CN105817991A - Chemical mechanical grinding method - Google Patents
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- CN105817991A CN105817991A CN201510005019.XA CN201510005019A CN105817991A CN 105817991 A CN105817991 A CN 105817991A CN 201510005019 A CN201510005019 A CN 201510005019A CN 105817991 A CN105817991 A CN 105817991A
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Abstract
The invention discloses a chemical mechanical grinding method which includes the following steps: a wafer to be ground is arranged on a first grinding pad; first grinding is conducted the wafer by first grinding liquid; the first grinding liquid has a first pH value, so the wafer to be ground can be separated from the first grinding pad; first cleaning liquid is sprayed on the surface of the wafer to be ground to conduct first cleaning; the first cleaning liquid has a second pH value; an absolute value of a difference between the first and second Ph values is no more than 1; after the first cleaning, the wafer to be ground is placed on a second grinding pad; second grinding is conducted to the wafer to be ground via second grinding liquid; the second grinding liquid has a third pH value; and an absolute value of a difference between the third pH value and the second pH value is no more than 1. Acid-base conflict can be prevented for the surface of the wafer to be ground, so plenty of microcosmic particles can be prevented from appearing on the surface of the wafer to be ground; and scraps to the surface of the wafer to be ground by the microcosmic particles during the second grinding can be avoided.
Description
Technical field
The present invention relates to field of semiconductor fabrication technology, particularly to a kind of chemical and mechanical grinding method.
Background technology
Along with developing rapidly of super large-scale integration, integrated circuit fabrication process becomes to become increasingly complex and pleasantly surprised, in order to improve integrated level, reduce manufacturing cost, the size of semiconductor device reduces day by day, plane routing is difficult to meet the requirement of semiconductor device high density distribution, the integration density using polylaminate wiring technique to improve semiconductor device has become one of development trend, wherein, cmp (CMP, ChemicalMechanicalPolishing) technology can realize the planarization of whole wafer, it it is one of important process step in semiconductor fabrication.
Equipment used in cmp mainly includes grinding head (head) and grinding table (platen), and described grinding table is provided with grinding pad (pad).In chemical mechanical planarization process, treat that to be ground the facing down of the wafer of cmp is fixed on grinding table, grinding head is downwardly against the back side of wafer to be ground, grinding head and each autorotation of grinding table are ground, chemical mechanical planarization process needs be continuously added lapping liquid (slurry), along with the relative motion between grinding pad and wafer to be ground and be continuously added lapping liquid, it is achieved the grinding of wafer to be ground, form smooth surface.Chemical mechanical planarization process is mainly regulated the speed of grinding by the pressure (down-force) of regulation grinding head and the selectivity of lapping liquid.
But prior art is after treating grinding crystal wafer and carrying out cmp, the pattern of crystal column surface to be ground is poor, defect is many, such as, crystal column surface to be ground has cut (scratches), granule (particles) and residual slurry (slurryresidues).
Wherein, the granule of crystal column surface to be ground and residual slurry are in follow-up cleaning process, being easier to clean and remove, the cut of crystal column surface to be ground is then very difficult to remove, and the cut of crystal column surface the most to be ground is to cause producing the one of the main reasons that yield reduces.
Summary of the invention
The present invention solve problem be in prior art wafer to be ground after carrying out cmp, the problem that surface there will be scratch.
For solving the problems referred to above, the present invention provides a kind of chemical and mechanical grinding method, including: wafer to be ground is provided；Being placed on the first grinding pad by described wafer to be ground, use the first lapping liquid that described grinding crystal wafer carries out the first grinding, wherein, described first lapping liquid has the first pH value；After described first grinds, make wafer to be ground and the first grinding pad separate, spray the first cleanout fluid to described crystal column surface to be ground and carry out the first cleaning, wherein, described first cleanout fluid has the second pH value, and the absolute value of the difference of described second pH value and the first pH value is less than or equal to 1；After described first cleans, described wafer to be ground is placed on the second grinding pad, uses the second lapping liquid described wafer to be ground to be carried out the second grinding, wherein, described second lapping liquid has the 3rd pH value, and the absolute value of the difference of described 3rd pH value and the second pH value is less than or equal to 1.
Optionally, it is provided that grinder station, use grind before cleanout fluid the input area of described board to be ground be ground the absolute value of the pH value of cleanout fluid and the difference of the first pH value before front cleaning, and described grinding be less than or equal to 1；Before being placed on the first grinding pad by described crystal column surface to be ground, described wafer to be ground is placed on the input area of grinder station.
Optionally, described first it is ground to cmp；Described second is ground to cmp；And described first grind grinding rate more than described second grind grinding rate；The hardness of described first grinding pad is more than the hardness of described second grinding pad.
Optionally, described first pH value is 3 to 4；Described second pH value is 3 to 4；Described 3rd pH value is 3 to 4.
Optionally, described first cleanout fluid is the first lapping liquid without abrasive grains；Or, described first cleanout fluid is the first lapping liquid without abrasive grains that with the addition of hydrogen peroxide.
Optionally, described first cleanout fluid is ethanedioic acid solution or oxalic acid solution.
Optionally, described first pH value is 9 to 11；Described second pH value is 9 to 11；Described 3rd pH value is 9 to 11.
Optionally, while described crystal column surface to be ground is carried out the first cleaning, described first grinding pad surface is carried out the first cleaning.
Optionally, the described first duration cleaned was less than or equal to 5 seconds.
Optionally, after described first grinding pad is carried out the first cleaning, further comprise the steps of: and spray the second cleanout fluid to described first grinding pad and carry out the second cleaning, wherein, described second cleanout fluid has the 4th pH value, and the absolute value of the difference of described 4th pH value and the second pH value is less than or equal to 1.
