CN105911490B - Magnetic field sensor with self-test resetting conducting wire - Google Patents
Magnetic field sensor with self-test resetting conducting wire Download PDFInfo
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- CN105911490B CN105911490B CN201610315860.3A CN201610315860A CN105911490B CN 105911490 B CN105911490 B CN 105911490B CN 201610315860 A CN201610315860 A CN 201610315860A CN 105911490 B CN105911490 B CN 105911490B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention provides a kind of magnetic field sensor, including：Substrate, with first surface；First bridge circuit, including multiple first magnetic field sensing cells；Second bridge circuit, it includes multiple second magnetic field sensing cells, the magnetosensitive axis of each first magnetic field sensing cell is mutually parallel and with first surface into the first predetermined angular, and the magnetosensitive axis of each second magnetic field sensing cell is mutually parallel and with first surface into the second predetermined angular；Self-test resets conducting wire, include being located on or below the first magnetic field sensing cell and first rake parallel with the magnetosensitive axis of the first magnetic field sensing cell, on or below the second magnetic field sensing cell and second rake parallel with the magnetosensitive axis of the second magnetic field sensing cell.Compared with prior art, the present invention is based on same self-test resetting conducting wires can generate along the magnetic field of the Z-direction perpendicular to chip surface for self-test, can also generate and be used to reset/reset again along the magnetic field in the magnetic easy axis direction of magnetic field sensing cell.
Description
【Technical field】
The present invention relates to magnetic field sensor, more particularly to a kind of magnetic field biography that can be realized to magnetic induction layer reset and self-test
Sensor.
【Background technology】
It has been applied very commonly currently based on the magnetic field sensor of magnetoresistance, such as anisotropic magnetoresistive (AMR) magnetic
Field sensor, giant magnetoresistance (GMR) magnetic field sensor and tunnel magneto (TMR) magnetic field sensor.
In general, based on the magnetic field sensor of magnetoresistance when magnetic direction and size change, device resistance can be with
Change.The structure of magnetic field sensor generally includes one layer of soft magnetic materials, such as iron, cobalt, nickel, ferro-cobalt boron alloy or dilval
(permalloy) etc..When magnetic direction and size change, the direction of magnetization of layer of soft magnetic material changes correspondingly, so as to cause electricity
The variation of resistance.
The exact value in magnetic field in order to obtain, the soft magnetosphere needs are reset before magnetic field sensor measurement.It is common
Method is to generate high-intensity magnetic field, so that base in the conducting wire close to the basic sensing unit of magnetic field sensor by high current
All magnetic domains of this sensing unit are all magnetized and are arranged along magnetic easy axis direction, and the direction of magnetic easy axis is by magnetic field sensor
The anisotropy of basic sensing unit determines.By controlling the sense of current flowed through on the conducting wire, the direction of magnetic domain can be with
The two opposite directions parallel along magnetic easy axis arrange.Usually this operation is referred to as resetting (SET) and reset again (RESET).
In addition to can be initialized to the magnetization of soft magnetosphere, SET/RESET may also help in the magnetization for restoring soft magnetosphere.It is if residing
Magnetic field sensor is interfered by extraneous high-intensity magnetic field, and the magnetic domain of the soft magnetosphere may not be restored to initial shape after interference magnetic field removes
State, so as to cause measurement error.By reset/resetting again, the arrangement of magnetic domain can be resumed.
It is continued to decline with the cost of magnetic field sensor chip, production test cost is in entire magnetic field sensor cost
Proportion is higher and higher.The especially production test of magnetic field sensor, other than needing the equipment for testing common electrical performance,
The equipment for generating test magnetic field, such as Helmholtz coil (Helmholtz coil) are there is a need for being able to, can be dramatically increased in this way
Cost.
