CN105914439A - Substrate integrated waveguide (SIW) H-plane self-bias isolator based on soft magnetic nano wire array - Google Patents
Substrate integrated waveguide (SIW) H-plane self-bias isolator based on soft magnetic nano wire array Download PDFInfo
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- CN105914439A CN105914439A CN201610341781.XA CN201610341781A CN105914439A CN 105914439 A CN105914439 A CN 105914439A CN 201610341781 A CN201610341781 A CN 201610341781A CN 105914439 A CN105914439 A CN 105914439A
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- wire array
- soft magnetism
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- waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
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Abstract
The invention discloses a substrate integrated waveguide (SIW) H-plane self-bias isolator based on a soft magnetic nano wire array, which relates to a microwave device. The substrate integrated waveguide (SIW) H-plane self-bias isolator based on the soft magnetic nano wire array comprises an SIW transmission line and four orderly soft magnetic nano wire array bars arranged inside the transmission line, wherein the SIW transmission line comprises a dielectric substrate; the dielectric constant of the dielectric substrate material is between 8 and 16; metal layers are arranged on the upper surface and the lower surface of the dielectric substrate respectively; two rows of parallel conductive through holes arranged in the dielectric substrate form two through hole edges of the waveguide; each orderly soft magnetic nano wire array bar is long strip-shaped and is arranged between the substrate and the surface metal layer and attached to the metal layers on the upper surface and the lower surface, the long edge of the orderly soft magnetic nano wire array bar is parallel to the two through hole edges of the waveguide, spontaneous magnetization directions of two orderly soft magnetic nano wire array bars close to one side of the waveguide are upward, and spontaneous magnetization directions of two orderly soft magnetic nano wire array bars close to the other side of the waveguide are downward. The substrate integrated waveguide (SIW) H-plane self-bias isolator based on soft magnetic nano wire array is small in size, simple in structure, simple in processing and is easily integrated with a planar microwave circuit.
Description
Technical field
The present invention relates to novel microwave device based on Magnetic Nanowire Arrays.
Background technology
Microwave isolator is a kind of Two-port netwerk device with one-way transmission feature, is widely used
In radar and communication system.Along with microwave communication, the high-tech such as satellite communication and electronic countermeasure
The fast development of technology, proposes higher requirement to microwave isolator, it is desirable to it has high work
Make frequency range, wide working band and operating temperature range, little device volume and easy and plane
The features such as circuit is integrated.
There is polytype ferrite isolator on the market, resonance isolator is wherein to apply relatively
For a kind of widely, resonance isolator is based on ferrite near gyromagnetic resonance point, front reversely
The electromagnetic wave propagated has what the effect of different attenuation constants built.Resonance isolator is usual
Ferrite sheet or bar by being placed on side in waveguide are constituted, and place according to ferrite sheet or bar
Orientation difference, is divided into E face and H face structure.Compared to E face structure, H face isolator and waveguide
Contact area is bigger, it is possible to accommodate bigger power.The isolation of E face/H face isolator and ferrum
The length of oxysome sheet or bar is directly proportional, it means that for obtain bigger isolation need to increase every
Length from device.The length of isolator can be reduced at waveguide lateral symmetry placement ferrite sheet or bar
Degree, but traditional ferrite isolator cannot realize automatic biasing, is generally both needed to additional permanent magnet
Thering is provided bias-field, and waveguide both sides need to apply rightabout external magnetic field, this is in actual production
Relatively difficult to achieve, so rarely occur on the market waveguide lateral symmetry load ferrite sheet or
The isolator of bar, mostly is and loads 1 or 2 ferrite sheet or bar in waveguide side.The most additional
Permanent magnet also can increase the weight and volume of isolator, hinders the development of isolator miniaturization.
The ferrite isolator being applied to high band loads frequently with rectangular waveguide, this structure
Isolator is the most bulky, it is difficult to integrated with planar circuit, and due to Jie of high-k
The introducing of matter sheet can reduce higher mode cut-off frequency, affects bandwidth of operation, it is impossible to meeting reality should
With to broadband, miniaturization, integrated, the requirement of high-performance isolator.
Summary of the invention
The technical problem to be solved is to provide and a kind of can be operated in having of X-band
Wide working band, it is easy to integrated small size high-performance isolator.
