CN105826478B - Light emitting element - Google Patents
Light emitting element Download PDFInfo
- Publication number
- CN105826478B CN105826478B CN201510371554.7A CN201510371554A CN105826478B CN 105826478 B CN105826478 B CN 105826478B CN 201510371554 A CN201510371554 A CN 201510371554A CN 105826478 B CN105826478 B CN 105826478B
- Authority
- CN
- China
- Prior art keywords
- metal
- layer
- light
- metal layer
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 604
- 239000002184 metal Substances 0.000 claims abstract description 604
- 239000000463 material Substances 0.000 claims abstract description 124
- 239000011368 organic material Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000008878 coupling Effects 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 230000003993 interaction Effects 0.000 claims abstract description 6
- 230000005525 hole transport Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 513
- 238000006073 displacement reaction Methods 0.000 claims description 60
- 238000002347 injection Methods 0.000 claims description 44
- 239000007924 injection Substances 0.000 claims description 44
- 239000010931 gold Substances 0.000 claims description 34
- 229910052737 gold Inorganic materials 0.000 claims description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 18
- 230000000737 periodic effect Effects 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 6
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 6
- 229920001621 AMOLED Polymers 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 4
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 4
- XOYZGLGJSAZOAG-UHFFFAOYSA-N 1-n,1-n,4-n-triphenyl-4-n-[4-[4-(n-[4-(n-phenylanilino)phenyl]anilino)phenyl]phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 XOYZGLGJSAZOAG-UHFFFAOYSA-N 0.000 description 3
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 3
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 3
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- HWQQCFPHXPNXHC-UHFFFAOYSA-N 6-[(4,6-dichloro-1,3,5-triazin-2-yl)amino]-3',6'-dihydroxyspiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound C=1C(O)=CC=C2C=1OC1=CC(O)=CC=C1C2(C1=CC=2)OC(=O)C1=CC=2NC1=NC(Cl)=NC(Cl)=N1 HWQQCFPHXPNXHC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- RKVIAZWOECXCCM-UHFFFAOYSA-N 2-carbazol-9-yl-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 RKVIAZWOECXCCM-UHFFFAOYSA-N 0.000 description 1
- XIVCFIYEIZBYMX-UHFFFAOYSA-N 4,6-bis(3,5-dipyridin-3-ylphenyl)-2-methylpyrimidine Chemical compound N=1C(C)=NC(C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=NC=CC=2)=CC=1C(C=1)=CC(C=2C=NC=CC=2)=CC=1C1=CC=CN=C1 XIVCFIYEIZBYMX-UHFFFAOYSA-N 0.000 description 1
- 241000675108 Citrus tangerina Species 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- -1 diphenyl-amino Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- JUOOLRVDHMWLDC-UHFFFAOYSA-N n-(4-fluorophenyl)-4-methyl-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(F)=CC=1)C1=CC=C(C)C=C1 JUOOLRVDHMWLDC-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A light-emitting device is disclosed, which comprises a substrate, a first metal layer and a second metal layer sequentially formed on the substrate, and an organic material layer formed between the first metal layer and the second metal layer, wherein the first metal layer has a uniform thickness or comprises a plurality of metal parts or further comprises an opening part exposing part of the substrate surface, the organic material layer comprises a hole transport material and an electron transport material which are in contact with each other to generate an exciplex capable of emitting light with a peak wavelength in a first range through interaction, plasma coupling can occur between the first metal layer and the second metal layer which are spaced apart from the organic material layer, and the peak wavelength of the light can be shifted to a second range and/or a third range by adjusting the thickness of the first metal layer or the distance between the first metal layer and the second metal layer.
Description
Technical field
This case is related to a kind of light-emitting component, espespecially a kind of organic illuminating element.
Background technology
Generally a light emitting diode (Light-Emitting Diode；LED semi-conducting material) is used, passes through the modes such as doping
These materials is turned into p-type and n-type, then they be bonded together to form pn junctions, then electronics and hole can respectively from n-type and
P-type material injects, and when electronics and hole are met and when combining, it can be given off energy in the form of photon.
Organic Light Emitting Diode (Organic Light-Emitting Diode；OLED it is) then to use organic material.Have
The luminescence process of machine light emitting diode approximately as：Apply a forward bias, make electronics and hole is overcome after the energy barrier of interface respectively
Injected by negative electrode and anode, under electric field action, electronics moves towards with hole and forms exciton in luminescent layer, last electronics and
Hole combines in luminescent layer, and exciton annihilation simultaneously releases luminous energy.In addition, object fluorescent/phosphorescent luminescent material is adulterated in luminescent layer
OLED luminous efficiency and service life can be improved.
In recent years, OLED red, green or blue emitting material luminous efficiency and service life had obvious progress, especially
It is green luminescent material, only blue emitting material then falls behind relatively, although wherein blue phosphor materials efficiency can accomplish
20.4cd/A, but its life-span only have hundreds of hours.
Therefore, foregoing problems how are overcome, such as without using blue-fluorescence/phosphorescent guest luminescent material, and develop height
Efficiency OLED element, for crucial subject under discussion in the market.
The content of the invention
This case proposes a kind of light-emitting component, not including luminescent layer, only by hole mobile material in organic material layer and electronics
Transmission material interacts to produce the exciplex that can be emitted beam, and thereby reduces cost of manufacture and process.
The light-emitting component of this case includes：Substrate；The first metal layer, it is formed on the substrate；Second metal layer, it is formed
Above the first metal layer；And organic material layer, it is formed between the first metal layer and the second metal layer and wrapped
Include the hole mobile material and electron transport material to contact with each other；Wherein, the hole mobile material and the electron transport material phase
Interaction can send the exciplex for the light that peak wavelength is located at the first scope to produce, and the first metal layer with this
Plasmon coupling is produced between two metal levels so that the peak wavelength displacement of the light, and adjust the first metal layer with this
The thickness of the distance between two metal levels or the first metal layer, so that the peak value ripple of the light is moved to the second scope or the 3rd
Scope.
This case proposes another light-emitting component, and it includes：Substrate, it has a surface；The first metal layer, it is formed at this
On substrate and with the first metal portion, the second metal portion and between first metal portion and the second metal portion and exposed part
The opening portion on the surface；Second metal layer, it is formed above the first metal layer；And organic material layer, it is formed at this
Between the first metal layer and the second metal layer and cover first metal portion, the second metal portion and exposed by the opening portion
The partly surface, the organic material layer and hole mobile material and electron transport material including contacting with each other；Wherein, the hole
Transmission material interacts with the electron transport material and produces the sharp base that can send the light that peak wavelength is located at the first scope
Compound, and first metal portion and the second metal layer produce the first plasmon coupling so that the light peak wavelength from
For first range displacement to the second scope, second metal portion produces the second plasmon coupling so that should with the second metal layer
The peak wavelength of light is from first range displacement to the 3rd scope.
A kind of light-emitting component, it is characterized in that, the light-emitting component includes：Substrate；The first metal layer, it is formed in the substrate
On；Second metal layer, it is formed above the first metal layer；3rd metal level, it is formed above the second metal layer；The
Four metal levels, it is formed at the 3rd metal layer；First organic material layer, its be formed at the first metal layer with this second
Between metal level；Second organic material layer, it is formed between the second metal layer and the 3rd metal level；And the 3rd is organic
Material layer, it is formed between the 3rd metal level and the 4th metal level；Wherein, first organic material layer, this second has
Machine material layer, the 3rd organic material layer each include the hole mobile material and electron transport material to contact with each other, and the sky
Hole transport materials can send peak wavelength with exciplex caused by electron transport material interaction and be located at the first model
The light enclosed, so that first organic material layer, second organic material layer, the 3rd organic material layer each send first
Light, the second light, the peak wavelength of the 3rd light are all in the range of first, between the second metal layer and the 3rd metal level
The second plasmon coupling is produced so that the peak wavelength of second light is from first range displacement to the second scope, and this
Produced between three metal levels and the 4th metal level three plasma body couple so that the 3rd light peak wavelength from this
One range displacement to the 3rd scope.
