CN105869721A - Transparent conducting thin film modified by flexible substrate interface and preparation method thereof - Google Patents

Transparent conducting thin film modified by flexible substrate interface and preparation method thereof Download PDF

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Publication number
CN105869721A
CN105869721A CN201610383592.9A CN201610383592A CN105869721A CN 105869721 A CN105869721 A CN 105869721A CN 201610383592 A CN201610383592 A CN 201610383592A CN 105869721 A CN105869721 A CN 105869721A
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China
Prior art keywords
flexible substrates
conductive film
transparent conductive
thin film
transparent
Prior art date
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Pending
Application number
CN201610383592.9A
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Chinese (zh)
Inventor
王鲁南
朱丽萍
叶志镇
李锺允
朴勝
朴勝一
全武贤
朴翰镇
王建华
窦立峰
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NANJING HUIJIN JINYUAN OPTOELECTRONIC MATERIALS CO Ltd
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NANJING HUIJIN JINYUAN OPTOELECTRONIC MATERIALS CO Ltd
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Priority to CN201610383592.9A priority Critical patent/CN105869721A/en
Publication of CN105869721A publication Critical patent/CN105869721A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides a transparent conducting thin film modified by a flexible substrate interface, wherein the transparent conducting thin film prevents moisture and gas in a flexible and transparent substrate from being escaped, and the use performance and the service life of the transparent conducting thin film are guaranteed; the uneven surface on one side of the flexible substrate is provided with an SiO2 thin film layer, and the SiO2 thin film layer is provided with a transparent conducting layer. Due to the fact that the SiO2 thin film layer is tightly combined with the flexible substrate, external leakage of moisture and gas is blocked, escape of moisture and gas contained in the transparent substrate is delayed or prevented, corrosion of moisture and gas to the surface transparent conducting layer is effectively lowered, and the service life and the use performance of the transparent conducting thin film are guaranteed; meanwhile, due to the fact that the dense SiO2 thin film layer is tightly combined with the flexible substrate, the attachment performance of a deposition thin film is improved.

