CN105914196A - Single-chip dual-direction IGBT single tube package structure - Google Patents
Single-chip dual-direction IGBT single tube package structure Download PDFInfo
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- CN105914196A CN105914196A CN201610292328.4A CN201610292328A CN105914196A CN 105914196 A CN105914196 A CN 105914196A CN 201610292328 A CN201610292328 A CN 201610292328A CN 105914196 A CN105914196 A CN 105914196A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4502—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention relates to a single-chip dual-direction IGBT single tube package structure. The structure comprises a single-chip dual-direction IGBT device, a bottom metal plate, an external pin and an insulation casing; the bottom metal plate covers and clings to the second emitter region of the single-chip dual-direction IGBT device, and the bottom metal plate and a second gate region keep proper insulation spacing; and each emitter region and each gate region of the single-chip dual-direction IGBT device are respectively connected with corresponding external pins; the insulation casing wraps the single-chip dual-direction IGBT device, and the lower surface of the bottom metal plate is exposed. The problem is solved that the single-chip dual-direction IGBT device is not easy to package caused by the feature of the two coplanar electrodes, the single-chip dual-direction IGBT single tube package structure is compatible with the shape of the single-chip dual-direction IGBT device, the package technology and the traditional separated reverse-blocking IGBT single tube, and compared with the dual-direction switch formed by two reverse-blocking IGBT single tube, the single-chip dual-direction IGBT single tube package structure is high in power density, is very suitable for high-performance electric power and electronic device and system, such as a matrix convertor and the like, and has a good application prospect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of single-chip two-way IGBT single tube
Encapsulating structure.
Background technology
At present, insulated gate bipolar transistor (IGBT) be one combine metal-oxide-
Semiconductor field effect transistor (MOSFET) and the power electronics of bipolar junction transistor advantage
Device, IGBT is widely used with the performance of its excellence, greatly improves electric power electricity
Sub-device and the performance of system.(AC-DC-AC converts traditional AC-DC-AC converter
Device), need jumbo capacitor to maintain the stable fortune of intermediate DC link (DC link)
OK so that the volume of changer, weight are the biggest.Additionally, compared with power device, electric capacity
The service life of device is the most not enough, thus have impact on reliability and the service life of changer.Hand over
Stream-AC converter (AC-AC changer) eliminates intermediate DC link, simultaneously to power device
Part proposes the two-way gate-controlled switch of new requirement.
Tradition reverse blocking IGBT can two-way blocking-up voltage, but can only one-way conduction electric current, as figure
Shown in 1, the two-way gate-controlled switch ability being made up of two antiparallel discrete reverse blocking IGBTs
Meet requirement；And this two-way gate-controlled switch also exists the deficiencies such as volume, weight is big, in certain journey
The performance of AC-AC changer is constrained on degree.Wherein, G is gate pole, and E is emitter stage, C
For colelctor electrode.
The appearance of the two-way IGBT device of single-chip solves this problem, and wherein, Fig. 2 is single
The schematic diagram of sheet two-way IGBT single tube, by controlling two doors of the two-way IGBT device of single-chip
Voltage between pole with corresponding two emitter stages, can realize electric current two-way admittance two-way with voltage
Block.
Wherein, the right side of Fig. 3-5 respectively traditional discrete formula reverse blocking IGBT device depending on, overlook
With elevational schematic view.As shown in figs 6-8, the upper surface of the two-way IGBT device of single-chip is provided with
First gate pole G1 and the first emitter E 1, corresponding therewith, upper surface the first gate pole district respectively and
First emitter region；The lower surface of the two-way IGBT device of single-chip be provided with the second gate pole G2 and
Second emitter E 2, corresponding therewith, lower surface the second gate pole district and the second emitter region respectively.
The research work of IGBT device two-way to single-chip is concentrated mainly on the structure of device at present
Optimize and in preparation technology, but for device characteristics, in conjunction with the application requirement of power electronic equipment,
The research work of its encapsulation technology is reported less.
Summary of the invention
(1) to solve the technical problem that
The technical problem to be solved in the present invention is to provide the envelope of a kind of single-chip two-way IGBT single tube
Assembling structure, it is achieved single-chip two-way IGBT single tube well packaged, solves the two-way IGBT of single-chip
The problem of encapsulation that what device " two electrodes are coplanar " this feature was brought be difficult to；Make single-chip double
Mutually compatible with traditional discrete formula reverse blocking IGBT single tube to the profile of IGBT single tube, packaging technology.
