CN105932108A - Chain crystalline silicon texturing equipment and preparation method - Google Patents
Chain crystalline silicon texturing equipment and preparation method Download PDFInfo
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- CN105932108A CN105932108A CN201610411087.0A CN201610411087A CN105932108A CN 105932108 A CN105932108 A CN 105932108A CN 201610411087 A CN201610411087 A CN 201610411087A CN 105932108 A CN105932108 A CN 105932108A
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- Prior art keywords
- crystal silicon
- groove
- tank
- woolen
- chain type
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 164
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 164
- 239000010703 silicon Substances 0.000 claims abstract description 164
- 238000005530 etching Methods 0.000 claims abstract description 69
- 238000001035 drying Methods 0.000 claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 31
- 238000005516 engineering process Methods 0.000 claims abstract description 24
- 238000011068 loading method Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 119
- 239000007788 liquid Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 47
- 230000005540 biological transmission Effects 0.000 claims description 44
- 235000008216 herbs Nutrition 0.000 claims description 33
- 210000002268 wool Anatomy 0.000 claims description 33
- 210000005056 cell body Anatomy 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 230000005587 bubbling Effects 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 238000005276 aerator Methods 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 230000003197 catalytic effect Effects 0.000 abstract description 5
- 239000002253 acid Substances 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 14
- 239000000243 solution Substances 0.000 description 10
- 241000628997 Flos Species 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000003513 alkali Substances 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- -1 reacts certain time Substances 0.000 description 1
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides chain crystalline silicon texturing equipment and a preparation method, and belongs to the field of crystalline silicon solar cells. The chain crystalline silicon texturing equipment comprises a texturing tank, a cleaning tank, a post-treatment tank, a drying tank and a chain drive system which are sequentially arranged along the operation direction of crystalline silicon at intervals; the chain drive system is used for driving a flower basket; the flower basket is used for loading a silicon wafer; the chain drive system comprises the texturing tank, the cleaning tank, the post-treatment tank and the drying tank; and each tank body in the texturing tank, the cleaning tank, the post-treatment tank and the drying tank is provided with individual drive devices. The chain crystalline silicon texturing equipment provided by the invention can meet the requirements of texturing polycrystalline silicon and monocrystalline silicon respectively, can also be applied to a metal catalytic etching texturing technology, and is good in general performance; and the problem of a single purpose of existing texturing equipment is solved. The preparation method of crystalline silicon texturing provided by the invention can be applicable to polycrystalline silicon and monocrystalline silicon texturing technologies.
Description
Technical field
The present invention relates to crystal silicon solar batteries field, particularly relate to a kind of chain type crystal silicon etching device and system
Preparation Method.
Background technology
In crystal silicon solar batteries manufactures, wet-method texturing manufacturing process is that crystal silicon chip surface carries out wet method quarter
Erosion, forms surface suede structure, reduces the reflectance of silicon chip surface so that sunlight is carried out at silicon chip surface
Repeatedly launch, and then increase the absorption to sunlight.The etching method generally used is to first pass through alkali liquor pair
Monocrystalline silicon sheet surface performs etching, and forms pyramid suede structure, or uses acid solution to polysilicon chip surface
Perform etching, form vermiform suede structure.But, monocrystal silicon making herbs into wool typically requires and is heated to by alkali liquor
75 DEG C～85 DEG C, etching at least 20 minutes, polysilicon making herbs into wool is then to need to cool to acid solution 10 DEG C
Left and right, making herbs into wool process is generally at about 5 minutes.Thus for monocrystalline and polycrystalline making herbs into wool, it is necessary to design and
Use different etching devices, generally monocrystal silicon is used groove type etching equipment, and polysilicon is used chain type
Etching device.
But the most there is not the equipment that can respectively polysilicon and monocrystal silicon be carried out making herbs into wool.
Summary of the invention
It is an object of the present invention to provide a kind of chain type crystal silicon etching device, it is possible to meet respectively to polysilicon
Carrying out making herbs into wool with monocrystal silicon, universal performance is good, solves the problem that existing etching device purposes is single.
It is a further object to provide the preparation method of a kind of crystal silicon making herbs into wool, it is possible to be applicable to polysilicon
Process for etching with monocrystal silicon.
