CN105885848A - Preparation of Cd[x]Zn[1-x]S@ZnSe quantum dots and application of Cd[x]Zn[1-x]S@ZnSe quantum dots in solar cells - Google Patents
Preparation of Cd[x]Zn[1-x]S@ZnSe quantum dots and application of Cd[x]Zn[1-x]S@ZnSe quantum dots in solar cells Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002096 quantum dot Substances 0.000 claims abstract description 58
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims description 35
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 25
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 12
- 235000019441 ethanol Nutrition 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 5
- 239000005642 Oleic acid Substances 0.000 claims description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 5
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 5
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004246 zinc acetate Substances 0.000 claims description 5
- 208000035126 Facies Diseases 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- 238000007872 degassing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- -1 rare earth selenide Chemical class 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 238000005119 centrifugation Methods 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000002244 precipitate Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 238000003786 synthesis reaction Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000000862 absorption spectrum Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000006862 quantum yield reaction Methods 0.000 abstract description 2
- 239000004408 titanium dioxide Substances 0.000 abstract description 2
- 239000012074 organic phase Substances 0.000 abstract 2
- 238000004729 solvothermal method Methods 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 230000035484 reaction time Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229960004756 ethanol Drugs 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/54—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing zinc or cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to preparation of Cd[x]Zn[1-x]S@ZnSe quantum dots and application of the Cd[x]Zn[1-x]S@ZnSe quantum dots in solar cells. The characteristics of the solvothermal process are combined with the characteristics of organic phase synthesis in the solvothermal process to successfully synthesize the Cd[x]Zn[1-x]S@ZnSe quantum dots. The reactant proportioning, reaction temperature and reaction time are changed to regulate the particle size of the quantum dots, so that the conduction band and valence band of the semiconductor quantum dots can be matched with the conduction band and valence band of the titanium dioxide more easily to form a staircase structure, thereby accelerating the electron hole transmission, reducing the electron-hole pair compounding and enhancing the photoelectric conversion efficiency of the solar cells. The Cd[x]Zn[1-x]S@ZnSe quantum dots have the advantages of stable preparation technique, high organic phase synthesis quantum yield, long fluorescent lifetime and high chemical stability. The solar cell prepared from the Cd[x]Zn[1-x]S@ZnSe quantum dots is easy for assembly, has the advantages of low cost, wide absorption spectrum and high photoelectric conversion efficiency, and has higher development value.
Description
Technical field
The present invention relates to CdxZn1-xThe preparation method of S@ZnSe quantum dot solar cell, particularly relates to CdxZn1-xS@
The preparation of ZnSe quantum dot solar cell and application thereof.
Background technology
The exploitation of solar energy are all extremely important with development low-carbon economy to solving energy crisis.Its
In, a new generation the quantum dot sensitized solaode of solaode owing to possessing high theoretical conversion efficiencies and low production cost,
Cause the extensive concern of scientific circles.Consider that the defect of material own, level-density parameter and preparation technology are to solar cell properties
Impact, devises CdxZn1-xS@ZnSe quantum dot, as photoelectric conversion material, utilizes alloy wide absorption spectrum, uses solvent thermal
Synthetic technology, has synthesized controllable grain size CdxZn1-xS@ZnSe quanta point material is also applied in solaode.Quantum dot
Make level-density parameter between electron donor and receptor compared to semiconductor material body easy-regulating energy level, solar photoelectric is greatly improved
Conversion efficiency.CdxZn1-xThe S@ZnSe quantum dot fluorescence life-span is the longest, be therefore advantageous to light induced electron sharp separation and
Transmission, thus improve the photovoltaic performance of solar cell.
The present invention is respectively adopted the method for organic synthesis in solvent-thermal method and prepares the Cd of different emissionxZn1-xS@
ZnSe quantum dot, and be applied in solaode.In organic facies, the quantum dot of preparation has higher fluorescent quantum product
Rate, preferable monodispersity and stability, excellent in optical properties and size tunable.
Summary of the invention
It is an object of the invention to provide CdxZn1-xThe preparation of S@ZnSe quantum dot solar cell and application thereof,
CdxZn1-xS@ZnSe quantum dot solar cell has high-photoelectric transformation efficiency, low cost and the feature such as is easily assembled.
1, a kind of CdxZn1-xThe preparation method of S@ZnSe quantum dot, synthesizes in organic facies, and its characterization step is as follows:
(1) using Aska-Rid., zinc acetate as cadmium presoma and zinc precursor, it is dissolved in tributyl phosphorus (TBP) with selenium powder and prepares
Tributyl selenizing phosphorus as selenium presoma, be dissolved in the solution of 1-octadecylene as sulfur source using sulfur powder, with 1-octadecylene as solvent,
Oleic acid prepares oil-soluble Cd as reaction partxZn1-xS@ZnSe quantum dot.Ethanol promotes quantum dot to precipitate, and centrifugation carries
Pure, chloroform dissolves dispersion；
(2) cadmium source: zinc source: sulfur source: selenium source prepares quantum dot with the molar ratio reaction of 1:10:2:4, now quantum dot contains the most anti-
The organic impurities answered, adds excess ethyl alcohol and promotes quantum dot precipitation and centrifugal separation to obtain pressed powder, add chloroform and dissolve
Add excess ethyl alcohol precipitation, repeatedly obtain pure Cd five timesxZn1-xS@ZnSe quantum dot powder；
(3) pure rare earth selenide quantum dots powder is re-dispersed in chloroform；
(4) with porous n-type semiconductor TiO2Nano material is light anode, the quantum dot after purifying and TiO2It is assembled into battery；
When sunlight light anode, it is attached to TiO2On the electronics of quantum dot, hole to separating, electronics is from valence band transition
To conduction band and inject TiO2Conduction band in via FTO electro-conductive glass connect load pass to platinum back electrode, finally by hole
Transport layer PESOT:PSS and electronics are compounded to form electron-hole pair and complete a circulation.
A kind of CdxZn1-xS@ZnSe quantum dot solar cell prepare assemble method, it is characterised in that can be by as follows
Step realizes:
(1) Aska-Rid. and zinc acetate that mol ratio is 1:10 are incorporated in the three-neck flask of the oleic acid containing certain volume, degassing
After evacuation 40 minutes, under Ar protects, reaction is heated to 150 DEG C, injects 1-octadecylene, continue heating and temperature is risen to 300
DEG C, it is rapidly injected the 1-octadecylene solution containing S powder, after reacting 10 minutes, is slowly dropped into containing Se's after temperature rises to 310 DEG C
TBP solution, is quickly down to room temperature after reacting 30 minutes；
(2) Cd prepared byxZn1-xS@ZnSe quantum dot by excess ethanol lure that quantum dot precipitate into, 12000rpm high speed from
The heart separates, and the quantum dot after separation is dispersed back in chloroform obtaining；
(3) with porous TiO2For n-type semiconductor, by TiO2It is spun on FTO electro-conductive glass conductive layer form thin film, by it
It is immersed in prepared CdxZn1-xIn S@ZnSe quantum dot, toward one layer of hole transport layer of spin coating again on sample layer after having soaked
PEDOT:PSS；Select platinum electrode as to electrode, irradiate light anode with simulated solar light source and measured by electrochemical workstation
Solar cell photoelectric conversion efficiency.
The invention have the advantage that in organic facies, the quantum dot fluorescence quantum yield of preparation is high, monodispersity and stability are relatively
Good, excellent in optical properties and size tunable.
Detailed description of the invention
It is described in further detail by the following examples, but the present embodiment is not limited to the present invention, every employing
The analog structure of the present invention and similar change thereof, all should list protection scope of the present invention in.
The present invention uses solvent-thermal method to synthesize Cd in organic faciesxZn1-xS@ZnSe quantum dot, is assembled into titanium dioxide
Battery.
Cd of the present inventionxZn1-xThe synthesis of S@ZnSe quantum dot specifically comprises the following steps that
(1) Aska-Rid. and zinc acetate that mol ratio is 1:10 are incorporated in the three-neck flask containing certain volume oleic acid, same to fashionable dress
Put and need to carry spherical condensation tube, degassing evacuation 40 minutes, pour the S powder of 2mmol into list containing 2ml 1-octadecylene simultaneously
In mouth flask, it is heated to 100 DEG C and makes S powder be completely dissolved；
(2) under nitrogen protection reaction is heated to 150 DEG C, injects 1-octadecylene, then device is evacuated again, then
Open three-way valve and be filled with high-purity Ar in device, make device interior repeatedly for three times and complete anaerobic in solvent；
(3) continue heating and temperature is risen to 300 DEG C, be rapidly injected the 1-octadecylene solution containing S powder, after reacting 10 minutes, treat temperature
Degree is slowly dropped into the TBP solution containing Se after rising to 310 DEG C, is quickly down to room temperature after reacting 30 minutes.
Cd of the present inventionxZn1-xS@ZnSe quantum dot separating-purifying step is as follows:
(1) prepared quantum dot is moved in beaker, be slowly continuously added into ethanol, have precipitation to continuously add second when generating when seeing
Alcohol is until precipitating not regeneration；Being moved in 50mL centrifuge tube by the solution obtained containing precipitation, 12000rmp is centrifuged 10min and obtains
CdxZn1-xS@ZnSe quantum dot powder.Repeatedly five times pure CdxZn1-xS@ZnSe quantum dot.
(2) quantum dot obtained is dispersed in chloroform again for assembled battery.
Cd of the present inventionxZn1-xS@ZnSe quantum dot solar cell number of assembling steps is as follows:
(1) 1.5*2.0cm is taken2FTO electro-conductive glass ultrasonic in acetone, dehydrated alcohol and solution that water mol ratio is 2:2:1
Clean 10min, wash organic solvent with deionized water immediately, clean electro-conductive glass is dried.
(2) in one layer of porous TiO of electro-conductive glass conductive layer spin coating2Film, then will be containing TiO2The electro-conductive glass of film is filling
CdxZn1-xSoaking 24h in the weighing botle of S@ZnSe solution makes quantum dot fully adsorb at TiO2On molecule.
(3) toward adsorbed quantum dot TiO2One layer of PEDOT:PSS of spin coating on film, is clipped in PEDOT with platinum electrode:
PSS upper layer group dresses up rare earth selenide quantum dots solaode.
Four, Cd is passed throughxZn1-xThe synthesis of S@ZnSe quantum dot, CdxZn1-xS@ZnSe quantum dot separating-purifying and CdxZn1-xS@
ZnSe solaode assembles the Cd that three steps prepare low cost, peak width at half height is bigxZn1-xS@ZnSe quantum dot, meets height
The requirement of efficiency solar cells preparation technology.
Claims (2)
1. a CdxZn1-xThe preparation method of S@ZnSe quantum dot, synthesizes in organic facies, and its characterization step is as follows:
(1) using Aska-Rid., zinc acetate as cadmium presoma and zinc precursor, it is dissolved in three fourths prepared by tributyl phosphorus with selenium powder
Base selenizing phosphorus as selenium presoma, is dissolved in the solution of 1-octadecylene as sulfur source using sulfur powder, and with 1-octadecylene as solvent, oleic acid is made
Oil-soluble Cd is prepared for reaction partxZn1-xS@ZnSe quantum dot；Ethanol promotes quantum dot to precipitate, and centrifugation purifies, trichlorine
Methane dissolves dispersion；
(2) cadmium source: zinc source: sulfur source: selenium source prepares quantum dot with the molar ratio reaction of 1:10:2:4, now quantum dot contains the most anti-
The organic impurities answered, adds excess ethyl alcohol and promotes quantum dot precipitation and centrifugal separation to obtain pressed powder, add chloroform and dissolve
Add excess ethyl alcohol precipitation, repeatedly obtain pure Cd five timesxZn1-xS@ZnSe quantum dot powder；
(3) pure rare earth selenide quantum dots powder is re-dispersed in chloroform；
(4) with porous n-type semiconductor TiO2Nano material is light anode, the quantum dot after purifying and TiO2It is assembled into battery；When
During sunlight light anode, it is attached to TiO2On the electronics of quantum dot, hole to separating, electronics transits to from valence band
Conduction band also injects TiO2Conduction band in via FTO electro-conductive glass connect load pass to platinum back electrode, finally by hole pass
Defeated layer PESOT:PSS and electronics are compounded to form electron-hole pair and complete a circulation.
