5, resistance R17 and R18 are successively It is connected in series between supply lines and comparator Uc2 inverting input.Resistance R20 and R19 are connected in series in power supply circuit 306 Output end and ground between, resistance R20 and R19 intermediate node are connected with resistance R17 and resistance R18 intermediate node, so as to DC offset voltage is provided.Resistance R22 and R21 are connected in series between output end and the ground of power supply circuit 306, resistance R22 and R21 intermediate node is connected to comparator Uc2 in-phase input end, so as to provide reference voltage.Resistance R23 is connected to comparator Between Uc2 output end and in-phase input end.
Comparator Uc2 also receives the first control signal DR2, so as to be worked under the first control signal DR2 control, to prevent Only false judgment.
Furthermore, electric capacity C5 and resistance R17 compositions high-pass filter, receives DC bus-bar voltage Vh, and only allow The data-signal of high frequency can be by the way that the carrier wave of work frequency can not pass through.Resistance R19 and R20 provide DC offset voltage, resistance R22 and R21 provides reference voltage, and resistance R23 is the positive feedback resistor of hysteresis comparator.By high-pass filter and sluggishness relatively Device be combined with each other, with regard to that can solve power line carrier signal Cpo.
Fig. 9 is the decoupling oscillogram of hysteresis comparator module.DC bus-bar voltage Vh at least a portion period is used for Modulation light modulation data, in this embodiment, in each half power frequency period, stage of modulating is that DC bus-bar voltage Vh is reduced to zero Decline stage.That is, the ascent stage of DC bus-bar voltage is used for the power supply of light modulator 130, the interstage passes for power Defeated, the decline stage is used to dim data transfer.
In the power transmission stage, the reference voltage of comparator Uc2 in-phase input end is less than the voltage of inverting input, than Power carrier signal Cpo compared with device Uc2 outputs is low level.
In data transfer phase, when data trailing edge arrives, light modulation data-signal reaches via high-pass filter Comparator Uc2 inverting input so that anti-phase input terminal voltage declines.Once inverting input is less than in-phase input end electricity Pressure, the power carrier signal Cpo of comparator Uc2 outputs is height.Meanwhile pass through feedback resistance R23, the biased electrical of in-phase input end Pressure rises.
Further, in data transfer phase, when data rising edge arrives, light modulation data-signal is filtered via high pass Ripple device reaches comparator Uc2 inverting input so that anti-phase input terminal voltage raises.Once inverting input is higher than with mutually defeated Enter terminal voltage, the power carrier signal Cpo of comparator Uc2 outputs is low.Meanwhile by feedback resistance R23, in-phase input end Bias voltage reduces.
Therefore, in data transfer phase, go round and begin again, comparator Uc2 detects the trailing edge and rising edge of data, produces Corresponding square-wave signal, so as to obtain power carrier signal Cpo.Power carrier signal Cpo and DC bus-bar voltage Vh signal The waveform in transmission stage is corresponding, is further sent to data resolution module U2 and is used to parse data, produces corresponding pwm signal Modulate LED luminance.
Comparator Uc2 is also worked by under the first control signal DR2 control, to prevent false judgment.
In the T0-T1 stages, when the first control signal DR2 is low level, comparator Uc2 modules can not work, False judgment is prevented, comparator Uc2 outputs are defaulted as low level.
At the T1 moment, when the first control signal DR2 rising edges arrive, comparator Uc2 starts working and given tacit consent to Output level is low level.It is in parallel over the ground equivalent to resistance R23 and R21, and R22 partial pressures, from reference voltage obtain one it is relatively low Bias voltage.The bias voltage is delivered to comparator Uc2 in-phase input end.Now, electric capacity C5 and resistance R17 compositions high pass Wave filter, impedance is very big, resistance R19 and resistance R20 partial pressures, obtains a bias voltage.Comparator is delivered to by resistance R18 Uc2 inverting input, now inverting input is higher than homophase input terminal voltage, exports as low level.
