CN105841809A - Radiation test circuit based on silicon solar battery - Google Patents
Radiation test circuit based on silicon solar battery Download PDFInfo
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- CN105841809A CN105841809A CN201610302514.1A CN201610302514A CN105841809A CN 105841809 A CN105841809 A CN 105841809A CN 201610302514 A CN201610302514 A CN 201610302514A CN 105841809 A CN105841809 A CN 105841809A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000012360 testing method Methods 0.000 title claims abstract description 10
- 230000005855 radiation Effects 0.000 title abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 230000003321 amplification Effects 0.000 claims abstract description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 11
- 238000001914 filtration Methods 0.000 claims abstract description 10
- 230000033228 biological regulation Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 4
- 230000006870 function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 102100024061 Integrator complex subunit 1 Human genes 0.000 description 1
- 101710092857 Integrator complex subunit 1 Proteins 0.000 description 1
- 206010034133 Pathogen resistance Diseases 0.000 description 1
- 241001323319 Psen Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000036755 cellular response Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4266—Photometry, e.g. photographic exposure meter using electric radiation detectors for measuring solar light
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Current Or Voltage (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a radiation test circuit based on a silicon solar battery. The circuit comprises a silicon solar battery sensor which generates current signals after solar radiation, the current signals are converted into a corresponding voltage analog quantity through a current-voltage conversion circuit, amplified voltage signals are generated when the voltage analog quantity passes through a voltage amplification circuit, when the amplified voltage signals pass through a voltage filtering circuit, simultaneously amplified noise signals are eliminated, filtered voltage amplification signals are sent to an AD converter for generating a corresponding digital quantity, and the digital quantity is sent to a single-chip microcomputer, and thus accurate measurement and calculation and output of radiation are realized. According to the invention, weak electric signals are amplified, an input measurement range of the AD converter is fully utilized, noise is eliminated through filtering, and the radiation measurement and calculation accuracy is improved.
Description
Technical field
The present invention relates to a kind of irradiation based on silicon solar cell test circuit, belong to photovoltaic system technical field.
Background technology
In solar energy industry, along with the quick growth of photovoltaic system installed capacity, the operation evaluation system of photovoltaic system is gradually built
Erecting, most important of which is some photovoltaic system efficiency evaluation.Photovoltaic system efficiency refers generally to actual power output and arrives
The ratio of photovoltaic arrays surface irradiation total amount, the measurement accurate, quick of irradiation is most important to photovoltaic system efficiency evaluation.And light
The calculating of the irradiation intensity of volt efficiency evaluation realizes mainly by solar radiation sensor, and one is made up of combination thermoelectric pile circuit,
Can relatively accurate response radiant intensity, but the impact that photovoltaic generation is arrived by radiation spectrum difference can not be embodied.Another kind then uses silicon
Solar cell is as total solar radiation sensor, basically identical with the solar cell spectral response of photovoltaic generation, eliminates radiant light
The different impact on photovoltaic generation of spectral difference.
Crystal-silicon solar cell response wave band is substantially between 300nm to 1200nm, for less than 300nm and be more than
Substantially without response, there is the impact can not ignore compared with actual irradiance in the wave band of 1200nm.Monolithic monocrystalline silicon sun electricity
The open-circuit voltage that pond produces, typically between 450 to 600mv, reaches as high as 700mv, substantially thinks that common crystal silicon is too
Sun battery open circuit voltage is a more weak signal at about 0.5v, monolithic ordinary silicon solar cell as sensor.With the sun
Battery is as the ultimate principle of global radiation sensor: solar cell, as sensor, produces a certain size electric current after sunshine,
Electric current flows through resistance and produces correspondingly sized voltage, and last resistance is connected with AD conversion, the voltage at single-chip microcomputer collection load two ends
Signal carries out computing.For generally, the voltage range of AD conversion voltage is 0 to 5v or 0 to 3v, if directly
Connect and the magnitude of voltage that resistance produces is directly transmitted to a/d converter can produce bigger with regard to the range of abundant use useless to a/d converter
Error, and the impact of circuit noise cannot be eliminated.
