CN105871350B - A kind of piezo-electric resonator of double narrow supporting beam high quality factors - Google Patents
A kind of piezo-electric resonator of double narrow supporting beam high quality factors Download PDFInfo
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- CN105871350B CN105871350B CN201610168600.8A CN201610168600A CN105871350B CN 105871350 B CN105871350 B CN 105871350B CN 201610168600 A CN201610168600 A CN 201610168600A CN 105871350 B CN105871350 B CN 105871350B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 150000003624 transition metals Chemical class 0.000 claims abstract description 6
- 238000004891 communication Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000007373 indentation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000010358 mechanical oscillation Effects 0.000 description 2
- 241000222712 Kinetoplastida Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention belongs to electronic science and technology fields, it is related to MEMS piezo-electric resonator, a kind of piezo-electric resonator of double narrow supporting beam high quality factors is provided, including vibrating mass, input terminal supporting beam, output end supporting beam, input terminal supporting table, output end supporting table and substrate, the vibrating mass passes through supporting beam and supporting table electrical communication, supporting table is set in substrate, external metal electrode is set in supporting table, the vibrating mass is by input terminal P-type semiconductor area, N-type semiconductor area is constituted, input terminal P-type semiconductor area is located at vibrating mass and input terminal supporting beam junction, the supporting beam for connecting each area of vibrating mass uses identical doping type with the corresponding area of vibrating mass, piezoelectric layer portion covers vibrating mass, notch is opened up partially to expose input terminal P-type semiconductor area, metal electrode connects input terminal by transition metal electrode on piezoelectric layer P-type semiconductor area.Structure of the invention can greatly reduce support beam width, the effective quality factor q for improving resonator.
Description
Technical field
The invention belongs to electronic science and technology fields, are related to radio-frequency micro electromechanical system (RF MEMS) device, especially MEMS
Piezo-electric resonator.
Background technique
Resonator is one of the Primary Component in electronic equipment, is at present mainly that quartz crystal is humorous used in electronic equipment
Shake device, but with the further requirement to electronic equipment high-performance, miniaturization, large volume, the high power consumption of quartz-crystal resonator
With can not become to highlight very much with the disadvantages of IC process compatible.MEMS piezo-electric resonator is a kind of based on micromechanical process and microcomputer
The high-performance resonator of tool vibration, it has the advantages that small in size, low-power consumption and IC process compatible, so that it is in system
There is good prospect during miniaturization.
Studying more MEMS resonator at present is mainly micromechanics piezoelectric resonator, this quasi resonant oscillator will input electricity
Signal is converted to mechanical signal by energy converting structure, then by energy converting structure mechanical signal to be converted to electric signal defeated
Out；The piezoelectric layer and vibrating mass of the quasi resonant oscillator are an entirety, due to the channel for needing to input, export and be grounded, are led to
Frequently with the growth layer of silicon dioxide insulating layer in supporting beam, then metal connection cabling is etched on the insulating layer and is connected to outside
Portion's supporting table；Due to each material layer in etching there are alignment error, it is superfluous that subsurface material needs that there are edges in design
It is remaining to prevent upper layer of material from collapsing as caused by misalignment, it is this to design the width that will cause the undermost monocrystalline silicon of supporting beam
Degree has more energy to pass through branch at anchor point much larger than the minimum feature of topmost metal layer when resonator mechanical oscillation
Support beam dissipates away, increases so that the anchor point of resonator is lost, to seriously limit the raising of resonator quality factor Q, gesture
The further promotion of resonator behavior must be impacted.