This case proposes another light-emitting component, and it includes multiple pixels, and respectively the pixel includes：Substrate, it has a surface；
The first metal layer, it is formed on the substrate；Second metal layer, it is formed above the first metal layer；And organic material
Layer, it is formed between the first metal layer and the second metal layer and the hole mobile material including contacting with each other and electronics pass
Defeated material, and the hole mobile material and the electron transport material interact and can send peak wavelength to produce and be located at the first model
The exciplex of the light enclosed, and the first metal layer across the organic material layer produces plasma with the second metal layer
Body couples the peak wavelength displacement for causing the light；Wherein, respectively the pixel for it is following one of them：The first metal layer covers completely
The surface is covered, the thickness by adjusting the first metal layer is smaller or distance between the first metal layer and the second metal layer is got over
Greatly so that the peak wavelength of the light is from first range displacement to second scope, or, by adjusting the first metal layer
Thickness is bigger or distance between the first metal layer and the second metal layer is smaller so that the light peak wavelength from this
One range displacement to the 3rd scope；The first metal layer have cover the substrate the part surface metal portion and it is exposed should
The opening portion on the remaining surface of substrate, the thickness by adjusting the metal portion is smaller or the metal portion and the second metal layer between
Distance it is bigger so that the peak wavelength of the light is from first range displacement to second scope, or, by adjusting the gold
The thickness in category portion is bigger or distance between the metal portion and the second metal layer is smaller so that the light peak wavelength from this
One range displacement to the 3rd scope；The first metal layer has the first metal portion and the second metal portion for covering the surface, leads to
Cross adjust first metal portion thickness it is smaller or distance between first metal portion and the second metal layer is bigger so that the light
The peak wavelength of line from first range displacement to second scope, the thickness by adjusting second metal portion it is bigger or this
Distance between two metal portions and the second metal layer it is smaller so that the light peak wavelength from first range displacement to this
Three scopes；And the first metal layer has the first metal portion, the second metal portion and between first metal portion and the second metal
The opening portion on the exposed parts surface between portion, the thickness by adjusting first metal portion is smaller or first metal portion is with being somebody's turn to do
Distance between second metal layer is bigger so that the peak wavelength of the light passes through tune from first range displacement to second scope
The thickness of whole second metal portion is bigger or distance between second metal portion and the second metal layer is smaller so that the light
Peak wavelength is from first range displacement to the 3rd scope.
Brief description of the drawings
Figure 1A and Figure 1B is the schematic diagram of an embodiment of the light-emitting component of this case；
Fig. 2A to Fig. 2 C is the schematic diagram of another embodiment of the light-emitting component of this case；
Fig. 3 A to Fig. 3 C are the schematic diagram of the another embodiment of the light-emitting component of this case；
Fig. 4 is the schematic diagram of the another embodiment of the light-emitting component of this case；
Fig. 5 A and Fig. 5 B are red shift and the blue shift schematic diagram of Figure 1A light-emitting component；
Fig. 6 A and Fig. 6 B are red shift and the blue shift schematic diagram of Figure 1B light-emitting component；
Fig. 7 is the schematic diagram of the periodic structure included by the light-emitting component of this case；
Fig. 8 A and Fig. 8 B are the periodic structure of light-emitting component and the graph of relation of applicable wavelengths of this case；
Fig. 9 A and Fig. 9 B are the schematic diagram of the Application Example of the light-emitting component of this case；And
Figure 10 is the schematic diagram of the another embodiment of the light-emitting component of this case.
Wherein, reference：
100th, 200,300,400,500 light-emitting component
10th, 201 pixel
201s sub-pixels
2 substrates
21 surfaces
3rd, 3 ', 3 ", 3a the first metal layers
30 periodic structures
31 first metal portions
32 second metal portions
33 opening portions
The organic material layers of 4a first
The organic material layers of 4b second
The organic material layers of 4c the 3rd
41st, 43 carrier injections/transport layer
42 organic material layers
421 hole transmission layers
422 electron transfer layers
5 second metal layers
6 negative electrodes
61 the first metal layers
62 second metal layers
63 the 3rd metal levels
64 the 4th metal levels
7 anodes
8 thin film transistor (TFT)s
D1Distance (thickness)
D1-g、D1-r、D1-bDistance
D2、D3、D2-r、D2-b、D2-gThickness
W sizes
The Λ cycles.
Embodiment
Illustrate the embodiment of this case by specific embodiment below, those skilled in the art can be taken off by this paper
The content shown understands other advantages and effect of this case easily.Structure, ratio, size depicted in this specification institute accompanying drawings
It is non-to be used to limit for the understanding and reading of people skilled in the art Deng being only used for coordinating the content disclosed in specification
The enforceable qualifications of this case, thus it is any modification, be altered or modified, do not influenceing the effect of this case can be generated and can reach
Into purpose under, all should still fall in the range of the technology contents disclosed in this case are obtained and can covered.
Figure 1A and Figure 1B is referred to, the light-emitting component 100 of this case includes the substrate 2, the first metal layer 3, load sequentially stacked
Sub- injection/transport layer 41, organic material layer 42, carrier injection/transport layer 43 and second metal layer 5.
The material of substrate 2 can be glass, plastic cement or conducting metal oxide, such as tin indium oxide (indium tin
oxide；) or indium zinc oxide (indium zinc oxide ITO；IZO), can make when substrate 2 is ITO or IZO as anode
With.
In the present embodiment, the first metal layer 3 is formed on substrate 2 fully to cover substrate 2, so-called herein " complete
Ground " refers to the surface of no exposed substrate 2.The material of the first metal layer 3 can be metal (such as aluminium or its close gold, silver or its alloy,
Gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or nano-metal-oxide, such as BCP/V2O5、MoO3、
ZnS/Ag/ZnO/Ag、ZnPc/C60, separately may include nano metal line.The first metal layer can also be used as electrode, such as anode or the moon
Pole.In addition, as illustrated in figures 1A and ib, the first metal layer 3 has thickness D2, about 5nm-20nm.
Carrier injection/transport layer 41 is formed on the first metal layer 3.When substrate 2 or the first metal layer 3 as anode and the
When two metal levels 5 are as negative electrode, carrier injection/transport layer 41 is hole injection/transport layer；Conversely, work as the metal of substrate 2 or first
Layer 3 as negative electrodes and second metal layer 5 as anode when, carrier injection/transport layer 41 is electron injection/transport layer.
Organic material layer 42 is formed in carrier injection/transport layer 41, and the hole mobile material including contacting with each other and
Electron transport material.As shown in Figure 1A, organic material layer 42 is the mixing for being mixed with hole mobile material and electron transport material
Layer；As shown in Figure 1B, organic material layer 42 includes the hole transmission layer 421 being made up of hole mobile material and contacts and set
In the electron transfer layer 422 being made up of on hole transmission layer 421 electron transport material.When carrier injection/transport layer 41 is sky
During cave injection/transport layer, hole transmission layer 421 also can be considered neighbouring the first metal layer 3 adjacent to the hole injection/transport layer, and
The neighbouring carrier injection/transport layer 43 as electron injection/transport layer of electron transfer layer 422, it also can be considered neighbouring second metal
Layer 5.
In the present embodiment, double (nitrogen-carbazyl) phenyl (1, the 3-bis (N- of hole mobile material such as 1,3-
carbazolyl)benzene；MCP), 4,49,40- tri- (nitrogen-carbazyl) triphenylamine (4,49,40-tri (N-carbazolyl)
triphenylamine；TCTA), [4- (two-p-methylphenyl) aminophenyl] fluorine of 9,9- bis- (9,9-di [4- (di-p-tolyl)
aminophenyl]fluorine；DTAF), double [(two -4- Tolylaminos) phenyl] hexamethylene (1,1-bis [(di-4- of 1,1-
tolylamino)phenyl]cyclohexane；) or N, N'- diphenyl-N, N- bis- TAPC-[4- (N, N ' diphenyl-amino)
Phenyl] and benzidine (N, N '-diphenyl-N, N '-di- [4- (N, Ndiphenyl-amino) phenyl] benzidine；
NPNPB), its structure is respectively as shown in formula (1)-(5).
Double (3,5- bis- (3- pyridines) base the phenyl) -2- methylpyrimidines (4,6- of electron transport material such as PO-T2T or 4,6-
Bis(3,5-di(pyridin-3-yl)phenyl)-2-MethylpyriMidine；B3PYMPM), its structure is respectively such as formula
(6) shown in-(7).
It should be noted that hole mobile material can interact with electron transport material produces exciplex
(exciplex) it, can produce to send using the PO-T2T materials hole mobile material different as electron transport material collocation and not share the same light
The exciplex of color.For example, PO-T2T/mCP can send blue light (its peak wavelength is about in 380nm-495nm), PO-T2T/
TCTA can send green glow (its peak wavelength is about in 495nm-570nm), PO-T2T/DTAF can send gold-tinted (its peak wavelength is about
In 570nm-590nm), PO-T2T/TAPC can send tangerine light (its peak wavelength is about in 590nm-620nm), PO-T2T/NPNPB
Feux rouges can be sent (its peak wavelength is about in 570nm-750nm).