Summary of the invention
The technical problem to be solved is the defect overcoming prior art, it is provided that a kind of irradiation based on silicon solar cell is surveyed
Examination circuit, uses silicon solar cell sensor that solar irradiation is converted into current signal, changes through overvoltage, amplifying circuit, filter
Wave circuit, AD conversion is finally sent into single-chip microcomputer and is calculated.
For solving above-mentioned technical problem, the present invention provides a kind of irradiation based on silicon solar cell to test circuit, including single piece of silicon too
Sun battery sensor, current-voltage conversion circuit, voltage amplifier circuit, filter circuit, a/d converter and single-chip microcomputer；Described
Single piece of silicon solar cell sensor produces current signal after sunlight, and current signal is through current-voltage conversion circuit
Being converted into voltage analog, voltage analog produces the voltage signal of amplification after voltage amplifier circuit, the voltage signal of amplification
Eliminate the noise signal being exaggerated through voltage amplifier circuit through voltage filtering circuit, after filtering after the voltage signal of amplification give
Entering a/d converter, produce corresponding digital quantity, digital quantity is fed to chip microcontroller and to the measuring and calculating of irradiation and exports.
The structure of aforesaid current-voltage conversion circuit is, bridges a resistance at operational amplifier end of oppisite phase and outfan, with
Time shunt-wound capacitance, the current flowing resistance of silicon solar cell, output voltage.
Aforesaid voltage amplifier circuit uses structure symmetrical above and below, buffers input voltage by identical operational amplifier A 1 and A2,
Constitute differential amplifier circuit by operational amplifier A 3, changed the closed loop gain of voltage amplifier circuit by regulation resistance.
Aforesaid filter circuit uses second-order low-pass filter circuit.
The beneficial effect that the present invention is reached:
Weak electric signal is amplified by the present invention, makes full use of the input range of a/d converter, and is eliminated by noise by filtering,
Improve irradiation measuring and calculating degree of accuracy.
Accompanying drawing explanation
Fig. 1 is the signal of telecommunication transfer process figure of the present invention；
Fig. 2 is current-voltage conversion circuit figure；
Fig. 3 is voltage amplifier circuit figure；
Fig. 4 is second-order low-pass filter circuit diagram；
Fig. 5 is a/d converter connection schematic diagram；
Fig. 6 is 8051 single-chip microcomputer schematic diagrams.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.Following example are only used for clearly illustrating the technology of the present invention
Scheme, and can not limit the scope of the invention with this.
Its general principles is: sunlight physical signalling is converted into the signal of telecommunication, then passes through a series of processing of circuit, transmission
Carry out analog digital conversion to a/d converter, complete data volume in final digital signal single-chip microcomputer and calculate and output.
As it is shown in figure 1, irradiation based on the silicon solar cell test circuit of the present invention, including single piece of silicon solar cell sensor,
Single piece of silicon solar cell sensor produces current signal after sunlight, and current signal is through current-voltage conversion circuit
Being converted into voltage analog, voltage analog produces the voltage signal of amplification after voltage amplifier circuit, the voltage signal of amplification
After filtering circuit for eliminating through voltage amplifier circuit be exaggerated noise signal, after filtering after voltage amplification signal send into AD
Transducer, produces corresponding digital quantity, and digital quantity is fed to chip microcontroller and to the accurate measure of irradiation and exports.
The present invention by use silicon solar cell as total solar radiation sensor, with the solar cell spectral response base of photovoltaic generation
This is consistent, eliminates the impact on photovoltaic generation of the radiation spectrum difference.Traditional thermoelectric pile formula radiation sensor is to photovoltaic solar electricity
The spectrum in pond is insensitive, such as when the infrared light distribution proportion more than 1100nm is bigger, and current thermocouple type radiation sensor
The most corresponding high photovoltaic system generated energy of high radiance measured.Meanwhile, silicon solar cell sheet cost well below
Thermoelectric pile cost, has the biggest prospect on reduced cost.