Summary of the invention
The purpose of the present invention is provide a kind of pressure of double narrow supporting beam high quality factors for deficiency existing for background technique
Electrical resonator, in the gross energy E of vibrating mass storagesIn the case where certain, reduce anchor by substantially reducing the width of supporting beam
Point loss, reaches and reduces dissipation ENERGY E in each vibration perioddPurpose, to promote the quality factor q of resonator:
To achieve the above object, the technical solution of the present invention is as follows:
A kind of piezo-electric resonator of double narrow supporting beam high quality factors, including vibrating mass, input terminal supporting beam 2-1, output
Hold supporting beam 2-2, input terminal supporting table 5-1, output end supporting table 5-2 and substrate, the vibrating mass passes through input terminal, output
Hold supporting beam 2-1,2-2 respectively with corresponding input, output end supporting table 5-1,5-2 electrical communication, the input, output end
Supporting table 5-1,5-2, which respectively corresponds, to be set in substrate 8-1,8-2, is respectively set in supporting table 5-1,5-2 of input, output end
External metal electrode 6-1,6-2, are equipped with insulating oxide 7-1,7-2 between input, output end supporting table and substrate；It is special
Sign is that the vibrating mass is made of input terminal P-type semiconductor area 1-1, N-type semiconductor area 1-2, and the input terminal p-type is partly led
Body area 1-1 is located at vibrating mass and the junction input terminal supporting beam 2-1, and the supporting beam for connecting vibrating mass distinguishes coupled vibration
Block is corresponded to area and is used using identical doping type, i.e., the described input terminal supporting beam (2-1) and input terminal P-type semiconductor area (1-1)
Identical doping type, the output end supporting beam (2-2) doping type identical as (1-2) use of N-type semiconductor area, on vibrating mass
Cover piezoelectric layer 3,3 part of piezoelectric layer cover vibrating mass and be located above input terminal P-type semiconductor area 1-1 open up it is scarce
Metal electrode 4 is arranged partially to expose input terminal P-type semiconductor area in mouth on piezoelectric layer 3,3 indentation, there of the piezoelectric layer setting connects
Connect the transition metal electrode 9 of metal electrode 4 and input terminal P-type semiconductor area 1-1.
Further, the vibrating mass is formed by silicon crystal by heavy doping technique, input terminal P-type semiconductor area 1-
1 is formed by pentad heavy doping, and the N-type semiconductor area 1-2 is formed by triad heavy doping.
The piezoelectric layer 3 is piezoelectric membrane.
From working principle, a kind of piezo-electric resonator of double narrow supporting beam high quality factors provided by the invention, due to
The present invention uses two support beam structures, therefore setting vibration is first-order modal；If the length of vibrating mass is L, according to First-Order Mode
The supporting beam center of the stretching vibration situation of state, vibrating body side is located at 1/2L, and sets support beam width as Wt；Using silicon wafer
Body doping production vibrating mass, supporting beam 2-1 and 2-2 and corresponding supporting table 5-1 and 5-2；Resonance frequency f is adulterated by silicon crystal
Length L, Young's modulus E and density of material ρ and mode of oscillation the n decision of vibrating mass 1-1 and 1-2, relational expression are as follows:
Due to Young's modulus E and density of material ρ be it is certain, since vibration is in first-order modal, therefore n=1；Therefore, resonance
The centre frequency f of device design can be determined that specific value can be in several microns to several hundred microns freely by its design length L
Selection.
A kind of piezo-electric resonator of double narrow supporting beam high quality factors provided by the invention, the input terminal 1-1's of vibrating mass
Silicon heavy doping is p-type, and the 1-2 silicon heavy doping of remaining region is N-type；Meanwhile metal electrode 4 and input terminal p type island region domain 1-1 are with Europe
The mode of nurse contact is connected, and the contact surface resistance of Ohmic contact can be with much smaller than the resistance of semiconductor itself, therefore electric current
Metal electrode is passed to by the carrier in doped semiconductor；Piezoelectric membrane 3 is by the N-type semiconductor of metal electrode 4 and vibrating mass
Region 1-2 is separated, and is formed input and is isolated with what is exported；The voltage magnitude of relative input signal, the forward conduction voltage of PN junction compared with
Height, therefore signal will not pass to vibrating mass n-type region 1-2 by PN junction, but pass through the gold of connection vibrating mass and piezoelectric membrane
Belong to electrode 9 and pass to metal electrode 4, then output signal is passed to by vibrating mass n-type region 1-2 by the resonance of vibrating mass 1-1 and 1-2
It finally exports, forms input complete signal access.