Carrier injection/transport layer 43 is formed on organic material layer 42.When substrate 2 or the first metal layer 3 as anode and
When second metal layer 5 is as negative electrode, carrier injection/transport layer 43 is electron injection/transport layer；Conversely, work as the gold medal of substrate 2 or first
Belong to layer 3 as negative electrode and second metal layer 5 as anode when, carrier injection/transport layer 43 is hole injection/transport layer.In addition,
As illustrated in figures 1A and ib, carrier injection/transport layer 41, organic material layer 42 and carrier injection/stacking for transport layer 43 have
Thickness D1, about 75nm-150nm, and adjust carrier injection/transport layer 41, organic material layer 42 and carrier injection/transport layer 43 and appoint
One layer of thickness can change the distance D between the first metal layer 3 and second metal layer 51。
Second metal layer 5 is formed in carrier injection/transport layer 43, so that organic material layer 42 is between the first metal layer 3
Between second metal layer 5, then distance between the first metal layer 3 and second metal layer 5 is set to have D1.The material of second metal layer 5
Can be metal (such as aluminium or its close gold, silver or its alloy, gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or
Nano-metal-oxide, such as BCP/V2O5、MoO3、ZnS/Ag/ZnO/Ag、ZnPc/C60, used usually as negative electrode.In addition,
As illustrated in figures 1A and ib, second metal layer 5 has thickness D3, about more than 20nm.
When applying a voltage jump between second metal layer 5 and the first metal layer 3 or substrate 2, organic material layer 42
In hole mobile material and electron transport material can interact to produce the exciplex that can be emitted beam, now pass through
Coupling between the first metal layer 3 and second metal layer 5, i.e. plasmon coupling (plasmon coupling) effect, can make
The peak wavelength displacement for the light that the exciplex is sent, such as (claim red shift, red toward longer wavelengths of direction displacement
Shift) or toward the shorter direction displacement of wavelength (blue shift, blue shift).Therefore, the metal of the first metal layer 3 and second is adjusted
The distance between 5 D of layer1Or the thickness D of the first metal layer 32The peak wavelength red shift for the light that organic material layer 42 sent can be made
Or different wave bands is blue shifted to, for example, from green light band (its peak wavelength is about in 495nm-570nm) red shift to red spectral band
(its peak wavelength is about in 570nm-750nm), or from red spectral band (its peak wavelength is about in 570nm-750nm) red shift near red
Outer optical band (its peak wavelength is approximately less than 1240nm)；Or blue wave band is blue shifted to by green light band (its peak wavelength about exists
380nm-495nm)。
Referring next to Fig. 2A to Fig. 2 C, the light-emitting component 100 shown in light-emitting component 200 and Figure 1A to Figure 1B of the present embodiment
Difference be only that, the first metal layer 3 ' include be covered in substrate 2 surface the first metal portion 31 and the second metal portion 32.When
So, organic material layer 42 also includes the hole mobile material and electron transport material to contact with each other as shown in figure 1 a or figure 1b.
The thickness D of first metal portion 312-rAdjusted and between the first metal portion 31 and second metal layer 5 between 5nm-20nm
Distance D1-rAdjusted between 75nm-150nm so that the peak wavelength for the light that organic material layer 42 is sent is from first model
Enclose and be moved to second scope (it is, red shift to longer peak wavelength)；The thickness D of second metal portion 322-bIn 5nm-
Adjustment and the distance D between the second metal portion 32 and second metal layer 5 between 20nm1-bAdjustment is so as to have between 75nm-150nm
The peak wavelength for the light that machine material layer 42 is sent from first range displacement to the 3rd scope (it is, be blue shifted to compared with
Short peak wavelength), and wherein, the thickness D of the second metal portion 322-bMore than the thickness D of the first metal portion 312-rOr second metal
Distance D between portion 32 and second metal layer 51-bLess than the distance D between the first metal portion 31 and second metal layer 51-r.Thereby, send out
Optical element 200 can be simultaneously emitted by the light of two kinds of different-wavebands.Or also can by the first metal portion 31 and the second metal portion 32 its
Middle one is substituted for opening portion (not giving schema), then light-emitting component 200 can send light caused by the exciplex originally
Light after line and red shift or blue shift.
In addition, the thickness D of the first metal portion 31 of adjustment2-rOr first the distance between metal portion 31 and second metal layer 5
D1-rThe numerical value of second scope can be changed.Adjust the thickness D of the second metal portion 322-bOr second metal portion 32 and second metal layer
The distance between 5 D1-bThe numerical value of the 3rd scope can be changed.As shown in Figure 2 A, the thickness D of the first metal portion 312-rWith the second gold medal
The thickness D in category portion 322-bDiffer, and the distance D between the first metal portion 31 and second metal layer 51-rAnd second metal portion 32
Distance D between second metal layer 51-bIt is identical, it is, carrier injection/transport layer 41, organic material layer 42 and carrier injection/
Identical, the integral thickness D of second metal layer 5 that stacks integral thickness of transport layer 433It is identical.As shown in fig. 2 b and fig. 2 c, the first gold medal
The thickness D in category portion 312-rWith the thickness D of the second metal portion 322-bIt is identical, and between the first metal portion 31 and second metal layer 5
Distance D1-rAnd second the distance between metal portion 32 and second metal layer 5 D1-bDiffer；Wherein, Fig. 2 B are mainly with organic material
The bed of material 42 adjusts the distance between the first metal portion 31 and second metal layer 5 D1-rAnd second metal portion 32 and the second metal
The distance between 5 D of layer1-b, and carrier injection/thickness of transport layer 41 is integrally identical, the thickness entirety phase of carrier injection/transport layer 43
Together, the thickness D of second metal layer 53It is overall identical；Separately wherein, Fig. 2 C mainly inject/the first metal portion of adjustment of transport layer 41 with carrier
The distance between 31 and second metal layer 5 D1-rAnd second the distance between metal portion 32 and second metal layer 5 D1-b, and it is organic
The integral thickness of material layer 42 is identical, carrier injection/transport layer 43, the thickness D of second metal layer 53It is overall identical.Also, it can also carry
Sub- injection/transport layer 43 adjusts the distance between the first metal portion 31 and second metal layer 5 D1-rAnd second metal portion 32 and
The distance between two metal levels 5 D1-b。
Referring next to Fig. 3 A to Fig. 3 C, the light-emitting component 100 shown in light-emitting component 300 and Figure 1A to Figure 1B of the present embodiment
Difference be only that the first metal layer 3 " can be patterned metal layer or grid-shaped metal layer, and it includes the table for being covered in substrate 2
First metal portion 31, the second metal portion 32 and the exposed parts table between the first metal portion 31 and the second metal portion 32 in face 21
The opening portion 33 in face 21.Certainly, organic material layer 42 also includes the hole mobile material to contact with each other as shown in figure 1 a or figure 1b
With electron transport material.
In light-emitting component 300, hole mobile material in organic material layer 42 and electron transport material interact with
The exciplex that can be emitted beam is produced, and the peak wavelength (peak wavelength) of the light is in the first scope.This
Outside, first is produced between the first metal portion 31 and second metal layer 5 to couple, that is, plasmon coupling (plasmon
Coupling) effect so that (such as red shift is to longer from first range displacement to the second scope for the peak wavelength of the light
Peak wavelength).In addition, produce the second plasmon coupling between the second metal portion 32 and second metal layer 5 so that the peak of light
Value wavelength is from first range displacement to the 3rd scope (such as being blue shifted to shorter peak wavelength).
It should be noted that the light for (isotropic), when second metal layer 5 has reflecting effect, peak value ripple
The light grown in the first scope can be passed from opening portion 33 to leave the light-emitting component 300, light of the peak wavelength in the second scope
Line may pass through the first metal portion 31 to leave light-emitting component 300, and peak wavelength may pass through the second metal in the light of the 3rd scope
Portion 32 is to leave light-emitting component 300；When second metal layer 5 for it is transparent when, foregoing peak wavelength the first scope, the second scope and
The light of 3rd scope can also penetrate through second metal layer 5 to leave light-emitting component 300.