(2) technical scheme
In order to solve above-mentioned technical problem, the invention provides a kind of single-chip two-way IGBT single tube
Encapsulating structure, it include the two-way IGBT device of single-chip, bottom metal, external pin and
Insulation crust；Bottom metal covers and is close to the second emitter stage of the two-way IGBT device of single-chip
District is arranged；Bottom metal keeps insulation clearance with the second gate pole district；The two-way IGBT of single-chip
First gate pole of device, the first emitter stage, the second gate pole and the second emitter stage are respectively with corresponding
First gate lead, the first emitter stage pin, the second gate lead and the second emitter stage pin are even
Connect；Insulation crust is wrapped in the periphery of the two-way IGBT device of single-chip, the following table of bottom metal
Face is exposed.
Further, described second emitter stage pin is arranged in described bottom metal, and passes through
Bottom metal is connected with the second emitter stage.
Further, described first gate pole and the first emitter stage pass through metallic bond zygonema respectively with corresponding
Described first gate lead, first emitter stage pin connect.
Further, described bottom metal is provided with for fixing single-chip two-way IGBT single tube
Or the installation through hole of heat-transfer device.
Further, described bottom metal arranges opening at the second gate pole district corresponding position；Described
Opening coverage is more than the second gate pole district；By this opening, bottom metal and the second gate pole
District keeps insulation clearance.
Further, described bottom metal arranges groove at the second gate pole district corresponding position；Described
Groove coverage is more than the second gate pole district；By this groove, bottom metal and the second gate pole
District keeps insulation clearance.
Further, described second gate pole is respectively by the second gate metal bonding line and corresponding the
Two gate lead connect；Second gate metal bonding line after described opening or groove with second
Pole pin connects；Second gate lead and described first gate lead and the first emitter stage pin are also
Row is arranged.
Further, described external pin stretches out described insulation crust, and described external pin is by absolutely
Edge shell is fixed.
(3) beneficial effect
The technique scheme of the present invention has the advantages that the encapsulation knot that the present invention proposes
Structure, by being bonded in the upper and lower surface of the two-way IGBT device of single-chip, solves
What the two-way IGBT device of single-chip " two electrodes are coplanar " this feature was brought is difficult to encapsulation
Problem；Make the profile of single-chip two-way IGBT single tube, packaging technology and traditional discrete formula reverse blocking
Type IGBT single tube is mutually compatible, is highly suitable for High-performance power electronic installation and system, such as square
Configuration changers etc., have a good application prospect.
Accompanying drawing explanation
Fig. 1 is the principle of the two-way gate-controlled switch being made up of two antiparallel reverse blocking IGBTs
Figure；
Fig. 2 is the schematic diagram of single-chip two-way IGBT single tube；
Fig. 3 is the right side view of tradition reverse blocking IGBT device；
Fig. 4 is the top view of tradition reverse blocking IGBT device；
Fig. 5 is the upward view of tradition reverse blocking IGBT device；
Fig. 6 is the right side view of the two-way IGBT device of single-chip；
Fig. 7 is the top view of the two-way IGBT device of single-chip；
Fig. 8 is the upward view of the two-way IGBT device of single-chip；
Fig. 9 is the single-chip two-way IGBT device connection with bottom metal of the embodiment of the present invention
Structural representation；
Figure 10 is that the two-way IGBT device of single-chip of the embodiment of the present invention has encapsulated rear profile
Schematic three dimensional views；
Wherein, G: gate pole；E: emitter stage: C: colelctor electrode；G1: the first gate pole；
G2: the second gate pole；E1: the first emitter stage: the E2: the second emitter stage；J: external pin；
JG1: the first gate lead；JE1: the first emitter stage pin；JG2: the second gate lead；
JE2: the second emitter stage pin；1: the two-way IGBT device of single-chip；2: bottom metal
Plate；2a: install through hole；2b: opening；3: insulation crust；4: metallic bond zygonema.
Detailed description of the invention
With embodiment, embodiments of the present invention are described in further detail below in conjunction with the accompanying drawings.
Following example are used for illustrating the present invention, but can not be used for limiting the scope of the present invention.