Optionally, further comprise the steps of: after described second grinds, described wafer to be ground and the second grinding pad is made to separate, spray the 3rd cleanout fluid to described crystal column surface to be ground and carry out the 3rd cleaning, wherein, described 3rd cleanout fluid has the 5th pH value, and the absolute value of the difference of described 5th pH value and the 3rd pH value is less than or equal to 1；After the described 3rd cleans, described wafer to be ground is placed on the 3rd grinding pad, uses the 3rd lapping liquid described wafer to be ground to be carried out the 3rd grinding, wherein, described 3rd lapping liquid has the 6th pH value, and the absolute value of the difference of described 6th pH value and the 5th pH value is less than or equal to 1.
Optionally, described first pH value, the 3rd pH value and the 6th pH value are identical.
Optionally, while described crystal column surface to be ground is carried out the 3rd cleaning, described second grinding pad is carried out the 3rd cleaning.
Optionally, after described second grinding pad is carried out the 3rd cleaning, further comprise the steps of: and carry out the 4th cleaning, wherein to described second grinding pad sprinkling the 4th cleanout fluid, described 4th cleanout fluid has the 7th pH value, and the absolute value of the difference of described 7th pH value and the 5th pH value is less than or equal to 1.
Optionally, after carrying out the described 3rd and grinding, described wafer to be ground and the 3rd grinding pad is made to separate, the 5th cleanout fluid is sprayed to described crystal column surface to be ground, described wafer to be ground and the 3rd grinding pad are carried out the 5th cleaning, wherein, described 5th cleanout fluid has the 8th pH value, and the absolute value of the difference of described 8th pH value and the 6th pH value is less than or equal to 1.
Optionally, it is provided that grinder station, use grind after cleanout fluid the output area of described grinder station be ground the absolute value of the pH value of cleanout fluid and the difference of the 8th pH value after post processing, and described grinding be less than or equal to 1；After carrying out the described 5th and cleaning, described wafer to be ground is placed on the output area of grinder station.
Optionally, further comprise the steps of: employing and scrub liquid described crystal column surface to be ground is scrubbed, and described in scrub the pH value of liquid and grind after the absolute value of difference of pH value of cleanout fluid less than or equal to 1.
Optionally, described wafer to be ground includes: substrate and be positioned at the dielectric layer of substrate surface, is formed with groove in described dielectric layer；Fill full described groove and be covered in the gate electrode film of dielectric layer surface, and described gate electrode film top is higher than dielectric layer surface.
Optionally, described first the gate electrode film removing segment thickness is ground；Described second grinds the removal gate electrode film higher than dielectric layer surface, forms the grid layer being positioned at described groove；Described 3rd grinds dielectric layer and the grid layer removing segment thickness.
Compared with prior art, technical scheme has the advantage that
In the technical scheme of the chemical and mechanical grinding method that the present invention provides, being placed on the first grinding pad by described wafer to be ground, use the first lapping liquid that described grinding crystal wafer carries out the first grinding, wherein, described first lapping liquid has the first pH value；After described first grinds, make wafer to be ground and the first grinding pad separate, spray the first cleanout fluid to described crystal column surface to be ground and carry out the first cleaning, wherein, described first cleanout fluid has the second pH value, and the absolute value of the difference of described second pH value and the first pH value is less than or equal to 1.When crystal column surface to be ground has solution, itself having microscopic particles in solution, described microscopic particles is mutually exclusive or attracts, thus forms charged layer, therefore forms zeta equipotential layer at crystal column surface to be ground accordingly；Owing to the pH value knots modification of crystal column surface to be ground is less, therefore the zeta equipotential layer preventing crystal column surface to be ground is thickening, the microscopic particles preventing crystal column surface to be ground dramatically increases, it is to avoid described microscopic particles is treated grinding crystal wafer surface in the second follow-up process of lapping and caused scratch.
Simultaneously, after cleaning described first, described wafer to be ground is placed on the second grinding pad, use the second lapping liquid that described wafer to be ground is carried out the second grinding, wherein, described second lapping liquid has the 3rd pH value, and the absolute value of the difference of described 3rd pH value and the second pH value is less than or equal to 1.In like manner, prevent the pH value sudden change of the crystal column surface to be ground when second grinds, prevent crystal column surface to be ground from producing substantial amounts of microscopic particles, it is to avoid described microscopic particles is treated grinding crystal wafer surface in the second process of lapping and caused scratch.To this end, the present invention can improve in chemical mechanical planarization process, the problem that crystal column surface to be ground is scraped off, improves the interface quality of crystal column surface to be ground after grinding.
Further, it is provided that grinder station, use grind before cleanout fluid the input area of described board to be ground be ground the absolute value of the pH value of cleanout fluid and the difference of the first pH value before front cleaning, and described grinding be less than or equal to 1.Same, it is possible to prevent crystal column surface generation soda acid conflict to be ground, it is to avoid produce substantial amounts of microscopic particles at crystal column surface to be ground.
Further, after the first grinding pad is carried out the first cleaning, further comprise the steps of: and spray the second cleanout fluid to described first grinding pad and carry out the second cleaning, wherein, described second cleanout fluid has the 4th pH value, and the absolute value of the difference of described 4th pH value and the second pH value is less than or equal to 1.In like manner, the present invention, it can be avoided that the first grinding pad surface occurs soda acid conflict, prevents from producing substantial amounts of microscopic particles on the first grinding pad surface, it is to avoid when grinding other wafers on the first grinding pad, other wafers are caused damage.