Especially, the present invention provides a kind of chain type crystal silicon etching device, including the direction of operating along described crystal silicon
Texturing slot, rinse bath, rear treating groove, drying tank and the chain type for the transmission gaily decorated basket being sequentially arranged at intervals
Drive system, the described gaily decorated basket is used for loading silicon chip, and described linked transmission system includes described texturing slot, cleaning
The independent actuating device that in groove, rear treating groove and drying tank, each cell body is respectively provided with.
Further, described texturing slot, rinse bath, rear treating groove and drying tank are provided with biography in each cell body
Dynamic motor, in described texturing slot, rinse bath, rear treating groove and drying tank, each cell body top is provided with transmission
Roller, described live roller is connected with described transmission motor, for the gaily decorated basket described in transmission；Preferably, institute
State and be provided with on live roller for placing described gaily decorated basket transmission band.
Further, the actuating device being independently arranged in described each cell body cooperates, and forms one along institute
State the complete linked transmission bar of the direction of operating of crystal silicon so that the described gaily decorated basket is along described linked transmission bar successively
Drive to described texturing slot, rinse bath, rear treating groove and drying tank；Described silicon chip vertically puts into the described gaily decorated basket,
The direction of described silicon chip is identical with the direction of described linked transmission drive system；Alternatively, described linked transmission
The quantity of bar is one or more of.
Further, in described texturing slot, rinse bath, rear treating groove, drying tank each cell body select with
Time acid-fast alkali-proof material make, the receiving space size of described each cell body, including the degree of depth of cell body, groove
The length of body, the width of cell body is according to designed by the size and number of the crystal silicon of a batch processing.
Further, described texturing slot includes the process for etching groove and the arranged along the direction of operating of described crystal silicon
One tank；Described process for etching groove and the first tank are flow structure, and medicinal liquid overflows to water jacket from inside groove surrounding,
By circulating pump, medicinal liquid is transmitted back in groove bottom inside groove by water jacket again, forms circulation.
Further, described process for etching groove includes being located therein temperature control equipment, bubbling device, system
One or more in floss liquid concentration detection apparatus and Woolen-making liquid conveyer device；Wherein, described temperature controls
Device is for controlling the temperature of Woolen-making liquid in described process for etching groove；Described Woolen-making liquid concentration detection apparatus is used for
The concentration of each composition of detection Woolen-making liquid, including silver ion, copper ion, the detection device of fluorion；
Described Woolen-making liquid conveyer device is for carrying Woolen-making liquid in described process for etching groove so that making herbs into wool liquid dense
Degree is in predetermined scope.
Further, described rinse bath includes the cleaning groove and the arranged along the direction of operating of described crystal silicon
Two tanks；Alternatively, described cleaning groove include being located therein ultrasonic cleaning equipment.
Further, described rear treating groove includes the aftertreatment technology groove arranged along the direction of operating of described crystal silicon
With the second tank.
Further, described drying tank includes heater and the aerator being located therein.
Present invention also offers the preparation method of a kind of crystal silicon making herbs into wool, the preparation method of described crystal silicon making herbs into wool uses
Chain type crystal silicon etching device as the aforementioned, its step includes:
S1, in described process for etching groove add Woolen-making liquid, be heated to predetermined temperature, passed by described chain type
The gaily decorated basket loading predetermined quantity silicon chip is transferred in Woolen-making liquid by dynamic system, after the reaction scheduled time, by making herbs into wool
After silicon chip by the gaily decorated basket be transferred in described first tank remove crystal silicon surface Woolen-making liquid；
S2, in described cleaning groove add cleanout fluid, by described linked transmission system by described loading
The gaily decorated basket of predetermined quantity silicon chip is transferred in described cleaning groove, after going the removal of impurity, is transferred to described second
In tank, remove the cleanout fluid on crystal silicon surface；
S3, in the rear process technology groove add aftertreatment fluid, by described linked transmission system by described
The gaily decorated basket loading predetermined quantity silicon chip is transferred in described aftertreatment technology groove, and the metal removing crystal silicon surface is miscellaneous
After matter and oxide, crystal silicon is transferred in described 3rd tank, after cleaning crystal silicon surface with deionized water
Treatment fluid；
S4, will clean with deionized water after crystal silicon be transferred in described drying tank crystal silicon is dried place
Reason.
