CN105826440B - Gallium nitride based light emitting diode and preparation method thereof - Google Patents
Gallium nitride based light emitting diode and preparation method thereof Download PDFInfo
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- CN105826440B CN105826440B CN201610350604.8A CN201610350604A CN105826440B CN 105826440 B CN105826440 B CN 105826440B CN 201610350604 A CN201610350604 A CN 201610350604A CN 105826440 B CN105826440 B CN 105826440B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
The present invention provides a kind of high photosynthetic efficiency gallium nitride based light emitting diode and preparation method thereof, belongs to photoelectric device preparation field, which can maintain higher photoelectric conversion efficiency under Bulk current injection, reduces Droop effect.Its specific structure includes p-type layer two parts of bottom, luminescent layer and the molecular beam epitaxy technique growth of MOCVD technology growth, it may be assumed that MOCVD technology growth gallium polarity buffer layer, non-nitrating compound layer, N-type nitride layer, multi-quantum well luminescence layer；Then sample is transferred to molecular beam epitaxial device reaction chamber, growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer.This method can reduce the band curvature as caused by polarization between electronic barrier layer and multi-quantum well luminescence layer, not only can increase electronics and crosses the barrier height for being flushed to P-type layer, but also can reduce the potential barrier that hole is injected into multiquantum well region.
Description
Technical field
The present invention relates to semiconductor photoelectric device preparation field more particularly to a kind of preparations of high photosynthetic efficiency gallium nitride based LED
Technology.
Background technique
The fast development of broad stopband III-V group semi-conductor material is so that high brightness LED realizes green light to nearly purple
The commercialization of outer product.But current commercialized LED largely uses MOCVD technology in sapphire, silicon carbide or silicon substrate
The nitride in 001 face of upper growth is prepared, and surface is all gallium polar surface.
Fig. 1 shows routine business gallium-polar gallium nitride based LED construction figure, wherein multi-quantum well luminescence layer 104 and electricity
Due to the difference of lattice constant between sub- barrier layer 105, there are stronger polarization fields.Fig. 2 shows routine business gallium polarity
Gallium nitride based LED band structure figure, electronic barrier layer 104 lead to energy band due to being generated positive charge in interface by tensile strain
It is bent downwardly, reduces electronic barrier layer in the effective barrier height of conduction band, increase, not only reduce in effective potential barrier of valence band
Electronic barrier layer is to the blocking capability of electronics, and the potential barrier for making p-type side hole be injected into multi-quantum well luminescence layer increases.
Summary of the invention
The object of the present invention is to provide a kind of high photosynthetic efficiency gallium nitride based LEDs and preparation method thereof, and it is curved can to weaken energy band
Qu Xiaoying weakens the blocking to hole while promoting electron-blocking capability, promotes device photoelectric conversion efficiency.
The technical solution of the present invention is as follows: gallium nitride based light emitting diode, comprising: a N-type nitride layer, a gallium polarity shine
Layer, a nitrogen polarity electronic barrier layer, a p-type nitride layer, a p-type nitride contact layer, the nitrogen polarity electronic barrier layer with
Polarization reversal design between gallium polar light emitting layer can reduce band curvature caused by polarization, not only can increase electronics and crosses and is flushed to
The barrier height of p-type nitride layer, and the potential barrier that hole is injected into multiquantum well region can be reduced.
Preferably, the low temperature buffer layer to multi-quantum well luminescence layer part is all made of MOCVD technology growth, then will lining
Bottom is transferred to molecular beam epitaxy reaction chamber growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer.
In the above-mentioned methods, molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer when for rich nitrogen condition, that is, reach
The group III source mole of substrate surface is less than the mole of group V source.
Further, the temperature of molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer is 700 ~ 1000 DEG C, it is preferable that
It is ~ 850 DEG C.
Further, nitrogen polarity electronic barrier layer can be body material, be also possible to superlattice structure, component or doping
It can be invariable, be also possible to gradual change.
Further, p-type nitride layer and p-type nitride contact layer can be nitrogen polarity, be also possible to gallium polarity, can also
To be the combination of the two.
Further, nitrogen polarity electronic barrier layer is grown using molecular beam epitaxy technique, realization is relatively easy to, do not need into
Mg modulation technique in row MOCVD technology, it is more precipitous with the interface of multi-quantum well luminescence layer, and there is wider growth window.
Further, it is nitrogenized using molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type
It is high vacuum condition when object contact layer, reaction chamber cleanliness is higher, and is simple substance source, without the introducing of the elements such as H, Mg element
Activation efficiency it is higher.
Further, p-type nitride layer and p-type nitride contact layer can also be reached using the growth conditions of rich gallium
The group III source mole of substrate surface is greater than the mole of group V source.
Further, nitrogen polarity electronic barrier layer is changed due to polarity, is caused and multi-quantum well luminescence layer interface
Polarization charge becomes negative polarization charge from positive polarisation charge, and energy band is bent downwardly decrease, enables electronic barrier layer to electronic blocking
Power enhancing, but hole blocking ability is weakened.
Further, the above method can promote the light efficiency of device in terms of stopping electronics and promoting hole injection two, improve
Droop effect.
The present invention uses the electronic barrier layer of nitrogen polar surface, makes with the polarization charge of multi-quantum well luminescence layer interface by just
Charge becomes negative electrical charge, reduces band curvature effect, while promoting electron-blocking capability, weakens the blocking to hole,
Promote device photoelectric conversion efficiency.In addition, the cleanliness of molecular beam epitaxy technique reaction chamber is higher, keep each bed boundary steeper
It is high and steep, be conducive to device performance promotion.
Detailed description of the invention
Fig. 1 is routine business gallium-polar gallium nitride based LED construction figure.
Fig. 2 is routine business gallium-polar gallium nitride base LED band structure figure.
Fig. 3 is to use a kind of high photosynthetic efficiency gallium nitride based LED side view prepared by the present invention.
Fig. 4 is a kind of high photosynthetic efficiency gallium nitride based LED band structure figure prepared by the present invention.
Fig. 5 is another LED junction composition disclosed by the invention.
Each label is expressed as follows in figure:
100 substrates；
101 gallium polarity low temperature buffer layers；
The non-nitrating compound layer of 102 gallium polarity；
103 gallium polarity N-type nitride layers；
104 gallium polarity multi-quantum well luminescence layers；
105 gallium polarity electronic barrier layers；
106 gallium polarity p-type nitride layers；
107 gallium polarity p-type nitride contact layers
205 nitrogen polarity electronic barrier layers；
206 nitrogen polarity p-type nitride layers；
207 nitrogen polarity p-type nitride contact layers.
Specific embodiment
For make a kind of high photosynthetic efficiency gallium nitride based LED of the present invention and preparation method thereof be more readily understood its substantive distinguishing features and its
The practicability being had below just is described in further detail several specific embodiments of the present invention in conjunction with attached drawing.But with ShiShimonoseki
The scope of the present invention is not limited in any way in the description of embodiment and explanation.
Embodiment 1.
The present invention provides a kind of high photosynthetic efficiency gallium nitride based LED and preparation method thereof, and preparation process mainly comprises the steps of:
Attached drawing 3 illustrates to sequentially consist of: substrate using a kind of high photosynthetic efficiency gallium nitride based LED prepared by the present invention
100, the non-nitrating compound layer 102 of gallium polarity low temperature buffer layer 101, gallium polarity, gallium polarity N-type nitride layer 103, gallium polarity volume
Sub- trap luminescent layer 104, nitrogen polarity electronic barrier layer 205, nitrogen polarity p-type nitride layer 206, nitrogen polarity p-type nitride contact layer
207。
Fig. 4 shows above-mentioned high photosynthetic efficiency gallium nitride based LED band structure figure.With routine business gallium polarity shown in Fig. 2
The comparison of gallium nitride based LED band structure figure, nitrogen polarity electronic barrier layer 205 is changed due to polarity in above structure, is caused
Negative polarization charge is become from positive polarisation charge with 104 interface polarization charge of multi-quantum well luminescence layer, energy band is bent downwardly decrease,
Enhance electronic barrier layer to electron-blocking capability, but hole blocking ability is weakened.Above-mentioned LED structure can from stop electronics and
The light efficiency that injection two aspect in hole promotes device is promoted, droop effect is improved.
Above-mentioned gallium nitride based LED is described in detail below with reference to preparation method.
Using conventional MOCVD technique in growth gallium polarity low temperature buffer layer 101, the non-nitrating compound of gallium polarity on substrate 100
After layer 102, gallium polarity N-type nitride layer 103, gallium polarity multi-quantum well luminescence layer 104, it is anti-that substrate is transferred to molecular beam epitaxy
It answers and grows nitrogen polarity electronic barrier layer 205, nitrogen polarity p-type nitride layer 206 and nitrogen polarity p-type nitride contact layer 207 in room.
Wherein sapphire, silicon carbide or silicon substrate can be selected in substrate 100；Gallium polarity low temperature buffer layer 101 can be gallium nitride, nitridation
Aluminium or aluminum gallium nitride combine, and film thickness is between 5 ~ 100nm；The film thickness of the non-nitrating compound layer 102 of gallium polarity 300 ~ 7000nm it
Between, preferably 3500nm；(thickness of gallium polarity N-type nitride layer 103 is greater than 1 μm；Gallium polarity multi-quantum well luminescence layer 104 with
InGaN is constituted as well layer, using GaN or AlGaN or both combination as barrier layer, and wherein barrier layer thickness is between 3 ~ 150nm, trap
Thickness degree is between 1 ~ 20nm.
(1) nitrogen polarity electronic barrier layer 205 is grown
In the present embodiment, nitrogen polarity electronic barrier layer 205 is grown using molecular beam epitaxy technique in the condition of rich nitrogen, i.e.,
The group III source mole for reaching substrate surface is less than the mole of group V source.Specifically: ~ 850 are warming up under the conditions of the source N is opened
DEG C, specific growth conditions are as follows: use N source excitation power for 500 W, N2Flow is 1.5 sccm, and equivalent line is ~ 1.0E-7
Torr, corresponding chamber pressure are 1 ~ 2E-5 Torr；Use the equivalent line in the source Ga for 5 ~ 7E-8 Torr, it is therefore preferable to ~ 7E-
The equivalent line of 8 Torr, Al are 3 ~ 5E-8 Torr, and V/III ratio is ~ 0.7, for rich nitrogen condition, it is ensured that reach substrate surface
Group III source mole is less than the mole of group V source.It grows obtained electronic barrier layer 205Al group and is divided into 10 ~ 30%, it is therefore preferable to
~ 20%, with a thickness of 500 ~ 1500A.
Above-mentioned nitrogen polarity electronic barrier layer 205 can be the body material of AlGaN layer, be also possible to the super crystalline substance of AlGaN/GaN
Lattice structure, Al component can be constant, can also can also carry out the doping in the source Mg with gradual change.
(2) nitrogen polarity p-type nitride layer 206 is grown
The growth conditions of nitrogen polarity p-type nitride layer are as follows: growth temperature is 750 ~ 1050 DEG C, it is therefore preferable to ~ 870 DEG C, be adopted
It is 500W, N with N source excitation power2Flow is 1.5 sccm, and equivalent line is ~ 1.0E-7 Torr, and corresponding chamber pressure is 1
~2E-5 Torr.The equivalent line in the source Ga used is 6 ~ 9E-8 Torr, it is therefore preferable to the equivalent beam of ~ 8.5E-8 Torr, Mg
Stream is 0.5 ~ 1E-9 Torr, and V/III ratio is ~ 0.85, and with a thickness of 400 ~ 1500A, doping concentration is 0.7 ~ 1E19/cm3。
(3) nitrogen polarity p-type nitride contact layer 207 is grown
The growth conditions of nitrogen polarity p-type nitride contact layer are as follows: growth temperature is 700 ~ 950 DEG C, it is therefore preferable to ~ 700 DEG C,
Use N source excitation power for 500 W, N2Flow is 1.5 sccm, and equivalent line is ~ 1.0E-7 Torr, corresponding chamber pressure
For 1 ~ 2E-5 Torr.The equivalent line in the source Ga used is 6 ~ 9E-8 Torr, it is therefore preferable to which ~ 8.5E-8 Torr's, Mg is equivalent
Line is 3 ~ 8E-9 Torr, and V/III ratio is ~ 0.85, and with a thickness of 10 ~ 100A, doping concentration is 0.7 ~ 1E20/cm3。
It is changed using the nitrogen polarity electronic barrier layer of above method preparation due to polarity, is caused and multiple quantum well light emitting
Polarization charge becomes negative polarization charge from positive polarisation charge at bed boundary, and energy band is bent downwardly decrease, makes electronic barrier layer to electricity
Sub- blocking capability enhancing, but hole blocking ability is weakened, improve the Droop effect of device.Meanwhile using molecular beam epitaxy skill
Art growth p-type layer keep the interface between multiquantum well region and p-type layer more precipitous, and growth temperature it is low compared with MOCVD technology ~ 100
DEG C or so, it is lighter for the temperature damage of multiquantum well region, it can prevent the indium of multiquantum well region from volatilizing, promote multiquantum well region
Internal quantum efficiency.
Embodiment 2
The present embodiment is different from embodiment 1 and is: p-type nitride layer and p-type nitride contact layer are that gallium is polar.In nitrogen
Device surface can be made more flat using the polar p-type nitride layer of gallium, p-type nitride contact layer after polarity electronic barrier layer
It is whole, be conducive to subsequent chip technology electrode preparation, such as Fig. 5.
In the present embodiment, equally first using conventional MOCVD technique in growth gallium polarity low temperature buffer layer on substrate 100
101, it after the non-nitrating compound layer 102 of gallium polarity, gallium polarity N-type nitride layer 103, gallium polarity multi-quantum well luminescence layer 104, will serve as a contrast
Bottom, which is transferred in molecular beam epitaxy reaction chamber, grows nitrogen polarity electronic barrier layer 205, gallium polarity p-type nitride layer 306 and gallium pole
Property p-type nitride contact layer 307.Wherein nitrogen polarity electronic barrier layer 205 is grown under the conditions of rich nitrogen, and actual conditions can refer to
Embodiment 1, gallium polarity p-type nitride layer 306 and gallium polarity p-type nitride contact layer 307 are grown under the conditions of rich gallium, specifically such as
Under.
(1) gallium polarity p-type nitride layer 306 is grown
The growth conditions of gallium polarity p-type nitride layer are as follows: growth temperature is 750 ~ 1050 DEG C, it is therefore preferable to ~ 870 DEG C, be adopted
It is 500 W with N source excitation power, N2 flow is 1.5 sccm, and equivalent line is ~ 1.0E-7 Torr, and corresponding chamber pressure is
1~2E-5 Torr.The equivalent line in the source Ga used is 9 ~ 15E-8 Torr, it is therefore preferable to which ~ 1.3E-7 Torr's, Mg is equivalent
Line is 0.5 ~ 1.2E-9 Torr, and V/III ratio is ~ 1.3, and with a thickness of 400 ~ 1500A, doping concentration is 0.7 ~ 1E19/cm3。
(2) gallium polarity p-type nitride contact layer 307 is grown
The growth conditions of gallium polarity p-type nitride contact layer are as follows: growth temperature is 700 ~ 950 DEG C, it is therefore preferable to ~ 700 DEG C,
Use N source excitation power for 500W, N2 flow is 1.5 sccm, and equivalent line is ~ 1.0E-7 Torr, corresponding chamber pressure
For 1 ~ 2E-5 Torr.The equivalent line in the source Ga used is 9 ~ 15E-8 Torr, it is therefore preferable to ~ 1.3E-7 Torr, Mg etc.
Effect line is 5 ~ 9E-9 Torr, and V/III ratio is ~ 1.3, and with a thickness of 10 ~ 100A, doping concentration is 0.7 ~ 1E20/cm3。
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. gallium nitride based light emitting diode, successively include: N-type nitride layer, luminescent layer, electronic barrier layer, p-type nitride layer and
P-type nitride contact layer, it is characterised in that: luminescent layer is gallium polarity nitride layer, and electronic barrier layer is nitrogen polarity nitride layer,
Polarization reversal between the electronic barrier layer and luminescent layer reduces band curvature caused by polarization, the N-type nitride layer, hair
Photosphere is formed using MOCVD epitaxy technology, and the electronic barrier layer, p-type nitride layer and p-type nitride contact layer use molecule
Beam epitaxy technology is formed.
2. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the electronic barrier layer is due to polarity
It changes, causes to become negative polarization charge from positive polarisation charge with luminescent layer interface polarization charge, enabled band is bent downwardly
Weaken, enhance electronic barrier layer to electron-blocking capability, but hole blocking ability is weakened.
3. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the N-type nitride layer is gallium pole
Property nitride layer.
4. gallium nitride based light emitting diode according to claim 1, it is characterised in that: p-type nitride layer and p-type nitride
Contact layer is nitrogen polarity, gallium polarity or nitrogen polarity and the polar combination of gallium.
5. the preparation method of gallium nitride based light emitting diode sequentially forms N-type nitride layer, luminescent layer, electronic barrier layer, p-type
Nitride layer and p-type nitride contact layer, it is characterised in that: use MOCVD technology growth N-type nitride layer and luminescent layer, adopt
Nitrogen polarity electronic barrier layer is grown with molecular beam epitaxy technique, the luminescent layer is gallium polarity, and the electronic barrier layer is nitrogen pole
Property, the polarization reversal between the nitrogen polarity electronic barrier layer and gallium polar light emitting layer reduces band curvature caused by polarization.
6. the preparation method of gallium nitride based light emitting diode according to claim 5, it is characterised in that: in the condition of rich nitrogen
Under, nitrogen polarity electronic barrier layer is grown using molecular beam epitaxy technique, i.e. the group V source mole of arrival substrate surface is greater than III
The mole of clan source.
7. the preparation method of gallium nitride based light emitting diode according to claim 5, it is characterised in that: using outside molecular beam
Prolong technology growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer.
8. the preparation method of gallium nitride based light emitting diode according to claim 5, it is characterised in that: in the growth of rich nitrogen
Condition is arrived using molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer
It is greater than the mole of group III source up to the group V source mole of substrate surface.
9. the preparation method of gallium nitride based light emitting diode according to claim 5, it is characterised in that: in the growth of rich gallium
Condition, grows p-type nitride layer and p-type nitride contact layer, i.e. the group III source mole of arrival substrate surface is greater than group V source
Mole.
10. the preparation method of gallium nitride based light emitting diode according to claim 5, it is characterised in that: use molecular beam
The temperature that epitaxy technology grows nitrogen polarity electronic barrier layer is 700 ~ 1000 DEG C.
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| CN201610350604.8A CN105826440B (en) | 2016-05-25 | 2016-05-25 | Gallium nitride based light emitting diode and preparation method thereof |
| PCT/CN2017/085655 WO2017202328A1 (en) | 2016-05-25 | 2017-05-24 | Gallium nitride-based light emitting diode and preparation method therefor |
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| CN105826440B (en) * | 2016-05-25 | 2019-01-15 | 天津三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
| CN106784206B (en) * | 2017-01-23 | 2019-01-08 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode |
| CN108023001B (en) * | 2017-11-30 | 2020-03-10 | 武汉大学 | Etching barrier layer structure, epitaxial wafer comprising same and manufacturing method of epitaxial wafer |
| CN108336193B (en) * | 2017-12-29 | 2020-04-07 | 华灿光电(苏州）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN110808319B (en) * | 2019-11-11 | 2021-08-17 | 中国科学院半导体研究所 | Reverse polarity vertical light emitting diode and preparation method thereof |
| CN111276583A (en) * | 2020-02-12 | 2020-06-12 | 广东省半导体产业技术研究院 | GaN-based LED epitaxial structure, preparation method thereof and light emitting diode |
| CN111599903B (en) * | 2020-06-23 | 2022-03-08 | 东南大学 | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer |
| CN114759124B (en) * | 2022-06-14 | 2022-09-02 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN114823999B (en) * | 2022-06-24 | 2023-02-28 | 江西兆驰半导体有限公司 | LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof |
| CN116190519B (en) * | 2023-04-27 | 2023-06-27 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
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| CN103887385A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Polarity face GaN-based light-emitting device capable of improving light-emitting efficiency |
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| CN103633218B (en) * | 2013-12-04 | 2018-03-06 | 中国科学院半导体研究所 | A kind of Ga Nitride Light emitting device |
| CN105826440B (en) * | 2016-05-25 | 2019-01-15 | 天津三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
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| CN103988321A (en) * | 2011-12-27 | 2014-08-13 | 夏普株式会社 | Method for fabricating three-dimensional gallium nitride structures with planar surfaces and light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces |
| CN103887385A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Polarity face GaN-based light-emitting device capable of improving light-emitting efficiency |
| CN104835893A (en) * | 2015-05-29 | 2015-08-12 | 东南大学 | Nitrogen polar surface LED based on metal nitride semiconductor and preparation method |
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