CN105845830A - Organic light-emitting device structure - Google Patents
Organic light-emitting device structure Download PDFInfo
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- CN105845830A CN105845830A CN201510012815.6A CN201510012815A CN105845830A CN 105845830 A CN105845830 A CN 105845830A CN 201510012815 A CN201510012815 A CN 201510012815A CN 105845830 A CN105845830 A CN 105845830A
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Abstract
The invention discloses an organic light-emitting device structure, and the structure comprises a substrate, an anode layer, a hole transmission layer, a composite light-emitting layer, an electronic transmission layer, and a cathode layer, wherein the anode layer, the hole transmission layer, the composite light-emitting layer, the electronic transmission layer and the cathode layer are prepared on the substrate. The composite light-emitting layer comprises a doped light-emitting layer and a non-doped light emitting layer. The interior of the doped light-emitting layer is provided with light-emitting subjects and doped objects in a scattered manner. The interior of the non-doped light emitting layer is only provided with light-emitting subjects in a scattered manner. According to the invention, the interior of the doped light-emitting layer is provided with the light-emitting subjects and doped objects in the scattered manner, and the interior of the non-doped light emitting layer is only provided with the light-emitting subjects in the scattered manner, thereby increasing the number of interfaces formed between the light-emitting subjects and the doped objects, improving the probability of composite light emission of excitons at the interfaces, and improving the light-emitting efficiency of an organic light-emitting device.
Description
Technical field
The present invention designs organic luminescent device display field, refers in particular to a kind of organic luminescent device knot
Structure.
Background technology
In flat panel display, Organic Light Emitting Diode (Organic Light-Emitting Diode,
OLED) display is frivolous with it, active illuminating, fast-response speed, wide viewing angle, rich color and
The many merits such as high brightness, low-power consumption, high-low temperature resistant and be known as being the liquid crystal display that continues by industry
(LCD) third generation Display Technique after.By type of drive, OLED is divided into passive type OLED
(Passive Matrix OLED, PMOLED) and active OLED (Active Matrix OLED,
AMOLED), PMOLED is also referred to as passive matrix OLED, and AMOLED is referred to as active matrix
OLED, wherein PMOLED can only make the display floater of small size, low resolution, AMOLED
Because of by integrated thin-film transistor (TFT) in each pixel and capacitor and by capacitor maintenance electricity
The method of pressure is driven, thus can realize large scale, resolution panels, is current research
Emphasis and the developing direction of following Display Technique.
Fig. 1 is the structural representation of existing OLED structure, and Fig. 2 is organic in Fig. 1
The structural representation of the recombination luminescence layer of emitting device structure.See shown in Fig. 1 Yu Fig. 2, common
OLED structure, including substrate 90, and be sequentially prepared on substrate 90 anode layer 91,
Hole transmission layer 92, organic luminous layer 93, electron transfer layer 94 and cathode layer 95.Wherein,
Organic luminous layer 93 includes light emitting host 931 and doping object 932.Shown in Fig. 2, existing
OLED structure, the doping object 932 of organic luminous layer 93 is the most equal
Even being scattered in light emitting host 931, such structure can cause device light emitting efficiency low, and the life-span is short
Problem.
Therefore, it is necessary to existing OLED structure is improved.
Summary of the invention
Because above-mentioned existing OLED structure luminous efficiency is low, the problem that the life-span is short, this
Invention provides a kind of OLED structure, including:
Substrate, and be prepared in the anode layer on described substrate, hole transmission layer, recombination luminescence layer,
Electron transfer layer and cathode layer；
Wherein, described recombination luminescence layer includes adulterate luminescent layer and undoped luminescent layer, and described doping is sent out
It is scattered with light emitting host and doping object in photosphere, is only scattered with luminous main in described undoped luminescent layer
Body.
The OLED structure of the present invention, luminous main by being scattered with in described doping luminescent layer
Body and doping object, be only scattered with light emitting host in described undoped luminescent layer, can increase luminescence
The quantity at the interface formed between main body and doping object, and then improve exciton recombination luminescence on interface
Probability, improve the luminous efficiency of organic luminescent device.
Further improvement is that of OLED structure of the present invention, described recombination luminescence layer includes one
Layer doping luminescent layer and one layer of undoped luminescent layer, described undoped luminescent layer is formed at described compound
Photosphere is near the side of described electron transfer layer.
Further improvement is that of OLED structure of the present invention, described recombination luminescence layer includes one
Layer doping luminescent layer and one layer of undoped luminescent layer, described undoped luminescent layer is formed at described compound
Photosphere is near the side of described hole transmission layer.
