CN105826086B - Flexible all-solid-state supercapacitor and preparation method thereof based on SiC nanowire array - Google Patents
Flexible all-solid-state supercapacitor and preparation method thereof based on SiC nanowire array Download PDFInfo
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- CN105826086B CN105826086B CN201510513078.8A CN201510513078A CN105826086B CN 105826086 B CN105826086 B CN 105826086B CN 201510513078 A CN201510513078 A CN 201510513078A CN 105826086 B CN105826086 B CN 105826086B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Abstract
A kind of preparation method preparing the flexible all-solid-state supercapacitor based on SiC nanowire array, the ultracapacitor include flexible positive electrode, solid electrolyte, diaphragm and flexible negative electrode comprising step in detail below：Technical solution is used by the present invention solves above-mentioned technical problem：The preparation method of the flexible super solid-state capacitor of the SiC nanowire array includes step in detail below：（1）Positive and negative electrode of silicon carbide or N doping or aluminium doping the nanometer silicon carbide linear array as ultracapacitor is grown on flexible carbon cloth, graphene film, and is cut into suitable size；（2）Polyvinyl alcohol that mass percent is 30 ~ 50%, 30 ~ 50% phosphoric acid and 20 ~ 40% water are uniformly mixed under 70 ~ 90 °C electrolyte is made；（3）Electrolyte is respectively applied on flexible positive and negative electrode surface, waits for that body electrolyte is molded in air environment；（4）Diaphragm is put between flexible positive and negative electrode to overlap together, standing and drying can be obtained flexible all-solid-state supercapacitor.For this solid-state super capacitor in the case of bending and distortion, performance does not have significant change.
Description
Technical field
The present invention relates to a kind of preparation methods of the flexible all-solid-state supercapacitor of SiC nanowire array, belong to electrification
Learn energy storage device preparing technical field.
Technical background
Electronics technologies develop to microminaturization, integrated and flexibility direction.Compared with conventional electronics,
Flexible electronic device has weight in the fields such as portable, wearable electronic product and aerospace, biomedicine, information, the energy
The application prospect wanted.In August, 2013, Technology of Flexibility are chosen as one of global ten big Progress ＆ New Products by western medium.In order to meet
These flexible electronic products are widely applied demand, and energy storage device will not only have larger energy and power density, while have
Excellent flexibility and machinability is to meet the requirement of the following flexible integration circuit engineering and manufacturing process rapid development.
Ultracapacitor is a kind of new and effective energy storage device storing charge based on electrode material, and performance is between tradition
Between electrostatic condenser and battery, have that high-energy density, long circulation life, charge and discharge are quick, operating temperature range is wide etc.
Outstanding advantages mainly utilize electric double layer and redox fake capacitance to store electric energy, are expected in fields such as consumer electronics, automobiles
Obtain large-scale application.Ultracapacitor is introduced along with the new electrode materials with nanostructure, nano material is unique
Physics, chemical property make the high-performance of ultracapacitor gradually be improved, and design is with array structure, high conductivity, height
Specific surface area flexibility all-solid-state supercapacitor electrode material increasingly becomes possible.
SiC has that chemical resistance is good, intensity is high, hardness is high, high temperature resistant and the unique excellent property such as electrical and optical
Can, it is research microelectronic component and the ideal novel semiconductor material of opto-electronic device.Adulterate the silicon carbide nanometer line of nitrogen and aluminium
Array is expected to become preferable electrode material for super capacitor because having preferable electric conductivity and high specific surface area.
Invention content
The technical problem to be solved by the present invention is to be received based on nanometer silicon carbide linear array and the silicon carbide of doping nitrogen and aluminium
The excellent physics of nanowire arrays, chemical property, which provide, a kind of preparing the flexible solid super capacitor based on SiC nanowire array
The preparation method of device.
