CN105911446B - IGBT ageing states monitoring method and device - Google Patents
IGBT ageing states monitoring method and device Download PDFInfo
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- CN105911446B CN105911446B CN201610223894.XA CN201610223894A CN105911446B CN 105911446 B CN105911446 B CN 105911446B CN 201610223894 A CN201610223894 A CN 201610223894A CN 105911446 B CN105911446 B CN 105911446B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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Abstract
IGBT ageing states monitoring method and device, method provided by the invention include：Normal voltage is exported by the voltage stabilizing chip in measuring circuit, when voltage stabilizing chip control signal is high level, measuring circuit outputting drive voltage makes IGBT to be measured be connected；Voltage stabilizing chip control signal is set to low level, it is zero to make voltage stabilizing chip output voltage, when IGBT gate voltages, which are down to, opens threshold voltage, it is zero to flow through IGBT collector currents, control driving voltage slowly continuously declines, and measuring circuit outputting drive voltage waveform and the corresponding collector current waveform of interception, obtain the transfer curve of IGBT to be measured；It regard the on state threshold voltage of the IGBT to be measured extracted by the transfer curve and mutual conductance as ageing state characteristic quantity, the ageing state of IBGT to be measured is monitored；The present invention has the characteristics that the ageing state situation fast and accurately to IGBT is detected.
Description
Technical field
The present invention relates to electronic technology field more particularly to a kind of IGBT ageing states monitoring method and devices.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), is energy transformation
With the core devices of transmission, as national strategy new industry, in rail traffic, intelligent grid, aerospace, electric vehicle
With new energy equipment etc. fields application it is extremely wide, IGBT module is most widely used power device, there is indispensable status.
In practice, since power converter works long hours under the bad working environments of a wide range of random fluctuation of processing power, make
Continue wide fluctuations at the junction temperature inside IGBT device, and then IGBT is made the case where ageing failure occur, as can monitoring in real time
The ageing state of IGBT, so that it may to replace the module close to ageing failure in time, and then avoid causing heavy losses.Existing IGBT
Aging monitoring technology uses the saturation voltage drop V under low current moreCE-sat, 100mA low currents are injected in IGBT saturation conductions, so
The V under the state is read afterwardsCE, but saturation conduction pressure drop, with respect to the variable quantity very little of ageing process, generally only more than ten mV are left
The right side, and the busbar voltage of current transformer measures the variable quantity of more than ten mV, this is to adopting generally in the thousands of volts of several hectovolts from upper kilovolt
Sample system requirements is very high, and therefore, there is an urgent need for a kind of methods of the ageing state of new quick and precisely detection IGBT, avoid measuring circuit
Influence to IGBT normal operations.
Invention content
In view of this, a kind of IGBT ageing states monitoring method of present invention offer and device, to solve the above problems.
IGBT ageing states monitoring method provided by the invention, including
A. normal voltage is exported by the voltage stabilizing chip in measuring circuit, when voltage stabilizing chip control signal is high level,
Measuring circuit outputting drive voltage makes IGBT to be measured be connected；
B. voltage stabilizing chip control signal is set to low level, it is zero to make voltage stabilizing chip output voltage, when IGBT gate voltages
It is down to when opening threshold voltage, it is zero to flow through IGBT collector currents, the survey that control driving voltage slowly continuously declines, and intercepts
Circuit output driving voltage waveform and corresponding collector current waveform are measured, the transfer curve of IGBT to be measured is obtained；
C. it regard the on state threshold voltage of the IGBT to be measured extracted by the transfer curve and mutual conductance as aging shape
State characteristic quantity is monitored the ageing state of IBGT to be measured.
Further, the driving voltage waveform and collector current waveform relationship such as following formula indicate：
Wherein, VgeIndicate gate voltage, ICIndicate collector current, KsatIndicate mutual conductance, VTHIndicate threshold value；
Driving voltage waveform and collector current Wave data to measurement carry out data fitting, obtain corresponding coefficient, meter
Calculate mutual conductance and threshold voltage.
Further, the measuring circuit and conventional driver circuits are connect by switching switch with IGBT to be measured, when to be measured
When IGBT is measured, by switch switch control measuring circuit connect with IGBT to be measured, simultaneously switch off conventional driver circuits and
IGBT connections to be measured switch to conventional driver circuits after being measured to IGBT to be measured.
Further, the output voltage values that the measuring circuit is controlled by changing the resistance value of digital regulation resistance are changed.
Further, when switching switching to measuring circuit, IGBT is off state, defeated by the voltage stabilizing chip
Go out pulsewidth drive voltage signal to turn it on, the pulsewidth drive voltage signal is narrow spaces drive voltage signal, and pulsewidth is believed
Number height is determined according to the gate drive voltage of IGBT.
