CN105900234B - 电力半导体装置 - Google Patents
电力半导体装置 Download PDFInfo
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Abstract
目的在于提供一种能够尽量维持散热性并实现电力半导体装置的低成本化的技术。电力半导体装置具有:引线框架(1a);电力半导体元件(2),其配置于引线框架(1a)的上表面之上;以及绝缘层(6),其配置于引线框架(1a)的下表面之上。在上述下表面配置了绝缘层(6)的区域的外周线的至少一部分线与扩大外周线的至少一部分线在俯视图中对齐,该扩大外周线是在如下情况下得到的,即,将在上述上表面配置了电力半导体元件(2)的区域的外周线以引线框架(1a)的厚度的量进行了扩展。
Description
技术领域
本发明涉及一种电力半导体装置,特别是涉及包含功率芯片等电力用半导体元件的电力半导体装置。
背景技术
作为电力半导体装置,提出了如下传递塑模型功率模块,即,具有:导体板(金属板),其与绝缘基板层叠接合;电力半导体元件,其与该导体板接合;导线,其与该电力半导体元件电导通;塑模树脂,其覆盖上述各部件;以及绝缘基板(绝缘层),其与塑模树脂相比散热性较高(例如专利文献1)。
专利文献1:日本特开2009-206406号公报
发明内容
在当前的电力半导体装置中,与搭载有电力半导体元件的导体板的面积相比,使绝缘基板的面积增大。这样,根据使与塑模树脂相比散热性较高的绝缘基板的面积增大的结构,能够提高电力半导体装置整体(封装体整体)的散热性。
但是,绝缘基板与塑模树脂相比成本较高。因此,如果使绝缘基板的面积增大,则存在电力半导体装置整体(封装体整体)的成本变高这一问题。
因此,本发明就是鉴于上述问题而提出的,其目的在于提供一种技术,该技术能够尽量维持散热性并实现电力半导体装置的低成本化。
本发明所涉及的电力半导体装置具有:引线框架;电力用半导体元件,其配置于所述引线框架的第1主面之上;以及绝缘部件,其配置于所述引线框架的与所述第1主面相反侧的第2主面之上。绝缘区域外周线的至少一部分线与扩大外周线的至少一部分线在俯视图中对齐,该绝缘区域外周线是在所述第2主面配置了所述绝缘部件的区域的外周线,该扩大外周线是在如下情况下得到的,即,将在所述第1主面配置了所述半导体元件的区域的外周线以所述引线框架的厚度的量进行了扩展。
发明的效果
根据本发明,能够尽量维持散热性并实现电力半导体装置的低成本化。
通过以下的详细说明和附图,使得本发明的目的、特征、方式、以及优点更清楚。
附图说明
图1是表示实施方式1所涉及的电力半导体装置的结构的俯视图。
图2是表示实施方式1所涉及的电力半导体装置的结构的剖视图。
图3是表示实施方式1所涉及的电力半导体装置的结构的剖视图。
图4是表示实施方式1所涉及的电力半导体元件及绝缘层之间的关系的俯视图。
图5是表示实施方式2所涉及的电力半导体装置的结构的俯视图。
图6是表示实施方式2所涉及的电力半导体装置的结构的剖视图。
图7是表示实施方式2所涉及的电力半导体装置的结构的俯视图。
图8是表示实施方式3所涉及的电力半导体装置的结构的剖视图。
图9是表示实施方式4所涉及的电力半导体装置的结构的俯视图。
图10是表示实施方式4所涉及的电力半导体装置的结构的剖视图。
图11是表示实施方式5所涉及的电力半导体装置的结构的俯视图。
图12是表示实施方式5所涉及的电力半导体装置的结构的俯视图。
图13是表示实施方式6所涉及的电力半导体装置的结构的俯视图。
图14是表示实施方式6所涉及的电力半导体装置的结构的俯视图。
具体实施方式
<实施方式1>
图1是表示本发明的实施方式1所涉及的电力半导体装置的结构的俯视图,图2是表示该结构的、沿XZ平面的剖视图。该电力半导体装置具有:由金属(例如铜)构成的引线框架1a、1b、1c、1d;功率芯片等电力用半导体元件(以下记为“电力半导体元件”)2;IC(Integrated Circuit)芯片等控制用半导体元件(以下记为“控制半导体元件”)3;第1导线4;第2导线5;作为绝缘部件的绝缘层6;导电板7;以及对它们进行封装的塑模树脂8。
下面,使用图1及图2等,对应用了传递塑模型封装体的电力半导体装置的结构要素进行详细说明。此外,本发明不限定于此,只要是传递塑模型的封装体,则也可以是应用了其他构造的封装体的电力半导体装置。
引线框架1a~1d中的引线框架1a、1b形成为平板状,上表面(+Z侧的面)及下表面(-Z侧的面)均被平坦化。引线框架1c、1d形成为L字状。引线框架1a~1d例如形成为具有0.5mm的厚度。
电力半导体元件2被配置(接合)于引线框架1a的上表面(第1主面)之上。在这里,2个电力半导体元件2被配置于引线框架1a所具有的芯片焊盘的上表面之上。
控制半导体元件3被配置(接合)于引线框架1b所具有的芯片焊盘的上表面之上。该控制半导体元件3例如与从外部输入至引线框架1d的控制信号相应地对电力半导体元件2的动作进行控制。
第1导线4将电力半导体元件2彼此之间、以及电力半导体元件2和引线框架1c之间电连接。该第1导线4是细金属线,例如使用铝作为第1导线的材质。
第2导线5将电力半导体元件2和控制半导体元件3之间、以及控制半导体元件3和引线框架1d之间电连接。该第2导线5是比第1导线4细的金属线,例如使用金等作为第2导线5的材质。
绝缘层6被配置(接合)于引线框架1a的与上表面相反侧的下表面(第2主面)之上。在图1中,绝缘层6以双点划线(假想线)示出。此外,在以后的图中,也同样地将绝缘层6以双点划线示出。绝缘层6具有较高的热传导性,例如使用含有高传导性填料的环氧树脂等作为绝缘层6的材质。此外,也可以取代绝缘层6而具有其他绝缘部件(例如绝缘片或者绝缘基板)。
导电板7被配置(接合)于绝缘层6的下表面之上而一体化。导电板7形成为与绝缘层6相同的形状,绝缘层6及导电板7的X方向上的宽度彼此相等,Y方向上的宽度彼此相等。导电板7被用作散热板,例如使用铜、铝等金属作为导电板7的材质。
除引线框架1c、1d的一部分以及导电板7的下表面以外,塑模树脂8将引线框架1a~1d、电力半导体元件2、控制半导体元件3、第1导线4、第2导线5、绝缘层6以及导电板7覆盖。不利用塑模树脂8将引线框架1c、1d的一部分覆盖的理由在于,为了将电力半导体元件2等与外部电连接。不利用塑模树脂8将导电板7的下表面覆盖的理由在于,为了与未图示的外部的散热鳍片等热连接。鉴于传递塑模方式,使用带热硬化性的部件作为塑模树脂8的材质,该部件在形成塑模树脂8时(树脂封装时)具有流动性,之后具有硬化性。此外,在这里,以使导电板7的下表面和塑模树脂8的下表面之间无台阶的方式形成塑模树脂8。
另外,在当前的电力半导体装置中,使绝缘层的面积比导电板的面积大。通常,由于绝缘层的散热性比塑模树脂高,因此能够通过增大绝缘层的面积而提高电力半导体装置整体(封装体整体)的散热性。但是,由于绝缘层与塑模树脂相比成本较高,因此存在如下问题,即,如果增大绝缘层的面积,则电力半导体装置整体(封装体整体)的成本变高。
因此,在本实施方式1所涉及的电力半导体装置中,通过以尽量维持散热性的方式适当地减小绝缘层6的面积,使绝缘层6小型化,从而实现电力半导体装置的成本的降低。为了实现上述目的,发明人研究了与散热相关的热传导的机制。
并且,发明人认为像图3所示那样,电力半导体元件2的热量从引线框架1a的上表面经由内部而传递至下表面的路径的宽度是相对于从上表面朝向下表面的方向倾斜大约45度而逐渐扩大的。根据该思路,电力半导体元件2的热量以扩大区域(在图3中是L+2t内的区域)传递至引线框架1a的下表面,该扩大区域是将配置了电力半导体元件2的区域(在图3中为宽度L内的区域)以引线框架1a的厚度t的量向外侧扩展后得到的。