Further, after described second grinds, described wafer to be ground and the second grinding pad is made to separate, spray the 3rd cleanout fluid to described crystal column surface to be ground and carry out the 3rd cleaning, wherein, described 3rd cleanout fluid has the 5th pH value, and the absolute value of the difference of described 5th pH value and the 3rd pH value is less than or equal to 1；After the described 3rd cleans, described wafer to be ground is placed on the 3rd grinding pad, uses the 3rd lapping liquid described wafer to be ground to be carried out the 3rd grinding, wherein, described 3rd lapping liquid has the 6th pH value, and the absolute value of the difference of described 6th pH value and the 5th pH value is less than or equal to 1.The present invention provides three step grinding technics, and avoid when treating grinding crystal wafer and carrying out the 3rd grinding, crystal column surface to be ground is avoided to produce substantial amounts of microscopic particles, improve crystal column surface quality to be ground after the 3rd grinding, prevent microscopic particles from treating grinding crystal wafer surface in the 3rd process of lapping and cause scratch.
Further, after carrying out the 3rd grinding, further comprise the steps of: employing and scrub liquid described crystal column surface to be ground is scrubbed, and described in scrub the pH value of liquid and grind after the absolute value of difference of pH value of cleanout fluid less than or equal to 1.The present invention can treat grinding crystal wafer surface and cause damage during avoiding further scrubbing.
Accompanying drawing explanation
The semiconductor structure schematic diagram of the chemical mechanical planarization process that Fig. 1 to Fig. 8 provides for one embodiment of the invention.
Detailed description of the invention
From background technology, prior art is after treating grinding crystal wafer and carrying out cmp, and crystal column surface to be ground has cut, and described cut causes the production yield of semiconductor structure low.
It has been investigated that, common lapping liquid includes abrasive material, reactant and deionized water, and abrasive material is generally tripoli or alum clay.Microscopic particles (microscopicparticles) itself can be produced in described lapping liquid, when described particulate matter is suspended in lapping liquid, mutually exclusive or attraction between granule, make to be formed charged layer in lapping liquid, thus forming zeta current potential at crystal column surface to be ground, described zeta current potential is positive potential or nagative potential.
When treating grinding crystal wafer and being ground, at least comprising the following steps: step S1, treat grinding crystal wafer surface and carry out the first grinding, the pH value (hydrogen ionexponent, HydrogenIonConcentration) of the first lapping liquid is 3 to 4 or 9 to 11；Step S2, after carrying out the first grinding, described crystal column surface to be ground is carried out the first cleaning, the first cleanout fluid is deionized water, and the pH value of deionized water is about 6；Step S3, after carrying out the first cleaning, treat grinding crystal wafer surface and carry out the second grinding, the pH value of the second lapping liquid is 3 to 4 or 9 to 11.
In other embodiments, even treating grinding crystal wafer and carry out three step grindings, and after second grinds before the 3rd grinding, treat grinding crystal wafer surface and carry out the second cleaning, the second cleanout fluid is deionized water.
Morphology analysis discovery is carried out treating grinding crystal wafer surface, after second grinds, the scratch of crystal column surface to be ground before the scratch (scratches) that crystal column surface to be ground is subject to the significantly more than second grinding；And when using three step grinding technics, after the 3rd grinds, the scratch that crystal column surface to be ground is subject to is the scratch of crystal column surface to be ground after being significantly more than the second grinding.
Research finds, the reason causing this problem to occur is: the pH value of crystal column surface to be ground constantly changes, and in different processing steps, the pH value difference of crystal column surface to be ground is bigger；When there is bigger change in the pH value of described crystal column surface to be ground, crystal column surface generation soda acid to be ground conflict (pHShock), when crystal column surface to be ground has lapping liquid or cleanout fluid, the zeta equipotential layer of crystal column surface to be ground, by thickening, makes the microscopic particles quantity of crystal column surface to be ground dramatically increase accordingly.During the second grinding technics, owing to the microscopic particles quantity of described crystal column surface to be ground dramatically increases, described microscopic particles will treat crystal column surface quality to be ground after grinding crystal wafer surface causes serious scratch, impact to grind.
Further study show that, when the pH value knots modification of crystal column surface to be ground is less than or equal to 1, when crystal column surface to be ground has lapping liquid or cleanout fluid, the thickness of the zeta equipotential layer of crystal column surface to be ground is kept approximately constant, therefore, it is possible to avoid producing substantial amounts of microscopic particles at crystal column surface to be ground.
To this end, the present invention provides a kind of chemical and mechanical grinding method, it is provided that wafer to be ground；Being placed on the first grinding pad by described wafer to be ground, use the first lapping liquid that described grinding crystal wafer carries out the first grinding, wherein, described first lapping liquid has the first pH value；After described first grinds, make wafer to be ground and the first grinding pad separate, spray the first cleanout fluid to described crystal column surface to be ground and carry out the first cleaning, wherein, described first cleanout fluid has the second pH value, and the absolute value of the difference of described second pH value and the first pH value is less than or equal to 1；After described first cleans, described wafer to be ground is placed on the second grinding pad, uses the second lapping liquid described wafer to be ground to be carried out the second grinding, wherein, described second lapping liquid has the 3rd pH value, and the absolute value of the difference of described 3rd pH value and the second pH value is less than or equal to 1.The present invention avoids crystal column surface generation soda acid conflict to be ground, thus prevents from causing the microscopic particles of crystal column surface to be ground to increase due to soda acid conflict, and then avoids the second grinding technics to treat grinding crystal wafer causing scratch.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings the specific embodiment of the present invention is described in detail.
The semiconductor structure schematic diagram of the chemical mechanical planarization process that Fig. 1 to Fig. 8 provides for one embodiment of the invention.
With reference to Fig. 1, it is provided that wafer to be ground.
As a example by the present embodiment forms the grid of semiconductor structure after carrying out cmp.
Corresponding wafer to be ground includes: substrate 100 and be positioned at the dielectric layer 101 on substrate 100 surface, is formed with groove in described dielectric layer 101；Described dielectric layer 101 surface, channel bottom and sidewall surfaces are formed with work function film 102；Described work function film 102 surface is formed with gate electrode film 103, and described gate electrode film 103 fills full described groove and gate electrode film 103 top higher than dielectric layer 101 surface.
In other embodiments, wafer to be ground can not include work function film 102.
Wherein, the material of described substrate 100 is silicon, germanium, SiGe, carborundum, GaAs or gallium indium；Described substrate 100 can also be the silicon substrate on insulator or the germanium substrate on insulator；The material of described dielectric layer 101 is silicon oxide, silicon nitride or silicon oxynitride；The material of described work function film 102 is Ti, Ta, TiN, TaN or WN；The material of described gate electrode film 103 is polysilicon, copper, aluminum or tungsten.
In the present embodiment, the material of described substrate 100 is silicon, and the material of dielectric layer 101 is silicon oxide, and the material of work function film 102 is tungsten nitride (WN), and the material of gate electrode film 103 is aluminum.
Refer to Fig. 2, be placed on the first grinding pad by described wafer to be ground, use the first lapping liquid that described wafer to be ground carries out the first grinding, wherein, described first lapping liquid has the first pH value.
Described first grinding technics is cmp, and described first grinding pad is hard grinding pad (hardpad).
First grinding technics is the rough lapping stage, concrete, and the first grinding technics in the present embodiment grinds the gate electrode film 103 removing segment thickness so that the thinner thickness of remaining gate electrode film 103.Described first grinding technics has bigger grinding rate to gate electrode film 103, removes the gate electrode film 103 with larger thickness so that quickly grind, improves the efficiency of cmp.
In a specific embodiment, after first grinds, it it is 500 angstroms to 5000 angstroms higher than the thickness of the gate electrode film 103 of dielectric layer 101.
Described first lapping liquid includes that deionized water, chemical assistant and the first abrasive grains, described first lapping liquid can be acid solution or alkaline solution.
In the present embodiment, the first pH value that the first lapping liquid has is 3 to 4, and corresponding chemical assistant includes one or more in carbon dioxide, citric acid or oxalic acid.
In another embodiment, the first pH value that the first lapping liquid has is 9 to 11, and corresponding chemical assistant includes one or more in potassium hydroxide, sodium hydroxide, Lithium hydrate or ammonia.
In the present embodiment, being moved by wafer to be ground before the first grinding pad, wafer to be ground can be placed on the input area of grinder station, is then moved to the first grinding pad by wafer to be ground.
For this, the present embodiment before being placed on the input area of grinder station by wafer to be ground, using cleanout fluid before grinding that the input area of described grinder station is ground front cleaning, before described grinding, the absolute value of the difference of pH value and first pH value of cleanout fluid is less than or equal to 1.In the present embodiment, the first pH value is 3 to 4, and the corresponding pH value grinding front cleanout fluid is 3 to 4；In another embodiment, the first pH value is 9 to 11, and the corresponding pH value grinding front cleanout fluid is 9 to 11.
Being moved before the first grinding pad from grinder station by wafer to be ground, the pH value of crystal column surface solution to be ground is almost identical with the pH value grinding front cleanout fluid；When being moved to the first grinding pad by described wafer to be ground, after described wafer to be ground sprays the first lapping liquid, pH value and first pH value of crystal column surface to be ground are identical.
Owing to before grinding, the pH value of cleanout fluid and the difference absolute value of the first pH value are less than or equal to 1, it is prevented from crystal column surface to be ground for this and soda acid collision problem occurs, prevent owing to crystal column surface to be ground occurs that soda acid conflict causes the amount of the microscopic particles (microscopicparticles) in crystal column surface solution to be ground to increase, thus avoid that the first process of lapping occurring, too much microscopic particles is treated grinding crystal wafer surface and caused scratch.
Refer to Fig. 3, after described first grinds, wafer to be ground and the first grinding pad is made to separate, spray the first cleanout fluid to described wafer to be ground and carry out the first cleaning 10, wherein, described first cleanout fluid has the second pH value, and the absolute value of the difference of described second pH value and the first pH value is less than or equal to 1.
Concrete, in the present embodiment, gate electrode film 103 surface sprinkling the first cleanout fluid after the first grinding carries out the first cleaning 10.After grinding due to first, gate electrode film 103 surface has grinding residue, if not by described grinding removing residues, then in follow-up the second process of lapping carried out, the second follow-up grinding can be had undesirable effect by described grinding residue, for this present embodiment before carrying out the second grinding, treat grinding crystal wafer surface and carry out the first cleaning 10, remove described grinding residue.
Due to before carrying out the first cleaning 10; pH value and first pH value on gate electrode film 103 surface are identical; if the second pH value and the first pH value difference are bigger; then gate electrode film 103 surface can produce soda acid collision problem; causing producing more microscopic particles on gate electrode film 103 surface, described in the second follow-up process of lapping, microscopic particles can be treated grinding crystal wafer surface and cause scratch.
To this end, the absolute value of the difference of the second pH value and the first pH value described in the present embodiment is less than or equal to 1, it is to avoid soda acid collision problem occurs on gate electrode film 103 surface, thus prevents from producing on gate electrode film 103 surface microscopic particles.
