CN105867689B - 一种触控显示基板的制作方法及触控显示装置的阵列基板 - Google Patents
一种触控显示基板的制作方法及触控显示装置的阵列基板 Download PDFInfo
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Abstract
本发明公开了一种触控显示基板的制作方法及触控显示装置的阵列基板,利用半色调掩膜板配合薄膜工艺,使得触摸信号金属引线上保证一定绝缘层厚度同时,其余位置绝缘层薄化处理,一方面平衡了过孔刻蚀的情况,减少了过刻风险,从而避免触摸信号金属引线的损伤,另一方面增大了存储电容,保证了良好的显示效果。
Description
技术领域
本发明涉及触控显示技术领域,尤指一种触控显示基板的制作方法及一种触控显示装置的阵列基板。
背景技术
随着显示技术的飞速发展,触摸屏(Touch Screen Panel)已经逐渐遍及人们的生活中。目前,触摸屏按照组成结构可以分为:外挂式触摸屏(Add on Mode Touch Panel)、覆盖表面式触摸屏(On Cell Touch Panel)、以及内嵌式触摸屏(In Cell Touch Panel)。其中内嵌式触摸屏将触摸屏的触控电极内嵌在液晶显示屏内部,可以减薄模组整体的厚度,又可以大大降低触摸屏的制作成本,受到各大面板厂家青睐。In-Cell触控方案通常包括自容方式和互容方式。
其中,对于高级超维场转换模式的液晶显示面板,自容方式具体为:将液晶显示面板上用作公共电极的金属层分割成若干方块(即电极块)作为触控传感器单元,触控传感器通过特定的触摸信号引线与驱动IC连接,当手指触碰液晶显示面板时即会引起相应位置处触控传感器电容值或者分割的公共电极的电压值的波动,驱动IC通过测试电容值的波动能够确定触碰点的位置,从而实现触控功能。
目前自容方式触控产品中触摸信号引线的设计方案有很多,如图1所示,将公共电极02分割成块后,第三绝缘层03,再通过构图工艺形成触摸信号引线04,之后再沉积一层绝缘层12,最后通过打孔利用转接线14侨联触摸信号引线04和公共电极02,使得触摸信号引线04发挥电极块引线作用。通常情况下,过孔a相比于过孔b深度更深,需要的刻蚀时间更长,因此若要一次性完成两个过孔的刻蚀,则触摸信号引线04上的较浅过孔b很容易发生过刻,导致触摸信号金属引线层的损伤。
为了达到更好的刻蚀效果,需要在像素电极和公共电极之间形成较薄绝缘层,同时触摸信号金属引线上保留一定厚度的绝缘层,这样一方面可以保证绝缘层较好覆盖触摸信号金属引线,减少过刻风险,另一方面增大了存储电容,保证了良好的显示效果。然而若采用干法刻蚀位于触摸信号金属引线区域以外的大面积的绝缘层以减少其厚度,工艺实现难度较大,很难刻蚀干净且均一性差,所以无法经过正常沉积、曝光、干刻形成小尺寸的绝缘层残留。
发明内容
为了克服现有技术的缺陷,本发明实施例提供了一种触控显示基板的制作方法及一种触控显示装置的阵列基板,使得触摸信号金属引线上保证一定绝缘层厚度同时,其余位置绝缘层薄化处理,有效增大了存储电容,并平衡了过孔刻蚀的情况。
为实现上述目的,本发明提供一种制作触控显示基板的方法,包括下列步骤:
S1:通过构图工艺在衬底基板的上方形成触摸信号引线;
S2:沉积光刻胶层,并通过构图工艺形成第一厚度光刻胶层、第二厚度光刻胶层及光刻胶层开口区域,所述光刻胶开口区域位于触摸信号引线上方;
S3:在所述光刻胶层上方沉积第一绝缘层,所述第一绝缘层包括第一区域与第二区域,其中第一区域位于所述第一厚度光刻胶层上方,第二区域位于第二厚度光刻胶层及光刻胶层开口区域上方,所述第一绝缘层的第一区域与第二区域断开;
S4:通过离地剥离工艺去除光刻胶层以及位于光刻胶层之上的第一绝缘层;
S5:沉积第二绝缘层。
在一些示例中,所述第一厚度光刻胶层厚度大于第二厚度光刻胶层。
在一些示例中,所述步骤S2具体包括:
沉积光刻胶层,所述光刻胶为正性光刻胶;
采用由遮光区、完全透光区和部分透光区组成的掩膜板进行曝光显影,其中所述掩膜板遮光区对应第一厚度光刻胶层,部分透光区对应第二厚度光刻胶层,全部透光区对应光刻胶层开口区域;
经刻蚀后形成第一厚度光刻胶层、第二厚度光刻胶层及光刻胶层开口区域。
在一些示例中,所述掩膜板为半色调掩膜板。
在一些示例中,所述第一绝缘层的厚度大于第二绝缘层,且所述第二绝缘层与触摸信号引线厚度相等。
在一些示例中,所述触摸信号引线为金属材质,所述第一绝缘层与第二绝缘层材料均为氮化硅。
在一些示例中,所述步骤S1之前还包括如下步骤:
提供一衬底基板;
在所述衬底基板上形成薄膜晶体管元件层,所述薄膜晶体管元件层包括栅极金属层和源漏极金属层,所述栅极金属层包括栅电极和多条栅极线,所述源漏极金属层包括源极、漏极和多条源极线;
在所述薄膜晶体管元件层上形成公共电极层,图案化所述公共电极层,形成多个相互独立的公共电极
在所述公共电极和所述薄膜晶体管元件层上形成第三绝缘层,所述第三绝缘层上表面平坦。
在一些示例中,所述步骤S5之后还包括如下步骤:
在所述公共电极上刻蚀第一过孔,所述第一过孔贯穿第二绝缘层和第三绝缘层,且暴露至少部分所述公共电极,在所述触摸信号引线上刻蚀第二过孔,所述第二过孔贯穿第一绝缘层和第二绝缘层,且暴露至少部分所述触摸信号引线;
在所述第二绝缘层上形成像素电极,所述像素电极与所述公共电极在正投影方向上至少部分重叠;
通过构图工艺形成转接线,所述转接线通过第一过孔与公共电极电连接,通过第二过孔与触摸信号引线实现电连接。
本发明实施例还提供了一种触控显示装置的阵列基板,所述阵列基板采用前述方法制成。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1为先前工艺制作的触控显示装置的阵列基板的截面图;
图2a-2g为本发明实施例提供的触控显示基板的制作方法的各步骤完成后相应的阵列基板形貌的截面图;
图3为本发明实施例提供的触控显示装置的阵列基板的截面图。
具体实施方式
下面结合附图,对本发明实施例提供的触控显示装置的阵列基板及其制作方法的具体实施方式进行详细地说明。附图中各层薄膜厚度和形状不反映真实比例,目的只是示意说明本发明内容。
首先,提供一衬底基板,在所述衬底基板上形成薄膜晶体管元件层,包括栅极金属层和源漏极金属层,所述栅极金属层包括栅电极和多条栅极线,所述源漏极金属层包括源极、漏极和多条源极线,在附图中仅用基板01来将前述各薄膜晶体管元件层概括表示。
在所述薄膜晶体管元件层上形成公共电极层,图案化所述公共电极层,形成多个相互独立的公共电极02。在所述公共电极和所述薄膜晶体管元件层上形成第三绝缘层03,所述第三绝缘层03上表面平坦,完成后的形貌如图2a所示。
然后,使用磁控溅射方法,在衬底基板上制备一层触摸信号引线金属层。该触摸信号引线金属层的材料通常采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属,也可以使用上述几种材料的组合。并通过曝光显影等构图工艺在一定区域上形成触摸信号引线04。完成后的形貌如图2b所示。
然后,如图2c所示,沉积正性光刻胶层05。
采用半色调掩膜板对光刻胶进行曝光显影,如图2d所示,该半色调掩膜板由掩膜基板06、遮光区07、完全透光区08和部分透光区09组成,其中所述遮光区07对应第一厚度光刻胶层051,部分透光区09对应第二厚度光刻胶层052,部分透光区09对应光刻胶层开口区域,所述光刻胶开口区域位于触摸信号引线04上方。
利用化学汽相沉积的方法在所述光刻胶层上方沉积第一绝缘层10,该绝缘层材料通常是氮化硅,也可以使用氧化硅和氮氧化硅等。由于经过上一步工艺后形成的第一厚度光刻胶层051与第二厚度光刻胶层052的高度差大于第一绝缘层10的厚度,所以沉积第一绝缘层10后该绝缘层自然因段差而分为两个区域,其中第一区域位于所述第一厚度光刻胶层051上方,第二区域位于第二厚度光刻胶层052及光刻胶层开口区域上方,所述第一绝缘层10的第一区域与第二区域断开,暴露出部分光刻胶层以方便后续离地剥离工艺中剥离液的进入。完成后的形貌如图2e所示。
接下来通过离地剥离工艺去除光刻胶层,沉积在其上的第一绝缘层10也随之被去除,只保留触摸信号引线04上方的第一绝缘层10,并在侧壁形成垂直形貌,如图2f所示。其中离地剥离采用的剥离液可为丙酮、异丙醇、酒精或者它们的混合液。
继续沉积第二绝缘层11,且保证第二绝缘层11的厚度小于第一绝缘层,所述第二绝缘层11与触摸信号引线04厚度相等,此时触摸信号引线04上方的绝缘层总厚度为第一绝缘层10与第二绝缘层11的厚度之和,其余部分的绝缘层厚度仅为第二绝缘层11的厚度,完成此步骤状态,如图2g所示。
在实际应用中,上述工艺流程之后还应包括如下步骤:
在公共电极02上刻蚀第一过孔a,所述第一过孔a贯穿第二绝缘层11和第三绝缘层03,且暴露至少部分所述公共电极02,在所述触摸信号引线04上刻蚀第二过孔b,所述第二过孔b贯穿第一绝缘层10和第二绝缘层11,且暴露至少部分所述触摸信号引线04;
在所述第二绝缘层11上形成像素电极13,所述像素电极13与所述公共电极02在正投影方向上至少部分重叠;
通过构图工艺形成转接线14,所述转接线14通过第一过孔a与公共电极02电连接,通过第二过孔b与触摸信号引线04实现电连接。
整个阵列基板工艺完成后的结构如图3所示,可见本发明通过创造性的制作方法在像素电极13和公共电极02之间形成了较现有工艺更薄的绝缘层,根据电容的基本公式,电容与介电层的厚度成反比,更薄的绝缘层意味着可以实现更大的存储电容,可以足够维持显示阶段的电压,保证画面的正常显示。于此同时触摸信号引线04上方保留了较厚的绝缘层,很好地覆盖了触摸信号引线04,令过孔a和过孔b深度相近,均衡了刻蚀时间,减少了过刻风险,避免了触摸信号引线04的损伤。
基于同一发明构思,本发明实施例还提供了一种触控显示装置的阵列基板,该阵列基板采用前述实施例所述方法制成。该阵列基板的具体结构可以参见上述制作方法的实施例,重复之处不再赘述。
本发明实施例提供的一种触控显示基板的制作方法及一种触控显示装置的阵列基板,与现有技术相比,使得触摸信号金属引线上小尺寸的绝缘层保证一定厚度的同时,其余位置的绝缘层薄化处理,一方面平衡了过孔刻蚀的情况,减少了过刻风险,从而避免触摸信号金属引线的损伤,另一方面增大了存储电容,保证了良好的显示效果。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (11)
1.一种触控显示基板的制作方法,其特征在于,包括以下步骤:
S1:通过构图工艺在衬底基板的上方形成触摸信号引线;
S2:沉积光刻胶层,并通过构图工艺形成第一厚度光刻胶层、第二厚度光刻胶层及光刻胶层开口区域,所述光刻胶层开口区域位于触摸信号引线上方;
S3:在所述光刻胶层上方沉积第一绝缘层,所述第一绝缘层包括第一区域与第二区域,其中第一区域位于所述第一厚度光刻胶层上方,第二区域位于第二厚度光刻胶层及光刻胶层开口区域上方,所述第一绝缘层的第一区域与第二区域断开;
S4:通过离地剥离工艺去除光刻胶层以及位于光刻胶层之上的第一绝缘层;
S5:沉积第二绝缘层。
2.如权利要求1所述的触控显示基板的制作方法,其特征在于,所述第一厚度光刻胶层厚度大于第二厚度光刻胶层。
3.如权利要求2所述的触控显示基板的制作方法,其特征在于,所述步骤S2具体包括:
沉积光刻胶层,所述光刻胶为正性光刻胶;
采用由遮光区、完全透光区和部分透光区组成的掩膜板进行曝光显影,其中所述掩膜板遮光区对应第一厚度光刻胶层,部分透光区对应第二厚度光刻胶层,全部透光区对应光刻胶层开口区域;
经刻蚀后形成第一厚度光刻胶层、第二厚度光刻胶层及光刻胶层开口区域。
4.如权利要求3所述的触控显示基板的制作方法,其特征在于,所述掩膜板为半色调掩膜板。
5.如权利要求1至4任一所述的触控显示基板的制作方法,其特征在于,所述第一绝缘层的厚度大于第二绝缘层。
6.如权利要求1所述的触控显示基板的制作方法,其特征在于,所述第二绝缘层与触摸信号引线厚度相等。
7.如权利要求1所述的触控显示基板的制作方法,其特征在于所述触摸信号引线为金属材质。
8.如权利要求1所述的触控显示基板的制作方法,其特征在于,所述第一绝缘层与第二绝缘层材料均为氮化硅。
9.如权利要求1所述的触控显示基板的制作方法,其特征在于,所述步骤S1之前还包括如下步骤:
提供一衬底基板;
在所述衬底基板上形成薄膜晶体管元件层,所述薄膜晶体管元件层包括栅极金属层和源漏极金属层,所述栅极金属层包括栅电极和多条栅极线,所述源漏极金属层包括源极、漏极和多条源极线;
在所述薄膜晶体管元件层上形成公共电极层,图案化所述公共电极层,形成多个相互独立的公共电极;
在所述公共电极和所述薄膜晶体管元件层上形成第三绝缘层,所述第三绝缘层上表面平坦。
10.如权利要求9所述的触控显示基板的制作方法,其特征在于,所述步骤S5之后还包括如下步骤:
在所述公共电极上刻蚀第一过孔,所述第一过孔贯穿第二绝缘层和第三绝缘层,且暴露至少部分所述公共电极,在所述触摸信号引线上刻蚀第二过孔,所述第二过孔贯穿第一绝缘层和第二绝缘层,且暴露至少部分所述触摸信号引线;
在所述第二绝缘层上形成像素电极,所述像素电极与所述公共电极在正投影方向上至少部分重叠;
通过构图工艺形成转接线,所述转接线通过第一过孔与公共电极电连接,通过第二过孔与触摸信号引线实现电连接。
11.一种触控显示装置的阵列基板,其特征在于,所述阵列基板采用权利要求1至10任一所述方法制成。
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