CN105870036A - FinFet device source and drain epitaxial equipment and method - Google Patents
FinFet device source and drain epitaxial equipment and method Download PDFInfo
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- CN105870036A CN105870036A CN201510028853.0A CN201510028853A CN105870036A CN 105870036 A CN105870036 A CN 105870036A CN 201510028853 A CN201510028853 A CN 201510028853A CN 105870036 A CN105870036 A CN 105870036A
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Abstract
The invention provides FinFet device source and drain epitaxial equipment and a method. The equipment comprises a main chamber, at least one wafer loading chamber, a transfer chamber internally provided with a mechanical arm, at least one corrosion chamber provided with a graphite pedestal, at least one epitaxial reaction chamber, a gas distribution device used for supplying gas to the main chamber, the wafer loading chambers, the transfer chamber, the corrosion chambers and the epitaxial reaction chambers, and a vacuum-pumping device used for performing vacuum-pumping on the equipment. The wafer loading chambers, the transfer chamber, the corrosion chambers and the epitaxial reaction chambers are arranged in the main chamber. According to the FinFet device source and drain epitaxial equipment, the corrosion chambers and the epitaxial reaction chambers are integrated together, and a natural oxide layer on the surface of wafers can be removed before performance of epitaxial reaction under the condition of water and oxygen isolation so that contact of water and oxygen and the surface of the wafers can be better isolated, the natural oxide layer can be prevented from being generated on the surface of the wafers again, and thus selectivity of the epitaxial technology and reliability of the device can be enhanced.
Description
Technical field
The present invention relates to field of semiconductor device preparation, particularly to a kind of FinFet device source and drain extension
Apparatus and method for.
Background technology
Fin-FET is the transistor with fin channel structure, and it utilizes several surfaces of thin fin as ditch
Road, such that it is able to prevent the short-channel effect in conventional transistor, can increase operating current simultaneously.
At present, in the device fabrication of FinFet, in order to increase the mobility of carrier to meet
The requirement of device speed, generally introduces different in the source and drain areas of NMOS and PMOS transistor
Material, to introduce raceway groove by pressure.Common practice is, for PMOS device, in the source and drain of fin
Region Epitaxial growth goes out the stressor layers of SiGe, owing to SiGe lattice paprmeter is more than Si, therefore this stress
Layer can apply pressure to channel region；For nmos device, the source and drain areas Epitaxial growth at fin goes out
The stressor layers of Si:C, owing to the lattice paprmeter of Si:C is less than Si, therefore channel region is carried by this stressor layers
For tension force.
Epitaxy technique is to grow the strain gauge materials such as SiGe, Ge, SiC, GeSn on semi-conducting material
Method.In the source-drain area epitaxy technique of FinFet, be selective on the source and drain areas of fin outside
Prolong stress film, before carrying out extension, need the nature in epi region (the Si region of exposure)
Oxide layer is removed.
The existing method removing removing natural oxidizing layer mainly includes high-temperature baking (Baking) and Fluohydric acid.
(HF-last) aftertreatment technology.When wherein high temperature barbecue normal plane is to the thickest oxide layer, the height of needs
Temperature (more than 800 degree) baking time is the longest, and being easily caused nano-grade size silicon fin has bigger loss,
Have a strong impact on the performance of device；Fluohydric acid. aftertreatment technology refers to before entering epitaxial reaction chamber room,
Wafer is positioned over erosion removal autoxidation in the HF dilute solution etching tank of certain proportioning or cavity
The technique of layer.
After using Fluohydric acid. aftertreatment technology to remove the oxide layer of crystal column surface, in addition it is also necessary to by crystalline substance
Circle is transplanted in extension consersion unit and carries out epitaxial process, and in moving process, wafer can touch air
In oxygen or aqueous vapor again surface formed one layer of natural oxidizing layer, have influence on the reliability of device.
Summary of the invention
The technical problem to be solved in the present invention is that providing one can be prevented effectively from crystal column surface forms nature
The FinFet device source and drain epitaxial device of oxide layer and method.