2. the Cd used described in claim 1xZn1-xS@ZnSe quantum dot solar cell prepare assemble method, it is special
Levy and be to be achieved by the steps of:
(1) Aska-Rid. and zinc acetate that mol ratio is 1:10 are incorporated in the three-neck flask of the oleic acid containing certain volume, degassing
After evacuation 40 minutes, under Ar protects, reaction is heated to 150 DEG C, injects 1-octadecylene, continue heating and temperature is risen to 300
DEG C, it is rapidly injected the 1-octadecylene solution containing S powder, after reacting 10 minutes, is slowly dropped into containing Se's after temperature rises to 310 DEG C
TBP solution, is quickly down to room temperature after reacting 30 minutes；
(2) Cd prepared byxZn1-xS@ZnSe quantum dot by excess ethanol lure that quantum dot precipitate into, 12000rpm high speed from
The heart separates, and the quantum dot after separation is dispersed back in chloroform obtaining；
(3) with porous TiO2For n-type semiconductor, by TiO2It is spun on FTO electro-conductive glass conductive layer form thin film, by it
It is immersed in prepared CdxZn1-xIn S@ZnSe quantum dot, toward one layer of hole transport layer of spin coating again on sample layer after having soaked
PEDOT:PSS；Select platinum electrode as to electrode, irradiate light anode with simulated solar light source and measured by electrochemical workstation
Solar cell photoelectric conversion efficiency.
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| CN201610320720.5A CN105885848A (en) | 2016-05-16 | 2016-05-16 | Preparation of Cd[x]Zn[1-x]S@ZnSe quantum dots and application of Cd[x]Zn[1-x]S@ZnSe quantum dots in solar cells |
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| CN201610320720.5A CN105885848A (en) | 2016-05-16 | 2016-05-16 | Preparation of Cd[x]Zn[1-x]S@ZnSe quantum dots and application of Cd[x]Zn[1-x]S@ZnSe quantum dots in solar cells |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549085A (en) * | 2016-10-17 | 2017-03-29 | 南昌航空大学 | A kind of preparation method of the light emitting diode based on Zinc oxide quantum dot |
| CN107083238A (en) * | 2017-06-12 | 2017-08-22 | 广州琉芯光电科技有限公司 | A kind of polynary quantum dot and preparation method thereof and flexible display device |
| CN107384406A (en) * | 2017-08-24 | 2017-11-24 | 南昌航空大学 | A kind of preparation method of anti-I type CdZnS/CdSe core/shell structure quantum dots |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549085A (en) * | 2016-10-17 | 2017-03-29 | 南昌航空大学 | A kind of preparation method of the light emitting diode based on Zinc oxide quantum dot |
| CN107083238A (en) * | 2017-06-12 | 2017-08-22 | 广州琉芯光电科技有限公司 | A kind of polynary quantum dot and preparation method thereof and flexible display device |
| CN107384406A (en) * | 2017-08-24 | 2017-11-24 | 南昌航空大学 | A kind of preparation method of anti-I type CdZnS/CdSe core/shell structure quantum dots |
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