Further improvement is that of OLED structure of the present invention, described recombination luminescence layer includes one
Layer doping luminescent layer is luminous with the two-layer undoped being respectively formed in described doping luminescent layer opposite sides
Layer, described in two-layer, undoped luminescent layer is respectively close to described electron transfer layer and described hole transmission layer.
Further improvement is that of OLED structure of the present invention, the number of described undoped luminescent layer
Amount is three layers, and described recombination luminescence layer is relative with described hole transmission layer near described electron transfer layer
Both sides are respectively formed with one layer of described undoped luminescent layer, and the middle part of described recombination luminescence layer is formed with one
The described undoped luminescent layer of layer.
Further improvement is that of OLED structure of the present invention, the number of described undoped luminescent layer
Amount is for more than three layers, and described recombination luminescence layer is near described electron transfer layer and described hole transmission layer
Opposite sides is respectively formed with one layer of described undoped luminescent layer, and the middle part of described recombination luminescence layer is formed
There is undoped luminescent layer described in multilamellar.
Further improvement is that of OLED structure of the present invention, described light emitting host is mixed with described
Miscellaneous object is fluorescent material.
Further improvement is that of OLED structure of the present invention, the institute in described doping luminescent layer
State doping object to be dispersed in described light emitting host.
Further improvement is that of OLED structure of the present invention, the institute in described doping luminescent layer
State doping object to be dispersed in described light emitting host.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing OLED structure.
Fig. 2 is the structural representation of the recombination luminescence layer of the OLED structure in Fig. 1.
Fig. 3 is the first embodiment structural representation of OLED structure of the present invention.
Fig. 4 is the structural representation of the recombination luminescence layer of the OLED structure in Fig. 3.
Fig. 5 is the second example structure schematic diagram of OLED structure of the present invention.
Fig. 6 is the structural representation of the recombination luminescence layer of the OLED structure in Fig. 5.
Fig. 7 is the 3rd example structure schematic diagram of OLED structure of the present invention.
Fig. 8 is the structural representation of the recombination luminescence layer of the OLED structure in Fig. 7.
Fig. 9 is the 4th example structure schematic diagram of OLED structure of the present invention.
Figure 10 is the structural representation of the recombination luminescence layer of the OLED structure in Fig. 9.
Figure 11 is the 5th example structure schematic diagram of OLED structure of the present invention.
Figure 12 is the structural representation of the recombination luminescence layer of the OLED structure in Figure 11.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing
And embodiment, the present invention is further elaborated.Should be appreciated that described herein specifically
Embodiment only in order to explain the present invention, is not intended to limit the present invention.
The OLED structure of the present invention, including:
Substrate, and be prepared in the anode layer on described substrate, hole transmission layer, recombination luminescence layer,
Electron transfer layer and cathode layer；
Wherein, described recombination luminescence layer includes adulterate luminescent layer and undoped luminescent layer, and described doping is sent out
It is scattered with light emitting host and doping object in photosphere, is only scattered with luminous main in described undoped luminescent layer
Body.Described doping object in described doping luminescent layer is dispersed in described light emitting host, and,
Described light emitting host and described doping object are fluorescent material.
The OLED structure of the present invention, luminous main by being scattered with in described doping luminescent layer
Body and doping object, be only scattered with light emitting host in described undoped luminescent layer, can increase luminescence
The quantity at the interface formed between main body and doping object, and then improve exciton recombination luminescence on interface
Probability, improve the luminous efficiency of organic luminescent device.
Below in conjunction with accompanying drawing and specific embodiment, the OLED structure of the present invention is carried out in detail
Thin introduction.
Embodiment 1:
Fig. 3 is the first embodiment structural representation of OLED structure of the present invention, and Fig. 4 is figure
The structural representation of the recombination luminescence layer of the OLED structure in 3.Coordinate referring to Fig. 3 and figure
Shown in 4, in this embodiment, the OLED structure of the present invention, including:
Substrate 10A, and be sequentially prepared on substrate 10A anode layer 20A, hole transmission layer
30A, recombination luminescence layer 40A, electron transfer layer 50A and cathode layer 60A；
Wherein, shown in Fig. 4, recombination luminescence layer 40A includes adulterating luminescent layer 410A and non-mix
Miscellaneous luminescent layer 420A, is scattered with light emitting host 401A and doping object in doping luminescent layer 410A
402A, is only scattered with light emitting host 401A in undoped luminescent layer 420A, and, doping luminescence
Doping object 402A in layer 410A is dispersed in light emitting host 401A.In this embodiment
In, the quantity of undoped luminescent layer 420A is one layer, is formed at recombination luminescence layer 40A near electronics
The side of transport layer 50A.