If corresponding test can not need to complete on magnetic field sensor by externally-applied magnetic field generation device,
Cost can be greatly reduced in this way.For example, magnetic field sensor is made to be exposed in the magnetic field of a known dimensions, magnetic field sensor
Reading can calibrate sensitivity, error and other parameters compared with known magnetic field size.This known magnetic field can pass through
Another conducting wire close to magnetic field sensor generates.Because usually additional test magnetic field is along sensitive axis direction and and magnetic easy axis
Direction is vertical, it is therefore desirable to place two sets of independent conducting wires close to magnetic field sensor to complete SET/RESET and self-test.This is needed
Double layer of metal is added in production technology, additional metal deposit and photoetching process can increase production cost.
In addition, for the three-axis sensor of Single-Chip Integration, how Z axis of the magnetic susceptibility axis perpendicular to chip plane is sensed
Unit, which carries out self-test on chip, becomes a problem of bigger.
Therefore, it is necessary to a kind of improved technical solution is provided to solve the above problems.
【Invention content】
One of the objects of the present invention is to provide a kind of improved magnetic field sensors, and conducting wire is reset just based on same self-test
It can generate along the magnetic field of the Z-direction perpendicular to chip surface for self-test, the magnetic along magnetic field sensing cell can also be generated
The magnetic field of easy axis direction is used to reset/reset again.
To solve the above-mentioned problems, the present invention provides a kind of magnetic field sensor, including：Substrate, with first surface；
First bridge circuit, including multiple first magnetic field sensing cells；Second bridge circuit, including multiple second magnetic field sensing lists
Member, wherein the magnetic field sensing cell is respectively provided with magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, each magnetic field sensing list
The magnetic easy axis of member is parallel to each other, and the magnetosensitive axis of each first magnetic field sensing cell is mutually parallel and makes a reservation for first surface into first
Angle, the magnetosensitive axis of each second magnetic field sensing cell are mutually parallel and with first surface into the second predetermined angular；Self-test is reset
Conducting wire, including on or below the first magnetic field sensing cell and parallel with the magnetosensitive axis of first magnetic field sensing cell
The first rake, put down on or below the second magnetic field sensing cell and with the magnetosensitive axis of second magnetic field sensing cell
Capable the second rake, on the first surface of the substrate and the flat part parallel with the first surface of the substrate,
Wherein the first predetermined angular and the second predetermined angular are all higher than 0 degree and are less than 90 degree.
Further, the magnetic field sensor further includes：Multiple convex blocks on the first surface of the substrate, each
Convex block includes opposite the first inclined surface and the second inclined surface, and the first inclined surface is predetermined into first relative to first surface
Angle, the second inclined surface is relative to first surface into the second predetermined angular, and the convex block is lengthwise bar shaped, and extending direction is equal
It is parallel with the magnetic easy axis direction, the first magnetic field sensing cell and the first rake be located at the convex block the first inclined surface it
On, the second magnetic field sensing cell and the second rake are located on the second inclined surface of the convex block.
Further, the protrusion is trapezoidal cross-section, and with top surface, the self-test resetting conducting wire, which has further included, to be located at
On the top surface of the multiple convex block and the connecting portion parallel with the top surface, the connecting portion is in the first rake and second
Between the top of rake, there is flat part between the bottom of the first rake and the second rake.
Further, each protrusion is triangular cross section, and the first rake of the self-test resetting conducting wire inclines with second
The top of inclined portion is connected, and has flat part between the bottom of the first rake and the second rake.
Further, between the first inclined surface and the first rake, the second magnetic field passes the first magnetic field sensing cell
Feel unit positioned at the second inclined surface and the second rake between, alternatively, the first rake be located at the first magnetic field sensing cell with
Between first inclined surface, the second rake is located at the second magnetic field sensing cell between the second inclined surface.
Further, the magnetic field sensor further includes：It is set to the first magnetic field sensing cell, the second magnetic field sensing cell
Insulating layer between the self-test resetting conducting wire.
Further, self-test resetting conducting wire extends to form spiral-shaped, across multiple first magnetic field sensing cells and
Multiple second magnetic field sensing cells have the first connecting pin and second connection end.
Further, the magnetic field sensor have resetting/reset pattern and Auto-Sensing Mode again, reset/resetting mould again
During formula, make to flow through the first electric current on self-test resetting conducting wire, generate the first magnetic field, first magnetic field reset/reset again this
One magnetic field sensing cell and the second magnetic field sensing cell cause the magnetic of first magnetic field sensing cell and the second magnetic field sensing cell
Farmland direction returns to the direction of the magnetic easy axis；In Auto-Sensing Mode, make to flow through the second electricity of precognition on the self-test resetting conducting wire
Stream, generates the second magnetic field of precognition, which causes the magnetic resistance of the first magnetic field sensing cell and the second magnetic field sensing cell
It changes, so as to fulfill the self-test of Z axis magnetic field induction, Z axis is the axis perpendicular to first surface, which is less than first
Electric current.
Further, the magnetic field sensing cell include along its magnetic easy axis direction extension lengthwise magnetoresistive strip and formation with it is described
It is on magnetoresistive strip and with the magnetoresistive strip into several conductive bars being mutually parallel of predetermined angle, wherein the magnetoresistive strip by
Iron, cobalt, nickel, ferro-cobalt boron alloy or dilval are made.
Further, the magnetic field sensor further includes：Third bridge circuit, including multiple third magnetic field sensing lists
Member, wherein third magnetic field sensing cell have magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, each third magnetic field sensing
The magnetic easy axis of unit is parallel to each other and vertical with the magnetic easy axis of the first magnetic field sensing cell, the magnetic of each third magnetic field sensing cell
Quick axis is mutually parallel and parallel with first surface.
Further, the first predetermined angular and the second predetermined angular are all higher than 30 degree less than 50 degree.
Compared with prior art, setting in the present invention and the close adjacent self-test of magnetic field sensing cell of Y/Z axis are reset
Conducting wire can be generated along the magnetic field of the Z-direction perpendicular to chip surface for self-test, can also be generated along magnetic field sensing list
The magnetic field in the magnetic easy axis direction of member is used to reset/reset again.
【Description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 shows a kind of structure principle chart of triaxial magnetic field sensor in the present invention；
Fig. 2 shows the section views along hatching A-A of the Y/Z axis magnetic field sensors in the triaxial magnetic field sensor in Fig. 1
Schematic diagram；
Fig. 3 shows Y/Z axis magnetic field sensor in the triaxial magnetic field sensor in the present invention in one embodiment
Principle schematic diagram；
Fig. 4 shows the section view along hatching B-B of the Y/Z axis magnetic field sensors in the triaxial magnetic field sensor in Fig. 3
Schematic diagram.
【Specific embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to may be included at least one realization method of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise, herein
In connect, be connected, connecting expression be electrically connected word represent directly or indirectly to be electrical connected, being electrical connected indirectly refers to
It is electrical connected via another device or circuit.
Shown in please referring to Fig.1, for the principle schematic in the single-chip tri-axis magnetic field sensor 100 in the present invention.Please
Refering to what is shown in Fig. 2, the cuing open along hatching A-A it illustrates the Y/Z axis magnetic field sensors in the triaxial magnetic field sensor in Fig. 1
Depending on schematic diagram.
With reference to shown in Fig. 1 and Fig. 2, the triaxial magnetic field sensor 100 includes：Substrate 210 with first surface 211,
Multiple convex blocks 111, the first wheatstone bridge circuits, the second favour stone electricity being formed on the first surface 211 of the substrate 210
Bridge circuit and third wheatstone bridge circuits 120.
The substrate 210 can be silicon substrate, can also be referred to as substrate.
Each convex block 111 includes opposite the first inclined surface 1111 and the second inclined surface 1112.First inclined surface
1111 relative to first surface 211 into the first predetermined angular, the second inclined surface 1112 is pre- into second relative to first surface 211
Determine angle, the convex block is lengthwise bar shaped, their extending direction is mutually parallel.
First wheatstone bridge circuits include be formed on the first inclined surface 1111 of the convex block 111 multiple first
Magnetic field sensing cell 112, wherein there are one the first magnetic field sensing cells for setting on the first inclined surface 1111 of each convex block 111
112.First magnetic field sensing cell 112 has magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, each first magnetic field sensing
The magnetic easy axis of unit 112 is parallel to each other and parallel with the extending direction of the convex block 111, as shown in Figure 1, the first magnetic field sensing
The magnetic easy axis of unit 112 is parallel with X-axis.The magnetosensitive axis of each first magnetic field sensing cell 112 is mutually parallel and and first surface
211 into the first predetermined angular.
Second wheatstone bridge circuits include be formed on the second inclined surface 1112 of the convex block 111 multiple second
Magnetic field sensing cell 113.Second magnetic field sensing cell 113 has magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, each
The magnetic easy axis of second magnetic field sensing cell 113 is parallel to each other and parallel with the extending direction of the convex block 111, as shown in Figure 1,
The magnetic easy axis of second magnetic field sensing cell 113 is parallel with X-axis.The magnetosensitive axis of each second magnetic field sensing cell 113 is mutually parallel
And with first surface 211 into the second predetermined angular.
First predetermined angular and the second predetermined angular are all higher than 0 degree and are less than 90 degree.Preferably, the first predetermined angular and second
Predetermined angular is all higher than 30 degree and is less than 50 degree, such as 30 degree, 40 degree, 50 degree.
Third wheatstone bridge circuits 120 include multiple third magnetic field sensing cells 121, wherein third magnetic field sensing cell
121 have magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, and the magnetic easy axis of each third magnetic field sensing cell 121 is mutually equal
It goes and vertical with the magnetic easy axis of the first magnetic field sensing cell 112, the magnetosensitive axis of each third magnetic field sensing cell 121 is mutually parallel
It is and parallel with first surface 211.As shown in Figure 1, the magnetic easy axis of the third magnetic field sensing cell 121 is parallel with Y-axis, magnetosensitive
Axis is parallel with X-axis.
It is as shown in Figure 2, the triaxial magnetic field sensor 100 further included be formed in each magnetic field sensing cell 112,
Insulating layer 220 on 113 and 121.
Each magnetic field sensing cell is (including each first magnetic field sensing cell 112, each second magnetic field sensing cell 113
With each third magnetic field sensing cell 121) including extending lengthwise magnetoresistive strip along its magnetic easy axis direction and being formed and the magnetoresistive strip
On and with the magnetoresistive strip into several conductive bars being mutually parallel of predetermined angle, wherein the magnetoresistive strip by iron, cobalt,
Nickel, ferro-cobalt boron alloy or dilval are made.
As shown in Figure 1, first wheatstone bridge circuits have further included power end U1, ground terminal GND, the first output
Hold VO1+, second output terminal VO1-, each first magnetic field sensing cell 112 is connected to power end U1, ground terminal GND, first defeated
Between outlet VO1+, second output terminal VO1-.Second wheatstone bridge circuits further included power end U2, ground terminal GND,
First output terminal VO2+, second output terminal VO2-, each second magnetic field sensing cell 113 are connected to power end U2, ground terminal
Between GND, the first output terminal VO2+, second output terminal VO2-.The third wheatstone bridge circuits further included power end U3,
Ground terminal GND, the first output terminal VOX+, second output terminal VOX-, each third magnetic field sensing cell 121 are connected to power end
Between U3, ground terminal GND, the first output terminal VOX+, second output terminal VOX-.
Third wheatstone bridge circuits 120 can sense the magnetic field of X-direction, therefore it can also be referred to as X-axis magnetic field
Sensor.Assuming that its output signal is Sx, have：
[Sx]=[VOX+]-[VOX-].
It is assumed that the output signal of first wheatstone bridge circuits is S1, then have：
[S1]=[VO1+]-[VO1-].
It is assumed that the output signal of second wheatstone bridge circuits is S2, then have：
[S2]=[VO2+]-[VO2-].
First wheatstone bridge circuits and the second wheatstone bridge circuits can sense magnetic field and the Z axis of Y direction jointly
The magnetic field intensity signal Sy and Sz of the magnetic field in direction, Y-axis and Z axis being calculated by S1 and S2, therefore the first favour this
Energization bridge circuit and the second wheatstone bridge circuits may be collectively termed as Y/Z axis magnetic field sensors.A kind of calculating side is provided here
The embodiment of method：In U1 and U2 supply voltages under the same conditions, and the magnetic field of first and second wheatstone bridge circuits
Sensing unit sensitivity has under the same conditions:
[Sy]=[S1]-[S2]；
[Sz]=[S1]+[S2].
In Fig. 1, Y/Z axis magnetic field sensor and X-axis magnetic field sensor are integrated into same chip.
Fig. 3 shows Y/Z axis magnetic field sensor 110 ' in the triaxial magnetic field sensor in the present invention in one embodiment
In principle schematic diagram；Fig. 4 show the Y/Z axle sensors in the triaxial magnetic field sensor in Fig. 3 along hatching B-B
Schematic cross-sectional view.
Triaxial magnetic field sensor in Fig. 3 can be essentially identical with the triaxial magnetic field sensor in Fig. 1 in structure, also wraps
Include the substrate 210 with first surface 211, the multiple convex blocks 111 being formed on the first surface 211 of the substrate 210,
One wheatstone bridge circuits, the second wheatstone bridge circuits and third wheatstone bridge circuits (not shown).First favour stone electricity
Bridge circuit also include power end U1, ground terminal GND, the first output terminal VO1+, second output terminal VO1- and be connected to them it
Between multiple first magnetic field sensing cells 112, second wheatstone bridge circuits also include power end U2, ground terminal GND,
Multiple second magnetic field sensing cells 113 of first output terminal VO2+, second output terminal VO2- and connection between them.
The triaxial magnetic field sensor in triaxial magnetic field sensor and Fig. 1 in Fig. 3 the difference lies in：Three in Fig. 3
The self-test that axis magnetic field sensor is further included across the first wheatstone bridge circuits and the second wheatstone bridge circuits resets conducting wire
310。
The self-test resetting conducting wire 310 includes being located on the first magnetic field sensing cell 112 and is passed with first magnetic field
Feel parallel the first rake 311 of magnetosensitive axis of unit 112, on the second magnetic field sensing cell 112 and with described second
The second parallel rake 312 of the magnetosensitive axis of magnetic field sensing cell 112, on the first surface 211 of the substrate 210 simultaneously
The flat part 313 parallel with the first surface 211 of the substrate 210.Wherein insulating layer 220 is set to the first magnetic field sensing cell
112nd, between the second magnetic field sensing cell 113 and self-test resetting conducting wire 310.In this way, the first magnetic field sensing cell 112 and
One rake 311 is formed on the first inclined surface 1111 of the convex block 111, the second magnetic field sensing cell 113 and second
Rake 312 is formed on the second inclined surface 1111 of the convex block 111.
As shown in Figure 3, the protrusion 111 is trapezoidal cross-section, with top surface.The self-test resetting conducting wire 310 is also
Include on the top surface positioned at the multiple convex block 111 and the connecting portion 314 parallel with the top surface, the connecting portion 314
Between the top of the first rake 311 and the second rake 312, the bottom of the first rake 311 and the second rake 312
Between have flat part 313.In another embodiment, the protrusion is triangular cross section, and the self-test resetting at this time is led
First rake 311 of line 310 and the top of the second rake 312 are connected directly, the first rake 311 and the second rake
There is flat part 313 between 312 bottom.
Self-test resetting conducting wire 310 extend to form it is spiral-shaped, across multiple first magnetic field sensing cells 112 and multiple
Second magnetic field sensing cell 113 has the first connecting pin UC+ and second connection end UC-.