When resonator works, input signal enters resonator from external metal electrode 6-1, since semiconductor regions are attached most importance to
Doping, therefore signal reaches vibrating mass input area 1-1 by supporting table 5-1, supporting beam 2-1 by carrier, due to semiconductor
With the Ohmic contact mode of metal so that the resistance value of contact surface be much smaller than semiconductor itself resistance, and due to PN junction have compared with
High conducting voltage, therefore input signal will pass to metal electrode 4 by the metal electrode 9 of connection vibrating mass and piezoelectric membrane,
Cause the frequency with input signal of piezoelectric membrane 3 to be vibrated, drives vibrating mass 1-1 and 1-2 to generate resonance, thus in vibrating mass N
Type region 1-2 generates induced electromotive force, i.e. generation output signal, and output signal is reached outer by supporting beam 2-2, supporting table 5-2
Connect metal electrode 6-2 outflow resonator.
The piezo-electric resonator of a kind of double narrow supporting beam high quality factors provided by the invention, due to no longer needing in supporting beam
Layer of silicon dioxide insulating layer is grown on 2-1 and 2-2, then is etched metal connection cabling on the insulating layer and be connected to outside, because
Three mask plates are needed when the supporting beam etching of this traditional resonator structure, need to stay when designing the mask plate line width of subsurface material
There is redundant wide to prevent alignment error, therefore supports beam width larger；And this patent is designed, it is only necessary to be covered using one
Film version performs etching, so that it may entire support beam structure is obtained, so that the width Wt of supporting beam 2-1 and 2-2 can reduce to 1 to 2
Micron；Since anchor point is connected with vibrating body, during vibrating body mechanical oscillation, constantly there is energy to dissipate out by anchor point and shake
Kinetoplast, so that dissipation ENERGY E in each vibration perioddIncrease, reduces Q value.Therefore, using structure of the present invention, significantly
It reduces by the biggish width bring anchor point loss of traditional support beam, effectively raises the quality factor q of resonator.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram (west of the piezo-electric resonator of double narrow supporting beam high quality factors provided by the invention
Southern isometric side view).
Fig. 2 is the due south top view of Fig. 1.
Fig. 3 is A-A ' line interface schematic diagram in Fig. 2.
Fig. 4 is that the structure in Fig. 2 after concealed metal electrode 4, transition metal electrode 9 and external metal electrode 6-1 and 6-2 is shown
It is intended to (top view).
Fig. 5 is after hiding piezoelectric layer 3, metal electrode 4, transition metal electrode 9 and external metal electrode 6-1 and 6-2 in Fig. 2
Structural schematic diagram (top view).
Fig. 6 is a kind of equivalent circuit diagram of the piezo-electric resonator of double narrow supporting beam high quality factors provided by the invention.
Fig. 7 is the corresponding relationship of the quality factor emulated in embodiment and support beam width.
In figure: 1-1 and 1-2 indicates that vibrating mass, 2-1 and 2-2 indicate supporting beam, and 3 indicate piezoelectric membrane, and 4 indicate metal electricity
Pole, 5-1 and 5-2 indicate supporting table, and 6-1 and 6-2 indicate that external metal electrode, 7-1 and 7-2 indicate insulating oxide, 8-1 and 8-
2 indicate substrate, and 9 indicate transition metal electrode, and 10 indicate the substrate cavity generated after etching.
Specific embodiment
Invention is further described in detail in the following with reference to the drawings and specific embodiments.
The piezo-electric resonator of a kind of narrow supporting beam high quality factor provided in this embodiment, to work in 1 rank mode
For 10MHz resonator design, resonator length L is about 420um；It is made of SOI Substrate, SOI Substrate is by thicker polycrystalline
The monocrystal silicon structure layer of silicon base (about 500um), the silicon dioxide insulating layer of 1 μ m-thick and 10 μ m thicks forms.