A kind of chain type crystal silicon etching device that the present invention provides, can be used for monocrystal silicon and the system of polysilicon industrialization
In floss technique, it is also possible to being applied in metal catalytic etching process for etching, universal performance is good, solves existing
The single problem of etching device purposes.
The preparation method of a kind of crystal silicon making herbs into wool that the present invention provides, technique is simple, it is easy to operation, it is adaptable to single
Crystal silicon and the industrialization of polysilicon process for etching.
Accompanying drawing explanation
Some describing the present invention the most by way of example, and not by way of limitation in detail are concrete
Embodiment.Reference identical in accompanying drawing denotes same or similar parts or part.Art technology
Personnel are it should be understood that what these accompanying drawings were not necessarily drawn to scale.In accompanying drawing:
Fig. 1 is the structural representation of a kind of chain type crystal silicon etching device；
Fig. 2 is the partial structurtes schematic diagram according to a kind of chain type crystal silicon etching device shown in Fig. 1.
Detailed description of the invention
Embodiment 1:
Fig. 1 is the structural representation of a kind of chain type crystal silicon etching device.As
Shown in Fig. 1, a kind of chain type crystal silicon etching device of the present invention, depend on including the direction of operating D along described crystal silicon
Minor tick arrangement texturing slot 1, rinse bath 2, rear treating groove 3, drying tank 4 and for the transmission gaily decorated basket (figure
Not shown in) linked transmission system 5, described gaily decorated basket (not shown) is used for loading silicon chip, described
Linked transmission system includes each groove in described texturing slot 1, rinse bath 2, rear treating groove 3 and drying tank 4
The independent actuating device 51 that body is respectively provided with, wherein the direction of operating D of crystal silicon is for being that crystal silicon is at process for etching
Movement on line or the direction of motion, have interval between each cell body, it is ensured that the solution between adjacent cell body separates；
The actuating device 51 being independently arranged makes it possible to by controlling the transmission speed in each cell body, and then controls
Process time in each cell body.
Specifically, in described texturing slot 1, rinse bath 2, rear treating groove 3 and drying tank 4 in each cell body
It is provided with transmission motor (not shown), described texturing slot 1, rinse bath 2, rear treating groove 3 and drying tank
In 4, each cell body top is provided with live roller (not shown), described live roller (not shown)
It is connected with described transmission motor (not shown), for gaily decorated basket (not shown) described in transmission；
The actuating device 51 being independently arranged in described each cell body cooperates, and forms the behaviour along described crystal silicon
Make the complete linked transmission bar of direction D so that the described gaily decorated basket can be along described linked transmission bar transmission successively
To described texturing slot 1, rinse bath 2, rear treating groove 3 and drying tank 4；Described silicon chip vertically puts into described flower
(its direction i.e. operation side of crystal silicon, direction of basket, the direction of described silicon chip and described linked transmission drive system
To D) identical, to reduce resistance during transmission；Alternatively, the quantity of described linked transmission bar be one or
Person is a plurality of, and the quantity of described linked transmission bar designs according to the size of cell body, the useful load of the gaily decorated basket.Described flower
Basket can be placed on integral drive on described live roller, it is also possible to arranges transmission on described live roller
Band, so that more reliable and more stable when the described gaily decorated basket transmits.Described linked transmission system 5 in the present invention is also
It is not limited to the described kind of drive, it is also possible to include that other those skilled in the art commonly use the kind of drive, as
V belt translation or frictional wheel drive etc., as long as it is capable of carrying out controlling speed to the gaily decorated basket being mounted with silicon chip
The transmission of degree.
Further, each cell body in described texturing slot 1, rinse bath 2, rear treating groove 3, drying tank 4
Selection can be made the material of simultaneously acid-fast alkali-proof, and the receiving space size of described each cell body, including cell body
The degree of depth, the length of cell body, the width of cell body is according to set by the size and number of the crystal silicon of a batch processing
Meter.
Specifically, Fig. 2 is the partial structurtes schematic diagram according to a kind of chain type crystal silicon etching device shown in Fig. 1.
As in figure 2 it is shown, described texturing slot 1 includes the process for etching groove arranged along the direction of operating D of described crystal silicon
11 and first tank 12；Described process for etching groove 11 and the first tank 12 are flow structure, and medicinal liquid is from inside groove
Surrounding overflows to water jacket, then is transmitted back to bottom inside groove in groove by medicinal liquid by circulating pump by water jacket, and formation follows
Ring.Described process for etching groove 11 includes temperature control equipment (not shown), the bubbling being located therein
Device (not shown), Woolen-making liquid concentration detection apparatus (not shown) and Woolen-making liquid conveyer device
One or more in (not shown)；Wherein, described temperature control equipment is used for controlling described system
The temperature of Woolen-making liquid in floss technology groove；Described Woolen-making liquid concentration detection apparatus is for detecting each one-tenth of Woolen-making liquid
The concentration divided, including the detection device of silver ion, copper ion, fluorion or other ions；Described system
Floss liquid conveyer device is for carrying Woolen-making liquid constantly or discontinuously in described process for etching groove so that system
The concentration of floss liquid is in predetermined scope, and described Woolen-making liquid can be acid solution or alkali liquor.
As it is shown in figure 1, described rinse bath 2 includes the cleaning arranged along the direction of operating D of described crystal silicon
Groove 21 and the second tank 22；Alternatively, described cleaning groove 21 include being located therein ultrasound wave clear
Cleaning device (not shown), ultrasonic cleaning equipment is for being carried out the silicon chip in the gaily decorated basket.Described
Rear treating groove 3 includes aftertreatment technology groove 31 and the second tank arranged along the direction of operating D of described crystal silicon
32.Described drying tank 4 includes that the heater (not shown) being located therein and aerator (do not show in figure
Go out), drying tank 4 uses heater and air blast mode to heat, and adding thermal medium is air.
Present invention also offers the preparation method of a kind of crystal silicon making herbs into wool, the preparation method of described crystal silicon making herbs into wool uses
Chain type crystal silicon etching device as the aforementioned, its step includes:
S1, in described process for etching groove add Woolen-making liquid, be heated to predetermined temperature, passed by described chain type
The gaily decorated basket loading predetermined quantity silicon chip is transferred in Woolen-making liquid by dynamic system, after the reaction scheduled time, by making herbs into wool
After silicon chip by the gaily decorated basket be transferred in described first tank remove crystal silicon surface Woolen-making liquid；
S2, in described cleaning groove add cleanout fluid, by described linked transmission system by described loading
The gaily decorated basket of predetermined quantity silicon chip is transferred in described cleaning groove, after going the removal of impurity, is transferred to described second
In tank, remove the cleanout fluid on crystal silicon surface；
S3, in the rear process technology groove add aftertreatment fluid, by described linked transmission system by described
The gaily decorated basket loading predetermined quantity silicon chip is transferred in described aftertreatment technology groove, and the metal removing crystal silicon surface is miscellaneous
After matter and oxide, crystal silicon is transferred in described 3rd tank, after cleaning crystal silicon surface with deionized water
Treatment fluid；
S4, will clean with deionized water after crystal silicon be transferred in described drying tank crystal silicon is dried place
Reason.
Wherein said Woolen-making liquid can be alkaline solution or acid solution, described cleanout fluid and described Woolen-making liquid
The contrary acid solution of Acidity of Aikalinity or alkaline solution, in order to remove during making herbs into wool residual on crystal silicon
Woolen-making liquid.Described aftertreatment fluid can be a kind of in Fluohydric acid. or certain density hydrochloric acid or the two
Mixed liquor.
A kind of chain type crystal silicon etching device that the present invention provides, can be used for monocrystal silicon and the system of polysilicon industrialization
In floss technique, it is also possible to being applied in metal catalytic etching process for etching, universal performance is good, solves existing
The single problem of etching device purposes.
The preparation method of a kind of crystal silicon making herbs into wool that the present invention provides, technique is simple, it is easy to operation, it is adaptable to single
Crystal silicon and the industrialization of polysilicon process for etching.
