CN105870352B - A kind of thin-film packing structure of display panel and preparation method thereof - Google Patents
A kind of thin-film packing structure of display panel and preparation method thereof Download PDFInfo
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- CN105870352B CN105870352B CN201610211456.1A CN201610211456A CN105870352B CN 105870352 B CN105870352 B CN 105870352B CN 201610211456 A CN201610211456 A CN 201610211456A CN 105870352 B CN105870352 B CN 105870352B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides thin-film packing structures of a kind of display panel and preparation method thereof.The thin-film packing structure includes the metal/inorganic passivation layer, buffer layer and the second passivation layer being successively set on luminescent device top electrode, wherein, metal/the inorganic passivation layer is made of metal sealing grid and the multiple independent inorganic passivation units being distributed in the metal sealing grid, and the light emitting region of the luminescent device is completely covered in the inorganic passivation unit, the top electrode surface for not covering the inorganic passivation unit is arranged in the metal sealing grid.
Description
Technical field
The invention belongs to the thin-film packing structures and its preparation of technical field of flat panel display more particularly to a kind of display panel
Method.
Background technique
In the present age of information-intensive society, the importance of the display as visual information transmission medium is being further strengthened.For
Leading position will be occupied in future, and display is just towards lighter, thinner, more low energy consumption, more inexpensive and more preferable picture quality
Trend development.
Organic electroluminescent LED (OLED) due to it with self-luminous, reaction is fast, visual angle is wide, brightness is high, frivolous etc.
Advantage, market potential prospect are had an optimistic view of by industry, most probably develop as the mainstream of next-generation display technology.But OLED device
Part is more sensitive to water, oxygen, and water, the infiltration of oxygen are very big to the aging effects of device, it is therefore desirable to carry out stringent encapsulation.At present
More the encapsulation technology in forward position is thin-film package, and this method passes through inorganic barrier (passivation) layer and organic buffer (buffering)
Layer is overlapped mutually to form packaging film, this is a kind of encapsulation technology more practical in current Flexible Displays.But due to inorganic
Barrier layers of ductility are poor, and crackle is still easy to produce in flexible bending, water oxygen is caused to be penetrated into.Therefore, the prior art needs
It improves and develops.
Summary of the invention
The purpose of the present invention is to provide a kind of thin-film packing structures of display panel, it is intended to solve the existing of display panel
Encapsulation technology due to inorganic barrier layers of ductility, be easy to produce crackle in flexible bending, water oxygen caused to be penetrated into the problem of.
Another object of the present invention is to provide a kind of preparation methods of the thin-film packing structure of display panel.
The invention is realized in this way a kind of thin-film packing structure of display panel, including it is successively set on luminescent device
Metal/inorganic passivation layer, buffer layer and the second passivation layer on top electrode, wherein the metal/inorganic passivation layer is close by metal
Block lattice and the multiple independent inorganic passivation unit compositions being distributed in the metal sealing grid, and the inorganic passivation is single
The light emitting region of the luminescent device is completely covered in member, and the metal sealing grid setting is not covering the inorganic passivation unit
Top electrode surface.
And a kind of preparation method of the thin-film packing structure of display panel, comprising the following steps:
Luminescent device is provided；
Patterned inorganic passivation is prepared on the light emitting region of the luminescent device top electrode using inorganic passivating material
Unit；
Metal sealing grid is prepared in the top electrode surface filling metal material for not covering the inorganic passivation unit, it is described
Metal sealing grid and the inorganic passivation unit form metal/inorganic passivation layer；
Buffer layer and the second passivation layer are successively formed on the metal/inorganic passivation layer.
The thin-film packing structure of display panel provided by the invention is provided with inorganic passivating material and metal sealing grid phase
In conjunction with metal/inorganic passivation layer structure, and the inorganic passivating material be completely covered the luminescent device light emitting region, dew
Part driving wiring area out, so that the multiple subregions distributed in the grid of the metal sealing grid are independent inorganic
It is passivated unit.It is good to assign the metal/inorganic passivation layer for the water oxygen barrier property of the good ductility of metal and inorganic passivating material
Good ductility and reliability, and then the flexible characteristic of entire encapsulating structure is improved, even if so that the display panel is in flexibility
Also water oxygen barrier property can be effectively ensured under bending condition.Meanwhile the top electrode electricity phase of the metal sealing grid and luminescent device
Even, therefore, it can be used as the electric conductivity of auxiliary electrode enhancing top electrode, and then improve the uniformity of luminance of display panel.
The preparation method of the thin-film packing structure of display panel provided by the invention, it is easy to operate, method is easily-controllable, have compared with
Good market prospects.