Its structure is as Figure 1-Figure 5, the piezo-electric resonator of double narrow supporting beam high quality factors, including vibrating mass, input
Hold supporting beam 2-1, output end supporting beam 2-2, input terminal supporting table 5-1, output end supporting table 5-2 and substrate, the vibrating mass
By input, output end supporting beam 2-1,2-2 respectively with corresponding input, output end supporting table 5-1,5-2 electrical communication, institute
It states input, output end supporting table 5-1,5-2 and respectively corresponds and be set in substrate 8-1,8-2, input, output end supporting table 5-
1, external metal electrode 6-1,6-2 are respectively set on 5-2, insulation oxygen is equipped between input, output end supporting table and substrate
Change layer 7-1,7-2；It is characterized in that, the vibrating mass is made of (such as input terminal P-type semiconductor area 1-1, N-type semiconductor area 1-2
Shown in Fig. 5), input terminal P-type semiconductor area 1-1 is located at vibrating mass and the junction input terminal supporting beam 2-1, connects vibrating mass
The supporting beam in each area uses identical doping type with the corresponding area of vibrating mass, and whether corresponding supporting table uses identical doping type
, and identical doping type is used in the present embodiment, i.e. input terminal supporting beam 2-1 and input terminal supporting table 5-1 and input terminal P
Type semiconductor region uses identical doping type, is P-type semiconductor, output end supporting beam 2-2 and output end supporting table 5-2 and N-type
Semiconductor region uses identical doping type, is N-type semiconductor；Piezoelectric membrane 3 is covered on vibrating mass, 3 part of piezoelectric layer is covered
Lid vibrating mass (i.e. piezoelectric membrane is dimensioned slightly smaller than vibrating mass) and be located at input terminal P-type semiconductor area 1-1 above opening up notch
Partially to expose input terminal P-type semiconductor area (as shown in Figure 4), metal electrode 4 is set, and 4 size of metal electrode is omited on piezoelectric layer 3
Less than piezoelectric membrane 3, the transition of the setting of 3 indentation, there of piezoelectric layer the connection metal electrode 4 and input terminal P-type semiconductor area 1-1
Metal electrode 9.
The anchor point loss of different supporting beam width resonance devices is emulated using finite element analysis software COMSOL, specifically
Emulation mode are as follows: the pedestal boundary of practical infinity is simulated by the way that the entity of a circle perfect domination set is arranged around anchor point,
The vibrational energy propagated out from anchor point can be realized into unreflected hypersorption；Support deck-siding is set when constructing mechanical model as one
Definite value applies the voltage signal of equal-wattage different frequency in input terminal electrode, and amplitude-frequency of available output signal is rung
It answers；Output signal power point of maximum intensity frequency is resonant frequency point f0, the output signal power decaying of the resonant frequency point left and right sides
Frequency for peak power half is respectively f1,f2；Three dB bandwidth can be by f2-f1It obtains, further according to the definition Q of quality factor
=f0/(f2-f1), corresponding quality factor under the support beam width can be calculated.By to multiple supporting beam width values
Model emulation calculates, and obtains quality factor and supports the corresponding relationship of beam width, as shown in Figure 7: when support beam width is 2um
When, quality factor reach 207300,15 times of quality factor when about support beam width is 10um.Based on this it is found that the present invention
Structure can significantly improve the quality factor q of resonator.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (2)
1. a kind of piezo-electric resonator of double narrow supporting beam high quality factors, including vibrating mass, input terminal supporting beam (2-1), output
Hold supporting beam (2-2), input terminal supporting table (5-1), output end supporting table (5-2) and substrate, the vibrating mass by input terminal,
Output end supporting beam (2-1,2-2) respectively with corresponding input, output end supporting table (5-1,5-2) electrical communication, the input
End, output end supporting table (5-1,5-2) are correspondingly arranged on substrate (8-1,8-2), input, output end supporting table (5-1,5-
2) external metal electrode (6-1,6-2) is respectively set on, is equipped with insulating oxide between input, output end supporting table and substrate
Layer (7-1,7-2)；It is characterized in that, the vibrating mass is by input terminal P-type semiconductor area (1-1), N-type semiconductor area (1-2) structure
Be located at vibrating mass and the junction input terminal supporting beam (2-1) at, input terminal P-type semiconductor area (1-1), vibrating mass remaining
Region is N-type semiconductor area (1-2) and N-type semiconductor area (1-2) and output end supporting beam (2-2), connects the support of vibrating mass
Beam distinguishes coupled vibrating mass and corresponds to area using identical doping type, covers piezoelectric layer (3) on vibrating mass, the piezoelectric layer
(3) part covers vibrating mass and is opening up notch being located above input terminal P-type semiconductor area (1-1) partially to expose input terminal P
Metal electrode (4) are arranged on piezoelectric layer (3) in type semiconductor region, piezoelectric layer (3) indentation, there setting connection metal electrode (4)
With the transition metal electrode (9) in input terminal P-type semiconductor area (1-1)；The piezoelectric layer (3) is by metal electrode (4) and vibrating mass
N-type semiconductor area (1-2) separate, formed input with export is isolated.