The present invention solves described technical problem and employed technical scheme comprise that, based on magnetic Nano linear array
The H face automatic biasing isolator of the substrate integration wave-guide (SIW) of row, it is characterised in that include SIW
Transmission line and the 4 orderly soft magnetism nano-wire array bars being placed in transmission line, SIW transmission line
Including medium substrate, the dielectric constant of medium substrate material between 8-16, medium substrate
Upper and lower surface be respectively equipped with metal level, two rows being arranged in medium substrate are parallel
Conductive through hole constitutes two through hole limits of waveguide；Soft magnetism nano-wire array bar is strip in order,
It is arranged between substrate and surface metal-layer, and is attached at upper and lower surface metal level, orderly soft magnetism
The long limit of nano-wire array bar is parallel with the two of waveguide through hole limits, near the two panels of waveguide side
The spontaneous manetization direction of soft magnetism nano-wire array bar is upwards in order, near the two of waveguide opposite side
The spontaneous manetization direction of sheet orderly soft magnetism nano-wire array bar is downward.
Further, orderly soft magnetism nano-wire array bar totally 4, it is divided into two groups, often group two,
Two groups are for being symmetrical set, and the orderly soft magnetism nano-wire array bar in each group is symmetrical above and below
Arrange.
Constitute a length of 40-160um of orderly magnetic nanometer of orderly Magnetic Nanowire Arrays bar,
Material is Fe, Co, Ni, the alloy containing Fe, the alloy containing Co or containing the alloy of Ni.
Described orderly Magnetic Nanowire Arrays bar is at Woelm Alumina by electrochemical deposition method
Template deposits orderly Magnetic Nanowire Arrays obtain.Porous alumina formwork thickness is
50-200um, hole diameter is 60-150nm, and void ratio is 50-80%.
The invention has the beneficial effects as follows that proposition is a kind of and be operated in the integrated based on substrate of high band
The automatic biasing microwave isolator of waveguide.It is little that this isolator has volume, simple in construction, processing
Easily, the advantages such as easy and planar microwave circuit is integrated.
Accompanying drawing explanation
Fig. 1 is the structural representation (axonometric chart) of the present invention.
Fig. 2 is the structural representation (front view) of the present invention.
Fig. 3 be in alumina formwork deposit ferrum (Fe) ordered nano linear array pcrmeability spectrum and
Dielectric constant is composed, and this Data Source is in the high frequency performance measured data of orderly Fe nano-wire array；
Fig. 4 is surface sweeping Electronic Speculum (SEM) image of porous alumina formwork
Fig. 5 is the sample longitudinal profile (SEM image) that deposition has Fe nano-wire array；
Fig. 6 is X-band automatic biasing isolator S parameter simulation result curve chart；
Fig. 7 is the standing-wave ratio curve chart of X-band automatic biasing isolator；
Fig. 8 is basic mode and the higher mode propagation constant curve chart of X-band automatic biasing isolator.
Detailed description of the invention
The present invention includes that one section of SIW transmission line and symmetrically placed in transmission line substrate 4 have
Sequence soft magnetism nano-wire array bar.Its SIW transmission line includes the upper table of medium substrate, medium substrate
The conductive through hole of the left and right sides in face and the conductive metal layer of lower surface, medium substrate；Two rows lead
Electric through-hole constitutes two limits of waveguide, herein referred as through hole limit.Soft magnetism nano-wire array bar in order
For rectangular structure, be embedded in substrate, be attached to upper and lower surface metal level respectively, and with lead
Electric through-hole is parallel, and wherein 2 chip arrays bar spontaneous manetization directions, left side are upward, right side 2 chip arrays bar
Spontaneous manetization is directed downward.
Soft magnetic materials nano-wire array bar is at Woelm Alumina by electrochemical deposition method in order
Depositing soft magnetic materials (such as ferrum, cobalt, nickel and alloy thereof) in template to obtain, soft magnetic materials is with many
Porous aluminum oxide template uses as an entirety, this material near gyromagnetic resonance point, front reversely
The electromagnetic wave propagated has different attenuation constants, utilizes this effect can prepare isolator, this material
The gyromagnetic resonance dot frequency of material is the operating frequency of isolator.
Soft magnetism nano-wire array bar has relatively large anisotropy field and bigger remanence ratio, not in order
In the case of applying external magnetic field, magnetic moment can be consistently oriented along nano wire direction, can realize self-bias
Put.Its gyromagnetic resonance point under spontaneous manetization state reaches several GHz to tens of GHz, can be used for making
The isolator of standby high band.Although soft magnetic materials is mostly good conductor, but because of the geometry of nano wire
Size has less eddy-current loss much smaller than skin depth.
Porous alumina formwork thickness used is 50-200um, and hole diameter is 60-150nm, hole
Gap is than for 50-80%；Soft magnetic materials nanowire length is 40-160um in order, and material is Fe, Co,
Ni and alloy thereof.
By controlling the size of substrate integration wave-guide so that it is be only capable of propagating TE in working frequency range10
The electromagnetic wave of pattern, substrate integration wave-guide can be equivalent to rectangular waveguide, and its equivalent formulation is:
A=w-1.08d^2/s+0.1d^2/w, wherein a is rectangular waveguide width, and w is substrate integration wave-guide
Width, s is substrate integration wave-guide conductive through hole spacing, and d is that substrate integration wave-guide conductive through hole is straight
Footpath, it is considered to processing, decay and the characteristic such as energy leakage, basic size should meet: s/d < 2,
d/w<0.1.The dielectric constant of medium substrate material is between 8-16, and this dielectric constant is with soft
The dielectric constant of magnetic material nano linear array bar is close, can effectively reduce reflection loss.
The gyromagnet of the spacing and orderly soft magnetism nano-wire array bar that change conductive copper hole, both sides is total to
Shaking and a little can be designed that the microwave isolator of different operating frequency range, gyromagnetic resonance point can be by selecting
The porous alumina formwork of different aperture ratio or the different soft magnetic materials of deposition obtain.
Embodiment:
Now being operated in X-band with one, working band is the integrated based on substrate of 9.1-10GHz
It is expanded on further as a example by the H face automatic biasing isolator of waveguide.The present embodiment is merely to illustrate this
Bright rather than limit the scope of the present invention, those skilled in the art's various forms to the present invention
Equivalent modifications all fall within the application claims limited range.
The present embodiment provides one to be loaded with ordered magnetism nano-wire array based on substrate integration wave-guide
Automatic biasing microwave isolator, as shown in Figure 1, 2, including upper and lower surface metal level 1,
Conductive through hole 2, medium substrate 3 and 4 orderly Magnetic Nanowire Arrays bars 4.
Used by the present invention, orderly Magnetic Nanowire Arrays is for by electrochemical deposition method at thickness to be
70um, void ratio be 60% porous alumina formwork in deposit Fe nano wire and prepare, and survey
Obtaining nanowire length and be about 60um, diameter is about 85nm, and remanent magnetism (4 π Mr) is 4200 Gausses
(Gauss), susceptibility spectrum and dielectric constant are composed as shown in Figure 3.
Each several part parameter is as follows:
The thickness of upper and lower surface metal level is 0.1mm, and width is 8mm, and material is copper；
Medium substrate material is RO3010, and dielectric constant is 10.2；
Conductive through hole height is 0.5mm, a diameter of 0.6mm, and pitch of holes is 1mm, duct width w
For 7.28mm；
Magnetic Nanowire Arrays bar length l is 10mm in order, and width is 0.5mm, and thickness is
0.1mm, spacing u of adjacent array bar is 2.5mm, the spontaneous manetization direction of left side 2 chip arrays bar
Upward, the spontaneous manetization of right side 2 chip arrays bar is directed downward.
In conjunction with Fig. 1,2, model can be built in HFSS by above-mentioned parameter, simulation result is such as
Shown in Fig. 6-8, this isolator is-0.72dB-0.86dB at the insertion loss of 9.1GHz～10GHz,
Isolation is-20dB～-31dB, and standing-wave ratio is about 1.1, and bandwidth of operation is 0.9GHz, at X ripple
Higher mode does not all occur in Duan.Result shows, this isolator has less volume, and volume is only
For 10mm × 8mm × 0.7mm, there is isolation performance and the bandwidth of operation of excellence simultaneously.
Claims (5)
1. the substrate integration wave-guide H face automatic biasing isolator of soft magnetism nano-wire array, it is characterised in that
Including SIW transmission line and the 4 orderly soft magnetism nano-wire array bars being placed in transmission line, SIW
Transmission line includes medium substrate, and the dielectric constant of medium substrate material, between 8-16, is situated between
The upper and lower surface of matter substrate is respectively equipped with metal level, two rows being arranged in medium substrate
Parallel conductive through hole constitutes two through hole limits of waveguide；Soft magnetism nano-wire array bar is for long in order
Strip, is arranged between substrate and surface metal-layer, and is attached at upper and lower surface metal level, has
The long limit of sequence soft magnetism nano-wire array bar is parallel with the two of waveguide through hole limits, near waveguide side
The spontaneous manetization direction of two panels orderly soft magnetism nano-wire array bar be upwards, near waveguide another
The spontaneous manetization direction of the two panels orderly soft magnetism nano-wire array bar of side is downward.