In a specific embodiment, for monocrystal silicon making herbs into wool, during making herbs into wool, process for etching groove 11
Add alkali Woolen-making liquid, and be heated to predetermined temperature, predetermined quantity silicon chip will be loaded by actuating device 51
The gaily decorated basket is transferred in Woolen-making liquid, and reaction certain time crystal silicon surface obtains pyramid matte.By the silicon after making herbs into wool
Sheet is transferred in the first tank 12 remove the alkaline solution on crystal silicon surface by the gaily decorated basket.Wherein process for etching groove
Also include Woolen-making liquid conveyer device in 11, according to the batch of reaction, there is automatic fluid filling function so that Woolen-making liquid
The concentration of body is in predetermined scope.
Rinse bath 2 includes cleaning groove 21 and the second tank arranged along the direction of operating D of described crystal silicon
22.The hydrochloric acid of predetermined concentration is added in cleaning groove 21.By actuating device, crystal silicon is transferred to
In cleaning groove 21, remove the impurity such as metal ion.It is transferred to again in the second tank 22, removes crystal silicon
The acidic liquid on surface.
Rear treating groove 3 includes the aftertreatment technology groove 31 and the 3rd arranged along the direction of operating D of described crystal silicon
Tank 32.The Fluohydric acid. of predetermined concentration is added in aftertreatment technology groove 31.By actuating device, by crystalline substance
Silicon is transferred in aftertreatment technology groove 31, removes the oxide on crystal silicon surface, makes silicon chip more dehydration.Again
Crystal silicon is transferred in the 3rd tank 32, cleans Fluohydric acid. with deionized water.
Drying tank 4 uses heater and air blast mode to heat, and adding thermal medium is air.Will be clear with deionized water
The crystal silicon washed is transferred in drying tank 4 crystal silicon is dried process, it is ensured that crystal silicon surface does not exist washmarking
Mark.
Embodiment 2
In another particular embodiment of the invention, its place same as in Example 1 does not repeats at this, only
It is illustrated with different places.
For polysilicon making herbs into wool, during making herbs into wool, process for etching groove 11 adds acid Woolen-making liquid, and drops
The gaily decorated basket loading predetermined quantity silicon chip, to predetermined temperature, is transferred in Woolen-making liquid, instead by temperature by actuating device
Certain time crystal silicon surface is answered to obtain the matte of myrmekitic texture.Silicon chip after making herbs into wool is transferred to by the gaily decorated basket
One tank 12 is removed the acid solution on crystal silicon surface.Process for etching groove 11 wherein also including, Woolen-making liquid is defeated
Send device, according to the batch of reaction, there is automatic fluid filling function so that the concentration of making herbs into wool liquid is at predetermined model
In enclosing.
Rinse bath 2 includes cleaning groove 21 and the second tank arranged along the direction of operating D of described crystal silicon
22.The akaline liquid of predetermined concentration is added in cleaning groove 21.By actuating device, crystal silicon is passed
It is passed in cleaning groove 21, removes the porous silicon on crystal silicon surface, neutralize residual acid.It is transferred to second again
In tank 22, remove the akaline liquid on crystal silicon surface.
Rear treating groove 3 includes the aftertreatment technology groove 31 and the 3rd arranged along the direction of operating D of described crystal silicon
Tank 32.Hydrochloric acid and the Fluohydric acid. of predetermined concentration is added in aftertreatment technology groove 31.Pass through actuating device
51, crystal silicon is transferred in aftertreatment technology groove 31, removes metal impurities and the oxide on crystal silicon surface,
Make silicon chip more dehydration.Again crystal silicon is transferred in the 3rd tank 32, cleans crystal silicon surface with deionized water
Acid solution.
Drying tank 14 uses heater and air blast mode to heat, and adding thermal medium is air.Deionized water will be used
The crystal silicon cleaned is transferred in drying tank 4 crystal silicon is dried process, it is ensured that crystal silicon surface does not exist water
Vestige.
Embodiment 3
In another particular embodiment of the invention, its place same as in Example 1 does not repeats at this, only
It is illustrated with different places.