Adjust the thickness D of the first metal portion 312-rOr first the distance between metal portion 31 and second metal layer 5 D1-rIt can change
Become the numerical value of second scope.Adjust the thickness D of the second metal portion 322-bOr second between metal portion 32 and second metal layer 5
Distance D1-bThe numerical value of the 3rd scope can be changed.As shown in Figure 3A, the thickness D of the first metal portion 312-rWith the second metal portion 32
Thickness D2-bDiffer, and the distance D between the first metal portion 31 and second metal layer 51-r, the second metal portion 32 and the second metal
Distance D between layer 51-bAnd corresponding to the distance D between the substrate 2 and second metal layer 5 of opening portion 331-gIt is identical, it is, carrying
Sub- injection/transport layer 41, identical, the second metal layer 5 that stacks integral thickness of organic material layer 42 and carrier injection/transport layer 43
Integral thickness D3It is identical.As shown in Fig. 3 B and Fig. 3 C, the thickness D of the first metal portion 312-rWith the thickness D of the second metal portion 322-b
It is identical, and the distance between the first metal portion 31 and second metal layer 5 D1-rAnd second metal portion 32 and second metal layer 5 it
Between distance D1-bDiffer；Wherein, Fig. 3 B mainly adjust the first metal portion 31 and second metal layer 5 with organic material layer 42
The distance between D1-rAnd second the distance between metal portion 32 and second metal layer 5 D1-b, and carrier injection/transport layer 41 is thick
Degree is overall identical, and carrier injection/thickness of transport layer 43 is integrally identical, the thickness D of second metal layer 53It is overall identical；Separately wherein, figure
3C mainly injects/transport layer 41 adjustment the distance between the first metal portion 31 and second metal layer 5 D with carrier1-rAnd second gold medal
The distance between category portion 32 and second metal layer 5 D1-b, and the integral thickness of organic material layer 42 is identical, carrier injection/transport layer
43, the thickness D of second metal layer 53It is overall identical.Also, can also carrier injection/the first metal portion 31 and second of adjustment of transport layer 43
The distance between metal level 5 D1-rAnd second the distance between metal portion 32 and second metal layer 5 D1-b。
For example, the peak wavelength for the light that exciplex is sent is in 495nm-570nm, the thickness of the first metal portion 31
D2-rAbout 5nm-20nm and its distance between with second metal layer 5 D1-rAbout 75nm-150nm, then the first metal portion 31 and second
The first plasmon coupling can be produced between metal level 5 so that the peak wavelength of the light is moved to 570nm-750nm, and second
The thickness D of metal portion 322-bAbout 5nm-20nm and its distance between with second metal layer 5 D1-bAbout 75nm-150nm, wherein the
The thickness D of two metal portions 322-bMore than the thickness D of the first metal portion 312-rOr second between metal portion 32 and second metal layer 5
Distance D1-bLess than the distance between the first metal portion 31 and second metal layer 5 D1-r, then the second metal portion 32 and the second metal
The second plasmon coupling can be produced so that the peak wavelength of the light is moved to 380nm-495nm (blue wave band) between layer 5.
In another example the peak wavelength for the light that exciplex is sent is in 570nm-750nm, the thickness D of the first metal portion 312-rAbout
5nm-20nm and its distance between with second metal layer 5 D1-rAbout 150nm-1000nm, then the first metal portion 31 and the second metal
The first plasmon coupling can be produced so that the peak wavelength of the light is moved to less than 1240nm between layer 5, and the second metal
The thickness D in portion 322-bAbout 5nm-20nm and its distance between with second metal layer 5 D1-bAbout 30nm-75nm, then the second metal portion
The second plasmon coupling can be produced between 32 and second metal layer 5 so that the peak wavelength of the light is moved to more than 305nm.
Thereby, light-emitting component 300 can send the light of three kinds of different-wavebands, such as feux rouges, green glow and blue light, to be mixed into white light, separately
It is adjusted by the area of the first metal portion 31 and the second metal portion 32 covering substrate 2 surface 21 and the face of the exposed surface of opening portion 33
Product, the ratio of green glow, feux rouges and blue light can be changed.
The structure of the above-mentioned light-emitting component for illustrating this case using Figure 1A-Figure 1B, Fig. 2A-Fig. 2 C and Fig. 3 A- Fig. 3 C, it includes
The substrate 2 that sequentially stacks, the first metal layer 3 (or 3 ' or 3 "), carrier injection/transport layer 41, there is hole mobile material and electricity
Organic material layer 42, carrier injection/transport layer 43 and the second metal layer 3 of sub- transmission material, without including described in prior art
Luminescent layer, wherein, the first metal layer 3 (or 3 ' or 3 ") can be it is following one of them：Substrate 2 is completely covered consistency of thickness
Surface, as illustrated in figs, the light-emitting component 100 formed can send a kind of light of wave band；Including at least two thickness
Interval is had no between the different metal portion 31 and 32 of different or between second metal layer distance and these metal portions 31 and 32, such as
Shown in Fig. 2A-Fig. 2 C, the light-emitting component 200 formed can send the light of two kinds of wave bands；And including at least two metal portions
31 and 32 and between the metal portion surface of exposed parts substrate 2 opening portion 33, as shown in figs. 3 a-3 c, formed
Light-emitting component 300 can send the light of three kinds of wave bands.
Referring to Fig. 4, in the present embodiment, substrate 2 that light-emitting component 400 includes sequentially stacking, the first metal layer 61, the
One organic material layer 4a, second metal layer 62, the second organic material layer 4b, the 3rd metal level 63, the 3rd organic material layer 4c and
4th metal level 64.
The size and material of substrate 2 are identical with the substrate 2 in first embodiment.The first metal layer 61, second metal layer 62,
3rd metal level 63 is identical with the size and material of the first metal layer 3 in first embodiment, such as in 5nm-20nm, can be by gold
Belong to (Al/LiF, Ag/Al/Ag, Ag/Ge/Ag) or nano-metal-oxide (BCP/V2O5、MoO3、ZnS/Ag/ZnO/Ag、ZnPc/
C60) formed.4th metal level 64 is identical with the size and material of the second metal layer 5 in first embodiment using as negative electrode,
Substrate 2 or the one of which of the first metal layer 61 can be used as anode.First organic material layer 4a, the second organic material layer 4b and the 3rd
Organic material layer 4c is identical with the organic material layer 4 in first embodiment, such as green fluorescent Alq3Material, and including phase mutual connection
Tactile hole mobile material and electron transport material.
All there is electric transmission material in first organic material layer 4a, the second organic material layer 4b, the 3rd organic material layer 4c
Material and hole mobile material, and electron transport material and hole mobile material can interact with produce can send peak wavelength position
In the light of the first scope so that the first light that the first organic material layer 4a is sent, the second organic material layer 4b are sent
The second light, the peak wavelengths of the 3rd light that are sent of the 3rd organic material layer 4c are all in the first scope, the first metal layer
61 with second metal layer 62 to make first light produce gain, the is produced between second metal layer 62 and the 3rd metal level 63
Two plasmon couplings so that the peak wavelength of second light from first range displacement to the second scope, the 3rd metal level 63
Three plasma body is produced between the 4th metal level 64 to couple so that the peak wavelength of the 3rd light is from the first scope position
Move to the 3rd scope.In addition, the thickness D of adjustment the first metal layer 612-g, the second metal layer 62 thickness D2-rOr first gold medal
Belong to the distance D between layer 61 and the second metal layer 621-gTo change the gain of first light.Adjust the thickness of second metal layer 62
Spend D2-r, the 3rd metal level 63 thickness D2-bOr the distance D between the metal level 63 of second metal layer 62 and the 3rd1-rWith change this
The numerical value of two scopes.Adjust the thickness D of the 3rd metal level 632-b, the 4th metal level 64 thickness or the 3rd metal level 63 and
Distance D between four metal levels 641-bTo change the numerical value of the 3rd scope.
For example, wave band of the peak wavelength of first, second, third light in 495nm-570nm, wherein second light
495nm-750nm can be covered, the wave band of the 3rd light can cover 380nm-570nm, then through thickness D2-r、D2-bAll in 5nm-
20nm and distance D1-rAfter the second plasmon coupling of the 75nm-150nm metal level 63 of second metal layer 62 and the 3rd,
The peak wavelength of second light is moved to 570nm-750nm, separately through distance D1-bIn 75nm-150nm and it is less than distance D1-r's
After 3rd metal level 63 couples with the three plasma body of the 4th metal level 64, the peak wavelength of the 3rd light is moved to
380nm-495nm.In another example the peak wavelength of first, second, third light is in 570nm-750nm, wherein second light
Wave band can cover 570nm-1240nm, the wave band of the 3rd light can cover 305nm-750nm, then through thickness D2-r、D2-bAll
In 5nm-20nm and distance D1-rIn the second plasma coupling of the 150nm-1000nm metal level 63 of second metal layer 62 and the 3rd
After conjunction, the peak wavelength of second light is moved to less than 1240nm, separately through distance D1-bIn 30nm-75nm and it is less than distance
D1-rThe 3rd metal level 63 coupled with the three plasma body of the 4th metal level 64 after, the peak wavelength position of the 3rd light
Move to and be more than 305nm.Accordingly, light-emitting component 300 can produce the light of green, red and blue three kinds of wave bands, and send by three kinds of wave bands
The white light that is formed of light.