The triaxial magnetic field sensor has reset/resets pattern and Auto-Sensing Mode again.Resetting/reset pattern again when,
Make to flow through the first electric current on self-test resetting conducting wire 310, generate the first magnetic field at this time, the X-axis component resetting in first magnetic field/
112 and second magnetic field sensing cell 113 of the first magnetic field sensing cell is reset again so that first magnetic field sensing cell 112 and the
The magnetic domain direction of two magnetic field sensing cells 113 returns to the direction of the magnetic easy axis.In Auto-Sensing Mode, lead the self-test resetting
The second electric current of precognition is flowed through on line 310, generates the second magnetic field of precognition at this time, the z-component in second magnetic field causes first
The magnetic resistance of magnetic field sensing cell and the second magnetic field sensing cell changes, and so as to fulfill the self-test of Z axis, which is less than
First electric current.
The self-test resetting conducting wire 310 can be located on insulating layer 220, by semiconductor technology such as thin film deposition or electricity
Depositing process is formed.In another embodiment, the self-test resetting conducting wire 310, Zhi Hou can also be first formed on convex block 110
Insulation is formed into 220 on the self-test resetting conducting wire 310, re-forms the first magnetic field sensor unit 112 and the second magnetic field later
Sensor unit 113.
In this way, by the way that one layer of self-test is set to reset conducting wire 310, the first magnetic field sensing cell 112 and second can have both been realized
The resetting of magnetic field sensing cell 113/reset again, and can realize the Z axis self-test of Y/Z axis magnetic field sensors, design is simplified, is dropped
Low cost.
It should be pointed out that any change that one skilled in the art does the specific embodiment of the present invention
All without departing from the range of claims of the present invention.Correspondingly, the scope of the claims of the invention is also not merely limited to
In previous embodiment.
Claims (11)
1. a kind of magnetic field sensor, which is characterized in that it includes：
Substrate, with first surface；
First bridge circuit, including multiple first magnetic field sensing cells；
Second bridge circuit, including multiple second magnetic field sensing cells, wherein first magnetic field sensing cell and the second magnetic
Field sensing unit is respectively provided with magnetic easy axis and the magnetosensitive axis vertical with the magnetic easy axis, and the magnetic easy axis of each magnetic field sensing cell is mutual
Parallel, the magnetosensitive axis of each first magnetic field sensing cell is mutually parallel and with first surface into the first predetermined angular, and each second
The magnetosensitive axis of magnetic field sensing cell is mutually parallel and with first surface into the second predetermined angular；
Self-test reset conducting wire, include be located at the first magnetic field sensing cell on or below and with first magnetic field sensing cell
Parallel the first rake of magnetosensitive axis, on or below the second magnetic field sensing cell and with the second magnetic field sensing list
Parallel the second rake of magnetosensitive axis of member and on the first surface of the substrate and with the first table of the substrate
The parallel flat part in face,
Wherein the first predetermined angular and the second predetermined angular are all higher than 0 degree and are less than 90 degree.
2. magnetic field sensor according to claim 1, which is characterized in that it is further included：Positioned at the first table of the substrate
Multiple convex blocks on face,
Each convex block includes opposite the first inclined surface and the second inclined surface, the first inclined surface relative to first surface into
First predetermined angular, for the second inclined surface relative to first surface into the second predetermined angular, the convex block is lengthwise bar shaped, is prolonged
It is parallel with the magnetic easy axis direction to stretch direction,
First magnetic field sensing cell and the first rake are located on the first inclined surface of the convex block,
Second magnetic field sensing cell and the second rake are located on the second inclined surface of the convex block.
3. magnetic field sensor according to claim 2, which is characterized in that
The convex block is trapezoidal cross-section, with top surface,
The self-test resetting conducting wire further includes connection on the top surface of the multiple convex block and parallel with the top surface
Portion, the connecting portion between the top of the first rake and the second rake,
There is flat part between the bottom of first rake and the second rake.