At the T3 moment, DC bus-bar voltage Vh light modulation data-signal occurs, and starts data transfer phase.Dim data letter Number passing through high-pass filter C5 and resistance R17, R19 forms loop.Light modulation data-signal starts what is occurred in data transfer phase It is trailing edge, comparator Uc2 anti-phase input terminal voltage is down drawn, until trailing edge terminates.It is anti-phase defeated as comparator Uc2 Enter terminal voltage and be less than homophase input terminal voltage, comparator Uc2 output ends are high level, and are compared by feedback resistance R23 handles Device Uc2 in-phase input end bias voltage is raised.When light modulation data-signal trailing edge terminate, comparator Uc2 inverting inputs Voltage also begins to return to normal bias point.
At the T4 moment, the rising edge for dimming data-signal occurs.Light modulation data-signal passes through high-pass filter C5 and resistance R17, R19 form loop, and the rising edge for dimming data-signal up draws comparator Uc2 anti-phase input terminal voltage, Zhi Daoshang Edge is risen to terminate.When comparator Uc2 anti-phase input terminal voltage is higher than homophase input terminal voltage, comparator Uc2 output ends are low electricity It is flat, and comparator Uc2 in-phase input end bias voltage is declined by feedback resistance R23.
At the T5 moment, the next trailing edge for dimming data-signal occurs, comparator Uc2 output end level and T3 moment It is similar.
At the T6 moment, the next rising edge for dimming data-signal occurs, comparator Uc2 output end level and T4 moment It is similar.
Until T2 moment, DC bus-bar voltage Vh decline stage terminate, data transfer phase also accordingly terminates.Therefore, In data transfer phase, go round and begin again, comparator Uc2 detects the trailing edge and rising edge of data, produces corresponding square wave letter Number, so as to obtain power carrier signal Cpo.
Figure 10 is phase detecting module implementation.Circuit operation principle for convenience of description, side is also show in figure 6 The electronic device related to phase detecting module in the circuit of road.
Zero passage detection signal ZVD is produced according to current detection signal Vs in phase detecting module 313, believed according to the first control Number DR2 produces synchronizing signal SYN, is respectively supplied to data resolution module U2 two interrupting input ends INT0 and INT1.
In phase detecting module 313, resistance R35 and triode Q6 are sequentially connected in series in the defeated of power supply circuit 306 Go out between end and ground.Resistance R25 and R24 form potential-divider network, to obtain the voltage division signal corresponding with current detection signal Vs. Triode Q6 works under the control of voltage division signal, and provides zero passage detection in resistance R35 and triode Q6 intermediate node Signal ZVD.
Resistance R26 and R27 form potential-divider network, and synchronizing signal SYN is produced in the intermediate node of the two.Electric capacity C6 and resistance R27 is connected in parallel.
Furthermore, it is zero in DC bus-bar voltage Vh zero crossing, current detection signal Vs.By resistance R24, After R25, triode Q6 base voltages are also zero, and triode Q6 disconnects, and zero passage detection signal ZVD is high level.In dc bus Voltage Vh non-zero crossing, when current detection signal Vs is enough, triode Q6 base stage and emitter stage still puncture, triode Q6 Collector and emitter between turn on, zero passage detection signal ZVD is low level.Therefore, according to zero passage detection signal ZVD electricity Flat height is different, it is possible to judges whether DC bus-bar voltage Vh is in zero crossing.
Phase detecting module 313 is using metal-oxide-semiconductor Q2 grid voltage, i.e. the first control signal DR2 generation synchronizing signals SYN.Resistance R26 and R27 by the first control signal DR2 partial pressures to sufficiently low, to prevent the power supply more than data resolution module U2 Voltage vcc.Electric capacity C6 is used to filter out burr, prevents from disturbing.Synchronizing signal SYN is used to indicate the metal-oxide-semiconductor in bypass circuit 307 Q2 conducting state so that data resolution module U2 works asynchronously with bypass circuit.In an example, data resolution module U2 Data parsing is started according to the rising edge of the synchronizing signal, and data are stopped according to the rising edge of the zero passage detection signal Parsing.
Figure 11 is the oscillogram of DC bus-bar voltage, bypass driving and zero passage detection.