Illustrate the peak wavelength for the light that the thickness of each layer and exciplex sent with table 1-12 further below
Relation.
First, the first metal layer (i.e. its thickness D is not included with Tables 1 and 2 explanation2For 0nm) comparative example with including the
Difference between the experimental example of one metal level.It should be noted that in comparative example 1-4, the material of second metal layer is aluminium；Yu Shi
Test in a 1-4, the material of the first metal layer and second metal layer is all aluminium；In comparative example 1-2 and experimental example 1-2, You Jicai
The bed of material is one layer 1：1 TAPC and B3PYMPM mixed layer；In comparative example 3-4 and experimental example 3-4, organic material layer includes
Parallel one layer of TAPC and one layer of B3PYMPM stacked.In addition, table 1- tables 12 are with D1Represent the first metal layer and second metal layer
Mutual distance, it can also represent D1-r、D1-b；With D2The thickness of the first metal layer is represented, can also represent D2-r、D2-b。
Table 1
| D1(nm) | D2(nm) | Peak wavelength (nm) | Displacement | |
| Comparative example 1 | 100 | 0 | 520 | Before non-displacement |
| Experimental example 1 | 100 | 15 | 497 | Blue shift |
| Comparative example 2 | 130 | 0 | 517 | Before non-displacement |
| Experimental example 2 | 130 | 15 | 572 | Red shift |
Find that comparative example 1 is compared with experimental example 1, as distance D according to table 1 and refering to Fig. 5 A and Fig. 5 B1For 100nm and
One metal layer thickness D2For 0nm when, the peak wavelength of the light is 520nm, as shown in Fig. 5 A block curve；When the first metal
Thickness degree D2For 15nm when, the peak wavelength of the light is then blue shifted to 497nm, as shown in Fig. 5 A dot-dash curve.Comparative example 2 with
Experimental example 2 is compared, as distance D1For 130nm and the first metal layer thickness D2For 0nm when, the peak wavelength of the light is 517nm,
As shown in Fig. 5 B block curve；As the first metal layer thickness D2For 15nm when, then red shift is extremely for the peak wavelength of the light
572nm, as shown in Fig. 5 B dot-dash curve.
Table 2
| D1(nm) | D2(nm) | Peak wavelength (nm) | Displacement | |
| Comparative example 3 | 90 | 0 | 492 | Before non-displacement |
| Experimental example 3 | 90 | 15 | 460 | Blue shift |
| Comparative example 4 | 130 | 0 | 506 | Before non-displacement |
| Experimental example 4 | 130 | 15 | 569 | Red shift |
Find that comparative example 3 is compared with experimental example 3, as distance D according to table 2 and refering to Fig. 6 A and Fig. 6 B1For 90nm and first
Metal layer thickness D2For 0nm when, the peak wavelength of the light is 492nm, as shown in Fig. 6 A block curve；Work as the first metal layer
Thickness D2For 15nm when, the peak wavelength of the light is then blue shifted to 460nm, as shown in Fig. 6 A dot-dash curve.Comparative example 4 and reality
Test example 4 to compare, as distance D1For 130nm and the first metal layer thickness D2For 0nm when, the peak wavelength of the light is 506nm, such as
Shown in Fig. 6 B block curve；As the first metal layer thickness D2For 15nm when, the peak wavelength of the light then red shift to 569nm,
As shown in Fig. 6 B dot-dash curve.
Therefore, table 1-2 and Fig. 5 A- Fig. 6 B are shown, the distance D between the first metal layer and second metal layer1It is bigger, light
Peak wavelength is more toward red spectral band displacement；Distance D between the first metal layer and second metal layer1It is smaller, the peak wavelength of light
More toward blue wave band displacement.Accordingly, the plasmon coupling effect between the first metal layer of this case and second metal layer, can make
The peak wavelength of the light sent by exciplex produces displacement, if the peak wavelength of the light fall the first scope (such as
About 495nm-570nm) and the light cover visible-range, then the plasma coupling effect can make the peak value ripple of the light
Long red shift to the second scope (such as red spectral band, about 570nm-750nm) or be blue shifted to the 3rd scope (such as blue wave band, about
380nm-495nm)。
Then the thickness D for adjusting the first metal layer is illustrated with table 3-122And the first metal layer and second metal layer away from
From D1(namely carrier injection/transport layer, organic material layer and carrier injection/transport layer stack thickness) and the peak value of light
The relation of wavelength.It should be noted that in table 3-5, used electron transport material and hole mobile material are respectively PO-
T2T and TCTA, the peak wavelength for the light that exciplex is sent is about 530nm, and used the first metal layer and
The material of two metal levels is respectively Al/Al, Ag/Ag, Au/Au in table 3-5.And in table 6-9, what exciplex was sent
The peak wavelength of light is about 630nm, such as using PO-T2T and NPNPB respectively as electron transport material and hole transport material
Material, and used the first metal layer and the material of second metal layer in table 6-8 be respectively Al/Al, Ag/Ag, Au/Au, table
6-8 lists to be set with red spectral band (630nm), N (refraction coefficient)/K (dissipation coefficient (extinction coefficient)) value
It is set to the red shift simulation result of 1.75 progress.In table 10-12, the peak wavelength for the light that exciplex is sent about exists
Between 570nm-750nm, and used the first metal layer and the material of second metal layer are respectively Al/Al, Ag/Ag, Au/
Au。
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
| D1(nm) | Peak wavelength (nm) |
| 200 | 500 |
| 500 | 850 |
| 1000 | 1240 |
Table 10
Table 11
Table 12
From table 3-5, the thickness D of the first metal layer2It can be adjusted between 5nm-20nm, the first metal layer and the second gold medal
Belong to the distance between layer D1It can be adjusted between 75nm-150nm.Distance D between the first metal layer and second metal layer1It is bigger, and
The thickness D of the first metal layer2Smaller, the peak wavelength of light is more offset so that light turns into feux rouges toward red spectral band；First gold medal
Belong to the distance D between layer and second metal layer1It is smaller, and the thickness D of the first metal layer2Bigger, the peak wavelength of light is more toward blue light
Band discontinuity is so that light turns into blue light.
From table 6-9, the thickness D of the first metal layer2It can be adjusted between 5nm-20nm, the first metal layer and the second gold medal
Belong to the distance between layer D1Also can be adjusted between 150nm-500nm, or even during 1000nm, the light can be from red spectral band
(570nm-750nm) is moved near infrared band (being approximately less than 1240nm).Especially from as shown in Table 9, when the first metal layer and
The distance D of two metal interlevels1For 200,500 or 1000nm when, light-emitting component can send peak wavelength be located at 500nm, 850nm or
1240nm light.
From table 10-12, the thickness D of the first metal layer2It can be adjusted between 5nm-20nm, the first metal layer and second
The distance between metal level D1Also can be adjusted between 30nm-75nm, the light can be from red spectral band (570nm-750nm) displacement
To near ultraviolet band (being approximately more than 305nm).
In addition, referring to Fig. 7, the metal portion 31 and 32 in light-emitting component 300 may make up multiple periodic structures 30 so that
Peak wavelength produces gain in the light of different range.As shown in fig. 7, the size W of periodic structure 30 40nm-437nm it
Between, periods lambda is between 50nm-965nm.That is, the respective width of metal portion 31 and 32 is all periodic structure 30
Width W, and from the tail end of metal portion 31 to the periods lambda that the tail end of metal portion 32 is periodic structure 30.It should be noted that though
The external form that the periodic structure is shown in right schema is square wave, and only this case is not intended to limit its shape.Thereby, exciplex institute
Caused light or via red shift caused by plasmon coupling effect or the light after blue shift, can pass through and periodically tie
Structure 30 and produce gain.
Table 13-15 is respectively the relation of the periods lambda of Al, Ag and Au periodic structure, size W and applicable wavelengths.