In describing the invention, it should be noted that except as otherwise noted, " multiple " contain
Justice is two or more；Term " on ", D score, "left", "right", " interior ", " outward ",
" front end ", " rear end ", " head ", " afterbody " etc. instruction orientation or position relationship be based on
Orientation shown in the drawings or position relationship, be for only for ease of the description present invention and simplify description,
Rather than indicate or imply that the device of indication or element must have specific orientation, with specifically
Azimuth configuration and operation, be therefore not considered as limiting the invention.Additionally, term " the
One ", " second ", " the 3rd " etc. are only used for describing purpose, and it is not intended that instruction or hint
Relative importance.
In describing the invention, in addition it is also necessary to explanation, unless otherwise clear and definite regulation and limit
Fixed, term " is installed ", " being connected ", " connection " should be interpreted broadly, for example, it may be consolidate
Fixed connection, it is also possible to be to removably connect, or be integrally connected；Can be to be mechanically connected, also
It can be electrical connection；Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary.Right
For those of ordinary skill in the art, visual concrete condition understands that above-mentioned term is in the present invention
In concrete meaning.
As shown in figs. 9-10, the envelope of a kind of single-chip two-way IGBT single tube that the present embodiment provides
Assembling structure, it includes the two-way IGBT device of single-chip 1, bottom metal 2, external pin J
With insulation crust 3；By Type of Welding, bottom metal 2 covers and to be close to single-chip two-way
Second emitter region of IGBT device 1 is arranged；Bottom metal 2 and the second gate pole district keep suitable
Work as insulation clearance；First gate pole G1 of the two-way IGBT device of single-chip 1, the first emitter E 1,
Second gate pole G2 and the second emitter E 2 are drawn with corresponding external pin the first gate pole respectively
Foot JG1, the first emitter stage pin JE1, the second gate lead JG2 and the second emitter stage pin JE2
Connect；Insulation crust is wrapped in the periphery of the two-way IGBT device of single-chip, under bottom metal
Surface exposed.
Second emitter stage pin JE2 is welded in bottom metal 2, and by bottom metal 2
It is connected with the second emitter E 2.And the first gate pole G1, the first emitter E 1 and the second gate pole
G2 is connected with corresponding external pin by metallic bond zygonema 4 respectively.
It is provided with in bottom metal 2 for fixing single-chip two-way IGBT single tube or heat conduction dress
The installation through hole 2a put.
Bottom metal 2 arranges opening 2b at the second gate pole district corresponding position；Opening 2b shape with
Second gate pole district is consistent, and this opening coverage is more than the second gate pole district, this opening 2b natural shape
Become bottom metal 2 and the insulation clearance in the second gate pole district.Second gate pole G2 is respectively by second
Gate metal bonding line connects with the second corresponding gate lead；Second gate metal bonding line warp
It is connected with the second gate lead JG2 after opening 2b；Second gate lead JG2 and the first gate pole draw
Foot JG1, the first emitter stage pin JE1 and the second emitter stage pin JE2 are arranged side by side.Thus,
External pin structure is more neat.
The insulating forms of other forms can certainly be taked, if bottom metal is at the second gate pole
District's corresponding position is provided with groove, and groove coverage is more than the second gate pole district；By this groove,
Bottom metal keeps insulation clearance with the second gate pole district.
Insulation crust 3 is finally used to be wrapped in the periphery of the two-way IGBT device of single-chip 1, will be single
The two-way IGBT device of chip 1, bottom metal 2, metallic bond zygonema 4 and external pin J structure
Become an entirety, play the protection two-way IGBT device of single-chip 1 and the effect of electric insulation, but
The lower surface of bottom metal 2 exposes.External pin J stretches out insulation crust 3, and by insulation
Shell 3 is fixed.
Bottom metal 2 should have enough thickness and mechanical strength, meets its lower surface and makees
For the demand of single tube machinery installed surface, its lower surface also serves as the thermally-conductive interface of single tube simultaneously；
In embodiment the encapsulating structure of single-chip two-way IGBT single tube by device upper,
Lower two surfaces are bonded, and " two electrodes are altogether to solve the two-way IGBT device of single-chip
Face " this feature bring be difficult to encapsulation problem；Make single-chip two-way IGBT single tube
Profile, packaging technology are mutually compatible with traditional discrete formula reverse blocking IGBT single tube, and by two
The two-way switch that reverse blocking IGBT single tube is constituted is compared, and power density is higher.
Embodiments of the invention are given for the sake of example and description, and are not nothing left
Leakage or limit the invention to disclosed form.Many modifications and variations are for this area
It is apparent from for those of ordinary skill.Selecting and describing embodiment is to more preferably illustrate
The principle of the present invention and actual application, and make those of ordinary skill in the art it will be appreciated that this
Invent thus design the various embodiments with various amendments being suitable to special-purpose.
