CN105932145B - A kind of LED encapsulation structure and its lamp string structure of formation - Google Patents
A kind of LED encapsulation structure and its lamp string structure of formation Download PDFInfo
- Publication number
- CN105932145B CN105932145B CN201610558803.8A CN201610558803A CN105932145B CN 105932145 B CN105932145 B CN 105932145B CN 201610558803 A CN201610558803 A CN 201610558803A CN 105932145 B CN105932145 B CN 105932145B
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- China
- Prior art keywords
- led
- led encapsulation
- deep trench
- electrode
- encapsulation structure
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S4/00—Lighting devices or systems using a string or strip of light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation structure, it has transparent conductive material, the transparent conductive material includes Part I, the Part III for being partially filled with the Part II of the deep trench and being protruded above in the second side relative with deep trench for filling the connecting hole and shallow trench, its have comprising Part II and Part I with connect first and the 3rd electrode the first conductive path, and comprising Part III and Part I with connect second and the 4th electrode the second conductive path；The recessed portion shape of deep trench of the Part III of protrusion with being not filled by transparent conductive material matches.Multiple series-parallel lamp strings of LED chip can be achieved in the present invention, are easily changed, and method is simple.
Description
Technical field
The present invention relates to solid-state illumination Material Field, and in particular to a kind of LED encapsulation structure and its lamp string structure of formation.
Background technology
LED is a kind of solid state semiconductor devices, and electric energy directly can be converted into luminous energy by it.With traditional incandescent lamp,
Fluorescent lamp is compared, and white light LEDs have the advantages that power consumption is small, luminous efficiency is high, service life is long, energy-conserving and environment-protective, therefore it is not only
It can be widely used in normal lighting field, and field of display devices can be entered.
Current LED encapsulation is mainly COB（chip on board）Encapsulating structure, this encapsulation are mostly by multiple LED cores
Piece is fixed on substrate, carries out connection in series-parallel by routing, then carry out the integral sealing of resin.This kind of encapsulating structure, once occur
The damage of a LED chip in packaging body, it is impossible to change, and a series of cascade, the failure of whole packaging body can be caused,
It can not work.
The content of the invention
Based on solving the problems, such as in above-mentioned encapsulation, the invention provides a kind of LED encapsulation structure, including：
Fluorescent glass plate；
The first and second LED chips being fixed on the opposite face of fluorescent glass plate two, first LED chip have
First and second electrodes, second LED chip have the third and fourth LED electrode；
First and second LED chip, the fluorescent glue of the fluorescent glass plate are coated, the fluorescent glue wrapped shapes are
Cuboid or square；
On the first, second, third and fourth electrode and the exposure first, second, third and fourth electrode
Connecting hole；
Shallow trench positioned at first and second LED chip towards face, the shallow trench are respectively connected with leading to connecting hole；
Deep trench on the outside of the first side of first and second LED chip, the deep trench and the shallow ridges
Groove is connected, and the shallow trench and deep trench are formed at the fluorescent glue surface；
And transparent conductive material, including fill the Part I of the connecting hole and shallow trench, be partially filled with the depth
The Part II of groove and the Part III protruded above in the second side relative with deep trench, it, which has, includes Part II
With Part I with connect first and the 3rd electrode the first conductive path, and comprising Part III and Part I to connect
Second and the 4th electrode the second conductive path；
The recessed portion shape of deep trench of the Part III of protrusion with being not filled by transparent conductive material matches.
In the present invention, first conductive path is C-shaped, and second path is presented c-type.
In the present invention, the transparent conductive material be the oxide such as indium tin oxide target, Al-Doped ZnO, fluorine doped tin oxide or
Transparent metal material.
In the present invention, the fluorescent glue includes fluorescent material or fluorescent crystal.
In the present invention, the encapsulating structure applies electricity by the Part II and Part III of transparent conductive material
Pressure, make it that first and second LED chip is in parallel.
Present invention also offers a kind of LED string structure, and it includes multiple LED encapsulation structures described above, multiple LED envelopes
The depth of transparent conductive material is not filled by described in the Part III insertion for the protrusion that assembling structure passes through previous LED encapsulation structure
The recessed portion of groove and form the lamp string first in parallel connected again.