Table 13
| Wavelength (nm) | 340 | 400 | 450 | 500 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 348 | 435 | 507 | 579 | 646 | 714 | 778 | 845 | 910 | 965 |
| Size (nm) | 170 | 208 | 237 | 268 | 298 | 327 | 345 | 383 | 411 | 437 |
Table 14
| Wavelength (nm) | 380 | 400 | 450 | 500 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 50 | 171 | 300 | 392 | 466 | 534 | 596 | 657 | 716 | 773 |
| Size (nm) | 40 | 124 | 189 | 229 | 267 | 300 | 334 | 365 | 398 | 429 |
Table 15
| Wavelength (nm) | 510 | 525 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 62 | 223 | 462 | 462 | 545 | 615 | 680 | 738 |
| Size (nm) | 45 | 157 | 209 | 260 | 299 | 326 | 356 | 382 |
Refering to table 13-15 and Fig. 8 A and Fig. 8 B, wherein, the curve shown in Fig. 8 A and Fig. 8 B from top to bottom represents respectively
Al, Ag and Au, so that material is Al and wavelength 550nm (green glow) as an example, when the periods lambda of the periodic structure 30 is 646nm and chi
When very little W is 298nm, peak wavelength can be made to be located at 550nm light and produce gain.Using material as Ag and wavelength 450nm (blue light)
Exemplified by, when the periods lambda of the periodic structure 30 is 300nm and size W is 189nm, peak wavelength can be made to be located at 450nm
Light produces gain.So that material is Au and wavelength 650nm (feux rouges) as an example, when the periods lambda of the periodic structure 30 is 545nm
And size W can make peak wavelength be located at 650nm light and produce gain when being 299nm, and as seen from Table 15, Au is relatively applicable
In the gain of long wavelength.Therefore, by adjust periodic structure 30 periods lambda and size W can peak wavelength be located at certain ripple
The light of section produces gain.
In addition, above-mentioned light-emitting component 300 can be applied to active-matrix Organic Light Emitting Diode (Active-matrix
organic light-emitting diode；AMOLED) display or passive-matrix Organic Light Emitting Diode (Passive-
matrix organic light-emitting diode；PMOLED) display.Refering to Fig. 9 A, light-emitting component 300 is in Fig. 9 A
Display in be used as a pixel 201, pixel 201 also include R, G, B tri- sub-pixels 201s, each sub-pixel 201s all by
Thin film transistor (TFT) (TFT) 8 is luminous to activate so that pixel 201 can send red, green, blue, and do current control tune using TFT
Whole tri- sub-pixel 201s of R, G, B luminous ratio can more adjust the glow color of each pixel 201 so that displayer energy
Dynamic color gray scale image is presented.Fig. 9 B are seen also, are to activate illumination mode, passive-matrix organic light emission with Fig. 9 A difference
Diode display is to be activated using negative electrode 6 and anode 7 luminous, and remaining feature is identical with Fig. 9 A.
In addition, in other embodiment, the light-emitting component of this case all can change speech as one of pixel of display
It, each pixel may include substrate, sequentially stack in the first metal layer on the substrate, organic material layer and second metal layer,
Wherein the first metal layer can be following one of which：The thickness of the first metal layer is zero, then the pixel can send organic material
Light caused by layer；The surface of the substrate is completely covered, then the pixel can send one kind the consistency of thickness of the first metal layer
Light after the light of wave band, i.e. red shift or blue shift；The first metal layer includes the metal for covering the part surface of the substrate
The opening portion on the remaining surface of portion and the exposed substrate, then the pixel can send the light of two kinds of wave bands, i.e. organic material layer
Light after caused light and red shift or blue shift；The first metal layer includes at least two surfaces for covering the substrate
Metal portion, then the pixel can send the light of two kinds of wave bands, i.e. light after red shift and blue shift；And the first metal layer bag
Include the metal portion at least two surfaces for covering the substrate and the part of the exposed substrate should between two metal portions
The opening portion on surface, then the pixel can send the light of three kinds of wave bands, i.e., light, red shift and blue shift caused by organic material layer
Light afterwards.For example, referring to Fig. 10, the light-emitting component 500 of this case includes multiple pixels 10, each pixel 10 includes sequentially heap
Substrate 2 repeatedly, the first metal layer 3a, carrier injection/transport layer 41, organic material layer 42, carrier injection/transport layer 43 and second
Metal level 5, organic material layer 42 can send the light that peak wavelength is located at the first scope.It is substrate 2, organic in each pixel 10
Material layer 42 and second metal layer 5 are identical with above-described embodiment those shown, and the first metal layer 3a can be following one of which：It is thick
Degree be as one man completely covered substrate 2 surface (in such as Figure 10 from the left side calculation come second or six pixels), by adjusting the first gold medal
It is smaller or distance between the first metal layer 3a and second metal layer 5 is bigger to belong to layer 3a thickness, the peak wavelength of the light can be made
From first range displacement to the second scope, or, the thickness by adjusting the first metal layer 3a is bigger or the first metal layer 3a
Distance between second metal layer 5 is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；First
Metal level 3a has the opening portion on the metal portion on the part surface of covering substrate 2 and the remaining surface of exposed substrate 2 (as schemed
From the left side, calculation carrys out the 3rd pixel in 10), the thickness by adjusting the metal portion is smaller or the metal portion and second metal layer 5 between
Distance it is bigger, the peak wavelength of the light can be made from first range displacement to second scope, or, by adjusting the gold
The thickness in category portion is bigger or distance between the metal portion and second metal layer 5 is smaller, can make the peak wavelength of the light from this
One range displacement to the 3rd scope；The first metal layer 3a has the first metal portion and the second metal portion, by adjust this first
The thickness of metal portion is smaller or distance between first metal portion and second metal layer 5 is bigger, can make the peak wavelength of the light
From first range displacement to second scope, the thickness by adjusting second metal portion is bigger or second metal portion and the
Distance between two metal levels 5 is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；First gold medal
Category layer 3a has the first metal portion, the second metal portion and is formed at exposed substrate 2 between first metal portion and the second metal portion
The part surface opening portion (in such as Figure 10 from the left side calculation come first or five pixels), by adjusting first metal portion
Thickness is smaller or distance between first metal portion and the second metal layer is bigger, can make the peak wavelength of the light from this first
Range displacement is to second scope, and the thickness by adjusting second metal portion is bigger or second metal portion and second metal
The distance of interlayer is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；And first metal
Layer 3a thickness will maintain script wavelength non-displacement when being zero (calculation carrys out the 4th pixel from the left side in such as Figure 10).
In summary, the light-emitting component of this case does not include luminescent layer, is only passed by the hole to be contacted with each other in organic material layer
Defeated material and electron transport material interaction thereby reduces cost of manufacture and work to produce the exciplex that can be emitted beam
Sequence, plasmon coupling effect separately occurs by the first and second metal levels of organic material layer upper and lower sides, sharp base can be made compound
The peak wavelength red shift of the light of thing or blue shift, blue light is sent without using blue-fluorescence/phosphorescent guest luminescent material to produce
Light-emitting component, send without using red fluorescence/phosphorescent guest luminescent material the light-emitting component of feux rouges or without using red or
Blue-fluorescence/phosphorescent guest luminescent material and send the light-emitting component of white light.
Above-described embodiment only illustrative this case the effect of, it is any to be familiar with this skill not for limitation this case
Personage can be modified and be changed to these above-mentioned embodiments under the spirit and scope without prejudice to this case.Therefore the power of this case
Sharp protection domain, should be as listed by claims.
Claims (39)
1. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：
Substrate；
The first metal layer, it is formed on the substrate；
Second metal layer, it is formed above the first metal layer；And
Organic material layer, it is formed between the first metal layer and the second metal layer and the hole transport including contacting with each other
Material and electron transport material,
Wherein, the hole mobile material and the electron transport material interact can send peak wavelength and be located at the first model to produce
The exciplex of the light enclosed, and plasmon coupling is produced between the first metal layer and the second metal layer so that the light
The peak wavelength displacement of line, and adjust the thickness of the distance or the first metal layer between the first metal layer and the second metal layer
Degree, can make the peak wavelength of the light be moved to the second scope or the 3rd scope.
2. light-emitting component as claimed in claim 1, it is characterized in that, the substrate has a surface, and the first metal layer is formed
In on the substrate so that the surface of the substrate is completely covered.
3. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer is in 5nm-20nm, and this first
Distance between metal level and the second metal layer exists in 75nm-150nm, first scope in 495nm-570nm, second scope
570nm-750nm, the 3rd scope in 380nm-495nm, when the thickness of the first metal layer is smaller or the first metal layer with
Distance between the second metal layer is bigger, and the peak wavelength of the light is from first range displacement to second scope；When this
The thickness of one metal level is bigger or distance between the first metal layer and the second metal layer is smaller, the peak wavelength of the light from
First range displacement is to the 3rd scope.
4. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer is in 5nm-20nm, and this first
Distance between metal level and the second metal layer is in 150nm-1000nm, and first scope is in 570nm-750nm, second model
Enclose more than first scope and be less than 1240nm.
5. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer in 5nm-20nm, and this
Distance between one metal level and the second metal layer is less than first scope and is more than in 30nm-75nm, then the 3rd scope
305nm。
6. light-emitting component as claimed in claim 1, it is characterized in that, first scope exists in 495nm-570nm, second scope
570nm-750nm, the 3rd scope is in 380nm-495nm, and the first metal layer includes the first metal portion and the second metal portion,
The thickness of first metal portion adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer exists
Adjusted between 75nm-150nm, the peak wavelength of the light can be made from first range displacement to second scope；Second gold medal
The thickness in category portion adjusts between 5nm-20nm and the distance between second metal portion and the second metal layer is in 75nm-150nm
Between adjust, the peak wavelength of the light can be made from first range displacement to the 3rd scope, and the thickness of second metal portion
Degree is less than first metal portion more than the distance between the thickness or second metal portion and the second metal layer of first metal portion
With the distance between the second metal layer.
7. light-emitting component as claimed in claim 1, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal oxygen
Compound.
8. light-emitting component as claimed in claim 6, it is characterized in that, first gold medal can be adjusted by adjusting the thickness of the organic material layer
The distance between distance and second metal portion and the second metal layer between category portion and the second metal layer.
9. light-emitting component as claimed in claim 1, it is characterized in that, the organic material layer includes by the hole mobile material and is somebody's turn to do
The mixed layer that electron transport material mixing is formed.
10. light-emitting component as claimed in claim 1, it is characterized in that, the organic material layer is included by the hole mobile material institute
The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material
Transport layer.
11. light-emitting component as claimed in claim 10, it is characterized in that, the substrate or the first metal layer are as anode, and this
Two metal levels are as negative electrode；The hole transmission layer is adjacent to the first metal layer, and the electron transfer layer is adjacent to the second metal layer.
12. light-emitting component as claimed in claim 1, it is characterized in that, the substrate or the first metal layer as anode, and this
Two metal levels are as negative electrode；Formed with hole injection layer between the first metal layer and the organic material layer, and second metal
Formed with electron injecting layer between layer and the organic material layer.
13. light-emitting component as claimed in claim 1, it is characterized in that, the first metal layer and the second metal layer by metal or
Nano-metal-oxide is formed.
14. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：
Substrate, it has a surface；
The first metal layer, it is formed on the substrate and with the first metal portion, the second metal portion and positioned at first metal portion
And second between the metal portion and exposed part surface opening portion；
Second metal layer, it is formed above the first metal layer；And
Organic material layer, it is formed between the first metal layer and the second metal layer and covers the first metal portion, second
Metal portion and by the exposed part in the opening portion surface, the organic material layer and the hole mobile material including contacting with each other
And electron transport material,
Wherein, the hole mobile material and the electron transport material interact and generation can send peak wavelength and be located at the first model
The exciplex of the light enclosed, and first metal portion produces the first plasmon coupling so that the light with the second metal layer
The peak wavelength of line from first range displacement to the second scope, second metal portion and the second metal layer produce the second grade from
Daughter couples so that the peak wavelength of the light is from first range displacement to the 3rd scope.
15. light-emitting component as claimed in claim 14, it is characterized in that, first scope is in 495nm-570nm, second scope
In 570nm-750nm, the 3rd scope adjusted between 5nm-20nm in 380nm-495nm, the thickness of first metal portion and
Distance between first metal portion and the second metal layer adjusts between 75nm-150nm, can make the peak wavelength of the light certainly
First range displacement is to the second scope；The thickness of second metal portion adjusted between 5nm-20nm and second metal portion with
Distance between the second metal layer adjusts between 75nm-150nm, can make the peak wavelength of the light from first range displacement
To the 3rd scope, and the thickness of second metal portion is more than the thickness or second metal portion and second gold medal of first metal portion
Belong to the distance of interlayer less than the distance between first metal portion and the second metal layer.
16. light-emitting component as claimed in claim 14, it is characterized in that, first scope is green light band, and second scope is
Red spectral band, the 3rd scope are blue wave band, to send the white light being made up of green glow, feux rouges and blue light in the light-emitting component
When, it is adjusted by that first metal portion covers the area on the surface, second metal portion covers the area and the opening on the surface
The area on the surface of the exposed part in portion can change the ratio of the green glow, the feux rouges and the blue light.
17. light-emitting component as claimed in claim 14, it is characterized in that, first scope is in 570nm-750nm, second scope
More than first scope and it is less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, first metal portion
Thickness adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer is between 150nm-1000nm
Adjustment, the thickness of second metal portion is adjusted between 5nm-20nm and the distance between second metal portion and the second metal layer
Adjusted between 30nm-75nm.
18. light-emitting component as claimed in claim 14, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal
Oxide.
19. light-emitting component as claimed in claim 14, it is characterized in that, the organic material layer include by the hole mobile material and
The mixed layer that electron transport material mixing is formed.
20. light-emitting component as claimed in claim 14, it is characterized in that, the organic material layer is included by the hole mobile material institute
The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material
Transport layer.
21. light-emitting component as claimed in claim 20, it is characterized in that, the substrate or the first metal layer are as anode, and this
Two metal levels are as negative electrode；The hole transmission layer is adjacent to the first metal layer, and the electron transfer layer is adjacent to the second metal layer.
22. light-emitting component as claimed in claim 14, it is characterized in that, the substrate or the first metal layer are somebody's turn to do as anode
Second metal layer is as negative electrode；Formed with hole injection layer between the first metal layer and the organic material layer, and second gold medal
Belong between layer and the organic material layer formed with electron injecting layer.
23. light-emitting component as claimed in claim 14, it is characterized in that, the first metal layer and the second metal layer are by metal
Or nano-metal-oxide is formed, and the first metal layer is patterned metal layer or grid-shaped metal layer.
24. light-emitting component as claimed in claim 14, it is characterized in that, first metal portion and second metal portion composition are multiple
Periodic structure, so that peak wavelength produces gain, the cycle in the light of first scope, the second scope or the 3rd scope
Property structure size is between 40nm-437nm and the cycle is between 50nm-965nm.
25. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：
Substrate；
The first metal layer, it is formed on the substrate；
Second metal layer, it is formed above the first metal layer；
3rd metal level, it is formed above the second metal layer；
4th metal level, it is formed at the 3rd metal layer；
First organic material layer, it is formed between the first metal layer and the second metal layer；
Second organic material layer, it is formed between the second metal layer and the 3rd metal level；And
3rd organic material layer, it is formed between the 3rd metal level and the 4th metal level；
Wherein, first organic material layer, second organic material layer, the 3rd organic material layer each include what is contacted with each other
Hole mobile material and electron transport material, and swash caused by the hole mobile material and electron transport material interaction
Base complex can send the light that peak wavelength is located at the first scope, so that first organic material layer, second organic material
Layer, the 3rd organic material layer each send the peak wavelength of the first light, the second light, the 3rd light all in the first scope
It is interior, the second plasmon coupling is produced between the second metal layer and the 3rd metal level so that the peak wavelength of second light
From first range displacement to the second scope, and three plasma body coupling is produced between the 3rd metal level and the 4th metal level
Close so that the peak wavelength of the 3rd light is from first range displacement to the 3rd scope.
26. light-emitting component as claimed in claim 25, it is characterized in that, first scope is in 495nm-570nm, and second model
It is trapped among 570nm-750nm, in 380nm-495nm, the thickness of the second metal layer and the 3rd metal level all exists the 3rd scope
The distance of 5nm-20nm, the second metal layer and the 3rd metal interlevel is in 75nm-150nm, the 3rd metal level and the 4th
The distance of metal interlevel is in 75nm-150nm and less than the second metal layer and the distance of the 3rd metal interlevel.
27. light-emitting component as claimed in claim 25, it is characterized in that, first scope is in 570nm-750nm, second scope
More than first scope and be less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, the second metal layer and
The thickness of 3rd metal level is all in 5nm-20nm, and the second metal layer and the distance of the 3rd metal interlevel are in 150nm-
The distance of 1000nm, the 3rd metal level and the 4th metal interlevel is in 30nm-75nm.
28. light-emitting component as claimed in claim 25, it is characterized in that, adjust thickness, the 3rd metal of the second metal layer
The thickness of layer or the second metal layer and the distance of the 3rd metal interlevel can change the numerical value of second scope, and adjust and be somebody's turn to do
Thickness, the thickness of the 4th metal level or the distance of the 3rd metal level and the 4th metal interlevel of 3rd metal level can change
Become the numerical value of the 3rd scope.
29. light-emitting component as claimed in claim 25, it is characterized in that, the substrate or the first metal layer are as anode, and this
Four metal levels are as negative electrode.
30. light-emitting component as claimed in claim 25, it is characterized in that, the first metal layer, the second metal layer, the 3rd gold medal
Belonging to layer or the 4th metal level is made up of metal or nano-metal-oxide.
31. light-emitting component as claimed in claim 25, it is characterized in that, first organic material layer, second organic material layer,
3rd organic material layer each includes the mixed layer being made up of the hole mobile material and electron transport material mixing.
32. light-emitting component as claimed in claim 25, it is characterized in that, first organic material layer, second organic material layer,
3rd organic material layer each includes the hole transmission layer being made up of the hole mobile material and contact and is arranged at this
The electron transfer layer formed on hole transmission layer and by the electron transport material.
33. a kind of light-emitting component, including multiple pixels, it is characterized in that, respectively the pixel includes：
Substrate, it has a surface；
The first metal layer, it is formed on the substrate；
Second metal layer, it is formed above the first metal layer；And
Organic material layer, it is formed between the first metal layer and the second metal layer and the hole transport including contacting with each other
Material and electron transport material, and the hole mobile material can send peak value ripple with electron transport material interaction to produce
The exciplex of the long light positioned at the first scope, and across the first metal layer and second metal of the organic material layer
Layer produces the peak wavelength displacement that plasmon coupling causes the light,
Wherein, respectively the pixel for it is following one of them：
The surface is completely covered in the first metal layer, the thickness by adjusting the first metal layer is smaller or the first metal layer with
Distance between the second metal layer is bigger, can make the peak wavelength of the light from first range displacement to the second scope, or
Thickness by adjusting the first metal layer is bigger or distance between the first metal layer and the second metal layer is smaller, can make this
The peak wavelength of light is from first range displacement to the 3rd scope；
The first metal layer has the metal portion on the covering part surface and the opening portion on the exposed remaining surface, should by adjustment
The thickness of metal portion is smaller or distance between the metal portion and the second metal layer is bigger, can make the peak wavelength of the light from should
The thickness of the metal portion is bigger or the metal portion and second metal to second scope, or by adjusting for first range displacement
The distance of interlayer is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；
The first metal layer has the first metal portion and the second metal portion for covering the surface, by adjusting first metal portion
Thickness is smaller or distance between first metal portion and the second metal layer is bigger, can make the peak wavelength of the light from this first
Range displacement is to second scope, and the thickness by adjusting second metal portion is bigger or second metal portion and second metal
The distance of interlayer is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；And
The first metal layer has the first metal portion, the second metal portion and is formed between first metal portion and the second metal portion
The opening portion on the exposed parts surface, the thickness by adjusting first metal portion is smaller or first metal portion and second gold medal
It is bigger to belong to the distance of interlayer, the peak wavelength of the light can be made from first range displacement to second scope, should by adjustment
The thickness of second metal portion is bigger or distance between second metal portion and the second metal layer is smaller, can make the peak value of the light
Wavelength is from first range displacement to the 3rd scope.
34. light-emitting component as claimed in claim 33, it is characterized in that, first scope is in 495nm-570nm, second scope
In 570nm-750nm, the 3rd scope is in 380nm-495nm, the first metal layer, first metal portion and second metal portion
Thickness adjusted between 5nm-20nm, between the first metal layer and the second metal layer, first metal portion and second gold medal
Distance between category interlayer and second metal portion and the second metal layer adjusts between 75nm-150nm.
35. light-emitting component as claimed in claim 33, it is characterized in that, first scope is in 570nm-750nm, second scope
More than first scope and it is less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, first metal portion
Thickness adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer is between 150nm-1000nm
Adjustment, the thickness of second metal portion is adjusted between 5nm-20nm and the distance between second metal portion and the second metal layer
Adjusted between 30nm-75nm.
36. light-emitting component as claimed in claim 33, it is characterized in that, the organic material layer include by the hole mobile material and
The mixed layer that electron transport material mixing is formed.
37. light-emitting component as claimed in claim 33, it is characterized in that, the organic material layer is included by the hole mobile material institute
The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material
Transport layer.
38. light-emitting component as claimed in claim 33, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal
Oxide.
39. light-emitting component as claimed in claim 33, it is characterized in that, the light-emitting component is passive-matrix Organic Light Emitting Diode
Or active-matrix Organic Light Emitting Diode.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104102492 | 2015-01-26 | ||
| TW104102492 | 2015-01-26 | ||
| TW104107524 | 2015-03-10 | ||
| TW104107524 | 2015-03-10 | ||
| TW104112373 | 2015-04-17 | ||
| TW104112373A TWI596816B (en) | 2015-03-10 | 2015-04-17 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826478A CN105826478A (en) | 2016-08-03 |
| CN105826478B true CN105826478B (en) | 2018-01-16 |
Family
ID=56514406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510371554.7A Active CN105826478B (en) | 2015-01-26 | 2015-06-30 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105826478B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI596816B (en) | 2015-03-10 | 2017-08-21 | 財團法人工業技術研究院 | Light emitting element |
| TWI678825B (en) * | 2016-12-15 | 2019-12-01 | 財團法人工業技術研究院 | Light emitting element |
| CN107394049A (en) * | 2017-07-06 | 2017-11-24 | 深圳市华星光电技术有限公司 | A kind of white light OLED device |
| CN109860405B (en) * | 2019-01-23 | 2021-07-02 | 太原理工大学 | White organic light emitting diode based on interface complementary color laser-based emission |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170383A (en) * | 1994-12-13 | 1998-01-14 | 普林斯顿大学理事会 | Multicolor organic light emitting devices |
| US5811833A (en) * | 1996-12-23 | 1998-09-22 | University Of So. Ca | Electron transporting and light emitting layers based on organic free radicals |
| CN1939096A (en) * | 2004-04-06 | 2007-03-28 | 出光兴产株式会社 | Organic EL display device and full-color device |
| CN103904100A (en) * | 2012-12-27 | 2014-07-02 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| WO2014119385A1 (en) * | 2013-02-01 | 2014-08-07 | 日東電工株式会社 | Organic electroluminescent device |
| TW201431853A (en) * | 2013-02-08 | 2014-08-16 | Gen-Cong Wang | Electron transmission material and organic light-emitting element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133071A (en) * | 2001-08-13 | 2003-05-09 | Victor Co Of Japan Ltd | Organic electroluminescent element and its manufacturing method |
| US7023013B2 (en) * | 2004-06-16 | 2006-04-04 | Eastman Kodak Company | Array of light-emitting OLED microcavity pixels |
-
2015
- 2015-06-30 CN CN201510371554.7A patent/CN105826478B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170383A (en) * | 1994-12-13 | 1998-01-14 | 普林斯顿大学理事会 | Multicolor organic light emitting devices |
| US5811833A (en) * | 1996-12-23 | 1998-09-22 | University Of So. Ca | Electron transporting and light emitting layers based on organic free radicals |
| CN1939096A (en) * | 2004-04-06 | 2007-03-28 | 出光兴产株式会社 | Organic EL display device and full-color device |
| CN103904100A (en) * | 2012-12-27 | 2014-07-02 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| WO2014119385A1 (en) * | 2013-02-01 | 2014-08-07 | 日東電工株式会社 | Organic electroluminescent device |
| TW201431853A (en) * | 2013-02-08 | 2014-08-16 | Gen-Cong Wang | Electron transmission material and organic light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105826478A (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10229954B2 (en) | Organic light-emitting device and organic light-emitting display device using the same | |
| US8796676B2 (en) | Tandem white organic light emitting device | |
| KR102130426B1 (en) | Novel oled display architecture | |
| US10347858B2 (en) | White organic light emitting device | |
| TWI513076B (en) | Organic light emitting diode (oled) device | |
| KR102066090B1 (en) | Organic light emitting display device | |
| KR20100071539A (en) | Organic light emitting device and method for manufacturing the same | |
| KR102066092B1 (en) | Organic light emitting display and method for fabricating the same | |
| GB2511191A (en) | Organic light emitting display device | |
| TW201440280A (en) | Organic light emitting diode device | |
| CN105826479B (en) | Light emitting element | |
| KR20150037235A (en) | Organic light emitting diode display | |
| CN105826478B (en) | Light emitting element | |
| KR102595367B1 (en) | White organic light emitting device | |
| KR101926524B1 (en) | Organic light emitting display device | |
| KR101878328B1 (en) | Organic electroluminescent Device | |
| KR20230025422A (en) | Organic light emitting device | |
| KR102081248B1 (en) | Organic light emitting diode display | |
| US9704924B2 (en) | Light emitting device | |
| KR102094141B1 (en) | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same | |
| KR101407579B1 (en) | Organic light emitting device and method of driving the same | |
| KR101845309B1 (en) | Organic electro-luminescent Device | |
| KR102435038B1 (en) | Organic light emitting display device | |
| KR102607169B1 (en) | Organic light emitting display device | |
| KR101854699B1 (en) | Organic Emitting Device and Display Device Using the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |