CN105847713A - 3D stacked structure image sensor reading method based on one-dimensional decoding - Google Patents
3D stacked structure image sensor reading method based on one-dimensional decoding Download PDFInfo
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- CN105847713A CN105847713A CN201610216362.3A CN201610216362A CN105847713A CN 105847713 A CN105847713 A CN 105847713A CN 201610216362 A CN201610216362 A CN 201610216362A CN 105847713 A CN105847713 A CN 105847713A
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 9
- 230000037361 pathway Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000012935 Averaging Methods 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 4
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000012536 packaging technology Methods 0.000 abstract 1
- 238000004088 simulation Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T3/00—Geometric image transformations in the plane of the image
- G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
- G06T3/4007—Scaling of whole images or parts thereof, e.g. expanding or contracting based on interpolation, e.g. bilinear interpolation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention relates to the technical field of simulation integrated circuit design and the 3D lamination packaging technology and solves a problem of low image quality caused by reading failure of the whole pixel array signal because of mubump, ADC or TSV failure. The method comprises steps that a pixel array is divided into multiple sub processing modules in a mode of the row or the column, pixels of each row or each column of the sub processing modules are connected with one same ADC through a mubump pathway, each ADC is connected with an ISP layer through a respective TSV pathway, so the row or the column is selected to read through only one-dimensional decoding for the row or the column, when the mubump, the ADC or the TSV on a certain pixel signal reading pathway partially fails, the ISP is firstly determined to be abnormal, and failed pixel signal values can be recovered through employing linear interpolation. The method is mainly applied to integrated circuit design manufacturing occasions.
Description
Technical field
The present invention relates to analogue layout and 3D stacked package Technology field, be one meet simultaneously novelty,
High frame frequency, small size, the imageing sensor of low cost demand.Concretely relate to 3D stacked structure imageing sensor and read method.
Background technology
3D stacked structure imageing sensor (structure is as shown in Figure 1) utilizes the vertical interconnection of each layer chip chamber, it is possible to achieve signal
Parallel processing.Frame frequency is limited compared to the conversion speed by analog-digital converter (Analog-to-Digital Converter, ADC)
Conventional planar cmos image sensor, 3D stacked structure imageing sensor can while circuit performance is constant exponentially
Improve frame frequency.In 3D stacking imageing sensor, the signal of pixel cell collection is through dimpling block μ bump, ADC and passes through silicon
Sheet passage (Through Silicon Vias, TSV) is delivered in image-signal processor (Image Signal Processor, ISP).Due to
Therefore the area of ADC unit need to can not arrange an independent ADC for each pixel cell less than the area of associated pixel
Module, therefore whole pel array is cut into the subarray of formed objects, each subarray is via corresponding one of μ bump path
ADC.Each ADC is connected on image processor ISP via respective TSV path.If at μ bump, ADC and TSV
Signal transmission path in arbitrary portion lost efficacy, then can make pel array dropout, ultimately result in picture quality degradation.
Summary of the invention
For overcoming the deficiencies in the prior art, the present invention intends proposing a kind of 3D based on pel array one-dimensional decoding and fault tolerance reading method
Stacked structure imageing sensor.Eliminate owing to μ bump, ADC or TSV inefficacy makes whole pel array signal to read
The problem ultimately resulting in image degradation.The technical solution used in the present invention is, the 3D stacking knot read based on one-dimensional decoding
Structure imageing sensor reading method, is divided into some sub-processing modules by pel array by row or column, by this little processing module
Often row or each column pixel are connected to same analog-digital converter ADC by dimpling block μ bump path, and each ADC is via each
Silicon chip passage TSV path be connected in image processor ISP level so that row or column select read time only need to carry out column or row
One-dimensional decoding read, when some picture element signal read μ bump, ADC or TSV arbitrary portion on path lost efficacy time,
Can first determine whether out that in ISP pixel reads abnormal, by the method using linear interpolation, recover failed pixels signal value,
Impact picture quality produced to reduce signal transmission pathway to lose efficacy.
Pixel cell selects 4 pipe units, is i.e. made up of photosensitive unit, transfer pipe, reset transistor, source class follower, line EAC
4T unit, wherein the line EAC in pixel cell can complete pixel gating function, it is not necessary to extra increasing selects switch.
Wherein linear interpolation algorithm i.e. takes its adjacent two pixel signal values and is averaging the signal value serving as this failed pixels signal.
The feature of the present invention and providing the benefit that:
By the method read based on the one-dimensional decoding and fault tolerance of pel array, it is ensured that when some picture element signal reads on path
When μ bump, ADC or TSV lost efficacy, available linear interpolation algorithm recovers this failed pixels signal, reduces picture element signal and lost efficacy
Impact on picture quality.And this reading method makes the reading of each pixel cell signal only need to carry out one-dimensional column (or row) solution
Code.Compared to intersecting the reading method such as fault-tolerant reading, this method without increase the gating switch of pixel and pel array and ADC it
Between connecting wiring simpler.
Accompanying drawing illustrates:
Fig. 1 tradition 3D stacking image sensor architecture figure.
The 3D stacked structure image sensor architecture figure that Fig. 2 reads based on the one-dimensional decoding and fault tolerance of pel array.
Detailed description of the invention
The image sensor architecture of the design is divided into some sub-processing modules as in figure 2 it is shown, pel array presses row (or row),
It is connected to same ADC, each ADC warp by μ bump path by this little processing module often goes (or each column) pixel
It is connected in ISP level by respective TSV path.This connected mode make row (or row) only need to carry out when selecting and reading arranging (or
One-dimensional decoding OK) reads, and pixel cell can be selected for standard 4T unit, it is not necessary to increases and selects switch, simplifies pel array wiring
Design.When some picture element signal reads μ bump, ADC or TSV arbitrary portion inefficacy on path, meeting in ISP
First determine whether out that pixel reads abnormal, by the method using linear interpolation, recover failed pixels signal value, to reduce signal
The impact that picture quality is produced by transmission channel inefficacy.Wherein linear interpolation algorithm i.e. takes its adjacent two pixel signal values and is averaging
Serve as the signal value of this failed pixels signal.
Pixel cell can be selected for 4 the most the most commonly used pipe (4T) unit, i.e. by photosensitive unit, transfer pipe, reset transistor, source class
The 4T unit of follower, line EAC composition.Wherein the line EAC in pixel cell can complete to be applied to the picture that one-dimensional decoding reads
Element gating function, it is not necessary to extra increasing selects switch.
Use based on pel array one-dimensional decoding and fault tolerance reading method, it is ensured that when the signal comprising μ bump, ADC and TSV
When in transmission path, arbitrary portion loses efficacy, picture quality was without being decreased obviously.
Claims (3)
1. based on one-dimensional decoding read 3D stacked structure imageing sensor read a method, it is characterized in that, pel array by row or
Row are divided into some sub-processing modules, by this little processing module, often row or each column pixel pass through dimpling block μ bump path
Being connected to same analog-digital converter ADC, each ADC is connected at image via respective silicon chip passage TSV path
In reason device ISP level so that row or column only need to carry out the one-dimensional decoding of column or row and read, when some pixel when selecting and reading
When signal reads μ bump, ADC or TSV arbitrary portion inefficacy on path, can first determine whether out that in ISP pixel is read
Go out exception, by the method using linear interpolation, recover failed pixels signal value, right to reduce signal transmission pathway inefficacy
The impact that picture quality produces.
2. the 3D stacked structure imageing sensor read based on one-dimensional decoding as claimed in claim 1 reads method, it is characterized in that,
Pixel cell selects 4 pipe units, is i.e. made up of photosensitive unit, transfer pipe, reset transistor, source class follower, line EAC
4T unit, wherein the line EAC in pixel cell can complete pixel gating function, it is not necessary to extra increasing selects switch.
3. the 3D stacked structure imageing sensor read based on one-dimensional decoding as claimed in claim 1 reads method, it is characterized in that,
Wherein linear interpolation algorithm i.e. takes its adjacent two pixel signal values and is averaging the signal value serving as this failed pixels signal.
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CN201610216362.3A CN105847713A (en) | 2016-04-07 | 2016-04-07 | 3D stacked structure image sensor reading method based on one-dimensional decoding |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109246372A (en) * | 2018-10-22 | 2019-01-18 | 天津大学 | 3D based on block parallel fault-tolerant architecture stacks imaging sensor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110699A (en) * | 2009-12-16 | 2011-06-29 | 三星电子株式会社 | Image sensor module, method of manufacturing same, and image processing system including image sensor module |
US20130265066A1 (en) * | 2012-04-06 | 2013-10-10 | Industrial Technology Research Institute | Pixel array module with self-test function and method thereof |
CN103650476A (en) * | 2011-05-12 | 2014-03-19 | 橄榄医疗公司 | Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects |
CN103685991A (en) * | 2013-12-31 | 2014-03-26 | 北京国药恒瑞美联信息技术有限公司 | Serial read photon counting chip |
CN104297268A (en) * | 2013-07-17 | 2015-01-21 | 株式会社岛津制作所 | Two-dimensional image detecting system |
-
2016
- 2016-04-07 CN CN201610216362.3A patent/CN105847713A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110699A (en) * | 2009-12-16 | 2011-06-29 | 三星电子株式会社 | Image sensor module, method of manufacturing same, and image processing system including image sensor module |
CN103650476A (en) * | 2011-05-12 | 2014-03-19 | 橄榄医疗公司 | Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects |
US20130265066A1 (en) * | 2012-04-06 | 2013-10-10 | Industrial Technology Research Institute | Pixel array module with self-test function and method thereof |
CN104297268A (en) * | 2013-07-17 | 2015-01-21 | 株式会社岛津制作所 | Two-dimensional image detecting system |
CN103685991A (en) * | 2013-12-31 | 2014-03-26 | 北京国药恒瑞美联信息技术有限公司 | Serial read photon counting chip |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109246372A (en) * | 2018-10-22 | 2019-01-18 | 天津大学 | 3D based on block parallel fault-tolerant architecture stacks imaging sensor |
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Application publication date: 20160810 |