Metal catalytic for monocrystalline polysilicon etches making herbs into wool, and during making herbs into wool, process for etching groove 11 adds
Enter acid Woolen-making liquid, and remain to predetermined temperature, then blasted bubble by bubbling device picture acidity Woolen-making liquid.
By actuating device 51, the gaily decorated basket loading predetermined quantity silicon chip is transferred in Woolen-making liquid, reacts certain time,
Silicon face obtains suede structure (nanostructured, micrometer structure, submicrometer structure etc.).By the silicon after making herbs into wool
Sheet is transferred in the first tank 12 by the gaily decorated basket, removes the acid solution on crystal silicon surface.Wherein process for etching
Groove 11 also includes Woolen-making liquid conveyer device, according to the batch of reaction, there is automatic fluid filling function so that system
The concentration of floss liquid is in predetermined scope.
Rinse bath 2 includes cleaning groove 21 and the second tank arranged along the direction of operating D of described crystal silicon
22；Also include the ultrasonic cleaning equipment being positioned in cleaning groove 21.Cleaning groove 21 adds
The nitric acid of predetermined concentration.By actuating device, crystal silicon is transferred in cleaning groove 21, molten at nitric acid
Under liquid and ultrasonic cleaning effect, the residual metal on crystal silicon surface it is oxidized to metal ion and enters salpeter solution
In.The most again crystal silicon is transferred in the second tank 22, removes the acidic liquid on crystal silicon surface.
Rear treating groove 3 includes the aftertreatment technology groove 31 and the 3rd arranged along the direction of operating D of described crystal silicon
Tank 32.Hydrochloric acid and the Fluohydric acid. of predetermined concentration is added in aftertreatment technology groove 31.By actuating device,
Crystal silicon is transferred in aftertreatment technology groove 31, removes metal impurities and the oxide on crystal silicon surface, make silicon
Sheet more dehydration.Again crystal silicon is transferred in the 3rd tank 32, cleans the acid on crystal silicon surface with deionized water
Liquid.
Drying tank 4 uses heater and air blast mode to heat, and adding thermal medium is air.Will be clear with deionized water
The crystal silicon washed is transferred in drying tank 4 crystal silicon is dried process, it is ensured that crystal silicon surface does not exist washmarking
Mark.
A kind of chain type crystal silicon etching device that the present invention provides, can be used for monocrystal silicon and the system of polysilicon industrialization
In floss technique, it is also possible to being applied in metal catalytic etching process for etching, universal performance is good, solves existing
The single problem of etching device purposes.
The preparation method of a kind of crystal silicon making herbs into wool that the present invention provides, technique is simple, it is easy to operation, it is adaptable to single
Crystal silicon and the industrialization of polysilicon process for etching.
So far, although those skilled in the art will appreciate that and the most detailed illustrate and describing the present invention's
Exemplary embodiment, but, without departing from the spirit and scope of the present invention, still can be according to the present invention
Disclosure directly determines or derives other variations or modifications of many meeting the principle of the invention.Therefore,
The scope of the present invention is it is understood that and regard as covering other variations or modifications all these.
Claims (10)
1. a chain type crystal silicon etching device, it is characterised in that include along described crystal silicon direction of operating successively
Spaced texturing slot, rinse bath, rear treating groove, drying tank and the linked transmission for the transmission gaily decorated basket
System, the described gaily decorated basket is used for loading silicon chip, described linked transmission system include described texturing slot, rinse bath,
The independent actuating device that in rear treating groove and drying tank, each cell body is respectively provided with.
Chain type crystal silicon etching device the most according to claim 1, it is characterised in that described texturing slot,
Rinse bath, rear treating groove and drying tank be provided with in each cell body transmission motor, described texturing slot, rinse bath,
In rear treating groove and drying tank, each cell body top is provided with live roller, described live roller and described transmission
Motor connects, for the gaily decorated basket described in transmission；Preferably, described live roller is provided with for placing
State gaily decorated basket transmission band.
