CN105810817A - Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure - Google Patents
Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure Download PDFInfo
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 36
- 229910052961 molybdenite Inorganic materials 0.000 title claims abstract description 34
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 41
- 241000446313 Lamella Species 0.000 claims description 34
- 239000010936 titanium Substances 0.000 claims description 25
- 238000013517 stratification Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
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- 238000005516 engineering process Methods 0.000 description 4
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
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- 240000007594 Oryza sativa Species 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
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- 239000002120 nanofilm Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
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- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
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Abstract
Disclosed is a resistive device of a two-dimensional nanosheet-layer MoS2 vertical structure. The resistive device is characterized in that the vertical structure is composed of an oxidized wafer, a Ti adhesion layer 2-5 nm in thickness, a lower electrode 50-200 nm in thickness, a resistive layer, an upper electrode 50-200 nm in thickness and an upper electrode SiO2 protecting layer 5-10 nm in thickness, wherein the resistive layer is two-dimensional nanosheet-layer MoS2 of a 'sandwich' laminated structure, and the two-dimensional nanosheet-layer MoS2 is 0.65-10 nm in thickness. The resistive device has the advantages that the two-dimensional nanosheet-layer MoS2 acts as the resistive layer of the resistive device, so that a dielectric layer material system in a resistive random access memory is expanded and application blank of the two-dimensional nanosheet-layer MoS2 in the resistive random access memory is filled; the resistive device of the pure vertical laminated structure is simple to manufacture, low in cost and easy to integrate.
Description
Technical field
The present invention relates to inorganic advanced nano film material and microelectronics technology, be specifically related to a kind of two wieners
Rice lamella MoS2Vertical stratification resistive device.
Technical background
Along with the arrival of semi-conductor industry 22nm technology node, traditional, nonvolatile memories based on silicon materials
Memory density become closer to its intrinsic limit.Resistance-variable storing device (RRAM) has height as one
The novel nonvolatile memory of density storage potentiality has developed very rapid since late 1990s, tool
Have simple in construction, size can contractility speed good, erasable is fast, repeat erasable number of times height, data hold time length,
The many merits such as multilevel storage and three-dimensional storage potentiality, receive the extensive concern of research worker, have very in recent years
The design of many new structures and the proposition of new material, be the strong competitor of non-volatility memorizer of future generation.
Electric resistance changing refers to that the resistance of material exists two or more Resistance states under voltage (electric field) acts on,
And the change of this resistance not time to time change.Generally device is converted to this of low resistance state from high-impedance state
Process is referred to as set process, otherwise, the process that device is converted to high-impedance state from low resistance state calls reset process.
The initial stage that the R&D work of resistance-variable storing device is verified also in material development and device, many problems are also
Needing to solve, wherein dielectric material has for the performance of resistance-variable storing device the most directly affects.
Simultaneously, two-dimensional nano lamella molybdenum bisuphide causes as a kind of important two-dimensional layer nano material
The concern of numerous scientific research personnel, two-dimensional nano lamella molybdenum bisuphide has " sandwich " layer structure, middle
One layer is molybdenum atom, and upper and lower two-layer is sulphur atom, and molybdenum atom is formed class " sandwich " folded by two-layer sulphur atom
Structure, molybdenum atom is combined formation two-dimensional atomic crystal with sulphur atom with covalent bond.Two-dimensional nano lamella molybdenum bisuphide
There is regulatable band gap, have vast potential for future development at field of photoelectric devices.
2011, Radisavljevic et al. was at Integrated circuits and logic operations based on
single-layer MoS2In be prepared for two-dimensional semiconductor MoS first2Integrated circuit, this integrated circuit can be used as
Phase inverter.2013, Zhang et al. was at article Graphene-Like Molybdenum Disulfide and Its
By molybdenum disulfide powder is placed in polyvinylpyrrolidone in Application in Optoelectronic Devices
In ketone (PVP) and the mixed solution of ethanol ultrasonic, obtain MoS2The nano-complex of-PVP is also successfully prepared
Flash-type memory part.
According to above-mentioned technical background, two-dimensional nano lamella MoS2Application in terms of resistance-variable storing device does not also have,
The present invention is prepared for a kind of two-dimensional nano lamella MoS2Vertical stratification resistive device, has filled up the blank of this respect.
Summary of the invention
It is an object of the invention to for two dimension MoS at present2The blank existed in terms of resistance-variable storing device, it is provided that
A kind of two-dimensional nano lamella MoS2Vertical stratification resistive device, by using two-dimensional nano lamella to deposit as resistive
The change resistance layer of reservoir, by two-dimensional nano lamella MoS2It is applied to resistance-variable storing device.
Technical scheme:
A kind of two-dimensional nano lamella MoS2Vertical stratification resistive device, by oxidized silicon chip substrate, Ti adhesion layer,
Bottom electrode, change resistance layer, upper electrode and upper electrode SiO2Protective layer composition vertical stratification, wherein change resistance layer is tool
There is the two-dimensional nano lamella MoS of " sandwich " layer structure2, each layer thickness is respectively as follows: Ti adhesion layer
2-5nm, bottom electrode 50-200nm, two-dimensional nano lamella MoS20.65-10nm, upper electrode 50-200nm,
Upper electrode SiO2Protective layer 5-10nm.
Described upper and lower electrode material is conducting metal, metal alloy, conductive metallic compound and carbon electrode/silicon electricity
Pole, wherein conducting metal is Ta, Cu, Ag, W, Ni, AL or Pt；Metal alloy is Pt/Ti, Ti/Ta,
Cu/Ti, Cu/Au, Cu/AL or AL/Zr；Conductive metallic compound is TaN, TiN, ITO, FTO, AZO
Or GZO；Carbon electrode/silicon electrode includes in Graphene, CNT, p-Si or n-Si.
A kind of described two-dimensional nano lamella MoS2The preparation method of vertical stratification resistive device, with titanium dioxide silicon chip
As substrate, the method first with ion beam sputtering prepares Ti adhesion layer, then on silicon dioxide insulating layer
Ti adhesion layer is prepared MoS2Vertical stratification resistive device, step is as follows:
1) utilizing the method for ion beam sputtering to prepare Ti adhesion layer in silicon dioxide substrates, sputtering condition is:
With metallic target as target, base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C, operating pressure 0.1-2Pa,
Discharge voltage 50-100V, heater current 0.1-0.5A, accelerating potential 100V, line 4-6A；
2) electricity under being prepared by magnetron sputtering method, ion beam sputtering or electron-beam vapor deposition method on Ti adhesion layer
Pole, magnetron sputtering condition is: with metallic target as target, and base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C,
Operating pressure 0.1-2Pa, sputtering power 40-250W；Ion beam sputtering condition is: with metallic target as target,
Base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C, operating pressure 0.1-2Pa, discharge voltage 50-100V,
Heater current 0.1-0.5A, accelerating potential 100V, line 4A-6A；Electron beam evaporation process condition is: this
End vacuum is less than 10-4Pa, the metal using fusing point relatively low is evaporation source, and mode of heating is crucible heating or electronics
Shu Jiare；
3) mechanical stripping method, chemical vapour deposition technique, liquid phase stripping method, high temperature vulcanized is used on the bottom electrode
Method, hydro-thermal method or atomic layer deposition method growth two-dimensional nano lamella molybdenum bisuphide, wherein, chemical gaseous phase deposition bar
Part is: pressure be normal pressure, temperature 500-750 DEG C, growth time be 5-15min, the rate of heat addition be 10-20 DEG C
/min；
4) on oxidized silicon chip, electrode in the process deposits of magnetron sputtering or electron beam evaporation is used, by preparation
Upper electrode is by Cu line and two-dimensional nano lamella MoS2Being connected, on magnetron sputtering, the process conditions of electrode are:
With metallic target as target, base vacuum is less than 10-4Pa, underlayer temperature are 18-500 DEG C, operating pressure is 0.1-2Pa,
Sputtering power is 40-250W；Electron beam evaporation process condition is: base vacuum is less than 10-4Pa, uses eutectic
Point metal is evaporation source, and mode of heating is the heating of dry pot or electron beam heating；
5) method one layer of SiO of growth of PECVD is utilized at upper electrode2As protective layer, technological parameter is:
Base vacuum is less than 10-5Pa, operating pressure are 0.1-5Pa, radio-frequency power is 50-300W, reacting gas is
SiH4And N2O, SiH4Flow is 50-600sccm, N2O flow is 20-50sccm.