Description

Transparent conductive film of flexible substrates interface modification and preparation method thereof
Technical field
The present invention relates to a kind of flexible transparent conductive film and preparation method thereof.
Background technology
Flexible transparent conductive film, due to its characteristic such as distinctive flexibility, frivolous, high-transmission rate, is widely used in Flexible Displays, thin-film solar cells, the intelligence field such as fenestrated membrane, touch screen.
Flexible transparent conductive film generally comprises flexible and transparent substrate and is attached to the suprabasil transparency conducting layer of flexible and transparent by magnetron sputtering.Owing to being inevitably present a number of moisture, gas in flexible and transparent substrate.Transparency conducting layer magnetron sputtering deposition coating process in, the intrabasement moisture of flexible and transparent, gas constantly evaporate due to the effect of fine vacuum, thus the deposition process of transparency conducting layer, deposition quality are produced impact.It addition, during flexible transparent conductive film uses, As time goes on, the moisture, the gas that still remain in flexible and transparent substrate also will gradually escape, and surface transparent conductive layer is played corrosiveness, and the lighter makes conductive layer performance change.Severe one, affects the adhesive force of conductive layer.
Summary of the invention
It is an object of the invention to provide one prevents the intrabasement moisture of flexible and transparent, gas from escaping, it is ensured that the transparent conductive film of the flexible substrates interface modification in transparent conductive film serviceability and service life.
The transparent conductive film of the flexible substrates interface modification of the present invention, is to have SiO on the rough surface of flexible substrates side2Thin layer, at SiO2There is on thin layer transparency conducting layer.
The beneficial effect of this transparent conductive film: this SiO2Thin layer is combined closely with flexible substrates, moisture and gas are leaked and serves the effect of obstruct, slow down or prevent moisture content and the effusion of gas in flexible and transparent substrate, effectively reduce moisture and the gas corrosiveness to surface transparent conductive layer, it is ensured that the service life of transparent conductive film and serviceability.SiO due to this densification2Thin layer is combined closely with flexible substrates, improves the adhesion property of deposition thin film.
The transparent conductive film of above-mentioned flexible substrates interface modification, the recess on the uneven surface of flexible substrates is 0.8-1.2nm the most deeply.
The transparent conductive film of above-mentioned flexible substrates interface modification, flexible substrates is pet layer, and transparency conducting layer is AZO layer.
Invention also provides the preparation method of the transparent conductive film of a kind of flexible substrates interface modification, transparent conductive film prepared by the method, the quality of transparency conducting layer deposition is higher, forms film thickness concordance preferable, ensure that transparent conductive film serviceability and service life simultaneously.
The preparation method of the transparent conductive film of flexible substrates interface modification of the present invention, is that the side surface to flexible substrates carries out glow discharge process so that flexible substrates one side surface forms roughness；By reaction magnetocontrol sputtering, Si material is formed SiO at rough flexible substrates one side surface2Thin layer；Material is led by magnetron sputtering at SiO by transparent2On thin layer.
The beneficial effect of this preparation method: owing to when sputtering conductive layer, flexible substrates being attached to SiO2Thin layer, fine and close SiO2 thin layer serves the effect of obstruct, reduces or prevents leaking of moisture content and gas in flexible and transparent substrate, it is possible to improve the quality of transparency conducting layer deposition, formation film thickness concordance is preferable.
The preparation method of the transparent conductive film of above-mentioned flexible substrates interface modification, when flexible substrates surface is carried out glow discharge process, oxygen flow 50sccm, argon flow amount 350sccm, power 2KW/cm2, vacuum reaches 4 * 10-3Torr, processes second time 10-20.Using glow discharge to process flexible substrates surface, method is the most controlled so that flexible substrates surface forms the continuous groove that 0.8-1.2nm is deep.
The preparation method of the transparent conductive film of above-mentioned flexible substrates interface modification, when Si is carried out magnetron sputtering, argon flow amount 500sccm, magnetron sputtering power 12.0KW/cm2, the oxygen flow of introducing is 12sccm, the sputtering time 10-20 second.
The preparation method of the transparent conductive film of above-mentioned flexible substrates interface modification, to transparent lead material magnetron sputtering time, oxygen flow 2sccm, argon flow amount 450sccm, magnetron sputtering power 5.0KW/cm2。
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the transparent conductive film of flexible substrates interface modification.
Detailed description of the invention
The transparent conductive film of flexible substrates interface modification shown in Figure 1, has SiO on the rough surface of PET flexible substrates 1 side2Thin layer 2, at SiO2There is on thin layer electrically conducting transparent AZO layer 3.The recess on the uneven surface of flexible substrates is about 1nm the most deeply.
The preparation method of the transparent conductive film of this flexible substrates interface modification is to process PET flexible and transparent substrate material surface ionization aura, forms countless Microscopic grooves；Si material is sputtered at by room temperature magnetic control groove and the substrate surface formation transparent SiO of a thin layer of flexible and transparent substrate material surface again2, successively transparent material (TCO) room temperature magnetic control of leading is sputtered at the transparent SiO of above-mentioned formation2In aspect.
Concrete processing method is as follows:
To PET flexible and transparent substrate material surface glow discharge from process, oxygen flow 50sccm, argon flow amount 350sccm, power 2KW/cm2, vacuum reaches 4 * 10-3Torr, processes second time 10-20；The countless Microscopic grooves of deep about 1nm is formed on flexible substrates surface.
In independent magnetron sputtering cabin, with Si target as negative electrode, flexible and transparent substrate is anode, argon flow amount 500sccm, magnetron sputtering power 12.0KW/cm2, bombard Si target, the basad motion of Si sputtered by Ar+；Being simultaneously introduced oxygen flow is 12sccm, makes the Si atom of high-speed motion combine with oxygen collision, forms the SiO of of short duration high temperature2In molecules strike flexible and transparent substrate material surface groove after treatment, the sputtering time 10-20 second, and gradually form one layer of fine and close SiO2Thin film.
In independent magnetron sputtering cabin, with AZO target as negative electrode, flexible and transparent substrate is anode, oxygen flow 2sccm, argon flow amount 450sccm, magnetron sputtering power 5.0KW/cm2, bombard AZO target, and basad motion by Ar+, at SiO2The transparent conductive film layer of formation of deposits one 20-30nm on thin layer.
Advantages of the present invention:
1, the SiO of this densification2Thin layer is combined closely with flexible substrates, and leaking moisture content in flexible and transparent substrate and gas serves the effect of obstruct.
2, due to fine and close SiO2The effect that thin layer intercepts, reduces or stops leaking of moisture content and gas in flexible and transparent substrate, improve the quality that transparency conducting layer deposits, and formation film thickness concordance is preferable.
3, due to the SiO of this densification2Thin layer is combined closely with flexible substrates, improves the adhesion property of deposition thin film.
4, the present invention changes flexible and transparent substrate surface pattern, material composition, improves surface transparent conductive layer quality, extends service life.

Claims (7)

1. the transparent conductive film of flexible substrates interface modification, is characterized in that: have SiO on the rough surface of flexible substrates side2Thin layer, at SiO2There is on thin layer transparency conducting layer.
2. the transparent conductive film of flexible substrates interface modification as claimed in claim 1, is characterized in that: the recess on the uneven surface of flexible substrates is the most deeply for 0.8-1.2nm.
3. the transparent conductive film of flexible substrates interface modification as claimed in claim 1, is characterized in that: flexible substrates is pet layer, and transparency conducting layer is AZO layer.
4. the preparation method of the transparent conductive film of the flexible substrates interface modification described in claim 1, is characterized in that: a side surface of flexible substrates is carried out glow discharge process so that flexible substrates one side surface forms roughness；By reaction magnetocontrol sputtering, Si material is formed SiO at rough flexible substrates one side surface2Thin layer；Material is led by magnetron sputtering at SiO by transparent2On thin layer.
5. the preparation method of the transparent conductive film of flexible substrates interface modification as claimed in claim 4, is characterized in that: when flexible substrates surface carries out glow discharge process, oxygen flow 50sccm, argon flow amount 350sccm, power 2KW/cm2, vacuum reaches 4 * 10-3Torr, processes second time 10-20.
6. the preparation method of the transparent conductive film of flexible substrates interface modification as claimed in claim 4, is characterized in that: when Si is carried out magnetron sputtering, argon flow amount 500sccm, magnetron sputtering power 12.0KW/cm2, the oxygen flow of introducing is 12sccm, the sputtering time 10-20 second.
7. the preparation method of the transparent conductive film of flexible substrates interface modification as claimed in claim 4, is characterized in that: to transparent lead material magnetron sputtering time, oxygen flow 2sccm, argon flow amount 450sccm, magnetron sputtering power 5.0KW/cm2。
CN201610383592.9A 2016-06-02 2016-06-02 Transparent conducting thin film modified by flexible substrate interface and preparation method thereof Pending CN105869721A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108400180A (en) * 2018-01-25 2018-08-14 北京工业大学 Texture substrate enhances the electrical stability of flexible device under mechanical stress

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221935A (en) * 2007-01-10 2008-07-16 日东电工株式会社 Transparent conductive film and method for producing the same
CN101417517A (en) * 2007-10-22 2009-04-29 日东电工株式会社 Transparent conductive film, method for production thereof and touch panel therewith
CN102194539A (en) * 2010-03-11 2011-09-21 联享光电股份有限公司 Transparent electric-conducting laminate body and manufacturing method thereof
CN102265354A (en) * 2008-12-26 2011-11-30 帝人株式会社 Transparent conductive laminate and transparent touch panel comprising same
CN103162452A (en) * 2013-03-05 2013-06-19 日出东方太阳能股份有限公司 Inoxidizability solar spectrum selective absorbing coating and preparation method thereof
CN103280256A (en) * 2013-06-26 2013-09-04 汕头万顺包装材料股份有限公司光电薄膜分公司 Transparent conductive film
CN104157548A (en) * 2013-05-14 2014-11-19 北儒精密股份有限公司 Method for manufacturing flexible light-transmitting substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221935A (en) * 2007-01-10 2008-07-16 日东电工株式会社 Transparent conductive film and method for producing the same
CN101417517A (en) * 2007-10-22 2009-04-29 日东电工株式会社 Transparent conductive film, method for production thereof and touch panel therewith
CN102265354A (en) * 2008-12-26 2011-11-30 帝人株式会社 Transparent conductive laminate and transparent touch panel comprising same
CN102194539A (en) * 2010-03-11 2011-09-21 联享光电股份有限公司 Transparent electric-conducting laminate body and manufacturing method thereof
CN103162452A (en) * 2013-03-05 2013-06-19 日出东方太阳能股份有限公司 Inoxidizability solar spectrum selective absorbing coating and preparation method thereof
CN104157548A (en) * 2013-05-14 2014-11-19 北儒精密股份有限公司 Method for manufacturing flexible light-transmitting substrate
CN103280256A (en) * 2013-06-26 2013-09-04 汕头万顺包装材料股份有限公司光电薄膜分公司 Transparent conductive film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108400180A (en) * 2018-01-25 2018-08-14 北京工业大学 Texture substrate enhances the electrical stability of flexible device under mechanical stress

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Application publication date: 20160817

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