Chain type crystal silicon etching device the most according to claim 1 and 2, it is characterised in that described each
The actuating device being independently arranged in cell body cooperates, and forms the complete of a direction of operating along described crystal silicon
Linked transmission bar so that the described gaily decorated basket drives to described texturing slot, cleaning successively along described linked transmission bar
Groove, rear treating groove and drying tank；Described silicon chip vertically puts into the described gaily decorated basket, and the direction of described silicon chip is with described
The direction of linked transmission drive system is identical；Alternatively, the quantity of described linked transmission bar is one or many
Bar.
4. according to the chain type crystal silicon etching device according to any one of claim 1-3, it is characterised in that institute
In the texturing slot stated, rinse bath, rear treating groove, drying tank, each cell body selects the material of acid-fast alkali-proof simultaneously
Make, the receiving space size of described each cell body, including the degree of depth of cell body, the length of cell body, cell body
Width is according to designed by the size and number of the crystal silicon of a batch processing.
5. according to the chain type crystal silicon etching device according to any one of claim 1-4, it is characterised in that institute
State process for etching groove and the first tank that texturing slot includes arranging along the direction of operating of described crystal silicon；Described making herbs into wool
Technology groove and the first tank are flow structure, and medicinal liquid overflows to water jacket from inside groove surrounding, then by water jacket by following
Medicinal liquid is transmitted back in groove bottom inside groove by ring pump, forms circulation.
6. according to the chain type crystal silicon etching device according to any one of claim 1-5, it is characterised in that institute
State temperature control equipment that process for etching groove includes being located therein, bubbling device, Woolen-making liquid concentration detection apparatus
With one or more in Woolen-making liquid conveyer device；Wherein, described temperature control equipment is used for controlling described
The temperature of Woolen-making liquid in process for etching groove；Described Woolen-making liquid concentration detection apparatus is for detecting each of Woolen-making liquid
The concentration of composition, including silver ion, copper ion, the detection device of fluorion；Described Woolen-making liquid carries
Device is for carrying Woolen-making liquid in described process for etching groove so that the concentration of making herbs into wool liquid is in predetermined scope
In.
7. according to the chain type crystal silicon etching device according to any one of claim 1-4, it is characterised in that institute
State cleaning groove and the second tank that rinse bath includes arranging along the direction of operating of described crystal silicon；Alternatively,
What described cleaning groove included being located therein ultrasonic cleaning equipment.
8. according to the chain type crystal silicon etching device according to any one of claim 1-4, it is characterised in that institute
State aftertreatment technology groove and the second tank that rear treating groove includes arranging along the direction of operating of described crystal silicon.
9. according to the chain type crystal silicon etching device according to any one of claim 1-4, it is characterised in that institute
State heater and aerator that drying tank includes being located therein.
10. the preparation method of a crystal silicon making herbs into wool, it is characterised in that the preparation method of described crystal silicon making herbs into wool is adopted
With chain type crystal silicon etching device as claimed in any one of claims 1-9 wherein, its step includes:
S1, in described process for etching groove add Woolen-making liquid, be heated to predetermined temperature, passed by described chain type
The gaily decorated basket loading predetermined quantity silicon chip is transferred in Woolen-making liquid by dynamic system, after the reaction scheduled time, by making herbs into wool
After silicon chip by the gaily decorated basket be transferred in described first tank remove crystal silicon surface Woolen-making liquid；
S2, in described cleaning groove add cleanout fluid, by described linked transmission system by described loading
The gaily decorated basket of predetermined quantity silicon chip is transferred in described cleaning groove, after going the removal of impurity, is transferred to described second
In tank, remove the cleanout fluid on crystal silicon surface；
S3, in the rear process technology groove add aftertreatment fluid, by described linked transmission system by described
The gaily decorated basket loading predetermined quantity silicon chip is transferred in described aftertreatment technology groove, and the metal removing crystal silicon surface is miscellaneous
After matter and oxide, crystal silicon is transferred in described 3rd tank, after cleaning crystal silicon surface with deionized water
Treatment fluid；
S4, will clean with deionized water after crystal silicon be transferred in described drying tank crystal silicon is dried place
Reason.
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| CN109860083A (en) * | 2019-02-21 | 2019-06-07 | 中国科学院物理研究所 | For the chain equipment of crystal silicon making herbs into wool and the preparation method of single side inverted pyramid making herbs into wool |
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