The technical Analysis of the present invention:
The invention provides a kind of two-dimensional nano lamella MoS2Vertical stratification resistive device, change resistance layer have employed two
Dimension nanoscale twins MoS2As change resistance layer, when power on extremely Ag, Cu or Ni isoreactivity electrode time, in two dimension
Nanoscale twins MoS2The middle metallic conduction filament forming connection upper/lower electrode, under DC Electric Field, metal
The formation of conductive filament and rupture and result in different resistance states, additionally electrode and two-dimensional nano lamella MoS2
Between formed Schottky barrier, under DC Electric Field, the change of schottky barrier height result also in device
Different resistance states.
Advantages of the present invention and providing the benefit that:
1) this resistive device uses two-dimensional nano lamella MoS2As the change resistance layer of resistance-variable storing device, extend
Dielectric layer material system in resistance-variable storing device, has filled up two-dimensional nano lamella MoS2Should in resistance-variable storing device
Blank；
2) this resistive device is simple vertical stack structure, makes simple, with low cost and is easily integrated.
Accompanying drawing explanation
Fig. 1 is this two-dimensional nano lamella MoS2Vertical stratification resistance variation memory structure schematic diagram.
In figure: 1. oxidized silicon chip substrate 2.Ti adhesion layer 3. bottom electrode 4. two-dimensional nano lamella MoS2
5. go up electrode SiO on electrode 6.2Protective layer
Fig. 2 is this two-dimensional nano lamella MoS2The current-voltage characteristic curve of vertical stratification resistance-variable storing device,
Under forward voltage effect, there is set process in this resistive device, device resistance state becomes low-resistance from high resistant, at negative sense
Under voltage, there is reset process in this device, and device resistance state becomes high resistant from low-resistance, and above change illustrates, should
Two-dimensional nano lamella MoS2Vertical stratification resistive memory possesses ambipolar resistance transformation characteristic.
Detailed description of the invention
Embodiment 1:
A kind of two-dimensional nano lamella MoS2Vertical stratification resistance-variable storing device, as it is shown in figure 1, served as a contrast by oxidized silicon chip
The end, Ti adhesion layer thick for 5nm, TiN thick for 100nm are as bottom electrode, the two-dimensional nano lamella of 0.65nm
MoS2The Cu thick with 100nm is constituted as upper electrode.
The preparation method of this vertical stratification resistance-variable storing device, first with silicon chip as substrate, the method utilizing thermal oxide
Preparing layer of silicon dioxide insulating barrier on silicon chip, the method for recycling ion beam sputtering is at silicon dioxide insulating layer
Upper preparation Ti adhesion layer, then prepares this vertical structure device on Ti adhesion layer, and step is as follows:
1) utilizing the method for ion beam sputtering to prepare Ti adhesion layer in silicon dioxide substrates, sputtering condition is:
With metallic target as target, base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C, operating pressure 0.1-2Pa,
Discharge voltage 50-100V, heater current 0.1-0.5A, accelerating potential 100V, line 4-6A；(parameter takes fixed
Value)
2) use reaction magnetocontrol sputtering to prepare the thick TiN hearth electrode of 100nm on Ti adhesion layer, sputter work
Skill is: diameterMetal Ti target sputtering target material, sputtering mode is direct current (DC) magnetron sputtering, this
End vacuum is less than 5 × 10-4Pa, underlayer temperature be room temperature, operating pressure 0.5Pa, sputtering power be 100w,
Reacting gas N2, Ar flow be respectively 2.5,30Sccm；
3) method utilizing chemical gaseous phase to deposit grows nanoscale twins MoS on TiN2, technological parameter is: first
First the mixed solution of substrate silicon chip sulphuric acid and hydrogen peroxide is processed, wherein H2SO4: H2O2=3:1,
In acetone soln and aqueous isopropanol ultrasonic 10 minutes the most successively, place the MoO of 240mg3At high temperature
District, and substrate silicon chip is placed on above it, the S powder of 240mg is placed on the low-temperature space of overdraught.
In preparation process, it is passed through noble gas, keeps normal pressure, the temperature of tube furnace is raised to 700 from 100 degrees Celsius
Degree Celsius, the rate of heat addition is 15 DEG C/min, temperature is controlled at 700 DEG C in growth course, and growth time is
10 minutes, after having grown, cool the temperature to room temperature.
4) utilize on oxidized silicon chip electron beam evaporation method growth 100nm Cu as on electrode, electricity
Sub-beam evaporation condition is: base vacuum is less than 5 × 10-4Pa, using Cu metal is evaporation source, and mode of heating is
Electron beam heats.
5) method one layer of SiO of growth of PECVD is utilized at upper electrode2As protective layer, technological parameter is:
Base vacuum 5 × 10-4Pa, operating pressure are 3Pa, radio-frequency power is 150W, reacting gas is SiH4With
N2O, SiH4Flow is 50sccm, N2O flow is 20sccm.
Electrical testing is tested by Semiconductor Parameter Analyzer, and Fig. 2 is the current-voltage characteristic of this resistance-variable storing device
Curve, shows in figure: the electrology characteristic of this device is typical bipolar nature.
Embodiment 2:
A kind of two-dimensional nano lamella MoS2Vertical stratification resistive device, structure is substantially the same manner as Example 1, no
Same is with Pt as bottom electrode, and Cu is upper electrode, and thickness is 100nm.
The preparation method of this resistance-variable storing device, the preparation technology of step and Cu electrode is same as in Example 1.
Bottom electrode Pt deposits the Pt bottom electrode of 100nm by the method for electron beam evaporation on Ti adhesion layer,
Concrete technology condition is: base vacuum 5 × 10-5Pa, with Pt metal as evaporation source, mode of heating is electron beam
Heating.
Electrical testing is tested by Semiconductor Parameter Analyzer, and this device shows typical bipolar nature, turns
Time variant voltage is less than 2V.
Claims (3)
1. a two-dimensional nano lamella MoS2Vertical stratification resistive device, it is characterised in that: served as a contrast by oxidized silicon chip
The end, Ti adhesion layer, bottom electrode, change resistance layer, upper electrode and upper electrode SiO2Protective layer composition vertical stratification,
Wherein change resistance layer is the two-dimensional nano lamella MoS with " sandwich " layer structure2, each layer thickness is respectively
For: Ti adhesion layer 2-5nm, bottom electrode 50-200nm, two-dimensional nano lamella MoS20.65-10nm, power on
Pole 50-200nm, upper electrode SiO2Protective layer 5-10nm.
Two-dimensional nano lamella MoS the most according to claim 12Vertical stratification resistive device, it is characterised in that:
Described upper and lower electrode material is conducting metal, metal alloy, conductive metallic compound and carbon electrode/silicon electrode,
Wherein conducting metal is Ta, Cu, Ag, W, Ni, AL or Pt；Metal alloy is Pt/Ti, Ti/Ta, Cu/Ti,
Cu/Au, Cu/AL or AL/Zr；Conductive metallic compound be TaN, TiN, ITO, FTO, AZO or
GZO；Carbon electrode/silicon electrode includes Graphene, CNT, p-Si or n-Si.
3. a two-dimensional nano lamella MoS as claimed in claim 12The preparation method of vertical stratification resistive device,
It is characterized in that using titanium dioxide silicon chip as substrate, first with the method for ion beam sputtering at silicon dioxide insulating layer
Upper preparation Ti adhesion layer, then prepares MoS on Ti adhesion layer2Vertical stratification resistive device, step is as follows:
1) utilizing the method for ion beam sputtering to prepare Ti adhesion layer in silicon dioxide substrates, sputtering condition is:
With metallic target as target, base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C, operating pressure 0.1-2Pa,
Discharge voltage 50-100V, heater current 0.1-0.5A, accelerating potential 100V, line 4-6A；
2) electricity under being prepared by magnetron sputtering method, ion beam sputtering or electron-beam vapor deposition method on Ti adhesion layer
Pole, magnetron sputtering condition is: with metallic target as target, and base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C,
Operating pressure 0.1-2Pa, sputtering power 40-250W；Ion beam sputtering condition is: with metallic target as target,
Base vacuum is less than 10-4Pa, underlayer temperature 18-500 DEG C, operating pressure 0.1-2Pa, discharge voltage 50-100V,
Heater current 0.1-0.5A, accelerating potential 100V, line 4A-6A；Electron beam evaporation process condition is: this
End vacuum is less than 10-4Pa, the metal using fusing point relatively low is evaporation source, and mode of heating is crucible heating or electronics
Shu Jiare；
3) mechanical stripping method, chemical vapour deposition technique, liquid phase stripping method, high temperature vulcanized is used on the bottom electrode
Method, hydro-thermal method or atomic layer deposition method growth two-dimensional nano lamella molybdenum bisuphide, wherein, chemical gaseous phase deposition bar
Part is: pressure be normal pressure, temperature 500-750 DEG C, growth time be 5-15min, the rate of heat addition be 10-20 DEG C
/min；
4) on oxidized silicon chip, electrode in the process deposits of magnetron sputtering or electron beam evaporation is used, by preparation
Upper electrode is by Cu line and two-dimensional nano lamella MoS2Being connected, on magnetron sputtering, the process conditions of electrode are:
With metallic target as target, base vacuum is less than 10-4Pa, underlayer temperature are 18-500 DEG C, operating pressure is 0.1-2Pa,
Sputtering power is 40-250W；Electron beam evaporation process condition is: base vacuum is less than 10-4Pa, uses eutectic
Point metal is evaporation source, and mode of heating is the heating of dry pot or electron beam heating；
5) method one layer of SiO of growth of PECVD is utilized at upper electrode2As protective layer, technological parameter is:
Base vacuum is less than 10-5Pa, operating pressure are 0.1-5Pa, radio-frequency power is 50-300W, reacting gas is
SiH4And N2O, SiH4Flow is 50-600sccm, N2O flow is 20-50sccm.
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| CN201610374450.6A Pending CN105810817A (en) | 2016-05-31 | 2016-05-31 | Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure |
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| CN109461813A (en) * | 2018-10-09 | 2019-03-12 | 河北大学 | A kind of resistance-variable storing device and preparation method thereof based on tungsten sulfide nanometer sheet |
| CN110071215A (en) * | 2018-04-03 | 2019-07-30 | 东北师范大学 | A kind of bipolarity/nonpolarity reversible mutual transition resistance-variable storing device and preparation method thereof |
| CN110364622A (en) * | 2019-07-05 | 2019-10-22 | 国家纳米科学中心 | Based on stratiform α-MoO3Sandwich of nanometer sheet and preparation method thereof |
| CN110379922A (en) * | 2019-08-20 | 2019-10-25 | 西安工业大学 | A kind of flexibility Ag/MoS2The preparation method of/Cu resistive formula memory |
| CN110491991A (en) * | 2019-08-20 | 2019-11-22 | 西安工业大学 | It is a kind of to prepare hydro-thermal method MoS2The method of multistage resistance-variable storing device |
| CN111883655A (en) * | 2020-06-10 | 2020-11-03 | 广东工业大学 | In2S3Thin-film memristor and application thereof |
| CN111933794A (en) * | 2020-07-02 | 2020-11-13 | 北京航空航天大学 | MoS based on coexistence of analog type and digital type2Base memristor and preparation method thereof |
| CN113328036A (en) * | 2021-05-21 | 2021-08-31 | 西安工业大学 | Ag/[ SnS2/PMMA]/Cu low-power-consumption resistive random access memory and preparation method thereof |
| CN114931864A (en) * | 2021-05-08 | 2022-08-23 | 淮阴师范学院 | Two-dimensional material composite separation membrane, preparation method and application |
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| CN107634139A (en) * | 2017-08-30 | 2018-01-26 | 西安理工大学 | A kind of preparation method for resisting big voltage oxide silicon resistance changing film |
| CN110071215A (en) * | 2018-04-03 | 2019-07-30 | 东北师范大学 | A kind of bipolarity/nonpolarity reversible mutual transition resistance-variable storing device and preparation method thereof |
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| CN109461813A (en) * | 2018-10-09 | 2019-03-12 | 河北大学 | A kind of resistance-variable storing device and preparation method thereof based on tungsten sulfide nanometer sheet |
| CN109461813B (en) * | 2018-10-09 | 2022-08-19 | 河北大学 | Resistive random access memory based on tungsten sulfide nanosheet and preparation method thereof |
| CN110364622A (en) * | 2019-07-05 | 2019-10-22 | 国家纳米科学中心 | Based on stratiform α-MoO3Sandwich of nanometer sheet and preparation method thereof |
| CN110491991B (en) * | 2019-08-20 | 2022-11-08 | 西安工业大学 | Preparation of MoS by hydrothermal method 2 Method for multi-level resistive random access memory |
| CN110379922A (en) * | 2019-08-20 | 2019-10-25 | 西安工业大学 | A kind of flexibility Ag/MoS2The preparation method of/Cu resistive formula memory |
| CN110491991A (en) * | 2019-08-20 | 2019-11-22 | 西安工业大学 | It is a kind of to prepare hydro-thermal method MoS2The method of multistage resistance-variable storing device |
| CN110379922B (en) * | 2019-08-20 | 2023-01-31 | 西安工业大学 | Flexible Ag/MoS 2 Preparation method of/Cu resistive random access memory |
| CN111883655A (en) * | 2020-06-10 | 2020-11-03 | 广东工业大学 | In2S3Thin-film memristor and application thereof |
| CN111933794A (en) * | 2020-07-02 | 2020-11-13 | 北京航空航天大学 | MoS based on coexistence of analog type and digital type2Base memristor and preparation method thereof |
| CN111933794B (en) * | 2020-07-02 | 2023-08-01 | 北京航空航天大学 | MoS based on coexistence of analog type and digital type 2 Base memristor and preparation method thereof |
| CN114931864A (en) * | 2021-05-08 | 2022-08-23 | 淮阴师范学院 | Two-dimensional material composite separation membrane, preparation method and application |
| CN114931864B (en) * | 2021-05-08 | 2023-11-24 | 淮阴师范学院 | Two-dimensional material composite separation membrane, preparation method and application |
| CN113328036B (en) * | 2021-05-21 | 2022-11-08 | 西安工业大学 | Ag/[ SnS 2 /PMMA]/Cu low-power-consumption resistive random access memory and preparation method thereof |
| CN113328036A (en) * | 2021-05-21 | 2021-08-31 | 西安工业大学 | Ag/[ SnS2/PMMA]/Cu low-power-consumption resistive random access memory and preparation method thereof |
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