Detailed description of the invention
Fig. 1 is the thin-film packing structure schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 2 is luminescent device schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram provided in an embodiment of the present invention formed after inorganic passivation unit on luminescent device；
Fig. 4 is that provided in an embodiment of the present invention on the top electrode surface for not covering the inorganic passivation unit, to prepare metal close
Structural schematic diagram after block lattice；
Fig. 5 is the overlooking renderings of structure shown in Fig. 4 provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram provided in an embodiment of the present invention on metal/inorganic passivation layer after formation buffer layer；
Fig. 7 is the structural schematic diagram provided in an embodiment of the present invention formed after the second passivation layer on the buffer layer.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In conjunction with Fig. 1, the embodiment of the invention provides a kind of thin-film packing structures of display panel, including are successively set on hair
Metal/inorganic passivation layer 2, buffer layer 3 and the second passivation layer 4 on the top electrode 16 of optical device 1, wherein the metal/inorganic
Passivation layer 2 is by metal sealing grid 22 and the multiple independent inorganic passivation units 21 being distributed in the metal sealing grid 22
Composition, and the light emitting region 15 of the luminescent device 1, the metal sealing grid 22 is completely covered in the inorganic passivation unit 21
16 surface of top electrode for not covering the inorganic passivation unit 21 is set.
In the embodiment of the present invention, the structure of the luminescent device 1 is the emitting device structure of this field routine, specific part
Structure can refer to shown in Fig. 1, wherein 11 be flat passivation layer, and 12 be TFT, and 13 be hearth electrode, and 14 be bank, and 15 be luminous zone
Domain, 16 be top electrode, and the luminescent device 1 is produced on substrate 0.
Metal/the inorganic passivation layer 2 includes that multiple independent inorganic passivation units 21 and setting are not covering the nothing
Machine is passivated the metal sealing grid 22 on 16 surface of top electrode of unit 21.Wherein, the inorganic passivation unit 21 covers completely
Cover the light emitting region 15 of the luminescent device 1, at the same expose between the light emitting region 15 part driving wiring area (due to
The inorganic passivation unit 21 needs to be completely covered the light emitting region 15, and therefore, the inorganic passivation unit 21 is inevitable
It can be arranged in and drive wiring area with the adjacent part in the light emitting region 15).The area of the light emitting region 15 is not covered as a result,
Domain forms interconnected grid, which is separated into multiple individually discontinuous sections for the light emitting region 15.Relatively
Entire luminescent device, since the area of the single inorganic passivation unit 21 is substantially reduced, curved in display panel
Do not allow to be also easy to produce uncontrollable slight crack in the process.As a particular preferred embodiment, the material of the inorganic passivation unit 21
Including but not limited at least one of aluminium oxide, silica, silicon nitride, silicon oxynitride；As another specific preferred implementation
Example, it is described it is inorganic passivation unit with a thickness of 0.1-1 μm.
At the same time, the gap that the inorganic passivation unit 2 leaves, Ke Yiyou are filled by the metal sealing grid 22
Effect prevents water, oxygen from penetrating into from this region.In addition, importantly, due to the good ductility of metal material, so that forming connection
The network-like metal sealing grid 22 can assign entire display panel good flexible characteristic, to be effectively relieved or keep away
Exempt from display panel to crack because flexible bending occurs and then water oxygen is caused to penetrate into the adverse effect to its performance.In addition, by
The top electrode 16 of the metal sealing grid 22 described in the embodiment of the present invention and luminescent device 1 is electrically connected, therefore, the metal sealing
Grid 22, which is also used as auxiliary electrode, enhances the electric conductivity of the top electrode 16, and then improves the luminous uniform of display panel
Property.As specific embodiment, conventional electrode material is can be used in the material of the metal sealing grid 22, is specifically included but not
It is limited to the metal materials such as aluminium, silver, copper.
As a preferred embodiment, the top surface edge of the inorganic passivation unit 21 is provided with the groove 211 of opening upwards.
It is further preferred that the material of the metal sealing grid 22 fills the groove 211, so that the metal sealing grid 22
Two sides are respectively formed two corresponding with 211 structure of groove raised subordinate lines.The preferred structure, can increase metal and nothing
The contact area of machine passivating material, to enhance the boundary strength between them, metal when effectivelying prevent panel bending
The contact interface for sealing grid 22 and the inorganic passivation unit 21 generates slight crack, and water oxygen is caused to be penetrated into.As further excellent
Select embodiment, the height of the metal sealing grid 22 is higher than the height of the inorganic passivation unit 21, as a result, the metal/
Inorganic passivation layer 2, the buffer layer 3 and second passivation layer 4 are respectively formed wavy concaveconvex structure.The wavy concave-convex knot
Structure increases the contact area between second passivation layer 4 and the buffer layer 3, increases described to a certain extent
Binding force between two passivation layers 4 and the buffer layer 3, and then enhance the reliability of entire thin-film packing structure.
