CN105826472A - Organic photoelectric switch as well as manufacture method and application of same - Google Patents
Organic photoelectric switch as well as manufacture method and application of same Download PDFInfo
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- CN105826472A CN105826472A CN201610317534.6A CN201610317534A CN105826472A CN 105826472 A CN105826472 A CN 105826472A CN 201610317534 A CN201610317534 A CN 201610317534A CN 105826472 A CN105826472 A CN 105826472A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses an organic photoelectric switch as well as a manufacture method and an application of the same. The technical scheme disclosed by the invention has the key points that the organic photoelectric switch is manufactured through successive coating or evaporation of a positive charge transmission layer, a photosensitive active layer, a negative charge blocking layer and a metal back electrode on a substrate, removal of a positive electrode shielding layer, connection of an electrode lead wire and final packaging, wherein the photosensitive active layer is formed through coating of a mixed organic solution which contains an organic micro-molecule semiconductor material and a fullerene derivative PCBM by a coating machine. The invention also discloses the specific manufacture method of the organic photoelectric switch as well as the application of the switch in a film-type organic photo-induced electric signal function device. According to the invention, the organic photoelectric switch with high sensitivity and high stability as well as an area and a shape which are set arbitrarily can be manufactured; and the organic photoelectric switch has an exquisite structure, and the switch is simple, practical and applicable to being used as a light activated switch in an automatic control field.
Description
Technical field
The invention belongs to photoswitch technical field, be specifically related to a kind of organic photoelectric switch and manufacture method thereof and application.
Background technology
Photoswitch (photoelectric sensor) is the abbreviation of photoelectric proximity switch, and it is to utilize detected material to block light beam, by synchronization loop on-off circuit, the presence or absence of detection object.Object is not limited to metal, and all objects that can stop light all can be detected.Input current is converted to optical signal injection on emitter by photoswitch, and receptor further according to the power of the light received or detects with or without to target object.Photoswitch smoke alarm common in safety-protection system, in industry through conventional it carry out the times of exercise of counting machine mechanical arm.Elevator closes response etc. automatically.Along with automated control technology constantly improves, photoswitch application is more and more wider.Low cost, highly sensitive, high steady reliability, it means that every watt of luminous power will have the above signal code output of more than 100 milliamperes, the advantage having its uniqueness can be switched by the thin film photovoltaic that produces of high-volume high duplication.
Summary of the invention
Present invention solves the technical problem that and there is provided a kind of highly sensitive, high reliability and the organic photoelectric switch that can manufacture in high volume and manufacture method thereof, can manufacture this organic photoelectric switch with arbitrary area in substrate, the organic photoelectric prepared switch can preferably be applied in the organic photic electric signal function device of diaphragm type.
The present invention solves that above-mentioned technical problem adopts the following technical scheme that, a kind of organic photoelectric switch, it is characterized in that in substrate, being coated with or being deposited with positive charge transport layer, photosensitive activity layer, negative charge barrier layer and metal back electrode successively and remove what positive pole barrier bed connection contact conductor post package was made, wherein photosensitive activity layer is to be formed by the mixed organic solvents of coating machine coating Organic micromolecular semiconductor material with fullerene derivate PCBM, and the structural formula of this Organic micromolecular semiconductor material is:
Or
,
The structural formula of fullerene derivate PCBM is:
。
Further preferably, described substrate is indium tin oxide ito glass, fluorine tin-oxide FTO glass or indium tin oxide ITO terylene PET film.
Further preferably, described positive charge transport layer is the positive charge transport layer that thickness is 20-50nm by coating machine coating 3,4-ethylene dioxythiophene polymer-poly styrene sulfonate solution formation or the positive charge transport layer that thickness is 10nm formed by vacuum evaporation nanoscale molybdenum oxide.
Further preferably, described negative charge barrier layer is formed by vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal.
Further preferably, described metal back electrode is formed by vacuum evaporation fine aluminium.
Further preferably, described Organic micromolecular semiconductor material is o-dichlorohenzene, chlorobenzene or trimethylbenzene with the solvent in the mixed organic solvents of fullerene derivate PCBM.
Further preferably, the thickness of described photosensitive activity layer is 100-200nm, and the thickness on negative charge barrier layer is 0.5-1nm, and the thickness of metal back electrode is 100nm.
The manufacture method of organic photoelectric of the present invention switch, it is characterised in that concretely comprise the following steps:
Step (1), in the clean room of 100 grades, the glass that thickness with electroconductive indium tin oxide transparency electrode is 1mm of one piece of 2.5 × 12cm is coated with 3,4-ethylenedioxy thiophene polymer-poly styrene sulfonate solution, 120 DEG C are dried 10 minutes formation thickness is the positive charge transport layer of 20-50nm, mixed organic solvents by film coater coating coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
The manufacture method of organic photoelectric of the present invention switch, it is characterised in that concretely comprise the following steps:
Step (1), in the clean room of 100 grades, on the thin film with the polyethylene terephthalate of electroconductive indium tin oxide transparency electrode of one piece of 6 × 12cm, vacuum evaporation nanoscale molybdenum oxide forms the positive charge transport layer that thickness is 10nm, mixed organic solvents by film coater coating coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
The application in the organic photic electric signal function device of diaphragm type of the organic photoelectric of the present invention switch.
Highly sensitive, the organic photoelectric switch of high stable that the present invention can manufacture area and shape arbitrarily sets, and this organic photoelectric construction of switch is exquisite and simple and practical, it is adaptable to and automation field makees photosensitive switch.
Accompanying drawing explanation
Fig. 1 is the organic photoelectric switch resonse characteristic that the embodiment of the present invention prepares；
Fig. 2 is the organic photoelectric switch resonse characteristic that the embodiment of the present invention prepares；
Fig. 3 is the organic photoelectric switch photoelectricity linear response range that the embodiment of the present invention prepares.
Detailed description of the invention
Being described in further details the foregoing of the present invention by the following examples, but this should not being interpreted as, the scope of the above-mentioned theme of the present invention is only limitted to below example, all technology realized based on foregoing of the present invention belong to the scope of the present invention.
Embodiment 1
Step (1), in the clean room of 100 grades, the glass that thickness with electroconductive indium tin oxide transparency electrode is 1mm of one piece of 2.5 × 12cm is coated with 3,4-ethylenedioxy thiophene polymer-poly styrene sulfonate solution, 120 DEG C are dried 10 minutes formation thickness is the positive charge transport layer of 20-50nm, mixed organic solvents by film coater coating coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
Embodiment 2
Step (1), in the clean room of 100 grades, on the thin film with the polyethylene terephthalate of electroconductive indium tin oxide transparency electrode of one piece of 6 × 12cm, vacuum evaporation nanoscale molybdenum oxide forms the positive charge transport layer that thickness is 10nm, mixed organic solvents by film coater coating coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
As shown in Figure 1-2, organic photoelectric switch photoelectricity linear response range is as shown in Figure 3 for organic photoelectric switch response characteristic.The present invention provides diaphragm type organic photoelectric to detect signal generator, for corresponding wave-length coverage 400-700nm of photodetection.Optical responsivity be 498mA/W at 532nm, 411mA/W is at 40nm.Response time is 2-5 millisecond by off status to open state, open state to off status be 3-10 millisecond.The range of linearity: light source power 1-150 milliwatt.
Embodiment above describes the ultimate principle of the present invention, principal character and advantage; skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; the principle that the present invention is simply described described in above-described embodiment and description; under the scope without departing from the principle of the invention; the present invention also has various changes and modifications, and these changes and improvements each fall within the scope of protection of the invention.
Claims (10)
1. an organic photoelectric switch, it is characterized in that in substrate, being coated with or being deposited with positive charge transport layer, photosensitive activity layer, negative charge barrier layer and metal back electrode successively and remove what positive pole barrier bed connection contact conductor post package was made, wherein photosensitive activity layer is to be formed by the mixed organic solvents of coating machine coating Organic micromolecular semiconductor material with fullerene derivate PCBM, and the structural formula of this small molecule organic semiconductor material is:
Or
,
The structural formula of fullerene derivate PCBM is:
。
Organic photoelectric the most according to claim 1 switchs, it is characterised in that: described substrate is indium tin oxide ito glass, fluorine tin-oxide FTO glass or indium tin oxide ITO terylene PET film.
Organic photoelectric the most according to claim 1 switchs, it is characterized in that: described positive charge transport layer is the positive charge transport layer that thickness is 20-50nm by coating machine coating 3,4-ethylene dioxythiophene polymer-poly styrene sulfonate solution formation or the positive charge transport layer that thickness is 10nm formed by vacuum evaporation nanoscale molybdenum oxide.
Organic photoelectric the most according to claim 1 switchs, it is characterised in that: described negative charge barrier layer is formed by vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal.
Organic photoelectric the most according to claim 1 switchs, it is characterised in that: described metal back electrode is formed by vacuum evaporation fine aluminium.
Organic photoelectric the most according to claim 1 switchs, it is characterised in that: described Organic micromolecular semiconductor material is o-dichlorohenzene, chlorobenzene or trimethylbenzene with the solvent in the mixed organic solvents of fullerene derivate PCBM.
Organic photoelectric the most according to claim 1 switchs, it is characterised in that: the thickness of described photosensitive activity layer is 100-200nm, and the thickness on negative charge barrier layer is 0.5-1nm, and the thickness of metal back electrode is 100nm.
8. the manufacture method of the organic photoelectric switch described in a claim 1, it is characterised in that concretely comprise the following steps:
Step (1), in the clean room of 100 grades, the glass that thickness with electroconductive indium tin oxide transparency electrode is 1mm of one piece of 2.5 × 12cm is coated with 3,4-ethylenedioxy thiophene polymer-poly styrene sulfonate solution, 120 DEG C are dried 10 minutes formation thickness is the positive charge transport layer of 20-50nm, mixed organic solvents by film coater coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
9. the manufacture method of the organic photoelectric switch described in a claim 1, it is characterised in that concretely comprise the following steps:
Step (1), in the clean room of 100 grades, on the thin film with the polyethylene terephthalate of electroconductive indium tin oxide transparency electrode of one piece of 6 × 12cm, vacuum evaporation nanoscale molybdenum oxide forms the positive charge transport layer that thickness is 10nm, mixed organic solvents by film coater coating coating Organic micromolecular semiconductor material with fullerene derivate PCBM, wherein solvent is o-dichlorohenzene, chlorobenzene or trimethylbenzene, and 120 DEG C are dried 10 minutes formation thickness is the photosensitive activity layer of 100-200nm；
Step (2), in glove box, on the photosensitive activity layer that step (1) makes, vacuum electrode evaporation cushioning layer material lithium fluoride or buffer electrode layer material calcium metal form the negative charge barrier layer that thickness is 0.5-1nm；
Step (3), in glove box, on the negative charge barrier layer that step (2) makes, vacuum evaporation fine aluminium forms thickness is the metal back electrode of 100nm；
Step (4), diaphragm type substrate step (3) made in glove box connects negative electrode, and removes positive pole barrier bed connection anelectrode；
Step (5), every a piece of photoswitch step (4) made in glove box prepares organic photoelectric by the encapsulation of epoxy resin heat sealing machine and switchs.
10. the application in the organic photic electric signal function device of diaphragm type of the organic photoelectric switch described in claim 1.
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| CN201610317534.6A CN105826472A (en) | 2016-05-16 | 2016-05-16 | Organic photoelectric switch as well as manufacture method and application of same |
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| CN201610317534.6A CN105826472A (en) | 2016-05-16 | 2016-05-16 | Organic photoelectric switch as well as manufacture method and application of same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180592A (en) * | 2020-01-08 | 2020-05-19 | 河南师范大学 | Manufacturing method of full-wavelength 360-degree detectable organic thin-film photoelectric detector |
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| CN105324460A (en) * | 2013-06-21 | 2016-02-10 | 默克专利有限公司 | Conjugated polymers |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180592A (en) * | 2020-01-08 | 2020-05-19 | 河南师范大学 | Manufacturing method of full-wavelength 360-degree detectable organic thin-film photoelectric detector |
| CN111180592B (en) * | 2020-01-08 | 2022-07-29 | 河南师范大学 | Manufacturing method of full-wavelength 360-degree detectable organic thin-film type photoelectric detector |
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Application publication date: 20160803 |