CN105826410B - A kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace - Google Patents
A kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace Download PDFInfo
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- CN105826410B CN105826410B CN201610307092.7A CN201610307092A CN105826410B CN 105826410 B CN105826410 B CN 105826410B CN 201610307092 A CN201610307092 A CN 201610307092A CN 105826410 B CN105826410 B CN 105826410B
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- chip
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 61
- 238000005520 cutting process Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- 210000002268 wool Anatomy 0.000 claims abstract description 35
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 32
- 235000008216 herbs Nutrition 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 23
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 7
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 7
- 150000001875 compounds Chemical group 0.000 claims abstract description 3
- 239000008367 deionised water Substances 0.000 claims description 27
- 229910021641 deionized water Inorganic materials 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 230000002000 scavenging effect Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 17
- 230000035484 reaction time Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004570 mortar (masonry) Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004965 peroxy acids Chemical class 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
Abstract
The invention discloses a kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace and its application.The preparation method of the present invention comprises the following steps：(1) polysilicon chip with Buddha's warrior attendant wire cutting trace is placed in black silicon processing solution and carries out black silicon processing, Porous Silicon structures are formed in silicon chip surface；(2) polysilicon chip is placed in progress surface acid making herbs into wool in the mixed acid solution of hydrofluoric acid, nitric acid, the cavernous structure of micro-meter scale is formed on surface；(3) polysilicon chip is again placed in black silicon processing solution, Porous Silicon structures is internally formed in micron openings；(4) polysilicon chip is placed in progress alkali making herbs into wool processing in sodium hydroxide solution, micro-nano compound structure of the nanometer inverted pyramid in micron openings is formed on polysilicon chip surface.The etching method of the present invention eliminates the cut on the surface of Buddha's warrior attendant wire cutting polysilicon chip, effectively reduces the reflectivity of silicon chip after making herbs into wool, significantly improves the photoelectric properties of Buddha's warrior attendant wire cutting polycrystalline silicon solar cell.
Description
Technical field
The present invention relates to polycrystalline silicon surface wool manufacturing technical field, more particularly to a kind of polycrystalline for eliminating Buddha's warrior attendant wire cutting trace
Silicon etching method.
Background technology
Buddha's warrior attendant line cutting technology is widely used in cutting brittle non-metallic material.In photovoltaic industry, Buddha's warrior attendant wire cutting skill
Art is commonly used for the section of crystalline silicon.Compared to traditional using mortar cutting technique of the carborundum as abrasive slurries, Buddha's warrior attendant
Line cutting technology has following advantage：1. productivity higher, 2. waste cut materials are few, and the control of 3. slice thicknesses is accurate, 4. machineries
Damage small.Importantly, alreadyd exceed at present using the transfer efficiency of the single crystal silicon solar cell of Buddha's warrior attendant wire cutting technology
19%, reach the level of industry of traditional mortar cutting single crystal silicon solar cell.Therefore, Buddha's warrior attendant line cutting technology is expected to soon
Future become silica-based solar cell mainstream cutting technique.
However, just so far, the polycrystalline silicon solar cell of Buddha's warrior attendant wire cutting can not advise greatly still in experiment development
Mould is produced in batches.To find out its cause, be due to the polysilicon of Buddha's warrior attendant wire cutting at this stage making herbs into wool technology it is still immature.Cut for mortar
For the polysilicon chip cut, the mixed acid making herbs into wool of hydrofluoric acid and nitric acid is most common etching method.It is by mixed acid with
Reaction forms the poroid matte of random micron at the defects of silicon chip surface.This etching method is very thick for damaging layer, and surface is arrived
Place be all defect mortar cutting polysilicon chip for be highly effective.But the polysilicon chip surface of Buddha's warrior attendant wire cutting is thick
Rugosity is relatively low, and surface is gathered periodic micro-meter scale cutting cut.Common acid etching method can not be on such surface
It is upper to form effective suede structure, and the cutting cut of silicon chip surface can not be removed, the surface reflectivity after its making herbs into wool is still super
25% is crossed, can not meet the requirement of industrialized production.
In order to solve this problem, common method has dry and wet etching technology.Wherein, as dry etching technology
Representative, making herbs into wool of the reactive ion etching technology to polysilicon chip is largely effective, but its preparation process is complicated, with high costs, no
Beneficial to its industrialization of propulsion.In contrast, the wet etching technique corroded using metal auxiliary catalysis, its cost is relatively low, and with
Existing industry conjugation is high；But its prior art is still immature, Buddha's warrior attendant wire cutting trace can not also be completely eliminated, and the suede prepared
Face is mostly black silicon matte, its surface recombination is serious, has seriously affected the efficiency of battery.
The content of the invention
In view of the deficiencies in the prior art, the technical problems to be solved by the invention are to provide one kind can be in Buddha's warrior attendant wire cutting
Effective making herbs into wool on polysilicon chip, and the etching method of cutting cut can be eliminated, the polysilicon chip matte after making herbs into wool is uniform, is made
It is standby to be obviously improved into battery, battery efficiency.
To achieve the above object, the present invention provides a kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace, tool
Body, technical solution provided by the invention is as follows：
A kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace, it is characterised in that include the following steps：
The first step, the polysilicon chip with Buddha's warrior attendant wire cutting trace is placed in black silicon processing solution and carries out black silicon processing,
Porous Silicon structures are formed on polysilicon chip surface；
Second step, surface is carried out by being placed in by the polysilicon chip of black silicon processing in the mixed acid solution of hydrofluoric acid, nitric acid
Sour making herbs into wool, the cavernous structure of micro-meter scale is formed on surface；
3rd step, the polysilicon chip Jing Guo surface acid making herbs into wool is again placed in carry out black silicon processing in black silicon processing solution,
Porous Silicon structures are internally formed in micron openings；
4th step, will be placed in progress alkali making herbs into wool processing in sodium hydroxide solution by the polysilicon chip of above-mentioned steps processing,
Micro-nano compound structure of the nanometer inverted pyramid in micron openings is formed on polysilicon chip surface；
5th step, the polysilicon chip after making herbs into wool is soaked in salpeter solution, removes the silver nano-grain of surface attachment.
Preferably, in the first step and the 3rd step, black silicon processing solution is by hydrofluoric acid, hydrogen peroxide, deionized water and nitre
Sour silver configuration forms.
Further, the molar concentration of hydrofluoric acid, hydrogen peroxide and silver nitrate is respectively 0.5-5mol/L, 0.5-5mol/L
And 0.0001-0.001mol/L.
Preferably, in the first step and the 3rd step, the temperature of black silicon processing is 20-60 DEG C, and the time is 1-10 minutes.
Preferably, in the hydrofluoric acid of second step and the mixed acid solution of nitric acid, the body of hydrofluoric acid, nitric acid and deionized water
Product is than being 1:5:4.
Preferably, in second step, the temperature of sour making herbs into wool is 0-20 DEG C, and the time is 2-5 minutes.
Preferably, in the sodium hydroxide solution of the 4th step, the mass fraction of sodium hydroxide is 1-10wt%.
Preferably, in the 4th step, the temperature of alkali making herbs into wool processing is 20-60 DEG C, and the time is 1-10 minutes.
Preferably, in the salpeter solution of the 5th step, the volume ratio of nitric acid and deionized water is 1:1-5, scavenging period are
5-10 minutes.
The polysilicon chip obtained using the polysilicon etching method of above-mentioned elimination Buddha's warrior attendant wire cutting trace is in solar cell
Application.
Compared with prior art, etching method advantage of the invention is：
First, the wet etching technique that preparation method of the invention is corroded using metal auxiliary catalysis is of low cost,
It is high with existing industry conjugation.
Second, preparation method of the invention is by combining the sour isotropic etch of making herbs into wool and the anisotropy rot of alkali making herbs into wool
Erosion, eliminates the cutting cut of Buddha's warrior attendant wire cutting.Wherein, in the first step, Porous Silicon structures is prepared in silicon chip surface, are significantly increased
Adding the surface roughness of silicon chip so that the acid treatment of second step more uniformly can carry out making herbs into wool to whole silicon chip surface,
Form nano/micron pore structure.During sour making herbs into wool, the cavernous structure of silicon chip surface progressively expands, and overlaps.As silicon body corrodes
The increase of amount, shallower cutting cut fades away, and deeper cut then gradually becomes shallower as.Then, class inverted pyramid is being prepared
During structure (black silicon processing then carry out alkali process), the etching extent of silicon body further increases, with the increase of corrosion depth,
The cutting cut of silicon chip surface is completely eliminated.At the same time, the micro-nano combination fine hair face prepared by this method has low anti-
Rate is penetrated, improves the photoelectric properties of battery so that battery efficiency is significantly lifted.
The method of the present invention and the technique effect of generation are described further below with reference to attached drawing, to be fully understood from
The purpose of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is the making herbs into wool schematic diagram of present pre-ferred embodiments.
Fig. 2 is the stereoscan photograph of polycrystalline silicon suede made from present pre-ferred embodiments 1.
Fig. 3 is the stereoscan photograph of polycrystalline silicon suede made from present pre-ferred embodiments 2.
Fig. 4 is the stereoscan photograph of polycrystalline silicon suede made from present pre-ferred embodiments 3.
Fig. 5 is the reflectivity spectrogram corresponding with conventional acid making herbs into wool of polycrystalline silicon suede made from present pre-ferred embodiments.
Fig. 6 prepares Buddha's warrior attendant wire cutting polycrystalline silicon solar cell for the polycrystalline silicon suede made from present pre-ferred embodiments
Process flow chart.
Fig. 7 is Buddha's warrior attendant wire cutting polysilicon sun electricity prepared by the polycrystalline silicon suede made from present pre-ferred embodiments 3
The corresponding current -voltage curve in pond.
Embodiment
The polysilicon etching method of the elimination Buddha's warrior attendant wire cutting trace of present pre-ferred embodiments is as shown in Figure 1.
Embodiment is as follows：
Embodiment 1：
The first step, black silicon processing solution is configured according to following molar concentration：Hydrofluoric acid 0.5mol/L, hydrogen peroxide
0.5mol/L, silver nitrate 0.0001mol/L, which is added in texturing slot, is stirred evenly.There to be Buddha's warrior attendant wire cutting trace
Polysilicon chip be placed in this black silicon processing solution, reaction temperature be 30 DEG C, the reaction time be 10 minutes.To be more after reaction
Crystal silicon chip takes out, and silicon chip surface is cleaned with deionized water.
Second step, configures mixed acid Woolen-making liquid according to volumes below percentage, adds in texturing slot, stir evenly：Hydrogen fluorine
Acid 10%；Nitric acid 50%；Deionized water 40%.It will be placed in this mixed acid solution, react by the polysilicon chip of black silicon processing
Temperature is 8 DEG C, and the reaction time is 2 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is carried out with deionized water
Cleaning.
3rd step, the silicon chip through peracid making herbs into wool is again placed in the black silicon processing solution in the first step, reaction temperature is
30 DEG C, the reaction time is 5 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is cleaned with deionized water.
4th step, configuration quality percentage is the sodium hydroxide solution of 10wt% at room temperature, will pass through three step process
Polysilicon chip be placed in this sodium hydroxide solution, the reaction time be 2 minutes.Then silicon chip surface is carried out clearly with deionized water
Wash.
5th step, it is nitric acid to configure volume ratio at room temperature：Deionized water=1:1 salpeter solution, and by the 4th
Polysilicon chip after step processing is immersed in this salpeter solution and is cleaned, and removes the silver nano-grain of surface attachment, during cleaning
Between be 10 minutes, clean up to obtain the polysilicon for the surface wool manufacturing for removing Buddha's warrior attendant wire cutting trace after taking-up with deionized water
Piece.
Embodiment 2：
The first step, black silicon processing solution is configured according to following molar concentration：Hydrofluoric acid 5mol/L, hydrogen peroxide 2.5mol/
L, silver nitrate 0.001mol/L, which is added in texturing slot, is stirred evenly.By the polysilicon with Buddha's warrior attendant wire cutting trace
Piece is placed in this black silicon processing solution, and reaction temperature is 45 DEG C, and the reaction time is 2 minutes.Polysilicon chip is taken after reaction
Go out, and silicon chip surface is cleaned with deionized water.
Second step, configures mixed acid Woolen-making liquid according to volumes below percentage, adds in texturing slot, stir evenly：Hydrogen fluorine
Acid 10%；Nitric acid 50%；Deionized water 40%.It will be placed in this mixed acid solution, react by the polysilicon chip of black silicon processing
Temperature is 8 DEG C, and the reaction time is 3 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is carried out with deionized water
Cleaning.
3rd step, the silicon chip through peracid making herbs into wool is again placed in the black silicon processing solution in the first step, reaction temperature is
45 DEG C, the reaction time is 2 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is cleaned with deionized water.
4th step, configuration quality percentage is the sodium hydroxide solution of 10wt% at room temperature, will pass through three step process
Polysilicon chip be placed in this sodium hydroxide solution, the reaction time be 3 minutes.Then silicon chip surface is carried out clearly with deionized water
Wash.
5th step, it is nitric acid to configure volume ratio at room temperature：Deionized water=1:1 salpeter solution, and by the 4th
Polysilicon chip after step processing is immersed in this salpeter solution and is cleaned, and removes the silver nano-grain of surface attachment, during cleaning
Between be 10 minutes, clean up to obtain the polysilicon for the surface wool manufacturing for removing Buddha's warrior attendant wire cutting trace after taking-up with deionized water
Piece.
Embodiment 3：
The first step, black silicon processing solution is configured according to following molar concentration：Hydrofluoric acid 2.6mol/L, hydrogen peroxide
1.1mol/L, silver nitrate 0.0002mol/L, which is added in texturing slot, is stirred evenly.There to be Buddha's warrior attendant wire cutting trace
Polysilicon chip be placed in this black silicon processing solution, reaction temperature be 45 DEG C, the reaction time be 5 minutes.To be more after reaction
Crystal silicon chip takes out, and silicon chip surface is cleaned with deionized water.
Second step, configures mixed acid Woolen-making liquid according to volumes below percentage, adds in texturing slot, stir evenly：Hydrogen fluorine
Acid 10%；Nitric acid 50%；Deionized water 40%.It will be placed in this mixed acid solution, react by the polysilicon chip of black silicon processing
Temperature is 8 DEG C, and the reaction time is 3 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is carried out with deionized water
Cleaning.
3rd step, the silicon chip through peracid making herbs into wool is again placed in the black silicon processing solution in the first step, reaction temperature is
45 DEG C, the reaction time is 5 minutes.Polysilicon chip is taken out after reaction, and silicon chip surface is cleaned with deionized water.
4th step, configuration quality percentage is the sodium hydroxide solution of 5wt% at room temperature, by by three step process
Polysilicon chip is placed in this sodium hydroxide solution, and the reaction time is 5 minutes.Then silicon chip surface is carried out clearly with deionized water
Wash.
5th step, it is nitric acid to configure volume ratio at room temperature：Deionized water=1:1 salpeter solution, and by the 4th
Polysilicon chip after step processing is immersed in this salpeter solution and is cleaned, and removes the silver nano-grain of surface attachment, during cleaning
Between be 10 minutes, clean up to obtain the polysilicon for the surface wool manufacturing for removing Buddha's warrior attendant wire cutting trace after taking-up with deionized water
Piece.
As in Figure 2-4, the polysilicon chip handled by the above method, the cutting cut on its surface have been eliminated, surface
Pattern is nested in the micron and nanometer composite structure in micron openings for nanometer inverted pyramid, its surface reflectivity is compared to conventional acid making herbs into wool
Matte be greatly lowered (as shown in Figure 5), average reflectance can be reduced to 15%, meet industrial requirement.
As shown in fig. 6, the Buddha's warrior attendant wire cutting polysilicon chip obtained using 3 making herbs into wool of present pre-ferred embodiments is passed through into tradition
Solar cell preparation process (including diffusion, remove phosphorosilicate glass, deposit anti-reflection layer, silk-screen printing and sintering) be prepared into sun electricity
Pond, its battery performance are as shown in table 1.As shown in Table 1, compared to conventional acid etching method, the gold prepared using the method for the present invention
Firm wire cutting polycrystalline silicon solar cell has obvious advantage on open-circuit voltage and short circuit current flow, significantly improves battery
Photoelectric conversion efficiency.Fig. 7 gives solar cell corresponding current -voltage curve.
The performance parameter contrast for the Buddha's warrior attendant wire cutting polycrystalline silicon solar cell that table 1. is prepared with different mattes
Preferred embodiment of the invention described in detail above.It should be appreciated that the ordinary skill of this area is without wound
The property made work can conceive according to the present invention makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be in the protection domain being defined in the patent claims.
Claims (2)
1. a kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace, it is characterised in that include the following steps：
The first step, the polysilicon chip with Buddha's warrior attendant wire cutting trace is placed in black silicon processing solution and carries out black silicon processing, more
Crystal silicon chip surface forms Porous Silicon structures；Wherein black silicon processing solution is matched somebody with somebody by hydrofluoric acid, hydrogen peroxide, deionized water and silver nitrate
Put and form；The molar concentration of hydrofluoric acid, hydrogen peroxide and silver nitrate is respectively 0.5-5mol/L, 0.5-5mol/L and 0.0001-
0.001mol/L；The temperature of the black silicon processing is 20-60 DEG C, and the time is 1-10 minutes；
Second step, will be placed in progress surface acid system in the mixed acid solution of hydrofluoric acid, nitric acid by the polysilicon chip of black silicon processing
Suede, the cavernous structure of micro-meter scale is formed on surface；The volume ratio of hydrofluoric acid, nitric acid and deionized water is 1:5:4；Sour making herbs into wool
Temperature is 0-20 DEG C, and the time is 2-5 minutes；
3rd step, the polysilicon chip Jing Guo surface acid making herbs into wool is again placed in carry out black silicon processing in black silicon processing solution, micro-
Metre hole is internally formed Porous Silicon structures；The temperature of the black silicon processing is 20-60 DEG C, and the time is 1-10 minutes；
4th step, will be placed in progress alkali making herbs into wool processing in sodium hydroxide solution, more by the polysilicon chip of above-mentioned steps processing
Crystal silicon chip surface forms micro-nano compound structure of the nanometer inverted pyramid in micron openings；The mass fraction of wherein sodium hydroxide is
1-10wt%；The temperature of alkali making herbs into wool processing is 20-60 DEG C, and the time is 1-10 minutes；
5th step, the polysilicon chip after making herbs into wool is soaked in salpeter solution, removes the silver nano-grain of surface attachment；Nitric acid with
The volume ratio of deionized water is 1:1-5, scavenging period are 5-10 minutes.
2. existed using the polysilicon chip that the polysilicon etching method as claimed in claim 1 for eliminating Buddha's warrior attendant wire cutting trace obtains
Application in solar cell.
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