For solving above-mentioned technical problem, the FinFet device source and drain epitaxial device that the present invention provides includes:
Main chamber；
At least one is for loading the load room of wafer；
For the transfer chamber of wafer circulation, in described transfer chamber, it is provided with the mechanical hand for shifting wafer
Arm；
At least one, for removing the corrosion chamber of crystal column surface natural oxidizing layer, is arranged in described corrosion chamber
There is the graphite base for placing wafer；
At least one is for the epitaxial reaction chamber of extension reaction；
For to main chamber room, described load room, described transfer chamber, described corrosion chamber and described outside
Prolong the gas distributing device supplying gas in reaction chamber；
For the vacuum extractor to equipment evacuation；
Described load room, described transfer chamber, described corrosion chamber and described epitaxial reaction chamber are respectively positioned on described
In main chamber.
Preferably, described load room has two, and described epitaxial reaction chamber has two.
Preferably, described corrosion chamber is Teflon logical sequence material.
Preferably, described gas distributing device includes the first gas distribution dress for providing noble gas
Put and for providing the second gas distributing device of Fluohydric acid. reaction gas.
It is highly preferred that described noble gas is N2, described Fluohydric acid. reaction gas includes that volume fraction does not surpasses
Crossing anhydrous hydrofluoric acid gas, diluent gas and the catalysis gas of 30%, wherein, described diluent gas is
N2Or H2, described catalysis gas is alcohols gas.
Preferably, described vacuum means is set to dry pump.
Present invention also offers a kind of FinFet device according to above-mentioned FinFet device source and drain epitaxial device
Part source and drain epitaxy method, it comprises the steps:
(1) after wafer being loaded described load room, to main chamber room, described load room, described in
Turn chamber, described corrosion chamber and described epitaxial reaction chamber and carry out vacuum pumping；
(2) by described mechanical arm, described wafer is transferred in described transfer chamber；
(3) by described mechanical arm, it is transferred to described wafer described corrosion chamber carries out Fluohydric acid.
Process；
(4) by described mechanical arm, described wafer is transferred in described transfer chamber；
(5) by described mechanical arm, outside being transferred to described epitaxial reaction chamber is carried out by described wafer
Prolong reaction.
Preferably, described vacuum pumping particularly as follows:
It is filled with N2, bled until pressure is less than or equal to 100mtorrr by described vacuum extractor,
Keep more than 60s, be then re-filled with N2To normal pressure, circulate at least 3 times, so that in each chamber
Water and oxygen content are less than 1ppb.
Preferably, the flow of the anhydrous HF gas of described hydrofluoric acid treatment is 10-100sccm, processes
Time is 10-200s, and treatment temperature is 23-70 DEG C, and process pressure is 5-150Torr, to autoxidation
The etching extent of layer controls as more than 50 angstroms.
Preferably, in the front step also including wafer carries out RCA cleaning of step (1).
The FinFet device source and drain epitaxial device that the present invention provides will be by corroding chamber and epitaxial reaction chamber collection
Become to together, crystal column surface natural oxidizing layer before extension reaction can be carried out under conditions of exclusion of water oxygen
Removal, improve epitaxy technique controllability, and can more preferable the contacting of exclusion of water oxygen and crystal column surface,
Avoid crystal column surface and again generate natural oxidizing layer, improve selectivity and the device of epitaxy technique
Reliability.
Accompanying drawing explanation
Fig. 1 is the structural representation of FinFet device source and drain epitaxial device embodiment of the present invention.
Figure indicates as follows:
Main chamber-1, load room-2, transfer chamber-3, corrode chamber-4, epitaxial reaction chamber-5.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of invention, feature and advantage to become apparent from, the tool to the present invention below
Body embodiment is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention
Other can also be used to be different from alternate manner described here implement, those skilled in the art can be not
Doing similar popularization in the case of running counter to intension of the present invention, therefore the present invention is not by following public specific embodiment
Restriction.