2. the substrate integration wave-guide H face of soft magnetism nano-wire array as claimed in claim 1 is certainly
Biasing isolator, it is characterised in that soft magnetism nano-wire array bar totally 4 in order, is divided into two groups,
Often group two, two orderly soft magnetism nano-wire arrays organized for being symmetrical set, in each group
Bar setting symmetrical above and below.
3. the substrate integration wave-guide H face of soft magnetism nano-wire array as claimed in claim 1 is certainly
Biasing isolator, it is characterised in that the ordered magnetism that has constituting orderly Magnetic Nanowire Arrays bar is received
The a length of 40-160um of rice noodle, material is Fe, Co, Ni, alloy containing Fe, containing Co's
Alloy or the alloy containing Ni.
4. the substrate integration wave-guide H face of soft magnetism nano-wire array as claimed in claim 1 is certainly
Biasing isolator, it is characterised in that described orderly Magnetic Nanowire Arrays bar is to pass through electrochemistry
Sedimentation deposits orderly Magnetic Nanowire Arrays in porous alumina formwork and obtains.
5. the substrate integration wave-guide H face self-bias of soft magnetism nano-wire array as claimed in claim 4
Put isolator, it is characterised in that porous alumina formwork thickness is 50-200um, hole diameter
For 60-150nm, void ratio is 50-80%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610341781.XA CN105914439B (en) | 2016-05-23 | 2016-05-23 | The face the substrate integration wave-guide H automatic biasing isolator of soft magnetism nano-wire array |
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| CN201610341781.XA CN105914439B (en) | 2016-05-23 | 2016-05-23 | The face the substrate integration wave-guide H automatic biasing isolator of soft magnetism nano-wire array |
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| CN105914439B CN105914439B (en) | 2019-03-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288742A (en) * | 2017-12-13 | 2018-07-17 | 成都恒高科技有限公司 | Radio frequency isolation grid and signal isolation method, radio frequency isolation transmission circuit and transmission method |
| CN111224234A (en) * | 2018-11-26 | 2020-06-02 | 信思优有限公司 | Multi-port antenna integrated with low loss and flexible transmission line for millimeter wave frequency band |
| CN114361754A (en) * | 2022-01-10 | 2022-04-15 | 电子科技大学 | X-waveband magnetic control frequency-adjustable directional coupler |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594761A (en) * | 2013-11-21 | 2014-02-19 | 电子科技大学 | Substrate integrated waveguide ferrite switch |
| CN104577281A (en) * | 2015-01-21 | 2015-04-29 | 南京大学 | Microwave isolator based on substrate integration waveguide loaded with ferrite |
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2016
- 2016-05-23 CN CN201610341781.XA patent/CN105914439B/en not_active Expired - Fee Related
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| CN103594761A (en) * | 2013-11-21 | 2014-02-19 | 电子科技大学 | Substrate integrated waveguide ferrite switch |
| CN104577281A (en) * | 2015-01-21 | 2015-04-29 | 南京大学 | Microwave isolator based on substrate integration waveguide loaded with ferrite |
Non-Patent Citations (2)
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| ANTHONY GHIOTTO 等: ""Ferrite-Loaded Substrate Integrated Waveguide Switch"", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
| SIMON HEMOUR 等: ""Low magnetic biased SIW-based isolator"", 《2014 IEEE 15TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON) 》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288742A (en) * | 2017-12-13 | 2018-07-17 | 成都恒高科技有限公司 | Radio frequency isolation grid and signal isolation method, radio frequency isolation transmission circuit and transmission method |
| CN108288742B (en) * | 2017-12-13 | 2021-02-12 | 成都四相致新科技有限公司 | Radio frequency isolation gate, signal isolation method, radio frequency isolation transmission circuit and transmission method |
| CN111224234A (en) * | 2018-11-26 | 2020-06-02 | 信思优有限公司 | Multi-port antenna integrated with low loss and flexible transmission line for millimeter wave frequency band |
| CN111224234B (en) * | 2018-11-26 | 2022-08-30 | 信思优有限责任公司 | Multi-port antenna integrated with low loss and flexible transmission line for millimeter wave frequency band |
| CN114361754A (en) * | 2022-01-10 | 2022-04-15 | 电子科技大学 | X-waveband magnetic control frequency-adjustable directional coupler |
| CN114361754B (en) * | 2022-01-10 | 2022-10-14 | 电子科技大学 | X-waveband magnetic control frequency-adjustable directional coupler |
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| CN105914439B (en) | 2019-03-15 |
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Granted publication date: 20190315 Termination date: 20200523 |