CN105914223B - The manufacturing method and display panel of display panel - Google Patents
The manufacturing method and display panel of display panel Download PDFInfo
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- CN105914223B CN105914223B CN201610290086.5A CN201610290086A CN105914223B CN 105914223 B CN105914223 B CN 105914223B CN 201610290086 A CN201610290086 A CN 201610290086A CN 105914223 B CN105914223 B CN 105914223B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of manufacturing method of display panel and display panels, wherein this method comprises: providing substrate；The pixel confining layer with multiple openings and the insulated column in the pixel confining layer are formed on the substrate；Deposit forms first electrode layer in the opening；Luminescent layer is formed in the first electrode layer；The second electrode lay is formed on the light-emitting layer.The problem of technical solution provided by the invention can solve in existing display panel manufacturing process, reflecting electrode quality decline, and reduce process flow, reduce production cost.
Description
Technical field
The present embodiments relate to display technology more particularly to the manufacturing methods and display panel of a kind of display panel.
Background technique
Organic Light Emitting Diode (OLED) have that self-luminous, low in energy consumption, reaction speed is very fast, contrast is higher and visual angle compared with
The features such as wide, is applied in display technology of new generation, is with a wide range of applications.
Existing OLED preparation flow, after the completion of planarization layer, substrate whole face is deposited using physical sputtering method to be reflected
Electrode film layer carries out photoetching and acid solution etching again later, then completes two layers of organic film, i.e. pixel defining layer and insulated column layer
Photoetching and be heating and curing, after the completion of pixel defining layer and the process of insulated column layer, just carry out luminescent material vapor deposition.
In OLED preparation process on existing display panel, reflecting electrode whole face deposition, light requirement is carved and ability after acid solution etching
Pixel confining layer can be formed, therefore reflective electrode surface and side may all be influenced by acid liquid corrosion, and prepared by reflecting electrode
The problems such as being accomplished to the placement before luminescent material is deposited, will cause the oxidation of reflecting electrode, causes OLED performance to decline.
Summary of the invention
The invention discloses the manufacturing method of display panel and display panels, to solve in manufacturing process to reflection
The influence of electrode leads to quality decline problem.
In a first aspect, the embodiment of the invention provides a kind of manufacturing methods of display panel, comprising:
Substrate is provided；
On the substrate formed have multiple openings pixel confining layer and in the pixel confining layer every
From column；
Deposit forms first electrode layer in the opening；
Luminescent layer is formed in the first electrode layer；
The second electrode lay is formed on the light-emitting layer.
Second aspect, the embodiment of the invention also provides a kind of display panels, by the display panel in above-mentioned first aspect
Manufacturing method be fabricated.
The present invention is by forming pixel confining layer and after the insulated column in pixel confining layer, forming the first electricity
Pole layer can solve asking for the electrode quality decline that pixel confining layer forming process uses photoetching process to cause first electrode layer
Topic, such as the problem of the etching acid solution used in photoetching process and heat curing process cause the quality decline of electrode.In addition,
Deposit forms first electrode layer in pixel confining layer is open, and needs to be formed the using the techniques such as lithography and etching with the prior art
One electrode layer is compared, it is possible to reduce process flow reduces production cost.
Detailed description of the invention
Fig. 1 a is the flow diagram of the manufacturing method of the first display panel provided in an embodiment of the present invention；
Fig. 1 b-1e is the sectional view of each step counter structure of production method of the display panel in Fig. 1 a；
Fig. 2 is a kind of structural representation for display panel that display panel manufacturing method provided in an embodiment of the present invention is formed
Figure；
Fig. 3 is the structural representation for another display panel that display panel manufacturing method provided in an embodiment of the present invention is formed
Figure；
Fig. 4 a is that the structure for the passive type display panel that display panel manufacturing method provided in an embodiment of the present invention is formed is shown
It is intended to；
Fig. 4 b is the flow diagram of the manufacturing method of passive type display panel shown in Fig. 4 a；
Fig. 4 c-4e is the schematic diagram of each step counter structure of production method of the display panel in Fig. 4 b；
Fig. 5 a is that the structure for the active display panel that display panel manufacturing method provided in an embodiment of the present invention is formed is shown
It is intended to；
Fig. 5 b is the flow diagram of the manufacturing method of active display panel shown in Fig. 5 a；
Fig. 5 c-5h is the sectional view of each step counter structure of production method of the display panel in Fig. 5 b.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 a is a kind of flow diagram of the manufacturing method of display panel provided in an embodiment of the present invention, and Fig. 1 b-1e is
The sectional view of each step counter structure of the production method of display panel in Fig. 1 a.It is each below with reference to the production method of display panel
The production method of display panel provided in an embodiment of the present invention is discussed in detail in the sectional view of step counter structure.It, should referring to Fig. 1 a
Method specifically comprises the following steps:
S110, substrate is provided.
The substrate is preferably glass substrate.
S120, the pixel confining layer with multiple openings is formed on the substrate and is located in the pixel confining layer
Insulated column.
Referring to Fig. 1 b, being formed by photoetching and etching technics in substrate 11, there is the pixel of multiple openings 122 to limit
Given layer 121, and the insulated column 13 above pixel confining layer 121.Pixel confining layer 121 is for limiting multiple pixel lists
Member, wherein the corresponding pixel unit of each opening 122.To enhance stability, in the pixel limit for completing that there are multiple openings 122
The technique that is heating and curing can also be carried out after given layer 121 and insulated column 13.The material of pixel confining layer 121 and insulated column 13
For insulating materials, any insulating materials appropriate known in the art is used equally for the pixel confining layer 121 and insulated column 13.
Such as pixel confining layer 121 and insulated column 13 can also be organic insulating material.
It should be noted that pixel confining layer 121 and insulated column 13 with multiple openings 122 can be in same production works
It is made, such as can be formed simultaneously with multiple openings by photoetching processes such as exposure, development and etchings of same material in skill
122 pixel confining layer 121 and the insulated column 13 in pixel confining layer 121.Can also in technique twice independent shape
At, i.e., by exposure, development and etching etc. photoetching processes formed have it is multiple opening 122 pixel confining layer 121 after, lead to again
The photoetching processes such as overexposure, development and etching form insulated column 13 in pixel confining layer 121.Fig. 1 b is illustratively used two
The pixel confining layer 121 with multiple openings 122 and the insulated column in pixel confining layer 121 are independently formed in secondary technique
13。
S130, deposit forms first electrode layer in the opening.
Referring to Fig. 1 c, mask plate can be used, deposit forms first electrode layer in the opening 122 of pixel confining layer 121
14.Specifically, first electrode layer 14 can be formed in opening 122 by vapor deposition or sputtering deposit technique.
S140, luminescent layer is formed in the first electrode layer.
Referring to Fig. 1 d, can be formed in first electrode layer 14 by vapor deposition, sputtering deposit or spin-on deposition technique
Luminescent layer 15.Specifically, luminescent layer 15 can be luminous organic material.
S150, the second electrode lay is formed on the light-emitting layer.
Referring to Fig. 1 e, the second electrode lay 16 can be formed on luminescent layer 15 using evaporation process.
In the present embodiment, due to forming pixel confining layer and being formed after the insulated column in pixel confining layer
First electrode layer, compared with the prior art in be initially formed first electrode layer, re-form pixel confining layer and be located at pixel limit
Insulated column on layer can solve under the electrode quality that pixel confining layer forming process causes first electrode layer using photoetching process
The problem of drop.Such as the etching acid solution that photoetching process during preparing pixel confining layer and insulated column uses is consolidated with heating
The problem of changing quality decline (oxidation, vulcanization and the rough surface increase etc.) for causing first electrode layer.The present embodiment is in pixel
Deposit forms first electrode layer in confining layers opening, and is formed in the prior art using techniques such as film forming, exposure, development and etchings
Electrode layer not only can simplify technique, and can be to avoid the bad shadow that acid solution generates first electrode layer in etching process
It rings, such as cavity etc. is generated to first electrode layer burn into.In addition, forming the technique stream of first electrode layer in the embodiment of the present invention
Journey is adjacent with the process flow of luminescent layer is formed, therefore after deposit forms first electrode layer, the preparation of subsequent luminescent layer can also
It is formed with consecutive deposition, reduces exposure duration of the first electrode layer in external environment, solve first electrode layer because outside
The problems such as aoxidizing and vulcanize caused by single dwell course in portion's environment.Therefore display panel provided in an embodiment of the present invention
Manufacturing method improves properties of product and yield, reduces process flow, reduces production cost.
On the basis of the above embodiments, due to forming pixel confining layer 121, the 13, first electricity of separation layer on the substrate 11
Before pole layer 14, luminescent layer 15 and the second electrode lay 16, it is also possible to form other function film layer, such as some metals draw
Line.The formation of these functional film layers can cause surface irregularity, and then influence the display effect of subsequent display panel.Therefore, originally
Inventive embodiments preferably form the pixel confining layer with multiple openings in step S120, on the substrate and are located at institute
Before stating the insulated column in pixel confining layer, further includes: form planarization layer on the substrate.The material of planarization layer is also
Insulating materials.In preparation process flow, planarization layer can use individual manufacturing process.To reduce manufacturing process, improve
Production efficiency can also in same manufacture craft by same material be made planarization layer and with it is multiple opening 122 pixel limit
Given layer 121.Further, it is also possible to which planarization layer, the picture with multiple openings 122 is made by same material in same manufacture craft
Plain confining layers 121, and the insulated column 13 in pixel confining layer 121.
In an embodiment of the present embodiment, referring to fig. 2, first electrode layer 15 is metallic reflector, can be used
The high material of magnesium silver isoreflectance.The second electrode lay 16 is transparency conducting layer, concretely Indium-tin Oxide Transparent Conductive Film.Due to
Metallic reflector has the function of reflected light, the light that luminescent layer 15 generates, after the reflection of first electrode layer 14, from second electrode
Layer 16 projects.Arrow in figure represents the light emission direction of display panel.As shown in Figure 2, display panel provided in this embodiment is
Emission structure at top.
In the another embodiment of the present embodiment, referring to Fig. 3, first electrode layer 14 is transparency conducting layer, described second
Electrode layer 16 is metallic reflector.Relative to the light that above-mentioned emission structure at top, luminescent layer 15 generate, reflected through the second electrode lay 16
Afterwards, it is projected from first electrode layer 14.Arrow in figure represents the light emission direction of display panel.From the figure 3, it may be seen that the present embodiment provides
Display panel be bottom emitting structure.
Planarization layer 17 is illustratively shown in Fig. 2 and Fig. 3.
It is shown it should be noted that the manufacturing method of display panel provided in an embodiment of the present invention can prepare active OLED
Panel can also prepare passive type OLED display panel.
Fig. 4 a is that the structure for the passive type display panel that display panel manufacturing method provided in an embodiment of the present invention is formed is shown
It is intended to.Fig. 4 b is the flow diagram of the manufacturing method of passive type display panel shown in Fig. 4 a.Fig. 4 c- Fig. 4 e is aobvious in Fig. 4 b
Show the schematic diagram of each step counter structure of the production method of panel.Display panel structure in a referring to fig. 4, with above-described embodiment
Unlike, first electrode layer 14 includes multiple first sub-electrodes 141 arranged in parallel.The second electrode lay 16 includes multiple parallel
The second sub electrode 161 of arrangement, the first sub-electrode 141 and the insulation of the second sub electrode 161 intersect.B referring to fig. 4, this method
Specifically comprise the following steps:
S210, substrate is provided.
S220, planarization layer is formed on the substrate.
S230, the pixel confining layer with multiple openings is formed on the planarization layer and is located at pixel restriction
Insulated column on layer.
C referring to fig. 4 is formed after planarization layer 17 on the substrate 11, and being formed on planarization layer 17 has multiple openings
122 pixel confining layer 121, and the insulated column 13 in pixel confining layer 121.
S240, deposit forms first electrode layer in the opening, wherein the first electrode layer includes multiple parallels
First sub-electrode of column.
D referring to fig. 4, deposit forms first electrode layer 14, the first electrode layer 14 of formation in the opening of pixel confining layer
Including multiple first sub-electrodes 141 arranged in parallel.
S250, luminescent layer is formed in the first electrode layer.
E referring to fig. 4 forms luminescent layer 15 in first electrode layer 14.
S260, the second electrode lay is formed on the light-emitting layer, wherein the second electrode lay includes multiple arranged in parallel
Two sub-electrodes.
A referring to fig. 4, forms the second electrode lay 16 on luminescent layer 15, and the second electrode lay 16 of formation includes multiple parallel
The second sub electrode 161 of arrangement.First sub-electrode 141 and 161 cross arrangement of second sub electrode.
In the passive type display panel that the above method is formed, display panel includes N row second sub electrode and M column the first son electricity
Pole (5 row second sub electrodes and 5 the first sub-electrodes of column are illustratively arranged in Fig. 4 a).By the way of progressive scan, cyclically give
Every row second electrode applies pulse, while applying drive current to all the first sub-electrodes of column, to realize pixel line by line
Display.
Fig. 5 a is that the structure for the active display panel that display panel manufacturing method provided in an embodiment of the present invention is formed is shown
It is intended to.Fig. 5 b is the flow diagram of the manufacturing method of active display panel shown in Fig. 5 a.Fig. 5 c- Fig. 5 h is aobvious in Fig. 5 b
Show the sectional view of each step counter structure of the production method of panel.
Referring to Fig. 5 a, unlike the display panel structure in above-described embodiment, active display panel further include
Transistor array 18 is formed on the substrate.First sub-electrode 141 of first electrode layer 14 including matrix arrangement, and every 1 the
One sub-electrode 141 is electrically connected with a transistor.The second electrode lay 16 is plane-shape electrode (hardware and software platform layer, pixel confining layer and isolation
Column is not shown).Referring to Fig. 5 b, this method specifically comprises the following steps:
S310, substrate is provided.
S320, transistor array is formed on the substrate.
Referring to Fig. 5 c, transistor array 18 can be formed using photoetching process on the substrate 11.
S330, planarization layer is formed in the transistor array.
Referring to Fig. 5 d, planarization layer 17 is formed in transistor array 18.
S340, the pixel confining layer with multiple openings is formed on the planarization layer and is located at pixel restriction
Insulated column on layer.
Referring to Fig. 5 e, can be formed by photoetching processes such as exposure, development and etchings in planarization layer 17 has multiple open
The pixel confining layer 121 of mouth 122 and the insulated column 13 in pixel confining layer 121.
S350, deposit forms first electrode layer in the opening, wherein the first electrode layer includes matrix arrangement
The first sub-electrode, and each first sub-electrode is electrically connected with a transistor.
Referring to Fig. 5 f, deposit forms first electrode layer 14 in pixel confining layer opening 122.First electrode layer 14 includes square
First sub-electrode 141 of configuration arrangement.Every one first sub-electrode 141 passes through via hole and transistor company on planarization layer 17
It connects.
S360, luminescent layer is formed in the first electrode layer.
Referring to Fig. 5 g, luminescent layer 15 is formed in first electrode layer 14.
S370, the second electrode lay is formed on the light-emitting layer, the second electrode lay is plane-shape electrode.
Referring to Fig. 5 h, the second electrode lay 16 is formed on luminescent layer 15, the second electrode lay 16 is plane-shape electrode
In the active display panel that the above method is formed, the first sub-electrode in the opening 122 of each pixel confining layer 121
A 141 corresponding pixel units, by controlling opening and disconnecting for each transistor, to the first sub-electrode being connect with transistor
141 apply driving current, and the corresponding pixel unit of opening 122 of control pixel confining layer 121 issues the light of corresponding color, can
Each first sub-electrode 141 is independently adjusted and be controlled.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (12)
1. a kind of manufacturing method of display panel characterized by comprising
Substrate is provided；
The pixel confining layer with multiple openings and the insulated column in the pixel confining layer are formed on the substrate；
Deposit forms first electrode layer in the opening；
Luminescent layer is formed in the first electrode layer；
The second electrode lay is formed on the light-emitting layer；
Planarization layer is additionally provided between the pixel confining layer and the substrate；
The planarization layer, the pixel confining layer with multiple openings and the insulated column in same manufacture craft by
Same material is made；
Wherein, the deposit in the opening forms the process flow of first electrode layer and described in the first electrode layer
The process flow for forming luminescent layer is adjacent.
2. the method according to claim 1, wherein the first electrode layer is metallic reflector；Described second
Electrode layer is transparency conducting layer.
3. the method according to claim 1, wherein the first electrode layer be transparency conducting layer, described second
Electrode is metallic reflector.
4. the method according to claim 1, wherein it is described in the opening deposit form first electrode layer,
Include:
By vapor deposition or sputtering deposit technique, first electrode layer is formed in the opening.
5. the method according to claim 1, wherein described form luminescent layer, packet in the first electrode layer
It includes:
By vapor deposition, sputtering deposit or spin-on deposition technique, luminescent layer is formed in the first electrode layer.
6. the method according to claim 1, wherein being formed on the substrate, there is the pixel of multiple openings to limit
Given layer and before the insulated column in the pixel confining layer, further includes:
Planarization layer is formed on the substrate.
7. the method according to claim 1, wherein before forming the insulated column further include:
Planarization layer and the pixel confining layer with multiple openings are made by same material in same manufacture craft,
In, the pixel confining layer with multiple openings is located above the planarization layer.
8. the method according to claim 1, wherein the pixel confining layer and the insulated column are in same production
It is made in technique of same material.
9. the method according to claim 1, wherein the luminescent layer is luminous organic material.
10. the method according to claim 1, wherein the first electrode layer includes multiple arranged in parallel
One sub-electrode, the second electrode lay include multiple second sub electrodes arranged in parallel, first sub-electrode and described second
Sub-electrode insulation intersects.
11. the method according to claim 1, wherein forming the pixel with multiple openings on the substrate
Confining layers and before the insulated column in the pixel confining layer, further include forming transistor array on the substrate；
Wherein, the first electrode layer includes the first sub-electrode of matrix arrangement, and each first sub-electrode and one brilliant
The electrical connection of body pipe, the second electrode lay are plane-shape electrode.
12. a kind of display panel, which is characterized in that be fabricated by the described in any item methods of claim 1-11.
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| CN107393946B (en) | 2017-07-31 | 2020-08-11 | 京东方科技集团股份有限公司 | Organic light-emitting diode display panel and manufacturing method thereof |
| CN109427846B (en) * | 2017-08-28 | 2021-07-27 | 上海和辉光电股份有限公司 | Array substrate and manufacturing method thereof, display panel and display device |
| CN107565040A (en) * | 2017-08-30 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | Oled substrate and preparation method thereof |
| CN108598274A (en) * | 2018-05-15 | 2018-09-28 | 上海瀚莅电子科技有限公司 | QLED light-emitting display devices and preparation method thereof |
| CN108832009A (en) * | 2018-05-29 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of preparation method of inkjet printing AMOLED display panel |
| US10692945B2 (en) | 2018-05-29 | 2020-06-23 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Manufacturing method for an inkjet printing AMOLED display panel |
| US10651250B2 (en) | 2018-06-25 | 2020-05-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and method for manufacturing same |
| CN108922867A (en) * | 2018-06-25 | 2018-11-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109065749A (en) * | 2018-07-23 | 2018-12-21 | 武汉华星光电半导体显示技术有限公司 | OLED display |
| CN110827762B (en) * | 2018-08-14 | 2021-07-09 | 云谷（固安）科技有限公司 | Display panel, display screen, control method of display screen and display terminal |
| CN111162189A (en) * | 2018-11-07 | 2020-05-15 | 广东聚华印刷显示技术有限公司 | Light-emitting device, preparation method thereof and mask |
| CN109585523B (en) * | 2019-01-03 | 2021-04-09 | 京东方科技集团股份有限公司 | Manufacturing method of pixel defining layer and display panel |
| CN110137226B (en) * | 2019-05-05 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | Substrate of passive type organic electroluminescent light-emitting diode, manufacturing method and stripping plate |
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Effective date of registration: 20211027 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 200120 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |