CN105867670A - Manufacturing method for graphene thin-film touch panel - Google Patents
Manufacturing method for graphene thin-film touch panel Download PDFInfo
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- CN105867670A CN105867670A CN201510034511.XA CN201510034511A CN105867670A CN 105867670 A CN105867670 A CN 105867670A CN 201510034511 A CN201510034511 A CN 201510034511A CN 105867670 A CN105867670 A CN 105867670A
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- graphene film
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- sense line
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Abstract
A manufacturing method for a graphene thin-film touch panel comprises: by means of a chemical vapor deposition process, enabling a graphene thin-film to grow on a catalyst metal, and then transferring the graphene thin-film onto a substrate; forming patterning photomasks on the graphene thin-film; touching a first region, which is not shielded by the photomasks, of the graphene thin-film by using a strong oxidant so as to change a functional group state of the first region and make the first region to form an insulator, and making a second region of the graphene thin-film except the first region form a pattern of an X or Y sensing line; and removing the photomasks. In an etching-free manner, graphene is applied to the touch panel so as to make the physical structure of the graphene thin-film material maintain continuity and completion after reacting with the strong oxidant; and the method makes it not easy to crack the graphene thin-film with a patterned electrical property but a continuous physical structure in a transferring process so as to effectively improve the percent of pass of the transferring process.
Description
Technical field
The present invention relates to the manufacture method of a kind of graphene film contact panel, particularly relate to the manufacture method of a kind of graphene film contact panel exempting from etch process.
Background technology
Chemical gaseous phase deposition (CVD, Chemical Vapor
Deposition) technology used by semiconductor industry growth thin film.Typical CVD processing procedure is to be exposed under one or more different predecessors by wafer (substrate), produces, at substrate surface generation chemical reaction and/or chemolysis, the thin film to be deposited.Course of reaction generally also can be supervened different side-products, but mostly can be pulled away, without staying in reaction chamber (Reaction chamber) along with air-flow.Microfabrication processes mostly use CVD technology to deposit the material of multi-form, including monocrystalline, polycrystalline, amorphous and epitaxy material.These materials have silicon, carbon fiber, carbon nano-fiber, nano wire, CNT, SiO2, SiGe, tungsten, silicon-carbon, silicon nitride, the material such as silicon oxynitride and various different high-dielectric coefficients.
Etching (Etching) is to produce chemical reaction with chemical drugs with material, unwanted being partly dissolved in material is got rid of, and retain the part of needs, currently used method has Wet-type etching technology and dry etching technique two kinds, it is widely applied on quasiconductor and MEMS processing procedure, any small protrusion structure can be produced.
The advantage of dry-etching is that microstructure testing is good, can also preferably be showed on electrically, the greatest problem faced needed for but is that the solid byproducts ability that in vacuum machine playscript with stage directions body opposing environment, particle (Particle) and reaction produce is poor, and Wet-type etching then can be complementary with dry-etching pluses and minuses.The advantage of Wet-type etching is that processing procedure is simple, and production capacity speed is fast, and has outstanding etching selectivity.But, because Wet-type etching utilizes chemical reaction to carry out removing of thin film, and chemical reaction there is no specific directivity, therefore another feature of Wet-type etching is iso etching.Section after etching is with the presence of significantly undercutting (Undercut) phenomenon.Wet-type etching course of reaction probably can be divided into three phases: (1) reacting substance is diffused into the surface of material to be etched, and (2) reactant reacts with being etched thin film, and (3) reacted product is from etching diffusion into the surface to solution, and is discharged with solution.In this three phases, reacting the slowest is exactly that the control of etch-rate is crucial, say, that the speed that carries out in stage is i.e. reaction rate.The carrying out of Wet-type etching, generally first with oxidant, such as nitric acid when silicon, aluminum etching, will be etched material oxidation, form oxide (eg.SiO2, Al2O3), recycle another solvent, the Fluohydric acid. (HF) in etching such as silicon, the phosphoric acid (H in aluminum etching3PO4), this oxide layer to be dissolved, and gets rid of with solution, the newest oxide layer is formed once again, and abovementioned steps repeatedly the most just can reach the effect of etching.
The operation principle of capacitance type touch-control panel is to detect the capacitance variations that sensing face is brought by the electrostatic capacitance of finger.Projected capacitive touch technology can be divided into line sensing (Wire Sensing) and electrical network to sense the big class of (Grid Sensing) two, and lametta is clipped between glass plate (or plastic foil) by its center line sensing, becomes touch sensor.The diameter of metal wire is about some tens of pm, is arranged in the pattern of complexity, even if across the glass of 20 millimeters thick, also can detect the signal of X Yu Y both direction, can be used in outdoor or explosion-proof environment.On the other hand, electrical network sensing, to be arranged in cancellate nesa coating as touch sensor, is the projected capacitive touch technology used on the mobile phones such as current intelligent mobile phone.
In graphene film is touch panel structure provided, the role of Graphene is for substituting tin indium oxide (ITO, Indium Tin Oxide) transparency electrode of material, and graphene film is applied to the technology of contact panel for unwanted graphene film region is utilized laser beam or oxygen (O at present2) electric paste etching falls, and the method can occur graphene film to rupture to cause qualification rate to reduce in making graphical transfer process.
Therefore, the manufacture method of a kind of graphene film contact panel exempting from etch process is provided, its processing procedure is when electrical patterned graphene film thin film carries out printing process, described graphene film thin-film material physical arrangement is made still to keep continuous whole, and it is effectively improved the qualification rate of printing process, become the technical barrier that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of graphene film contact panel, in order to avoid the strong oxidizer of etch process produces reaction with graphene film, make described graphene film thin-film material physical arrangement still keep continuous whole.
For achieving the above object, the present invention provides the manufacture method of a kind of graphene film contact panel, comprising: offer substrate, and on substrate, form graphene film, described graphene film is formed graphical light shield, the first area that described graphene film is not covered by described light shield is contacted with strong oxidizer, to change functional group's state of described first area, make described first area form insulator, after the pattern of second area formation X or the Y sense line beyond the described first area of described graphene film, remove described light shield.
In one embodiment of this invention, the step forming graphene film on the substrate is that the chemical technology processing procedure by solid-state material makes graphene film be grown on metal for the solid catalyst of chief active component, and transfer graphene film is on substrate.
In one embodiment of this invention, the pattern of X and Y sense line separates at the same face of described substrate, the part insulant of the pattern bridge joint of described X and Y sense line, the pattern of bridge joint X and Y sense line.
In another embodiment of the invention, the pattern of X and Y sense line is respectively formed on two described substrates, after by substrate for cementing optically transparent component extraordinary adhesive fit, flexible printed wiring board of rejoining.
In one embodiment of this invention, substrate is transparency carrier.
In one embodiment of this invention, substrate is face glass, plastic front board or quartz panel.
In one embodiment of this invention, strong oxidizer is solid-state, liquid, gaseous state or plasma-based state.
In one embodiment of this invention, after first area forms insulator, use solvent to will be left in the strong oxidizer of residual on described graphene film and removed.
The present invention exempts from etching mode because of employing and Graphene is applied to contact panel, because graphene film thin-film material physical arrangement after strong oxidizer reacts still keeps continuous whole, make the most patterned graphene film carry out during printing process to be not easily broken, there is the advantage being effectively improved printing process qualification rate.
Accompanying drawing explanation
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Fig. 1 is the flow chart of an illustrative examples of the manufacture method of the graphene film contact panel of the present invention.
Fig. 2 is the schematic diagram of an illustrative examples of the manufacture method of the graphene film contact panel of the present invention.
Fig. 3 is the schematic diagram of an exemplary embodiment of the graphene film contact panel of the present invention.
Fig. 4 is the schematic perspective view of an exemplary embodiment of the graphene film contact panel of the present invention.
Fig. 5 is the enlarged drawing in the A district of Fig. 3.
Fig. 6 is the schematic diagram of the another exemplary embodiment of the graphene film contact panel of the present invention.
Description of symbols:
1 strong oxidizer
2 substrates
3 first areas
4 second areas
5 flexible circuit boards
6 graphene films
7 light shields
8 X sense line
9 Y sense line
10 optical cements
11 metal bridge joints
S1 electrically-conductive backing plate
S2 presets graphene film nonconductive regions
S3 coating strong oxidizer
S4 oxidation reaction changes graphene film functional group's state
S5 completes graphene film conduction region and graphene film nonconductive regions.
Detailed description of the invention
Fig. 1 show the flow chart of an illustrative examples of the manufacture method of a kind of graphene film contact panel of the embodiment of the present invention, Fig. 2 show the schematic diagram of an illustrative examples of the manufacture method of the graphene film contact panel of the present invention, Fig. 3 is the schematic diagram of an exemplary embodiment of the graphene film contact panel of a kind of present invention, Fig. 4 is the schematic perspective view of an exemplary embodiment of the graphene film contact panel of the present invention, Fig. 5 is the enlarged drawing in the A district of a kind of Fig. 3, Fig. 6 is the schematic diagram of the another exemplary embodiment of the graphene film contact panel of the present invention.
In order to prevent current processing procedure from utilizing laser beam or O2Plasma-based falls unnecessary graphene film material etches, and the present invention uses following methods: refer to the flow chart of an illustrative examples that Fig. 1, Fig. 1 are the manufacture methods of graphene film contact panel.Its show carry out on step S1 electrically-conductive backing plate selection be not required to use region select insulating regions, graphene film nonconductive regions is preset in step S2, and then in nonconductive regions, carry out step S3 coating strong oxidizer and make nonconductive regions change graphene film functional group, described strong oxidizer can be solid-state, liquid, gaseous state, any one aspect of plasma-based state, step S4 is that reaction change graphene film functional group's state to be oxidized processes, then step S4 carries out step S5 and completes separating of graphene film conduction region and graphene film nonconductive regions, and the physical arrangement that reaches graphene film material is continuous whole and improves the effect of printing process qualification rate.
Fig. 2 is the schematic diagram of an illustrative examples of the manufacture method of the graphene film contact panel of the present invention, making graphene film 6 be grown on metal for the solid catalyst of chief active component through chemical vapor deposition process on substrate 2, metallic catalyst is mainly the transition element such as noble metal and copper, ferrum, cobalt, nickel.Wherein, catalyst is divided into monometallic and multimetal reforming catalyst；nullThe graphene film 6 generated is needed on substrate 2，Wherein，Because graphene layer Material Physics structure is the most continuous whole，The method of its transfer includes: screen painting (Screen Printing)、Transfer (Transfer Printing)、Intaglio printing (Gravure)、Letterpress (Letterpress)、Ink-jet (Inkjet)、Soak (Dipping)、Method of spin coating (Spin Coating)、Spraying (Spray) method、Comma rubbing method (Comma Coating)、Bar rubbing method (RDS Coating)、Lithographic printing (Lithography)、Slit coating method (Die Coating)、Curtain type rubbing method (Curtain Coating) and cylinder rubbing method (Roller Coating) one of them；Then, form graphical light shield 7, the first area 3 that graphene film 6 is not covered by light shield 7 is contacted with strong oxidizer 1, to change first area 3 functional group's state, first area 3 is made to form insulator, after second area 4 beyond first area 3 forms the pattern of X or Y sense line, use water or organic solvent to will be left in the strong oxidizer 1 of residual on described graphene film 6 and removed.
The schematic diagram of one exemplary embodiment of graphene film contact panel refers to Fig. 3, Fig. 4 or Fig. 5.After strong oxidizer is removed; then; remove light shield; part photoresistance or protecting film (over coat) that on substrate 2, X sense line 8 links with Y sense line 9 separate, then connect by metal bridge joint 11 (metal bridge) X (or Y) sense line and X (or Y) sense line.
Fig. 6 is the schematic diagram of the another exemplary embodiment processed of the graphene film contact panel of the present invention, X substrate and the sense line of Y substrate is formed by the manufacture method of a kind of graphene film contact panel, the pattern of X sense line 8 and Y sense line 9 is respectively formed on two substrates, after by two substrates with optical cement 10 (OCA, Optically Clear
Adhesive) laminating, rejoin flexible circuit board 5 (FPC, Flexible Print
Circuit)。
In sum, the manufacture method of a kind of graphene film contact panel exempting from etch process proposed by the invention, it utilizes strong oxidizer method to change Graphene functional group and forms the insulation layer of non-etched, and therefore the present invention is not required to use etching to carry out processing procedure.Compared to prior art, the present invention occurs graphene film not cause qualification rate to reduce because etching ruptures former functional group in making graphical transfer process, therefore the present invention makes nonconductive regions graphene film thin-film material physical arrangement keep continuous whole, and is effectively improved the qualification rate of printing process.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (10)
1. the manufacture method of graphene film contact panel, it is characterised in that including:
Substrate is provided；
Form graphene film on the substrate；
Described graphene film is formed graphical light shield；
The first area that described graphene film is not covered by described light shield is contacted with strong oxidizer, to change functional group's state of described first area, described first area is made to form insulator, second area beyond the described first area of described graphene film forms the pattern of X sense line, or form the pattern of Y sense line, or form the pattern of X and Y sense line；With
Remove described light shield.
The manufacture method of graphene film contact panel the most according to claim 1, wherein, the step forming described graphene film on the substrate includes making described graphene film be grown on catalyst metals through the chemical technology processing procedure of solid-state material, then transfers described graphene film on described substrate.
The manufacture method of graphene film contact panel the most according to claim 2, wherein, the chemical technology processing procedure of described solid-state material includes chemical vapor deposition process.
The manufacture method of graphene film contact panel the most according to claim 1, also include: when the second area of described graphene film forms the pattern of described X and Y sense line, the bridge areas as there of the pattern of described X or Y sense line is formed insulating barrier, and on described insulating barrier, forms bridge circuit.
The manufacture method of graphene film contact panel the most according to claim 1, also include: when the second area of described graphene film forms the pattern of described X sense line, or when forming the pattern of Y sense line, the pattern of described X sense line and the pattern of described Y sense line are respectively formed on two described substrates, then are fitted with viscose glue by two described substrates.
The manufacture method of graphene film contact panel the most according to claim 5, wherein, described viscose glue includes transparent optical cement.
The manufacture method of graphene film contact panel the most according to claim 1, wherein, described substrate is transparency carrier.
The manufacture method of graphene film contact panel the most according to claim 1, wherein, described substrate is face glass, plastic front board or quartz panel.
The manufacture method of graphene film contact panel the most according to claim 1, wherein, described strong oxidizer is solid-state, liquid, gaseous state or plasma-based state.
The manufacture method of graphene film contact panel the most according to claim 1, the most also includes: after described first area forms insulator, uses solvent to will be left in the strong oxidizer of residual on described graphene film and is removed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510034511.XA CN105867670A (en) | 2015-01-23 | 2015-01-23 | Manufacturing method for graphene thin-film touch panel |
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| CN201510034511.XA CN105867670A (en) | 2015-01-23 | 2015-01-23 | Manufacturing method for graphene thin-film touch panel |
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| CN105867670A true CN105867670A (en) | 2016-08-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106526991A (en) * | 2016-12-02 | 2017-03-22 | 深圳市华星光电技术有限公司 | Electrode manufacturing method and liquid crystal display panel |
| CN108597648A (en) * | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
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| JP2004193008A (en) * | 2002-12-12 | 2004-07-08 | Bridgestone Corp | Formation method of transparent conductive thin film, transparent conductive thin film, transparent conductive film, and touch panel |
| CN101000873A (en) * | 2006-01-12 | 2007-07-18 | 台湾薄膜电晶体液晶显示器产业协会 | Manufacturing method of metal layer direct pattern of semiconductor element |
| CN103487973A (en) * | 2012-06-12 | 2014-01-01 | 介面光电股份有限公司 | Manufacturing method of touch control sensing element of polaroid and polarization device manufactured by adopting method |
| CN104109859A (en) * | 2013-04-16 | 2014-10-22 | 瑞化股份有限公司 | Aqueous etchant, conductive circuit structure thereof and conductive circuit patterning preparation method |
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2015
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Patent Citations (4)
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| JP2004193008A (en) * | 2002-12-12 | 2004-07-08 | Bridgestone Corp | Formation method of transparent conductive thin film, transparent conductive thin film, transparent conductive film, and touch panel |
| CN101000873A (en) * | 2006-01-12 | 2007-07-18 | 台湾薄膜电晶体液晶显示器产业协会 | Manufacturing method of metal layer direct pattern of semiconductor element |
| CN103487973A (en) * | 2012-06-12 | 2014-01-01 | 介面光电股份有限公司 | Manufacturing method of touch control sensing element of polaroid and polarization device manufactured by adopting method |
| CN104109859A (en) * | 2013-04-16 | 2014-10-22 | 瑞化股份有限公司 | Aqueous etchant, conductive circuit structure thereof and conductive circuit patterning preparation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526991A (en) * | 2016-12-02 | 2017-03-22 | 深圳市华星光电技术有限公司 | Electrode manufacturing method and liquid crystal display panel |
| CN108597648A (en) * | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
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