Current-voltage conversion circuit figure as shown in Figure 2, bridges a resistance at operational amplifier end of oppisite phase and outfan, simultaneously
Shunt-wound capacitance, the current flowing resistance of silicon solar cell, output voltage.The electric current that single piece of silicon solar cell sensor produces passes through
After current-voltage conversion circuit, current signal being converted into voltage signal, meanwhile, this circuit introduces noise signal.
The current I flows through resistor R of single piece of silicon solar cell sensorfOutput voltage V0, the noise voltage density of resistance is:
Wherein, K is constant, and T is temperature, and B is noise bandwidth.
Signal to noise ratio:
Along with resistance RfIncreasing, the closed-loop bandwidth of amplifier can decline, seeking balance between closed-loop bandwidth and signal to noise ratio snr,
Add electric capacity C0, the closed-loop bandwidth of amplifier can be limited, reduce high-frequency noise.
The open-circuit voltage of single piece of silicon solar cell piece is typically in mV rank, for the voltage signal of mV, μ V order of magnitude,
These weak signals are all difficult to directly be observed, and are not easy to by computer acquisition and process, and actuator more can not be driven to realize certainly
Dynamic control.Therefore, it is necessary to weak signal is carried out pretreatment by voltage amplifier circuit, it is allowed to the electricity met required by subsequent conditioning circuit
Amount.Being illustrated in figure 3 light current pressure signal amplification circuit circuit diagram, its basic structure is symmetrical above and below, i.e. R1=R2, R3=R4 in figure,
R5=R6, by regulation RGCan change the closed loop gain of amplifier, operational amplifier A 1 and A2 uses identical computing to put
Big device then output voltage and drift voltage are equal, after A3 difference is put, will be cancelled out each other.This circuit can provide two inputs
The high impedance of coupling so that input source impedance affects minimum to the common mode inhibition of circuit.Operational amplifier A 1 and A2 is used for delaying
Rushing input voltage, operational amplifier A 3 constitutes differential amplifier circuit.The electric current I of solar cell sensor is flowed by single piece of silicon simultaneously
Cross resistance RfOutput voltage V0It is delivered to ui1、ui2Be connected ground connection with '+' wiring section of operational amplifier A 0,
Then voltage V0U is become after voltage amplifier circuit amplifies0:
Make R1=R2, R3=R4, R5=R6, then u0For:
u0=(ui2-ui1)(1+2R5/RG)(R3/R1),
Whole circuit has good common mode inhibition capacity, the least input offset voltage and higher differential mode voltage gain.
When weak voltage signal is through voltage amplifier circuit, and noise signal therein also can be exaggerated therewith, thus final for improving
Data accuracy, needs to add filter circuit.RC active analog wave filter is most commonly used that for sensor signal filtering, by
Amplifier and resistance capacitance are constituted, simple in construction, low cost.The output of silicon solar cell sheet for unidirectional current, although along with sun spoke
Its current/voltage frequency of change according to intensity can change, but its frequency is relatively low, selects low pass filter here.Such as figure
Second-order low-pass filter circuit diagram shown in 4, in order to make output voltage decline at faster speed at high band, improves low pass filter
Filter the ability of noise, have selected second-order low-pass filter here.Capacitance selection same capacitance resistance combination, i.e. R7 with
R8 resistance etc., R9 with R10 resistance is equal, C1 with C2 electric capacity is equal, and the cut-off frequency of wave filter can pass through formulaSuitable resistance and capacitance size is selected according to signal frequency.
Be illustrated in figure 5 typical case's a/d converter connection, according to actual requirement, to the precision of a/d converter, number of significant digit,
First signal to noise ratio and conversion speed should pay attention to.Solar irradiation is measured, because the record time is short, to a/d converter
Require higher.On market, the kind of a/d converter is a lot, is only permitted to select according to actual needs to meet the a/d converter required i.e.
Can.Diagram a/d converter, CS is first low level, and WR sets low subsequently, through after a period of time, is drawn high by WR level,
A/d converter is i.e. activated subsequently, complete after 1 to 8 AD clock cycle add 1 single-chip microcomputer internal clock cycles
Becoming AD conversion, transformation result is stored in data latches, and INTR automatically becomes low level, this conversion of notice single-chip microcomputer simultaneously
Terminate.
Single-chip microcomputer is as final data receiving terminal and controls end, it is necessary to have high reliability and stability.It is able to programme as one
The microprocessor controlled, single-chip microcomputer itself can not be applied individually on a certain engineering or product, and it outer have to enclose digital device
Or the coordination of analog device just can play himself powerful function.Select the single-chip microcomputer of different performance according to actual needs such as
Atmel, stc, pic, avr etc..Here say as a example by typical 8051 single-chip microcomputers and tell single-chip microcomputer basic function.Such as Fig. 6 institute
Show 8051 single-chip microcomputer schematic diagrams, single-chip microcomputers based on 8051 kernels, if number of pins is identical or encapsulates identical, their pin merit
Can communicate, wherein most are 51 single-chip microcomputers of 40 foot DIP encapsulation, also have 20,28,32,44 grades different
51 single-chip microcomputers of pin.VCC (40 foot), GND (20 foot): microcontroller power supply pin.XTAL1 (19 foot), XTAL2
(18 foot): external clock pin.RST (9 foot): the reset pin of single-chip microcomputer.PSEN (29 foot): program storage is permitted
Permitted output control terminal.ALE/PROG (30 pin): when single-chip microcomputer extension external RAM, ALE is used for controlling P0
Latches is sent in the least-significant byte address of mouth, it is achieved status address and the isolation of data.EA/VPP (31 pin): EA
When connecing high level, single-chip microcomputer reads internal program memory.When EA connects low level, single-chip microcomputer directly reads outside (ROM).
I/O mouth pin: P0 mouth, P1 mouth, P2 mouth and P3 mouth, P0 mouth (39 to 32 foot): two-way 8 tri-state I/O mouths, often
Individual mouth can independently control, the internal pull-up resistor useless of P0 mouth, for high-impedance state, so high/low level can not be normally input,
Need additional pull-up resistor.P1 mouth (1 to 8 foot): accurate two-way 8 I/O mouths, each mouth can independently control, on interior band
Pull-up resistor, the output of this connection does not has high-impedance state, and input can not be latched, and is not the most real two-way I/O mouth, is entering
Needing to write this mouth 1 operation before row write operation, then single-chip microcomputer just can be read correctly external signal.P2 mouth and P3
Mouth function is similar to P1 mouth.Additionally, P3.0 the second function is RXD serial input mouth；P3.1 mouth the second function is TXD string
Row delivery outlet；P3.2 the second function is INTO external interrupt 0；P3.3 the second function is INT1 external interrupt 1；P3.4
Two functions are T0 timer/counter 0 external input terminals；P3.5 the second function is T1 timer/counter external input terminals；
P3.6 the second function is WR external data memory write pulse；P3.7 the second function is RD external data memory read pulse.
The above is only the preferred embodiment of the present invention, it is noted that for those skilled in the art,
On the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and deformation, these improve and deformation also should be regarded as
Protection scope of the present invention.
Claims (4)
1. irradiation based on a silicon solar cell test circuit, it is characterised in that include single piece of silicon solar cell sensor, current-voltage conversion circuit, voltage amplifier circuit, filter circuit, a/d converter and single-chip microcomputer；Described single piece of silicon solar cell sensor produces current signal after sunlight, current signal is converted into voltage analog through current-voltage conversion circuit, voltage analog produces the voltage signal of amplification after voltage amplifier circuit, the voltage signal amplified eliminates the noise signal being exaggerated through voltage amplifier circuit through voltage filtering circuit, the voltage signal of the amplification after after filtering sends into a/d converter, producing corresponding digital quantity, digital quantity is fed to chip microcontroller and to the measuring and calculating of irradiation and exports.