Embodiment 2:
Fig. 5 is the second example structure schematic diagram of OLED structure of the present invention, and Fig. 6 is figure
The structural representation of the recombination luminescence layer of the OLED structure in 5.Coordinate referring to Fig. 5 and figure
Shown in 6, in this embodiment, the OLED structure of the present invention, including:
Substrate 10B, and be sequentially prepared on substrate 10B anode layer 20B, hole transmission layer
30B, recombination luminescence layer 40B, electron transfer layer 50B and cathode layer 60B；
Wherein, shown in Fig. 6, recombination luminescence layer 40B includes adulterating luminescent layer 410B and non-mix
Miscellaneous luminescent layer 420B, is scattered with light emitting host 401B and doping object in doping luminescent layer 410B
402B, is only scattered with light emitting host 401B in undoped luminescent layer 420B, and, doping luminescence
Doping object 402B in layer 410B is dispersed in light emitting host 401B.In this embodiment,
The quantity of undoped luminescent layer 420B is one layer, is formed at recombination luminescence layer 40B near hole transport
The side of layer 30B.
Embodiment 3:
Fig. 7 is the 3rd example structure schematic diagram of OLED structure of the present invention, and Fig. 8 is figure
The structural representation of the recombination luminescence layer of the OLED structure in 7.Coordinate referring to Fig. 7 and figure
Shown in 8, in this embodiment, the OLED structure of the present invention, including:
Substrate 10C, and be sequentially prepared on substrate 10C anode layer 20C, hole transmission layer
30C, recombination luminescence layer 40C, electron transfer layer 50C and cathode layer 60C；
Wherein, shown in Fig. 8, recombination luminescence layer 40C includes adulterating luminescent layer 410C and non-mix
Miscellaneous luminescent layer 420C, is scattered with light emitting host 401C and doping object in doping luminescent layer 410C
402C, is only scattered with light emitting host 401C in undoped luminescent layer 420C, and, doping luminescence
Doping object 402C in layer 410C is dispersed in light emitting host 401C.In this embodiment,
The quantity of undoped luminescent layer 420C is two-layer, is respectively formed in recombination luminescence layer 40C near electronics
Transport layer 50C and the opposite sides of hole transmission layer 30C.
Embodiment 4:
Fig. 9 is the 4th example structure schematic diagram of OLED structure of the present invention, Tu10Shi
The structural representation of the recombination luminescence layer of the OLED structure in Fig. 9.Coordinate referring to Fig. 9
Shown in Figure 10, in this embodiment, the OLED structure of the present invention, including:
Substrate 10D, and be sequentially prepared on substrate 10D anode layer 20D, hole transmission layer
30D, recombination luminescence layer 40D, electron transfer layer 50D and cathode layer 60D；
Wherein, shown in Figure 10, recombination luminescence layer 40D includes the luminescent layer 410D and non-of adulterating
Doping luminescent layer 420D, is scattered with light emitting host 401D and doping object in doping luminescent layer 410D
402D, is only scattered with light emitting host 401D in undoped luminescent layer 420D, and, doping luminescence
Doping object 402D in layer 410D is dispersed in light emitting host 401D.In this embodiment
In, the quantity of undoped luminescent layer 420D is three layers, and recombination luminescence layer 40D is near electron transfer layer
The opposite sides of 50D and hole transmission layer 30D is respectively formed with one layer of undoped luminescent layer 420D,
The middle part of recombination luminescence layer 40D is formed with one layer of undoped luminescent layer 420D.
Embodiment 5:
Figure 11 is the 5th example structure schematic diagram of OLED structure of the present invention, Figure 12
It it is the structural representation of the recombination luminescence layer of OLED structure in Figure 10.Coordinate referring to figure
Shown in 11 and Figure 12, in this embodiment, the OLED structure of the present invention, including:
Substrate 10E, and be sequentially prepared on substrate 10E anode layer 20E, hole transmission layer
30E, recombination luminescence layer 40E, electron transfer layer 50E and cathode layer 60E；
Wherein, shown in Figure 12, recombination luminescence layer 40E includes the luminescent layer 410E and non-of adulterating
Doping luminescent layer 420E, is scattered with light emitting host 401E and doping object in doping luminescent layer 410E
402E, is only scattered with light emitting host 401E in undoped luminescent layer 420E, and, doping luminescence
Doping object 402E in layer 410E is dispersed in light emitting host 401E.In this embodiment,
The quantity of undoped luminescent layer 420E is more than three layers, and recombination luminescence layer 40E is near electron transfer layer
The opposite sides of 50E and hole transmission layer 30E is respectively formed with one layer of undoped luminescent layer 420E,
The middle part of recombination luminescence layer 40E is formed with multilamellar undoped luminescent layer 420E.