Further, by IGBT bonding lines fall off the influence to the transfer curve variation, calculate different bonding lines
Fall off several corresponding mutual conductances and threshold voltage, judges the ageing state of IGBT.
The present invention also provides a kind of IGBT ageing states monitoring device, including measuring circuit, the measuring circuit includes
Voltage stabilizing chip is used for output pulse width drive voltage signal,
Collecting unit, for acquiring measuring circuit outputting drive voltage waveform and corresponding collector current waveform,
Gate voltage control unit, for making driving voltage slowly be carried out continuously variation,
Monitoring unit, for being obtained according to the measuring circuit outputting drive voltage waveform and corresponding collector current waveform
Take the transfer curve of IGBT to be measured, and the on state threshold voltage of the IGBT to be measured extracted and mutual conductance；
When voltage stabilizing chip control signal is high level, measuring circuit outputting drive voltage makes IGBT to be measured be connected, will be steady
Pressure chip controls signal is set to low level, and it is zero to make voltage stabilizing chip output voltage, is down to when IGBT gate voltages and opens threshold value electricity
When pressure, gate voltage control unit control driving voltage slowly continuously declines, and the measuring circuit outputting drive voltage wave of interception
Shape and corresponding collector current waveform, obtain the transfer curve of IGBT to be measured, will be carried by the transfer curve
The on state threshold voltage of the IGBT to be measured taken and mutual conductance supervise the ageing state of IBGT to be measured as ageing state characteristic quantity
It surveys.
Further, further include conventional driver circuits and switching switch, the conventional driver circuits and measuring circuit pass through double
Road switching switch is connect with IGBT to be measured, when being measured to IGBT to be measured, is switched control measuring circuit by switching and is waited for
IGBT connections are surveyed, conventional driver circuits is simultaneously switched off and is connect with IGBT to be measured, after being measured to IGBT to be measured, switch to routine
Driving circuit.
Further, further include digital regulation resistance, adjusted for output voltage, give regulator circuit output capacitance preliminary filling setting electricity
Pressure.
Beneficial effects of the present invention：IGBT ageing state monitoring devices in the present invention may be implemented to transmit IGBT special
The quick measurement of linearity curve, the aging characteristics of IGBT are extracted with this, and the ageing state of IGBT is obtained by aging characteristics
Information, to achieve the purpose that monitor IGBT ageing states；The present invention can be such that aging characteristics measuring circuit is driven with conventional
Free switching is carried out between circuit, conventional driver circuits are switched to after being quickly measured, and avoids measuring circuit to IGBT just
The influence often run, the present invention have the characteristics that the ageing state situation fast and accurately to IGBT is detected.
Description of the drawings
The invention will be further described with reference to the accompanying drawings and examples：
Fig. 1 is the principle of the present invention schematic diagram.
Fig. 2 is measuring circuit schematic diagram of the present invention.
Fig. 3 is the monitoring device structural schematic diagram of the present invention.
Fig. 4 is the driving narrow pulse signal waveform diagram of the present invention.
Fig. 5 is the IGBT gate drive voltage and collector current waveform diagram of the present invention.
Fig. 6 is measurement and the databook transfer curve contrast schematic diagram of the present invention.
Transfer curve schematic diagram when Fig. 7 is different bonding line number of fracture of the invention.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and examples：Fig. 1 is the principle of the present invention schematic diagram, Fig. 2
It is measuring circuit schematic diagram of the present invention, Fig. 3 is the monitoring device structural schematic diagram of the present invention, and Fig. 4 is the narrow arteries and veins of driving of the present invention
Signal waveform schematic diagram is rushed, Fig. 5 is the IGBT gate drive voltage and collector current waveform diagram of the present invention, and Fig. 6 is this
The measurement of invention and databook transfer curve contrast schematic diagram, Fig. 7 are transmitted when being different bonding line number of fracture of the invention
Characteristic curve schematic diagram.
As shown in figs. 1-7, the IGBT ageing state monitoring methods in the present embodiment, including
A. normal voltage is exported by the voltage stabilizing chip in measuring circuit, when voltage stabilizing chip control signal is high level,
Measuring circuit outputting drive voltage makes IGBT to be measured be connected；
B. voltage stabilizing chip control signal is set to low level, it is zero to make voltage stabilizing chip output voltage, when IGBT gate voltages
It is down to when opening threshold voltage, it is zero to flow through IGBT collector currents, the survey that control driving voltage slowly continuously declines, and intercepts
Circuit output driving voltage waveform and corresponding collector current waveform are measured, the transfer curve of IGBT to be measured is obtained；
C. it regard the on state threshold voltage of the IGBT to be measured extracted by the transfer curve and mutual conductance as aging shape
State characteristic quantity is monitored the ageing state of IBGT to be measured.
Measuring circuit and conventional driver circuits in the present embodiment are connect by switching switch with IGBT to be measured, when to be measured
When IGBT is measured, by switch switch control measuring circuit connect with IGBT to be measured, simultaneously switch off conventional driver circuits and
IGBT connections to be measured switch to conventional driver circuits after being measured to IGBT to be measured.During actual monitoring, at IGBT
When normal operating conditions, so that the gate pole of IGBT is connected to conventional driver circuits by switching switch, when work a period of time, need
When being measured to IGBT module ageing state (generally carried out when current transformer is shut down, when stopping such as electric vehicle, wind turbine because
When wind speed is not suitable for work and shuts down etc.), control switching switching measures station IGBT and is at this time to driving circuit is measured
Off state makes it normally export a narrow spaces drive voltage signal to one trigger signal of voltage stabilizing chip, as shown in figure 4,
The height of pulse width signal is determined according to the gate drive voltage of different IGBT.When voltage stabilizing chip control signal is high level,
Measuring circuit output conducting driving voltage, measures station IGBT conductings, and DC power supply exports fixed current value, flows through IGBT current collections
The electric current of pole increases, and when voltage stabilizing chip control signal is low level, voltage stabilizing chip output voltage is zero, as shown in Fig. 2, at this
In embodiment, the consecutive variations of driving voltage are realized using RC circuit discharging characteristics, at this time due to capacitance CgWith resistance Rg, IGBT
Gate voltage starts slowly to decline, and the collector current for flowing through IGBT also begins to slowly decline, when IGBT gate voltages drop to
When IGBT opens threshold voltage, the collector current for flowing through IGBT is zero.
As shown in figure 5, data acquisition is carried out to driving voltage waveform and collector current waveform by collecting unit, according to
Intercept the driving voltage waveform after measuring circuit outputting drive voltage is begun to decline and corresponding collector current waveform, you can
The transfer curve of IGBT is obtained, driving voltage waveform and collector current waveform relationship such as following formula indicate：
Wherein, VgeIndicate gate voltage, ICIndicate collector current, KsatIndicate mutual conductance, VTHIndicate threshold value
According to above-mentioned formula, using the data of driving voltage waveform and collector current waveform obtained by the measurement to formula
Carry out data fitting, you can obtain corresponding coefficient, mutual conductance and threshold value are then obtained according to coefficient.
In the present embodiment, using the IGBT of the FF50R12RT4 models of Infineon as experimental subjects, letter is opened in triggering
The narrow pulse signal of 1ms pulsewidths, gate voltage V number are sent out by DSPGEWith collector current ICWaveform carried out by data collecting card
Acquisition, the IGBT transfer curves surveyed in the present embodiment with the transfer curve comparison on databook as shown in fig. 6,
It can be seen that two curves are very close.
In the present embodiment, it is fallen off the variation of the influence to the transfer curve, is calculated different by IGBT bonding lines
Bonding line falls off several corresponding mutual conductances and threshold voltage, judges the ageing state of IGBT.Due to the aging of IGBT module
The bonding thread breakage that it can be made internal, therefore, the present embodiment simulates IGBT module by gradually cutting the bonding line of IGBT
Aging conditions, the transfer curve of IGBT is with bonding thread breakage situation of change as shown in fig. 7, then according to formula (1) to Fig. 7
Transfer curve carry out data fitting, fitting result is as shown in table 1, it can be seen that as bonding line falls off several increases,
Mutual conductance KsatWith threshold value VTHAll decline successively.
| Bonding line falls off number | 0 | 1 | 2 | 3 | 4 | 5 |
| Ksat(A/V2) | 4.88 | 3.74 | 3.68 | 3.63 | 3.59 | 3.25 |
| VTH(V) | 6.06 | 5.60 | 5.56 | 5.55 | 5.54 | 5.50 |
| R2 | 0.999 | 0.999 | 0.999 | 0.999 | 0.999 | 0.999 |
Table 1
Correspondingly, the present embodiment also provides a kind of IGBT ageing states monitoring device, including measuring circuit, the measurement electricity
Road includes
Voltage stabilizing chip is used for output pulse width drive voltage signal,
Collecting unit, for acquiring measuring circuit outputting drive voltage waveform and corresponding collector current waveform,
Gate voltage control unit, for making driving voltage slowly be carried out continuously variation,
Monitoring unit, for being obtained according to the measuring circuit outputting drive voltage waveform and corresponding collector current waveform
Take the transfer curve of IGBT to be measured, and the on state threshold voltage of the IGBT to be measured extracted and mutual conductance；
Voltage stabilizing chip in the present embodiment as shown in Figure 2 uses LM2678, when voltage stabilizing chip control signal is high level,
Measuring circuit outputting drive voltage makes IGBT to be measured be connected, and voltage stabilizing chip control signal is set to low level, keeps voltage stabilizing chip defeated
It is zero to go out voltage, and when IGBT gate voltages, which are down to, opens threshold voltage, it is slow that gate voltage control unit controls driving voltage
It is continuous to decline, and the measuring circuit outputting drive voltage waveform intercepted and corresponding collector current waveform, obtain IGBT to be measured
Transfer curve, the on state threshold voltage of the IGBT to be measured extracted by the transfer curve and mutual conductance are used as always
Change state characteristic quantity, is monitored the ageing state of IBGT to be measured.
As shown in Figure 1,3, further include that conventional driver circuits and switching switch, the conventional driver circuits and measuring circuit are logical
It crosses switching switch to connect with IGBT to be measured, when being measured to IGBT to be measured, switchs control measuring circuit by switching and wait for
IGBT connections are surveyed, conventional driver circuits is simultaneously switched off and is connect with IGBT to be measured, after being measured to IGBT to be measured, switch to routine
Driving circuit.
As shown in Fig. 2, further including digital regulation resistance, adjusted for output voltage, gives regulator circuit output capacitance preliminary filling one
Voltage is set, setting voltage swing is determined that the voltage value generally makes IGBT to be measured enter linear zone but do not enter by IGBT to be measured
Saturation region is advisable, and facilitates digital regulated carried driving output voltage by digital regulation resistance, can be directed to disparate modules and adjust conjunction
Suitable gate voltage makes IGBT module enter linear zone work without entering saturation region, limits the collector current of IGBT module
Maximum value, general control is suitable at 1.5 times of rated value.
Finally illustrate, the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although with reference to compared with
Good embodiment describes the invention in detail, it will be understood by those of ordinary skill in the art that, it can be to the skill of the present invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the right of invention.
Claims (9)
1. a kind of IGBT ageing states monitoring method, it is characterised in that：Including
A. normal voltage is exported by the voltage stabilizing chip in measuring circuit, when voltage stabilizing chip control signal is high level, measured
Circuit output driving voltage makes IGBT to be measured be connected；
B. voltage stabilizing chip control signal is set to low level, it is zero to make voltage stabilizing chip output voltage, when IGBT gate voltages are down to
When opening threshold voltage, it is zero to flow through IGBT collector currents, and control driving voltage slowly continuously declines, and the measurement electricity intercepted
Road outputting drive voltage waveform and corresponding collector current waveform, obtain the transfer curve of IGBT to be measured；
C. it regard the on state threshold voltage of the IGBT to be measured extracted by the transfer curve and mutual conductance as ageing state spy
Sign amount is monitored the ageing state of IBGT to be measured.
2. IGBT ageing states monitoring method according to claim 1, it is characterised in that：The driving voltage waveform sum aggregate
Electrode current waveform relationship such as following formula indicates：
Wherein, VgeIndicate gate voltage, ICIndicate collector current, KsatIndicate mutual conductance, VTHIndicate threshold value；
Driving voltage waveform to measurement and collector current Wave data carry out data fitting, obtain corresponding coefficient, calculate across
It leads and threshold voltage.
3. I GBT ageing state monitoring methods according to claim 1, it is characterised in that：The measuring circuit and routine
Driving circuit is connect by switching switch with I GBT to be measured, when being measured to I GBT to be measured, by switching switch control
Measuring circuit is connect with I GBT to be measured, is simultaneously switched off conventional driver circuits and is connect with I GBT to be measured, has been measured I GBT to be measured
Cheng Hou switches to conventional driver circuits.
4. I GBT ageing state monitoring methods according to claim 1, it is characterised in that：By changing digital regulation resistance
Resistance value control the output voltage values of the measuring circuit and be changed.
5. I GBT ageing state monitoring methods according to claim 1, it is characterised in that：When switching switching to survey
When measuring circuit, I GBT are off state, are turned it on by the voltage stabilizing chip output pulse width drive voltage signal, described
Pulsewidth drive voltage signal is narrow spaces drive voltage signal, and pulse width signal height is true according to the gate drive voltage of IGBT
It is fixed.
6. the IGBT ageing state monitoring methods according to claim 1-5 any claims, it is characterised in that：Pass through
IGBT bonding lines fall off the variation of the influence to the transfer curve, calculate different bonding lines and fall off several corresponding mutual conductances and threshold
Threshold voltage judges the ageing state of IGBT.
7. a kind of IGBT ageing states monitoring device, it is characterised in that：Including measuring circuit, the measuring circuit includes
Voltage stabilizing chip is used for output pulse width drive voltage signal,
Collecting unit, for acquiring measuring circuit outputting drive voltage waveform and corresponding collector current waveform,
Gate voltage control unit, for making driving voltage slowly be carried out continuously variation,
Monitoring unit, for being waited for according to the measuring circuit outputting drive voltage waveform and the acquisition of corresponding collector current waveform
Survey the transfer curve of IGBT, and the on state threshold voltage of the IGBT to be measured extracted and mutual conductance；
When voltage stabilizing chip control signal is high level, measuring circuit outputting drive voltage makes IGBT to be measured be connected, by voltage stabilizing core
Piece control signal is set to low level, and it is zero to make voltage stabilizing chip output voltage, when IGBT gate voltages, which are down to, opens threshold voltage,
The measuring circuit outputting drive voltage waveform and phase that gate voltage control unit control driving voltage slowly continuously declines, and intercepts
The collector current waveform answered, obtains the transfer curve of IGBT to be measured, is waited for what is extracted by the transfer curve
The on state threshold voltage of survey IGBT and mutual conductance are monitored the ageing state of IBGT to be measured as ageing state characteristic quantity.
8. IGBT ageing states monitoring device according to claim 7, it is characterised in that：Further include conventional driver circuits and
Switching switch, the conventional driver circuits and measuring circuit are connect by switching switch with I GBT to be measured, when to I GBT to be measured
When measuring, it is connect with IGBT to be measured by switching switch control measuring circuit, simultaneously switches off conventional driver circuits and I to be measured
GBT connections switch to conventional driver circuits after being measured to I GBT to be measured.
9. IGBT ageing states monitoring device according to claim 8, it is characterised in that：Further include digital regulation resistance, uses
It is adjusted in output voltage, voltage is set to regulator circuit output capacitance preliminary filling.
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| CN106771947B (en) * | 2016-11-25 | 2020-10-13 | 全球能源互联网研究院有限公司 | Detection circuit and detection method for IGBT surge current |
| CN107024649B (en) * | 2017-05-15 | 2023-06-30 | 扬州乔恒电子有限公司 | IGBT module characteristic aging device |
| US11677312B2 (en) * | 2018-01-26 | 2023-06-13 | Mitsubishi Electric Corporation | Semiconductor device and power converter |
| CN108982998B (en) * | 2018-07-12 | 2019-11-22 | 浙江大学 | A kind of detection circuit and detection method of on-line checking binding line ageing process |
| CN108919085B (en) * | 2018-10-17 | 2024-05-31 | 北京交通大学 | IGBT aging test circuit and method |
| WO2020095561A1 (en) * | 2018-11-06 | 2020-05-14 | 日立オートモティブシステムズ株式会社 | Load driving device, and transmission drive system |
| CN110133468A (en) * | 2019-05-30 | 2019-08-16 | 西南交通大学 | A kind of strong zygonema aging monitoring and assessing method of the IGBT based on multivariable |
| CN110221189B (en) | 2019-06-05 | 2020-07-17 | 合肥工业大学 | Method for monitoring on-line state of IGBT module bonding wire |
| CN111046529B (en) * | 2019-11-20 | 2022-11-04 | 中南大学 | Aging modeling method and aging injector of IGBT |
| CN112213610B (en) * | 2019-12-27 | 2021-07-27 | 电子科技大学 | Non-stop measurement method for threshold voltage of insulated gate device |
| CN112906333B (en) * | 2021-01-22 | 2022-08-12 | 武汉大学 | Photovoltaic inverter IGBT junction temperature online correction method and system considering aging |
| CN113567825B (en) * | 2021-07-26 | 2023-01-13 | 华北电力大学 | IGBT module bonding wire breakage online monitoring device, monitoring method and application |
| CN114740327B (en) * | 2022-06-10 | 2022-10-11 | 江苏东海半导体股份有限公司 | IGBT module state monitoring method and device |
| CN116203370A (en) * | 2023-01-05 | 2023-06-02 | 重庆大学 | Threshold voltage stability test method and test equipment for MOS semiconductor device |
| CN116206667B (en) * | 2023-04-28 | 2023-08-08 | 合肥康芯威存储技术有限公司 | Chip testing method and device |
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