Claims (8)
1. the encapsulating structure of a single-chip two-way IGBT single tube, it is characterised in that it includes
The two-way IGBT device of single-chip, bottom metal, external pin and insulation crust；Bottom metal
Plate covers and is close to the second emitter region setting of the two-way IGBT device of single-chip；Bottom metal
Insulation clearance is kept with the second gate pole district；First gate pole of the two-way IGBT device of single-chip, first
Emitter stage, the second gate pole and the second emitter stage respectively with the first corresponding gate lead, first
Emitter-base bandgap grading pin, the second gate lead and the second emitter stage pin connect；Insulation crust is wrapped in list
The periphery of the two-way IGBT device of chip, the lower surface of bottom metal exposes.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Being characterised by, described second emitter stage pin is arranged in described bottom metal, and passes through the end
Portion's metallic plate and the second emitter stage connect.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Being characterised by, described first gate pole and the first emitter stage pass through metallic bond zygonema respectively with corresponding
Described first gate lead and the first emitter stage pin connect.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Be characterised by, described bottom metal is provided with for fix single-chip two-way IGBT single tube or
The installation through hole of person's heat-transfer device.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Being characterised by, described bottom metal arranges opening at the second gate pole district corresponding position；Described open
Mouth coverage is more than the second gate pole district；By this opening, bottom metal and the second gate pole district
Keep insulation clearance.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Being characterised by, described bottom metal arranges groove at the second gate pole district corresponding position；Described recessed
Groove coverage is more than the second gate pole district；By this groove, bottom metal and the second gate pole district
Keep insulation clearance.
7. according to the encapsulating structure of the two-way IGBT single tube of the single-chip described in claim 5 or 6,
Described second gate pole is respectively by the second gate metal bonding line with the second corresponding gate lead even
Connect；Second gate metal bonding line is connected with the second gate lead after described opening or groove；
Second gate lead is arranged side by side with described first gate lead and the first emitter stage pin.
The encapsulating structure of single-chip the most according to claim 1 two-way IGBT single tube, its
Being characterised by, described external pin stretches out described insulation crust, and described external pin is by insulation
Shell is fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292328.4A CN105914196A (en) | 2016-05-05 | 2016-05-05 | Single-chip dual-direction IGBT single tube package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292328.4A CN105914196A (en) | 2016-05-05 | 2016-05-05 | Single-chip dual-direction IGBT single tube package structure |
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| CN201610292328.4A Pending CN105914196A (en) | 2016-05-05 | 2016-05-05 | Single-chip dual-direction IGBT single tube package structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133809A (en) * | 2020-09-06 | 2020-12-25 | 杭州金知科技有限公司 | Vertical packaging structure of full-color gallium nitride-based chip |
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|---|---|---|---|---|
| JPH09186281A (en) * | 1995-12-28 | 1997-07-15 | Fuji Electric Co Ltd | Lead frame |
| US20010019856A1 (en) * | 1998-05-27 | 2001-09-06 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
| CN1333566A (en) * | 2000-07-11 | 2002-01-30 | 株式会社东芝 | Semiconductor device |
| CN1434506A (en) * | 2002-01-25 | 2003-08-06 | 华瑞股份有限公司 | Wire solder free semiconductor device and package method thereof |
| CN101853831A (en) * | 2009-03-31 | 2010-10-06 | 夏普株式会社 | Semiconductor device and manufacture method thereof |
-
2016
- 2016-05-05 CN CN201610292328.4A patent/CN105914196A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09186281A (en) * | 1995-12-28 | 1997-07-15 | Fuji Electric Co Ltd | Lead frame |
| US20010019856A1 (en) * | 1998-05-27 | 2001-09-06 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
| CN1333566A (en) * | 2000-07-11 | 2002-01-30 | 株式会社东芝 | Semiconductor device |
| CN1434506A (en) * | 2002-01-25 | 2003-08-06 | 华瑞股份有限公司 | Wire solder free semiconductor device and package method thereof |
| CN101853831A (en) * | 2009-03-31 | 2010-10-06 | 夏普株式会社 | Semiconductor device and manufacture method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133809A (en) * | 2020-09-06 | 2020-12-25 | 杭州金知科技有限公司 | Vertical packaging structure of full-color gallium nitride-based chip |
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Effective date of abandoning: 20190628 |