Multiple series-parallel lamp strings of LED chip can be achieved in the present invention, are easily changed, and method is simple.
Brief description of the drawings
Fig. 1 is the profile of the LED encapsulation structure of the present invention；
Fig. 2 is the graphics of the LED encapsulation structure of the present invention；
Fig. 3 is the top view of the LED encapsulation structure of the present invention；
Fig. 4 is the right view of the LED encapsulation structure of the present invention；
Fig. 5 is the schematic diagram of the LED string structure of the present invention.
Embodiment
Referring to Fig. 1-4, LED encapsulation structure of the invention is 360 degree of ray structures, and fluorescent glass plate 1 is rigid transparent base
Plate, and contain corresponding fluorescent grain thing, two LED chips 2 are located at the upper side and lower side of fluorescent glass plate 1, two cores respectively
Piece has two extraction electrodes 9 respectively, coats described two LED chips 2, the fluorescent glass plate 1 using fluorescent glue 3, and lead to
Cross the processes such as cutting polishing and form square shape or rectangular shape, there are four connections in the correspondence position of four electrodes 9
Hole 4, four connecting holes 4 are filled full transparent conductive material, had on the fluorescent glue surface that two LED chips 2 are faced
Four relatively shallower shallow trench 5, transparent conductive material is also filled up in shallow trench 5, and electrically connected with the connecting hole 4, position
There is deep trench 8 on the outside of the first side of described two LED chips 2, the deep trench 8 is connected with the shallow trench 5,
And the shallow trench 8 and deep trench 5 are formed at the surface of fluorescent glue 3.
The transparent conductive material is oxide or the transparent metal materials such as indium tin oxide target, Al-Doped ZnO, fluorine doped tin oxide
Material, including the Part I of the filling connecting hole 4 and shallow trench 5, be partially filled with the deep trench 8 Part II 7 and
In the Part III 6 that the second side relative with deep trench 8 protrudes above, it has comprising Part II 7 and Part I with even
The first conductive path of the left electrodes of side core piece and the left electrodes of downside chip is connected, and includes Part III and first
Part with connect upside chip right electrodes and downside chip right electrodes the second conductive path；Also, the institute of protrusion
The recessed portion shape for stating deep trench 8 of the Part III 6 with being not filled by transparent conductive material matches, it is preferred that deep trench 8
Depth is twice of the height of the Part III 6, and the recessed portion for being not filled by the deep trench 8 of transparent conductive material obtains depth
, thus can be when forming lamp string equal to the height of Part III, both are mutually embedded, reach the purpose of electricity interconnection.
First conductive path is C-shaped, and second path is presented c-type；The fluorescent glue include fluorescent material or
Fluorescent crystal；The encapsulating structure applies voltage by the Part II and Part III of transparent conductive material, to cause
First and second LED chip is in parallel.
Fig. 5 shows LED string structure of the present invention, and it includes multiple LED encapsulation structures described above, multiple LED encapsulation
The zanjon of transparent conductive material is not filled by described in the Part III insertion for the protrusion that structure passes through previous LED encapsulation structure
The recessed portion of groove and form the lamp string first in parallel connected again, can be provided between any two LED encapsulation structure transparent
Silica gel is to be used as adhesive layer.
Finally it should be noted that：Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description
Go out other various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
Among the obvious changes or variations that Shen goes out is still in protection scope of the present invention.
Claims (7)
1. a kind of LED encapsulation structure, including：
Fluorescent glass plate；
The first and second LED chips being fixed on the opposite face of fluorescent glass plate two, first LED chip have first
And second electrode, second LED chip have the third and fourth electrode；
First and second LED chip, the fluorescent glue of the fluorescent glass plate are coated, the fluorescent glue wrapped shapes are rectangular
Body or square；
On the first, second, third and fourth electrode and the exposure first, second, third and fourth electrode company
Connect hole；
Shallow trench positioned at first and second LED chip towards face, the shallow trench are respectively connected with leading to connecting hole；
Deep trench on the outside of the first side of first and second LED chip, the deep trench and the shallow trench phase
Connection, and the shallow trench and deep trench are formed at the fluorescent glue surface；
And transparent conductive material, including fill the Part I of the connecting hole and shallow trench, be partially filled with the deep trench
Part II and the Part III that is protruded above in the second side relative with deep trench, it has comprising Part II and the
A part with connect first and the 3rd electrode the first conductive path, and comprising Part III and Part I to connect second
With the second conductive path of the 4th electrode；
It is characterized in that：The recessed portion shape phase of deep trench of the Part III of protrusion with being not filled by transparent conductive material
Matching.