因此,在本实施方式1中构成为,在俯视图(图1及后述的图4)中,在引线框架1a的下表面配置了绝缘层6的区域的外周线的一部分线与扩大外周线的一部分线对齐,该扩大外周线是在如下情况下得到的,即,将在引线框架1a的上表面配置了电力半导体元件2的区域的外周线以引线框架1a的厚度的量进行了扩展。由此,能够尽量维持散热性并实现高成本的绝缘层6的小型化,进而实现电力半导体装置的低成本化。此外,下面,有时还将在引线框架1a的下表面配置了绝缘层6的区域记作“绝缘层区域”,还将绝缘层区域的外周线记作“绝缘区域外周线”。另外,下面,有时还将在引线框架1a的上表面配置了电力半导体元件2的区域记为“半导体元件区域”。
图4是表示本实施方式1所涉及的电力半导体元件2及绝缘层6之间的关系、即半导体元件区域及绝缘层区域之间的关系的俯视图。实际上,在电力半导体元件2和绝缘层6之间存在引线框架1a,但在该图4中,将电力半导体元件2和绝缘层6提取出而进行图示。
下面,以如下结构为例进行说明,即,电力半导体元件2的半导体元件区域的X方向及Y方向的长度分别为10mm,2个电力半导体元件2的半导体元件区域彼此的间隔为3mm,引线框架1a的厚度为0.5mm。
此外,在本实施方式1中,1个绝缘层6被与配置于1个引线框架1a的多个(2个)电力半导体元件2全体相对应地配置于该1个引线框架1a的下表面之上。即,1个绝缘层6的绝缘层区域被配置为横跨2个电力半导体元件2的半导体元件区域。其结果,在2个电力半导体元件2彼此的间隔部分也配置有绝缘层6。
如图4所示,绝缘区域外周线中-Y侧的线与扩大外周线的-Y侧的线对齐,该扩大外周线是在将2个半导体元件区域的外周线以引线框架1a的厚度的量(0.5mm)扩展后的情况下得到的。同样地,绝缘区域外周线中+Y侧的线与扩大外周线的+Y侧的线对齐,该扩大外周线是在将2个半导体元件区域的外周线以引线框架1a的厚度的量(0.5mm)扩展后的情况下得到的。
绝缘区域外周线中-X侧的线与扩大外周线的-X侧的线对齐,该扩大外周线是在将-X侧的半导体元件区域的外周线以引线框架1a的厚度的量(0.5mm)扩展后的情况下得到的。同样地,绝缘区域外周线中+X侧的线与扩大外周线的+X侧的线对齐,该扩大外周线是在将+X侧的半导体元件区域的外周线以引线框架1a的厚度的量(0.5mm)扩展后的情况下得到的。
如上所述,在本实施方式1中,扩大外周线是在如下情况下得到的,即,将在1个引线框架1a的上表面之上配置了多个(2个)电力半导体元件2全体的区域的外周线以引线框架1a的厚度的量进行了扩展。此外,作为配置了2个电力半导体元件2全体的区域的外周线,例如应用将2个电力半导体元件2的半导体元件区域全体包围且由该外周线所包围的面积最小的外周线。
另外,绝缘区域外周线中除上述线以外的线与扩大外周线中除上述线以外的线相比,在俯视图中位于外侧。即,仅仅是绝缘区域外周线的一部分线与扩大外周线的一部分线在俯视图中对齐,绝缘区域外周线的剩余的线与扩大外周线的剩余的线相比在俯视图中位于外侧。
其结果,绝缘层6的绝缘层区域的形状是X方向的长度为24mm、Y方向的长度为11mm的矩形。此外,图4所示的结构是本实施方式1的一个例子,在电力半导体元件2的尺寸(X方向及Y方向的长度)、多个电力半导体元件2彼此的间隔、引线框架1a的厚度变更的情况下,绝缘层6的尺寸(X方向及Y方向的长度)也变更。
根据以上所述的本实施方式1所涉及的电力半导体装置,绝缘区域外周线的一部分线与扩大外周线的一部分线在俯视图中对齐,该扩大外周线是在将半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。由此,能够尽量维持散热性并将高成本的绝缘层6小型化。即,能够尽量维持散热性并实现电力半导体装置的低成本化。
<实施方式2>
图5是表示本发明的实施方式2所涉及的电力半导体装置的结构的俯视图,图6是表示该结构的、沿XZ平面的剖视图。此外,在本实施方式2所涉及的电力半导体装置中,对与以上说明的结构要素相同或者类似的结构要素标注相同的参照标号,下面,以不同点为中心进行说明。
如图5及图6所示,在本实施方式2中设置有与电力半导体元件2的个数(2个)相同个数的绝缘层6。具体地说,多个(2个)绝缘层6被与配置于1个引线框架1a的多个(2个)电力半导体元件2一一对应地配置于1个引线框架1a的下表面之上。
另外,在俯视图(图5)中,-X侧的绝缘区域外周线与扩大外周线大致对齐,该扩大外周线是在从-X侧的半导体元件区域的外周线起以引线框架1a的厚度的量扩展后的情况下得到的。并且,+X侧的绝缘区域外周线与扩大外周线大致对齐,该扩大外周线是在从+X侧的半导体元件区域的外周线起以引线框架1a的厚度的量扩展后的情况下得到的。
根据以上述方式构成的本实施方式2所涉及的电力半导体装置,2个绝缘层6被与2个电力半导体元件2一一对应地配置于1个引线框架1a的下表面之上。由此,得到与实施方式1相同的效果。另外,不仅如此,在实施方式1中,绝缘层6还配置于2个电力半导体元件2彼此的间隔部分,与此相对,根据本实施方式2,可以不将绝缘层6配置于该间隔部分。因此,能够期待更可靠地实现电力半导体装置的低成本化。
此外,本实施方式2不限于以上的说明。例如,如图7所示,也可以将绝缘区域外周线的角部设为曲线形状。即,也可以是在俯视图中,-X侧的绝缘区域外周线与扩大外周线完全对齐,该扩大外周线是在从-X侧的半导体元件区域的外周线起以引线框架1a的厚度的量扩展后的情况下得到的。同样地,+X侧的绝缘区域外周线也可以与扩大外周线完全对齐,该扩大外周线是在从+X侧的半导体元件区域的外周线起以引线框架1a的厚度的量扩展后的情况下得到的。
<实施方式3>
图8是表示本发明的实施方式3所涉及的电力半导体装置的结构的、沿XZ平面的剖视图。此外,表示本实施方式3所涉及的电力半导体装置的结构的俯视图与表示实施方式1、2的结构的俯视图(图1、图5)相同。在本实施方式3所涉及的电力半导体装置中,对与以上说明的结构要素相同或者类似的结构要素标注同一参照标号,下面,以不同点为中心进行说明。
在图8所示的电力半导体装置中,电力半导体元件2及绝缘层6与引线框架1a的端部相比配置于内侧。并且,引线框架1a的端部(芯片焊盘的端部)从绝缘层6侧(-Z侧)朝向电力半导体元件2侧(+Z侧)弯折。
根据以上所述的本实施方式3所涉及的电力半导体装置,能够得到与实施方式1相同的效果。另外,不仅如此,还能够考虑到作为塑模树脂8的树脂的流动性而进行设计。由此,例如在形成电力半导体装置的塑模树脂8时,能够提高与引线框架1a的下表面、绝缘层6及导电板7的侧面相邻的空间中的树脂的流动性。
<实施方式4>
图9是表示本发明的实施方式4所涉及的电力半导体装置的结构的俯视图,图10是表示该结构的、沿XZ平面的剖视图。此外,在本实施方式4所涉及的电力半导体装置中,对与以上说明的结构要素相同或者类似的结构要素标注同一参照标号,下面,以不同点为中心进行说明。
如图9及图10所示,在本实施方式4中,在引线框架1a设置有通孔11,该通孔11贯通未配置电力半导体元件2的位置的上表面、和未配置绝缘层6的位置的下表面。在这里,在引线框架1a设置有6个通孔11,但通孔11的个数不限于此。
根据以上所述的本实施方式4所涉及的电力半导体装置,能够得到与实施方式1相同的效果。另外,不仅如此,还能够考虑到作为塑模树脂8的树脂的流动性而进行设计。由此,例如在形成电力半导体装置的塑模树脂8时,能够提高与引线框架1a的下表面、绝缘层6及导电板7的侧面相邻的空间中的树脂的流动性。
此外,在要求进一步提高作为塑模树脂8的树脂的流动性的情况下,也可以将本实施方式4、和上述的实施方式3的结构组合。
<实施方式5>
图11是表示本发明的实施方式5所涉及的电力半导体装置的结构的俯视图。在本实施方式5所涉及的电力半导体装置中,对与以上说明的结构要素相同或者类似的结构要素标注同一参照标号,下面,以不同点为中心进行说明。
如图11所示,在本实施方式5中,多个(2个)引线框架1a沿Y方向排列,多个(2个)列单位的电力半导体元件2被配置于该多个(2个)引线框架1a。具体地说,作为1个列单位的电力半导体元件2,在X方向上相邻的2个电力半导体元件2被配置于各引线框架1a。此外,对各列单位的电力半导体元件2应用与在实施方式1中说明的结构相同的结构。因此,本实施方式5所涉及的电力半导体装置的沿各列单位的剖视图与表示实施方式1的结构的剖视图(图1)相同。
但是,在本实施方式5中,并非是配置多个绝缘层6,而是配置1个绝缘层6。具体地说,1个绝缘层6被与多个(2个)列单位的电力半导体元件2全体相对应地配置于多个(2个)引线框架1a的下表面之上。即,1个绝缘层6的绝缘层区域被配置为横跨4个电力半导体元件2的半导体元件区域。
另外,在本实施方式5中,在俯视图(图11)中,绝缘区域外周线中-Y侧的线与扩大外周线的-Y侧的线对齐,该扩大外周线是在将-Y侧的2个半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。并且,绝缘区域外周线中+Y侧的线与扩大外周线的+Y侧的线对齐,该扩大外周线是在将+Y侧的2个半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。
另外,在俯视图(图11)中,绝缘区域外周线中-X侧的线与扩大外周线的-X侧的线对齐,该扩大外周线是在将-X侧的2个半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。并且,绝缘区域外周线中+X侧的线与扩大外周线的+X侧的线对齐,该扩大外周线是在将+X侧的2个半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。
如上所述,在本实施方式5中,扩大外周线是在如下情况下得到的,即,将在多个(2个)引线框架1a的上表面之上配置了多个(2个)列单位的电力半导体元件2全体的区域的外周线以引线框架1a的厚度的量进行了扩展。
根据以上述方式构成的本实施方式5所涉及的电力半导体装置,对于电力半导体元件2被排列为多列的结构,也能够得到与实施方式1相同的效果。
此外,电力半导体元件2的列单位的数量不限于2个。例如,也可以如图12所示那样电力半导体元件2的列单位的数量为6个,也可以是3~5、或者大于或等于7的任意的自然数。另外,虽未图示,但也可以将实施方式3及实施方式4中的至少1个应用于本实施方式5。
<实施方式6>
图13是表示本发明的实施方式6所涉及的电力半导体装置的结构的俯视图。在本实施方式6所涉及的电力半导体装置中,对与以上说明的结构要素相同或者类似的结构要素标注同一参照标号,下面,以不同点为中心进行说明。
如图13所示,在本实施方式6中,与实施方式5同样地,多个(2个)引线框架1a沿Y方向排列,多个(2个)列单位的电力半导体元件2被配置于该多个(2个)引线框架1a。
但是,在本实施方式6中,并非是配置1个绝缘层6,而是将多个(2个)绝缘层6与上述多个(2个)列单位的电力半导体元件2一一对应地配置于2个引线框架1a的下表面之上。即,各绝缘层6的绝缘层区域被配置为横跨各列单位的电力半导体元件2的半导体元件区域。
另外,在本实施方式6中,在俯视图(图13)中,各列的绝缘区域外周线中-Y侧的线与扩大外周线的-Y侧的线对齐,该扩大外周线是在将各列的半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。同样地,各列的绝缘区域外周线中+Y侧的线与扩大外周线的+Y侧的线对齐,该扩大外周线是在将各列的半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。
另外,各列的绝缘区域外周线中-X侧的线与扩大外周线的-X侧的线对齐,该扩大外周线是在将各列的-X侧的半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。同样地,各列的绝缘区域外周线中+X侧的线与扩大外周线的+X侧的线对齐,该扩大外周线是在将各列的+X侧的半导体元件区域的外周线以引线框架1a的厚度的量扩展后的情况下得到的。
如上所述,在本实施方式6中,扩大外周线是在如下情况下得到的,即,将在各引线框架1a的上表面之上配置了各列单位的电力半导体元件2的区域的外周线以引线框架1a的厚度的量进行了扩展。
根据以上述方式构成的本实施方式6所涉及的电力半导体装置,能够得到与实施方式5相同的效果。另外,不仅如此,在实施方式5中还将绝缘层6配置于彼此相邻的2列电力半导体元件2彼此的间隔部分,但根据本实施方式6,可以不将绝缘层6配置于该间隔部分。因此,能够期待更可靠地实现电力半导体装置的低成本化。
此外,电力半导体元件2的列单位的数量不限于2个。例如,也可以如图14所示那样电力半导体元件2的列单位的数量为6个,也可以是3~5、或者大于或等于7的任意的自然数。另外,虽未图示,但也可以将实施方式3及实施方式4中的至少1个应用于本实施方式6。
此外,关于本发明,能够在本发明的范围内对各实施方式自由地进行组合,或者对各实施方式适当地进行变形、省略。
详细地说明了本发明,但上述说明的所有方式均为例示,本发明不限定于此。可以理解为能够在不脱离本发明的范围的前提下想到未例示的无数的变形例。
标号的说明
1a引线框架,2电力半导体元件,6绝缘层,11通孔。
Claims (7)
1.一种电力半导体装置,其具有:
引线框架;
电力用半导体元件,其配置于所述引线框架的第1主面之上;以及
绝缘部件,其配置于所述引线框架的与所述第1主面相反侧的第2主面之上,
绝缘区域外周线的至少一部分线与扩大外周线的至少一部分线在俯视图中对齐,该绝缘区域外周线是在所述第2主面配置了所述绝缘部件的区域的外周线,该扩大外周线是在如下情况下得到的,即,将在所述第1主面配置了所述半导体元件的区域的外周线以所述引线框架的厚度的量进行了扩展,
在仅仅是所述绝缘区域外周线的一部分线与所述扩大外周线的一部分线在俯视图中对齐的情况下,所述绝缘区域外周线的剩余的线与所述扩大外周线的剩余的线相比在俯视图中位于外侧。
2.根据权利要求1所述的电力半导体装置,其中,
1个所述绝缘部件被与配置于1个所述引线框架的多个所述半导体元件全体相对应地配置于所述1个引线框架的所述第2主面之上,
所述扩大外周线是在如下情况下得到的,即,将在所述第1主面配置了所述多个半导体元件全体的区域的外周线以所述引线框架的厚度的量进行了扩展。
3.根据权利要求1所述的电力半导体装置,其中,
多个所述绝缘部件被与配置于1个所述引线框架的多个所述半导体元件一一对应地配置于所述1个引线框架的所述第2主面之上。
4.根据权利要求1所述的电力半导体装置,其中,
1个所述绝缘部件被与配置于多个所述引线框架的多个列单位的所述半导体元件全体相对应地配置于所述多个引线框架的所述第2主面之上,
所述扩大外周线是在如下情况下得到的,即,将在所述多个引线框架的所述第1主面配置了所述多个列单位的半导体元件全体的区域的外周线以所述引线框架的厚度的量进行了扩展。
5.根据权利要求1所述的电力半导体装置,其中,
多个所述绝缘部件被与配置于多个所述引线框架的多个列单位的所述半导体元件一一对应地分别配置于所述多个引线框架的所述第2主面之上,
所述扩大外周线是在如下情况下得到的,即,将在各所述引线框架的所述第1主面配置了各列单位的所述半导体元件的区域的外周线以所述引线框架的厚度的量进行了扩展。
6.根据权利要求1所述的电力半导体装置,其中,
所述引线框架的端部从所述绝缘部件侧朝向所述半导体元件侧弯折。
7.根据权利要求1所述的电力半导体装置,其中,
在所述引线框架设置有通孔,该通孔贯通未配置所述半导体元件的位置的所述第1主面、和未配置所述绝缘部件的位置的所述第2主面。
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