In the present embodiment, described first pH value is 3 to 4, and the second pH value is 3 to 4, and such as, the second pH value is 3.3,3.5 or 3.8.Described first cleanout fluid can be not contain the first lapping liquid of the first abrasive grains, do not contain the first abrasive grains and with the addition of the first lapping liquid or other suitable chemical solutions of hydrogen peroxide, such as, the first cleanout fluid can be ethanedioic acid solution or oxalic acid solution
In other embodiments, the first pH value is 9 to 11, and the second pH value is 9 to 11, and such as, the second pH value is 9.5,10 or 10.5.
While described crystal column surface to be ground is carried out the first cleaning 10, described first grinding pad is carried out the first cleaning 10, remove the grinding residue on the first grinding pad surface, prevent follow-up when grinding other wafers on the first grinding pad, other wafers to be ground are caused damage.
Described first cleaned the duration of 10 less than or equal to 5 seconds.Owing to the first cleaning 10 is limited to the cleaning performance of the first grinding pad, after described first grinding pad is carried out the first cleaning 10, step can also be included: spray the second cleanout fluid to described first grinding pad and carry out the second cleaning, wherein said second cleanout fluid has the 4th pH value, and the absolute value of the difference of described 4th pH value and the second pH value is less than or equal to 1.
Owing to the absolute value of the 4th pH value and the difference of the second pH value is less than or equal to 1, it is prevented from the first grinding pad surface and produces soda acid conflict, avoid the first grinding pad surface to produce microscopic particles accordingly, thus prevent from follow-up other wafers to be ground being caused scratch when being ground on the first grinding pad.
With reference to Fig. 4, after treating grinding crystal wafer and carrying out the first cleaning, described wafer to be ground is placed on the second grinding pad, use the second lapping liquid that described wafer to be ground is carried out the second grinding, wherein, described second lapping liquid has the 3rd pH value, and the absolute value of the difference of described 3rd pH value and the second pH value is less than or equal to 1.
Described second is ground to cmp, and the second grinding rate ground is less than the grinding rate of the first grinding, and the second grinding pad is soft grinding pad (softpad), and the hardness of the second grinding pad is less than the hardness of the first grinding pad.
Concrete, the second grinding technics in the present embodiment grinds the gate electrode film 103 (with reference to Fig. 3) and work function film 102 (with reference to Fig. 3) removed higher than dielectric layer 101 surface, formation is positioned at the work-function layer 112 of channel bottom and sidewall surfaces, is positioned at the grid layer 113 on work-function layer 112 surface, and described grid layer 113 fills full described groove.Owing to the second grinding rate ground is less, therefore the flattening effect of the second grinding technics is more preferable than the flattening effect of the first grinding technics.
Described second lapping liquid includes deionized water, chemical assistant and the second abrasive grains.In the second process of lapping, crystal column surface to be ground is covered by the second lapping liquid.Owing to the second lapping liquid itself having microscopic particles, mutually exclusive or attraction between described microscopic particles, making to be formed in the second lapping liquid charged layer, thus form zeta equipotential layer at crystal column surface to be ground, the current potential of described zeta equipotential layer is positive potential or nagative potential.
If soda acid collision problem occurs in crystal column surface environment to be ground, then under the influence of soda acid conflicts, the zeta equipotential layer of crystal column surface to be ground is by thickening, and the microscopic particles amount of material of crystal column surface the most to be ground will increase；In the second process of lapping, described microscopic particles material will be treated grinding crystal wafer surface and cause scratch.Specific in the present embodiment, if soda acid collision problem occurs in gate electrode film 103 surface in the second process of lapping, gate electrode film 103 surface will be produced more microscopic particles, thus scratch is caused on gate electrode film 103 surface.
Due to before carrying out the second grinding, pH value and second pH value on gate electrode film 103 surface are close, for this, in order to avoid the zeta equipotential layer thickness on gate electrode film 103 surface increases, the microscopic particles content of material preventing gate electrode film 103 surface increases, and in the present embodiment, the absolute value of the difference of the 3rd pH value and the second pH value is less than or equal to 1.
In one embodiment, when described second pH value is 3 to 4, described 3rd pH value is 3 to 4, and such as, the 3rd pH value is 3.2,3.5 or 3.8.In another embodiment, when described second pH value is 9 to 11, described 3rd pH value is 9 to 11, and such as, the 3rd pH value is 9.5,10 or 10.5.
In the present embodiment, the pH value of described second lapping liquid and the pH value of the first lapping liquid are identical, and the i.e. the 3rd pH value and the first pH value are identical.
With reference to Fig. 5, after described second grinds, described wafer to be ground and the second grinding pad is made to separate, spray the 3rd cleanout fluid to described wafer to be ground and carry out the 3rd cleaning 30, wherein, described 3rd cleanout fluid has the 5th pH value, and the absolute value of the difference of described 5th pH value and the 3rd pH value is less than or equal to 1.
Described 3rd cleans 30 for cleaning removal gate electrode film 103 surface and grinding residue of dielectric layer 101 after second grinds, it is to avoid damage is caused during follow-up grinding technics in gate electrode film 103 surface by described grinding residue.
Same, in order to prevent causing soda acid collision problem at crystal column surface to be ground, it is to avoid produce microscopic particles at crystal column surface to be ground, the absolute value of the difference of described 5th pH value and the 3rd pH value is less than or equal to 1.In one embodiment, when described 3rd pH value is 3 to 4, described 5th pH value is 3 to 4, and such as, the 5th pH value is 3.3,3.5 or 3.8.In another embodiment, when described 3rd pH value is 9 to 11, described 5th pH value is 9 to 11, and such as, described 5th pH value is 9.5,10 or 10.5.
Described second lapping liquid includes deionized water, chemical assistant and the second abrasive grains.Described 3rd cleanout fluid can be the second lapping liquid without the second abrasive grains or the second lapping liquid that without the second abrasive grains and with the addition of hydrogen peroxide or be other suitable chemical solutions.Such as, when the 5th pH value is 3 to 4, described 3rd cleanout fluid can be oxalic acid solution or citric acid solution.
In the present embodiment, while described crystal column surface to be ground is carried out the 3rd cleaning 30, second grinding pad is carried out the 3rd cleaning 30, remove the grinding residue on the second grinding pad surface, and prevent the second grinding pad surface from occurring soda acid conflict to produce too much microscopic particles, therefore, it is possible to avoid using the second grinding pad, when other wafers are ground, other wafers are caused scratch.
And owing to the time of the 3rd cleaning 30 is the shortest, the duration of the 3rd cleaning 30 is typically smaller than 5 seconds, therefore the 3rd cleaning 30 is limited to the cleansing power of the second grinding pad, for this after the second grinding pad is carried out the 3rd cleaning 30, step can also be included: spray the 4th cleanout fluid to described second grinding pad and carry out the 4th cleaning, wherein, described 4th cleanout fluid has the 7th pH value.Same, in order to avoid soda acid collision problem occurs in the second grinding pad surface, the absolute value of the difference of described 7th pH value and the 5th pH value is less than or equal to 1.
In one embodiment, when described 5th pH value is 3 to 4, described 7th pH value is 3 to 4.In another embodiment, when described 5th pH value is 9 to 11, described 7th pH value is 9 to 11.
With reference to Fig. 6, after the described 3rd cleans, described wafer to be ground is placed on the 3rd grinding pad, use the 3rd lapping liquid that described wafer to be ground is carried out the 3rd grinding, wherein, described 3rd lapping liquid has the 6th pH value, and the absolute value of the difference of described 6th pH value and the 5th pH value is less than or equal to 1.
Described 3rd is ground to cmp, and the hardness of described 3rd grinding pad is less than the hardness of the second grinding pad, and the described 3rd grinding rate ground is less than the grinding rate of the second grinding.Described 3rd grinds the pattern of crystal column surface to be ground after revising the second grinding further.
Specific in the present embodiment, described 3rd grinding technics grinds removes the dielectric layer 101 of segment thickness, work-function layer 112 and grid layer 113 so that remaining dielectric layer 101, work-function layer 112 and grid layer 113 top surface flatness are further enhanced.
Same, in the 3rd process of lapping, the 3rd lapping liquid has the microscopic particles of suspension so that dielectric layer 101 surface, work-function layer 112 surface and grid layer 113 surface have zeta equipotential layer.In order to prevent zeta equipotential layer thickening, it is to avoid the microscopic particles quantity on dielectric layer 101 surface, work-function layer 112 surface and grid layer 113 surface increases, in the present embodiment, the absolute value of the difference of the 6th pH value and the 5th pH value is less than or equal to 1.
In one embodiment, described 5th pH value is 3 to 4, and corresponding 6th pH value is 3 to 4, and the such as the 6th pH value is 3.2,3.5 or 3.8.In another embodiment, when described 5th pH value is 9 to 11, corresponding 6th pH value is 9 to 11, and the such as the 6th pH value is 9.5,10 or 10.5.
In the present embodiment, the pH value of described first lapping liquid, the second lapping liquid and the 3rd lapping liquid is identical, and the i.e. first pH value, the 3rd pH value and the 6th pH value are identical.
With reference to Fig. 7, after carrying out the described 3rd and grinding, described wafer to be ground and the 3rd grinding pad is made to separate, the 5th cleanout fluid is sprayed to described crystal column surface to be ground, described wafer to be ground is carried out the 5th cleaning 50, wherein, described 5th cleanout fluid has the 8th pH value, and the absolute value of the difference of described 8th pH value and the 6th pH value is less than or equal to 1.
Described 5th cleans 50 removal the 3rd grindings remains in the grinding residue of crystal column surface to be ground, specific in the present embodiment, removes dielectric layer 101 surface, work-function layer 112 surface and the grinding residue on grid layer 113 surface.In the present embodiment, in order to prevent on dielectric layer 101 surface, work-function layer 112 surface and grid layer 113 surface soda acid conflict occurs, the absolute value of the difference of the 8th pH value and the 6th pH value is less than or equal to 1.
In one embodiment, when described 6th pH value is 3 to 4, the 8th pH value is 3 to 4.In another embodiment, when described 6th pH value is 9 to 11, described 8th pH value is 9 to 11.
The present embodiment is being treated while grinding crystal wafer carries out the 5th cleaning 50, the 3rd grinding pad is being carried out the 5th cleaning, removes the grinding residue on the 5th grinding pad surface, and avoid, on the 5th grinding pad surface, soda acid conflict occurs.
The duration of described 5th cleaning 50 is shorter, typically smaller than 5 seconds, therefore to thoroughly remove the grinding residue on the 3rd grinding pad surface, after carrying out the 5th cleaning 50, step can also be included: to the 3rd grinding pad surface sprinkling the 6th cleanout fluid, described 3rd grinding pad carrying out the 6th cleaning, described 6th cleanout fluid has the 9th pH value, in like manner, the absolute value of the difference of described 9th pH value and the 8th pH value is less than or equal to 1.
After carrying out the 3rd grinding, complete to treat the grinding of grinding crystal wafer, specific in the present embodiment, first grinds the gate electrode film 103 (with reference to Fig. 1) removing segment thickness, second grinds removal work function film 102 (with reference to Fig. 2) and remaining gate electrode film 103 higher than dielectric layer 101 surface, and the 3rd grinds raising dielectric layer 101 surface, work-function layer 112 surface and the flatness on grid layer 113 surface further.
After the grinding completing to treat grinding crystal wafer, described wafer to be ground is placed on the output area of grinder station.Owing to wafer to be ground was being moved before output area, the pH value of crystal column surface to be ground is the 8th pH value, for this, wafer to be moved was being moved before output area by the present embodiment, use cleanout fluid after grinding that with the absolute value of the difference of the 8th pH value, the pH value of the cleanout fluid of cleaning treatment after the output area of described grinder station is ground rear cleaning treatment, and described grinding is less than or equal to 1.
With reference to Fig. 8, after the grinding completing to treat grinding crystal wafer, spray to described wafer to be ground and scrub liquid, use abrasive brush that described crystal column surface to be ground is scrubbed 60.
Use abrasive brush, remove dielectric layer 101 surface, work-function layer 112 surface and the residue on grid layer 113 surface further.
In like manner, in order to prevent treating during grinding crystal wafer surface carries out scrubbing 60, described crystal column surface to be ground produces substantial amounts of microscopic particles, avoid microscopic particles during scrubbing 60 that dielectric layer 101, work-function layer 112 and grid 113 are caused scratch, described in scrub the absolute value of the pH value of liquid and the difference of the 8th pH value less than or equal to 1.
After described wafer to be ground is scrubbed, use deionized water to treat grinding crystal wafer and be carried out processing.
It should be noted that the wafer to be ground before after carrying out the first grinding, the second grinding and the 3rd grinding, wafer to be ground and first grinds, the second grinding and the 3rd is ground is different.After first grinds, wafer to be ground includes: substrate 100 and be positioned at the dielectric layer 101 on substrate 100 surface；It is positioned at the groove of dielectric layer 101；It is positioned at the work function film 102 (with reference to Fig. 2) of dielectric layer 101 surface, channel bottom and sidewall surfaces；It is positioned at work function film 102 surface and fills the gate electrode film 103 (with reference to Fig. 2) of full groove, and described gate electrode film 103 top is higher than dielectric layer 101 surface, and gate electrode film 103 Top flatness is higher than the first grinding normal-gate film 103 Top flatness.
After second grinds, wafer to be ground includes: substrate 100 and be positioned at the dielectric layer 101 on substrate 100 surface；It is positioned at the groove of dielectric layer 101；It is positioned at the work-function layer 112 of channel bottom and sidewall surfaces；It is positioned at work-function layer 113 surface and fills the grid layer 113 of full groove.
After 3rd grinds, wafer to be ground includes: substrate 100 and be positioned at the dielectric layer 101 on substrate 100 surface；It is positioned at the groove of dielectric layer 101；It is positioned at the work-function layer 112 of channel bottom and sidewall surfaces；It is positioned at work-function layer 113 surface and fills the grid layer 113 of full groove, and compared with before the 3rd grinding, after the 3rd grinding, the thickness of dielectric layer 101 diminishes.
Due in the present embodiment, described wafer to be ground is in the first grinding technics, the first cleaning and the second grinding technics, all there is not soda acid conflict in crystal column surface to be ground, thus prevent crystal column surface to be ground to produce substantial amounts of microscopic particles, it is to avoid cause scratch owing to the existence of microscopic particles causes treating grinding crystal wafer surface in the second process of lapping.
Further, the first grinding pad, the second grinding pad and the 3rd grinding pad surface do not produce soda acid conflict all the time, it is to avoid on the first grinding pad surface, the second grinding pad surface, the 3rd grinding pad surface produce substantial amounts of microscopic particles.
Simultaneously, three step grinding technics are used to treat grinding crystal wafer surface when being ground, wafer to be ground is during the first grinding technics, the first cleaning treatment, the second grinding technics, the 3rd cleaning treatment and the 3rd grinding technics, all there is not soda acid conflict in crystal column surface to be ground, thus prevent crystal column surface to be ground from producing substantial amounts of microscopic particles, it is to avoid the second grinding technics and the 3rd grinding technics treat grinding crystal wafer surface and causes scratch.
Again, after the grinding completing to treat grinding crystal wafer, treat during grinding crystal wafer surface scrubs, there is not soda acid conflict in crystal column surface to be ground yet, thus during scrubbing, treat grinding crystal wafer surface further cause scratch, improve dielectric layer 101, work-function layer 112 and the interface performance on grid layer 113 surface further.
Finally, due to the material of grid layer 113 is aluminum in the present embodiment, if grid layer 113 surface produces soda acid conflict, also the material of grid layer 113 can be caused corrosion.And in the present embodiment, avoid grid layer 113 surface that soda acid conflict occurs all the time, it is further enhanced for this grid layer 113 surface property formed after milling.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (19)
1. a chemical and mechanical grinding method, it is characterised in that including:
Wafer to be ground is provided；
Being placed on the first grinding pad by described wafer to be ground, use the first lapping liquid that described grinding crystal wafer carries out the first grinding, wherein, described first lapping liquid has the first pH value；
After described first grinds, make wafer to be ground and the first grinding pad separate, spray the first cleanout fluid to described crystal column surface to be ground and carry out the first cleaning, wherein, described first cleanout fluid has the second pH value, and the absolute value of the difference of described second pH value and the first pH value is less than or equal to 1；
After described first cleans, described wafer to be ground is placed on the second grinding pad, uses the second lapping liquid described wafer to be ground to be carried out the second grinding, wherein, described second lapping liquid has the 3rd pH value, and the absolute value of the difference of described 3rd pH value and the second pH value is less than or equal to 1.
Chemical and mechanical grinding method the most according to claim 1, it is characterized in that, grinder station is provided, uses the absolute value of the pH value of cleanout fluid before cleanout fluid is ground front cleaning, and described grinding to the input area of described board to be ground before grinding and the difference of the first pH value less than or equal to 1；Before being placed on the first grinding pad by described crystal column surface to be ground, described wafer to be ground is placed on the input area of grinder station.
Chemical and mechanical grinding method the most according to claim 1, it is characterised in that described first is ground to cmp；Described second is ground to cmp；And described first grind grinding rate more than described second grind grinding rate；The hardness of described first grinding pad is more than the hardness of described second grinding pad.
Chemical and mechanical grinding method the most according to claim 1, it is characterised in that described first pH value is 3 to 4；Described second pH value is 3 to 4；Described 3rd pH value is 3 to 4.
Chemical and mechanical grinding method the most according to claim 4, it is characterised in that described first cleanout fluid is the first lapping liquid without abrasive grains；Or, described first cleanout fluid is the first lapping liquid without abrasive grains that with the addition of hydrogen peroxide.
Chemical and mechanical grinding method the most according to claim 4, it is characterised in that described first cleanout fluid is ethanedioic acid solution or oxalic acid solution.
Chemical and mechanical grinding method the most according to claim 1, it is characterised in that described first pH value is 9 to 11；Described second pH value is 9 to 11；Described 3rd pH value is 9 to 11.
Chemical and mechanical grinding method the most according to claim 1, it is characterised in that while described crystal column surface to be ground is carried out the first cleaning, carries out the first cleaning to described first grinding pad surface.
Chemical and mechanical grinding method the most according to claim 8, it is characterised in that the described first duration cleaned was less than or equal to 5 seconds.
Chemical and mechanical grinding method the most according to claim 9, it is characterized in that, after described first grinding pad is carried out the first cleaning, further comprise the steps of: and spray the second cleanout fluid to described first grinding pad and carry out the second cleaning, wherein, described second cleanout fluid has the 4th pH value, and the absolute value of the difference of described 4th pH value and the second pH value is less than or equal to 1.
11. chemical and mechanical grinding methods according to claim 1, it is characterized in that, further comprise the steps of: after described second grinds, described wafer to be ground and the second grinding pad is made to separate, spray the 3rd cleanout fluid to described crystal column surface to be ground and carry out the 3rd cleaning, wherein, described 3rd cleanout fluid has the 5th pH value, and the absolute value of the difference of described 5th pH value and the 3rd pH value is less than or equal to 1；After the described 3rd cleans, described wafer to be ground is placed on the 3rd grinding pad, uses the 3rd lapping liquid described wafer to be ground to be carried out the 3rd grinding, wherein, described 3rd lapping liquid has the 6th pH value, and the absolute value of the difference of described 6th pH value and the 5th pH value is less than or equal to 1.
12. chemical and mechanical grinding methods according to claim 11, it is characterised in that described first pH value, the 3rd pH value and the 6th pH value are identical.
13. chemical and mechanical grinding methods according to claim 11, it is characterised in that while described crystal column surface to be ground is carried out the 3rd cleaning, described second grinding pad is carried out the 3rd cleaning.
14. chemical and mechanical grinding methods according to claim 13, it is characterized in that, after described second grinding pad is carried out the 3rd cleaning, further comprise the steps of: and carry out the 4th cleaning to described second grinding pad sprinkling the 4th cleanout fluid, wherein, described 4th cleanout fluid has the 7th pH value, and the absolute value of the difference of described 7th pH value and the 5th pH value is less than or equal to 1.
15. chemical and mechanical grinding methods according to claim 11, it is characterized in that, after carrying out the described 3rd and grinding, described wafer to be ground and the 3rd grinding pad is made to separate, spray the 5th cleanout fluid to described crystal column surface to be ground, described wafer to be ground and the 3rd grinding pad are carried out the 5th cleaning, wherein, described 5th cleanout fluid has the 8th pH value, and the absolute value of the difference of described 8th pH value and the 6th pH value is less than or equal to 1.
16. chemical and mechanical grinding methods according to claim 15, it is characterized in that, grinder station is provided, uses the absolute value of the pH value of cleanout fluid after cleanout fluid is ground post processing, and described grinding to the output area of described grinder station after grinding and the difference of the 8th pH value less than or equal to 1；After carrying out the described 5th and cleaning, described wafer to be ground is placed on the output area of grinder station.
17. chemical and mechanical grinding methods according to claim 16, it is characterized in that, further comprise the steps of: employing to scrub liquid described crystal column surface to be ground is scrubbed, and described in scrub the pH value of liquid and grind after the absolute value of difference of pH value of cleanout fluid less than or equal to 1.
18. chemical and mechanical grinding methods according to claim 11, it is characterised in that described wafer to be ground includes: substrate and be positioned at the dielectric layer of substrate surface, are formed with groove in described dielectric layer；Fill full described groove and be covered in the gate electrode film of dielectric layer surface, and described gate electrode film top is higher than dielectric layer surface.
19. chemical and mechanical grinding methods according to claim 18, it is characterised in that described first grinds the gate electrode film removing segment thickness；Described second grinds the removal gate electrode film higher than dielectric layer surface, forms the grid layer being positioned at described groove；Described 3rd grinds dielectric layer and the grid layer removing segment thickness.
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