A kind of irradiation based on silicon solar cell the most according to claim 1 test circuit, it is characterized in that, the structure of described current-voltage conversion circuit is, a resistance is bridged at operational amplifier end of oppisite phase and outfan, shunt-wound capacitance simultaneously, the current flowing resistance of silicon solar cell, output voltage.
A kind of irradiation based on silicon solar cell the most according to claim 1 test circuit, it is characterized in that, described voltage amplifier circuit uses structure symmetrical above and below, input voltage is buffered by identical operational amplifier A 1 and A2, constitute differential amplifier circuit by operational amplifier A 3, changed the closed loop gain of voltage amplifier circuit by regulation resistance.
A kind of irradiation based on silicon solar cell the most according to claim 1 test circuit, it is characterised in that described filter circuit uses second-order low-pass filter circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610302514.1A CN105841809B (en) | 2016-05-09 | 2016-05-09 | A kind of irradiation test circuit based on silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610302514.1A CN105841809B (en) | 2016-05-09 | 2016-05-09 | A kind of irradiation test circuit based on silicon solar cell |
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| Publication Number | Publication Date |
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| CN105841809A true CN105841809A (en) | 2016-08-10 |
| CN105841809B CN105841809B (en) | 2017-11-17 |
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| CN201610302514.1A Expired - Fee Related CN105841809B (en) | 2016-05-09 | 2016-05-09 | A kind of irradiation test circuit based on silicon solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226357A (en) * | 2016-08-23 | 2016-12-14 | 河海大学常州校区 | A kind of photovoltaic module superficial dust detection device and method |
| CN106595853A (en) * | 2017-01-02 | 2017-04-26 | 南京国电南自新能源工程技术有限公司 | Solar radiation testing method and system thereof |
| CN106787683A (en) * | 2016-11-25 | 2017-05-31 | 厦门思力科电子科技有限公司 | A kind of self-adaptive current voltage conversion circuit |
| CN106771779A (en) * | 2017-01-19 | 2017-05-31 | 深圳市量为科技有限公司 | The lossless screening technique of resistor Radiation hardness and device |
| CN106841968A (en) * | 2017-01-19 | 2017-06-13 | 深圳市量为科技有限公司 | The lossless screening technique of photoelectrical coupler Radiation hardness and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000307140A (en) * | 1999-04-23 | 2000-11-02 | Matsushita Electric Works Ltd | Solar battery illuminance sensor |
| CN104020787A (en) * | 2014-06-14 | 2014-09-03 | 马根昌 | Optical energy tracking device |
| CN204882703U (en) * | 2015-07-07 | 2015-12-16 | 九江精密测试技术研究所 | Faint current signal detection device of silicon photocell |
-
2016
- 2016-05-09 CN CN201610302514.1A patent/CN105841809B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000307140A (en) * | 1999-04-23 | 2000-11-02 | Matsushita Electric Works Ltd | Solar battery illuminance sensor |
| CN104020787A (en) * | 2014-06-14 | 2014-09-03 | 马根昌 | Optical energy tracking device |
| CN204882703U (en) * | 2015-07-07 | 2015-12-16 | 九江精密测试技术研究所 | Faint current signal detection device of silicon photocell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226357A (en) * | 2016-08-23 | 2016-12-14 | 河海大学常州校区 | A kind of photovoltaic module superficial dust detection device and method |
| CN106787683A (en) * | 2016-11-25 | 2017-05-31 | 厦门思力科电子科技有限公司 | A kind of self-adaptive current voltage conversion circuit |
| CN106595853A (en) * | 2017-01-02 | 2017-04-26 | 南京国电南自新能源工程技术有限公司 | Solar radiation testing method and system thereof |
| CN106771779A (en) * | 2017-01-19 | 2017-05-31 | 深圳市量为科技有限公司 | The lossless screening technique of resistor Radiation hardness and device |
| CN106841968A (en) * | 2017-01-19 | 2017-06-13 | 深圳市量为科技有限公司 | The lossless screening technique of photoelectrical coupler Radiation hardness and device |
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