2. by the piezo-electric resonator of double narrow supporting beam high quality factors described in claim 1, which is characterized in that the vibrating mass and
It corresponds to connected input, output end supporting beam and is formed by silicon crystal by heavy doping technique, the input terminal P-type semiconductor
Area (1-1) and input terminal supporting beam (2-1) are formed by pentad heavy doping, the N-type semiconductor area (1-2) and output end
Supporting beam (2-2) is formed by triad heavy doping.
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| CN106982042B (en) * | 2017-03-20 | 2020-06-16 | 电子科技大学 | MEMS piezoelectric resonator with supporting structure |
| CN111559734B (en) * | 2020-05-20 | 2023-07-21 | 内江师范学院 | Manufacturing method of multi-frequency CMUT device and multi-frequency CMUT device |
| CN113364423B (en) * | 2021-05-27 | 2023-11-10 | 广州乐仪投资有限公司 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
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| CN101939906A (en) * | 2007-12-11 | 2011-01-05 | 康奈尔大学 | Resonant body transistor and oscillator |
| CN102187573A (en) * | 2008-10-14 | 2011-09-14 | Nxp股份有限公司 | Frame-shaped mems piezoresistive resonator |
| CN104821800A (en) * | 2015-04-28 | 2015-08-05 | 电子科技大学 | Micro-electromechanical system (MEMS) piezoelectric resonator utilizing double resonance elements to offset feed-through flux |
| CN104821799A (en) * | 2015-04-28 | 2015-08-05 | 电子科技大学 | Piezoelectric type two-block cascaded micro mechanical filter |
| CN105375901A (en) * | 2015-12-03 | 2016-03-02 | 电子科技大学 | MEMS piezoelectric resonator for inhibiting stray modality and feed through |
| CN105391420A (en) * | 2015-12-03 | 2016-03-09 | 电子科技大学 | MEMS piezoelectric resonator with low insertion loss |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI459630B (en) * | 2010-09-15 | 2014-11-01 | Ind Tech Res Inst | Microelectromechanical filter |
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- 2016-03-22 CN CN201610168600.8A patent/CN105871350B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101939906A (en) * | 2007-12-11 | 2011-01-05 | 康奈尔大学 | Resonant body transistor and oscillator |
| CN102187573A (en) * | 2008-10-14 | 2011-09-14 | Nxp股份有限公司 | Frame-shaped mems piezoresistive resonator |
| CN104821800A (en) * | 2015-04-28 | 2015-08-05 | 电子科技大学 | Micro-electromechanical system (MEMS) piezoelectric resonator utilizing double resonance elements to offset feed-through flux |
| CN104821799A (en) * | 2015-04-28 | 2015-08-05 | 电子科技大学 | Piezoelectric type two-block cascaded micro mechanical filter |
| CN105375901A (en) * | 2015-12-03 | 2016-03-02 | 电子科技大学 | MEMS piezoelectric resonator for inhibiting stray modality and feed through |
| CN105391420A (en) * | 2015-12-03 | 2016-03-09 | 电子科技大学 | MEMS piezoelectric resonator with low insertion loss |
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