With reference to Fig. 4,10 and 11, in bypass circuit 307, pass gate control circuit 310 according to DC bus-bar voltage Vh, Produce the first control signal DR2.First control signal DR2 is square wave, for controlling metal-oxide-semiconductor Q2 ON time.If first Control signal DR2 is high level, then metal-oxide-semiconductor Q2 is turned on, otherwise metal-oxide-semiconductor Q2 disconnects.
When DC bus-bar voltage Vh is acted on LED, and metal-oxide-semiconductor Q4 disconnects, the electric current I1=(Vh- flowed through in metal-oxide-semiconductor Q2 Vgs)/(R10+R11)。
When the impedance of light modulator 130 is very big, DC bus-bar voltage Vh is acted on light modulator 130, and metal-oxide-semiconductor Q4 is led It is logical, electric current I2=(Vh-Vgs)/(R10) flowed through in metal-oxide-semiconductor Q2.Resistance R10 very littles, I2 can be very big, and LED impedance is basic It is zero.The electric current now flowed through in metal-oxide-semiconductor Q2 is determined by the impedance of light modulator 130.
When the first control signal DR2 is high level, DC bus-bar voltage Vh voltages are more than zero, now flowed through in metal-oxide-semiconductor Q2 Electric current be I1.The three of phase detecting module 313 in the current detection signal Vs driving decoupling circuits 308 obtained on resistance R11 Pole pipe Q6 so that triode Q6 is turned on, and zero passage detection signal ZVD is low level.When DC bus-bar voltage Vh zero crossings, now The electric current flowed through in metal-oxide-semiconductor Q2 is zero, and the voltage on resistance R11 can not drive triode Q6 to turn on, and zero passage detection signal ZVD is High level.When metal-oxide-semiconductor Q2 disconnects, zero passage detection signal ZVD is also high level.Data resolution module U2 can just start according to INT0 Decoupling, INT1 decouplings terminate;And according to DR2 be high level, when ZVD is rising edge, it is judged as the zero crossing of sine wave, so as to carry For the second control signal Vcharge, so as to be powered for light modulator 130.
When the first control signal DR2 is high level, and metal-oxide-semiconductor Q4 disconnects, and DC bus-bar voltage Vh is sufficiently high, Electric current I1=(Vh-Vgs)/(R10+R11) flowed through in metal-oxide-semiconductor Q2.The current detection signal Vs obtained on resistance R11 is enough Height, still can drive triode Q6 saturation conductions, and zero passage detection signal ZVD is low level.When the first control signal DR2 is high electricity It is flat, but DC bus-bar voltage Vh is the lowest point when even lack, the current detection signal Vs obtained on resistance R11 is essentially Zero, triode Q6 disconnect, and zero passage detection signal ZVD is high level.
When the first control signal DR2 is high level, and DC bus-bar voltage Vh voltages sufficiently high, zero passage detection signal again ZVD is low level.When the first control signal DR2 is low level, current detection signal Vs is substantially zeroed, zero passage detection signal ZVD Also it is high level.Go round and begin again, zero passage detection signal ZVD is the square wave synchronous with DC bus-bar voltage Vh voltage-phases.
In the phase detecting module 313 of decoupling circuit 308, synchronizing signal SYN is produced according to the first control signal DR2, For indicating the conducting state of the metal-oxide-semiconductor Q2 in bypass circuit 307 so that data resolution module U2 works synchronous with bypass circuit Make.
In the data resolution module U2 of decoupling circuit, two interrupting input ends INT0 and INT1 receive zero passage detection respectively Signal ZVD and synchronizing signal SYN, with reference to the two real zero crossing with regard to DC bus-bar voltage Vh can be judged.
Figure 12 is pin layout's schematic diagram when LED light modulating devices in Fig. 4 are integrated in a chip.Except power member device Part and electric capacity can not integrate, by the linear voltage decreasing module of circuit shown in Fig. 4, data resolution module U2 and multiple discrete components all Integrate on a single die.As shown in figure 12, the inside chip of chip and the reference of component and annexation and Fig. 4 phases Together, therefore no longer it is described in detail.
