CN105895740A - Fabrication method of graphene-gold composite electrode for diamond radiation detector - Google Patents
Fabrication method of graphene-gold composite electrode for diamond radiation detector Download PDFInfo
- Publication number
- CN105895740A CN105895740A CN201610315723.XA CN201610315723A CN105895740A CN 105895740 A CN105895740 A CN 105895740A CN 201610315723 A CN201610315723 A CN 201610315723A CN 105895740 A CN105895740 A CN 105895740A
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- Prior art keywords
- graphene
- gold
- diamond
- electrode
- spin coating
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 35
- 239000010432 diamond Substances 0.000 title claims abstract description 35
- 239000010931 gold Substances 0.000 title claims abstract description 28
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000005855 radiation Effects 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000002131 composite material Substances 0.000 title 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000007796 conventional method Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 17
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 2
- 239000002355 dual-layer Substances 0.000 abstract 3
- 238000005566 electron beam evaporation Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
The invention relates to a fabrication method for an ohmic contact electrode of a diamond radiation detector, and belongs to the technical field of a fabrication process for the diamond radiation detector. The fabrication method comprises the following steps of fabricating a graphene layer on the surface of a diamond thin film by a spin-coating method, fabricating a gold electrode on the surface of the graphene layer by a vacuum evaporation method or an electron beam evaporation method, fabricating a graphene-gold dual-layer system, and carrying out annealing in a nitrogen atmosphere to form the ohmic contact electrode. The dual-layer graphene-gold dual-layer ohmic electrode has relatively good ohmic contact characteristic and relatively low contact resistivity, the device performance is obviously improved, and moreover, the fabrication process is relatively simple.
Description
Technical field
The Ohm contact electrode that the present invention relates to a kind of diamond radiation detector optimizes preparation method, belongs to Buddha's warrior attendant
Stone thin film radiation detector manufacturing process technology field.
Background technology
Diamond is a kind of semiconductor material with wide forbidden band.In general, making Ohmic contact on wide bandgap semiconductor is
Relatively difficult.It is typically on diamond thin, deposit a kind of energy and the metal of diamond reaction generation carbide, and passes through
High-temperature process, makes metal and diamond occur carburizing reagent to generate carbide in interface.
The electrode structure of diamond Ohmic contact mainly uses individual layer system and the titanium-platinum-gold Three-tider architecture of gold at present.Gold
There is excellent electric conductivity and resistance to corrosion, be preferable ohmic contact material.Platinum plays the effect on barrier layer, can stop gold
Spread in titanium and diamond, can stop that again titanium spreads in gold, it is to avoid titanium is diffused into layer gold and causes the resistance of gold to raise.Titanium is made
For the intermediate layer between diamond and gold, reacting generation titanium carbide with diamond, the formation of titanium carbide enhances adhesive force.But
Being that experiment shows, the heat endurance of gold is poor；The introducing of titanium reduces the resistivity of Ohmic contact, simultaneously at diamond and titanium
Interface forms titanyl compound can cause the unstability of polarization phenomena and signal transacting, and the heat endurance of titanium is the most not
Good, it is hardly formed good Ohmic contact.
Summary of the invention
It is an object of the invention on diamond thin, design and produce the Ohmic electrode of Graphene-golden two coating systems.
The present invention is mainly characterized by with Graphene replacement titanium as tunnel layer, serves the work reducing contact resistivity
With, it is to avoid the polarization phenomena of titanium oxide, solve the problem that in titanium-platinum-gold three-layer metal system, heat endurance is the best.
Experiment shows, the introducing of Graphene greatly reduces the contact resistivity of electrode system, improves Ohmic contact special
Property.And decrease electrode and use the kind of metal material, simplify technological process.
For reaching above-mentioned purpose, the preparation of Graphene of the present invention-golden two coating systems Ohmic electrodes adopts the following technical scheme that
And step.
The preparation method of the present invention a kind of diamond radiation detector Graphene-gold combination electrode, it is characterised in that tool
There are following preparation process and a step:
A, the preparation of diamond thin on substrate silicon chip
Diamond thin is polycrystalline diamond films, uses traditional chemical gaseous phase depositing process to grow, and the substrate of employing is single
Crystal silicon；When growth thickness is more than 100 μm, silicon substrate is eroded and makes self-supporting diamond thin film；
B, spin coating graphene oxide
The graphene oxide using tradition conventional method will to be prepared from by graphite, is spun on diamond thin, spin coating method
Spin coating revolution be 1000-6000r/min, spin coating amount is that 5-30 drips；
C, redox graphene
Reducing process uses tubular annealing stove, and in boiler tube, atmosphere is nitrogen to keep intraductal atmospheric pressure be 0.5-1Bar, temperature 200-
400 DEG C, 2 DEG C/min of heating rate, temperature retention time 1-4h, last cooling naturally, obtain Graphene；
D, deposits gold thin film layer on Graphene
Gold thin film layer uses vacuum vapour deposition or electron-beam vapor deposition method to prepare, and in evaporation process, operating air pressure is 7 × 10-8-
2.67×10-10 Bar, sedimentation rate is 0.5-2A/S, and its thickness is 50-200nm；
E, annealing
Using tubular annealing stove or vacuum annealing furnace, atmosphere is vacuum or nitrogen, and annealing temperature is 300-800 DEG C, heating rate
For 10-30 DEG C/S, the time is 10-60min, the compound two layers of Ohmic electrode of the final Graphene-gold prepared on diamond thin.
The present invention compared with the existing technology, has a following remarkable advantage:
(1) present invention uses Graphene as the transition zone of metal Yu diamond, plays the effect reducing contact resistivity.
(2) owing to replacing Titanium with Graphene, it is to avoid polarization phenomena that titanyl compound causes and signal transacting
Unstability so that the heat endurance of Ohmic electrode is greatly improved and reduces preparation cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of Graphene of the present invention-golden two coating systems Ohmic electrodes.
Fig. 2 be Graphene of the present invention-golden two coating systems Ohmic electrodes annealing before and after current-voltage test curve figure.
Detailed description of the invention
After now the specific embodiment of the present invention being described in.
Embodiment
Concrete preparation process and step in the present embodiment are as described below.
A, the preparation of graphene layer
Use spin-coating method, graphene oxide is spun on polycrystalline diamond films.Spin coating proceeding parameter is revolution 6000r/
Min, uses liquid-transfering gun spin coating 7.
Graphene oxide needs to do reduction treatment, and step is as follows: put by the thin diamond membrane sample coating graphene oxide
Entering tubular annealing stove, be passed through nitrogen and to keep intraductal atmospheric pressure be standard atmospheric pressure in boiler tube, nitrogen flow is 160sccm.If
Determine heating schedule, temperature 400 DEG C, 2 DEG C/min of heating rate, temperature retention time 1h, last cooling naturally, take out sample, i.e. obtain
Scribble the diamond thin of Graphene.
B, the preparation of metallic gold film
Use gold target, on described Graphene top layer, prepare metallic gold film by electron-beam vapor deposition method.In evaporation process, work
Air pressure is 2.27 × 10-10 Bar, sedimentation rate is 1.2A/S, and the deposit thickness of layer gold is 150nm.
D, annealing
Employing is rapidly heated stove, is annealed under nitrogen atmosphere by the electrode made, and annealing temperature is 700 DEG C, and heating rate is 30
DEG C/S, the time is 15min, final two layers of Ohmic electrode of Graphene-gold prepared on diamond thin.
Performance test to the present embodiment gained Graphene-two layers of Ohmic electrode of gold
All sample is done before and after annealing current-voltage test, the result display two layers of electrode of Graphene-gold Europe before and after annealing
Nurse contact performance is all good, and anneals and reduce further contact resistance.
Claims (1)
1. the preparation method of diamond radiation detector Graphene-gold combination electrode, it is characterised in that have following
Preparation process and step:
A, the preparation of diamond thin on substrate silicon chip
Diamond thin is polycrystalline diamond films, uses traditional chemical gaseous phase depositing process to grow, and the substrate of employing is single
Crystal silicon；
When growth thickness is more than 100 μm, silicon substrate is eroded, makes self-supporting diamond thin film；
B, spin coating graphene oxide
The graphene oxide using tradition conventional method to be prepared from by graphite, is spun on diamond thin, spin coating method
Spin coating revolution is 1000-6000r/min, and spin coating amount is that 5-30 drips；
C, redox graphene
Reducing process uses tubular annealing stove, and in boiler tube, atmosphere is nitrogen to keep intraductal atmospheric pressure be 0.5-1Bar, temperature 200-
400 DEG C, 2 DEG C/min of heating rate, temperature retention time 1-4h, last cooling naturally, obtain Graphene；
D, deposits gold thin film layer on Graphene
Gold thin film layer uses vacuum vapour deposition or electron-beam vapor deposition method to prepare, and in evaporation process, operating air pressure is 7 × 10-8-2.27
×10-10 Bar, sedimentation rate is 0.5-2A/S, and its thickness is 50-200nm；
E, annealing
Using tubular annealing stove or vacuum annealing furnace, atmosphere is vacuum or nitrogen, and annealing temperature is 300-800 DEG C, heating rate
For 10-30 DEG C/S, the time is 10-60min, the compound two layers of Ohmic electrode of the final Graphene-gold prepared on diamond thin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610315723.XA CN105895740A (en) | 2016-05-14 | 2016-05-14 | Fabrication method of graphene-gold composite electrode for diamond radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610315723.XA CN105895740A (en) | 2016-05-14 | 2016-05-14 | Fabrication method of graphene-gold composite electrode for diamond radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105895740A true CN105895740A (en) | 2016-08-24 |
Family
ID=56717058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610315723.XA Pending CN105895740A (en) | 2016-05-14 | 2016-05-14 | Fabrication method of graphene-gold composite electrode for diamond radiation detector |
Country Status (1)
| Country | Link |
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| CN (1) | CN105895740A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057968A (en) * | 2016-06-12 | 2016-10-26 | 上海大学 | Preparation method for graphene-gold combined electrode used for diamond radiation detector |
| CN106711241A (en) * | 2016-12-21 | 2017-05-24 | 西安交通大学 | Graphene transparent electrode diamond-based ultraviolet detector and preparation method thereof |
| CN109119499A (en) * | 2017-06-26 | 2019-01-01 | 中国科学院宁波材料技术与工程研究所 | A kind of diamond radiation detector and preparation method thereof |
| CN109273354A (en) * | 2018-09-07 | 2019-01-25 | 中国电子科技集团公司第十三研究所 | Diamond device and preparation method thereof |
| CN110342838A (en) * | 2019-07-11 | 2019-10-18 | 济南大学 | A kind of preparation method and application of high thermal conductivity clinker and its cement products |
| CN110428923A (en) * | 2019-08-09 | 2019-11-08 | 哈尔滨工业大学 | Improve the diamond Schottky isotope battery and preparation method thereof of performance using zinc oxide film |
| CN114197042A (en) * | 2021-11-19 | 2022-03-18 | 西安电子科技大学芜湖研究院 | Preparation method of polycrystalline diamond film and radiation detector |
| CN115386862A (en) * | 2022-07-22 | 2022-11-25 | 西南科技大学 | Preparation method of metal/graphene/polycrystalline diamond film particle detector |
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| CN103746036A (en) * | 2014-01-02 | 2014-04-23 | 上海大学 | Preparation method for ohmic contact electrode of diamond radiation detector |
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| US20140318596A1 (en) * | 2011-11-14 | 2014-10-30 | Pacific Integrated Energy, Inc. | Devices, systems and methods for electromagnetic energy collection |
| CN103746036A (en) * | 2014-01-02 | 2014-04-23 | 上海大学 | Preparation method for ohmic contact electrode of diamond radiation detector |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057968A (en) * | 2016-06-12 | 2016-10-26 | 上海大学 | Preparation method for graphene-gold combined electrode used for diamond radiation detector |
| CN106711241A (en) * | 2016-12-21 | 2017-05-24 | 西安交通大学 | Graphene transparent electrode diamond-based ultraviolet detector and preparation method thereof |
| CN109119499A (en) * | 2017-06-26 | 2019-01-01 | 中国科学院宁波材料技术与工程研究所 | A kind of diamond radiation detector and preparation method thereof |
| CN109119499B (en) * | 2017-06-26 | 2020-09-04 | 中国科学院宁波材料技术与工程研究所 | Diamond radiation detector and preparation method thereof |
| CN109273354A (en) * | 2018-09-07 | 2019-01-25 | 中国电子科技集团公司第十三研究所 | Diamond device and preparation method thereof |
| CN109273354B (en) * | 2018-09-07 | 2021-01-12 | 中国电子科技集团公司第十三研究所 | Diamond device and method for manufacturing same |
| CN110342838A (en) * | 2019-07-11 | 2019-10-18 | 济南大学 | A kind of preparation method and application of high thermal conductivity clinker and its cement products |
| CN110342838B (en) * | 2019-07-11 | 2021-08-31 | 济南大学 | High-heat-conductivity cement clinker and preparation method and application of cement product thereof |
| CN110428923A (en) * | 2019-08-09 | 2019-11-08 | 哈尔滨工业大学 | Improve the diamond Schottky isotope battery and preparation method thereof of performance using zinc oxide film |
| CN110428923B (en) * | 2019-08-09 | 2021-06-29 | 哈尔滨工业大学 | Diamond Schottky isotope battery adopting zinc oxide layer to improve performance and preparation method thereof |
| CN114197042A (en) * | 2021-11-19 | 2022-03-18 | 西安电子科技大学芜湖研究院 | Preparation method of polycrystalline diamond film and radiation detector |
| CN115386862A (en) * | 2022-07-22 | 2022-11-25 | 西南科技大学 | Preparation method of metal/graphene/polycrystalline diamond film particle detector |
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