The above is only presently preferred embodiments of the present invention, not the present invention is done any in form
Restriction, although the present invention is disclosed above with preferred embodiment, but is not limited to the present invention,
Any those skilled in the art, in the range of without departing from technical solution of the present invention, when can profit
Make a little change with the technology contents of the disclosure above or be modified to the Equivalent embodiments of equivalent variations, but
Every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention is to above example
Any simple modification, equivalent variations and the modification made, still falls within the range of technical solution of the present invention.
Claims (9)
1. an OLED structure, including substrate, and is prepared in the anode on described substrate
Layer, hole transmission layer, recombination luminescence layer, electron transfer layer and cathode layer, it is characterised in that institute
State recombination luminescence layer and include adulterate luminescent layer and undoped luminescent layer, be scattered with in described doping luminescent layer
Light emitting host and doping object, be only scattered with light emitting host in described undoped luminescent layer.
2. OLED structure as claimed in claim 1, it is characterised in that described compound
Photosphere includes one layer of doping luminescent layer and one layer of undoped luminescent layer, and described undoped luminescent layer is formed at
Described recombination luminescence layer is near the side of described electron transfer layer.
3. OLED structure as claimed in claim 1, it is characterised in that described compound
Photosphere includes one layer of doping luminescent layer and one layer of undoped luminescent layer, and described undoped luminescent layer is formed at
Described recombination luminescence layer is near the side of described hole transmission layer.
4. OLED structure as claimed in claim 1, it is characterised in that described compound
Photosphere includes one layer of doping luminescent layer and is respectively formed in the two-layer of described doping luminescent layer opposite sides
Undoped luminescent layer, undoped luminescent layer described in two-layer is respectively close to described electron transfer layer and described sky
Cave transport layer.
5. OLED structure as claimed in claim 1, it is characterised in that described undoped
The quantity of luminescent layer is three layers, and described recombination luminescence layer passes near described electron transfer layer and described hole
The opposite sides of defeated layer is respectively formed with one layer of described undoped luminescent layer, in described recombination luminescence layer
Portion is formed with one layer of described undoped luminescent layer.
6. OLED structure as claimed in claim 1, it is characterised in that described undoped
The quantity of luminescent layer is more than three layers, and described recombination luminescence layer is near described electron transfer layer and described sky
The opposite sides of cave transport layer is respectively formed with one layer of described undoped luminescent layer, described recombination luminescence layer
Middle part be formed with undoped luminescent layer described in multilamellar.
7. the OLED structure as according to any one of claim 1 to 6, it is characterised in that
Described light emitting host and described doping object are fluorescent material.
8. the OLED structure as according to any one of claim 1 to 6, it is characterised in that
Described doping object in described doping luminescent layer is dispersed in described light emitting host.
9. OLED structure as claimed in claim 7, it is characterised in that described doping is sent out
Described doping object in photosphere is dispersed in described light emitting host.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378409A (en) * | 2001-02-01 | 2002-11-06 | 株式会社半导体能源研究所 | Organic luminous element and display equipment using said element |
| CN1503605A (en) * | 2002-11-20 | 2004-06-09 | Lg������ʽ���� | Highly efficient organic electroluminescent device |
| CN1510754A (en) * | 2002-12-26 | 2004-07-07 | 上海广电电子股份有限公司 | Organic lumine scent displaying devices |
| WO2008131750A2 (en) * | 2007-04-30 | 2008-11-06 | Novaled Ag | Light-emitting component and method for the production thereof |
| CN103229323A (en) * | 2010-11-11 | 2013-07-31 | 日东电工株式会社 | Hybrid composite emissive construct and light-mitting devices using same |
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- 2015-01-12 CN CN201510012815.6A patent/CN105845830A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378409A (en) * | 2001-02-01 | 2002-11-06 | 株式会社半导体能源研究所 | Organic luminous element and display equipment using said element |
| CN1503605A (en) * | 2002-11-20 | 2004-06-09 | Lg������ʽ���� | Highly efficient organic electroluminescent device |
| CN1510754A (en) * | 2002-12-26 | 2004-07-07 | 上海广电电子股份有限公司 | Organic lumine scent displaying devices |
| WO2008131750A2 (en) * | 2007-04-30 | 2008-11-06 | Novaled Ag | Light-emitting component and method for the production thereof |
| CN103229323A (en) * | 2010-11-11 | 2013-07-31 | 日东电工株式会社 | Hybrid composite emissive construct and light-mitting devices using same |
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Application publication date: 20160810 |