Technical solution is used by the present invention solves above-mentioned technical problem：The flexible super of the SiC nanowire array is solid
The preparation method of state capacitor includes step in detail below：
(1) silicon carbide or N doping or aluminium doping nanometer silicon carbide linear array is grown on flexible carbon cloth, graphene film
The positive and negative electrode as ultracapacitor is arranged, and is cut into suitable size；
(2) it is 30~50% polyvinyl alcohol, 30~50% phosphoric acid or sulfuric acid and 20~40% water by mass percent
It is uniformly mixed at 70~90 DEG C and electrolyte is made；
(3) electrolyte is respectively applied on flexible positive and negative electrode surface, waits for that body electrolyte is molded in air environment；
(4) it is put into diaphragm between flexible positive and negative electrode to overlap together, standing and drying can be obtained flexible all solid state super
Capacitor.
Diaphragm used in the step (4) is hydrophily diaphragm.
Compared with the prior art, the advantages of the present invention are as follows：
Compared with the capacitor for the SiC nanowire array not adulterated reported, the present invention realizes nitrogen and aluminium doping
Flexible all-solid-state supercapacitor preparation
Description of the drawings
Fig. 1 is the structure principle chart of the ultracapacitor device obtained by the present invention；
Fig. 2 is that cyclic voltammetric of the SiC ultracapacitors under different scanning rates obtained by the embodiment of the present invention one is bent
Line；
Fig. 3 is the constant current charge-discharge curve of the SiC ultracapacitors obtained by the embodiment of the present invention one；
Fig. 4 is that the SiC ultracapacitors obtained by the embodiment of the present invention one are not bending and bending 90 degree, 180 degree and torsion
Cyclic voltammetry curve comparison diagram in the case of 60 degree, 120 degree, 240 degree bent；
Fig. 5 is that cyclic voltammetric of the SiC ultracapacitors under different scanning rates obtained by the embodiment of the present invention two is bent
Line；
Fig. 6 is the constant current charge-discharge curve of the SiC ultracapacitors obtained by the embodiment of the present invention two；
Specific implementation mode
Below in conjunction with attached drawing embodiment, the present invention is described in further detail.
Embodiment one
(1) chemical vapour deposition technique is used to grow the nanometer silicon carbide linear array of N doping on carbon cloth first, (2) are simultaneously cut out
It is cut into suitable size, as positive and negative electrode, (2) prepare PVA/H3PO3Then drop is dropped in and is received with SiC by hydrogel solution
On the carbon cloth of rice noodles, one layer of hydrogel solution of spin coating and drying；(3) water-soluble diaphragm is placed in two obtained in previous step
It among plate electrode-solid electrolyte positive and negative pole material, symmetrically fits together, device assembling is completed after standing and drying.Institute
Cyclic voltammetry curve of the ultracapacitor obtained under different scanning rates is as shown in Fig. 2, from top to bottom, sweep speed is successively
For：30、20、10、5、2v/s；Obtained ultracapacitor constant current charge-discharge curve is as shown in figure 3, charge and discharge from left to right
Electric current density is followed successively by：28、14、7、2、1mA/cm-2, obtained SiC ultracapacitors do not bend and bend 90 degree,
Cyclic voltammetry curve in the case of 60 degree, 120 degree, 240 degree of 180 degree and distortion is as shown in Figure 4, it is seen that this solid-state super capacitor
In the case of bending and distortion, performance does not have significant change.
Embodiment two
(1) chemical vapour deposition technique is used to grow the nanometer silicon carbide linear array of aluminium doping on carbon cloth first, (2) are simultaneously cut out
It is cut into suitable size, as positive and negative electrode, (2) prepare PVA/ sulfuric acid hydrogel solutions, then drop in drop and received with SiC
On the carbon cloth of rice noodles, one layer of hydrogel solution of spin coating and drying；(3) water-soluble diaphragm is placed in two obtained in previous step
It among plate electrode-solid electrolyte positive and negative pole material, symmetrically fits together, device assembling is completed after standing and drying.Institute
Cyclic voltammetry curve of the ultracapacitor obtained under different scanning rates is as shown in figure 5, from top to bottom, sweep speed is successively
For：20、10、5、2、1v/s；Obtained ultracapacitor constant current charge-discharge curve is as shown in fig. 6, charge and discharge from left to right
Electric current density is followed successively by：70、35、15、5、2mA/cm-2。
Claims (4)
1. a kind of preparation method preparing the flexible all-solid-state supercapacitor based on SiC nanowire array, the ultracapacitor
Including flexible positive electrode, solid electrolyte, diaphragm and flexible negative electrode comprising step in detail below：
(1) solid electrolyte is respectively applied on flexible positive and negative electrode surface, waits for that solid electrolyte is molded in air environment；
(2) it is put into diaphragm between flexible positive and negative electrode to overlap together, standing and drying, you can obtain flexible all solid state super electricity
Container；
The positive and negative electrode used in the step (1) be the N doping being grown on flexible carbon cloth or graphene film or aluminium mix
Miscellaneous nanometer silicon carbide linear array.
2. a kind of system preparing the flexible all-solid-state supercapacitor based on SiC nanowire array according to claim 1
Preparation Method, which is characterized in that the solid electrolyte used in the step (1) is the polyethylene that mass percent is 30~50%
Alcohol, 30~50% phosphoric acid and 20~40% water are uniformly mixed manufactured hydrogel at 70~90 DEG C.
3. a kind of system preparing the flexible all-solid-state supercapacitor based on SiC nanowire array according to claim 1
Preparation Method, which is characterized in that the diaphragm used in the step (2) is hydrophily diaphragm.
4. a kind of system preparing the flexible all-solid-state supercapacitor based on SiC nanowire array according to claim 1
Preparation Method, which is characterized in that the flexibility, which refers to entire device, to be bent in 0~180 degree, distorted within the scope of 0~360 degree
Performance does not change.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107833755A (en) * | 2017-08-28 | 2018-03-23 | 青岛科技大学 | A kind of high-performance SiC@Fe2O3Hybrid supercapacitor negative material |
| CN109904004B (en) * | 2019-01-30 | 2020-10-09 | 宁波工程学院 | Preparation method of SiC nanowire array film and application of SiC nanowire array film in supercapacitor electrode |
| CN111710534B (en) * | 2020-06-24 | 2021-12-21 | 青岛大学 | Preparation method of asymmetric solid-state supercapacitor based on flexible silicon carbide/porous graphene/manganese dioxide porous nanocomposite |
| CN112614705B (en) * | 2020-11-03 | 2022-07-01 | 宁波工程学院 | Preparation method of zigzag nitrogen-doped SiC nanowires growing on carbon fiber cloth |
| CN112614699B (en) * | 2020-11-03 | 2022-06-17 | 宁波工程学院 | Zigzag nitrogen-doped SiC nanowire-based high-temperature supercapacitor |
| CN114783781B (en) * | 2022-05-30 | 2023-07-21 | 武汉楚能电子有限公司 | Hybrid supercapacitor based on silicon carbide unit layer material |
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| CN102509635A (en) * | 2011-10-31 | 2012-06-20 | 华中科技大学 | Preparation method of flexible super capacitor based on carbon cloth |
| CN103219164A (en) * | 2013-04-19 | 2013-07-24 | 中国科学院物理研究所 | Ultra-thin, self-supporting, flexible and all-solid-state super capacitor and manufacturing method thereof |
| CN103337376A (en) * | 2013-05-06 | 2013-10-02 | 中国科学院物理研究所 | All-solid-state winding type supercapacitor and production method thereof |
| KR20140011485A (en) * | 2012-05-30 | 2014-01-29 | 고려대학교 산학협력단 | Flexible supercapacitor containing bacteria nanocellulose paper with coating carbonnanotube and solid electrolyte and the preparation thereof |
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Patent Citations (4)
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| CN102509635A (en) * | 2011-10-31 | 2012-06-20 | 华中科技大学 | Preparation method of flexible super capacitor based on carbon cloth |
| KR20140011485A (en) * | 2012-05-30 | 2014-01-29 | 고려대학교 산학협력단 | Flexible supercapacitor containing bacteria nanocellulose paper with coating carbonnanotube and solid electrolyte and the preparation thereof |
| CN103219164A (en) * | 2013-04-19 | 2013-07-24 | 中国科学院物理研究所 | Ultra-thin, self-supporting, flexible and all-solid-state super capacitor and manufacturing method thereof |
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Non-Patent Citations (1)
| Title |
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| Performance characteristics of supercapacitor electrodes made of silicon carbide nanowires grown on carbon fabric;Lin Gu, et al;《Journal of Power Sources》;20130618;第243卷;摘要，文章第649-650页 * |
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