As it is shown in figure 1, the FinFet device source and drain epitaxial device that the present invention provides, including:
Main chamber 1；
At least one, for loading the load room 2 of wafer, it will be apparent to those skilled in the art that load
Room 2 is provided with loading horse, loads and be mounted with the wafer for pre-epitaxial film, generally on horse
For, the quantity of wafer can be 1-25 sheet；
For the transfer chamber 3 of wafer circulation, in described transfer chamber 3, it is provided with the machine for shifting wafer
Tool arm (not shown), transfer chamber 3 alternatively referred to as buffer chamber, turn for other each chamber
The transfer transitional cavity of the wafer of removal, preferably to carry out Fluohydric acid. corrosion treatmentCorrosion Science and extension reaction；
At least one is for removing the corrosion chamber 4 of crystal column surface natural oxidizing layer, in described corrosion chamber 4
It is provided with the graphite base (not shown) for placing wafer；
At least one is for the epitaxial reaction chamber 5 of extension reaction, and the concrete structure of epitaxial reaction chamber 5 can
Designing with reference to existing extension consersion unit according to the actual requirements, this is not made further by the present invention
Limit；
For to main chamber room 1, described load room 2, described transfer chamber 3, described corrosion chamber 4 and
Described epitaxial reaction chamber 5 is supplied the gas distributing device (not shown) of gas, this area skill
Art personnel can be readily apparent that, gas distributing device can provide multiple different gas, such as, N2、H2
With anhydrous HF gas etc.；
For to the vacuum extractor (not shown) of equipment evacuation；
Described load room 2, described transfer chamber 3, described corrosion chamber 4 and the equal position of described epitaxial reaction chamber 5
In main chamber room 1, thus each chamber is all integrated in FinFet device source and drain epitaxial device.
The FinFet device source and drain epitaxial device that the present invention provides will be by corroding chamber 4 and epitaxial reaction chamber
5 are integrated together, and can carry out crystal column surface nature oxygen before extension reaction under conditions of exclusion of water oxygen
Change the removal of layer, improve epitaxy technique controllability, and can more preferable the connecing of exclusion of water oxygen and crystal column surface
Touch, it is to avoid crystal column surface generates natural oxidizing layer again, improve epitaxy technique selectivity and
The reliability of device.
In order to improve the work efficiency of FinFet device source and drain epitaxial device, described load room 2 has two
Individual, described epitaxial reaction chamber 5 has two, and certainly, those skilled in the art can be according to the actual requirements
Select load room 2, corrosion chamber 4 and the quantity of epitaxial reaction chamber 5.
In order to ensure to corrode the normal use in chamber 4, described corrosion chamber 4 may preferably be Teflon logical sequence material.
In order to ensure the regular supply of gas, described gas distributing device includes for providing noble gas
The first gas distributing device and for providing the second gas distributing device of Fluohydric acid. reaction gas, so,
Gas distributing device can meet evacuation needs simultaneously, and hydrofluoric acid treatment needs.
In a preferred embodiment of the invention, described noble gas is N2, described Fluohydric acid. reacts
Gas bag includes volume fraction anhydrous hydrofluoric acid gas, diluent gas and catalysis gas less than 30%, its
In, described diluent gas is N2Or H2, described catalysis gas is alcohols gas, such as, methanol or
Ethanol etc..
In order to ensure the effect of evacuation, described vacuum means is set to dry pump.Specifically implement at one
In example, it is possible to gas distributing device and vacuum extractor are all integrated in main chamber 1.
The present invention additionally provides a kind of FinFet according to FinFet device source and drain epitaxial device further
Device source and drain epitaxy method, it comprises the steps:
(1) after wafer being loaded described load room 2, to main chamber room 1, described load room 2,
Described transfer chamber 3, described corrosion chamber 4 and described epitaxial reaction chamber 5 carry out vacuum pumping, to protect
Demonstrate,prove water oxygen residual quantity relatively low in each chamber；
(2) by described mechanical arm, described wafer is transferred in described transfer chamber 3；
(3) by described mechanical arm, it is transferred to described wafer described corrosion chamber 4 carries out hydrogen fluorine
Acid treatment, the technological parameter of above-mentioned hydrofluoric acid treatment can select the most flexibly；
(4) by described mechanical arm, described wafer is transferred in described transfer chamber 3；
(5) by described mechanical arm, it is transferred to described wafer described epitaxial reaction chamber 5 is carried out
Extension is reacted, and the technological parameter of above-mentioned extension reaction can select the most flexibly.Certainly, originally
Skilled person is it should be clear that after extension reacted, then is transferred to by wafer by mechanical arm
In transfer chamber 3, and by mechanical arm, wafer is transferred in load room 2 so that operator take out
Wafer.
The present invention provide FinFet device source and drain epitaxy method by wafer is circulated in each chamber,
Under conditions of exclusion of water oxygen, the natural oxidizing layer of crystal column surface can be removed, and can be quickly carried out
Extension is reacted, it is to avoid wafer and extraneous contact, it is ensured that the natural oxidizing layer of crystal column surface will not be again
Secondary formation.
In order to ensure the effect of evacuation, described vacuum pumping particularly as follows:
It is filled with N2, bled until pressure is less than or equal to 100mtorrr by described vacuum extractor,
Keep more than 60s, be then re-filled with N2To normal pressure, circulate at least 3 times, so that in each chamber
Water and oxygen content are less than 1ppb.
In order to ensure the removal effect of crystal column surface natural oxidizing layer, the anhydrous HF of described hydrofluoric acid treatment
The flow of gas is 10-100sccm, and the process time is 10-200s, and treatment temperature is 23-70 DEG C, place
Reason pressure is 5-150Torr, controls the etching extent of natural oxidizing layer for more than 50 angstroms.In order to relatively
Effectively removes the natural oxidizing layer of fin source and drain areas silicon face in the short time, decrease other district
The loss of the media such as territory silicon oxide, the reaction gas of hydrofluoric acid treatment can be also mixed gas, such as, hydrogen
Fluoric acid reaction gas includes that volume fraction is less than anhydrous hydrofluoric acid gas, diluent gas and the catalysis of 30%
Gas, wherein, diluent gas is N2Or H2, catalysis gas be alcohols gas, such as, methanol or
Ethanol etc..By the control to gas ratio each in Fluohydric acid. reaction gas, and the work such as temperature, pressure
The speed of the control of skill condition, beneficially control corrosion rate and the time of corrosion and the row of byproduct of reaction
Remove, additionally, N2Or H2Diluent gas can preferably oxygen and wafer be completely cut off, it is to avoid oxygen again
Change.
In a preferred embodiment, the flow set of anhydrous HF gas is 25sccm, carrier gas
Flow set is 150sccm, and the temperature constant of reaction chamber is 50 DEG C, and the pressure of reaction chamber is 50Torr,
Under these process conditions, to the corrosion rate of native oxide layer about 15-25 angstrom min, corrosion
Time be set as 60s.
In order to remove staining of crystal column surface, in step (1), front also to include that wafer is carried out RCA clear
The step washed, specifically, first carries out SPM (H2SO4/H2O2/H2O) clean, to remove crystal column surface
Staining of carbon containing, such as organic residue etc., then, carries out SC2 (HCl/H2O2/H2O) cleaning, to go
Except the metallic of wafer surface trace, and it is dry to carry out drying.
Although the present invention combines above example and is described, but the present invention is not limited to above-mentioned reality
Executing example, and be only defined by the appended claims, it can easily be carried out by those of ordinary skill in the art
Modifications and variations, but and without departing from the essential idea of the present invention and scope.
Claims (10)
1. a FinFet device source and drain epitaxial device, it is characterised in that including:
Main chamber；
At least one is for loading the load room of wafer；
For the transfer chamber of wafer circulation, in described transfer chamber, it is provided with the mechanical hand for shifting wafer
Arm；
At least one, for removing the corrosion chamber of crystal column surface natural oxidizing layer, is arranged in described corrosion chamber
There is the graphite base for placing wafer；
At least one is for the epitaxial reaction chamber of extension reaction；
For to main chamber room, described load room, described transfer chamber, described corrosion chamber and described outside
Prolong the gas distributing device supplying gas in reaction chamber；
For the vacuum extractor to equipment evacuation；
Described load room, described transfer chamber, described corrosion chamber and described epitaxial reaction chamber are respectively positioned on described
In main chamber.
FinFet device source and drain epitaxial device the most according to claim 1, it is characterised in that institute
Stating load room and have two, described epitaxial reaction chamber has two.
FinFet device source and drain epitaxial device the most according to claim 1, it is characterised in that institute
Stating corrosion chamber is Teflon logical sequence material.
FinFet device source and drain epitaxial device the most according to claim 1, it is characterised in that institute
State gas distributing device to include for providing the first gas distributing device of noble gas and for providing hydrogen
Second gas distributing device of fluoric acid reaction gas.
FinFet device source and drain epitaxial device the most according to claim 4, it is characterised in that institute
Stating noble gas is N2, described Fluohydric acid. reaction gas includes that volume fraction is less than the anhydrous hydrogen fluorine of 30%
Acid gas, diluent gas and catalysis gas, wherein, described diluent gas is N2Or H2Urge described in,
Activating QI body is alcohols gas.
FinFet device source and drain epitaxial device the most according to claim 1, it is characterised in that institute
State vacuum means and be set to dry pump.
7. one kind according to the FinFet device source and drain epitaxial device described in any one of claim 1 to 6
FinFet device source and drain epitaxy method, it is characterised in that comprise the steps:
(1) after wafer being loaded described load room, to main chamber room, described load room, described in
Turn chamber, described corrosion chamber and described epitaxial reaction chamber and carry out vacuum pumping；
(2) by described mechanical arm, described wafer is transferred in described transfer chamber；
(3) by described mechanical arm, it is transferred to described wafer described corrosion chamber carries out Fluohydric acid.
Process；
(4) by described mechanical arm, described wafer is transferred in described transfer chamber；
(5) by described mechanical arm, outside being transferred to described epitaxial reaction chamber is carried out by described wafer
Prolong reaction.
FinFet device source and drain epitaxy method the most according to claim 7, it is characterised in that institute
State vacuum pumping particularly as follows:
It is filled with N2, bled until pressure is less than or equal to 100 mtorrr by described vacuum extractor,
Keep more than 60s, be then re-filled with N2To normal pressure, circulate at least 3 times, so that in each chamber
Water and oxygen content are less than 1ppb.
FinFet device source and drain epitaxy method the most according to claim 7, it is characterised in that institute
The flow of the anhydrous HF gas stating hydrofluoric acid treatment is 10-100 sccm, and the process time is 10-200s,
Treatment temperature is 23-70 DEG C, and process pressure is 5-150Torr, controls the etching extent of natural oxidizing layer
For more than 50 angstroms.
FinFet device source and drain epitaxy method the most according to claim 7, it is characterised in that
In the front step also including wafer carries out RCA cleaning of step (1).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510028853.0A CN105870036A (en) | 2015-01-20 | 2015-01-20 | FinFet device source and drain epitaxial equipment and method |
| US15/001,087 US20160211351A1 (en) | 2015-01-20 | 2016-01-19 | Apparatus and method for epitaxially growing sources and drains of a finfet device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510028853.0A CN105870036A (en) | 2015-01-20 | 2015-01-20 | FinFet device source and drain epitaxial equipment and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105870036A true CN105870036A (en) | 2016-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510028853.0A Pending CN105870036A (en) | 2015-01-20 | 2015-01-20 | FinFet device source and drain epitaxial equipment and method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08335574A (en) * | 1995-06-07 | 1996-12-17 | Toshiba Corp | Manufacture of semiconductor device and its production equipment |
| US5766360A (en) * | 1992-03-27 | 1998-06-16 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
| JP2002100574A (en) * | 2000-09-25 | 2002-04-05 | Hitachi Kokusai Electric Inc | System for processing substrate |
| JP5084525B2 (en) * | 2008-01-22 | 2012-11-28 | 株式会社アルバック | Substrate processing apparatus and substrate processing method |
| CN103718273A (en) * | 2011-08-02 | 2014-04-09 | 株式会社Eugene科技 | Equipment for manufacturing semiconductor for epitaxial process |
| CN204391059U (en) * | 2015-01-20 | 2015-06-10 | 中国科学院微电子研究所 | A kind of FinFet device source and drain epitaxial device |
-
2015
- 2015-01-20 CN CN201510028853.0A patent/CN105870036A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5766360A (en) * | 1992-03-27 | 1998-06-16 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
| JPH08335574A (en) * | 1995-06-07 | 1996-12-17 | Toshiba Corp | Manufacture of semiconductor device and its production equipment |
| JP2002100574A (en) * | 2000-09-25 | 2002-04-05 | Hitachi Kokusai Electric Inc | System for processing substrate |
| JP5084525B2 (en) * | 2008-01-22 | 2012-11-28 | 株式会社アルバック | Substrate processing apparatus and substrate processing method |
| CN103718273A (en) * | 2011-08-02 | 2014-04-09 | 株式会社Eugene科技 | Equipment for manufacturing semiconductor for epitaxial process |
| CN204391059U (en) * | 2015-01-20 | 2015-06-10 | 中国科学院微电子研究所 | A kind of FinFet device source and drain epitaxial device |
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