2. LED encapsulation structure according to claim 1, it is characterised in that：First conductive path is C-shaped.
3. LED encapsulation structure according to claim 1 or 2, it is characterised in that：The transparent conductive material is tin oxide
Indium, Al-Doped ZnO, fluorine doped tin oxide or transparent metal material.
4. LED encapsulation structure according to claim 1 or 2, it is characterised in that：The fluorescent glue includes fluorescent material or glimmering
Luminescent crystal.
5. LED encapsulation structure according to claim 1 or 2, it is characterised in that：The encapsulating structure passes through electrically conducting transparent material
The Part II and Part III of material apply voltage, make it that first and second LED chip is in parallel.
6. a kind of LED string structure, it includes multiple LED encapsulation structures as any one of claim 1-5, its feature
It is, is not filled by described in the Part III insertion for the protrusion that multiple LED encapsulation structures pass through previous LED encapsulation structure
The recessed portion of the deep trench of bright conductive material and form the lamp string first in parallel connected again.
7. LED string structure according to claim 6, it is characterised in that：It is provided between any two LED encapsulation structure saturating
Bright silica gel is to be used as adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610558803.8A CN105932145B (en) | 2016-07-17 | 2016-07-17 | A kind of LED encapsulation structure and its lamp string structure of formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610558803.8A CN105932145B (en) | 2016-07-17 | 2016-07-17 | A kind of LED encapsulation structure and its lamp string structure of formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105932145A CN105932145A (en) | 2016-09-07 |
| CN105932145B true CN105932145B (en) | 2018-02-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610558803.8A Active CN105932145B (en) | 2016-07-17 | 2016-07-17 | A kind of LED encapsulation structure and its lamp string structure of formation |
Country Status (1)
| Country | Link |
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| CN (1) | CN105932145B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465345A (en) * | 2007-12-19 | 2009-06-24 | 富士迈半导体精密工业（上海）有限公司 | Light source deviceLight source die set and method for manufacturing the light source device |
| CN103730454A (en) * | 2013-12-13 | 2014-04-16 | 青岛威力电子科技有限公司 | LED with functions of adjusting color temperature and improving color rendering |
| CN104241512A (en) * | 2013-06-11 | 2014-12-24 | 晶元光电股份有限公司 | light emitting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI390703B (en) * | 2010-01-28 | 2013-03-21 | Advanced Optoelectronic Tech | Top view type of light emitting diode package structure and fabrication thereof |
-
2016
- 2016-07-17 CN CN201610558803.8A patent/CN105932145B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465345A (en) * | 2007-12-19 | 2009-06-24 | 富士迈半导体精密工业（上海）有限公司 | Light source deviceLight source die set and method for manufacturing the light source device |
| CN104241512A (en) * | 2013-06-11 | 2014-12-24 | 晶元光电股份有限公司 | light emitting device |
| CN103730454A (en) * | 2013-12-13 | 2014-04-16 | 青岛威力电子科技有限公司 | LED with functions of adjusting color temperature and improving color rendering |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105932145A (en) | 2016-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yuan Ruping Inventor before: Wang Peipei |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180118 Address after: 518049 Guangdong city of Shenzhen province Futian District in Hong Road on the Merlin Excellence Center Plaza 1 No. 2 building 15 layer 03-05 Applicant after: SHENZHEN LEDMY CO., LTD. Address before: 226300 Century Avenue, Nantong high tech Zone, Jiangsu, China, No. 266, No. Applicant before: Wang Peipei |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |