CN105932116A - A1N template LED epitaxial growth method - Google Patents
A1N template LED epitaxial growth method Download PDFInfo
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- 230000012010 growth Effects 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 230000009467 reduction Effects 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000007796 conventional method Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The invention discloses an A1N template LED epitaxial growth method. The method successively comprises the following steps: processing a substrate, growing a non-doped GaN layer, growing an n-type GaN layer, growing a luminescent layer, growing an electron barrier layer, growing an Mg-doped P-type GaN layer, growing an electrode contact layer, and performing cooling. Compared to a conventional method, the method provided by the invention reduces the step of growing a low-temperautre baffer layer, at the same time, greatly shortens the time for growing the non-doped GaN layer and greatly reduces the production time. Besides, the XRD 102 face value is good by use of an A1N template, the quality of depositional crystals is greatly improved, and compared to a conventional GaN-base LED epitaxial structure, the brightness, the voltage reduction and the antistatic capability are obviously improved by use of the method.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of A1N mould
Plate LED epitaxial growth method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, volume
Little, power consumption long high brightness in low service life, environmental protection, the advantage such as sturdy and durable are recognized by consumers in general
Can, the scale of domestic production LED is also progressively expanding；To LED luminance and the demand of light efficiency on market
Grow with each passing day, how to grow more preferable epitaxial wafer and be increasingly subject to pay attention to, because the carrying of epitaxial layer crystal mass
Height, the performance of LED component can get a promotion, the luminous efficiency of LED, the life-span, ageing resistance,
Antistatic effect, stability can promote along with the lifting of epitaxial layer crystal mass.
Tradition LED epitaxial structure is GaN base, and growing method includes: process substrate, growing low temperature delays
Rush layer, growth undoped GaN layer, growing n-type GaN layer, growth luminescent layer, growth electronic blocking
Layer, the p-type GaN layer of growth doping Mg, growth contact electrode layer, cooling down.
In recent years, the research of GaN base LED deepens continuously, its luminous intensity, white light light efficiency, dissipate
The aspects such as heat have had and have significantly improved, and the commercial level of GaN base LED improves constantly, range of application
Constantly expand.But it is as the market continuous demand to high brightness, low-voltage and high-antistatic ability, passes
System GaN base LED lifting on brightness, voltage and antistatic effect and improve and the most difficult meet market
The speed of demand.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided outside a kind of A1N template LED
Epitaxial growth method, decreases the step of low temperature growth buffer layer, is greatly saved production time, Er Qieneng
Enough it is obviously improved the brightness of LED, reduces voltage and promote antistatic effect.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of A1N template LED epitaxial growth method, it is characterised in that
Include successively: process substrate, growth undoped GaN layer, growing n-type GaN layer, growth
Photosphere, growth electronic barrier layer, the p-type GaN layer of growth doping Mg, grow contact electrode layer, fall
Temperature cooling,
Described process substrate, be further:
Sapphire Substrate 5min-7min, on a sapphire substrate pre-sputtering A1N film is toasted at 650 DEG C
20s-45s, then formal sputtering A1N film 60s-75s on a sapphire substrate, then carry out water-cooled process
8min-12min, at N2Epitaxially grown A1N template substrate it is packaged to be under atmosphere；
Liter high-temperature is to 1200 DEG C-1250 DEG C, by described A1N template substrate at H2Atmosphere carries out height
Temperature purified treatment 3min-7min；
Described growth undoped GaN layer, be further:
Reduction temperature is to 1150 DEG C-1200 DEG C, and reaction chamber Stress control is in 550mbar-650mbar, growth
The undoped GaN layer of 0.5 μm-1.0 μ m thick；
Described growing n-type GaN layer, be further:
By reaction chamber pressure drop as little as 100mbar-200mbar, temperature controls at 1200 DEG C-1280 DEG C, raw
The n-type GaN layer of long 1.0 μm-1.5 μ m thick；
Described growth luminescent layer, be further:
Reduction temperature is to 680 DEG C-780 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The first barrier layer that 45nm-75nm is thick；
Temperature controls at 700 DEG C-750 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The shallow quantum well layer of InGaN/GaN of 2-6 cycle period, trap thickness 3nm-6nm；
Temperature controls at 700 DEG C-800 DEG C, the luminous multiple quantum well layer of 8-20 cycle period of growth, trap
Thick 0.7nm-2.5nm, builds thick 1.5nm-3.5nm.
Preferably, wherein:
Described process substrate, uses the method for physical vapour deposition (PVD) to be deposited on by described A1N film further
Described sapphire substrate surface.
Preferably, wherein:
Described growth electronic barrier layer, be further:
Temperature controls at 850 DEG C-950 DEG C, and reaction chamber Stress control, at 100mbar-350mbar, grows one
Layer electronic barrier layer, growth thickness is 3nm-15nm.
Preferably, wherein:
The p-type GaN layer of Mg is mixed in described growth:
Temperature controls at 1020 DEG C-1120 DEG C, reaction chamber Stress control at 400mbar-700mbar, with
N2 mixes the p-type GaN layer of Mg as carrier gas growth, and thickness is 25nm-65nm.
Preferably, wherein:
Described growth contact electrode layer, be further:
Reduction temperature is to 550 DEG C-700 DEG C, and reaction chamber Stress control, at 200mbar-500mbar, grows In
The p-type InGaN contact electrode layer of component doping, thickness is 1.5nm-5nm.
Preferably, wherein:
Described cooling down, be further:
Reduction temperature is to 500 DEG C-650 DEG C, and anneal under pure N2 atmosphere 5min-20min, then is down to room
Temperature.
Compared with prior art, method described herein, reach following effect:
First, A1N template LED epitaxial growth method of the present invention, compared with traditional method, decrease
The step of low temperature growth buffer layer, the time in the growth of undoped GaN layer reduces in a large number simultaneously, and tradition is raw
Length needs the time growing undoped GaN layer growth needs longer, grows into 2D growth from 3D and amounts to
Requiring more than 60min, thickness is more than 3 μm, and uses AlN template growth, it is only necessary to grow about 30min,
Thickness reduces half, uses AlN template growth, it is not necessary to growing low temperature GaN cushion simultaneously, adds
Rising temperature fall time, the time also can save about 5min.Additionally, due to AlN template growth is good
Crystalline quality, its XRD 102 is less than 170, and traditional epitaxial growth, more than 220, is therefore being given birth to
The time can also be reduced in a large number during long highly doped n-type GaN layer.Compare tradition GaN base LED extension raw
The GaN transition layer of long 1.0 traditional μm-2.0 μm, monolithic product averagely saves growth time about
40min-50min, therefore, uses the growing method of the present invention to save the production time in a large number, promotes and produce
The advantage of energy, improves production efficiency.
Second, utilize the product that A1N template LED epitaxial growth method of the present invention grows, use A1N
Template makes it have good XRD 102 face amount, and the crystal mass of deposition is greatly promoted, more traditional GaN
Base LED epitaxial structure is compared, and has clear improvement in brightness, reduction voltage and high-antistatic capability approach.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes of the application
Point, the schematic description and description of the application is used for explaining the application, is not intended that the application's
Improper restriction.In the accompanying drawings:
Fig. 1 is the structural representation of LED epitaxial layer in Example 1 and Example 2 of the present invention；
Fig. 2 is the structural representation of LED epitaxial layer in comparative example 1；
Fig. 3 is electrical parameter Cow-Lop (the chip on wafer brightness) contrast of sample 1 and sample 2
Figure；
Fig. 4 is the electrical parameter Vf1 comparison diagram of sample 1 and sample 2；
Fig. 5 is the electrical parameter ESD ＞ 2000V yield comparison diagram of sample 1 and sample 2；
Wherein, 1, A1N template, 2, undoped GaN, 3, n-type GaN layer, the 4, first potential barrier
Layer, 5, shallow quantum well layer, 6, multiple quantum well layer, 7, electronic barrier layer, 8, the p-type of doping Mg
Layer, 9, CTL layer, 10, Sapphire Substrate, 11, cushion GaN.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.This area skill
Art personnel are it is to be appreciated that hardware manufacturer may call same assembly with different nouns.This explanation
In the way of book and claim not difference by title is used as distinguishing assembly, but with assembly in function
On difference be used as distinguish criterion." bag as mentioned by the middle of description in the whole text and claim
Contain " it is an open language, therefore " comprise but be not limited to " should be construed to." substantially " refer to receivable
In range of error, those skilled in the art can solve described technical problem, base in the range of certain error
Originally described technique effect is reached.Additionally, " coupling " word comprises any directly and indirectly electrical coupling at this
Catcher section.Therefore, if a first device is coupled to one second device described in literary composition, then described first is represented
Device can directly be electrically coupled to described second device, or by other devices or to couple means the most electric
Property is coupled to described second device.Description subsequent descriptions is to implement the better embodiment of the application, so
For the purpose of described description is the rule so that the application to be described, it is not limited to scope of the present application.
The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
Seeing Fig. 1, the present invention uses long high brightness GaN-based LED in MOCVD next life.Adopt
Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3Make
For N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium (TEGa) as gallium source, three
Methyl indium (TMIn) is as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is made
For aluminum source, P-type dopant is two cyclopentadienyl magnesium (CP2Mg).Concrete growth pattern is as follows:
A kind of A1N template LED epitaxial growth method, includes: include successively successively: process substrate,
Growth undoped GaN layer, growing n-type GaN layer, growth luminescent layer, growth electronic barrier layer, life
The p-type GaN layer of long doping Mg, grows contact electrode layer, cooling down,
Described process substrate, be further:
Sapphire Substrate 5min-7min, on a sapphire substrate pre-sputtering A1N film is toasted at 650 DEG C
20s-45s, then formal sputtering A1N film 60s-75s on a sapphire substrate, then carry out water-cooled process
8min-12min, at N2Epitaxially grown A1N template substrate it is packaged to be under atmosphere；
Liter high-temperature is to 1200 DEG C-1250 DEG C, by described A1N template substrate at H2Atmosphere carries out height
Temperature purified treatment 3min-7min；
Described growth undoped GaN layer, be further:
Reduction temperature is to 1150 DEG C-1200 DEG C, and reaction chamber Stress control is in 550mbar-650mbar, growth
The undoped GaN layer of 0.5 μm-1.0 μ m thick；
Described growing n-type GaN layer, be further:
By reaction chamber pressure drop as little as 100mbar-200mbar, temperature controls at 1200 DEG C-1280 DEG C, raw
The n-type GaN layer of long 1.0 μm-1.5 μ m thick；
Described growth luminescent layer, be further:
Reduction temperature is to 680 DEG C-780 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The first barrier layer that 45nm-75nm is thick；
Temperature controls at 700 DEG C-750 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The shallow quantum well layer of InGaN/GaN of 2-6 cycle period, trap thickness 3nm-6nm；
Temperature controls at 700 DEG C-800 DEG C, the luminous multiple quantum well layer of 8-20 cycle period of growth, trap
Thick 0.7nm-2.5nm, builds thick 1.5nm-3.5nm.
In A1N template LED epitaxial growth method of the present invention, compared with traditional method, decrease growth
The step of low temperature buffer layer, the time in the growth of undoped GaN layer reduces in a large number simultaneously, more traditional GaN
Base LED epitaxial structure is compared, and has clear improvement in brightness, reduction voltage and high-antistatic capability approach.
Conventional growth needs the time growing undoped GaN layer growth needs longer, grows into 2D from 3D
Growth requires more than 60min altogether, and thickness is more than 3 μm, and the present invention uses AlN template growth,
Having only to grow about 30min, thickness reduces half, uses AlN template growth, it is not necessary to growth simultaneously
Low temperature GaN buffer, adds the heating and cooling time, and the time also can save about 5min.Additionally, due to
The crystalline quality that AlN template growth is good, its XRD 102 is less than 170, and traditional epitaxial growth exists
More than 220, therefore can also reduce the time in a large number when growing doped n-type GaN layer.Compare tradition
The GaN transition layer of 1.0 μm+2.0 μm that the epitaxial growth of GaN base LED is traditional, monolithic product is average
Save growth time about 40min-50min, therefore, use the growing method of the present invention can save life in a large number
The product time, promote the advantage of production capacity, improve production efficiency.
Embodiment 2
The Application Example of the A1N template LED epitaxial growth method of the present invention presented below, its extension
Structure sees Fig. 1, uses Aixtron Crius system to implement, and growing method is specific as follows:
1, by PVD (physical vapour deposition (PVD)), Sapphire Substrate being deposited A1N film, critical process is
Sapphire Substrate 5min-7min, on a sapphire substrate pre-sputtering A1N film is being toasted at 650 DEG C
20s-45s, then formal sputtering A1N film 60s-75s on a sapphire substrate, then carry out water-cooled process
10min, at N2Epitaxially grown A1N template substrate it is packaged to be under atmosphere.
2, by A1N template substrate at a temperature of 1200 DEG C-1250 DEG C, at H2Atmosphere carries out high temperature
Purified treatment 3min-7min.
3, reduce temperature to 1150 DEG C-1200 DEG C, reaction chamber Stress control at 550mbar-650mbar,
Grow the undoped GaN layer of 0.5 μm-1.0 μ m thick.
4, by reaction chamber pressure drop as little as 100mbar-200mbar, temperature controls at 1200 DEG C-1280 DEG C,
Grow the n-type GaN layer of 1.0 μm-1.5 μ m thick.
5, reduction temperature is to 680 DEG C-780 DEG C, and reaction chamber Stress control is at 150mbar-650mbar, raw
The first barrier layer that long 45nm-75nm is thick.
6, temperature controls at 700 DEG C-750 DEG C, and reaction chamber Stress control is at 150mbar-650mbar, raw
The shallow quantum well layer of InGaN/GaN of long 2-6 cycle period, trap thickness 3nm-6nm.
7, temperature controls at 700 DEG C-800 DEG C, the luminous multiple quantum well layer of 8-20 cycle period of growth,
Trap thickness 0.7nm-2.5nm, builds thick 1.5nm-3.5nm.
8, control temperature is between 850 DEG C-950 DEG C, grows one layer of electronic barrier layer, and Stress control exists
100mbar-350mbar, growth thickness is at 3nm-15nm.
9, with N2Mix the p-type GaN layer of Mg as carrier gas growth, temperature controls at 1020 DEG C-1120
DEG C, reaction chamber Stress control is at 400mbar-700mbar, and thickness is 25nm-65nm.
10, reduction temperature is to 550 DEG C-700 DEG C, and reaction chamber Stress control is at 200mbar-500mbar, raw
The p-type InGaN contact electrode layer (CTL layer) of long In component doping, thickness is 1.5nm-5nm.
11, after epitaxial growth terminates, it is cooled to 500 DEG C-650 DEG C, at pure N2Anneal under atmosphere
5min-20min, then it is down to room temperature, i.e. obtain LED epitaxial structure as shown in Figure 1.
Comparative example 1
A kind of tradition LED epitaxial growth method presented below is as the comparative example 1 of the present invention.
The growing method of tradition LED extension is (epitaxial layer structure sees Fig. 2):
1, by Sapphire Substrate at H2Carrying out high annealing under atmosphere, clean substrate surface, temperature controls
At 1000 DEG C-1250 DEG C, carry out purified treatment 3min-7min.
2, being cooled to 520-620 DEG C, keep reaction chamber pressure 450mbar-650mbar, growth thickness is
The low temperature buffer layer GaN of 20nm-35nm.
3, increase the temperature to 1150 DEG C-1200 DEG C, keep reaction chamber pressure 550mbar-650mbar, raw
The undoped GaN layer of long 1 μm-2 μ m thick.
4, temperature controls at 1200 DEG C-1280 DEG C, and growth pressure regulation is to 100mbar-200mbar, raw
The n-type GaN layer of long 1.5 μm-3.0 μ m thick.
5, being cooled to 680 DEG C-780 DEG C, growth pressure controls at 150mbar-650mbar, growth
First barrier layer of 45nm-75nm thickness.
6, and then growing shallow quantum well layer, temperature is between 700 DEG C-750 DEG C, and pressure exists
Between 150mbar-650mbar, shallow quantum well layer is made up of the InGaN/GaN of 2-6 circulation, shallow amount
Sub-well layer thickness is 3nm-6nm.
7, temperature controls between 700 DEG C-800 DEG C, grows the luminous multiple quantum well layer of 8-20 circulation,
Trap thickness 0.7nm-2.5nm, builds thick 1.5nm-3.5nm.
8, control temperature is between 850 DEG C-950 DEG C, grows one layer of electronic barrier layer, and Stress control exists
100mbar-350mbar, growth thickness is at 3nm-15nm.
9, with N2As carrier gas growth doping Mg P layer, growth temperature 1020 DEG C-1120 DEG C it
Between, pressure is at 400mbar-700mbar, thickness 25nm-65nm.
10,550 DEG C-700 DEG C it are cooled to, pressure 200mbar-500mbar, the P of growth In component doping
Type InGaN contact electrode layer, thickness 1.5nm-5nm.
11, after epitaxial growth terminates, it is cooled to 500 DEG C-650 DEG C, at pure N2Anneal under atmosphere
5min-20min, then it is down to room temperature.
On same board, according to the growing method (method of comparative example 1) of traditional LED
Prepare sample 1, prepare sample 2 according to the method that this patent describes；Sample 1 and sample 2 epitaxial growth
The maximum difference of method is that sample 2 uses the growth of A1N template substrate, does not has in its structure
The low temperature buffer layer of tradition GaN base LED growth, subtracts at undoped GaN layer growth time simultaneously in a large number
Few, sample 1 uses tradition Sapphire Substrate growth.
Sample 1 plates ITO layer about 150nm, identical condition with sample 2 under identical front process conditions
Lower plating Cr/Pt/Au electrode about 1500nm, identical under conditions of plating SiO2 about 100nm, then
At identical conditions sample grinding and cutting is become the chip granule of 425 μm * 850 μm (17mil*34mil),
Then sample 1 and sample 2 each select 100 crystal grain in same position, under identical packaging technology,
It is packaged into white light LEDs.Then integrating sphere test sample 1 He under the conditions of driving electric current 350mA is used
The photoelectric properties of sample 2.
(chip on wafer is bright for electrical parameter Cow-Lop for sample 1 and sample 2 shown in Figure 3
Degree) comparison diagram, Fig. 4 is the electrical parameter Vf1 comparison diagram of sample 1 and sample 2, and Fig. 5 is sample 1
Electrical parameter ESD ＞ 2000V yield comparison diagram with sample 2.Can be seen that from Fig. 3-Fig. 5, its
Cow_Lop is brought up to average 142.3mw by average 130.2mw, and Cow_Lop promotes ratio up to
9.29%, Vf1 are dropped to average 2.98V by average 3.09V, and down ratio reaches 3.56%, ESD ＞ 2000V
Ratio is risen to average 93.49% by average 88.96%, and yield ratio promotes and reaches 4.53%.
Therefore, can be concluded that by the Data Comparison of Fig. 3, Fig. 4 and Fig. 5
The growing method provided by this patent, LED electrical parameter improves, and brightness significantly improves, and
Also have clear improvement in terms of reducing voltage Vf1 and improving antistatic effect.Experimental data demonstrates this specially
The scheme of profit can significantly improve brightness, reduces voltage and promote the feasibility of antistatic effect.
By various embodiments above, the application exists and provides the benefit that:
First, A1N template LED epitaxial growth method of the present invention, compared with traditional method, decrease
The step of low temperature growth buffer layer, the time in the growth of undoped GaN layer reduces in a large number simultaneously, and tradition is raw
Length needs the time growing undoped GaN layer growth needs longer, grows into 2D growth from 3D and amounts to
Requiring more than 60min, thickness is more than 3 μm, and uses AlN template growth, it is only necessary to grow about 30min,
Thickness reduces half, uses AlN template growth, it is not necessary to growing low temperature GaN cushion simultaneously, adds
Rising temperature fall time, the time also can save about 5min.Additionally, due to AlN template growth is good
Crystalline quality, its XRD 102 is less than 170, and traditional epitaxial growth, more than 220, is therefore being given birth to
The time can also be reduced in a large number during long highly doped n-type GaN layer.Compare tradition GaN base LED extension raw
The GaN transition layer of long 1.0 traditional μm-2.0 μm, monolithic product averagely saves growth time about
40min-50min, therefore, uses the growing method of the present invention to save the production time in a large number, promotes and produce
The advantage of energy, improves production efficiency.
Second, utilize the product that A1N template LED epitaxial growth method of the present invention grows, use A1N
Template makes it have good XRD 102 face amount, and the crystal mass of deposition is greatly promoted, more traditional GaN
Base LED epitaxial structure is compared, and has clear improvement in brightness, reduction voltage and high-antistatic capability approach.
Those skilled in the art it should be appreciated that embodiments herein can be provided as method, device or
Computer program.Therefore, the application can use complete hardware embodiment, complete software implementation,
Or combine the form of embodiment in terms of software and hardware.And, the application can use one or more
The computer-usable storage medium wherein including computer usable program code (includes but not limited to disk
Memorizer, CD-ROM, optical memory etc.) form of the upper computer program implemented.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should reason
Solve the application and be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments,
And can be used for various other combination, amendment and environment, and can in invention contemplated scope described herein,
It is modified by above-mentioned teaching or the technology of association area or knowledge.And those skilled in the art are carried out changes
Move and change is without departing from spirit and scope, the most all should be in the protection of the application claims
In the range of.
Claims (6)
1. an A1N template LED epitaxial growth method, it is characterised in that
Include successively: process substrate, growth undoped GaN layer, growing n-type GaN layer, growth
Photosphere, growth electronic barrier layer, the p-type GaN layer of growth doping Mg, grow contact electrode layer, fall
Temperature cooling,
Described process substrate, be further:
Sapphire Substrate 5min-7min, on a sapphire substrate pre-sputtering A1N film is toasted at 650 DEG C
20s-45s, then formal sputtering A1N film 60s-75s on a sapphire substrate, then carry out water-cooled process
8min-12min, at N2Epitaxially grown A1N template substrate it is packaged to be under atmosphere；
Liter high-temperature is to 1200 DEG C-1250 DEG C, by described A1N template substrate at H2Atmosphere carries out height
Temperature purified treatment 3min-7min；
Described growth undoped GaN layer, be further:
Reduction temperature is to 1150 DEG C-1200 DEG C, and reaction chamber Stress control is in 550mbar-650mbar, growth
The undoped GaN layer of 0.5 μm-1.0 μ m thick；
Described growing n-type GaN layer, be further:
By reaction chamber pressure drop as little as 100mbar-200mbar, temperature controls at 1200 DEG C-1280 DEG C, raw
The n-type GaN layer of long 1.0 μm-1.5 μ m thick；
Described growth luminescent layer, be further:
Reduction temperature is to 680 DEG C-780 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The first barrier layer that 45nm-75nm is thick；
Temperature controls at 700 DEG C-750 DEG C, and reaction chamber Stress control is in 150mbar-650mbar, growth
The shallow quantum well layer of InGaN/GaN of 2-6 cycle period, trap thickness 3nm-6nm；
Temperature controls at 700 DEG C-800 DEG C, the luminous multiple quantum well layer of 8-20 cycle period of growth, trap
Thick 0.7nm-2.5nm, builds thick 1.5nm-3.5nm.
A1N template LED epitaxial growth method the most according to claim 1, it is characterised in that
Described process substrate, uses the method for physical vapour deposition (PVD) to be deposited on by described A1N film further
Described sapphire substrate surface.
A1N template LED epitaxial growth method the most according to claim 1, it is characterised in that
Described growth electronic barrier layer, be further:
Temperature controls at 850 DEG C-950 DEG C, and reaction chamber Stress control, at 100mbar-350mbar, grows one
Layer electronic barrier layer, growth thickness is 3nm-15nm.
A1N template LED epitaxial growth method the most according to claim 1, it is characterised in that
The p-type GaN layer of Mg is mixed in described growth:
Temperature controls at 1020 DEG C-1120 DEG C, reaction chamber Stress control at 400mbar-700mbar, with
N2 mixes the p-type GaN layer of Mg as carrier gas growth, and thickness is 25nm-65nm.
A1N template LED epitaxial growth method the most according to claim 1, it is characterised in that
Described growth contact electrode layer, be further:
Reduction temperature is to 550 DEG C-700 DEG C, and reaction chamber Stress control, at 200mbar-500mbar, grows In
The p-type InGaN contact electrode layer of component doping, thickness is 1.5nm-5nm.
6. according to the arbitrary described A1N template LED epitaxial growth method of Claims 1 to 5, its feature
It is,
Described cooling down, be further:
Reduction temperature is to 500 DEG C-650 DEG C, and anneal under pure N2 atmosphere 5min-20min, then is down to room
Temperature.
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