As another preferred embodiment, in order to enable the filling of the metal material is more abundant, the inorganic passivation is single
The section of member 21 is trapezoid cross section, i.e., the section of the described metal sealing grid 22 is inverted trapezoidal, is conducive to the filling of metal material.
In the embodiment of the present invention, the buffer layer 3 is arranged on the metal/inorganic passivation layer 2, and is completely covered described
Metal/inorganic passivation layer 2.The buffer layer 3 is prepared by organic material, specifically, the organic material can be selected organosilicon or
At least one of polyacrylate type organic.The thickness of the buffer layer 3 can refer to conventional buffer layer thickness and be set
Set, as the specific embodiment of the invention, the buffer layer 3 with a thickness of 0.5-3 μm.
In the embodiment of the present invention, second passivation layer 4 is arranged on the buffer layer 3, the material of second passivation layer 4
Material is inorganic passivating material, and inorganic material identical with the inorganic passivation unit 21 may be selected in the inorganic passivating material.Tool
Body, the material of second passivation layer 4 is at least one of aluminium oxide, silica, silicon nitride, silicon oxynitride.Described
The thickness of two passivation layers 4 can refer to conventional passivation layer thickness and be configured, and as the specific embodiment of the invention, described second is blunt
Change layer 4 with a thickness of 0.1-1 μm.
The thin-film packing structure of display panel provided in an embodiment of the present invention is provided with inorganic passivating material and metal sealing
The metal that grid combines/inorganic passivation layer structure, and shining for the luminescent device is completely covered in the inorganic passivating material
Part driving wiring area is exposed in region, so that the multiple subregions distributed in the grid of the metal sealing grid are only
Vertical inorganic passivation unit.The water oxygen barrier property of the good ductility of metal and inorganic passivating material assigns the metal/inorganic
The good ductility of passivation layer and reliability, and then the flexible characteristic of entire encapsulating structure is improved, so that the display panel is
Just water oxygen barrier property can also be effectively ensured under the conditions of flexible bending.Meanwhile the top of the metal sealing grid and luminescent device
Electrode is electrically connected, and therefore, can be used as the electric conductivity of auxiliary electrode enhancing top electrode, and then improves the luminous uniform of display panel
Property.
The thin-film packing structure of display panel described in the embodiment of the present invention can be prepared by following methods.
And referring to Fig.1-7, the embodiment of the invention also provides a kind of preparation sides of the thin-film packing structure of display panel
Method, comprising the following steps:
S01., luminescent device 1 is provided；
S02. it is prepared on the light emitting region of 1 top electrode of luminescent device using inorganic passivating material patterned inorganic
It is passivated unit 21；
S03. metal sealing net is prepared in the top electrode surface filling metal material for not covering the inorganic passivation unit 21
Lattice 22, the metal sealing grid 22 form metal/inorganic passivation layer 2 with the inorganic passivation unit 21；
S04. buffer layer 3 and the second passivation layer 4 are successively formed on the metal/inorganic passivation layer 2.
Specifically, in above-mentioned steps S01, the luminescent device is conventional luminescent device in conjunction with Fig. 2, specifically such as serving as a contrast
The luminescent device 1 made on bottom 0.
In conjunction with Fig. 3, in above-mentioned steps S02, the luminous zone of the luminescent device 1 is completely covered in the inorganic passivation unit 21
Domain, and the wiring region for driving current wiring between the light emitting region is partially in since no inorganic passivating material covers
Lid, therefore, forms connected network structure.The region division that the network structure will be covered with inorganic passivating material is multiple independences
The inorganic passivation unit 21, form patterned nothing on the top electrode (not marking in figure) of the luminescent device 1 as a result,
Machine is passivated unit 21.
As a preferred embodiment, perform etching processing in the top surface edge of the inorganic passivation unit, formed be open to
On groove 211, in order to fill metal material in the groove 211, and then increase connecing for metal and inorganic passivating material
Contacting surface product, enhances boundary strength between the two, effectively prevent the metal sealing net that following step is formed when panel bending
The contact interface of lattice 22 and the inorganic passivation unit 21 generates slight crack.
In above-mentioned steps S03, in the top electrode surface filling metal material preparation for not covering the inorganic passivation unit 21
Metal sealing grid 22, the metal sealing grid 22 be completely covered without it is described it is inorganic passivation unit 21 region, and with it is described
Inorganic passivation unit 21 forms metal/inorganic passivation layer 2.As a preferred embodiment, the metal sealing grid 22 is being prepared
It further include the filling metal material in the groove (not marked in Fig. 4, Fig. 5) in step.Thus obtained structure is as schemed
4, shown in Fig. 5, wherein Fig. 4 is longitudinal section structure chart, and Fig. 5 is corrosive effect figure.
