CN105884364A - Production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes - Google Patents
Production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes Download PDFInfo
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- CN105884364A CN105884364A CN201410747252.0A CN201410747252A CN105884364A CN 105884364 A CN105884364 A CN 105884364A CN 201410747252 A CN201410747252 A CN 201410747252A CN 105884364 A CN105884364 A CN 105884364A
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- Prior art keywords
- silicon carbide
- carbide ceramics
- silicon
- photovoltaic
- waste material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/20—Waste processing or separation
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Abstract
The invention discloses a production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes. The production process comprises the following four steps: raw material preparation, wet ball milling, biscuit preparation and high temperature sintering. The production process has the advantages and beneficial effects that the recycling added value of photovoltaic silicon linear cutting fluid can be greatly increased by using the photovoltaic silicon cutting wastes as the main raw materials and adding carbon black, colloidal graphite and silicon carbide powder to carry out preparation reaction to sinter the silicon carbide ceramics; and the silicon carbide ceramics are compact and have low water absorption and apparent porosity.
Description
Technical field
The present invention relates to silicon carbide ceramics field, be specifically related to a kind of photovoltaic silicon line cutting waste material and burn
The production technology of knot silicon carbide ceramics.
Background technology
Polysilicon and single crystal silicon material are to manufacture the silicon polished and primary raw material of solaode,
Current domestic and international each manufacturing enterprise is in wafer production processes, and widely used line cutting technology is processed
Silicon chip.To performances such as the cleanliness factor on solar silicon wafers surface, flatness, electric conductivity in application
Index has strict requirements, therefore in the cutting process of solar silicon wafers, need use granularity little,
The silicon carbide micro-powder of hardness height and centralized particle diameter is as main Cutting Medium.For making carborundum
Micropowder is uniformly dispersed in working angles, takes away the huge of generation in working angles simultaneously in time and rubs
Chafing, needs by silicon carbide micro-powder according to a certain percentage, to join with Polyethylene Glycol as dispersant
Aqueous solution in, be prepared as carborundum finely dispersed water solublity solar silicon wafers cutting liquid.
During cutting on line, due to the collision between silicon-carbide particle and silicon rod and friction, produce
Raw broken silicon-carbide particle and silicon grain also will be mixed in cutting system.Meanwhile, cutting process
The cutting heat produced, also results in the qualitative change of cutting liquid itself, and therefore, cutting liquid is several in use
Must change after secondary, so, silicon chip cutting is faced with the recycling of substantial amounts of discarded cutting liquid
Problem.
At present, more ripe to the recovery process of Polyethylene Glycol in cutting liquid, but poly-to having reclaimed
Recovery and the utilization of the residual solid garbage after ethylene glycol also do not have particularly effective means, whole
The amount of individual solid waste accounts for the 55% of waste mortar total amount, the solid waste after a large amount of filter pressings
After simple process, sell concrete-agitating as a kind of additive with the price of 400～500 yuan/ton
Stand, mix as additive.Therefore, added value is recycled relatively low, therefore to solid
Garbage is badly in need of developing further new purposes.
Summary of the invention
It is an object of the invention to overcome defect present in prior art, it is provided that a kind of carborundum
The production technology of pottery measured photovoltaic silicon line cutting waste material sintered silicon carbide ceramics.
For realizing above-mentioned technique effect, the technical scheme is that a kind of photovoltaic silicon line cutting
The production technology of waste material sintered silicon carbide ceramics, it is characterised in that comprise the following steps:
S1: by photovoltaic silicon line cutting waste material, carborundum, silicon, charcoal source and polyvinyl alcohol by joining
Than mixing；
S2: by S1 gained mixture wet ball grinding, 110 mesh sieves crossed by slurry；
S3: S2 gained slurry is dried, dried pelletize and dry-pressing formed, obtain biscuit；
S4: the biscuit made is put into graphite crucible, fills biscuit silica flour, then
Burning till at vacuum high temperature furnace, firing temperature is 1600 DEG C, temperature retention time 30min,
In described S1 mixture solid weight, silicone content is 30～32%.
Wherein, silica flour quality is biscuit quality 3～5 times filled in described S4.
Wherein, in described S1, the granularity of carborundum is 30～35 μm.
Wherein, described charcoal source is at least one in white carbon black and aquadag.
Advantages of the present invention and having the beneficial effects that:
With photovoltaic silicon cutting waste material as primary raw material, additional white carbon black and aquadag and carborundum powder
Preparing reaction sintering silicon carbide ceramic, the recycling being greatly improved photovoltaic silicon wire cutting liquid is attached
Value added, described silicon carbide ceramics is fine and close, and water absorption rate and apparent porosity are low.
Detailed description of the invention
Below in conjunction with embodiment, the detailed description of the invention of the present invention is further described.Below
Embodiment is only used for clearly illustrating technical scheme, and can not limit with this
Protection scope of the present invention.
Embodiment 1
The production technology of the photovoltaic silicon line cutting waste material sintered silicon carbide ceramics of embodiment 1, including
Following steps:
S1: by photovoltaic silicon line cutting waste material, carborundum, silicon, charcoal source and polyvinyl alcohol by joining
Than mixing；
S2: by S1 gained mixture wet ball grinding, 110 mesh sieves crossed by slurry；
S3: S2 gained slurry is dried, dried pelletize and dry-pressing formed, obtain biscuit；
S4: the biscuit made is put into graphite crucible, fills biscuit silica flour, then
Burning till at vacuum high temperature furnace, firing temperature is 1600 DEG C, temperature retention time 30min,
In described S1 mixture solid weight, silicone content is 30%.
Wherein, silica flour quality is biscuit quality 3 times filled in S4.
Wherein, in S1, the granularity of carborundum is 30 μm.
Wherein, charcoal source is white carbon black.
Embodiment 2
The production technology of the photovoltaic silicon line cutting waste material sintered silicon carbide ceramics of embodiment 2, including
Following steps:
S1: by photovoltaic silicon line cutting waste material, carborundum, silicon, charcoal source and polyvinyl alcohol by joining
Than mixing；
S2: by S1 gained mixture wet ball grinding, 110 mesh sieves crossed by slurry；
S3: S2 gained slurry is dried, dried pelletize and dry-pressing formed, obtain biscuit；
S4: the biscuit made is put into graphite crucible, fills biscuit silica flour, then
Burning till at vacuum high temperature furnace, firing temperature is 1600 DEG C, temperature retention time 30min,
In described S1 mixture solid weight, silicone content is 31%.
Wherein, silica flour quality is biscuit quality 4 times filled in S4.
Wherein, in S1, the granularity of carborundum is 33 μm.
Wherein, charcoal source is aquadag.
Embodiment 3
The production technology of the photovoltaic silicon line cutting waste material sintered silicon carbide ceramics of embodiment 3, including
Following steps:
S1: by photovoltaic silicon line cutting waste material, carborundum, silicon, charcoal source and polyvinyl alcohol by joining
Than mixing；
S2: by S1 gained mixture wet ball grinding, 110 mesh sieves crossed by slurry；
S3: S2 gained slurry is dried, dried pelletize and dry-pressing formed, obtain biscuit；
S4: the biscuit made is put into graphite crucible, fills biscuit silica flour, then
Burning till at vacuum high temperature furnace, firing temperature is 1600 DEG C, temperature retention time 30min,
In described S1 mixture solid weight, silicone content is 32%.
Wherein, silica flour quality is biscuit quality 5 times filled in S4.
Wherein, in S1, the granularity of carborundum is 35 μm.
Wherein, charcoal source is the mixture of white carbon black and aquadag, and mass ratio is 1: 1.
The above is only the preferred embodiment of the present invention, it is noted that for this technology
For the those of ordinary skill in field, on the premise of without departing from the technology of the present invention principle, also
Can make some improvements and modifications, these improvements and modifications also should be regarded as the protection of the present invention
Scope.
Claims (4)
1. a production technology for photovoltaic silicon line cutting waste material sintered silicon carbide ceramics, its feature
It is, comprises the following steps:
S1: by photovoltaic silicon line cutting waste material, carborundum, silicon, charcoal source and polyvinyl alcohol by proportioning
Mixing；
S2: by S1 gained mixture wet ball grinding, 110 mesh sieves crossed by slurry；
S3: S2 gained slurry is dried, dried pelletize and dry-pressing formed, obtain biscuit；
S4: the biscuit made is put into graphite crucible, fills biscuit silica flour, then exists
Vacuum high temperature furnace burns till, and firing temperature is 1600 DEG C, temperature retention time 30min,
In described S1 mixture solid weight, silicone content is 30～32%.
Photovoltaic silicon line the most according to claim 1 cutting waste material sintered silicon carbide ceramics
Production technology, it is characterised in that in described S4 landfill silica flour quality is biscuit quality 3～
5 times.
Photovoltaic silicon line the most according to claim 2 cutting waste material sintered silicon carbide ceramics
Production technology, it is characterised in that in described S1, the granularity of carborundum is 30～35 μm.
Photovoltaic silicon line the most according to claim 3 cutting waste material sintered silicon carbide ceramics
Production technology, it is characterised in that described charcoal source is at least one in white carbon black and aquadag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410747252.0A CN105884364A (en) | 2014-12-09 | 2014-12-09 | Production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410747252.0A CN105884364A (en) | 2014-12-09 | 2014-12-09 | Production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes |
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| Publication Number | Publication Date |
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| CN105884364A true CN105884364A (en) | 2016-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410747252.0A Pending CN105884364A (en) | 2014-12-09 | 2014-12-09 | Production process for sintering silicon carbide ceramics with photovoltaic silicon linear cutting wastes |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109809414A (en) * | 2019-03-25 | 2019-05-28 | 江苏中江材料技术研究院有限公司 | A kind of solar panel cutting waste material recycling processing method |
| CN116003135A (en) * | 2022-12-26 | 2023-04-25 | 何思义 | Preparation method of reaction sintering silicon carbide ceramic granulating powder |
| CN116425550A (en) * | 2023-06-09 | 2023-07-14 | 成都超纯应用材料有限责任公司 | Reaction sintering silicon carbide and wet forming preparation method thereof |
-
2014
- 2014-12-09 CN CN201410747252.0A patent/CN105884364A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109809414A (en) * | 2019-03-25 | 2019-05-28 | 江苏中江材料技术研究院有限公司 | A kind of solar panel cutting waste material recycling processing method |
| CN116003135A (en) * | 2022-12-26 | 2023-04-25 | 何思义 | Preparation method of reaction sintering silicon carbide ceramic granulating powder |
| CN116425550A (en) * | 2023-06-09 | 2023-07-14 | 成都超纯应用材料有限责任公司 | Reaction sintering silicon carbide and wet forming preparation method thereof |
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| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160824 |