Using Figure 12 Integrated Solution, by the way that multiple discrete components are integrated on a single die, peripheral component subtracts Few, just simpler facilitate of energy must realize light modulation.The Integrated Solution more preferable can must make discrete device integrated, reduce cloth plate body Product, difficulty, scheme cost is reduced, is more easy to promote.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that Other identical element also be present in process, method, article or equipment including the key element.
According to embodiments of the invention as described above, these embodiments do not have all details of detailed descriptionthe, not yet It is only described specific embodiment to limit the invention.Obviously, as described above, can make many modifications and variations.This explanation Book is chosen and specifically describes these embodiments, is in order to preferably explain the principle and practical application of the present invention, so that affiliated Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right The limitation of claim and its four corner and equivalent.

Claims (17)

1. a kind of LED light modulating devices, including:
Bypass circuit, the bypass circuit have the first input end for being used to receive DC bus-bar voltage, for receiving the second control Second input of signal processed, for provide the first control signal the first output end and for providing current detection signal The second output end,
And decoupling circuit, the decoupling circuit have the first input end for being used to receive DC bus-bar voltage, for receiving the Second input of one control signal, the 3rd input for receiving current detection signal, for providing pulse-width signal The first output end and for provide the second control signal the second output end,
Wherein, the bypass circuit produces first control signal, the first control letter according to the DC bus-bar voltage Number it is used to control the conducting state of the bypass circuit, when the bypass circuit turns on, the DC bus-bar voltage is via institute The primary current path ground connection of bypass circuit is stated, the current detection signal characterizes the electric current flowed through in the primary current path,
The decoupling circuit parses according to first control signal and the current detection signal from DC bus-bar voltage Data-signal is dimmed, and the pulse-width signal is produced according to the light modulation data-signal.
2. LED light modulating devices according to claim 1, wherein, the decoupling circuit works asynchronously with the bypass circuit.
3. LED light modulating devices according to claim 1, wherein, impedance of the bypass circuit in conducting is according to First control signal changes.
4. LED light modulating devices according to claim 1, wherein, in addition to power supply circuit, the power supply circuit, which has, to be used for Receive the first input end of DC bus-bar voltage, the second input for ground connection and for providing the defeated of stable supply voltage Go out end.
5. LED light modulating devices according to claim 1, wherein, the bypass circuit also includes:
Pass gate control circuit, the pass gate control circuit have input and output end, the pass gate control Circuit receives DC bus-bar voltage in input, the DC bus-bar voltage is compared with the first reference voltage, to produce The first control signal is stated, and first control signal is provided in output end;And
The first metal-oxide-semiconductor, first resistor and the second resistance being connected in series between the first input end and ground of the bypass circuit,
Wherein, the output end of the pass gate control circuit connects the control terminal of the first metal-oxide-semiconductor, so as to which the described first control is believed Number control the first metal-oxide-semiconductor ON time,
The output end of the pass gate control circuit is connected to the first output end of the bypass circuit, so as to described first Output end provides first control signal,
The intermediate node of the first resistor and second resistance is connected to the second output end of the bypass circuit, so as to described Second output end provides the current detection signal.
6. LED light modulating devices according to claim 5, wherein, the bypass circuit also includes:
Second metal-oxide-semiconductor, it is connected between the intermediate node and ground of the first resistor and second resistance;And
3rd resistor, it is connected between the second input of the bypass circuit and the control terminal of second metal-oxide-semiconductor,
Wherein, second metal-oxide-semiconductor is under the control of second control signal, the height electricity at least in first control signal It is in the conduction state in a period during flat, so as to be outside the LED light modulating devices in one period Dimmer powered.
7. LED light modulating devices according to claim 6, wherein, the bypass circuit also includes:
Overpower-protection circuit is bypassed, the bypass overpower-protection circuit has input and output end, described to bypass work( Rate protection circuit receives DC bus-bar voltage in input, and different earth impedance is produced according to the height of DC bus-bar voltage, And the earth impedance is provided in output end,
Wherein, when the DC bus-bar voltage is higher than predetermined value, Low ESR over the ground is presented in the bypass overpower-protection circuit, So as to drag down the control terminal voltage of second metal-oxide-semiconductor, prevent the second metal-oxide-semiconductor from misleading, to protect the first metal-oxide-semiconductor.
8. LED light modulating devices according to claim 1, wherein, the decoupling circuit also includes:
Hysteresis comparator module, the hysteresis comparator module has first input end, the second input and output end, described slow Stagnant comparator module receives the second reference voltage in first input end, the second input receive the DC bus-bar voltage or The superposed signal of the DC bus-bar voltage and DC bias signal, the DC bus-bar voltage is converted into analog signal from institute State analog signal and obtain the light modulation data-signal, and the light modulation data-signal is provided in output end;And
Data resolution module, the data resolution module have first input end and the first output end, the data resolution module The light modulation data-signal is received in the first input end, light modulation data are obtained to produce according to the light modulation data-signal Pulse-width signal is stated, and the pulse-width signal is provided in first output end.
9. LED light modulating devices according to claim 8, wherein, the data resolution module is in first control signal Parsed when effectively, produce the pulse-width signal.
10. LED light modulating devices according to claim 8, wherein, the hysteresis comparator module includes:
High-pass filter, the high-pass filter prevent the power frequency component of the DC bus-bar voltage from passing through, it is allowed to the direct current The high-frequency signal modulated in busbar voltage passes through;And
First comparator, the first comparator is used to compare the high-frequency signal with the second reference voltage, to produce State light modulation data-signal.
11. LED light modulating devices according to claim 8, wherein, the decoupling circuit also includes:
Phase detecting module, the phase detecting module have first input end, the second input and the 3rd input, Yi Ji One output end and the second output end,
The phase detecting module connects respectively in the first input end, second input and the 3rd input respectively The current detection signal, supply voltage and first control signal are received, synchronous letter is produced according to first control signal Number, and the synchronizing signal is provided in second output end,
Wherein, the data resolution module also has the second input and the 3rd input, respectively receive zero passage detection signal and The synchronizing signal, and perform corresponding interrupt and control.
12. LED light modulating devices according to claim 11, wherein, the phase detecting module is according to the current detecting Signal obtains zero passage detection signal, and provides the zero passage detection signal in first output end.
13. LED light modulating devices according to claim 1, wherein, the DC bus-bar voltage is DC pulse moving voltage,
During the bypass circuit turns on, using the ascent stage of the DC bus-bar voltage for outside the LED light modulating devices The dimmer powered in portion, number is dimmed for the LED light modulating devices self transmission using the decline stage of the DC bus-bar voltage According to, and
During the bypass circuit disconnects, using the interstage of the DC bus-bar voltage for outside the LED light modulating devices The LED load transimission power in portion.
14. LED light modulating devices according to claim 4, wherein, by the bypass circuit, the decoupling circuit and described At least some components of power supply circuit are integrated in a chip.
15. a kind of LED drive power, the AC-input voltage for external ac power source to be provided is converted into direct current output electricity Pressure, with the LED load outside driving, wherein, the LED drive power includes:
Main power circuit, the main power circuit are connected between external ac power source and LED load;And
LED light modulating devices according to any one of claim 1 to 14,
Wherein, the LED light modulating devices are connected with the main power circuit to control the output current of main power circuit.
16. LED drive power according to claim 15, wherein, the main power circuit includes:
Rectifier bridge, for AC-input voltage to be converted into DC pulse moving voltage, as DC bus-bar voltage;
Circuit for power conversion, for DC bus-bar voltage to be converted into VD under the control of pulse-width signal;
EMI filter circuit, it is connected between rectifier bridge and circuit for power conversion, for preventing high frequency caused by circuit for power conversion Noise jamming,
Wherein, the LED light modulating devices are connected between the rectifier bridge and the EMI filter circuit, and are the power Change-over circuit provides pulse-width control signal.
17. LED drive power according to claim 16, wherein, in addition to diode, the diode be connected to described Between LED light modulating devices and the EMI filter circuit, and filtered along sense of current forward bias, the diode with EMI Circuit prevents high-frequency noise and low-frequency noise from being sent to LED light modulating devices from circuit for power conversion together.
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