In conjunction with Fig. 6, Fig. 7, in above-mentioned steps S04, buffer layer 3 is formed on the metal/inorganic passivation layer 2 (such as Fig. 6 institute
Show) and the second passivation layer 4 (as shown in Figure 7) method can using conventional method realize, such as use PECVD or IJP technique system
The standby buffer layer 3.
Partial enlargement structure (Fig. 7 dotted line part of the thin-film packing structure of the display panel prepared through the embodiment of the present invention
Divide amplification) as shown in Figure 1.
The preparation method of the thin-film packing structure of display panel provided in an embodiment of the present invention, it is easy to operate, method is easily-controllable,
With preferable market prospects.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of thin-film packing structure of display panel, which is characterized in that including being successively set on luminescent device top electrode
Metal/inorganic passivation layer, buffer layer and the second passivation layer, wherein the metal/inorganic passivation layer is by metal sealing grid and divides
The multiple independent inorganic passivation unit compositions being distributed in the metal sealing grid, and the inorganic passivation unit is completely covered
The top electrode table for not covering the inorganic passivation unit is arranged in the light emitting region of the luminescent device, the metal sealing grid
Face makes the top electrode of the metal sealing grid and luminescent device be electrically connected.
2. the thin-film packing structure of display panel as described in claim 1, which is characterized in that it is described it is inorganic passivation unit it is upper
Marginal surface is provided with the groove of opening upwards.
3. the thin-film packing structure of display panel as claimed in claim 2, which is characterized in that the metal sealing grid filling
The groove.
4. the thin-film packing structure of display panel a method according to any one of claims 1-3, which is characterized in that the metal sealing net
The height of lattice is higher than the height of the inorganic passivation unit, the metal/inorganic passivation layer, the buffer layer and described second blunt
Change layer and is respectively formed wavy concaveconvex structure.
5. the thin-film packing structure of display panel a method according to any one of claims 1-3, which is characterized in that the inorganic passivation is single
The section of member is trapezoid cross section.
6. the thin-film packing structure of display panel a method according to any one of claims 1-3, which is characterized in that the inorganic passivation is single
The material of first, described second passivation layer is all at least one of aluminium oxide, silica, silicon nitride, silicon oxynitride；And/or
It is described it is inorganic passivation unit, second passivation layer thickness be all 0.1-1 μm.
7. the thin-film packing structure of display panel a method according to any one of claims 1-3, which is characterized in that the material of the buffer layer
Material is one of organosilicon or polyacrylate type organic；And/or
The buffer layer with a thickness of 0.5-3 μm.
8. a kind of preparation method of the thin-film packing structure of display panel, comprising the following steps:
Luminescent device is provided；
Patterned inorganic passivation unit is prepared on the light emitting region of the luminescent device top electrode using inorganic passivating material；
Metal sealing grid, the metal are prepared in the top electrode surface filling metal material for not covering the inorganic passivation unit
It seals grid and the inorganic passivation unit forms metal/inorganic passivation layer；
Buffer layer and the second passivation layer are successively formed on the metal/inorganic passivation layer.
9. the preparation method of the thin-film packing structure of display panel as claimed in claim 8, which is characterized in that described inorganic
The top surface edge of passivation unit performs etching processing, forms the groove of opening upwards.
10. the preparation method of the thin-film packing structure of display panel as claimed in claim 9, which is characterized in that in preparation institute
In the step of stating metal sealing grid, further include the steps that the metal material filling the groove.
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| CN108538899B (en) * | 2018-05-04 | 2020-07-24 | 云谷（固安）科技有限公司 | Display panel and display screen |
| CN109461826B (en) * | 2018-08-29 | 2020-08-14 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN109256482B (en) * | 2018-08-31 | 2020-08-14 | 云谷（固安）科技有限公司 | Display panel and method for manufacturing the same |
| CN109192858B (en) * | 2018-09-19 | 2020-04-28 | 京东方科技集团股份有限公司 | Flexible substrate, array substrate, display panel, preparation method and display device |
| CN113270466B (en) * | 2021-05-25 | 2023-04-07 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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| KR101149433B1 (en) * | 2009-08-28 | 2012-05-22 | 삼성모바일디스플레이주식회사 | Flexible display and method for manufacturing the same |
| KR101320384B1 (en) * | 2011-06-30 | 2013-10-23 | 삼성디스플레이 주식회사 | Flexible display panel and the display apparatus comprising the flexible display panel |
| US20130056068A1 (en) * | 2011-09-06 | 2013-03-07 | Korea Institute Of Science And Technology | Preparation method of flexible electrodes and flexible dye-sensitized solar cells using the same |
| CN104022139B (en) * | 2014-05-30 | 2016-03-30 | 京东方科技集团股份有限公司 | A kind of organic EL display panel and display unit |
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