4. magnetic field sensor according to claim 2, which is characterized in that
Each convex block is triangular cross section,
First rake of the self-test resetting conducting wire is connected with the top of the second rake,
There is flat part between the bottom of first rake and the second rake.
5. magnetic field sensor according to claim 2, which is characterized in that
For first magnetic field sensing cell between the first inclined surface and the first rake, the second magnetic field sensing cell is located at second
Between inclined surface and the second rake, alternatively,
For first rake between the first magnetic field sensing cell and the first inclined surface, the second rake is located at the second magnetic field biography
Unit is felt between the second inclined surface.
6. magnetic field sensor according to claim 1, which is characterized in that it is further included：
The insulating layer being set between the first magnetic field sensing cell, the second magnetic field sensing cell and self-test resetting conducting wire.
7. magnetic field sensor according to claim 1, which is characterized in that the self-test resetting conducting wire extends to form spiral shape
Shape across multiple first magnetic field sensing cells and multiple second magnetic field sensing cells, has the first connecting pin and the second connection
End.
8. magnetic field sensor according to claim 1, which is characterized in that it has reset/resets pattern and self-test mould again
Formula,
In resetting/reset pattern again, make to flow through the first electric current on self-test resetting conducting wire, generate the first magnetic field, this first
Magnetic field reset/resets first magnetic field sensing cell again and the second magnetic field sensing cell causes first magnetic field sensing cell and
The magnetic domain direction of two magnetic field sensing cells returns to the direction of the magnetic easy axis；
In Auto-Sensing Mode, make to flow through the second electric current of precognition on the self-test resetting conducting wire, generate the second magnetic field of precognition, it should
Second magnetic field causes the first magnetic field sensing cell and the magnetic resistance of the second magnetic field sensing cell to change, so as to fulfill Z axis magnetic field
The self-test of sensing, Z axis are the axis perpendicular to first surface,
Second electric current is less than the first electric current.
9. magnetic field sensor according to claim 1, which is characterized in that first magnetic field sensing cell and the second magnetic field
Sensing unit include along its magnetic easy axis direction extension lengthwise magnetoresistive strip and formed and the magnetoresistive strip on and with the magnetoresistive strip
Into several conductive bars being mutually parallel of predetermined angle, wherein the magnetoresistive strip is by iron, cobalt, nickel, ferro-cobalt boron alloy or ferronickel
Alloy is made.
10. magnetic field sensor according to claim 1, which is characterized in that it is further included：
Third bridge circuit, including multiple third magnetic field sensing cells, wherein third magnetic field sensing cell have magnetic easy axis and
The magnetosensitive axis vertical with the magnetic easy axis, the magnetic easy axis of each third magnetic field sensing cell it is parallel to each other and with the first magnetic field sensing
The magnetic easy axis of unit is vertical, and the magnetosensitive axis of each third magnetic field sensing cell is mutually parallel and parallel with first surface.
11. magnetic field sensor according to claim 1, which is characterized in that the first predetermined angular and the second predetermined angular are equal
It is less than 50 degree more than 30 degree.
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| JP2020513882A (en) * | 2016-12-19 | 2020-05-21 | ボストン サイエンティフィック サイムド，インコーポレイテッドＢｏｓｔｏｎ Ｓｃｉｅｎｔｉｆｉｃ Ｓｃｉｍｅｄ，Ｉｎｃ． | Superior axis navigation sensor |
| CN107305241B (en) * | 2017-06-26 | 2021-01-29 | 新纳传感***有限公司 | Magnetic sensing device and real-time self-checking method thereof |
| CN108363025B (en) * | 2018-05-14 | 2023-10-13 | 美新半导体（无锡）有限公司 | magnetic field sensor |
| CN110780243A (en) * | 2019-11-19 | 2020-02-11 | 中国电子科技集团公司第四十九研究所 | High-sensitivity micro magnetic sensing unit for underwater navigation, sensor comprising same and preparation method of sensing unit |
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